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Nonlinear optical conductivity of a two-band crystal I
Authors:
D. J. Passos,
G. B. Ventura,
J. M. B. Lopes dos Santos,
J. M. Viana Parente Lopes
Abstract:
The structure of the electronic nonlinear optical conductivity is elucidated in a detailed study of the time-reversal symmetric two-band model. The nonlinear conductivity is decomposed as a sum of contributions related with different regions of the First Brillouin Zone, defined by single or multiphoton resonances. All contributions are written in terms of the same integrals, which contain all info…
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The structure of the electronic nonlinear optical conductivity is elucidated in a detailed study of the time-reversal symmetric two-band model. The nonlinear conductivity is decomposed as a sum of contributions related with different regions of the First Brillouin Zone, defined by single or multiphoton resonances. All contributions are written in terms of the same integrals, which contain all information specific to the particular model under study. In this way, ready-to-use formulas are provided that reduce the often tedious calculations of the second and third order optical conductivity to the evaluation of a small set of similar integrals. In the scenario where charge carriers are present prior to optical excitation, Fermi surface contributions must also be considered and are shown to have an universal frequency dependence, tunable by do**. General characteristics are made evident in this type of resonance-based analysis: the existence of step functions that determine the chemical potential dependence of electron-hole symmetric insulators; the determination of the imaginary part by Hilbert transforms, simpler than those of the nonlinear Kramers-Krönig relations; the absence of Drude peaks in the diagonal elements of the second order conductivity, among others. As examples, analytical expressions are derived for the nonlinear conductivities of some simple systems: a very basic model of direct gap semiconductors and the Dirac fermions of monolayer graphene.
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Submitted 15 February, 2021;
originally announced February 2021.
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Second order divergence in the third order DC response of a cold semiconductor
Authors:
G. B. Ventura,
D. J. Passos,
J. M. Viana Parente Lopes,
J. M. B. Lopes dos Santos
Abstract:
In this work, we present the analytical expression for the second order divergence in the third order DC response of a cold semiconductor, which can be probed by different electric field setups. Results from this expression were then compared, for the response of the gapped graphene monolayer, with numerical results from a velocity gauge calculation of the third order conductivity. The good agreem…
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In this work, we present the analytical expression for the second order divergence in the third order DC response of a cold semiconductor, which can be probed by different electric field setups. Results from this expression were then compared, for the response of the gapped graphene monolayer, with numerical results from a velocity gauge calculation of the third order conductivity. The good agreement between the two validates our analytical expression.
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Submitted 4 April, 2020;
originally announced April 2020.
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A study of the nonlinear optical response of the plain graphene and gapped graphene monolayers beyond the Dirac approximation
Authors:
G. B. Ventura,
D. J. Passos,
J. M. Viana Parente Lopes,
J. M. B. Lopes dos Santos
Abstract:
In this work, we present numerical results for the second and third order conductivities of the plain graphene and gapped graphene monolayers associated with the second and third harmonic generation, the optical rectification and the optical Kerr effect. The frequencies considered here range from the microwave to the ultraviolet portion of the spectrum, the latter end of which had not yet been stu…
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In this work, we present numerical results for the second and third order conductivities of the plain graphene and gapped graphene monolayers associated with the second and third harmonic generation, the optical rectification and the optical Kerr effect. The frequencies considered here range from the microwave to the ultraviolet portion of the spectrum, the latter end of which had not yet been studied. These calculations are performed in the velocity gauge and directly address the components of the conductivity tensor. In the velocity gauge, the radiation field is represented by a power series in the vector potential, and we discuss a very efficient way of calculating its coefficients in the context of tight-binding models.
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Submitted 4 February, 2020; v1 submitted 12 February, 2019;
originally announced February 2019.
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Nonlinear optical responses of crystalline systems: Results from a velocity gauge analysis
Authors:
D. J. Passos,
G. B. Ventura,
J. M. Viana Parente Lopes,
J. M. B. Lopes dos Santos,
N. M. R. Peres
Abstract:
In this work, the difficulties inherent to perturbative calculations in the velocity gauge are addressed. In particular, it is shown how calculations of nonlinear optical responses in the independent particle approximation can be done to any order and for any finite band model. The procedure and advantages of the velocity gauge in such calculations are described. The addition of a phenomenological…
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In this work, the difficulties inherent to perturbative calculations in the velocity gauge are addressed. In particular, it is shown how calculations of nonlinear optical responses in the independent particle approximation can be done to any order and for any finite band model. The procedure and advantages of the velocity gauge in such calculations are described. The addition of a phenomenological relaxation parameter is also discussed. As an illustration, the nonlinear optical response of monolayer graphene is numerically calculated using the velocity gauge.
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Submitted 5 March, 2018; v1 submitted 13 December, 2017;
originally announced December 2017.
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Gauge covariances and nonlinear optical responses
Authors:
G. B. Ventura,
D. J. Passos,
J. M. B. Lopes dos Santos,
J. M. Viana Parente Lopes,
N. M . R. Peres
Abstract:
The formalism of the reduced density matrix is pursued in both length and velocity gauges of the perturbation to the crystal Hamiltonian. The covariant derivative is introduced as a convenient representation of the position operator. This allow us to write compact expressions for the reduced density matrix in any order of the perturbation which simplifies the calculations of nonlinear optical resp…
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The formalism of the reduced density matrix is pursued in both length and velocity gauges of the perturbation to the crystal Hamiltonian. The covariant derivative is introduced as a convenient representation of the position operator. This allow us to write compact expressions for the reduced density matrix in any order of the perturbation which simplifies the calculations of nonlinear optical responses; as an example, we compute the first and third order contributions of the monolayer graphene. Expressions obtained in both gauges share the same formal structure, allowing a comparison of the effects of truncation to a finite set of bands. This truncation breaks the equivalence between the two approaches: its proper implementation can be done directly in the expressions derived in the length gauge, but require a revision of the equations of motion of the reduced density matrix in the velocity gauge.
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Submitted 30 June, 2017; v1 submitted 22 March, 2017;
originally announced March 2017.
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On the ferroelectric and magnetoelectric mechanisms in low Fe$^{3+}$ doped TbMnO$_3$
Authors:
R. Vilarinho,
E. Queiros,
D. J. Passos,
D. A. Mota,
P. B. Tavares,
M. Mihalik jr.,
M. Zentkova,
M. Mihalik,
A. Almeida,
J. Agostinho Moreira
Abstract:
This work addresses the effect of substituting Mn$^{3+}$ by Fe$^{3+}$ at the octahedral site of TbMnO$_3$ on the magnetic phase sequence, ferroelectric and magnetoelectric properties, kee** the Fe$^{3+}$ concentration below 5%. The temperature dependence of the specific heat, dielectric permittivity and electric polarization was studied as a function of Fe$^{3+}$ concentration and applied magnet…
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This work addresses the effect of substituting Mn$^{3+}$ by Fe$^{3+}$ at the octahedral site of TbMnO$_3$ on the magnetic phase sequence, ferroelectric and magnetoelectric properties, kee** the Fe$^{3+}$ concentration below 5%. The temperature dependence of the specific heat, dielectric permittivity and electric polarization was studied as a function of Fe$^{3+}$ concentration and applied magnetic field. From the experimental results a strong decrease of the electric polarization with increasing Fe$^{3+}$ substitution is observed, vanishing above a concentration of 4%. However, within this range, a significant increase of the magnetic sensitivity of the electric polarization is obtained by increasing Fe$^{3+}$ concentration. Above that value, a non-polar, weak ferromagnetic phase emerges, in good agreement with the predictions of the Dzyalowshinskii-Moriya model. This behavior reveals the crucial effect of Fe$^{3+}$ substitution in octahedral sites on the magnetic phase sequence, polar and magnetoelectric behavior of the TbMn$_{1-x}$Fe$_x$O$_3$ system. From the results obtained in this work, it is understood that this behavior is not associated with the eg electronic configuration, but instead to the competition between ferromagnetic and antiferromagnetic interactions, which is very sensitive to both local fields and distortions.
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Submitted 26 May, 2017; v1 submitted 4 February, 2016;
originally announced February 2016.
