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Long-range Phase Coherence and Tunable Second Order $φ_0$-Josephson Effect in a Dirac Semimetal $1T-PtTe_2$
Authors:
Pranava K. Sivakumar,
Mostafa T. Ahari,
Jae-Keun Kim,
Yufeng Wu,
Anvesh Dixit,
George J. de Coster,
Avanindra K. Pandeya,
Matthew J. Gilbert,
Stuart S. P. Parkin
Abstract:
Superconducting diode effects have recently attracted much attention for their potential applications in superconducting logic circuits. Several mechanisms such as magneto-chiral effects, finite momentum Cooper pairing, asymmetric edge currents have been proposed to give rise to a supercurrent diode effect in different materials. In this work, we establish the presence of a large intrinsic Josephs…
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Superconducting diode effects have recently attracted much attention for their potential applications in superconducting logic circuits. Several mechanisms such as magneto-chiral effects, finite momentum Cooper pairing, asymmetric edge currents have been proposed to give rise to a supercurrent diode effect in different materials. In this work, we establish the presence of a large intrinsic Josephson diode effect in a type-II Dirac semimetal $1T-PtTe_2$ facilitated by its helical spin-momentum locking and distinguish it from other extrinsic effects. The magnitude of the Josephson diode effect is shown to be directly correlated to the large second-harmonic component of the supercurrent that is induced by the significant contribution of the topological spin-momentum locked states that promote coherent Andreev processes in the junction. We denote such junctions, where the relative phase between the two harmonics corresponding to charge transfers of $2e$ and $4e$ can be tuned by a magnetic field, as second order $φ_0$-junctions. The direct correspondence between the second harmonic supercurrent component and the diode effect in $1T-PtTe_2$ junctions makes topological semimetals with high transparency an ideal platform to study and implement the Josephson diode effect, while also enabling further research on higher order supercurrent transport in Josephson junctions.
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Submitted 28 March, 2024;
originally announced March 2024.
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Terahertz spin-to-charge current conversion in stacks of ferromagnets and the transition-metal dichalcogenide NbSe$_2$
Authors:
Lukáš Nádvorník,
Oliver Gueckstock,
Lukas Braun,
Chengwang Niu,
Joachim Gräfe,
Gunther Richter,
Gisela Schütz,
Hidenori Takagi,
Tom S. Seifert,
Peter Kubaščík,
Avanindra K. Pandeya,
Abdelmadjid Anane,
Heejun Yang,
Amilcar Bedoya-Pinto,
Stuart S. P. Parkin,
Martin Wolf,
Yuriy Mokrousov,
Hiroyuki Nakamura,
Tobias Kampfrath
Abstract:
Transition-metal dichalcogenides (TMDCs) are an aspiring class of materials with unique electronic and optical properties and potential applications in spin-based electronics. Here, we use terahertz emission spectroscopy to study spin-to-charge current conversion (S2C) in the TMDC NbSe$_2$ in ultra-high-vacuum-grown F|NbSe$_2$ thin-film stacks, where F is a layer of ferromagnetic Fe or Ni. Ultrafa…
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Transition-metal dichalcogenides (TMDCs) are an aspiring class of materials with unique electronic and optical properties and potential applications in spin-based electronics. Here, we use terahertz emission spectroscopy to study spin-to-charge current conversion (S2C) in the TMDC NbSe$_2$ in ultra-high-vacuum-grown F|NbSe$_2$ thin-film stacks, where F is a layer of ferromagnetic Fe or Ni. Ultrafast laser excitation triggers an ultrafast spin current that is converted into an in-plane charge current and, thus, a measurable THz electromagnetic pulse. The THz signal amplitude as a function of the NbSe$_2$ thickness shows that the measured signals are fully consistent with an ultrafast optically driven injection of an in-plane-polarized spin current into NbSe$_2$. Modeling of the spin-current dynamics reveals that a sizable fraction of the total S2C originates from the bulk of NbSe$_2$ with the same, negative, sign as the spin Hall angle of pure Nb. By quantitative comparison of the emitted THz radiation from F|NbSe$_2$ to F|Pt reference samples and the results of ab-initio calculations, we estimate that the spin Hall angle of NbSe$_2$ for an in-plane polarized spin current lies between -0.2% and -1.1%, while the THz spin-current relaxation length is of the order of a few nanometers.
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Submitted 1 August, 2022;
originally announced August 2022.
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Josephson diode effect from Cooper pair momentum in a topological semimetal
Authors:
Banabir Pal1,
Anirban Chakraborty,
Pranava K. Sivakumar,
Margarita Davydova,
Ajesh K. Gopi,
Avanindra K. Pandeya,
Jonas A. Krieger,
Yang Zhang,
Mihir Date,
Sailong Ju,
Noah Yuan,
Niels B. M. Schröter,
Liang Fu,
Stuart S. P. Parkin
Abstract:
In the presence of an external magnetic field Cooper pairs in noncentrosymmetric superconductors can acquire finite momentum. Recent theory predicts that such finite-momentum pairing can lead to an asymmetric critical current, where a dissipationless supercurrent can flow along one direction but not the opposite. However, to date this has not been observed. Here we report the discovery of a giant…
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In the presence of an external magnetic field Cooper pairs in noncentrosymmetric superconductors can acquire finite momentum. Recent theory predicts that such finite-momentum pairing can lead to an asymmetric critical current, where a dissipationless supercurrent can flow along one direction but not the opposite. However, to date this has not been observed. Here we report the discovery of a giant Josephson diode effect (JDE) in Josephson junctions formed from a type II Dirac semimetal, NiTe2. A distinguishing feature is that the asymmetry in the critical current depends sensitively on the magnitude and direction of an applied magnetic field and achieves its maximum value of ~60% when the magnetic field is perpendicular to the current and is of the order of just 10 mT. Moreover the asymmetry changes sign several times with increasing field. These characteristic features are accounted for in a theoretical model based on finite-momentum Cooper pairing derived from spin-helical topological surface states, in an otherwise centrosymmetric system. The finite pairing momentum is further established, and its value determined, from the evolution of the interference pattern under an in-plane magnetic field. The observed giant magnitude of the asymmetry in critical current and the clear exposition of its underlying mechanism paves the way to building novel superconducting computing devices using the Josephson diode effect.
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Submitted 21 December, 2021;
originally announced December 2021.
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Do**-induced spin Hall ratio enhancement in A15-phase, Ta-doped Beta-W thin films
Authors:
Mohsin Z. Minhas,
Avanindra K. Pandeya,
Bharat Grover,
Alessandro Fumarola,
Ilya Kostanovskiy,
Wolfgang Hoppe,
Georg Woltersdorf,
Amilcar Bedoya-Pinto,
Stuart S. P. Parkin,
Mazhar N. Ali
Abstract:
As spintronic devices become more and more prevalent, the desire to find Pt free materials with large spin Hall effects is increasing. Previously it was shown that Beta W, the metastable A15 structured variant of pure W, has charge-spin conversion efficiencies on par with Pt, and it was predicted that Beta W(Ta) alloys should be even more efficient. Here we demonstrate the enhancement of the spin…
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As spintronic devices become more and more prevalent, the desire to find Pt free materials with large spin Hall effects is increasing. Previously it was shown that Beta W, the metastable A15 structured variant of pure W, has charge-spin conversion efficiencies on par with Pt, and it was predicted that Beta W(Ta) alloys should be even more efficient. Here we demonstrate the enhancement of the spin Hall ratio (SHR) in A15-phase Beta W films doped with Ta (W(4-x)Tax where x is between 0.28 and 0.4, deposited at room temperature using DC magnetron co-sputtering. In close agreement with theoretical predictions, we find that the SHR of the doped films was approx. 9 percent larger than pure Beta W films. We also found that the SHRs in devices with Co2Fe6B2 were nearly twice as large as the SHRs in devices with Co4Fe4B2. This work shows that by optimizing deposition parameters and substrates, the fabrication of the optimum W3Ta alloy should be feasible, opening the door to commercially viable, Pt free, spintronic devices.
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Submitted 18 May, 2020; v1 submitted 15 May, 2020;
originally announced May 2020.
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Towards Weyltronics: Realization of epitaxial NbP and TaP Weyl Semimetal thin films
Authors:
Amilcar Bedoya-Pinto,
Avanindra Kumar Pandeya,
Defa Liu,
Hakan Deniz,
Kai Chang,
Hengxin Tan,
Hyeon Han,
Jagannath Jena,
Ilya Kostanovskiy,
Stuart Parkin
Abstract:
Weyl Semimetals (WSMs), a recently discovered topological state of matter, exhibit an electronic structure governed by linear band dispersions and degeneracy (Weyl) points leading to rich physical phenomena, which are yet to be exploited in thin film devices. While WSMs were established in the monopnictide compound family several years ago, the growth of thin films has remained a challenge. Here,…
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Weyl Semimetals (WSMs), a recently discovered topological state of matter, exhibit an electronic structure governed by linear band dispersions and degeneracy (Weyl) points leading to rich physical phenomena, which are yet to be exploited in thin film devices. While WSMs were established in the monopnictide compound family several years ago, the growth of thin films has remained a challenge. Here, we report the growth of epitaxial thin films of NbP and TaP by means of molecular beam epitaxy. Single crystalline films are grown on MgO (001) substrates using thin Nb (Ta) buffer layers, and are found to be tensile strained (1%) and with slightly P-rich stoichiometry with respect to the bulk crystals. The resulting electronic structure exhibits topological surface states characteristic of a P-terminated surface and linear dispersion bands in agreement with the calculated band structure, and a Fermi-level shift of -0.2 eV with respect to the Weyl points. Consequently, the electronic transport is dominated by both holes and electrons with carrier mobilities close to 10^3 cm2/Vs at room-temperature. The growth of epitaxial thin films opens up the use of strain and controlled do** to access and tune the electronic structure of Weyl Semimetals on demand, paving the way for the rational design and fabrication of electronic devices ruled by topology.
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Submitted 27 September, 2019;
originally announced September 2019.
