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Valley polarization and photocurrent generation in transition metal dichalcogenide alloy MoS$_{2x}$Se$_{2(1-x)}$
Authors:
Chumki Nayak,
Suvadip Masanta,
Sukanya Ghosh,
Shubhadip Moulick,
Atindra Nath Pal,
Indrani Bose,
Achintya Singha
Abstract:
Monolayer transition metal dichalcogenides (TMDCs) constitute the core group of materials in the emerging semiconductor technology of valleytronics. While the coupled spin-valley physics of pristine TMDC materials and their heterstructures has been extensively investigated, less attention was given to TMDC alloys, which could be useful in optoelectronic applications due to the tunability of their…
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Monolayer transition metal dichalcogenides (TMDCs) constitute the core group of materials in the emerging semiconductor technology of valleytronics. While the coupled spin-valley physics of pristine TMDC materials and their heterstructures has been extensively investigated, less attention was given to TMDC alloys, which could be useful in optoelectronic applications due to the tunability of their band gaps. We report here our experimental investigations of the spin-valley physics of the monolayer and bilayer TMDC alloy, MoS$_{2x}$Se$_{2(1-x)}$, in terms of valley polarization and the generation as well as electrical control of a photocurrent utilising the circular photogalvanic effect. Piezoelectric force microscopy provides evidence for an internal electric field perpendicular to the alloy layer, thus breaking the out-of-plane mirror symmetry. The experimental observation is supported by first principles calculations based on the density functional theory. A comparison of the photocurrent device, based on the alloy material, is made with similar devices involving other TMDC materials.
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Submitted 11 November, 2023; v1 submitted 21 October, 2023;
originally announced October 2023.
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Resonant transport in a highly conducting single molecular junction via metal-metal covalent bond
Authors:
Biswajit Pabi,
Štepán Marek,
Adwitiya Pal,
Puja Kumari,
Soumya Jyoti Ray,
Arunabha Thakur,
Richard Korytár,
Atindra Nath Pal
Abstract:
Achieving highly transmitting molecular junctions through resonant transport at low bias is key to the next-generation low-power molecular devices. Although, resonant transport in molecular junctions was observed by connecting a molecule between the metal electrodes via chemical anchors by applying a high source-drain bias (> 1V), the conductance was limited to < 0.1 G$_0$, G$_0$ being the quantum…
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Achieving highly transmitting molecular junctions through resonant transport at low bias is key to the next-generation low-power molecular devices. Although, resonant transport in molecular junctions was observed by connecting a molecule between the metal electrodes via chemical anchors by applying a high source-drain bias (> 1V), the conductance was limited to < 0.1 G$_0$, G$_0$ being the quantum of conductance. Here, we report electronic transport measurements by directly connecting a Ferrocene molecule between Au electrodes at the ambient condition in a mechanically controllable break junction setup (MCBJ), revealing a conductance peak at ~ 0.2 G$_0$ in the conductance histogram. A similar experiment was repeated for Ferrocene terminated with amine (-NH2) and cyano (-CN) anchors, where conductance histograms exhibit an extended low conductance feature including the sharp high conductance peak, similar to pristine ferrocene. Statistical analysis of the data along with density functional theory-based transport calculation suggests the possible molecular conformation with a strong hybridization between the Au electrodes and Fe atom of Ferrocene molecule is responsible for a near-perfect transmission in the vicinity of the Fermi energy, leading to the resonant transport at a small applied bias (< 0.5V). Moreover, calculations including Van der Waals/dispersion corrections reveal a covalent like organometallic bonding between Au and the central Fe atom of Ferrocene, having bond energies of ~ 660 meV. Overall, our study not only demonstrates the realization of an air-stable highly transmitting molecular junction, but also provides an important insight about the nature of chemical bonding at the metal/organo-metallic interface.
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Submitted 8 August, 2023;
originally announced August 2023.
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Detection of nontrivial topology driven by charge density wave in a semi-Dirac metal
Authors:
Rafiqul Alam,
Prasun Boyal,
Shubhankar Roy,
Ratnadwip Singha,
Buddhadeb Pal,
Riju Pal,
Prabhat Mandal,
Priya Mahadevan,
Atindra Nath Pal
Abstract:
The presence of electron correlations in a system with topological order can lead to exotic ground states. Considering single crystals of LaAgSb2 which has a square net crystal structure, one finds multiple charge density wave transitions (CDW) as the temperature is lowered. We find large planar Hall (PHE) signals in the CDW phase, which are still finite in the high temperature phase though they c…
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The presence of electron correlations in a system with topological order can lead to exotic ground states. Considering single crystals of LaAgSb2 which has a square net crystal structure, one finds multiple charge density wave transitions (CDW) as the temperature is lowered. We find large planar Hall (PHE) signals in the CDW phase, which are still finite in the high temperature phase though they change sign. Optimising the structure within first-principles calculations, one finds an unusual chiral metallic phase. This is because as the temperature is lowered, the electrons on the Ag atoms get more localized, leading to stronger repulsions between electrons associated with atoms on different layers. This leads to successive layers sliding with respect to each other, thereby stabilising a chiral structure in which inversion symmetry is also broken. The large Berry curvature associated with the low temperature structure explains the low temperature PHE. At high temperature the PHE arises from the changes induced in the tilted Dirac cone in a magnetic field. Our work represents a route towards detecting and understanding the mechanism in a correlation driven topological transition through electron transport measurements, complemented by ab-initio electronic structure calculations.
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Submitted 8 August, 2023; v1 submitted 7 August, 2023;
originally announced August 2023.
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Establishing Magnetic Coupling in Spin-crossover-2D Hybrid Nanostructures via Interfacial Charge-transfer Interaction
Authors:
Shatabda Bhattacharya,
Shubhadip Moulick,
Chinmoy Das,
Shiladitya Karmakar,
Hirokazu Tada,
Tanusri Saha-Dasgupta,
Pradip Chakraborty,
Atindra Nath Pal
Abstract:
Despite a clear demonstration of bistability in spin-crossover (SCO) materials, the absence of long-range magnetic order and poor electrical conductivity limit their prospect in spintronic and nanoelectronic applications. Intending to create hybrid devices made of spin-crossover (SCO)-2D architecture, here, we report an easily processable Fe-based SCO nanostructures grown on 2D reduced graphene ox…
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Despite a clear demonstration of bistability in spin-crossover (SCO) materials, the absence of long-range magnetic order and poor electrical conductivity limit their prospect in spintronic and nanoelectronic applications. Intending to create hybrid devices made of spin-crossover (SCO)-2D architecture, here, we report an easily processable Fe-based SCO nanostructures grown on 2D reduced graphene oxide (rGO). The heterostructure shows enhanced cooperativity due to formation of interfacial charge transfer induced inter-molecular interaction. The spin transition temperature is controlled by tuning the coverage area of SCO nanostructured networks over the 2D surfaces, thus manipulating hysteresis (aka memory) of the heterostructure. The enhanced magnetic coupling of the heterostructure leads to the spontaneous magnetization states with a large coercive field of $\sim$ 3000 Oe. Additionally, the low conductivity of the pristine SCO nanostructures is addressed by encapsulating them on suitable 2D rGO template, enabling detection of magnetic bistable spin states during high-spin/low-spin conductance change. This adds spin functionality in conductance switching for realizing hybrid 2D spintronic devices. Ab-inito calculations, on the experimentally proposed nanostructures, corroborate the enhanced magnetic interaction in the proposed architecture facilitated by interfacial charge transfer and provide insights on the microscopic mechanism.
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Submitted 26 July, 2023;
originally announced July 2023.
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Structural regulation of mechanical gating in molecular junctions
Authors:
Biswajit Pabi,
Jakub Šebesta,
Richard Korytár,
Oren Tal,
Atindra Nath Pal
Abstract:
In contrast to silicon-based transistors, single molecule junctions can be gated by simple mechanical means. Specifically, charge can be transferred between the junction's electrodes and its molecular bridge when the interelectrode distance is modified, leading to variations in the electronic transport properties of the junction. While this effect has been studied extensively, the influence of the…
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In contrast to silicon-based transistors, single molecule junctions can be gated by simple mechanical means. Specifically, charge can be transferred between the junction's electrodes and its molecular bridge when the interelectrode distance is modified, leading to variations in the electronic transport properties of the junction. While this effect has been studied extensively, the influence of the molecule orientation on mechanical gating has not been addressed, despite its potential influence on the gating effectiveness. Here, we show that the same molecular junction can experience either clear mechanical gating or none, depending on the molecule orientation in the junctions. The effect is found in silver-ferrocene-silver break junctions, and analyzed in view of ab-initio and transport calculations, where the influence of molecular orbitals geometry on charge transfer to or from the molecule is revealed. The molecule orientation is thus a new degree of freedom that can be used to optimize mechanically-gated molecular junctions.
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Submitted 6 April, 2023;
originally announced April 2023.
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Unusual magnetotransport and anomalous Hall effect in quasi-two-dimensional van der Waals ferromagnet Fe$_4$GeTe$_2$
Authors:
Riju Pal,
Buddhadeb Pal,
Suchanda Mondal,
Prabhat Mandal,
Atindra Nath Pal
Abstract:
Fe$_4$GeTe$_2$, an itinerant vdW ferromagnet (FM) having Curie temperature (T$_C$) close to room temperature ($\sim 270$ K), exhibits another transition (T$_{SR}$ $\sim$ 120 K) where the easy axis of magnetization changes from in-plane to the out-of-plane direction in addition to T$_C$. Here, we have studied the magnetotransport in a multilayer Hall bar device fabricated on 300 nm Si/SiO$_2$ subst…
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Fe$_4$GeTe$_2$, an itinerant vdW ferromagnet (FM) having Curie temperature (T$_C$) close to room temperature ($\sim 270$ K), exhibits another transition (T$_{SR}$ $\sim$ 120 K) where the easy axis of magnetization changes from in-plane to the out-of-plane direction in addition to T$_C$. Here, we have studied the magnetotransport in a multilayer Hall bar device fabricated on 300 nm Si/SiO$_2$ substrate. Interestingly, the zero field resistivity shows a negligible change in resistivity near T$_C$ unlike the typical metallic FM, whereas, it exhibits a dramatic fall below T$_{SR}$. Also, the resistivity shows a weak anomaly at T $ \sim $ 38 K (T$_Q$), below which the resistivity shows a quadratic temperature dependence according to the Fermi liquid behavior. Temperature-dependent Hall data exhibits important consequences. The ordinary Hall coefficient changes sign near T$_{SR}$ indicating the change in majority carriers. In a similar manner, the magnetoresistance (MR) data shows significantly large negative MR near T$_{SR}$ and becomes positive below T$_Q$. The observations of anomaly in the resistivity, sign-change of the ordinary Hall coefficient and maximum negative MR near T$_{SR}$, together suggest a possible Fermi surface reconstruction associated with the spin reorientation transition. Furthermore, analysis of the Hall data reveals a significant anomalous Hall conductivity (AHC) from $\sim 123 Ω^{-1}$ cm$^{-1}$ (at T $\approx$ 5 K) to the maximum value of $\sim 366 Ω^{-1}$ cm$^{-1}$ near T$_{SR}$. While the low-temperature part may originate due to the intrinsic KL mechanism, our analysis indicates that the temperature-dependent AHC is primarily appearing due to the side-jump mechanism as a result of the spin-flip electron-magnon scattering. Our study demonstrates an interplay between magnetism and band topology and its consequence on electron transport in Fe$_4$GeTe$_2$.
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Submitted 13 March, 2023;
originally announced March 2023.
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Exciton-Plasmon Coupling Mediated Superior Photoresponse in 2D Hybrid Phototransistors
Authors:
Shubhrasish Mukherjee,
Didhiti Bhattacharya,
Samit Kumar Ray,
Atindra Nath Pal
Abstract:
The possibility of creating heterostructure of two-dimensional (2D) materials has emerged as a viable route towards realizing novel optoelectronic devices. However, the low light absorption due to their small absorption cross section, limits their realistic application. While light-matter interaction mediated by strong exciton-plasmon coupling has been demonstrated to improve absorbance and sponta…
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The possibility of creating heterostructure of two-dimensional (2D) materials has emerged as a viable route towards realizing novel optoelectronic devices. However, the low light absorption due to their small absorption cross section, limits their realistic application. While light-matter interaction mediated by strong exciton-plasmon coupling has been demonstrated to improve absorbance and spontaneous emission in a coupled TMDC and metallic nanostructures, the fabrication of tunable broadband phototransistor with high quantum yield is still a challenging task. By synthesizing Ag nanoparticles (Ag NPs) capped with a thin layer of polyvinylpyrrolidone (PVP) through chemical route, we report a lithography-free fabrication of a large area broadband superior gate-tunable hybrid phototransistor based on monolayer graphene decorated by WS$_2$-Ag NPs in a three-terminal device configuration. The fabricated device exhibits extremely high photoresponsivity (up to $3.2\times 10^4$ A/W) which is more than 5 times higher than the bare graphene/WS$_2$ hybrid device, along with a low noise equivalent power (NEP) (~10$^{-13}$ W/Hz$^{0.5}$, considering 1/f noise) and high specific detectivity ~1010 Jones in the wide (325-730 nm) wavelength region. The additional PVP cap** of Ag NPs helps to suppress the direct charge and heat transfer and most importantly, increases the device stability by preventing the degradation of WS$_2$-Ag hybrid system. The enhanced optical properties of the hybrid device are explained via dipole mediated strong exciton-plasmon coupling, corroborated by COMSOL Multiphysics simulation. Our work demonstrates a strategy towards obtaining an environment-friendly, scalable, high-performance broadband phototransistor by tuning the exciton-plasmon coupling for new generation opto-electronic devices.
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Submitted 12 March, 2023;
originally announced March 2023.
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Enhanced coercivity and emergence of spin cluster glass state in 2D ferromagnetic material Fe3GeTe2
Authors:
Satyabrata Bera,
Suman Kalyan Pradhan,
Riju Pal,
Buddhadeb Pal,
Arnab Bera,
Sk Kalimuddin,
Manjil Das,
Deep Singha Roy,
Hasan Afzal,
Atindra Nath Pal,
Mintu Mondal
Abstract:
Two-dimensional (2D) van der Waals (vdW) magnetic materials with high coercivity and high $T_\text{C}$ are desired for spintronics and memory storage applications. Fe$_3$GeTe$_2$ (F3GT) is one such 2D vdW ferromagnet with a reasonably high $T_\text{C}$, but with a very low coercive field, $H_\text{c}$ ($\lesssim$100~Oe). Some of the common techniques of enhancing $H_\text{c}$ are by introducing pi…
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Two-dimensional (2D) van der Waals (vdW) magnetic materials with high coercivity and high $T_\text{C}$ are desired for spintronics and memory storage applications. Fe$_3$GeTe$_2$ (F3GT) is one such 2D vdW ferromagnet with a reasonably high $T_\text{C}$, but with a very low coercive field, $H_\text{c}$ ($\lesssim$100~Oe). Some of the common techniques of enhancing $H_\text{c}$ are by introducing pinning centers, defects, stress, do**, etc. They involve the risk of undesirable alteration of other important magnetic properties. Here we propose a very easy, robust, and highly effective method of phase engineering by altering the sample growth conditions to greatly enhance the intrinsic coercivity (7-10 times) of the sample, without compromising its fundamental magnetic properties ($T_\text{C}\simeq$210K). The phase-engineered sample (F3GT-2) comprises of parent F3GT phase with a small percentage of randomly embedded clusters of a coplanar FeTe (FT) phase. The FT phase serves as both mosaic pinning centers between grains of F3GT above its antiferromagnetic transition temperature ($T_\text{C1}\sim$70~K) and also as anti-phase domains below $T_\text{C1}$. As a result, the grain boundary disorder and metastable nature are greatly augmented, leading to highly enhanced coercivity, cluster spin glass, and meta-magnetic behavior. The enhanced coercivity ($\simeq$1~kOe) makes F3GT-2 much more useful for memory storage applications and is likely to elucidate a new route to tune useful magnetic properties. Moreover, this method is much more convenient than hetero-structure and other cumbersome techniques.
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Submitted 29 December, 2022;
originally announced December 2022.
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Sensing Remote Bulk Defects Through Resistance Noise in a Large Area Graphene Field Effect Transistor
Authors:
Shubhadip Moulick,
Rafiqul Alam,
Atindra Nath Pal
Abstract:
Substrate plays a crucial role in determining transport and low frequency noise behavior of graphene field effect devices. Typically, heavily dope Si/SiO$_2$ substrate is used to fabricate these devices for efficient gating. Trap**-detrap** processes closed to the graphene/substrate interface are the dominant sources of resistance fluctuations in the graphene channel, while Coulomb fluctuation…
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Substrate plays a crucial role in determining transport and low frequency noise behavior of graphene field effect devices. Typically, heavily dope Si/SiO$_2$ substrate is used to fabricate these devices for efficient gating. Trap**-detrap** processes closed to the graphene/substrate interface are the dominant sources of resistance fluctuations in the graphene channel, while Coulomb fluctuations arising due to any remote charge fluctuations inside the bulk of the substrate are effectively screened by the heavily doped substrate. Here, we present electronic transport and low frequency noise characteristics of large area CVD graphene field effect transistor (FET) prepared on a lightly doped Si/SiO$_2$ substrate (N$_A$ $\sim$ 10$^{15}$cm$^{-3}$). Through a systematic characterization of transport, noise and capacitance at various temperature, we reveal that remote Si/SiO$_2$ interface can affect the charge transport in graphene severely and any charge fluctuations inside bulk of the silicon substrate can be sensed by the graphene channel. The resistance (R) vs. back gate voltage (V$_{bg}$) characteristics of the device shows a hump around the depletion region formed at the SiO$_2$/Si interface, confirmed by the capacitance (C) - Voltage (V) measurement. Low frequency noise measurement on these fabricated devices shows a peak in the noise amplitude close to the depletion region. This indicates that due to the absence of any charge layer at Si/SiO$_2$ interface, screening ability decreases and as a consequence, any fluctuations in the deep level coulomb impurities inside the silicon substrate can be observed as a noise in resistance in graphene channel via mobility fluctuations. Noise behavior on ionic liquid gated graphene on the same substrate exhibits no such peak in noise and can be explained by the interfacial trap** - detrap** processes closed to the graphene channel.
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Submitted 18 October, 2022;
originally announced October 2022.
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Surface-phase superconductivity in Mg-deficient V-doped MgTi$_2$O$_4$ spinel
Authors:
A. Rahaman,
T. Paramanik,
B. Pal,
R. Pal,
P. Maji,
K. Bera,
S. Mallik,
D. K. Goswami,
A. N. Pal,
D. Choudhury
Abstract:
Around fifty years ago, LiTi$_2$O$_4$ was reported to be first spinel oxide to exhibit a superconducting transition with highest T$_c$ $\approx$ 13.7 K. Recently, MgTi$_2$O$_4$ has been found to be the only other spinel oxide to reveal a superconducting transition with a T$_c$ $\approx$ 3 K, however, its superconducting state is realized only in thin film superlattices involving SrTiO$_3$. We find…
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Around fifty years ago, LiTi$_2$O$_4$ was reported to be first spinel oxide to exhibit a superconducting transition with highest T$_c$ $\approx$ 13.7 K. Recently, MgTi$_2$O$_4$ has been found to be the only other spinel oxide to reveal a superconducting transition with a T$_c$ $\approx$ 3 K, however, its superconducting state is realized only in thin film superlattices involving SrTiO$_3$. We find that a V-doped Mg$_{1-x}$Ti$_2$O$_4$ phase, which gets stabilized as a thin surface layer on top of stoichiometric and insulating V-doped MgTi$_2$O$_4$ bulk sample, exhibits high-temperature superconductivity with T$_c$ $\approx$ 16 K. The superconducting transition is also confirmed through a concomitant sharp diamagnetic transition immediately below T$_c$. The spinel phase of the superconducting surface layer is elucidated through grazing-incidence X-ray diffraction and Micro-Raman spectroscopy. A small shift of the sharp superconducting transition temperature ($\sim$ 4 K) with application of a high magnetic field (upto 9 Tesla) suggests a very high critical field for the system, $\sim$ 25 Tesla. Thus, V-doped Mg$_{1-x}$Ti$_2$O$_4$ exhibits the highest T$_c$ among spinel superconductors and also possesses a very high critical field.
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Submitted 25 June, 2023; v1 submitted 5 September, 2022;
originally announced September 2022.
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An experimental set up to probe the quantum transport through single atomic/molecular junction at room temperature
Authors:
Biswajit Pabi,
Atindra Nath Pal
Abstract:
Understanding the transport characteristics at the atomic limit is the prerequisite for futuristic nano-electronic applications. Among various experimental procedures, mechanically controllable break junction (MCBJ) is one of the well adopted experimental technique to study and control the atomic or molecular scale devices. Here, we present the details of the development of a piezo controlled tabl…
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Understanding the transport characteristics at the atomic limit is the prerequisite for futuristic nano-electronic applications. Among various experimental procedures, mechanically controllable break junction (MCBJ) is one of the well adopted experimental technique to study and control the atomic or molecular scale devices. Here, we present the details of the development of a piezo controlled table top MCBJ set up, working at ambient condition, along with necessary data acquisition technique and analysis of the data. We performed conductance experiment on a macroscopic gold wire, which exhibits quantized conductance plateau upon pulling the wire with the piezo. Conductance peak up to $\sim 20 G_0$ ($G_0 = 2e^2/h$, $e$ being the electronic charge and $h$ being the plank's constant) could be resolved at room temperature. A well-known test bed molecule,$4, 4^\prime$ bipyridine, was introduced between the gold electrodes and conductance histogram exhibits two distinctive conductance peaks, confirming the formation of single molecular junction, in line with the previous reports. This demonstrate that our custom-designed MCBJ set up is capable of measuring quantum transport of a single molecular junction at ambient condition.
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Submitted 14 July, 2022;
originally announced July 2022.
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High performance Broadband Photodetection Based on Graphene -- MoS$_{2x}$Se$_{2(1-x)}$ Alloy Engineered Phototransistors
Authors:
Shubhrasish Mukherjee,
Didhiti Bhattacharya,
Samit Kumar Ray,
Atindra Nath Pal
Abstract:
The concept of alloy engineering has emerged as a viable technique towards tuning the bandgap as well as engineering the defect levels in two-dimensional transition metal dichalcognides (TMDC). Possibility to synthesize these ultrathin TMDC materials through chemical route has opened realistic possibilities to fabricate hybrid multi-functional devices. By synthesizing nanosheets with different com…
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The concept of alloy engineering has emerged as a viable technique towards tuning the bandgap as well as engineering the defect levels in two-dimensional transition metal dichalcognides (TMDC). Possibility to synthesize these ultrathin TMDC materials through chemical route has opened realistic possibilities to fabricate hybrid multi-functional devices. By synthesizing nanosheets with different composites of MoS$_{2x}$Se$_{2(1-x)}$ (x = 0 to 1) using simple chemical methods, we systematically investigate the photo response properties of three terminal hybrid devices by decorating large area graphene with these nanosheets (x = 0, 0.5, 1) in 2D-2D configurations. Among them, graphene-MoSSe hybrid phototransistor exhibits superior optoelectronic properties than its binary counterparts. The device exhibits extremely high photoresponsivity (>10$^4$ A/W), low noise equivalent power (~10$^{-14}$ W/Hz$^{0.5}$), higher specific detectivity (~ 10$^{11}$ Jones) in the wide UV-NIR (365-810 nm) range with excellent gate tunability. The broadband light absorption of MoSSe, ultrafast charge transport in graphene, along with controllable defect engineering in MoSSe makes this device extremely attractive. Our work demonstrates the large area scalability with wafer-scale production of MoS$_{2x}$Se$_{2(1-x)}$ alloys, having important implication towards facile and scalable fabrication of high-performance optoelectronic devices and providing important insights into the fundamental interactions between van-der-Waals materials.
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Submitted 30 June, 2022;
originally announced June 2022.
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Revisiting the magnetic ordering through anisotropic magnetic entropy change in quasi-two-dimensional metallic ferromagnet, Fe$_4$GeTe$_2$
Authors:
Satyabrata Bera,
Suman Kalyan Pradhan,
Md Salman Khan,
Riju Pal,
Buddhadeb Pal,
Sk Kalimuddin,
Arnab Bera,
Biswajit Das,
Atindra Nath Pal,
Mintu Mondal
Abstract:
We have investigated the nature of ferromagnetic order and phase transitions in two dimensional (2D) van der Waals (vdW) layered material, Fe$_4$GeTe$_2$ through measurements of magnetization, magneto-caloric Effect (MCE), and heat capacity. Fe$_4$GeTe$_2$ hosts a complex magnetic phase with two distinct transitions: paramagnetic to ferromagnetic at around $T_\text{C}$ $\sim$ 266 K and another spi…
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We have investigated the nature of ferromagnetic order and phase transitions in two dimensional (2D) van der Waals (vdW) layered material, Fe$_4$GeTe$_2$ through measurements of magnetization, magneto-caloric Effect (MCE), and heat capacity. Fe$_4$GeTe$_2$ hosts a complex magnetic phase with two distinct transitions: paramagnetic to ferromagnetic at around $T_\text{C}$ $\sim$ 266 K and another spin reorientation transition (SRT) at around $T_\text{SRT}$ $\sim $ 100 K. The magnetization measurements shows a prominent thermal hysteresis in proximity to $T_\text{SRT}$ at $H\parallel c$, which implies the first-order nature of SRT. Reasonable MCE has been observed around both transition temperatures ( at around $T_\text{C}$, -$Δ$S$_M^\text{max}$ = 1.95 and 1.99 J.Kg$^{-1}$K$^{-1}$ and at around $T_\text{SRT}$, -$Δ$S$_M^\text{max}$= 3.9 and 2.4 J.Kg$^{-1}$K$^{-1}$ along $H\parallel ab$ and $H\parallel c$ respectively) at 50 kOe magnetic field change. The above results reveal higher MCE value at $T_\text{SRT}$ compared to the values of MCE at $T_\text{C}$. The scaling analysis of MCE at $T_\text{C}$, shows that the rescaled $Δ$S$_M (T, H)$ follow a universal curve confirming the second-order character of the ferromagnetic transition. The same scaling analysis of MCE breaks down at $T_\text{SRT}$ suggesting that SRT is not a second order phase transition. The exponent $n$ from field dependence of magnetic entropy change presents a maximum of $|n|>2$ confirming the first-order nature of SRT.
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Submitted 25 June, 2022;
originally announced June 2022.
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Superconductivity coexisting with ferromagnetism in a quasi-one dimensional non-centrosymmetric (TaSe$_4$)$_3$I
Authors:
Arnab Bera,
Sirshendu Gayen,
Suchanda Mondal,
Riju Pal,
Buddhadeb Pal,
Aastha Vasdev,
Sandeep Howlader,
Manish Jana,
Tanmay Maiti,
Rafikul Ali Saha,
Biswajit Das,
Biswarup Satpati,
Atindra Nath Pal,
Prabhat Mandal,
Goutam Sheet,
Mintu Mondal
Abstract:
Low-dimensional materials with broken inversion symmetry and strong spin-orbit coupling can give rise to fascinating quantum phases and phase transitions. Here we report coexistence of superconductivity and ferromagnetism below 2.5\,K in the quasi-one dimensional crystals of non-centrosymmetric (TaSe$_4$)$_3$I (space group: $P\bar{4}2_1c$). The unique phase is a direct consequence of inversion sym…
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Low-dimensional materials with broken inversion symmetry and strong spin-orbit coupling can give rise to fascinating quantum phases and phase transitions. Here we report coexistence of superconductivity and ferromagnetism below 2.5\,K in the quasi-one dimensional crystals of non-centrosymmetric (TaSe$_4$)$_3$I (space group: $P\bar{4}2_1c$). The unique phase is a direct consequence of inversion symmetry breaking as the same material also stabilizes in a centro-symmetric structure (space group: $P4/mnc$) where it behaves like a non-magnetic insulator. The coexistence here upfront contradicts the popular belief that superconductivity and ferromagnetism are two apparently antagonistic phenomena. Notably, here, for the first time, we have clearly detected Meissner effect in the superconducting state despite the coexisting ferromagnetic order. The coexistence of superconductivity and ferromagnetism projects non-centrosymmetric (TaSe$_4$)$_3$I as a host for complex ground states of quantum matter including possible unconventional superconductivity with elusive spin-triplet pairing.
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Submitted 30 November, 2021; v1 submitted 29 November, 2021;
originally announced November 2021.
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High Responsivity Gate Tunable UV-Visible Broadband Phototransistor Based on Graphene-WS2 Mixed Dimensional (2D-0D) Heterostructure
Authors:
Shubhrasish Mukherjee,
Didhiti Bhattacharya,
Sumanti Patra,
Sanjukta Paul,
Rajib Kumar Mitra,
Priya Mahadevan,
Atindra Nath Pal,
Samit Kumar Ray
Abstract:
Recent progress in the synthesis of highly stable, eco-friendly, cost-effective transition metal-dichalcogenides (TMDC) quantum dots (QDs) with their broadband absorption spectrum and wavelength selectivity features have led to their increasing use in broadband photodetectors. With the solution based processing, we demonstrate a super large (~ 0.75 mm^2), UV-Vis broadband (365-633 nm), phototransi…
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Recent progress in the synthesis of highly stable, eco-friendly, cost-effective transition metal-dichalcogenides (TMDC) quantum dots (QDs) with their broadband absorption spectrum and wavelength selectivity features have led to their increasing use in broadband photodetectors. With the solution based processing, we demonstrate a super large (~ 0.75 mm^2), UV-Vis broadband (365-633 nm), phototransistor made of WS_2 QDs decorated CVD graphene as active channel with extraordinary stability and durability in ambient condition (without any degradation of photocurrent till 4 months after fabrication). Here, colloidal 0D WS_2-QDs are used as the photo absorbing material and graphene acts as the conducting channel. A high photoresponsivity (3.1 x 10^2 A/W), higher detectivity (2.2 x 10^12 Jones) and low noise equivalent power (4 x 10^{-14} W/Hz^0.5) are obtained at a low bias voltage (V_{ds} = 1V) at an illumination of 365 nm with an optical power as low as 0.8 μW/cm^2, which can further be tuned by modulating the gate bias. While comparing the photocurrent between two different morphologies of WS_2 (QDs and 2D nanosheets), a significant enhancement of photocurrent is observed in case of QDs based device. Ab initio density functional theory based calculations further support our observation, revealing the role of quantum confinement for the enhanced photo response. Our work reveals a strategy towards making a scalable, cost-effective, highly performing hybrid two-dimensional (2D/0D) photo detector with graphene-WS_2 QDs, paving the way towards the next generation optoelectronic applications.
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Submitted 9 November, 2021;
originally announced November 2021.
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Probing Metal-Molecule Contact at the Atomic Scale via Conductance Jump
Authors:
Biswajit Pabi,
Debayan Mondal,
Priya Mahadevan,
Atindra Nath Pal
Abstract:
Understanding the formation of metal-molecule contact at the microscopic level is the key towards controlling and manipulating atomic scale devices. Employing two isomers of bipyridine, $4, 4^\prime$ bipyridine and $2, 2^\prime$ bipyridine between gold electrodes, here, we investigate the formation of metal-molecule bond by studying charge transport through single molecular junctions using a mecha…
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Understanding the formation of metal-molecule contact at the microscopic level is the key towards controlling and manipulating atomic scale devices. Employing two isomers of bipyridine, $4, 4^\prime$ bipyridine and $2, 2^\prime$ bipyridine between gold electrodes, here, we investigate the formation of metal-molecule bond by studying charge transport through single molecular junctions using a mechanically controlled break junction technique at room temperature. While both molecules form molecular junctions during the breaking process, closing traces show the formation of molecular junctions unambiguously for $4, 4^\prime$ bipyridine via a conductance jump from the tunneling regime, referred as `jump to molecular contact', being absent for $2, 2^\prime$ bipyridine. Through statistical analysis of the data, along with, molecular dynamics and first-principles calculations, we establish that contact formation is strongly connected with the molecular structure of the electrodes as well as how the junction is broken during breaking process, providing important insights for using a single-molecule in an electronic device.
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Submitted 9 September, 2021;
originally announced September 2021.
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Non-local transport via edge-states in InAs/GaSb coupled quantum wells
Authors:
Susanne Mueller,
Atindra Nath Pal,
Matija Karalic,
Thomas Tschirky,
Christophe Charpentier,
Werner Wegscheider,
Klaus Ensslin,
Thomas Ihn
Abstract:
We have investigated low-temperature electronic transport on InAs/GaSb double quantum wells, a system which promises to be electrically tunable from a normal to a topological insulator. Hall bars of $50\,μ$m in length down to a few $μ$m gradually develop a pronounced resistance plateau near charge-neutrality, which comes along with distinct non-local transport along the edges. Plateau resistances…
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We have investigated low-temperature electronic transport on InAs/GaSb double quantum wells, a system which promises to be electrically tunable from a normal to a topological insulator. Hall bars of $50\,μ$m in length down to a few $μ$m gradually develop a pronounced resistance plateau near charge-neutrality, which comes along with distinct non-local transport along the edges. Plateau resistances are found to be above or below the quantized value expected for helical edge channels. We discuss these results based on the interplay between imperfect edges and residual local bulk conductivity.
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Submitted 27 April, 2015;
originally announced April 2015.
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Influence of etching processes on electronic transport in mesoscopic InAs/GaSb quantum well devices
Authors:
Atindra Nath Pal,
Susanne Mueller,
Thomas Ihn,
Klaus Ensslin,
Thomas Tschirky,
Christophe Charpentier,
Werner Wegscheider
Abstract:
We report the electronic characterization of mesoscopic Hall bar devices fabricated from coupled InAs/GaSb quantum wells sandwiched between AlSb barriers, an emerging candidate for two-dimensional topological insulators. The electronic width of the etched structures was determined from the low field magneto-resistance peak, a characteristic signature of partially diffusive boundary scattering in t…
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We report the electronic characterization of mesoscopic Hall bar devices fabricated from coupled InAs/GaSb quantum wells sandwiched between AlSb barriers, an emerging candidate for two-dimensional topological insulators. The electronic width of the etched structures was determined from the low field magneto-resistance peak, a characteristic signature of partially diffusive boundary scattering in the ballistic limit. In case of dry-etching the electronic width was found to decrease with electron density. In contrast, for wet etched devices it stayed constant with density. Moreover, the boundary scattering was found to be more specular for wet-etched devices, which may be relevant for studying topological edge states.
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Submitted 3 July, 2015; v1 submitted 24 February, 2015;
originally announced February 2015.
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Fermi-edge transmission resonance in graphene driven by a single Coulomb impurity
Authors:
Paritosh Karnatak,
Srijit Goswami,
Vidya Kochat,
Atindra Nath Pal,
Arindam Ghosh
Abstract:
The interaction between the Fermi sea of conduction electrons and a non-adiabatic attractive impurity potential can lead to a power-law divergence in the tunneling probability of charge through the impurity. The resulting effect, known as the Fermi edge singularity (FES), constitutes one of the most fundamental many-body phenomena in quantum solid state physics. Here we report the first observatio…
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The interaction between the Fermi sea of conduction electrons and a non-adiabatic attractive impurity potential can lead to a power-law divergence in the tunneling probability of charge through the impurity. The resulting effect, known as the Fermi edge singularity (FES), constitutes one of the most fundamental many-body phenomena in quantum solid state physics. Here we report the first observation of FES for Dirac Fermions in graphene driven by isolated Coulomb impurities in the conduction channel. In high-mobility graphene devices on hexagonal boron nitride substrates, the FES manifests in abrupt changes in conductance with a large magnitude $\approx e^{2}/h$ at resonance, indicating total many-body screening of a local Coulomb impurity with fluctuating charge occupancy. Furthermore, we exploit the extreme sensitivity of graphene to individual Coulomb impurities, and demonstrate a new defect-spectroscopy tool to investigate strongly correlated phases in graphene in the quantum Hall regime.
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Submitted 15 June, 2014;
originally announced June 2014.
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Spin-orbit splitting and effective masses in p-type GaAs two-dimensional hole gases
Authors:
Fabrizio Nichele,
Atindra Nath Pal,
Roland Winkler,
Christian Gerl,
Werner Wegscheider,
Thomas Ihn,
Klaus Ensslin
Abstract:
We present magnetotransport measurements performed on two-dimensional hole gases embedded in carbon doped p-type GaAs/AlGaAs heterostructures grown on [001] oriented substrates. A pronounced beating pattern in the Shubnikov-de Haas oscillations proves the presence of strong spin-orbit interaction in the device under study. We estimate the effective masses of spin-orbit split subbands by measuring…
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We present magnetotransport measurements performed on two-dimensional hole gases embedded in carbon doped p-type GaAs/AlGaAs heterostructures grown on [001] oriented substrates. A pronounced beating pattern in the Shubnikov-de Haas oscillations proves the presence of strong spin-orbit interaction in the device under study. We estimate the effective masses of spin-orbit split subbands by measuring the temperature dependence of the Shubnikov-de Haas oscillations at different hole densities. While the lighter heavy-hole effective mass is not energy dependent, the heavier heavy-hole effective mass has a prominent energy dependence, indicating a strong spin-orbit induced non parabolicity of the valence band. The measured effective masses show qualitative agreement with self-consistent numerical calculations.
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Submitted 17 February, 2014; v1 submitted 28 October, 2013;
originally announced October 2013.
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Suppression of bulk conductivity in InAs/GaSb broken gap composite quantum wells
Authors:
Christophe Charpentier,
Stefan Fält,
Christian Reichl,
Fabrizio Nichele,
Atindra Nath Pal,
Patrick Pietsch,
Thomas Ihn,
Klaus Ensslin,
Werner Wegscheider
Abstract:
The two-dimensional topological insulator state in InAs/GaSb quantum wells manifests itself by topologically protected helical edge channel transport relying on an insulating bulk. This work investigates a way of suppressing bulk conductivity by using gallium source materials of different degrees of impurity concentrations. While highest-purity gallium is accompanied by clear conduction through th…
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The two-dimensional topological insulator state in InAs/GaSb quantum wells manifests itself by topologically protected helical edge channel transport relying on an insulating bulk. This work investigates a way of suppressing bulk conductivity by using gallium source materials of different degrees of impurity concentrations. While highest-purity gallium is accompanied by clear conduction through the sample bulk, intentional impurity incorporation lead to a bulk resistance over 1 MΩ. This resistance was found to be independent of applied magnetic fields. Ultra high electron mobilities for GaAs/AlGaAs structures fabricated in a molecular beam epitaxy system used for the growth of Sb-based samples are reported.
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Submitted 16 August, 2013; v1 submitted 15 August, 2013;
originally announced August 2013.
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Insulating state and giant non-local response in an InAs/GaSb quantum well in the quantum Hall regime
Authors:
Fabrizio Nichele,
Atindra Nath Pal,
Patrick Pietsch,
Thomas Ihn,
Klaus Ensslin,
Christophe Charpentier,
Werner Wegscheider
Abstract:
We present transport measurements performed in InAs/GaSb double quantum wells. At the electron-hole crossover tuned by a gate voltage, a strong increase in the longitudinal resistivity is observed with increasing perpendicular magnetic field. Concomitantly with a local resistance exceeding the resistance quantum by an order of magnitude, we find a pronounced non-local resistance signal of almost s…
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We present transport measurements performed in InAs/GaSb double quantum wells. At the electron-hole crossover tuned by a gate voltage, a strong increase in the longitudinal resistivity is observed with increasing perpendicular magnetic field. Concomitantly with a local resistance exceeding the resistance quantum by an order of magnitude, we find a pronounced non-local resistance signal of almost similar magnitude. The co-existence of these two effects is reconciled in a model of counter-propagating and dissipative quantum Hall edge channels providing backscattering, shorted by a residual bulk conductivity.
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Submitted 19 December, 2013; v1 submitted 14 August, 2013;
originally announced August 2013.
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Direct observation of valley-hybridization and universal symmetry of graphene with mesoscopic conductance fluctuations
Authors:
Atindra Nath Pal,
Vidya Kochat,
Arindam Ghosh
Abstract:
In graphene, the valleys represent spin-like quantities and can act as a physical resource in valley-based electronics to novel quantum computation schemes. Here we demonstrate a direct route to tune and read the valley quantum states of disordered graphene by measuring the mesoscopic conductance fluctuations. We show that the conductance fluctuations in graphene at low temperatures are reduced by…
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In graphene, the valleys represent spin-like quantities and can act as a physical resource in valley-based electronics to novel quantum computation schemes. Here we demonstrate a direct route to tune and read the valley quantum states of disordered graphene by measuring the mesoscopic conductance fluctuations. We show that the conductance fluctuations in graphene at low temperatures are reduced by a factor of four when valley triplet states are gapped in the presence of short range potential scatterers at high carrier densities. We also show that this implies a gate tunable universal symmetry class which outlines a fundamental feature arising from graphene's unique crystal structure.
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Submitted 18 June, 2012;
originally announced June 2012.
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High contrast imaging and thickness determination of graphene with in-column secondary electron microscopy
Authors:
Vidya Kochat,
Atindra Nath Pal,
Sneha E. S.,
Arjun B. S.,
Anshita Gairola,
S. A. Shivashankar,
Srinivasan Raghavan,
Arindam Ghosh
Abstract:
We report a new method for quantitative estimation of graphene layer thicknesses using high contrast imaging of graphene films on insulating substrates with a scanning electron microscope. By detecting the attenuation of secondary electrons emitted from the substrate with an in-column low-energy electron detector, we have achieved very high thickness-dependent contrast that allows quantitative est…
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We report a new method for quantitative estimation of graphene layer thicknesses using high contrast imaging of graphene films on insulating substrates with a scanning electron microscope. By detecting the attenuation of secondary electrons emitted from the substrate with an in-column low-energy electron detector, we have achieved very high thickness-dependent contrast that allows quantitative estimation of thickness up to several graphene layers. The nanometer scale spatial resolution of the electron micrographs also allows a simple structural characterization scheme for graphene, which has been applied to identify faults, wrinkles, voids, and patches of multilayer growth in large-area chemical vapor deposited graphene. We have discussed the factors, such as differential surface charging and electron beam induced current, that affect the contrast of graphene images in detail.
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Submitted 27 March, 2012;
originally announced March 2012.
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The Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors
Authors:
Subhamoy Ghatak,
Atindra Nath Pal,
Arindam Ghosh
Abstract:
We present low temperature electrical transport experiments in five field effect transistor devices consisting of monolayer, bilayer and trilayer MoS2 films, mechanically exfoliated onto Si/SiO2 substrate. Our experiments reveal that the electronic states in all films are localized well up to the room temperature over the experimentally accessible range of gate voltage. This manifests in two dimen…
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We present low temperature electrical transport experiments in five field effect transistor devices consisting of monolayer, bilayer and trilayer MoS2 films, mechanically exfoliated onto Si/SiO2 substrate. Our experiments reveal that the electronic states in all films are localized well up to the room temperature over the experimentally accessible range of gate voltage. This manifests in two dimensional (2D) variable range hop** (VRH) at high temperatures, while below \sim 30 K the conductivity displays oscillatory structures in gate voltage arising from resonant tunneling at the localized sites. From the correlation energy (T0) of VRH and gate voltage dependence of conductivity, we suggest that Coulomb potential from trapped charges in the substrate are the dominant source of disorder in MoS2 field effect devices, which leads to carrier localization as well.
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Submitted 26 March, 2012;
originally announced March 2012.
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1/f noise as a probe for investigating band structure in graphene
Authors:
Atindra Nath Pal,
Subhamoy Ghatak,
Vidya Kochat,
Sneha E. S.,
Arjun B. S.,
Srinivasan Raghavan,
Arindam Ghosh
Abstract:
A distinctive feature of single layer graphene is the linearly dispersive energy bands, which in case of multilayer graphene become parabolic. Other than the quantum Hall effect, this distinction has been hard to capture in electron transport. Carrier mobility of graphene has been scrutinized, but many parallel scattering mechanisms often obscure its sensitivity to band structure. The flicker nois…
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A distinctive feature of single layer graphene is the linearly dispersive energy bands, which in case of multilayer graphene become parabolic. Other than the quantum Hall effect, this distinction has been hard to capture in electron transport. Carrier mobility of graphene has been scrutinized, but many parallel scattering mechanisms often obscure its sensitivity to band structure. The flicker noise in graphene depends explicitly on its ability to screen local potential fluctuations. Here we show that the flicker noise is a sensitive probe to the band structure of graphene that vary differently with the carrier density for the linear and parabolic bands. Using devices of different genre, we find this difference to be robust against disorder in the presence or absence of substrate. Our results reveal the microscopic mechanism of noise in Graphene Field Effect Transistors (GraFET), and outline a simple portable method to separate the single from multi layered devices.
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Submitted 30 September, 2010; v1 submitted 29 September, 2010;
originally announced September 2010.
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Large low-frequency resistance noise in chemical vapor deposited graphene
Authors:
Atindra Nath Pal,
Ageeth A. Bol,
Arindam Ghosh
Abstract:
We report a detailed investigation of resistance noise in single layer graphene films on Si/SiO$_2$ substrates obtained by chemical vapor deposition (CVD) on copper foils. We find that noise in these systems to be rather large, and when expressed in the form of phenomenological Hooge equation, it corresponds to Hooge parameter as large as $0.1 - 0.5$. We also find the variation in the noise magnit…
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We report a detailed investigation of resistance noise in single layer graphene films on Si/SiO$_2$ substrates obtained by chemical vapor deposition (CVD) on copper foils. We find that noise in these systems to be rather large, and when expressed in the form of phenomenological Hooge equation, it corresponds to Hooge parameter as large as $0.1 - 0.5$. We also find the variation in the noise magnitude with the gate voltage (or carrier density) and temperature to be surprisingly weak, which is also unlike the behavior of noise in other forms of graphene, in particular those from exfoliation.
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Submitted 5 October, 2010; v1 submitted 8 June, 2010;
originally announced June 2010.
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Ultra-low noise field-effect transistor from multilayer graphene
Authors:
Atindra Nath Pal,
Arindam Ghosh
Abstract:
We present low-frequency electrical resistance fluctuations, or noise, in graphene-based field-effect devices with varying number of layers. In single-layer devices the noise magnitude decreases with increasing carrier density, which behaved oppositely in the devices with two or larger number of layers accompanied by a suppression in noise magnitude by more than two orders in the latter case. Th…
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We present low-frequency electrical resistance fluctuations, or noise, in graphene-based field-effect devices with varying number of layers. In single-layer devices the noise magnitude decreases with increasing carrier density, which behaved oppositely in the devices with two or larger number of layers accompanied by a suppression in noise magnitude by more than two orders in the latter case. This behavior can be explained from the influence of external electric field on graphene band structure, and provides a simple transport-based route to isolate single-layer graphene devices from those with multiple layers.
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Submitted 27 May, 2009;
originally announced May 2009.
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Resistance noise in electrically biased bilayer graphene
Authors:
Atindra Nath Pal,
Arindam Ghosh
Abstract:
We demonstrate that the low-frequency resistance fluctuations, or noise, in bilayer graphene is strongly connected to its band structure, and displays a minimum when the gap between the conduction and valence band is zero. Using double-gated bilayer graphene devices we have tuned the zero gap and charge neutrality points independently, which offers a versatile mechanism to investigate the low-en…
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We demonstrate that the low-frequency resistance fluctuations, or noise, in bilayer graphene is strongly connected to its band structure, and displays a minimum when the gap between the conduction and valence band is zero. Using double-gated bilayer graphene devices we have tuned the zero gap and charge neutrality points independently, which offers a versatile mechanism to investigate the low-energy band structure, charge localization and screening properties of bilayer graphene.
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Submitted 16 December, 2008;
originally announced December 2008.
