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A tunable and versatile 28nm FD-SOI crossbar output circuit for low power analog SNN inference with eNVM synapses
Authors:
Joao Henrique Quintino Palhares,
Yann Beilliard,
Jury Sandrini,
Franck Arnaud,
Kevin Garello,
Guillaume Prenat,
Lorena Anghel,
Fabien Alibart,
Dominique Drouin,
Philippe Galy
Abstract:
In this work we report a study and a co-design methodology of an analog SNN crossbar output circuit designed in a 28nm FD-SOI technology node that comprises a tunable current attenuator and a leak-integrate and fire neurons that would enable the integration of emerging non-volatile memories (eNVMs) for synaptic arrays based on various technologies including phase change (PCRAM), oxide-based (OxRAM…
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In this work we report a study and a co-design methodology of an analog SNN crossbar output circuit designed in a 28nm FD-SOI technology node that comprises a tunable current attenuator and a leak-integrate and fire neurons that would enable the integration of emerging non-volatile memories (eNVMs) for synaptic arrays based on various technologies including phase change (PCRAM), oxide-based (OxRAM), spin transfer and spin orbit torque magnetic memories (STT, SOT-MRAM). Circuit SPICE simulation results and eNVM experimental data are used to showcase and estimate the neurons fan-in for each type of eNVM considering the technology constraints and design trade-offs that set its limits such as membrane capacitance and supply voltage, etc.
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Submitted 25 May, 2023;
originally announced May 2023.
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Oxygen vacancy engineering of TaOx-based resistive memories by Zr do** for improved variability and synaptic behavior
Authors:
Joao H. Quintino Palhares,
Yann Beilliard,
Fabien Alibart,
Everton Bonturim,
Daniel Z. de Florio,
Fabio C. Fonseca,
Dominique Drouin,
Andre S. Ferlauto
Abstract:
Resistive switching devices are promising emerging non-volatile memories. However, one of the biggest challenges for resistive switching (RS) memory applications is the device-to-device (D2D) variability which is related to the intrinsic stochastic formation and configuration of oxygen vacancy (VO) conductive filaments. In order to reduce D2D variability, the control of oxygen vacancy formation an…
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Resistive switching devices are promising emerging non-volatile memories. However, one of the biggest challenges for resistive switching (RS) memory applications is the device-to-device (D2D) variability which is related to the intrinsic stochastic formation and configuration of oxygen vacancy (VO) conductive filaments. In order to reduce D2D variability, the control of oxygen vacancy formation and configuration is paramount. We report in this study Zr do** of TaOx-based RS devices prepared by pulsed laser deposition (PLD) as an efficient mean to reduce VO formation energy and increase conductive filament (CF) confinement, thus reducing D2D variability. Such findings were supported by X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry (SE) and electronic transport analysis. Zr doped films presented increased VO concentration, and more localized VO thanks to the interaction with Zr. According to DC and pulse mode electrical characterization, D2D variability was decreased by a factor of 7, resistance window was doubled and a more gradual and monotonic long-term potentiation/depression (LTP/LTD) in pulse switching was achieved in forming-free Zr:TaOx devices thus displaying promising performance for artificial synapse applications.
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Submitted 22 April, 2021; v1 submitted 16 December, 2020;
originally announced December 2020.
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Alumina coating for dispersion management in ultra-high Q microresonators
Authors:
Marvyn Inga,
Laís Fujii,
José Maria C. da Silva Filho,
João Henrique Q. Palhares,
Andre S. Ferlauto,
Francisco C. Marques,
Thiago P. Mayer Alegre,
Gustavo S. Wiederhecker
Abstract:
Silica optical microspheres often exhibit ultra-high quality factors, yet, their group velocity dispersion, which is crucial for nonlinear optics applications, can only be coarsely tuned. We experimentally demonstrate that group-velocity dispersion of a silica microsphere can be engineered by coating it with conformal nanometric layers of alumina, yet preserving its ultra-high optical quality fact…
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Silica optical microspheres often exhibit ultra-high quality factors, yet, their group velocity dispersion, which is crucial for nonlinear optics applications, can only be coarsely tuned. We experimentally demonstrate that group-velocity dispersion of a silica microsphere can be engineered by coating it with conformal nanometric layers of alumina, yet preserving its ultra-high optical quality factors (\num{\sim e7}) at telecom wavelengths. Using the atomic layer deposition technique for the dielectric coating, which ensures nm-level thickness control, we not only achieve a fine dispersion tailoring but also maintain a low surface roughness and material absorption to ensure a low optical loss. Numerical simulations supporting our experimental results show that the alumina layer thickness is a promising technique for precise tuning of group-velocity dispersion. As an application we demonstrate the generation of Kerr optical frequency combs, showing that the alumina coatings can also sustain the high optical intensities necessary for nonlinear optical phenomena.
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Submitted 16 September, 2020;
originally announced September 2020.
