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Straightforward Bias and Frequency Dependent Small-Signal Model Extraction for Single-Layer Graphene FETs
Authors:
Nikolaos Mavredakis,
Anibal Pacheco-Sanchez,
Wei Wei,
Emiliano Pallecchi,
Henri Happy,
David Jiménez
Abstract:
We propose an explicit small-signal graphene field-effect transistor (GFET) parameter extraction procedure based on a charge-based quasi-static model. The dependence of the small-signal parameters on both gate voltage and frequency is precisely validated by high-frequency (up to 18 GHz) on-wafer measurements from a 300 nm device. These parameters are studied simultaneously, in contrast to other wo…
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We propose an explicit small-signal graphene field-effect transistor (GFET) parameter extraction procedure based on a charge-based quasi-static model. The dependence of the small-signal parameters on both gate voltage and frequency is precisely validated by high-frequency (up to 18 GHz) on-wafer measurements from a 300 nm device. These parameters are studied simultaneously, in contrast to other works which focus exclusively on few. Efficient procedures have been applied to GFETs for the first time to remove contact and gate resistances from the Y-parameters. The use of these methods yields straightforward equations for extracting the small-signal model parameters, which is extremely useful for radio-frequency circuit design. Furthermore, we show for the first time experimental validation vs. both gate voltage and frequency of the intrinsic GFET non-reciprocal capacitance model. Accurate models are also presented for the gate voltage-dependence of the measured unity-gain and maximum oscillation frequencies as well as of the current and power gains.
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Submitted 9 February, 2023;
originally announced February 2023.
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Bias-dependent intrinsic RF thermal noise modeling and characterization of single layer graphene FETs
Authors:
Nikolaos Mavredakis,
Anibal Pacheco-Sanchez,
Paulius Sakalas,
Wei Wei,
Emiliano Pallecchi,
Henri Happy,
David Jimenez
Abstract:
In this article, the bias-dependence of intrinsic channel thermal noise of single-layer graphene field-effect transistors (GFETs) is thoroughly investigated by experimental observations and compact modeling. The findings indicate an increase of the specific noise as drain current increases whereas a saturation trend is observed at very high carrier density regime. Besides, short-channel effects li…
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In this article, the bias-dependence of intrinsic channel thermal noise of single-layer graphene field-effect transistors (GFETs) is thoroughly investigated by experimental observations and compact modeling. The findings indicate an increase of the specific noise as drain current increases whereas a saturation trend is observed at very high carrier density regime. Besides, short-channel effects like velocity saturation also result in an increment of noise at higher electric fields. The main goal of this work is to propose a physics-based compact model that accounts for and accurately predicts the above experimental observations in short-channel GFETs. In contrast to long-channel MOSFET based models adopted previously to describe thermal noise in graphene devices without considering the degenerate nature of graphene, in this work a model for short-channel GFETs embracing the 2D materials underlying physics and including a bias dependency is presented. The implemented model is validated with de-embedded high frequency data from two short-channel devices at Quasi-Static region of operation. The model precisely describes the experimental data for a wide range of low to high drain current values without the need of any fitting parameter. Moreover, the consideration of the degenerate nature of graphene reveals a significant decrease of noise in comparison with the non degenerate case and the model accurately captures this behavior. This work can also be of outmost significance from circuit designers aspect, since noise excess factor, a very important figure of merit for RF circuits implementation, is defined and characterized for the first time in graphene transistors.
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Submitted 16 June, 2021; v1 submitted 23 April, 2021;
originally announced April 2021.
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Experimental observation and modeling of the impact of traps on static and analog/HF performance of graphene transistors
Authors:
Anibal Pacheco-Sanchez,
Nikolaos Mavredakis,
Pedro C. Feijoo,
Wei Wei,
Emiliano Pallecchi,
Henri Happy,
David Jiménez
Abstract:
The trap-induced hysteresis on the performance of a graphene field-effect transistor is experimentally diminished here by applying consecutive gate-to-source voltage pulses of opposing polarity. This measurement scheme is a practical and suitable approach to obtain reproducible device characteristics. Trap-affected and trap-free experimental data enable a discussion regarding the impact of traps o…
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The trap-induced hysteresis on the performance of a graphene field-effect transistor is experimentally diminished here by applying consecutive gate-to-source voltage pulses of opposing polarity. This measurement scheme is a practical and suitable approach to obtain reproducible device characteristics. Trap-affected and trap-free experimental data enable a discussion regarding the impact of traps on static and dynamic device performance. An analytical drain current model calibrated with the experimental data enables the study of the traps effects on the channel potential within the device. High-frequency figures of merit and the intrinsic gain of the device obtained from both experimental and synthetic data with and without hysteresis show the importance of considering the generally overlooked impact of traps for analog and high-frequency applications.
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Submitted 28 October, 2020; v1 submitted 29 June, 2020;
originally announced June 2020.
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Low-frequency noise parameter extraction method for single layer graphene FETs
Authors:
Nikolaos Mavredakis,
Wei Wei,
Emiliano Pallecchi,
Dominique Vignaud,
Henri Happy,
Ramon Garcia Cortadella,
Nathan Schaefer,
Andrea Bonaccini Calia,
Jose Antonio Garrido,
David Jimenez
Abstract:
In this paper, a detailed parameter extraction methodology is proposed for low-frequency noise (LFN) in single layer (SL) graphene transistors (GFETs) based on a recently established compact LFN model. Drain current and LFN of two short channel back-gated GFETs (L=300, 100 nm) were measured at lower and higher drain voltages, for a wide range of gate voltages covering the region away from charge n…
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In this paper, a detailed parameter extraction methodology is proposed for low-frequency noise (LFN) in single layer (SL) graphene transistors (GFETs) based on a recently established compact LFN model. Drain current and LFN of two short channel back-gated GFETs (L=300, 100 nm) were measured at lower and higher drain voltages, for a wide range of gate voltages covering the region away from charge neutrality point (CNP) up to CNP at p-type operation region. Current-voltage (IV) and LFN data were also available from a long channel SL top solution-gated (SG) GFET (L=5 um), for both p- and n-type regions near and away CNP. At each of these regimes, the appropriate IV and LFN parameters can be accurately extracted. Regarding LFN, mobility fluctuation effect is dominant at CNP and from there the Hooge parameter aH can be extracted while the carrier number fluctuation contribution which is responsible for the well-known M-shape bias dependence of output noise divided by squared drain current, also observed in our data, makes possible the extraction of the NT parameter related to the number of traps. In the less possible case of a Lambda-shape trend, NT and aH can be extracted simultaneously from the region near CNP. Away from CNP, contact resistance can have a significant contribution to LFN and from there the relevant parameter SDR^2 is defined. The LFN parameters described above can be estimated from the low drain voltage region of operation where the effect of Velocity Saturation (VS) mechanism is negligible. VS effect results in the reduction of LFN at higher drain voltages and from there the IV parameter hOmega which represents the phonon energy and is related to VS effect can be derived both from drain current and LFN data.
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Submitted 1 May, 2020; v1 submitted 5 February, 2020;
originally announced February 2020.
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Velocity Saturation effect on Low Frequency Noise in short channel Single Layer Graphene FETs
Authors:
Nikolaos Mavredakis,
Wei Wei,
Emiliano Pallecchi,
Dominique Vignaud,
Henri Happy,
Ramon Garcia Cortadella,
Andrea Bonaccini Calia,
Jose A. Garrido,
David Jiménez
Abstract:
Graphene devices for analog and RF applications are prone to Low Frequency Noise (LFN) due to its upconversion to undesired phase noise at higher frequencies. Such applications demand the use of short channel graphene transistors that operate at high electric fields in order to ensure a high speed. Electric field is inversely proportional to device length and proportional to channel potential so i…
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Graphene devices for analog and RF applications are prone to Low Frequency Noise (LFN) due to its upconversion to undesired phase noise at higher frequencies. Such applications demand the use of short channel graphene transistors that operate at high electric fields in order to ensure a high speed. Electric field is inversely proportional to device length and proportional to channel potential so it gets maximized as the drain voltage increases and the transistor length shrinks. Under these conditions though, short channel effects like Velocity Saturation (VS) should be taken into account. Carrier number and mobility fluctuations have been proved to be the main sources that generate LFN in graphene devices. While their contribution to the bias dependence of LFN in long channels has been thoroughly investigated, the way in which VS phenomenon affects LFN in short channel devices under high drain voltage conditions has not been well understood. At low electric field operation, VS effect is negligible since carriers velocity is far away from being saturated. Under these conditions, LFN can be precicely predicted by a recently established physics-based analytical model. The present paper goes a step furher and proposes a new model which deals with the contribution of VS effect on LFN under high electric field conditions. The implemented model is validated with novel experimental data, published for the first time, from CVD grown back-gated single layer graphene transistors operating at gigahertz frequencies. The model accurately captures the reduction of LFN especially near charge neutrality point because of the effect of VS mechanism. Moreover, an analytical expression for the effect of contact resistance on LFN is derived. This contact resistance contribution is experimentally shown to be dominant at higher gate voltages and is accurately described by the proposed model.
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Submitted 27 May, 2019;
originally announced May 2019.
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Optoelectronic mixing with high frequency graphene transistors
Authors:
Alberto Montanaro,
Wei Wei,
Domenico De Fazio,
Ugo Sassi,
Giancarlo Soavi,
Andrea C Ferrari,
Henri Happy,
Pierre Legagneux,
Emiliano Pallecchi
Abstract:
Graphene is ideally suited for optoelectronic applications. It offers absorption at telecom wavelengths, high-frequency operation and CMOS-compatibility. We report optoelectronic mixing up to to 67GHz using a back-gated graphene field effect transistor (GFET). We also present a model to describe the resulting mixed current. These results pave the way for GETs optoelectronic mixers for mm-wave appl…
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Graphene is ideally suited for optoelectronic applications. It offers absorption at telecom wavelengths, high-frequency operation and CMOS-compatibility. We report optoelectronic mixing up to to 67GHz using a back-gated graphene field effect transistor (GFET). We also present a model to describe the resulting mixed current. These results pave the way for GETs optoelectronic mixers for mm-wave applications, such as telecommunications and RADAR/LIDAR systems.
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Submitted 23 May, 2019;
originally announced May 2019.
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Record high bandwidth integrated graphene photodetectors for communication beyond 180 Gb/s
Authors:
Daniel Schall,
Emiliano Pallecchi,
Guillaume Ducournau,
Vanessa Avramovic,
Martin Otto,
Daniel Neumaier
Abstract:
We report on the fastest silicon waveguide integrated photodetectors with a bandwidth larger than 128 GHz for ultrafast optical communication. The photodetectors are based on CVD graphene that is compatible to wafer scale production methods.
We report on the fastest silicon waveguide integrated photodetectors with a bandwidth larger than 128 GHz for ultrafast optical communication. The photodetectors are based on CVD graphene that is compatible to wafer scale production methods.
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Submitted 26 April, 2018;
originally announced April 2018.
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Small-signal model for 2D-material based field-effect transistors targeting radio-frequency applications: the importance of considering non-reciprocal capacitances
Authors:
Francisco Pasadas,
Wei Wei,
Emiliano Pallecchi,
Henri Happy,
David Jiménez
Abstract:
A small-signal equivalent circuit of 2D-material based field-effect transistors is presented. Charge conservation and non-reciprocal capacitances have been assumed so the model can be used to make reliable predictions at both device and circuit levels. In this context, explicit and exact analytical expressions of the main radio-frequency figures of merit of these devices are given. Moreover, a dir…
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A small-signal equivalent circuit of 2D-material based field-effect transistors is presented. Charge conservation and non-reciprocal capacitances have been assumed so the model can be used to make reliable predictions at both device and circuit levels. In this context, explicit and exact analytical expressions of the main radio-frequency figures of merit of these devices are given. Moreover, a direct parameter extraction methodology is provided based on S-parameter measurements. In addition to the intrinsic capacitances, transconductance and output conductance, our approach allows extracting the series combination of drain/source metal contact and access resistances. Accounting for these extrinsic resistances is of upmost importance when dealing with low dimensional field-effect transistors.
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Submitted 8 September, 2017; v1 submitted 1 April, 2017;
originally announced April 2017.
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Disorder-perturbed Landau levels in high electron mobility epitaxial graphene
Authors:
Simon Maëro,
Abderrezak Torche,
Thanyanan Phuphachong,
Emiliano Pallecchi,
Abdelkarim Ouerghi,
Robson Ferreira,
Louis-Anne de Vaulchier,
Yves Guldner
Abstract:
We show that the Landau levels in epitaxial graphene in presence of localized defects are significantly modified compared to those of an ideal system. We report on magneto-spectroscopy experiments performed on high quality samples. Besides typical interband magneto-optical transitions, we clearly observe additional transitions that involve perturbed states associated to short-range impurities such…
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We show that the Landau levels in epitaxial graphene in presence of localized defects are significantly modified compared to those of an ideal system. We report on magneto-spectroscopy experiments performed on high quality samples. Besides typical interband magneto-optical transitions, we clearly observe additional transitions that involve perturbed states associated to short-range impurities such as vacancies. Their intensity is found to decrease with an annealing process and a partial self-healing over time is observed. Calculations of the perturbed Landau levels by using a delta-like potential show electronic states both between and at the same energies of the Laudau levels of ideal graphene. The calculated absorption spectra involving all perturbed and unperturbed states are in very good agreement with the experiments.
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Submitted 16 October, 2014;
originally announced October 2014.
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High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen
Authors:
E. Pallecchi,
F. Lafont,
V. Cavaliere,
F. Schopfer,
D. Mailly,
W. Poirier,
A. Ouerghi
Abstract:
We investigate the magneto-transport properties of epitaxial graphene single-layer on 4H-SiC(0001), grown by atmospheric pressure graphitization in Ar, followed by H2 intercalation. We directly demonstrate the importance of saturating the Si dangling bonds at the graphene/SiC(0001) interface to achieve high carrier mobility. Upon successful Si dangling bonds elimination, carrier mobility increases…
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We investigate the magneto-transport properties of epitaxial graphene single-layer on 4H-SiC(0001), grown by atmospheric pressure graphitization in Ar, followed by H2 intercalation. We directly demonstrate the importance of saturating the Si dangling bonds at the graphene/SiC(0001) interface to achieve high carrier mobility. Upon successful Si dangling bonds elimination, carrier mobility increases from 3 000 cm^2/Vs to > 11 000 cm^2/Vs at 0.3 K. Additionally, graphene electron concentration tends to decrease from a few 10^12 cm^-2 to less than 10^12 cm^-2. For a typical large (30x280 um^2) Hall bar, we report the observation of the integer quantum Hall states at 0.3 K with well developed transversal resistance plateaus at Landau level fillings factors of nu = 2, 6, 10, 14.. 42 and Shubnikov de Haas oscillation of the longitudinal resistivity observed from about 1 T. In such a device, the Hall state quantization at nu=2, at 19 T and 0.3 K, can be very robust: the dissipation in electronic transport can stay very low, with the longitudinal resistivity lower than 5 mOhm, for measurement currents as high as 250 uA. This is very promising in the view of an application in metrology.
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Submitted 20 March, 2014;
originally announced March 2014.
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Epitaxial Graphene Nanoribbons on Bunched Steps of a 6H-SiC(0001) Substrate: Aromatic Ring Pattern and Van Hove Singularities
Authors:
M. Ridene,
T. Wassmann,
E. Pallecchi,
G. Rodary,
J. C. Girard,
A. Ouerghi1
Abstract:
We report scanning tunneling microscopy and spectroscopy investigation of graphene nanoribbons grown on an array of bunched steps of a 6H-SiC(0001) substrate. Our scanning tunneling microscopy images of a graphene nanoribbons on a step terrace feature a (sqrt(3)x sqrt(3))R30° pattern of aromatic rings which define our armchair nanoribbons. This is in agreement to a simulation based on density func…
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We report scanning tunneling microscopy and spectroscopy investigation of graphene nanoribbons grown on an array of bunched steps of a 6H-SiC(0001) substrate. Our scanning tunneling microscopy images of a graphene nanoribbons on a step terrace feature a (sqrt(3)x sqrt(3))R30° pattern of aromatic rings which define our armchair nanoribbons. This is in agreement to a simulation based on density functional theory. As another signature of the one-dimensional electronic structure, in the corresponding scanning tunneling spectroscopy spectra we find well developed, sharp Van Hove singularities.
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Submitted 18 December, 2012;
originally announced December 2012.
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Supercollision cooling in undoped graphene
Authors:
A. C. Betz,
S. H. Jhang,
E. Pallecchi,
R. Feirrera,
G. Fève,
J. -M. Berroir,
B. Plaçais
Abstract:
Carrier mobility in solids is generally limited by electron-impurity or electron-phonon scattering depending on the most frequently occurring event. Three body collisions between carriers and both phonons and impurities are rare; they are denoted supercollisions (SCs). Elusive in electronic transport they should emerge in relaxation processes as they allow for large energy transfers. As pointed ou…
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Carrier mobility in solids is generally limited by electron-impurity or electron-phonon scattering depending on the most frequently occurring event. Three body collisions between carriers and both phonons and impurities are rare; they are denoted supercollisions (SCs). Elusive in electronic transport they should emerge in relaxation processes as they allow for large energy transfers. As pointed out in Ref. \onlinecite{Song2012PRL}, this is the case in undoped graphene where the small Fermi surface drastically restricts the allowed phonon energy in ordinary collisions. Using electrical heating and sensitive noise thermometry we report on SC-cooling in diffusive monolayer graphene. At low carrier density and high phonon temperature the Joule power $P$ obeys a $P\propto T_e^3$ law as a function of electronic temperature $T_e$. It overrules the linear law expected for ordinary collisions which has recently been observed in resistivity measurements. The cubic law is characteristic of SCs and departs from the $T_e^4$ dependence recently reported for metallic graphene below the Bloch-Grüneisen temperature. These supercollisions are important for applications of graphene in bolometry and photo-detection.
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Submitted 25 October, 2012;
originally announced October 2012.
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Effect of Oxygen Adsorption on the Local Properties of Epitaxial Graphene on SiC (0001)
Authors:
C. Mathieu,
B. Lalmi,
T. O. Mentes,
E. Pallecchi,
A. Locatelli,
S. Latil,
R. Belkhou,
A. Ouerghi
Abstract:
The effect of oxygen adsorption on the local structure and electronic properties of monolayer graphene grown on SiC(0001) has been studied by means of Low Energy Electron Microscopy (LEEM), microprobe Low Energy Electron Diffraction (\muLEED) and microprobe Angle Resolved Photoemission (\muARPES). We show that the buffer layer of epitaxial graphene on SiC(0001) is partially decoupled after oxidati…
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The effect of oxygen adsorption on the local structure and electronic properties of monolayer graphene grown on SiC(0001) has been studied by means of Low Energy Electron Microscopy (LEEM), microprobe Low Energy Electron Diffraction (\muLEED) and microprobe Angle Resolved Photoemission (\muARPES). We show that the buffer layer of epitaxial graphene on SiC(0001) is partially decoupled after oxidation. The monitoring of the oxidation process demonstrates that the oxygen saturates the Si dangling bonds, breaks some Si-C bonds at the interface and intercalates the graphene layer. Accurate control over the oxidation parameters enables us to tune the charge density modulation in the layer.
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Submitted 12 June, 2012;
originally announced June 2012.
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Observation of the quantum Hall effect in epitaxial graphene on SiC(0001) with oxygen adsorption
Authors:
E. Pallecchi,
M. Ridene,
D. Kazazis,
C. Mathieu,
F. Schopfer,
W. Poirier,
D. Mailly,
A. Ouerghi
Abstract:
In this letter we report on transport measurements of epitaxial graphene on SiC(0001) with oxygen adsorption. In a $50\times 50 μ\mathrm{m^2}$ size Hall bar we observe the half-integer quantum Hall effect with a transverse resistance plateau quantized at filling factor around $ν= 2$, an evidence of monolayer graphene. We find low electron concentration of $9\times 10^{11} \textrm{cm}^{-2}$ and we…
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In this letter we report on transport measurements of epitaxial graphene on SiC(0001) with oxygen adsorption. In a $50\times 50 μ\mathrm{m^2}$ size Hall bar we observe the half-integer quantum Hall effect with a transverse resistance plateau quantized at filling factor around $ν= 2$, an evidence of monolayer graphene. We find low electron concentration of $9\times 10^{11} \textrm{cm}^{-2}$ and we show that a do** of $10^{13}\textrm{cm}^{-2}$ which is characteristic of intrinsic epitaxial graphene can be restored by vacuum annealing. The effect of oxygen adsorption on carrier density is confirmed by local angle-resolved photoemission spectroscopy measurements. These results are important for understanding oxygen adsorption on epitaxial graphene and for its application to metrology and mesoscopic physics where a low carrier concentration is required.
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Submitted 12 July, 2012; v1 submitted 15 March, 2012;
originally announced March 2012.
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Hot electron cooling by acoustic phonons in graphene
Authors:
A. C. Betz,
F. Vialla,
D. Brunel,
C. Voisin,
M. Picher,
A. Cavanna,
A. Madouri,
G. Fève,
J. -M. Berroir,
B. Plaçais,
E. Pallecchi
Abstract:
We have investigated the energy loss of hot electrons in metallic graphene by means of GHz noise thermometry at liquid helium temperature. We observe the electronic temperature T / V at low bias in agreement with the heat diffusion to the leads described by the Wiedemann-Franz law. We report on $T\propto\sqrt{V}$ behavior at high bias, which corresponds to a T4 dependence of the cooling power. Thi…
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We have investigated the energy loss of hot electrons in metallic graphene by means of GHz noise thermometry at liquid helium temperature. We observe the electronic temperature T / V at low bias in agreement with the heat diffusion to the leads described by the Wiedemann-Franz law. We report on $T\propto\sqrt{V}$ behavior at high bias, which corresponds to a T4 dependence of the cooling power. This is the signature of a 2D acoustic phonon cooling mechanism. From a heat equation analysis of the two regimes we extract accurate values of the electron-acoustic phonon coupling constant $Σ$ in monolayer graphene. Our measurements point to an important effect of lattice disorder in the reduction of $Σ$, not yet considered by theory. Moreover, our study provides a strong and firm support to the rising field of graphene bolometric detectors.
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Submitted 11 August, 2012; v1 submitted 13 March, 2012;
originally announced March 2012.
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Graphene microwave transistors on sapphire substrates
Authors:
E. Pallecchi,
C. Benz,
A. C. Betz,
H. v. Löhneysen,
B. Plaçais,
R. Danneau
Abstract:
We have developed metal-oxide graphene field-effect transistors (MOGFETs) on sapphire substrates working at microwave frequencies. For monolayers, we obtain a transit frequency up to ~ 80 GHz for a gate length of 200 nm, and a power gain maximum frequency of about ~ 3 GHz for this specific sample. Given the strongly reduced charge noise for nanostructures on sapphire, the high stability and high p…
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We have developed metal-oxide graphene field-effect transistors (MOGFETs) on sapphire substrates working at microwave frequencies. For monolayers, we obtain a transit frequency up to ~ 80 GHz for a gate length of 200 nm, and a power gain maximum frequency of about ~ 3 GHz for this specific sample. Given the strongly reduced charge noise for nanostructures on sapphire, the high stability and high performance of this material at low temperature, our MOGFETs on sapphire are well suited for a cryogenic broadband low-noise amplifier.
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Submitted 27 June, 2011;
originally announced June 2011.
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Transport scattering time probed through rf admittance of a graphene capacitor
Authors:
E. Pallecchi,
A. C. Betz,
J. Chaste,
G. Fève,
B. Huard,
T. Kontos,
J. -M. Berroir,
B. Plaçais
Abstract:
We have investigated electron dynamics in top gated graphene by measuring the gate admittance of a diffusive graphene capacitor in a broad frequency range as a function of carrier density. The density of states, conductivity and diffusion constant are deduced from the low frequency gate capacitance, its charging time and their ratio. The admittance evolves from an RC-like to a skin-effect response…
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We have investigated electron dynamics in top gated graphene by measuring the gate admittance of a diffusive graphene capacitor in a broad frequency range as a function of carrier density. The density of states, conductivity and diffusion constant are deduced from the low frequency gate capacitance, its charging time and their ratio. The admittance evolves from an RC-like to a skin-effect response at GHz frequency with a crossover given by the Thouless energy. The scattering time is found to be independent of energy in the 0 - 200 meV investigated range at room temperature. This is consistent with a random mass model for Dirac Fermions.
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Submitted 23 March, 2011; v1 submitted 19 May, 2010;
originally announced May 2010.
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Thermal shot noise in top-gated single carbon nanotube field effect transistors
Authors:
J. Chaste,
E. Pallecchi,
P. Morfin,
G. Feve,
T. Kontos,
J. -M. Berroir,
P. Hakonen,
B. Placais
Abstract:
The high-frequency transconductance and current noise of top-gated single carbon nanotube transistors have been measured and used to investigate hot electron effects in one-dimensional transistors. Results are in good agreement with a theory of 1-dimensional nano-transistor. In particular the prediction of a large transconductance correction to the Johnson-Nyquist thermal noise formula is confirme…
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The high-frequency transconductance and current noise of top-gated single carbon nanotube transistors have been measured and used to investigate hot electron effects in one-dimensional transistors. Results are in good agreement with a theory of 1-dimensional nano-transistor. In particular the prediction of a large transconductance correction to the Johnson-Nyquist thermal noise formula is confirmed experimentally. Experiment shows that nanotube transistors can be used as fast charge detectors for quantum coherent electronics with a resolution of $13\mathrm{μe/\sqrt{Hz}}$ in the 0.2-$0.8 \mathrm{GHz}$ band.
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Submitted 12 May, 2010; v1 submitted 3 February, 2010;
originally announced February 2010.
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Characterisation of Ferromagnetic Contacts to Carbon Nanotubes
Authors:
D. Preusche,
S. Schmidmeier,
E. Pallecchi,
Ch. Dietrich,
A. K. Huettel,
J. Zweck,
Ch. Strunk
Abstract:
We present an investigation of different thin-film evaporated ferromagnetic materials for their suitability as electrodes in individual single-wall and multi-wall carbon nanotube-based spin devices. Various electrode shapes made from permalloy (Ni_{81}Fe_{19}), the diluted ferromagnet PdFe, and PdFe/Fe bilayers are studied for both their micromagnetic properties and their contact formation to ca…
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We present an investigation of different thin-film evaporated ferromagnetic materials for their suitability as electrodes in individual single-wall and multi-wall carbon nanotube-based spin devices. Various electrode shapes made from permalloy (Ni_{81}Fe_{19}), the diluted ferromagnet PdFe, and PdFe/Fe bilayers are studied for both their micromagnetic properties and their contact formation to carbon nanotubes. Suitable devices are tested in low-temperature electron transport measurements, displaying the typical tunneling magnetoresistance of carbon nanotube pseudo spin valves.
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Submitted 13 August, 2009; v1 submitted 6 April, 2009;
originally announced April 2009.
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Carbon Nanotube Quantum Dots with Nb Contacts
Authors:
Emiliano Pallecchi,
Markus Gaass,
Dmitry Ryndyk,
Christoph Strunk
Abstract:
We report on the preparation of carbon nanotube quantum dots using superconducting electrodes made of niobium. Gate-controllable supercurrents with values of up to 30 nA are induced by the proximity effect. The IV-curves are hysteretic at low temperature and the corresponding switching histograms have a width of ~0.5-2. An on-chip resistive environment integrated in the sample layout is used in…
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We report on the preparation of carbon nanotube quantum dots using superconducting electrodes made of niobium. Gate-controllable supercurrents with values of up to 30 nA are induced by the proximity effect. The IV-curves are hysteretic at low temperature and the corresponding switching histograms have a width of ~0.5-2. An on-chip resistive environment integrated in the sample layout is used in order to increase the switching current.
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Submitted 17 September, 2008; v1 submitted 1 April, 2008;
originally announced April 2008.
