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Enhanced Thermoelectric Properties By Embedding Fe Nanoparticles Into CrN Films For Energy Harvesting Applications
Authors:
Daria Pankratova,
Khabib Yusupov,
Alberto Vomiero,
Sanath Kumar Honnali,
Robert Boyd,
Sebastian Ekeroth,
Ulf Helmersson,
Clio Azina,
Arnaud le Febvrier
Abstract:
Nanostructured materials and nanocomposites have shown great promise for improving the efficiency of thermoelectric materials. Herein, Fe nanoparticles were imbedded into a CrN matrix by combining two physical vapor deposition approaches, namely high-power impulse magnetron sputtering and a nanoparticle gun. The combination of these techniques allowed the formation of nanocomposites in which the F…
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Nanostructured materials and nanocomposites have shown great promise for improving the efficiency of thermoelectric materials. Herein, Fe nanoparticles were imbedded into a CrN matrix by combining two physical vapor deposition approaches, namely high-power impulse magnetron sputtering and a nanoparticle gun. The combination of these techniques allowed the formation of nanocomposites in which the Fe nanoparticles remained intact without intermixing with the matrix. The electrical and thermal transport properties of the nanocomposites were investigated and compared to a monolithic CrN film. The measured thermoelectric properties revealed an increase in the Seebeck coefficient, with a decrease of hall carrier concentration and an increase of the electron mobility which could be explained by energy filtering by internal phases created at the NP/matrix interface. The thermal conductivity of the final nanocomposite was reduced from 4.8 W m-1K-1 to a minimum of 3.0 W m-1K-1 W. This study shows prospects for the nanocomposite synthesis process using nanoparticles and its use in improving the thermoelectric properties of coatings.
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Submitted 8 January, 2024; v1 submitted 15 April, 2023;
originally announced April 2023.
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Thermoelectric properties of Sm-doped BiCuSeO oxyselenides fabricated by two-step reactive sintering
Authors:
Andrei Novitskii,
Illia Serhiienko,
Sergey Novikov,
Kirill Kuskov,
Daria Pankratova,
Tatyana Sviridova,
Andrei Voronin,
Aleksei Bogach,
Elena Skryleva,
Yuriy Parkhomenko,
Alexander Burkov,
Takao Mori,
Vladimir Khovaylo
Abstract:
Among layered oxygen-containing compounds, BiCuSeO is one of the most promising candidates for thermoelectric applications due to its intrinsically low thermal conductivity and good thermal stability. However, the rather poor electrical conductivity of pristine BiCuSeO hinders its potential. Further enhancement of the thermoelectric performance by single do** at Bi site is limited mainly due to…
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Among layered oxygen-containing compounds, BiCuSeO is one of the most promising candidates for thermoelectric applications due to its intrinsically low thermal conductivity and good thermal stability. However, the rather poor electrical conductivity of pristine BiCuSeO hinders its potential. Further enhancement of the thermoelectric performance by single do** at Bi site is limited mainly due to dramatic decrease of carrier mobility. Thus, new strategies, such as dual do** or do** with variable-valence elements seem to be promising. Along with that, the development of a fast and scalable synthesis route is essential for the industrial-scale fabrication of thermoelectric materials. Hence, in this paper, Bi$_{1-x}$Sm$_{x}$CuSeO samples (0 $\leq$ $x$ $\leq$ 0.08) have been synthesized with a simple and scalable reactive sintering process. For comparison, Bi$_{1-x}$Sm$_{x}$CuSeO oxyselenides were also obtained by the conventional solid-state route. Our results highlight that, Sm for Bi substitution increases the electrical conductivity by 1.5 - 2 times and decreases the Seebeck coefficient by ~1.4 times at 873 K for both series. Overall, considering the increase of lattice thermal conductivity upon do** and not optimized power factor, the figure of merit $zT$ is reducing upon do**.
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Submitted 10 April, 2022; v1 submitted 13 December, 2021;
originally announced December 2021.
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Influence of Bi substitution with rare-earth elements on the transport properties of BiCuSeO oxyselenides
Authors:
Andrei Novitskii,
Illia Serhiienko,
Sergey Novikov,
Yerzhan Ashim,
Mark Zheleznyi,
Kirill Kuskov,
Daria Pankratova,
Petr Konstantinov,
Andrei Voronin,
Oleg Tretiakov,
Talgat Inerbaev,
Alexander Burkov,
Vladimir Khovaylo
Abstract:
In this study, we demonstrate that introducing of rare-earth elements, $R$ = La or Pr, into the Bi-O charge reservoir layer of BiCuSeO leads to an increase of both, the charge carrier concentration and the effective mass. Although the charge carrier mobility slightly decreases upon Bi$^{3+}$ to $R^{3+}$ substitution, the electronic transport properties are significantly improved in a broad tempera…
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In this study, we demonstrate that introducing of rare-earth elements, $R$ = La or Pr, into the Bi-O charge reservoir layer of BiCuSeO leads to an increase of both, the charge carrier concentration and the effective mass. Although the charge carrier mobility slightly decreases upon Bi$^{3+}$ to $R^{3+}$ substitution, the electronic transport properties are significantly improved in a broad temperature range from 100 K to 800 K. In particular, the electrical resistivity decreases by two times, while the Seebeck coefficient drops from 323 $μ$V K$^{-1}$ to 238 $μ$V K$^{-1}$ at 800 K. Thus, a power factor of nearly 3 $μ$W cm$^{-1}$ K$^{-2}$ is achieved for Bi$_{0.92}$La$_{0.08}$CuSeO sample at 800 K. Meanwhile, a noticeable decrease of the lattice thermal conductivity is observed for the substituted samples, which can be attributed to the enhanced point defect scattering mostly originated from atomic mass fluctuations between $R$ and Bi. Ultimately, a maximum $zT$ value of nearly 0.34 at 800 K is obtained for the Bi$_{0.92}$La$_{0.08}$CuSeO sample, which is ~30% higher than that of pristine BiCuSeO.
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Submitted 5 May, 2022; v1 submitted 21 April, 2021;
originally announced April 2021.
