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Spin-Orbit Interaction Induced in Graphene by Transition-Metal Dichalcogenides
Authors:
T. Wakamura,
F. Reale,
P. Palczynski,
M. Q. Zhao,
A. T. C. Johnson,
S. Guéron,
C. Mattevi,
A. Ouerghi,
H. Bouchiat
Abstract:
We report a systematic study on strong enhancement of spin-orbit interaction (SOI) in graphene driven by transition-metal dichalcogenides (TMDs). Low temperature magnetotoransport measurements of graphene proximitized to different TMDs (monolayer and bulk WSe$_2$, WS$_2$ and monolayer MoS$_2$) all exhibit weak antilocalization peaks, a signature of strong SOI induced in graphene. The amplitudes of…
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We report a systematic study on strong enhancement of spin-orbit interaction (SOI) in graphene driven by transition-metal dichalcogenides (TMDs). Low temperature magnetotoransport measurements of graphene proximitized to different TMDs (monolayer and bulk WSe$_2$, WS$_2$ and monolayer MoS$_2$) all exhibit weak antilocalization peaks, a signature of strong SOI induced in graphene. The amplitudes of the induced SOI are different for different materials and thickness, and we find that monolayer WSe$_2$ and WS$_2$ can induce much stronger SOI than bulk ones and also monolayer MoS$_2$. The estimated spin-orbit (SO) scattering strength for the former reaches $\sim$ 10 meV whereas for the latter it is around 1 meV or less. We also discuss the symmetry and type of the induced SOI in detail, especially focusing on the identification of intrinsic and valley-Zeeman (VZ) SOI via the dominant spin relaxation mechanism. Our findings offer insight on the possible realization of the quantum spin Hall (QSH) state in graphene.
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Submitted 19 February, 2019; v1 submitted 17 September, 2018;
originally announced September 2018.
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Electronic band structure of Two-Dimensional WS2/Graphene van der Waals Heterostructures
Authors:
Hugo Henck,
Zeineb Ben Aziza,
Debora Pierucci,
Feriel Laourine,
Francesco Reale,
Pawel Palczynski,
Julien Chaste,
Mathieu G. Silly,
François Bertran,
Patrick Le Fevre,
Emmanuel Lhuillier,
Taro Wakamura,
Cecilia Mattevi,
Julien E. Rault,
Matteo Calandra,
Abdelkarim Ouerghi
Abstract:
Combining single-layer two-dimensional semiconducting transition metal dichalcogenides (TMDs) with graphene layer in van der Waals heterostructures offers an intriguing means of controlling the electronic properties through these heterostructures. Here, we report the electronic and structural properties of transferred single layer WS2 on epitaxial graphene using micro-Raman spectroscopy, angle-res…
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Combining single-layer two-dimensional semiconducting transition metal dichalcogenides (TMDs) with graphene layer in van der Waals heterostructures offers an intriguing means of controlling the electronic properties through these heterostructures. Here, we report the electronic and structural properties of transferred single layer WS2 on epitaxial graphene using micro-Raman spectroscopy, angle-resolved photoemission spectroscopy measurements (ARPES) and Density Functional Theory (DFT) calculations. The results show good electronic properties as well as well-defined band arising from the strong splitting of the single layer WS2 valence band at K points, with a maximum splitting of 0.44 eV. By comparing our DFT results with local and hybrid functionals, we find the top valence band of the experimental heterostructure is close to the calculations for suspended single layer WS2. . Our results provide an important reference for future studies of electronic properties of WS2 and its applications in valleytronic devices.
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Submitted 13 June, 2018;
originally announced June 2018.
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Strong Spin-Orbit Interaction Induced in Graphene by Monolayer WS$_2$
Authors:
Taro Wakamura,
Francesco Reale,
Pawel Palczynski,
Sophie Guéron,
Cecilia Mattevi,
Hélène Bouchiat
Abstract:
We demonstrate strong anisotropic spin-orbit interaction (SOI) in graphene induced by monolayer WS$_2$. Direct comparison between graphene/monolayer WS$_2$ and graphene/bulk WS$_2$ system in magnetotransport measurements reveals that monolayer transition metal dichalcogenide (TMD) can induce much stronger SOI than bulk. Detailed theoretical analysis of the weak-antilocalization curves gives an est…
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We demonstrate strong anisotropic spin-orbit interaction (SOI) in graphene induced by monolayer WS$_2$. Direct comparison between graphene/monolayer WS$_2$ and graphene/bulk WS$_2$ system in magnetotransport measurements reveals that monolayer transition metal dichalcogenide (TMD) can induce much stronger SOI than bulk. Detailed theoretical analysis of the weak-antilocalization curves gives an estimated spin-orbit energy ($E_{\rm so}$) higher than 10 meV. The symmetry of the induced SOI is also discussed, and the dominant $z$ $\rightarrow$ $-z$ symmetric SOI can only explain the experimental results. Spin relaxation by the Elliot-Yafet (EY) mechanism and anomalous resistance increase with temperature close to the Dirac point indicates Kane-Mele (KM) SOI induced in graphene.
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Submitted 11 April, 2018; v1 submitted 20 October, 2017;
originally announced October 2017.
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3D Printing of 2D Atomically Thin Materials
Authors:
Chiara Grotta,
Peter C Sherrell,
Pawel Palczynski,
Maria Sokolikova,
Kanudha Sharda,
Cecilia Mattevi
Abstract:
The emerging new paradigm of technologies, the internet of things, entails a process of device miniaturization to combine several functional components, such as sensors, actuators, and powering elements, in a single individual on-chip platform. An essential requirement is for the devices to have a small footprint and thus to be extended over three-dimensions to present adequate performance. A suit…
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The emerging new paradigm of technologies, the internet of things, entails a process of device miniaturization to combine several functional components, such as sensors, actuators, and powering elements, in a single individual on-chip platform. An essential requirement is for the devices to have a small footprint and thus to be extended over three-dimensions to present adequate performance. A suitable technique to realize devices of complex architectures and virtually any size is three-dimensional printing. So far its use has seen applications exclusively at the macroscale. Here we report the first 3D printed architectures via robocasting of two-dimensional atomically thin transition metal dichalcogenides demonstrating their use as miniaturizable supercapacitors. The structures are fabricated via direct printing of a liquid ink of chemically exfoliated 2D nanosheets. The 3D printed architectures present footprints in the mm2 scale and micron-sized features and they demonstrate mechanical robustness and chemical stability. They exhibit areal capacitance of 1450 mF/cm2, rivalling and surpassing comparable devices. Microsupercapacitors comprising two-dimensional atomically thin sheets can enable miniaturization and upscaleable production technologies for wide-scale adoption.
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Submitted 28 September, 2018; v1 submitted 11 October, 2017;
originally announced October 2017.
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High-Mobility and High-Optical Quality Atomically Thin WS2
Authors:
Francesco Reale,
Pawel Palczynski,
Iddo Amit,
Gareth F. Jones,
Jake D. Mehew,
Agnes Bacon,
Na Ni,
Peter C. Sherrell,
Stefano Agnoli,
Monica F. Craciun,
Saverio Russo,
Cecilia Mattevi
Abstract:
The rise of atomically thin materials has the potential to enable a paradigm shift in modern technologies by introducing multi-functional materials in the semiconductor industry. To date the growth of high quality atomically thin semiconductors (e.g. WS2) is one of the most pressing challenges to unleash the potential of these materials and the growth of mono- or bi-layers with high crystal qualit…
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The rise of atomically thin materials has the potential to enable a paradigm shift in modern technologies by introducing multi-functional materials in the semiconductor industry. To date the growth of high quality atomically thin semiconductors (e.g. WS2) is one of the most pressing challenges to unleash the potential of these materials and the growth of mono- or bi-layers with high crystal quality is yet to see its full realization. Here, we show that the novel use of molecular precursors in the controlled synthesis of mono- and bi-layer WS2 leads to superior material quality compared to the widely used topotactic transformation of WO3-based precursors. Record high room temperature charge carrier mobility up to 52 cm2/Vs and ultra-sharp photoluminescence linewidth of just 36 meV over submillimeter areas demonstrate that the quality of this material supersedes also that of naturally occurring materials. By exploiting surface diffusion kinetics of W and S species adsorbed onto a substrate, a deterministic layer thickness control has also been achieved promoting the design of scalable synthesis routes.
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Submitted 24 July, 2017;
originally announced July 2017.
