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First results on monolithic CMOS detector with internal gain
Authors:
U. Follo,
G. Gioachin,
C. Ferrero,
M. Mandurrino,
M. Bregant,
S. Bufalino,
F. Carnesecchi,
D. Cavazza,
M. Colocci,
T. Corradino,
M. Da Rocha Rolo,
G. Di Nicolantonio,
S. Durando,
G. Margutti,
M. Mignone,
R. Nania,
L. Pancheri,
A. Rivetti,
B. Sabiu,
G. G. A. de Souza,
S. Strazzi,
R. Wheadon
Abstract:
In this paper we report on a set of characterisations carried out on the first monolithic LGAD prototype integrated in a customised 110 nm CMOS process having a depleted active volume thickness of 48 $μ$m. This prototype is formed by a pixel array where each pixel has a total size of 100 $μ$m $\times$ 250 $μ$m and includes a high-speed front-end amplifier. After describing the sensor and the elect…
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In this paper we report on a set of characterisations carried out on the first monolithic LGAD prototype integrated in a customised 110 nm CMOS process having a depleted active volume thickness of 48 $μ$m. This prototype is formed by a pixel array where each pixel has a total size of 100 $μ$m $\times$ 250 $μ$m and includes a high-speed front-end amplifier. After describing the sensor and the electronics architecture, both laboratory and in-beam measurements are reported and described. Optical characterisations performed with an IR pulsed laser setup have shown a sensor internal gain of about 2.5. With the same experimental setup, the electronic jitter was found to be between 50 ps and 150 ps, depending on the signal amplitude. Moreover, the analysis of a test beam performed at the Proton Synchrotron (PS) T10 facility of CERN with 10 GeV/c protons and pions indicated that the overall detector time resolution is in the range of 234 ps to 244 ps. Further TCAD investigations, based on the do** profile extracted from $C(V)$ measurements, confirmed the multiplication gain measured on the test devices. Finally, TCAD simulations were used to tune the future do** concentration of the gain layer implant, targeting sensors with a higher avalanche gain. This adjustment is expected to enhance the timing performance of the sensors of the future productions, in order to cope with the high event rate expected in most of the near future high-energy and high-luminosity physics experiments, where the time resolution will be essential to disentangle overlap** events and it will also be crucial for Particle IDentification (PID).
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Submitted 28 June, 2024;
originally announced June 2024.
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High-Precision 4D Tracking with Large Pixels using Thin Resistive Silicon Detectors
Authors:
R. Arcidiacono,
G. Borghi,
M. Boscardin,
N. Cartiglia,
M. Centis Vignali,
M. Costa,
G-F. Dalla Betta,
M. Ferrero,
F. Ficorella,
G. Gioachin,
L. Lanteri,
M. Mandurrino,
L. Menzio,
R. Mulargia,
L. Pancheri,
G. Paternoster,
A. Rojas,
H-F W. Sadrozinski,
A. Seiden,
F. Siviero,
V. Sola,
M. Tornago
Abstract:
The basic principle of operation of silicon sensors with resistive read-out is built-in charge sharing. Resistive Silicon Detectors (RSD, also known as AC-LGAD), exploiting the signals seen on the electrodes surrounding the impact point, achieve excellent space and time resolutions even with very large pixels. In this paper, a TCT system using a 1064 nm picosecond laser is used to characterize sen…
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The basic principle of operation of silicon sensors with resistive read-out is built-in charge sharing. Resistive Silicon Detectors (RSD, also known as AC-LGAD), exploiting the signals seen on the electrodes surrounding the impact point, achieve excellent space and time resolutions even with very large pixels. In this paper, a TCT system using a 1064 nm picosecond laser is used to characterize sensors from the second RSD production at the Fondazione Bruno Kessler. The paper first introduces the parametrization of the errors in the determination of the position and time coordinates in RSD, then outlines the reconstruction method, and finally presents the results. Three different pixel sizes are used in the analysis: 200 x 340, 450 x 450, and 1300 x 1300 microns^2. At gain = 30, the 450 x 450 microns^2 pixel achieves a time jitter of 20 ps and a spatial resolution of 15 microns concurrently, while the 1300 x 1300 microns^2 pixel achieves 30 ps and 30 micron, respectively. The implementation of cross-shaped electrodes improves considerably the response uniformity over the pixel surface.
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Submitted 24 November, 2022;
originally announced November 2022.
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Beam test results of 25 $μ$m and 35 $μ$m thick FBK UFSD]{Beam test results of 25 $μ$m and 35 $μ$m thick FBK ultra fast silicon detectors
Authors:
F. Carnesecchi,
S. Strazzi,
A. Alici,
R. Arcidiacono,
G. Borghi,
M. Boscardin,
N. Cartiglia,
M. Centis Vignali,
D. Cavazza,
G. -F. Dalla Betta,
S. Durando,
M. Ferrero,
F. Ficorella,
O. Hammad Ali,
M. Mandurrino,
A. Margotti,
L. Menzio,
R. Nania,
L. Pancheri,
G. Paternoster,
G. Scioli,
F. Siviero,
V. Sola,
M. Tornago,
G. Vignola
Abstract:
This paper presents the measurements on first very thin Ultra Fast Silicon Detectors (UFSDs) produced by Fondazione Bruno Kessler; the data have been collected in a beam test setup at the CERN PS, using beam with a momentum of 12 GeV/c. UFSDs with a nominal thickness of 25 $μ$m and 35 $μ$m and an area of 1 $\times$ 1 $\text{mm}^2$ have been considered, together with an additional HPK 50-$μ$m thick…
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This paper presents the measurements on first very thin Ultra Fast Silicon Detectors (UFSDs) produced by Fondazione Bruno Kessler; the data have been collected in a beam test setup at the CERN PS, using beam with a momentum of 12 GeV/c. UFSDs with a nominal thickness of 25 $μ$m and 35 $μ$m and an area of 1 $\times$ 1 $\text{mm}^2$ have been considered, together with an additional HPK 50-$μ$m thick sensor, taken as reference. Their timing performances have been studied as a function of the applied voltage and gain. A time resolution of about 25 ps and of 22 ps at a voltage of 120 V and 240 V has been obtained for the 25 and 35 $μ$m thick UFSDs, respectively.
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Submitted 11 August, 2022;
originally announced August 2022.
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DC-coupled resistive silicon detectors for 4-D tracking
Authors:
L. Menzio,
R. Arcidiacono,
G. Borghi,
M. Boscardin,
N. Cartiglia,
M. Centis Vignali,
M. Costa,
G-F. Dalla Betta,
M. Ferrero,
F. Ficorella,
G. Gioachin,
M. Mandurrino,
L. Pancheri,
G. Paternoster,
F. Siviero,
V. Sola,
M. Tornago
Abstract:
In this work, we introduce a new design concept: the DC-Coupled Resistive Silicon Detectors, based on the LGAD technology. This new approach intends to address a few known features of the first generation of AC-Coupled Resistive Silicon Detectors (RSD). Our simulation exploits a fast hybrid approach based on a combination of two packages, Weightfield2 and LTSpice. It demonstrates that the key feat…
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In this work, we introduce a new design concept: the DC-Coupled Resistive Silicon Detectors, based on the LGAD technology. This new approach intends to address a few known features of the first generation of AC-Coupled Resistive Silicon Detectors (RSD). Our simulation exploits a fast hybrid approach based on a combination of two packages, Weightfield2 and LTSpice. It demonstrates that the key features of the RSD design are maintained, yielding excellent timing and spatial resolutions: a few tens of ps and a few microns. In the presentation, we will outline the optimization methodology and the results of the simulation. We will present detailed studies on the effect of changing the ratio between the n+ layer resistivity and the low-resistivity ring and on the achievable temporal and spatial resolution.
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Submitted 14 April, 2022;
originally announced April 2022.
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Tuning of gain layer do** concentration and Carbon implantation effect on deep gain layer
Authors:
S. M. Mazza,
C. Gee,
Y. Zhao,
R. Padilla,
E. Ryan,
N. Tournebise,
B. Darby,
F. McKinney-Martinez,
H. F. -W. Sadrozinski,
A. Seiden,
B. Schumm,
V. Cindro,
G. Kramberger,
I. Mandić,
M. Mikuž,
M. Zavrtanik,
R. Arcidiacono,
N. Cartiglia,
M. Ferrero,
M. Mandurrino,
V. Sola,
A. Staiano,
M. Boscardin,
G. F. Della Betta,
F. Ficorella
, et al. (2 additional authors not shown)
Abstract:
Next generation Low Gain Avalanche Diodes (LGAD) produced by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with ~1MeV neutrons at the JSI facility in Ljubljana. Sensors were irradiated to a maximum 1-MeV equivalent fluence of 2.5E15 Neq/cm2. The sensors analysed in this paper are an improvement after the lessons learned from previous FBK and…
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Next generation Low Gain Avalanche Diodes (LGAD) produced by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with ~1MeV neutrons at the JSI facility in Ljubljana. Sensors were irradiated to a maximum 1-MeV equivalent fluence of 2.5E15 Neq/cm2. The sensors analysed in this paper are an improvement after the lessons learned from previous FBK and HPK productions that were already reported in precedent papers. The gain layer of HPK sensors was fine-tuned to optimize the performance before and after irradiation. FBK sensors instead combined the benefit of Carbon infusion and deep gain layer to further the radiation hardness of the sensors and reduced the bulk thickness to enhance the timing resolution. The sensor performance was measured in charge collection studies using \b{eta}-particles from a 90Sr source and in capacitance-voltage scans (C-V) to determine the bias to deplete the gain layer. The collected charge and the timing resolution were measured as a function of bias voltage at -30C. Finally a correlation is shown between the bias voltage to deplete the gain layer and the bias voltage needed to reach a certain amount of gain in the sensor. HPK sensors showed a better performance before irradiation while maintaining the radiation hardness of the previous production. FBK sensors showed exceptional radiation hardness allowing a collected charge up to 10 fC and a time resolution of 40 ps at the maximum fluence.
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Submitted 31 January, 2022; v1 submitted 21 January, 2022;
originally announced January 2022.
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Optimization of the Gain Layer Design of Ultra-Fast Silicon Detectors
Authors:
Federico Siviero,
Roberta Arcidiacono,
Giacomo Borghi,
Maurizio Boscardin,
Nicolo Cartiglia,
Matteo Centis Vignali,
Marco Costa,
Gian Franco Dalla Betta,
Marco Ferrero,
Francesco Ficorella,
Giulia Gioachin,
Marco Mandurrino,
Simone Mazza,
Luca Menzio,
Lucio Pancheri,
Giovanni Paternoster,
Hartmut F. W. Sadrozinski,
Abraham Seiden,
Valentina Sola,
Marta Tornago
Abstract:
In the past few years, the need of measuring accurately the spatial and temporal coordinates of the particles generated in high-energy physics experiments has spurred a strong R\&D in the field of silicon sensors. Within these research activities, the so-called Ultra-Fast Silicon Detectors (UFSDs), silicon sensors optimized for timing based on the Low-Gain Avalanche Diode (LGAD) design, have been…
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In the past few years, the need of measuring accurately the spatial and temporal coordinates of the particles generated in high-energy physics experiments has spurred a strong R\&D in the field of silicon sensors. Within these research activities, the so-called Ultra-Fast Silicon Detectors (UFSDs), silicon sensors optimized for timing based on the Low-Gain Avalanche Diode (LGAD) design, have been proposed and adopted by the CMS and ATLAS collaborations for their respective timing layers. The defining feature of the Ultra-Fast Silicon Detectors (UFSDs) is the internal multiplication mechanism, determined by the gain layer design. In this paper, the performances of several types of gain layers, measured with a telescope instrumented with a $^{90}$Sr $β$-source, are reported and compared. The measured sensors are produced by Fondazione Bruno Kessler (FBK) and Hamamatsu Photonics (HPK). The sensor yielding the best performance, both when new and irradiated, is an FBK 45\mum-thick sensor with a carbonated deep gain implant, where the carbon and the boron implants are annealed concurrently with a low thermal load. This sensor is able to achieve a time resolution of 40~ps up to a radiation fluence of~\fluence{2.5}{15}, delivering at least 5~fC of charge.
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Submitted 8 March, 2022; v1 submitted 1 December, 2021;
originally announced December 2021.
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The second production of RSD (AC-LGAD) at FBK
Authors:
M. Mandurrino,
R. Arcidiacono,
A. Bisht,
G. Borghi,
M. Boscardin,
N. Cartiglia,
M. Centis Vignali,
G. -F. Dalla Betta,
M. Ferrero,
F. Ficorella,
O. Hammad Ali,
A. D. Martinez Rojas,
L. Menzio,
L. Pancheri,
G. Paternoster,
F. Siviero,
V. Sola,
M. Tornago
Abstract:
In this contribution we describe the second run of RSD (Resistive AC-Coupled Silicon Detectors) designed at INFN Torino and produced by Fondazione Bruno Kessler (FBK), Trento. RSD are n-in-p detectors intended for 4D particle tracking based on the LGAD technology that get rid of any segmentation implant in order to achieve the 100% fill-factor. They are characterized by three key-elements, (i) a c…
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In this contribution we describe the second run of RSD (Resistive AC-Coupled Silicon Detectors) designed at INFN Torino and produced by Fondazione Bruno Kessler (FBK), Trento. RSD are n-in-p detectors intended for 4D particle tracking based on the LGAD technology that get rid of any segmentation implant in order to achieve the 100% fill-factor. They are characterized by three key-elements, (i) a continuous gain implant, (ii) a resistive n-cathode and (iii) a dielectric coupling layer deposited on top, guaranteeing a good spatial reconstruction of the hit position while benefiting from the good timing properties of LGADs. We will start from the very promising results of our RSD1 batch in terms of tracking performances and then we will move to the description of the design of the RSD2 run. In particular, the principles driving the sensor design and the specific AC-electrode layout adopted to optimize the signal confinement will be addressed.
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Submitted 8 June, 2022; v1 submitted 28 November, 2021;
originally announced November 2021.
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Inter-pad dead regions of irradiated FBK Low Gain Avalanche Detectors
Authors:
B. Darby,
S. M. Mazza,
F. McKinney-Martinez,
R. Padilla,
H. F. -W. Sadrozinski,
A. Seiden,
B. Schumm,
M. Wilder,
Y. Zhao,
R. Arcidiacono,
N. Cartiglia,
M. Ferrero,
M. Mandurrino,
V. Sola,
A. Staiano,
V. Cindro,
G. Kranberger,
I. Mandiz,
M. Mikuz,
M. Zavtranik,
M. Boscardin,
G. F. Della Betta,
F. Ficorella,
L. Pancheri,
G. Paternoster
Abstract:
Low Gain Avalanche Detectors (LGADs) are a type of thin silicon detector with a highly doped gain layer. LGADs manufactured by Fondazione Bruno Kessler (FBK) were tested before and after irradiation with neutrons. In this study, the Inter-pad distances (IPDs), defined as the width of the distances between pads, were measured with a TCT laser system. The response of the laser was tuned using $β$-pa…
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Low Gain Avalanche Detectors (LGADs) are a type of thin silicon detector with a highly doped gain layer. LGADs manufactured by Fondazione Bruno Kessler (FBK) were tested before and after irradiation with neutrons. In this study, the Inter-pad distances (IPDs), defined as the width of the distances between pads, were measured with a TCT laser system. The response of the laser was tuned using $β$-particles from a 90Sr source. These insensitive "dead zones" are created by a protection structure to avoid breakdown, the Junction Termination Extension (JTE), which separates the pads. The effect of neutron radiation damage at \fluence{1.5}{15}, and \fluence{2.5}{15} on IPDs was studied. These distances are compared to the nominal distances given from the vendor, it was found that the higher fluence corresponds to a better matching of the nominal IPD.
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Submitted 19 September, 2022; v1 submitted 24 November, 2021;
originally announced November 2021.
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Fully Depleted Monolithic Active Microstrip Sensors: TCAD simulation study of an innovative design concept
Authors:
Lorenzo De Cilladi,
Thomas Corradino,
Gian-Franco Dalla Betta,
Coralie Neubüser,
Lucio Pancheri
Abstract:
The paper presents the simulation studies of 10 $μ$m pitch microstrips on a fully depleted monolithic active CMOS technology and describes their potential to provide a new and cost-effective solution for particle tracking and timing applications. The Fully Depleted Monolithic Active Microstrip Sensors (FD-MAMS) described in this work, which are developed within the framework of the ARCADIA project…
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The paper presents the simulation studies of 10 $μ$m pitch microstrips on a fully depleted monolithic active CMOS technology and describes their potential to provide a new and cost-effective solution for particle tracking and timing applications. The Fully Depleted Monolithic Active Microstrip Sensors (FD-MAMS) described in this work, which are developed within the framework of the ARCADIA project, are compliant with commercial CMOS fabrication processes. A TCAD simulation campaign was performed in the perspective of an upcoming engineering production run with the aim of designing FD-MAMS, studying their electrical characteristics and optimising the sensor layout for enhanced performance in terms of low capacitance, fast charge collection and low-power operation. A very fine pitch of 10 $μ$m was chosen to provide very high spatial resolution. This small pitch still allows readout electronics to be monolithically integrated in the inter-strip regions, enabling the segmentation of long strips and the implementation of distributed readout architectures. The effects of surface radiation damage expected for total ionising doses of the order of 10 to 10$^5$ krad were also modelled in the simulations. The results of the simulations exhibit promising performance in terms of timing and low power consumption and motivate R&D efforts to further develop FD-MAMS; the results will be experimentally verified through measurements on the test structures that will be available at the beginning of 2021.
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Submitted 22 January, 2021;
originally announced January 2021.
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Sensor design optimization of innovative low-power, large area MAPS for HEP and applied science
Authors:
Coralie Neubüser,
Thomas Corradino,
Gian-Franco Dalla Betta,
Lorenzo De Cilladi,
Lucio Pancheri
Abstract:
Fully Depleted Monolithic Active Pixels (FD-MAPS) represent a state-of-the-art detector technology and profit from a low material budget and cost for high energy physics experiments and other fields of research like medical imaging and astro-particle physics. Compared to the MAPS currently in use, fully depleted pixel sensors have the advantage of charge collection by drift, which enables a fast a…
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Fully Depleted Monolithic Active Pixels (FD-MAPS) represent a state-of-the-art detector technology and profit from a low material budget and cost for high energy physics experiments and other fields of research like medical imaging and astro-particle physics. Compared to the MAPS currently in use, fully depleted pixel sensors have the advantage of charge collection by drift, which enables a fast and uniform response overall the pixel matrix. The functionality of these devices has been shown in previous proof-of-concept productions. In this article we describe the optimization of the test pixel designs, that will be implemented in the first engineering run of the demonstrator chip of the ARCADIA project. These optimization procedures include radiation damage models, that have been employed in Technology Computer Aided Design simulations to predict the sensors behavior in different working environments.
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Submitted 18 August, 2021; v1 submitted 19 November, 2020;
originally announced November 2020.
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Resistive AC-Coupled Silicon Detectors: principles of operation and first results from a combined analysis of beam test and laser data
Authors:
M. Tornago,
R. Arcidiacono,
N. Cartiglia,
M. Costa,
M. Ferrero,
M. Mandurrino,
F. Siviero,
V. Sola,
A. Staiano,
A. Apresyan,
K. Di Petrillo,
R. Heller,
S. Los,
G. Borghi,
M. Boscardin,
G-F Dalla Betta,
F. Ficorella,
L. Pancheri,
G. Paternoster,
H. Sadrozinski,
A. Seiden
Abstract:
This paper presents the principles of operation of Resistive AC-Coupled Silicon Detectors (RSDs) and measurements of the temporal and spatial resolutions using a combined analysis of laser and beam test data. RSDs are a new type of n-in-p silicon sensor based on the Low-Gain Avalanche Diode (LGAD) technology, where the $n^+$ implant has been designed to be resistive, and the read-out is obtained v…
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This paper presents the principles of operation of Resistive AC-Coupled Silicon Detectors (RSDs) and measurements of the temporal and spatial resolutions using a combined analysis of laser and beam test data. RSDs are a new type of n-in-p silicon sensor based on the Low-Gain Avalanche Diode (LGAD) technology, where the $n^+$ implant has been designed to be resistive, and the read-out is obtained via AC-coupling. The truly innovative feature of RSD is that the signal generated by an im**ing particle is shared isotropically among multiple read-out pads without the need for floating electrodes or an external magnetic field. Careful tuning of the coupling oxide thickness and the $n^+$ do** profile is at the basis of the successful functioning of this device. Several RSD matrices with different pad width-pitch geometries have been extensively tested with a laser setup in the Laboratory for Innovative Silicon Sensors in Torino, while a smaller set of devices have been tested at the Fermilab Test Beam Facility with a 120 GeV/c proton beam. The measured spatial resolution ranges between $2.5\; μm$ for 70-100 pad-pitch geometry and $17\; μm$ with 200-500 matrices, a factor of 10 better than what is achievable in binary read-out ($bin\; size/ \sqrt{12}$). Beam test data show a temporal resolution of $\sim 40\; ps$ for 200-$μm$ pitch devices, in line with the best performances of LGAD sensors at the same gain.
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Submitted 11 February, 2021; v1 submitted 18 July, 2020;
originally announced July 2020.
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High performance picosecond- and micron-level 4D particle tracking with 100% fill-factor Resistive AC-Coupled Silicon Detectors (RSD)
Authors:
M. Mandurrino,
N. Cartiglia,
M. Tornago,
M. Ferrero,
F. Siviero,
G. Paternoster,
F. Ficorella,
M. Boscardin,
L. Pancheri,
G. F. Dalla Betta
Abstract:
In this paper we present a complete characterization of the first batch of Resistive AC-Coupled Silicon Detectors, called RSD1, designed at INFN Torino and manufactured by Fondazione Bruno Kessler (FBK) in Trento. With their 100% fill-factor, RSD represent the new enabling technology for high-precision 4D-tracking. Indeed, being based on the well-known charge multiplication mechanism of Low-Gain A…
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In this paper we present a complete characterization of the first batch of Resistive AC-Coupled Silicon Detectors, called RSD1, designed at INFN Torino and manufactured by Fondazione Bruno Kessler (FBK) in Trento. With their 100% fill-factor, RSD represent the new enabling technology for high-precision 4D-tracking. Indeed, being based on the well-known charge multiplication mechanism of Low-Gain Avalanche Detectors (LGAD), they benefit from the very good timing performances of such technology together with an unprecedented resolution of the spatial tracking, which allows to reach the micron-level scale in the track reconstruction. This is essentially due to the absence of any segmentation structure between pads (100% fill-factor) and to other two innovative key-features: the first one is a properly doped n+ resistive layer, slowing down the charges just after being multiplied, and the second one is a dielectric layer grown on Silicon, inducing a capacitive coupling on the metal pads deposited on top of the detector. The very good spatial resolution (micron-level) we measured experimentally - higher than the nominal pad pitch - comes from the analogical nature of the readout of signals, whose amplitude attenuates from the pad center to its periphery, while the outstanding results in terms of timing (less than 14 ps, even better than standard LGAD) are due to a combination of very-fine pitch, analogical response and charge multiplication.
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Submitted 24 March, 2020; v1 submitted 10 March, 2020;
originally announced March 2020.
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First demonstration of 200, 100, and 50 um pitch Resistive AC-Coupled Silicon Detectors (RSD) with 100% fill-factor for 4D particle tracking
Authors:
M. Mandurrino,
R. Arcidiacono,
M. Boscardin,
N. Cartiglia,
G. F. Dalla Betta,
M. Ferrero,
F. Ficorella,
L. Pancheri,
G. Paternoster,
F. Siviero,
M. Tornago
Abstract:
We designed, produced, and tested RSD (Resistive AC-Coupled Silicon Detectors) devices, an evolution of the standard LGAD (Low-Gain Avalanche Diode) technology where a resistive n-type implant and a coupling dielectric layer have been implemented. The first feature works as a resistive sheet, freezing the multiplied charges, while the second one acts as a capacitive coupling for readout pads. We s…
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We designed, produced, and tested RSD (Resistive AC-Coupled Silicon Detectors) devices, an evolution of the standard LGAD (Low-Gain Avalanche Diode) technology where a resistive n-type implant and a coupling dielectric layer have been implemented. The first feature works as a resistive sheet, freezing the multiplied charges, while the second one acts as a capacitive coupling for readout pads. We succeeded in the challenging goal of obtaining very fine pitch (50, 100, and 200 um) while maintaining the signal waveforms suitable for high timing and 4D-tracking performances, as in the standard LGAD-based devices.
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Submitted 23 September, 2019; v1 submitted 7 July, 2019;
originally announced July 2019.
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Proprieties of FBK UFSDs after neutron and proton irradiation up to 6*10e15 neq/cm2
Authors:
S. M. Mazza,
E. Estrada,
Z. Galloway,
C. Gee,
A. Goto,
Z. Luce,
F. McKinney-Martinez,
R. Rodriguez,
H. F. -W. Sadrozinski,
A. Seiden,
B. Smithers,
Y. Zhao,
V. Cindro,
G. Kramberger,
I. Mandić,
M. Mikuž,
M. Zavrtanik R. Arcidiacono,
N. Cartiglia,
M. Ferrero,
M. Mandurrino,
V. Sola,
A. Staiano,
M. Boscardin,
G. F. Della Betta,
F. Ficorella
, et al. (2 additional authors not shown)
Abstract:
The properties of 60-μm thick Ultra-Fast Silicon Detectors (UFSD) detectors manufactured by Fondazione Bruno Kessler (FBK), Trento (Italy) were tested before and after irradiation with minimum ionizing particles (MIPs) from a 90Sr \b{eta}-source . This FBK production, called UFSD2, has UFSDs with gain layer made of Boron, Boron low-diffusion, Gallium, Carbonated Boron and Carbonated. The irradiati…
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The properties of 60-μm thick Ultra-Fast Silicon Detectors (UFSD) detectors manufactured by Fondazione Bruno Kessler (FBK), Trento (Italy) were tested before and after irradiation with minimum ionizing particles (MIPs) from a 90Sr \b{eta}-source . This FBK production, called UFSD2, has UFSDs with gain layer made of Boron, Boron low-diffusion, Gallium, Carbonated Boron and Carbonated. The irradiation with neutrons took place at the TRIGA reactor in Ljubljana, while the proton irradiation took place at CERN SPS. The sensors were exposed to a neutron fluence of 4*10e14, 8*1014, 1.5*10e15, 3*10e15, 6*10e15 neq/cm2 and to a proton fluence of 9.6*10e14 p/cm2, equivalent to a fluence of 6*10e14 neq/cm2. The internal gain and the timing resolution were measured as a function of bias voltage at -20C. The timing resolution was extracted from the time difference with a second calibrated UFSD in coincidence, using the constant fraction method for both.
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Submitted 18 March, 2020; v1 submitted 15 April, 2018;
originally announced April 2018.
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First FBK Production of 50$μ$m Ultra-Fast Silicon Detectors
Authors:
V. Sola,
R. Arcidiacono,
M. Boscardin,
N. Cartiglia,
G. -F. Dalla Betta,
F. Ficorella,
M. Ferrero,
M. Mandurrino,
L. Pancheri,
G. Paternoster,
A. Staiano
Abstract:
Fondazione Bruno Kessler (FBK, Trento, Italy) has recently delivered its first 50 $μ$m thick production of Ultra-Fast Silicon Detectors (UFSD), based on the Low-Gain Avalanche Diode design. These sensors use high resistivity Si-on-Si substrates, and have a variety of gain layer do** profiles and designs based on Boron, Gallium, Carbonated Boron and Carbonated Gallium to obtain a controlled multi…
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Fondazione Bruno Kessler (FBK, Trento, Italy) has recently delivered its first 50 $μ$m thick production of Ultra-Fast Silicon Detectors (UFSD), based on the Low-Gain Avalanche Diode design. These sensors use high resistivity Si-on-Si substrates, and have a variety of gain layer do** profiles and designs based on Boron, Gallium, Carbonated Boron and Carbonated Gallium to obtain a controlled multiplication mechanism. Such variety of gain layers will allow identifying the most radiation hard technology to be employed in the production of UFSD, to extend their radiation resistance beyond the current limit of $φ\sim$ 10$^{15}$ n$_{eq}$/cm$^2$. In this paper, we present the characterisation, the timing performances, and the results on radiation damage tolerance of this new FBK production.
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Submitted 6 October, 2018; v1 submitted 12 February, 2018;
originally announced February 2018.
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Radiation resistant LGAD design
Authors:
M. Ferrero,
R. Arcidiacono,
M. Barozzi,
M. Boscardin,
N. Cartiglia,
G. F. Dalla Betta,
Z. Galloway,
M. Mandurrino,
S. Mazza,
G. Paternoster,
F. Ficorella,
L. Pancheri,
H-F W. Sadrozinski,
V. Sola,
A. Staiano,
A. Seiden,
F. Siviero,
M. Tornago,
Y. Zhao
Abstract:
In this paper, we report on the radiation resistance of 50-micron thick LGAD detectors manufactured at the Fondazione Bruno Kessler employing several different do** combinations of the gain layer. LGAD detectors with gain layer do** of Boron, Boron low-diffusion, Gallium, Carbonated Boron and Carbonated Gallium have been designed and successfully produced. These sensors have been exposed to ne…
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In this paper, we report on the radiation resistance of 50-micron thick LGAD detectors manufactured at the Fondazione Bruno Kessler employing several different do** combinations of the gain layer. LGAD detectors with gain layer do** of Boron, Boron low-diffusion, Gallium, Carbonated Boron and Carbonated Gallium have been designed and successfully produced. These sensors have been exposed to neutron fluences up to $φ_n \sim 3 \cdot 10^{16}\; n/cm^2$ and to proton fluences up to $φ_p \sim 9\cdot10^{15}\; p/cm^2$ to test their radiation resistance. The experimental results show that Gallium-doped LGADs are more heavily affected by initial acceptor removal than Boron-doped LGAD, while the presence of Carbon reduces initial acceptor removal both for Gallium and Boron do**. Boron low-diffusion shows a higher radiation resistance than that of standard Boron implant, indicating a dependence of the initial acceptor removal mechanism upon the implant width. This study also demonstrates that proton irradiation is at least twice more effective in producing initial acceptor removal, making proton irradiation far more damaging than neutron irradiation.
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Submitted 31 August, 2018; v1 submitted 5 February, 2018;
originally announced February 2018.
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Role of microstructure in porous silicon gas sensors for NO$_2$
Authors:
Zeno Gaburro,
Paolo Bettotti,
Massimo Saiani,
Lorenzo Pavesi,
Lucio Pancheri,
Claudio J. Oton,
Nestor Capuj
Abstract:
Electrical conductivity of porous silicon fabricated form heavily doped p-type silicon is very sensitive to NO$_2$, even at concentrations below 100 ppb. However, sensitivity strongly depends on the porous microstructure. The structural difference between sensitive and insensitive samples is independently confirmed by microscopy images and by light scattering behavior. A way to change the struct…
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Electrical conductivity of porous silicon fabricated form heavily doped p-type silicon is very sensitive to NO$_2$, even at concentrations below 100 ppb. However, sensitivity strongly depends on the porous microstructure. The structural difference between sensitive and insensitive samples is independently confirmed by microscopy images and by light scattering behavior. A way to change the structure is by modifying the composition of the electrochemical solution. We have found that best results are achieved using ethanoic solutions with HF concentration levels between 13% and 15%.
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Submitted 12 November, 2003;
originally announced November 2003.
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Opposite effects of NO$_2$ on electrical injection in porous silicon gas sensors
Authors:
Zeno Gaburro,
Claudio J. Oton,
Lorenzo Pavesi,
Lucio Pancheri
Abstract:
The electrical conductance of porous silicon fabricated with heavily doped p-type silicon is very sensitive to NO$_2$. A concentration of 10 ppb can be detected by monitoring the current injection at fixed voltage. However, we show that the sign of the injection variations depends on the porous layer thickness. If the thickness is sufficiently low -- of the order of few \micro\meter{} -- the inj…
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The electrical conductance of porous silicon fabricated with heavily doped p-type silicon is very sensitive to NO$_2$. A concentration of 10 ppb can be detected by monitoring the current injection at fixed voltage. However, we show that the sign of the injection variations depends on the porous layer thickness. If the thickness is sufficiently low -- of the order of few \micro\meter{} -- the injection decreases instead of increasing. We discuss the effect in terms of an already proposed twofold action of NO$_2$, according to which the free carrier density increases, and simultaneously the energy bands are bent at the porous silicon surface.
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Submitted 12 November, 2003;
originally announced November 2003.
