Investigation of domain wall pinning by square anti-notches and its applications in three terminals MRAM
Authors:
C. I. L. de Araujo,
J. C. S. Gomes,
D. Toscano,
E. L. M. Paixao,
P. Z. Coura,
F. Sato,
D. V. P. Massote,
S. A. Leonel
Abstract:
In this work we perform investigations of the competition between domain-wall pinning and attraction by anti-notches and finite device borders. The conditions for optimal geometries, which can attain a stable domain-wall pinning, are presented. This allow us the proposition of a three-terminals device based on domain-wall pinning. We obtain, with very small pulses of current applied parallel to th…
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In this work we perform investigations of the competition between domain-wall pinning and attraction by anti-notches and finite device borders. The conditions for optimal geometries, which can attain a stable domain-wall pinning, are presented. This allow us the proposition of a three-terminals device based on domain-wall pinning. We obtain, with very small pulses of current applied parallel to the nanotrack, a fast motion of the domain-wall between anti-notches. In addition to this, a swift stabilization of the pinned domain-wall is observed with a high percentage of orthogonal magnetization, enabling high magnetoresistive signal measurement. Thus, our proposed device is a promising magnetoresistive random access memories with good scalability, duration, and high speed information storage.
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Submitted 11 May, 2019;
originally announced May 2019.
