Showing 1–11 of 11 results for author: Pan, X Q

An efficient and reliable growth method for epitaxial complex oxide films by molecular beam epitaxy

Authors: T. W. Zhang, Z. W. Mao, Z. B. Gu, Y. F. Nie, X. Q. Pan

Abstract: Transition metal oxide heterostructures and interfaces host a variety of exciting quantum phases and can be grown with atomic-scale precision by utilising the intensity oscillations of $in$ $situ$ reflection high-energy electron diffraction (RHEED). However, establishing a stable oscillation pattern in the growth calibration of complex oxides films is very challenging and time consuming. Here, we… ▽ More Transition metal oxide heterostructures and interfaces host a variety of exciting quantum phases and can be grown with atomic-scale precision by utilising the intensity oscillations of $in$ $situ$ reflection high-energy electron diffraction (RHEED). However, establishing a stable oscillation pattern in the growth calibration of complex oxides films is very challenging and time consuming. Here, we develop a substantially more efficient and reliable growth calibration method for complex oxide films using molecular beam epitaxy. △ Less

Submitted 19 June, 2017; originally announced June 2017.

Comments: 4 pages, 3 figures

Artificially engineered superlattices of pnictide superconductor

Authors: S. Lee, C. Tarantini, P. Gao, J. Jiang, J. D. Weiss, F. Kametani, C. M. Folkman, Y. Zhang, X. Q. Pan, E. E. Hellstrom, D. C. Larbalestier, C. B. Eom

Abstract: Significant progress has been achieved in fabricating high quality bulk and thinfilm iron-based superconductors. In particular, artificial layered pnictide superlattices offer the possibility of tailoring the superconducting properties and understanding the mechanism of the superconductivity itself. For high field applications, large critical current densities (Jc) and irreversibility fields (Hirr… ▽ More Significant progress has been achieved in fabricating high quality bulk and thinfilm iron-based superconductors. In particular, artificial layered pnictide superlattices offer the possibility of tailoring the superconducting properties and understanding the mechanism of the superconductivity itself. For high field applications, large critical current densities (Jc) and irreversibility fields (Hirr) are indispensable along all crystal directions. On the other hand, the development of superconducting devices such as tunnel junctions requires multilayered heterostructures. Here we show that artificially engineered undoped Ba-122 / Co doped Ba-122 compositionally modulated superlattices produce ab-aligned nanoparticle arrays. These layer and self-assemble along c-axis aligned defects, and combine to produce very large Jc and Hirr enhancements over a wide angular range. We also demonstrate a structurally modulated SrTiO3 (STO) / Co doped Ba-122 superlattice with sharp interfaces. Success in superlattice fabrication involving pnictides will aid the progress of heterostructured systems exhibiting novel interfacial phenomena and device applications. △ Less

Submitted 12 July, 2013; originally announced July 2013.

Comments: 13 pages, 5 figures & supplementary information

Journal ref: Nature Materials 12, 392_396 (2013)

Tailoring a two-dimensional electron gas at the LaAlO3/SrTiO3 (001) interface by epitaxial strain

Authors: C. W. Bark, D. A. Felker, Y. Wang, Y. Zhang, H. W. Jang, C. M. Folkman, J. W. Park, S. H. Baek, X. Q. Pan, E. Y. Tsymbal, M. S. Rzchowski, C. B. Eom

Abstract: Recently a metallic state was discovered at the interface between insulating oxides, most notably LaAlO3 and SrTiO3. Properties of this two-dimensional electron gas (2DEG) have attracted significant interest due to its potential applications in nanoelectronics. Control over this carrier density and mobility of the 2DEG is essential for applications of these novel systems, and may be achieved by ep… ▽ More Recently a metallic state was discovered at the interface between insulating oxides, most notably LaAlO3 and SrTiO3. Properties of this two-dimensional electron gas (2DEG) have attracted significant interest due to its potential applications in nanoelectronics. Control over this carrier density and mobility of the 2DEG is essential for applications of these novel systems, and may be achieved by epitaxial strain. However, despite the rich nature of strain effects on oxide materials properties, such as ferroelectricity, magnetism, and superconductivity, the relationship between the strain and electrical properties of the 2DEG at the LaAlO3/SrTiO3 heterointerface remains largely unexplored. Here, we use different lattice constant single crystal substrates to produce LaAlO3/SrTiO3 interfaces with controlled levels of biaxial epitaxial strain. We have found that tensile strained SrTiO3 destroys the conducting 2DEG, while compressively strained SrTiO3 retains the 2DEG, but with a carrier concentration reduced in comparison to the unstrained LaAlO3/SrTiO3 interface. We have also found that the critical LaAlO3 overlayer thickness for 2DEG formation increases with SrTiO3 compressive strain. Our first-principles calculations suggest that a strain-induced electric polarization in the SrTiO3 layer is responsible for this behavior. It is directed away from the interface and hence creates a negative polarization charge opposing that of the polar LaAlO3 layer. This both increases the critical thickness of the LaAlO3 layer, and reduces carrier concentration above the critical thickness, in agreement with our experimental results. Our findings suggest that epitaxial strain can be used to tailor 2DEGs properties of the LaAlO3/SrTiO3 heterointerface. △ Less

Submitted 17 November, 2010; originally announced November 2010.

Strong vortex pinning in Co-doped BaFe2As2 single crystal thin films

Authors: C. Tarantini, S. Lee, Y. Zhang, J. Jiang, C. W. Bark, J. D. Weiss, A. Polyanskii, C. T. Nelson, H. W. Jang, C. M. Folkman, S. H. Baek, X. Q. Pan, A. Gurevich, E. E. Hellstrom, C. B. Eom, D. C. Larbalestier

Abstract: We report measurements of the field and angular dependences of Jc of truly epitaxial Co-doped BaFe2As2 thin films grown on SrTiO3/(La,Sr)(Al,Ta)O3 with different SrTiO3 template thicknesses. The films show Jc comparable to Jc of single crystals and a maximum pinning force Fp(0.6Tc) > 5 GN/m3 at H/Hirr ~ 0.5 indicative of strong vortex pinning effective up to high fields. Due to the strong correl… ▽ More We report measurements of the field and angular dependences of Jc of truly epitaxial Co-doped BaFe2As2 thin films grown on SrTiO3/(La,Sr)(Al,Ta)O3 with different SrTiO3 template thicknesses. The films show Jc comparable to Jc of single crystals and a maximum pinning force Fp(0.6Tc) > 5 GN/m3 at H/Hirr ~ 0.5 indicative of strong vortex pinning effective up to high fields. Due to the strong correlated c-axis pinning, Jc for field along the c-axis exceeds Jc for H//ab plane, inverting the expectation of the Hc2 anisotropy. HRTEM reveals that the strong vortex pinning is due to a high density of nanosize columnar defects. △ Less

Submitted 27 February, 2010; originally announced March 2010.

Comments: 10 pages, 6 figures

Journal ref: Appl. Phys. Lett. 96, 142510 (2010)

Template engineering of Co-doped BaFe2As2 single-crystal thin films

Authors: S. Lee, J. Jiang, C. T. Nelson, C. W. Bark, J. D. Weiss, C. Tarantini, H. W. Jang, C. M. Folkman, S. H. Baek, A. Polyanskii, D. Abraimov, A. Yamamoto, Y. Zhang, X. Q. Pan, E. E. Hellstrom, D. C. Larbalestier, C. B. Eom

Abstract: Understanding new superconductors requires high-quality epitaxial thin films to explore intrinsic electromagnetic properties, control grain boundaries and strain effects, and evaluate device applications. So far superconducting properties of ferropnictide thin films appear compromised by imperfect epitaxial growth and poor connectivity of the superconducting phase. Here we report novel template… ▽ More Understanding new superconductors requires high-quality epitaxial thin films to explore intrinsic electromagnetic properties, control grain boundaries and strain effects, and evaluate device applications. So far superconducting properties of ferropnictide thin films appear compromised by imperfect epitaxial growth and poor connectivity of the superconducting phase. Here we report novel template engineering using single-crystal intermediate layers of (001) SrTiO3 and BaTiO3 grown on various perovskite substrates that enables genuine epitaxial films of Co-doped BaFe2As2 with high transition temperature (zero resistivity Tc of 21.5K), small transition widths (delta Tc = 1.3K), superior Jc of 4.5 MA/cm2 (4.2K, self field) and strong c-axis flux pinning. Implementing SrTiO3 or BaTiO3 templates to match the alkaline earth layer in the Ba-122 with the alkaline earth-oxygen layer in the templates opens new avenues for epitaxial growth of ferropnictides on multi-functional single crystal substrates. Beyond superconductors, it provides a framework for growing heteroepitaxial intermetallic compounds on various substrates by matching interfacial layers between templates and thin film overlayers. △ Less

Submitted 1 October, 2009; originally announced October 2009.

Journal ref: Nature Materials, 9, 397-402 (2010)

Weak-link behavior of grain boundaries in superconducting Ba(Fe1-xCox)2As2 bicrystals

Authors: S. Lee, J. Jiang, J. D. Weiss, C. M. Folkman, C. W. Bark, C. Tarantini, A. Xu, D. Abraimov, A. Polyanskii, C. T. Nelson, Y. Zhang, S. H. Baek, H. W. Jang, A. Yamamoto, F. Kametani, X. Q. Pan, E. E. Hellstrom, A. Gurevich, C. B. Eom, D. C. Larbalestier

Abstract: We show that despite the low anisotropy, strong vortex pinning and high irreversibility field Hirr close to the upper critical field Hc2 of Ba(Fe1-xCox)2As2, the critical current density Jgb across [001] tilt grain boundaries (GBs) of thin film Ba(Fe1-xCox)2As2 bicrystals is strongly depressed, similar to high-Tc cuprates. Our results suggest that weak-linked GBs are characteristic of both cupra… ▽ More We show that despite the low anisotropy, strong vortex pinning and high irreversibility field Hirr close to the upper critical field Hc2 of Ba(Fe1-xCox)2As2, the critical current density Jgb across [001] tilt grain boundaries (GBs) of thin film Ba(Fe1-xCox)2As2 bicrystals is strongly depressed, similar to high-Tc cuprates. Our results suggest that weak-linked GBs are characteristic of both cuprates and pnictides because of competing orders, low carrier density, and unconventional pairing symmetry. △ Less

Submitted 16 November, 2009; v1 submitted 21 July, 2009; originally announced July 2009.

Comments: To appear in Applied Physics Letters

Journal ref: Appl. Phys. Lett. 95, 212505 (2009)

Interplay between grain boundary grooving, stress, and dealloying in the agglomeration of NiSi1-xGex films

Authors: H. B. Yao, M. Bouville, D. Z. Chi, H. P. Sun, X. Q. Pan, D. J. Srolovitz, D. Mangelinck

Abstract: Germanosilicides, especially those formed on compressive substrates, are less stable than silicides against agglomeration. By studying the solid-state reaction of Ni thin film on strained Si0.8Ge0.2(001), we show that nickel germanosilicide is different from nickel silicide and nickel germanide in several respects: the grains are smaller and faceted, the groove angle is sharper, and dealloying t… ▽ More Germanosilicides, especially those formed on compressive substrates, are less stable than silicides against agglomeration. By studying the solid-state reaction of Ni thin film on strained Si0.8Ge0.2(001), we show that nickel germanosilicide is different from nickel silicide and nickel germanide in several respects: the grains are smaller and faceted, the groove angle is sharper, and dealloying takes place. The germanium out-diffusion creates a stress in the film which favors grooving and agglomeration. △ Less

Submitted 18 May, 2006; originally announced May 2006.

Comments: 13 pages, 4 figures

Journal ref: Electrochem. Solid-State Lett., Volume 10, Issue 2, pp. H53-H55 (2007)

Very high upper critical fields in MgB2 produced by selective tuning of impurity scattering

Authors: A. Gurevich, S. Patnaik, V. Braccini, K. H. Kim, C. Mielke, X. Song, L. D. Cooley, S. D. Bu, D. M. Kim, J. H. Choi, L. J. Belenky, J. Giencke, M. K. Lee, W. Tian, X. Q. Pan, A. Siri, E. E. Hellstrom, C. B. Eom, D. C. Larbalestier

Abstract: We report a significant enhancement of the upper critical field $H_{c2}$ of different $MgB_2$ samples alloyed with nonmagnetic impurities. By studying films and bulk polycrystals with different resistivities $ρ$, we show a clear trend of $H_{c2}$ increase as $ρ$ increases. One particular high resistivity film had zero-temperature $H_{c2}(0)$ well above the $H_{c2}$ values of competing non-cuprat… ▽ More We report a significant enhancement of the upper critical field $H_{c2}$ of different $MgB_2$ samples alloyed with nonmagnetic impurities. By studying films and bulk polycrystals with different resistivities $ρ$, we show a clear trend of $H_{c2}$ increase as $ρ$ increases. One particular high resistivity film had zero-temperature $H_{c2}(0)$ well above the $H_{c2}$ values of competing non-cuprate superconductors such as $Nb_3Sn$ and Nb-Ti. Our high-field transport measurements give record values $H_{c2}^\perp (0) \approx 34T$ and $H_{c2}\|(0) \approx 49 T$ for high resistivity films and $H_{c2}(0)\approx 29 T$ for untextured bulk polycrystals. The highest $H_{c2}$ film also exhibits a significant upward curvature of $H_{c2}(T)$, and temperature dependence of the anisotropy parameter $γ(T) = H_{c2}\|/ H_{c2}^\perp$ opposite to that of single crystals: $γ(T)$ decreases as the temperature decreases, from $γ(T_c) \approx 2$ to $γ(0) \approx 1.5$. This remarkable $H_{c2}$ enhancement and its anomalous temperature dependence are a consequence of the two-gap superconductivity in $MgB_2$, which offers special opportunities for further $H_{c2}$ increase by tuning of the impurity scattering by selective alloying on Mg and B sites. Our experimental results can be explained by a theory of two-gap superconductivity in the dirty limit. The very high values of $H_{c2}(T)$ observed suggest that $MgB_2$ can be made into a versatile, competitive high-field superconductor. △ Less

Submitted 17 September, 2003; v1 submitted 20 May, 2003; originally announced May 2003.

Comments: An updated version of the paper (12/12/2002)that was placed on cond-mat on May 7 2003

CVD-based approach to the growth of epitaxial MgB2 thin films

Authors: A. V. Pogrebnyakov, X. H. Zheng, A. Kotcharov, J. E. Jones, X. X. Xi, E. M. Lysczek, J. Redwing, S. Y. Xu, Q. Li, J. Lettiery, D. G. Schlom, J. Schallenberger, Z. K. Liu, W. Tian, X. Q. Pan

Abstract: The paper has been withdrawn The paper has been withdrawn △ Less

Submitted 9 April, 2002; v1 submitted 6 April, 2002; originally announced April 2002.

Comments: 14 pages, 5 figures

In situ epitaxial MgB2 thin films for superconducting electronics

Authors: X. H. Zeng, A. V. Pogrebnyakov, A. Kotcharov, J. E. Jones, X. X. Xi, E. M. Lysczek, J. M. Redwing, S. Y. Xu, Qi Li, J. Lettieri, D. G. Schlom, W. Tian, X. Q. Pan, Z. K. Liu

Abstract: A thin film technology compatible with multilayer device fabrication is critical for exploring the potential of the 39-K superconductor magnesium diboride for superconducting electronics. Using a Hybrid Physical-Chemical Vapor Deposition (HPCVD) process, it is shown that the high Mg vapor pressure necessary to keep the MgB$_2$ phase thermodynamically stable can be achieved for the {\it in situ}… ▽ More A thin film technology compatible with multilayer device fabrication is critical for exploring the potential of the 39-K superconductor magnesium diboride for superconducting electronics. Using a Hybrid Physical-Chemical Vapor Deposition (HPCVD) process, it is shown that the high Mg vapor pressure necessary to keep the MgB$_2$ phase thermodynamically stable can be achieved for the {\it in situ} growth of MgB$_2$ thin films. The films grow epitaxially on (0001) sapphire and (0001) 4H-SiC substrates and show a bulk-like $T_c$ of 39 K, a $J_c$(4.2K) of $1.2 \times 10^7$ A/cm$^2$ in zero field, and a $H_{c2}(0)$ of 29.2 T in parallel magnetic field. The surface is smooth with a root-mean-square roughness of 2.5 nm for MgB$_2$ films on SiC. This deposition method opens tremendous opportunities for superconducting electronics using MgB$_2$. △ Less

Submitted 27 March, 2002; originally announced March 2002.

Superconducting properties of nanocrystalline MgB$_2$ thin films made by an in situ annealing process

Authors: X. H. Zeng, A. Sukiasyan, X. X. Xi, Y. F. Hu, E. Wertz, Qi Li, W. Tian, H. P. Sun, X. Q. Pan, J. Lettieri, D. G. Schlom, C. O. Brubaker, Zi-Kui Liu, Qiang Li

Abstract: We have studied the structural and superconducting properties of MgB$_2$ thin films made by pulsed laser deposition followed by in situ annealing. The cross-sectional transmission electron microscopy reveals a nanocrystalline mixture of textured MgO and MgB$_2$ with very small grain sizes. A zero-resistance transition temperature ($T_{c0}$) of 34 K and a zero-field critical current density (… ▽ More We have studied the structural and superconducting properties of MgB$_2$ thin films made by pulsed laser deposition followed by in situ annealing. The cross-sectional transmission electron microscopy reveals a nanocrystalline mixture of textured MgO and MgB$_2$ with very small grain sizes. A zero-resistance transition temperature ($T_{c0}$) of 34 K and a zero-field critical current density ($J_c$) of $1.3 \times 10^6$ A/cm$^2$ were obtained. The irreversibility field was $\sim$ 8 T at low temperatures, although severe pinning instability was observed. These bulk-like superconducting properties show that the in situ deposition process can be a viable candidate for MgB$_2$ Josephson junction technologies. △ Less

Submitted 3 May, 2001; originally announced May 2001.