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Canalization-based super-resolution imaging using a single van der Waals layer
Authors:
Jiahua Duan,
Aitana Tarazaga Martin-Luengo,
Christian Lanza,
Stefan Partel,
Kirill Voronin,
Ana Isabel F. Tresguerres-Mata,
Gonzalo Álvarez-Pérez,
Alexey Y. Nikitin,
J. Martín-Sánchez,
P. Alonso-González
Abstract:
Canalization is an optical phenomenon that enables unidirectional propagation of light in a natural way, i.e., without the need for predefined waveguiding designs. Predicted years ago, it was recently demonstrated using highly confined phonon polaritons (PhPs) in twisted layers of the van der Waals (vdW) crystal alpha-MoO3, offering unprecedented possibilities for controlling light-matter interact…
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Canalization is an optical phenomenon that enables unidirectional propagation of light in a natural way, i.e., without the need for predefined waveguiding designs. Predicted years ago, it was recently demonstrated using highly confined phonon polaritons (PhPs) in twisted layers of the van der Waals (vdW) crystal alpha-MoO3, offering unprecedented possibilities for controlling light-matter interactions at the nanoscale. However, despite this finding, applications based on polariton canalization have remained elusive so far, which can be explained by the complex sample fabrication of twisted stacks. In this work, we introduce a novel canalization phenomenon, arising in a single vdW thin layer (alpha-MoO3) when it is interfaced with a substrate exhibiting a given negative permittivity, that allows us to demonstrate a proof-of-concept application based on polariton canalization: super-resolution (up to ~λ0/220) nanoimaging. Importantly, we find that canalization-based imaging transcends conventional projection constraints, allowing the super-resolution images to be obtained at any desired location in the image plane. This versatility stems from the synergetic manipulation of three distinct parameters: incident frequency, rotation angle of the thin vdW layer, and thickness. These results provide valuable insights into the fundamental properties of canalization and constitute a seminal step towards multifaceted photonic applications, encompassing imaging, data transmission, and ultra-compact photonic integration.
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Submitted 23 April, 2024;
originally announced April 2024.
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Characterization of low loss microstrip resonators as a building block for circuit QED in a 3D waveguide
Authors:
D. Zoepfl,
P. R. Muppalla,
C. M. F. Schneider,
S. Kasemann,
S. Partel,
G. Kirchmair
Abstract:
Here we present the microwave characterization of microstrip resonators made from aluminum and niobium inside a 3D microwave waveguide. In the low temperature, low power limit internal quality factors of up to one million were reached. We found a good agreement to models predicting conductive losses and losses to two level systems for increasing temperature. The setup presented here is appealing f…
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Here we present the microwave characterization of microstrip resonators made from aluminum and niobium inside a 3D microwave waveguide. In the low temperature, low power limit internal quality factors of up to one million were reached. We found a good agreement to models predicting conductive losses and losses to two level systems for increasing temperature. The setup presented here is appealing for testing materials and structures, as it is free of wire bonds and offers a well controlled microwave environment. In combination with transmon qubits, these resonators serve as a building block for a novel circuit QED architecture inside a rectangular waveguide.
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Submitted 5 April, 2023; v1 submitted 13 June, 2017;
originally announced June 2017.
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Cryogenic silicon surface ion trap
Authors:
Michael Niedermayr,
Kirill Lakhmanskiy,
Muir Kumph,
Stefan Partel,
Johannes Edlinger,
Michael Brownnutt,
Rainer Blatt
Abstract:
Trapped ions are pre-eminent candidates for building quantum information processors and quantum simulators. They have been used to demonstrate quantum gates and algorithms, quantum error correction, and basic quantum simulations. However, to realise the full potential of such systems and make scalable trapped-ion quantum computing a reality, there exist a number of practical problems which must be…
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Trapped ions are pre-eminent candidates for building quantum information processors and quantum simulators. They have been used to demonstrate quantum gates and algorithms, quantum error correction, and basic quantum simulations. However, to realise the full potential of such systems and make scalable trapped-ion quantum computing a reality, there exist a number of practical problems which must be solved. These include tackling the observed high ion-heating rates and creating scalable trap structures which can be simply and reliably produced. Here, we report on cryogenically operated silicon ion traps which can be rapidly and easily fabricated using standard semiconductor technologies. Single $^{40}$Ca$^+$ ions have been trapped and used to characterize the trap operation. Long ion lifetimes were observed with the traps exhibiting heating rates as low as $\dot{\bar{n}}=$ 0.33 phonons/s at an ion-electrode distance of 230 $μ$m. These results open many new avenues to arrays of micro-fabricated ion traps.
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Submitted 1 May, 2015; v1 submitted 20 March, 2014;
originally announced March 2014.
