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Evaluation of the Thermal Stability of TiW/Cu Heterojunctions Using a Combined SXPS and HAXPES Approach
Authors:
Curran Kalha,
Michael Reisinger,
Pardeep. K. Thakur,
Tien-Lin Lee,
Sriram Venkatesan,
Mark Isaacs,
Robert G. Palgrave,
Johannes Zechner,
Michael Nelhiebel,
Anna Regoutz
Abstract:
Power semiconductor device architectures require the inclusion of a diffusion barrier to suppress, or at best prevent the interdiffusion between the copper metallisation interconnects and the surrounding silicon substructure. The binary pseudo-alloy of titanium-tungsten (TiW), with $>$70~at.\% W, is a well established copper diffusion barrier but is prone to degradation via the out-diffusion of ti…
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Power semiconductor device architectures require the inclusion of a diffusion barrier to suppress, or at best prevent the interdiffusion between the copper metallisation interconnects and the surrounding silicon substructure. The binary pseudo-alloy of titanium-tungsten (TiW), with $>$70~at.\% W, is a well established copper diffusion barrier but is prone to degradation via the out-diffusion of titanium when exposed to high temperatures ($\geq$400$^\circ$C). Here, the thermal stability of physical vapour deposited (PVD) TiW/Cu bilayer thin films in Si/SiO\textsubscript{2}(50~nm)/TiW(300~nm)/Cu(25~nm) stacks were characterised in response to annealing at 400$^\circ$C for 0.5~h and 5~h, using a combination of soft and hard X-ray photoelectron spectroscopy (SXPS and HAXPES) and transmission electron microscopy (TEM). Results show that annealing promoted the segregation of titanium out of the TiW and interdiffusion into the copper metallisation. Titanium was shown be driven toward the free copper surface, accumulating there and forming a titanium oxide overlayer upon exposure to air. Annealing for longer timescales promoted a greater out-diffusion of titanium and a thicker oxide layer to grow on the copper surface. However, interface measurements suggest that the diffusion is not significant enough to compromise the barrier integrity and the TiW/Cu interface remains stable even after 5~h of annealing.
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Submitted 20 January, 2022;
originally announced January 2022.
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Degradation of Layered Oxide Cathode in a Sodium Battery: A Detailed Investigation by X-Ray Tomography at the Nanoscale
Authors:
Daniele Di Lecce,
Vittorio Marangon,
Mark Isaacs,
Robert Palgrave,
Paul R. Shearing,
Jusef Hassoun
Abstract:
The degradation mechanism in a sodium cell of a layered Na0.48Al0.03Co0.18Ni0.18Mn0.47O2 (NCAM) cathode with P3/P2 structure is investigated by revealing the changes in microstructure and composition upon cycling. The work aims to rationalize the gradual performance decay and the alteration of the electrochemical response in terms of polarization, voltage signature, and capacity loss. Spatial reco…
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The degradation mechanism in a sodium cell of a layered Na0.48Al0.03Co0.18Ni0.18Mn0.47O2 (NCAM) cathode with P3/P2 structure is investigated by revealing the changes in microstructure and composition upon cycling. The work aims to rationalize the gradual performance decay and the alteration of the electrochemical response in terms of polarization, voltage signature, and capacity loss. Spatial reconstructions of the electrode by X-ray computed tomography at the nanoscale supported by quantitative and qualitative analyses show fractures and deformations in the cycled layered metal-oxide particles, as well as inorganic side compounds deposited on the material. These irreversible morphological modifications reflect structural heterogeneities across the cathode particles due to formation of various domains with different Na+ intercalation degrees. Besides, X-ray photoelectron spectroscopy data suggest that the latter inorganic species in the cycled electrode are mainly composed of NaF, Na2O, and NaCO3 formed by parasitic electrolyte decomposition. The precipitation of these insulating compounds at the electrode/electrolyte interphase and the related structural stresses induced in the material lead to a decrease in cathode particle size and partial loss of electrochemical activity. The retention of the NCAM phase after cycling suggests that electrolyte upgrade may improve the performance of the cathode to achieve practical application for sustainable energy storage.
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Submitted 25 August, 2021;
originally announced August 2021.
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Bandgap Lowering in Mixed Alloys of Cs2Ag(SbxBi1-x)Br6 Double Perovskite Thin Films
Authors:
Zewei Li,
Sean Kavanagh,
Mari Napari,
Robert G. Palgrave,
Mojtaba Abdi-Jalebi,
Zahra Andaji-Garmaroudi,
Daniel W. Davies,
Mikko Laitinen,
Jaakko Julin,
Richard H. Friend,
David O. Scanlon,
Aron Walsh,
Robert L. Z. Hoye
Abstract:
Halide double perovskites have gained significant attention, owing to their composition of low-toxicity elements, stability in air and long charge-carrier lifetimes. However, most double perovskites, including Cs2AgBiBr6, have wide bandgaps, which limit photo conversion efficiencies. The bandgap can be reduced through hallowing with Sb3+, but Sb-rich alloys are difficult to synthesise due to the h…
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Halide double perovskites have gained significant attention, owing to their composition of low-toxicity elements, stability in air and long charge-carrier lifetimes. However, most double perovskites, including Cs2AgBiBr6, have wide bandgaps, which limit photo conversion efficiencies. The bandgap can be reduced through hallowing with Sb3+, but Sb-rich alloys are difficult to synthesise due to the high formation energy of Cs2AgSbBr6, which itself has a wide bandgap. We develop a solution-based route to synthesis phase-pure Cs2Ag(SbxBi1-x)Br6 thin films, with the mixing parameter x continuous varying over the entire composition range. We reveal that the mixed alloys (x between 0.5 and 0.9) demonstrate smaller bandgaps (as low as 2.08 eV) than the pure Sb- (2.18 eV) and Bi-based (2.25 eV) compounds, with strong deviation from Vegard's law. Through in-depth computations, we propose that bandgap lowering arises from the Type II band alignment between Cs2AgBiBr6 and Cs2AgSbBr6. The energy mismatch between the Bi and Sb s and p atomic orbitals, coupled with their non-linear mixing, results in the alloys adopting a smaller bandgap than the pure compounds. Our work demonstrates an approach to achieve bandgap reduction and highlights that bandgap bowing may be found in other double perovskite alloys by pairing together materials forming a Type II band alignment.
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Submitted 1 July, 2020;
originally announced July 2020.
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Structure and lattice dynamics of the wide band gap semiconductors MgSiN$_{2}$ and MgGeN$_{2}$
Authors:
M. Råsander,
J. B. Quirk,
T. Wang,
S. Mathew,
R. Davies,
R. Palgrave,
M. A. Moram
Abstract:
We have determined the structural and lattice dynamical properties of the orthorhombic, wide band gap semiconductors MgSiN$_{2}$ and MgGeN$_{2}$ using density functional theory. In addition, we present structural properties and Raman spectra of a MgSiN$_{2}$ powder. The structural properties and lattice dynamics of the orthorhombic systems are compared to wurtzite AlN. We find clear differences in…
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We have determined the structural and lattice dynamical properties of the orthorhombic, wide band gap semiconductors MgSiN$_{2}$ and MgGeN$_{2}$ using density functional theory. In addition, we present structural properties and Raman spectra of a MgSiN$_{2}$ powder. The structural properties and lattice dynamics of the orthorhombic systems are compared to wurtzite AlN. We find clear differences in the lattice dynamics between MgSiN$_{2}$, MgGeN$_{2}$ and AlN, for example we find that the highest phonon frequency in MgSiN$_{2}$ is about 100~cm$^{-1}$ higher than the highest frequency in AlN and that MgGeN$_{2}$ is much softer. We also provide the Born effective charge tensors and dielectric tensors of MgSiN$_{2}$, MgGeN$_{2}$ and AlN. Phonon related thermodynamic properties, such as the heat capacity and entropy, are in very good agreement with available experimental results.
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Submitted 3 May, 2017;
originally announced May 2017.
