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Ferroelectric switching of a two-dimensional metal
Authors:
Zaiyao Fei,
Wen** Zhao,
Tauno A. Palomaki,
Bosong Sun,
Moira K. Miller,
Zhiying Zhao,
Jiaqiang Yan,
Xiaodong Xu,
David H. Cobden
Abstract:
A ferroelectric is a material with a polar structure whose polarity can be reversed by applying an electric field. In metals, the itinerant electrons tend to screen electrostatic forces between ions, hel** to explain why polar metals are very rare. Screening also excludes external electric fields, apparently ruling out the possibility of polarity reversal and thus ferroelectric switching. In pri…
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A ferroelectric is a material with a polar structure whose polarity can be reversed by applying an electric field. In metals, the itinerant electrons tend to screen electrostatic forces between ions, hel** to explain why polar metals are very rare. Screening also excludes external electric fields, apparently ruling out the possibility of polarity reversal and thus ferroelectric switching. In principle, however, a thin enough polar metal could be penetrated by an electric field sufficiently to be switched. Here we show that the layered topological semimetal WTe2 provides the first embodiment of this principle. Although monolayer WTe2 is centrosymmetric and thus nonpolar, the stacked bulk structure is polar. We find that two- or three-layer WTe2 exhibits a spontaneous out-of-plane electric polarization which can be switched using gate electrodes. We directly detect and quantify the polarization using graphene as an electric field sensor. Moreover, the polarization states can be differentiated by conductivity, and the carrier density can be varied to modify the properties. The critical temperature is above 350 K, and even when WTe2 is sandwiched in graphene it retains its switching capability at room temperature, demonstrating a robustness suitable for applications in combination with other two-dimensional materials.
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Submitted 12 September, 2018;
originally announced September 2018.
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State Transfer Between a Mechanical Oscillator and Microwave Fields in the Quantum Regime
Authors:
T. A. Palomaki,
J. W. Harlow,
J. D. Teufel,
R. W. Simmonds,
K. W. Lehnert
Abstract:
Recently, macroscopic mechanical oscillators have been coaxed into a regime of quantum behavior, by direct refrigeration [1] or a combination of refrigeration and laser-like cooling [2, 3]. This exciting result has encouraged notions that mechanical oscillators may perform useful functions in the processing of quantum information with superconducting circuits [1, 4-7], either by serving as a quant…
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Recently, macroscopic mechanical oscillators have been coaxed into a regime of quantum behavior, by direct refrigeration [1] or a combination of refrigeration and laser-like cooling [2, 3]. This exciting result has encouraged notions that mechanical oscillators may perform useful functions in the processing of quantum information with superconducting circuits [1, 4-7], either by serving as a quantum memory for the ephemeral state of a microwave field or by providing a quantum interface between otherwise incompatible systems [8, 9]. As yet, the transfer of an itinerant state or propagating mode of a microwave field to and from a mechanical oscillator has not been demonstrated owing to the inability to agilely turn on and off the interaction between microwave electricity and mechanical motion. Here we demonstrate that the state of an itinerant microwave field can be coherently transferred into, stored in, and retrieved from a mechanical oscillator with amplitudes at the single quanta level. Crucially, the time to capture and to retrieve the microwave state is shorter than the quantum state lifetime of the mechanical oscillator. In this quantum regime, the mechanical oscillator can both store and transduce quantum information.
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Submitted 24 June, 2012;
originally announced June 2012.
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Multi-level Spectroscopy of Two-Level Systems Coupled to a dc SQUID Phase Qubit
Authors:
T. A. Palomaki,
S. K. Dutta,
R. M. Lewis,
A. J. Przybysz,
Hanhee Paik,
B. K. Cooper,
H. Kwon,
J. R. Anderson,
C. J. Lobb,
E. Tiesinga,
F. C. Wellstood
Abstract:
We report spectroscopic measurements of discrete two-level systems (TLSs) coupled to a dc SQUID phase qubit with a 16 μ\m2 area Al/AlOx/Al junction. Applying microwaves in the 10 GHz to 11 GHz range, we found eight avoided level crossings with splitting sizes from 10 MHz to 200 MHz and spectroscopic lifetimes from 4 ns to 160 ns. Assuming the transitions are from the ground state of the composite…
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We report spectroscopic measurements of discrete two-level systems (TLSs) coupled to a dc SQUID phase qubit with a 16 μ\m2 area Al/AlOx/Al junction. Applying microwaves in the 10 GHz to 11 GHz range, we found eight avoided level crossings with splitting sizes from 10 MHz to 200 MHz and spectroscopic lifetimes from 4 ns to 160 ns. Assuming the transitions are from the ground state of the composite system to an excited state of the qubit or an excited state of one of the TLS states, we fit the location and spectral width to get the energy levels, splitting sizes and spectroscopic coherence times of the phase qubit and TLSs. The distribution of splittings is consistent with non-interacting individual charged ions tunneling between random locations in the tunnel barrier and the distribution of lifetimes is consistent with the AlOx in the junction barrier having a frequency-independent loss tangent. To check that the charge of each TLS couples independently to the voltage across the junction, we also measured the spectrum in the 20-22 GHz range and found tilted avoided level crossings due to the second excited state of the junction and states in which both the junction and a TLS were excited.
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Submitted 20 March, 2010;
originally announced March 2010.
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Multilevel effects in the Rabi oscillations of a Josephson phase qubit
Authors:
S. K. Dutta,
Frederick W. Strauch,
R. M. Lewis,
Kaushik Mitra,
Hanhee Paik,
T. A. Palomaki,
Eite Tiesinga,
J. R. Anderson,
Alex J. Dragt,
C. J. Lobb,
F. C. Wellstood
Abstract:
We present Rabi oscillation measurements of a Nb/AlOx/Nb dc superconducting quantum interference device (SQUID) phase qubit with a 100 um^2 area junction acquired over a range of microwave drive power and frequency detuning. Given the slightly anharmonic level structure of the device, several excited states play an important role in the qubit dynamics, particularly at high power. To investigate…
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We present Rabi oscillation measurements of a Nb/AlOx/Nb dc superconducting quantum interference device (SQUID) phase qubit with a 100 um^2 area junction acquired over a range of microwave drive power and frequency detuning. Given the slightly anharmonic level structure of the device, several excited states play an important role in the qubit dynamics, particularly at high power. To investigate the effects of these levels, multiphoton Rabi oscillations were monitored by measuring the tunneling escape rate of the device to the voltage state, which is particularly sensitive to excited state population. We compare the observed oscillation frequencies with a simplified model constructed from the full phase qubit Hamiltonian and also compare time-dependent escape rate measurements with a more complete density-matrix simulation. Good quantitative agreement is found between the data and simulations, allowing us to identify a shift in resonance (analogous to the ac Stark effect), a suppression of the Rabi frequency, and leakage to the higher excited states.
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Submitted 5 December, 2009; v1 submitted 28 June, 2008;
originally announced June 2008.
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Decoherence in dc SQUID phase qubits
Authors:
Hanhee Paik,
S. K. Dutta,
R. M. Lewis,
T. A. Palomaki,
B. K. Cooper,
R. C. Ramos,
H. Xu,
A. J. Dragt,
J. R. Anderson,
C. J. Lobb,
F. C. Wellstood
Abstract:
We report measurements of Rabi oscillations and spectroscopic coherence times in an Al/AlOx/Al and three Nb/AlOx/Nb dc SQUID phase qubits. One junction of the SQUID acts as a phase qubit and the other junction acts as a current-controlled nonlinear isolating inductor, allowing us to change the coupling to the current bias leads in situ by an order of magnitude. We found that for the Al qubit a s…
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We report measurements of Rabi oscillations and spectroscopic coherence times in an Al/AlOx/Al and three Nb/AlOx/Nb dc SQUID phase qubits. One junction of the SQUID acts as a phase qubit and the other junction acts as a current-controlled nonlinear isolating inductor, allowing us to change the coupling to the current bias leads in situ by an order of magnitude. We found that for the Al qubit a spectroscopic coherence time T2* varied from 3 to 7 ns and the decay envelope of Rabi oscillations had a time constant T' = 25 ns on average at 80 mK. The three Nb devices also showed T2* in the range of 4 to 6 ns, but T' was 9 to 15 ns, just about 1/2 the value we found in the Al device. For all the devices, the time constants were roughly independent of the isolation from the bias lines, implying that noise and dissipation from the bias leads were not the principal sources of dephasing and inhomogeneous broadening.
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Submitted 28 April, 2008;
originally announced April 2008.
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Comparison of coherence times in three dc SQUID phase qubits
Authors:
Hanhee Paik,
B. K. Cooper,
S. K. Dutta,
R. M. Lewis,
R. C. Ramos,
T. A. Palomaki,
A. J. Przybysz,
A. J. Dragt,
J. R. Anderson,
C. J. Lobb,
F. C. Wellstood
Abstract:
We report measurements of spectroscopic linewidth and Rabi oscillations in three thin-film dc SQUID phase qubits. One device had a single-turn Al loop, the second had a 6-turn Nb loop, and the third was a first order gradiometer formed from 6-turn wound and counter-wound Nb coils to provide isolation from spatially uniform flux noise. In the 6 - 7.2 GHz range, the spectroscopic coherence times f…
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We report measurements of spectroscopic linewidth and Rabi oscillations in three thin-film dc SQUID phase qubits. One device had a single-turn Al loop, the second had a 6-turn Nb loop, and the third was a first order gradiometer formed from 6-turn wound and counter-wound Nb coils to provide isolation from spatially uniform flux noise. In the 6 - 7.2 GHz range, the spectroscopic coherence times for the gradiometer varied from 4 ns to 8 ns, about the same as for the other devices (4 to 10 ns). The time constant for decay of Rabi oscillations was significantly longer in the single-turn Al device (20 to 30 ns) than either of the Nb devices (10 to 15 ns). These results imply that spatially uniform flux noise is not the main source of decoherence or inhomogenous broadening in these devices.
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Submitted 31 May, 2007; v1 submitted 31 May, 2007;
originally announced May 2007.
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Strong-field effects in the Rabi oscillations of the superconducting phase qubit
Authors:
F. W. Strauch,
S. K. Dutta,
Hanhee Paik,
T. A. Palomaki,
K. Mitra,
B. K. Cooper,
R. M. Lewis,
J. R. Anderson,
A. J. Dragt,
C. J. Lobb,
F. C. Wellstood
Abstract:
Rabi oscillations have been observed in many superconducting devices, and represent prototypical logic operations for quantum bits (qubits) in a quantum computer. We use a three-level multiphoton analysis to understand the behavior of the superconducting phase qubit (current-biased Josephson junction) at high microwave drive power. Analytical and numerical results for the ac Stark shift, single-…
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Rabi oscillations have been observed in many superconducting devices, and represent prototypical logic operations for quantum bits (qubits) in a quantum computer. We use a three-level multiphoton analysis to understand the behavior of the superconducting phase qubit (current-biased Josephson junction) at high microwave drive power. Analytical and numerical results for the ac Stark shift, single-photon Rabi frequency, and two-photon Rabi frequency are compared to measurements made on a dc SQUID phase qubit with Nb/AlOx/Nb tunnel junctions. Good agreement is found between theory and experiment.
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Submitted 2 March, 2007;
originally announced March 2007.
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Fast High-Fidelity Measurements of the Ground and Excited States of a dc-SQUID Phase Qubit
Authors:
T. A. Palomaki,
S. K. Dutta,
R. M. Lewis,
Hanhee Paik,
K. Mitra,
B. K. Cooper,
A. J. Przybysz,
A. J. Dragt,
J. R. Anderson,
C. J. Lobb,
F. C. Wellstood
Abstract:
We have investigated the fidelity and speed of single-shot current-pulse measurements of the three lowest energy states of the dc SQUID phase qubit. We apply a short (2ns) current pulse to one junction of a Nb/AlOx/Nb SQUID that is in the zero voltage state at 25 mK and measure if the system switches to the finite voltage state. By plotting the switching rate versus pulse size we can determine a…
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We have investigated the fidelity and speed of single-shot current-pulse measurements of the three lowest energy states of the dc SQUID phase qubit. We apply a short (2ns) current pulse to one junction of a Nb/AlOx/Nb SQUID that is in the zero voltage state at 25 mK and measure if the system switches to the finite voltage state. By plotting the switching rate versus pulse size we can determine average occupancy of the levels down to 0.01%, quantify small levels of leakage, and find the optimum pulse condition for single-shot measurements. Our best error rate is 3% with a measurement fidelity of 94%. By monitoring the escape rate during the pulse, the pulse current in the junction can be found to better than 10 nA on a 0.1 ns time scale. Theoretical analysis of the system reveals switching curves that are in good agreement with the data, as well as predictions that the ultimate single-shot error rate for this technique can reach 0.4% and the fidelity 99.2%.
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Submitted 17 August, 2006;
originally announced August 2006.