Superconducting phase diagram in Bi$_x$Ni$_{1-x}$ thin films$\colon$ the effects of Bi stoichiometry on superconductivity
Authors:
Jihun Park,
Jarryd A. Horn,
Dylan J. Kirsch,
Rohit K. Pant,
Hyeok Yoon,
Sungha Baek,
Suchismita Sarker,
Apurva Mehta,
Xiaohang Zhang,
Seunghun Lee,
Richard Greene,
Johnpierre Paglione,
Ichiro Takeuchi
Abstract:
The Bi${-}$Ni binary system has been of interest due to possible unconventional superconductivity aroused therein, such as time-reversal symmetry breaking in Bi/Ni bilayers or the coexistence of superconductivity and ferromagnetism in Bi$_3$Ni crystals. While Ni acts as a ferromagnetic element in such systems, the role of strong spin-orbit-coupling element Bi in superconductivity has remained unex…
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The Bi${-}$Ni binary system has been of interest due to possible unconventional superconductivity aroused therein, such as time-reversal symmetry breaking in Bi/Ni bilayers or the coexistence of superconductivity and ferromagnetism in Bi$_3$Ni crystals. While Ni acts as a ferromagnetic element in such systems, the role of strong spin-orbit-coupling element Bi in superconductivity has remained unexplored. In this work, we systematically studied the effects of Bi stoichiometry on the superconductivity of Bi$_x$Ni$_{1-x}$ thin films (${x} \approx$ 0.5 to 0.9) fabricated via a composition-spread approach. The superconducting phase map of Bi$_x$Ni$_{1-x}$ thin films exhibited a superconducting composition region attributable to the intermetallic Bi$_3$Ni phase with different amount of excess Bi, revealed by synchrotron X-ray diffraction analysis. Interestingly, the mixed phase region with Bi$_3$Ni and Bi showed unusual increases in the superconducting transition temperature and residual resistance ratio as more Bi impurities were included, with the maximum ${T}_{c}$ ($=$ 4.2 K) observed at $x \approx$ 0.79. A correlation analysis of structural, electrical, and magneto-transport characteristics across the composition variation revealed that the unusual superconducting $"$dome$"$ is due to two competing roles of Bi$\colon$ impurity scattering and carrier do**. We found that the carrier do** effect is dominant in the mild do** regime (0.74 $\leq {x} \leq$ 0.79), while impurity scattering becomes more pronounced at larger Bi stoichiometry.
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Submitted 26 June, 2024;
originally announced June 2024.
