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Time Localized Tilted Beams in Nearly-Degenerate Laser Cavities
Authors:
A. Bartolo,
N. Vigne,
M. Marconi,
G. Beaudoin,
K. Pantzas,
I. Sagnes,
A. Garnache,
M. Giudici
Abstract:
We show that nearly degenerate Vertical External-Cavity Surface-Emitting Lasers emit tilted beams of time localized structures, i.e. mode-locked light pulses which can be individually addressed. These beams feature a Gaussian profile and they are emitted in pairs with opposite transverse k-vector. Because they are phase locked, their interference leads to a non homotetic pattern in the near-field…
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We show that nearly degenerate Vertical External-Cavity Surface-Emitting Lasers emit tilted beams of time localized structures, i.e. mode-locked light pulses which can be individually addressed. These beams feature a Gaussian profile and they are emitted in pairs with opposite transverse k-vector. Because they are phase locked, their interference leads to a non homotetic pattern in the near-field emission of the laser. When a single pair is emitted this is a stripe pattern. Our analysis discloses the role of spherical aberrations of the cavity in stabilizing this spatio-temporal mode-locked regime and in selecting the value of the transverse wavevector.
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Submitted 14 February, 2024; v1 submitted 22 January, 2024;
originally announced January 2024.
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Merging and disconnecting resonance tongues in a pulsing excitable microlaser with delayed optical feedback
Authors:
Soizic Terrien,
Bernd Krauskopf,
Neil G. R. Broderick,
Venkata A. Pammi,
Rémy Braive,
Isabelle Sagnes,
Grégoire Beaudoin,
Konstantinos Pantzas,
Sylvain Barbay
Abstract:
Excitability, encountered in numerous fields from biology to neurosciences and optics, is a general phenomenon characterized by an all-or-none response of a system to an external perturbation. When subject to delayed feedback, excitable systems can sustain multistable pulsing regimes, which are either regular or irregular time sequences of pulses reappearing every delay time. Here, we investigate…
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Excitability, encountered in numerous fields from biology to neurosciences and optics, is a general phenomenon characterized by an all-or-none response of a system to an external perturbation. When subject to delayed feedback, excitable systems can sustain multistable pulsing regimes, which are either regular or irregular time sequences of pulses reappearing every delay time. Here, we investigate an excitable microlaser subject to delayed optical feedback and study the emergence of complex pulsing dynamics, including periodic, quasiperiodic and irregular pulsing regimes. This work is motivated by experimental observations showing these different types of pulsing dynamics. A suitable mathematical model, written as a system of delay differential equations, is investigated through an in-depth bifurcation analysis. We demonstrate that resonance tongues play a key role in the emergence of complex dynamics, including non-equidistant periodic pulsing solutions and chaotic pulsing. The structure of resonance tongues is shown to depend very sensitively on the pump parameter. Successive saddle transitions of bounding saddle-node bifurcations constitute a merging process that results in unexpectedly large locking regions, which subsequently disconnect from the relevant torus bifurcation curve; the existence of such unconnected regions of periodic pulsing is in excellent agreement with experimental observations. As we show, the transition to unconnected resonance regions is due to a general mechanism: the interaction of resonance tongues locally at an extremum of the rotation number on a torus bifurcation curve. We present and illustrate the two generic cases of disconnecting and of disappearing resonance tongues. Moreover, we show how a maximum and a minimum of the rotation number appears naturally when two torus bifurcation curves undergo a saddle transition (where they connect differently).
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Submitted 12 September, 2022;
originally announced September 2022.
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Continuous-Wave Second-Harmonic Generation in Orientation-Patterned GaP Waveguides at Telecom Wavelengths
Authors:
Konstantinos Pantzas,
Sylvain Combrié,
Myriam Bailly,
Raphaël Mandouze,
Francesco Rinaldi Talenti,
Abdelmounaim Harouri,
Bruno Gérard,
Grégoire Beaudoin,
Luc Le Gratiet,
Gilles Patriarche,
Alfredo de Rossi,
Yoan Léger,
Isabelle Sagnes,
Arnaud Grisard
Abstract:
A new process to produce Orientation-Patterned Gallium Phosphide (OP-GaP) on GaAs with almost perfectly parallel domain boundaries is presented. Taking advantage of the chemical selectivity between phosphides and arsenides, OP-GaP is processed into suspended shallow-ridge waveguides. Efficient Second-Harmonic Generation from Telecom wavelengths is achieved in both Type-I and Type-II polarisation c…
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A new process to produce Orientation-Patterned Gallium Phosphide (OP-GaP) on GaAs with almost perfectly parallel domain boundaries is presented. Taking advantage of the chemical selectivity between phosphides and arsenides, OP-GaP is processed into suspended shallow-ridge waveguides. Efficient Second-Harmonic Generation from Telecom wavelengths is achieved in both Type-I and Type-II polarisation configurations. The highest observed conversion efficiency is \SI{200}{\percent\per\watt\per\centi\meter\squared}, with a bandwidth of \SI{2.67}{\nano\meter} in a \SI{1}{\milli\meter}-long waveguide. The variation of the conversion efficiency with wavelength closely follows a squared cardinal sine function, in excellent agreement with theory, confirming the good uniformity of the poling period over the entire length of the waveguide.
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Submitted 5 May, 2022; v1 submitted 17 March, 2022;
originally announced March 2022.
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10 Gbit/s free space data transmission at 9 $μ$m wavelength with unipolar quantum optoelectronics
Authors:
Hamza Dely,
Thomas Bonazzi,
Olivier Spitz,
Etienne Rodriguez,
Djamal Gacemi,
Yanko Todorov,
Konstantinos Pantzas,
Grégoire Beaudoin,
Isabelle Sagnes,
Lianhe Li,
Alexander Davies,
Edmund Linfield,
Frédéric Grillot,
Angela Vasanelli,
Carlo Sirtori
Abstract:
The realization of high-frequency unipolar quantum optoelectronic devices enables the demonstration of high bitrate free space data transmission in the second atmospheric window. Data-bits are written onto the laser emission using a large bandwidth amplitude modulator that operates by shifting the absorption of an optical transition in and out of the laser frequency.
The realization of high-frequency unipolar quantum optoelectronic devices enables the demonstration of high bitrate free space data transmission in the second atmospheric window. Data-bits are written onto the laser emission using a large bandwidth amplitude modulator that operates by shifting the absorption of an optical transition in and out of the laser frequency.
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Submitted 13 October, 2021;
originally announced October 2021.
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Ultra-low-noise Microwave to Optics Conversion in Gallium Phosphide
Authors:
Robert Stockill,
Moritz Forsch,
Frederick Hijazi,
Grégoire Beaudoin,
Konstantinos Pantzas,
Isabelle Sagnes,
Rémy Braive,
Simon Gröblacher
Abstract:
Mechanical resonators can act as excellent intermediaries to interface single photons in the microwave and optical domains due to their high quality factors. Nevertheless, the optical pump required to overcome the large energy difference between the frequencies can add significant noise to the transduced signal. Here we exploit the remarkable properties of thin-film gallium phosphide to demonstrat…
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Mechanical resonators can act as excellent intermediaries to interface single photons in the microwave and optical domains due to their high quality factors. Nevertheless, the optical pump required to overcome the large energy difference between the frequencies can add significant noise to the transduced signal. Here we exploit the remarkable properties of thin-film gallium phosphide to demonstrate bi-directional on-chip conversion between microwave and optical frequencies, realized by piezoelectric actuation of a Gigahertz-frequency optomechanical resonator. The large optomechanical coupling and the suppression of two-photon absorption in the material allows us to operate the device at optomechanical cooperativities greatly exceeding one. Alternatively, when using a pulsed upconversion pump, we demonstrate that we induce less than one thermal noise phonon. We include a high-impedance on-chip matching resonator to mediate the mechanical load with the 50-Ohm source. Our results establish gallium phosphide as a versatile platform for ultra-low-noise conversion of photons between microwave and optical frequencies.
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Submitted 25 November, 2022; v1 submitted 9 July, 2021;
originally announced July 2021.
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Relaxation mechanism of GaP grown on 001 Sisubstrates: influence of defects on the growth of AlGaPlayers on GaP/Si templates
Authors:
Konstantinos Pantzas,
Grégoire Beaudoin,
Myriam Bailly,
Aude Martin,
Arnaud Grisard,
Daniel Dolfi,
Olivia Mauguin,
Ludovic Largeau,
Isabelle Sagnes,
Gilles Patriarche
Abstract:
The mechanical stability of commercial GaP/Si templates during thermal an-nealing and subsequent MOCVD growth of GaP and AlGaP is investigated.Although the GaP layer of the template originally presents an excellent surfacemorphology, annealing at high enough temperatures to remove the native oxideprior to growth leads to plastic relaxation, accompanied by a variety of defects,including a dense gri…
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The mechanical stability of commercial GaP/Si templates during thermal an-nealing and subsequent MOCVD growth of GaP and AlGaP is investigated.Although the GaP layer of the template originally presents an excellent surfacemorphology, annealing at high enough temperatures to remove the native oxideprior to growth leads to plastic relaxation, accompanied by a variety of defects,including a dense grid of micro-twins. These micro-twins detrimentally affectGaP and AlGaP layers grown subsequently on the template.
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Submitted 8 January, 2021;
originally announced January 2021.
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Reduced lasing thresholds in GeSn microdisk cavities with defect management of the optically active region
Authors:
Anas Elbaz,
Riazul Arefin,
Emilie Sakat,
Binbin Wang,
Etienne Herth,
Gilles Patriarche,
Antonino Foti,
Razvigor Ossikovski,
Sebastien Sauvage,
Xavier Checoury,
Konstantinos Pantzas,
Isabelle Sagnes,
Jérémie Chrétien,
Lara Casiez,
Mathieu Bertrand,
Vincent Calvo,
Nicolas Pauc,
Alexei Chelnokov,
Philippe Boucaud,
Frederic Boeuf,
Vincent Reboud,
Jean-Michel Hartmann,
Moustafa El Kurdi
Abstract:
GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band structure directness, by increasing the Sn content in thick GeSn layers grown on germanium (Ge) virtual substrates (VS) on Si. These lasers nonetheless su…
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GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band structure directness, by increasing the Sn content in thick GeSn layers grown on germanium (Ge) virtual substrates (VS) on Si. These lasers nonetheless suffer from a lack of defect management and from high threshold densities. In this work we examine the lasing characteristics of GeSn alloys with Sn contents ranging from 7 \% to 10.5 \%. The GeSn layers were patterned into suspended microdisk cavities with different diameters in the 4-\SI{8 }{\micro\meter} range. We evidence direct band gap in GeSn with 7 \% of Sn and lasing at 2-\SI{2.3 }{\micro\meter} wavelength under optical injection with reproducible lasing thresholds around \SI{10 }{\kilo\watt\per\square\centi\meter}, lower by one order of magnitude as compared to the literature. These results were obtained after the removal of the dense array of misfit dislocations in the active region of the GeSn microdisk cavities. The results offer new perspectives for future designs of GeSn-based laser sources.
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Submitted 21 December, 2020;
originally announced December 2020.
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Experimental quantification of atomically-resolved HAADF-STEMimages using EDX
Authors:
Konstantinos Pantzas,
Gilles Patriarche
Abstract:
Atomically-resolved map**s of the indium composition in InGaN/GaN multi-quantum wellstructures have been obtained by quantifying the contrast in HAADF-STEM. The quantificationprocedure presented here does not rely on computation-intensive simulations, but rather uses EDXmeasurements to calibrate the HAADF-STEM contrast. The histogram of indium compositionsobtained from the map** provides uniqu…
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Atomically-resolved map**s of the indium composition in InGaN/GaN multi-quantum wellstructures have been obtained by quantifying the contrast in HAADF-STEM. The quantificationprocedure presented here does not rely on computation-intensive simulations, but rather uses EDXmeasurements to calibrate the HAADF-STEM contrast. The histogram of indium compositionsobtained from the map** provides unique insights into the growth of InGaN: the transitionfrom GaN to InGaN and vice versa occurs in discreet increments of composition; each incrementcorresponds to one monolayer of the interface, indicating that nucleation takes longer than thelateral growth of the step. Strain-state analysis is also performed by applying Peak-Pair Analysisto the positions of the atomic columns identified the quantification of the contrast. The strainmap**s yield an estimate of the composition in good agreement with the one obtained fromquantified HAADF-STEM, albeit with a lower precision. Possible improvements to increase theprecision of the strain map**s are discussed, opening potential pathways for the quantification ofarbitrary quaternary alloys at atomic scales.
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Submitted 6 November, 2020;
originally announced November 2020.
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Ultra-low threshold cw and pulsed lasing in tensile strained GeSn alloys
Authors:
A. Elbaz,
D. Buca,
N. Von den Driesch,
K. Pantzas,
G. Patriarche,
N. Zerounian,
E. Herth,
X. Checoury,
S. Sauvage,
I. Sagnes,
A. Foti,
R. Ossikovski,
J. -M. Hartmann,
F. Boeuf,
Z. Ikonic,
P. Boucaud,
D. Grutzmacher,
M. El Kurdi
Abstract:
GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, similar to conventional III-V semiconductors and thus can be employed for light emitting devices. Here, we report on GeSn microdisk lasers encapsulated with a SiNx stressor layer to produce tensile strain. A 300nm GeSn la…
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GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, similar to conventional III-V semiconductors and thus can be employed for light emitting devices. Here, we report on GeSn microdisk lasers encapsulated with a SiNx stressor layer to produce tensile strain. A 300nm GeSn layer with 5.4 at.% Sn, which is an indirect band-gap semiconductor as-grown with a compressive strain of -0.32 %, is transformed via tensile strain engineering into a truly direct band-gap semiconductor. In this approach the low Sn concentration enables improved defect engineering and the tensile strain delivers a low density of states at the valence band edge, which is the light hole band. Continuous wave (cw) as well as pulsed lasing are observed at very low optical pump powers. Lasers with emission wavelength of 2.5 um have thresholds as low as 0.8kWcm^-2 for ns-pulsed excitation, and 1.1kWcm^-2 under cw excitation. These thresholds are more than two orders of magnitude lower than those previously reported for bulk GeSn lasers, approaching these values obtained for III-V lasers on Si. The present results demonstrate the feasabiliy and are the guideline for monolithically integrated Si-based laser sources on Si photonics platform.
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Submitted 14 January, 2020;
originally announced January 2020.
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Gallium phosphide as a piezoelectric platform for quantum optomechanics
Authors:
Robert Stockill,
Moritz Forsch,
Grégoire Beaudoin,
Konstantinos Pantzas,
Isabelle Sagnes,
Rémy Braive,
Simon Gröblacher
Abstract:
Recent years have seen extraordinary progress in creating quantum states of mechanical oscillators, leading to great interest in potential applications for such systems in both fundamental as well as applied quantum science. One example is the use of these devices as transducers between otherwise disparate quantum systems. In this regard, a promising approach is to build integrated piezoelectric o…
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Recent years have seen extraordinary progress in creating quantum states of mechanical oscillators, leading to great interest in potential applications for such systems in both fundamental as well as applied quantum science. One example is the use of these devices as transducers between otherwise disparate quantum systems. In this regard, a promising approach is to build integrated piezoelectric optomechanical devices, that are then coupled to microwave circuits. Optical absorption, low quality factors and other challenges have up to now prevented operation in the quantum regime, however. Here, we design and characterize such a piezoelectric optomechanical device fabricated from gallium phosphide in which a 2.9~GHz mechanical mode is coupled to a high quality factor optical resonator in the telecom band. The large electronic bandgap and the resulting low optical absorption of this new material, on par with devices fabricated from silicon, allows us to demonstrate quantum behavior of the structure. This not only opens the way for realizing noise-free quantum transduction between microwaves and optics, but in principle also from various color centers with optical transitions in the near visible to the telecom band.
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Submitted 17 September, 2019;
originally announced September 2019.
