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Backflow Effect on Spin Diffusion Near Ferromagnet-Superconductor Interface
Authors:
M. Faiz,
R. P. Panguluri,
B. Nadgorny,
B. Balke,
S. Wurmehl,
C. Felser,
A. G. Petukhov
Abstract:
The behavior of spin propagation in metals in various measurement schemes is shown to be qualitatively different than a simple exponential decay - due to the backflow effect on spin diffusion in the presence of interfaces. To probe this effect we utilize the spin sensitivity of an Andreev contact between gold films of variable thickness deposited on top of a spin injector, Co$_{2}$Mn$_{0.5}$Fe…
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The behavior of spin propagation in metals in various measurement schemes is shown to be qualitatively different than a simple exponential decay - due to the backflow effect on spin diffusion in the presence of interfaces. To probe this effect we utilize the spin sensitivity of an Andreev contact between gold films of variable thickness deposited on top of a spin injector, Co$_{2}$Mn$_{0.5}$Fe$_{0.5}$Si, with the spin polarization of approximately 45\%, and Nb superconducting tip. While the results are consistent with gradually decaying spin polarization as the film thickness increases, the spin diffusion length in Au found to be 285 nm, is more than two times larger that one would have obtained without taking the backflow effect into account.
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Submitted 20 January, 2019;
originally announced January 2019.
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On the half-metallicity of Co2FeSi Heusler alloy: an experimental and ab initio study
Authors:
L. Makinistian,
Muhammad M. Faiz,
Raghava P. Panguluri,
B. Balke,
S. Wurmehl,
C. Felser,
E. A. Albanesi,
A. G. Petukhov,
B. Nadgorny
Abstract:
Co2FeSi, a Heusler alloy with the highest magnetic moment per unit cell and the highest Curie temperature, has largely been described theoretically as a half-metal. This conclusion, however, disagrees with Point Contact Andreev Reflection (PCAR) spectroscopy measurements, which give much lower values of spin polarization, P. Here, we present the spin polarization measurements of Co2FeSi by the PCA…
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Co2FeSi, a Heusler alloy with the highest magnetic moment per unit cell and the highest Curie temperature, has largely been described theoretically as a half-metal. This conclusion, however, disagrees with Point Contact Andreev Reflection (PCAR) spectroscopy measurements, which give much lower values of spin polarization, P. Here, we present the spin polarization measurements of Co2FeSi by the PCAR technique, along with a thorough computational exploration, within the DFT and a GGA+U approach, of the Coulomb exchange U-parameters for Co and Fe atoms, taking into account spin-orbit coupling. We find that the orbital contribution (mo) to the total magnetic moment (mT) is significant, since it is at least 3 times greater than the experimental uncertainty of mT. Account of mo radically affects the acceptable values of U. Specifically, we find no values of U that would simultaneously satisfy the experimental values of the magnetic moment and result in the half-metallicity of Co2FeSi. On the other hand, the ranges of U that we report as acceptable are compatible with spin polarization measurements (ours and the ones found in the literature), which all are within approximately 40-60% range. Thus, based on reconciling experimental and computational results, we conclude that: a) spin-orbit coupling cannot be neglected in calculating Co2FeSi magnetic properties, and b) Co2FeSi Heusler alloy is not half-metallic. We believe that our approach can be applied to other Heusler alloys such as Co2FeAl.
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Submitted 1 December, 2012;
originally announced December 2012.
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Double-percolation and magnetoresistance effects in ferromagnet-superconductor nanoparticle composites
Authors:
Xiangdong Liu,
Raghava P. Panguluri,
Daniel P. Shoemaker,
Zhi-Feng Huang,
Boris Nadgorny
Abstract:
We investigate transport and magnetotransport properties of binary networks composed of superconducting (MgB2) and ferromagnetic (CrO2 or LSMO) nanoparticles. While for the LSMO/MgB2 system a single percolation threshold is observed, for CrO2/MgB2 binary composites an anomalously high resistance state with two distinct percolation thresholds corresponding to conductor-insulator and superconductor-…
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We investigate transport and magnetotransport properties of binary networks composed of superconducting (MgB2) and ferromagnetic (CrO2 or LSMO) nanoparticles. While for the LSMO/MgB2 system a single percolation threshold is observed, for CrO2/MgB2 binary composites an anomalously high resistance state with two distinct percolation thresholds corresponding to conductor-insulator and superconductor-insulator transitions is found. The existence of this double percolation effect becomes possible when the interface conductance between the two different constituents is suppressed and the condition for the two thresholds PI + PII > 1 is satisfied. For MgB2 an unusually large value of the threshold is observed, which can be explained by the significant geometric disparity between nanoparticles of the two constituents, resulting in a large excluded volume for MgB2 nanoparticles. The scaling behavior near both thresholds is determined, with the two critical exponents identified: μ\approx 2.16 \pm 0.15 for the insulating-conducting transition on the CrO2 side and s = 1.37\pm 0.05 for the insulating - superconducting transition on the MgB2 side. We also measure the magnetoresistance for the entire series of CrO2/MgB2 samples, with a maximum of approximately 45% observed near the percolation threshold at liquid He temperatures.
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Submitted 14 June, 2011;
originally announced June 2011.
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Double Percolation Transition in Superconductor/Ferromagnet Nanocomposites
Authors:
Xiangdong Liu,
Raghava P. Panguluri,
Zhi-Feng Huang,
Boris Nadgorny
Abstract:
A double percolation transition is identified in a binary network composed of nanoparticles of magnesium diborade superconductor and chromium oxide half-metallic ferromagnet. Anomalously high-resistance or insulating state, as compared to the conducting or superconducting states in single-component systems of either constituent, is observed between two distinct percolation thresholds. This doubl…
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A double percolation transition is identified in a binary network composed of nanoparticles of magnesium diborade superconductor and chromium oxide half-metallic ferromagnet. Anomalously high-resistance or insulating state, as compared to the conducting or superconducting states in single-component systems of either constituent, is observed between two distinct percolation thresholds. This double percolation effect, which is especially pronounced at liquid helium temperatures, is controlled by composite volume fraction and originates from the suppressed interface conduction and tunneling between nanoparticles of different species. We investigate the scaling behavior near both percolation thresholds, and determine the distinct critical exponents associated with two different types of transitions.
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Submitted 26 May, 2009;
originally announced May 2009.
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Ferromagnetism and spin polarized charge carriers in In$_{2}$O$_{3}$ thin films
Authors:
Raghava P. Panguluri,
P. Kharel,
C. Sudakar,
R. Naik,
R. Suryanarayanan,
V. M. Naik,
A. G. Petukhov,
B. Nadgorny,
G. Lawes
Abstract:
We present evidence for spin polarized charge carriers in In$_2$O$_3$ films. Both In$_2$O$_3$ and Cr doped In$_2$O$_3$ films exhibit room temperature ferromagnetism after vacuum annealing, with a saturation moment of approximately 0.5 emu/cm$^3$. We used Point Contact Andreev Reflection measurements to directly determine the spin polarization, which was found to be approximately 50$\pm$5% for bo…
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We present evidence for spin polarized charge carriers in In$_2$O$_3$ films. Both In$_2$O$_3$ and Cr doped In$_2$O$_3$ films exhibit room temperature ferromagnetism after vacuum annealing, with a saturation moment of approximately 0.5 emu/cm$^3$. We used Point Contact Andreev Reflection measurements to directly determine the spin polarization, which was found to be approximately 50$\pm$5% for both compositions. These results are consistent with suggestions that the ferromagnetism observed in certain oxide semiconductors may be carrier mediated.
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Submitted 7 August, 2008;
originally announced August 2008.
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Inelastic Scattering and Spin Polarization in Dilute Magnetic Semiconductor (Ga,Mn)Sb
Authors:
Raghava P. Panguluri,
B. Nadgorny,
T. Wojtowicz,
X. Liu,
J. K. Furdyna
Abstract:
The Point Contact Andreev Reflection (PCAR) technique has already been used to measure the spin polarization of some of the dilute magnetic semiconductors, such as narrow-band (In,Mn)Sb, as well as wider gap (Ga,Mn)As. While in (In,Mn)Sb conventional Andreev reflection has been demonstrated, in (Ga,Mn)As quasiparticle density of states (DOS) broadening has been observed, possibly due to inelasti…
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The Point Contact Andreev Reflection (PCAR) technique has already been used to measure the spin polarization of some of the dilute magnetic semiconductors, such as narrow-band (In,Mn)Sb, as well as wider gap (Ga,Mn)As. While in (In,Mn)Sb conventional Andreev reflection has been demonstrated, in (Ga,Mn)As quasiparticle density of states (DOS) broadening has been observed, possibly due to inelastic scattering effects. Here, we investigate the spin polarization, magnetic, and transport properties of epitaxially grown (Ga,Mn)Sb films with the Curie temperature of ~ 10K. The spin polarization of 57+/-5% was measured. Spectrum broadening in (Ga,Mn)Sb has also been observed.
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Submitted 23 October, 2007;
originally announced October 2007.
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Andreev Reflection and Pair Breaking Effects at the Superconductor/Magnetic Semiconductor Interface
Authors:
R. P. Panguluri,
K. C. Ku,
T. Wojtowicz,
X. Liu,
J. K. Furdyna,
Y. B. Lyanda-Geller,
N. Samarth,
B. Nadgorny
Abstract:
We investigate the applicability of spin polarization measurements using Andreev reflection in a point contact geometry in heavily doped dilute magnetic semiconductors, such as (Ga,Mn)As. While we observe conventional Andreev reflection in non-magnetic (Ga,Be)As epilayers, our measurements indicate that in ferromagnetic (Ga,Mn)As epilayers with comparable hole concentration the conductance spect…
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We investigate the applicability of spin polarization measurements using Andreev reflection in a point contact geometry in heavily doped dilute magnetic semiconductors, such as (Ga,Mn)As. While we observe conventional Andreev reflection in non-magnetic (Ga,Be)As epilayers, our measurements indicate that in ferromagnetic (Ga,Mn)As epilayers with comparable hole concentration the conductance spectra can only be adequately described by a broadened density of states and a reduced superconducting gap. We suggest that these pair-breaking effects stem from inelastic scattering in the metallic impurity band of (Ga,Mn)As and can be explained by introducing a finite quasiparticle lifetime or a higher effective temperature. For (Ga,Mn)As with 8% Mn concentration and 140 K Curie temperature we evaluate the spin polarization to be 83+/-17%.
PACS numbers: 72.25.Dc,72.25.Mk,74.45.+c
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Submitted 23 February, 2005; v1 submitted 22 February, 2005;
originally announced February 2005.
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Spin Polarization and Electonic Structure of Room-Curie Ferromagnetic Mn5Ge3 Epilayers
Authors:
R. P. Panguluri,
Changgan Zeng,
H. H. Weitering,
J. M. Sullivan,
S. C. Erwin,
B. Nadgorny
Abstract:
Germanium-based alloys hold great promise for future spintronics applications, due to their potential for integration with conventional Si-based electronics. Mn5Ge3 exhibits strong ferromagnetism up to the Curie temperature Tc~295K. We use Point Contact Andreev Reflection (PCAR) spectroscopy to measure the spin polarization of Mn5Ge3 epilayers grown by solid phase epitaxy on Ge(111). In addition…
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Germanium-based alloys hold great promise for future spintronics applications, due to their potential for integration with conventional Si-based electronics. Mn5Ge3 exhibits strong ferromagnetism up to the Curie temperature Tc~295K. We use Point Contact Andreev Reflection (PCAR) spectroscopy to measure the spin polarization of Mn5Ge3 epilayers grown by solid phase epitaxy on Ge(111). In addition, we calculate the spin polarization of bulk Mn5Ge3 in the diffusive and ballistic regimes using density-functional theory. The measured spin polarization, Pc=43+/-5% is compared to our theoretical estimates, PDFT=10+/-5% and 35+/-5% in the ballistic and diffusive limits respectively.
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Submitted 30 June, 2004;
originally announced July 2004.
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Measurement of Spin Polarization by Andreev Reflection in Ferromagnetic In1-xMnxSb Epilayers
Authors:
R. P. Panguluri,
B. Nadgorny,
T. Wojtowicz,
W. L. Lim,
X. Liu,
J. K. Furdyna
Abstract:
We carried out Point Contact Andreev Reflection (PCAR) spin spectroscopy measurements on epitaxially-grown ferromagnetic In1-xMnxSb epilayers with a Curie temperature of ~9K. The spin sensitivity of PCAR in this material was demonstrated by parallel control studies on its non-magnetic analog, In1-yBeySb. We found the conductance curves of the Sn point contacts with In1-yBeySb to be fairly conven…
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We carried out Point Contact Andreev Reflection (PCAR) spin spectroscopy measurements on epitaxially-grown ferromagnetic In1-xMnxSb epilayers with a Curie temperature of ~9K. The spin sensitivity of PCAR in this material was demonstrated by parallel control studies on its non-magnetic analog, In1-yBeySb. We found the conductance curves of the Sn point contacts with In1-yBeySb to be fairly conventional, with the possible presence of proximity-induced superconductivity effects at the lowest temperatures. The experimental Z-values of interfacial scattering agreed well with the estimates based on the Fermi velocity mismatch between the semiconductor and the superconductor. These measurements provided control data for subsequent PCAR measurements on ferromagnetic In1-xMnxSb, which indicated spin polarization in In1-xMnxSb to be 52 +- 3%.
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Submitted 17 March, 2004;
originally announced March 2004.
