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Bismuth layer properties in the ultrathin Bi-FeNi multilayer films probed by spectroscopic ellipsometry
Authors:
N. N. Kovaleva,
D. Chvostova,
O. Pacherova,
A. V. Muratov,
L. Fekete,
I. A. Sherstnev,
K. I. Kugel,
F. A. Pudonin,
A. Dejneka
Abstract:
Using wide-band (0.5-6.5 eV) spectroscopic ellipsometry we study ultrathin [Bi(0.6-2.5 nm)-FeNi(0.8,1.2 nm)]N multilayer films grown by rf sputtering deposition, where the FeNi layer has a nanoisland structure and its morphology and magnetic properties change with decreasing the nominal layer thickness. From the multilayer model simulations of the ellipsometric angles, Psi(omega) and Delta(omega),…
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Using wide-band (0.5-6.5 eV) spectroscopic ellipsometry we study ultrathin [Bi(0.6-2.5 nm)-FeNi(0.8,1.2 nm)]N multilayer films grown by rf sputtering deposition, where the FeNi layer has a nanoisland structure and its morphology and magnetic properties change with decreasing the nominal layer thickness. From the multilayer model simulations of the ellipsometric angles, Psi(omega) and Delta(omega), the complex (pseudo)dielectric function spectra of the Bi layer were extracted. The obtained results demonstrate that the Bi layer can possess the surface metallic conductivity, which is strongly affected by the morphology and magnetic properties of the nanoisland FeNi layer in the GMR-type Bi-FeNi multilayer structures.
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Submitted 12 January, 2023;
originally announced January 2023.
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Localization effects in the disordered Ta interlayer of multilayer Ta-FeNi films: Evidence from dc transport and spectroscopic ellipsometry study
Authors:
N. N. Kovaleva,
D. Chvostova,
O. Pacherova,
L. Fekete,
K. I. Kugel,
F. A. Pudonin,
A. Dejneka
Abstract:
Using dc transport and wide-band spectroscopic ellipsometry techniques, we study localization effects in the disordered metallic Ta interlayer of different thickness in the multilayer films (MLFs) (Ta - FeNi)_N grown by rf sputtering deposition. In the grown MLFs, the FeNi layer was 0.52 nm thick, while the Ta layer thickness varied between 1.2 and 4.6 nm. The Ta layer dielectric function was extr…
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Using dc transport and wide-band spectroscopic ellipsometry techniques, we study localization effects in the disordered metallic Ta interlayer of different thickness in the multilayer films (MLFs) (Ta - FeNi)_N grown by rf sputtering deposition. In the grown MLFs, the FeNi layer was 0.52 nm thick, while the Ta layer thickness varied between 1.2 and 4.6 nm. The Ta layer dielectric function was extracted from the Drude-Lorentz simulation. The dc transport study of the MLFs implies non-metallic (dr/dT<0) behavior, with negative temperature coefficient of resistivity (TCR). The TCR absolute value increases upon increasing the Ta interlayer thickness, indicating enhanced electron localization. With that, the free charge carrier Drude response decreases. Moreover, the pronounced changes occur at the extended spectral range, involving the higher-energy Lorentz bands. The Drude dc conductivity drops below the weak localization limit for the thick Ta layer. The global band structure reconstruction may indicate the formation of a nearly localized many-body electron state.
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Submitted 21 December, 2021;
originally announced December 2021.
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Control of Mooij correlations at the nanoscale in the disordered metallic Ta - nanoisland FeNi multilayers
Authors:
N. N. Kovaleva,
F. V. Kusmartsev,
A. B. Mekhiya,
I. N. Trunkin,
D. Chvostova,
A. B. Davydov,
L. N. Oveshnikov,
O. Pacherova,
I. A. Sherstnev,
A. Kusmartseva,
K. I. Kugel,
A. Dejneka,
F. A. Pudonin,
Y. Luo,
B. A. Aronzon
Abstract:
Localisation phenomena in highly disordered metals close to the extreme conditions determined by the Mott-Ioffe-Regel (MIR) limit when the electron mean free path is approximately equal to the interatomic distance is a challenging problem. Here, to shed light on these localisation phenomena, we studied the dc transport and optical conductivity properties of nanoscaled multilayered films composed o…
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Localisation phenomena in highly disordered metals close to the extreme conditions determined by the Mott-Ioffe-Regel (MIR) limit when the electron mean free path is approximately equal to the interatomic distance is a challenging problem. Here, to shed light on these localisation phenomena, we studied the dc transport and optical conductivity properties of nanoscaled multilayered films composed of disordered metallic Ta and magnetic FeNi nanoisland layers, where ferromagnetic FeNi nanoislands have giant magnetic moments of 10^3-10^5 Bohr magnetons (μ_B). In these multilayered structures, FeNi nanoisland giant magnetic moments are interacting due to the indirect exchange forces acting via the Ta electron subsystem. We discovered that the localisation phenomena in the disordered Ta layer lead to a decrease in the Drude contribution of free charge carriers and the appearance of the low-energy electronic excitations in the 1-2 eV spectral range characteristic of electronic correlations, which may accompany the formation of electronic inhomogeneities. From the consistent results of the dc transport and optical studies we found that with an increase in the FeNi layer thickness across the percolation threshold evolution from the superferromagnetic to ferromagnetic behaviour within the FeNi layer leads to the delocalisation of Ta electrons from the associated localised electronic states. On the contrary, we discovered that when the FeNi layer is discontinuous and represented by randomly distributed superparamagnetic FeNi nanoislands, the Ta layer normalized dc conductivity falls down below the MIR limit by about 60%. The discovered effect leading to the dc conductivity fall below the MIR limit can be associated with non-ergodicity and purely quantum (many-body) localisation phenomena, which need to be challenged further.
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Submitted 8 December, 2020; v1 submitted 22 August, 2020;
originally announced August 2020.
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Spin-phonon interaction increased by compressive strain in antiferromagnetic MnO thin films
Authors:
Alireza Kashir,
Veronica Goian,
Oliva Pacherova,
Yoon Hee Jeong,
Gil-Ho Lee,
Stanislav Kamba
Abstract:
MnO thin films with various thicknesses and strains were grown on MgO substrates by pulsed laser deposition, then characterized using x-ray diffraction and infrared reflectance spectroscopy. Films grown on (001)-oriented MgO substrates exhibit homogenous biaxial compressive strain which increases as the film thickness is reduced. For that reason, the frequency of doubly-degenerate phonon increases…
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MnO thin films with various thicknesses and strains were grown on MgO substrates by pulsed laser deposition, then characterized using x-ray diffraction and infrared reflectance spectroscopy. Films grown on (001)-oriented MgO substrates exhibit homogenous biaxial compressive strain which increases as the film thickness is reduced. For that reason, the frequency of doubly-degenerate phonon increases with the strain, and splits below Néel temperature TN due to the magnetic-exchange interaction. Films grown on (110)-oriented MgO substrates exhibit a huge phonon splitting already at room temperature due to the anisotropic in-plane compressive strain. Below TN, additional phonon is activated in the IR spectra; this trend is evidence for a spin-order-induced structural phase transition from tetragonal to monoclinic phase. Total phonon splitting is 55 cm-1 in (110)-oriented MnO film, which is more than twice the value in bulk MnO. This result is evidence that the nearest neighbor exchange interaction, which is responsible for the magnetically driven phonon splitting, is greatly increased in compressively strained films.
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Submitted 17 June, 2019;
originally announced June 2019.
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Thermally induced changes of structure in Ni$_{50}$Mn$_{25+x}$Ga$_{25-x}$ magnetic shape memory single crystals with very low twinning stress
Authors:
Ladislav Straka,
Jan Drahokoupil,
Oliva Pacherová,
Kristina Richterová,
Vít Kopecký,
Hannu Hänninen,
Oleg Heczko
Abstract:
In search for the origins of the extraordinary low twinning stress of Ni-Mn-Ga magnetic shape memory alloys we studied the thermally induced changes of structure in Ni$_{50}$Mn$_{25+x}$Ga$_{25-x}$ ($x$=2.7--3.9) single crystal samples and compared them with twinning stress dependences. The alloys exhibited transformation to five-layered (10M) martensite structure between 297 to 328 K. All samples…
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In search for the origins of the extraordinary low twinning stress of Ni-Mn-Ga magnetic shape memory alloys we studied the thermally induced changes of structure in Ni$_{50}$Mn$_{25+x}$Ga$_{25-x}$ ($x$=2.7--3.9) single crystal samples and compared them with twinning stress dependences. The alloys exhibited transformation to five-layered (10M) martensite structure between 297 to 328 K. All samples exhibited magnetic shape memory effect. Just below the transformation temperature the samples had very low twinning stress of about 0.1--0.3 MPa, which increased with decreasing temperature. The structural changes were monitored using X-ray diffraction in the temperature range 173--343 K. The 10M structure was approximated by monoclinic lattice with the unit cell derived from the cubic unit cell of the parent L2$_{1}$ phase. With decreasing temperature, the lattice parameters $a$ and $γ$ increased, $c$ decreased, while $b$ was nearly constant. For $x\leq3.5$, sudden sharp changes in $a$ and $b$ parameters additionally occurred, resulting in $a=b$ in some regions of the phase diagram, which might be related to the refinement of twin structure of 10M martensite on nanoscale. The temperature dependences of lattice parameter $γ$ (and $c$ or $c/a$) correlate well with the temperature dependences of twinning stress in agreement with the prediction by a microstructural model of twin boundary motion. On the contrary, there is no correlation between $(a-b)$ and twinning stress. This indicates no significant role of $a/b$ twins or laminate in twin boundary motion mechanism and low twinning stress.
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Submitted 6 November, 2014;
originally announced November 2014.
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Strong spin-phonon coupling in infrared and Raman spectra of SrMnO3
Authors:
S. Kamba,
V. Goian,
V. Skoromets,
J. Hejtmanek,
V. Bovtun,
M. Kempa,
F. Borodavka,
P. Vanek,
A. A. Belik,
J. H. Lee,
O. Pacherova,
K. M. Rabe
Abstract:
Infrared reflectivity spectra of cubic SrMnO$_{3}$ ceramics reveal 18 % stiffening of the lowest-frequency phonon below the antiferromagnetic phase transition occurring at T$_{N}$ = 233 K. Such a large temperature change of the polar phonon frequency is extraordinary and we attribute it to an exceptionally strong spin-phonon coupling in this material. This is consistent with our prediction from fi…
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Infrared reflectivity spectra of cubic SrMnO$_{3}$ ceramics reveal 18 % stiffening of the lowest-frequency phonon below the antiferromagnetic phase transition occurring at T$_{N}$ = 233 K. Such a large temperature change of the polar phonon frequency is extraordinary and we attribute it to an exceptionally strong spin-phonon coupling in this material. This is consistent with our prediction from first principles calculations. Moreover, polar phonons become Raman active below T$_{N}$, although their activation is forbidden by symmetry in $Pm\bar{3}m$ space group. This gives evidence that the cubic $Pm\bar{3}m$ symmetry is locally broken below T$_{N}$ due to a strong magnetoelectric coupling. Multiphonon and multimagnon scattering is also observed in Raman spectra. Microwave and THz permittivity is strongly influenced by hop** electronic conductivity, which is caused by small non-stoichiometry of the sample. Thermoelectric measurements show room-temperature concentration of free carriers $n_{e}=$3.6 10$^{20}$ cm$^{-3}$ and the sample composition Sr$^{2+}$Mn$_{0.98}^{4+}$Mn$_{0.02}^{3+}$O$_{2.99}^{2-}$. The conductivity exhibits very unusual temperature behavior: THz conductivity increases on cooling, while the static conductivity markedly decreases on cooling. We attribute this to different conductivity of the ceramic grains and grain boundaries.
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Submitted 10 February, 2014;
originally announced February 2014.
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Antiferrodistortive phase transition in EuTiO3
Authors:
V. Goian,
S. Kamba,
O. Pacherova,
J. Drahokoupil,
L. Palatinus,
M. Dusek,
J. Rohlicek,
M. Savinov,
F. Laufek,
W. Schranz,
A. Fuith,
M. Kachlik,
K. Maca,
A. Shkabko,
L. Sagarna,
A. Weidenkaff,
A. A. Belik
Abstract:
X-ray diffraction, dynamical mechanical analysis and infrared reflectivity studies revealed an antiferrodistortive phase transition in EuTiO3 ceramics. Near 300K the perovskite structure changes from cubic Pm-3m to tetragonal I4/mcm due to antiphase tilting of oxygen octahedra along the c axis (a0a0c- in Glazer notation). The phase transition is analogous to SrTiO3. However, some ceramics as well…
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X-ray diffraction, dynamical mechanical analysis and infrared reflectivity studies revealed an antiferrodistortive phase transition in EuTiO3 ceramics. Near 300K the perovskite structure changes from cubic Pm-3m to tetragonal I4/mcm due to antiphase tilting of oxygen octahedra along the c axis (a0a0c- in Glazer notation). The phase transition is analogous to SrTiO3. However, some ceramics as well as single crystals of EuTiO3 show different infrared reflectivity spectra bringing evidence of a different crystal structure. In such samples electron diffraction revealed an incommensurate tetragonal structure with modulation wavevector q ~ 0.38 a*. Extra phonons in samples with modulated structure are activated in the IR spectra due to folding of the Brillouin zone. We propose that defects like Eu3+ and oxygen vacancies strongly influence the temperature of the phase transition to antiferrodistortive phase as well as the tendency to incommensurate modulation in EuTiO3.
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Submitted 10 August, 2012; v1 submitted 19 June, 2012;
originally announced June 2012.
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Detection of stacking faults breaking the [110]/[1-10] symmetry in ferromagnetic semiconductors (Ga,Mn)As and (Ga,Mn)(As,P)
Authors:
M. Kopecky,
J. Kub,
F. Maca,
J. Masek,
O. Pacherova,
B. L. Gallagher,
R. P. Campion,
V. Novak,
T. Jungwirth
Abstract:
We report high resolution x-ray diffraction measurements of (Ga,Mn)As and (Ga,Mn)(As,P) epilayers. We observe a structural anisotropy in the form of stacking faults which are present in the (111) and (11-1) planes and absent in the (-111) and (1-11) planes. The stacking faults produce no macroscopic strain. They occupy 0.01 - 0.1 per cent of the epilayer volume. Full-potential density functional c…
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We report high resolution x-ray diffraction measurements of (Ga,Mn)As and (Ga,Mn)(As,P) epilayers. We observe a structural anisotropy in the form of stacking faults which are present in the (111) and (11-1) planes and absent in the (-111) and (1-11) planes. The stacking faults produce no macroscopic strain. They occupy 0.01 - 0.1 per cent of the epilayer volume. Full-potential density functional calculations evidence an attraction of Mn_Ga impurities to the stacking faults. We argue that the enhanced Mn density along the common [1-10] direction of the stacking fault planes produces sufficiently strong [110]/[1-10] symmetry breaking mechanism to account for the in-plane uniaxial magnetocrystalline anisotropy of these ferromagnetic semiconductors.
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Submitted 21 December, 2010;
originally announced December 2010.
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Mn incorporation in as-grown and annealed (Ga,Mn)As layers studied by x-ray diffraction and standing-wave uorescence
Authors:
V. Holy,
Z. Matej,
O. Pacherova,
V. Novak,
M. Cukr,
K. Olejnik,
T. Jungwirth
Abstract:
A combination of high-resolution x-ray diffraction and a new technique of x-ray standing wave uorescence at grazing incidence is employed to study the structure of (Ga,Mn)As diluted magnetic semiconductor and its changes during post-growth annealing steps. We find that the film is formed by a uniform, single crystallographic phase epilayer covered by a thin surface layer with enhanced Mn concent…
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A combination of high-resolution x-ray diffraction and a new technique of x-ray standing wave uorescence at grazing incidence is employed to study the structure of (Ga,Mn)As diluted magnetic semiconductor and its changes during post-growth annealing steps. We find that the film is formed by a uniform, single crystallographic phase epilayer covered by a thin surface layer with enhanced Mn concentration due to Mn atoms at random non-crystallographic positions. In the epilayer, Mn incorporated at interstitial position has a dominant effect on lattice expansion as compared to substitutional Mn. The expansion coeffcient of interstitial Mn estimated from our data is consistent with theory predictions. The concentration of interstitial Mn and the corresponding lattice expansion of the epilayer are reduced by annealing, accompanied by an increase of the density of randomly distributed Mn atoms in the disordered surface layer. Substitutional Mn atoms remain stable during the low-temperature annealing.
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Submitted 7 September, 2006;
originally announced September 2006.
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Magnetoresistance oscillations in GaAs/AlGaAs superlattices subject to in-plane magnetic fields
Authors:
L. Smrčka,
P. Vašek,
P. Svoboda,
N. A. Goncharuk,
O. Pacherová,
Yu. Krupko,
Y. Sheikin
Abstract:
The MBE-grown GaAs/AlGaAs superlattice with Si-doped barriers has been used to study a 3D-2D transition under the influence of the in-plane component of applied magnetic field. The longitudinal magnetoresistance data measured in tilted magnetic fields have been interpreted in terms of a simple tight-binding model. The data provide values of basic parameters of the model and make it possible to r…
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The MBE-grown GaAs/AlGaAs superlattice with Si-doped barriers has been used to study a 3D-2D transition under the influence of the in-plane component of applied magnetic field. The longitudinal magnetoresistance data measured in tilted magnetic fields have been interpreted in terms of a simple tight-binding model. The data provide values of basic parameters of the model and make it possible to reconstruct the superlattice Fermi surface and to calculate the density of states for the lowest Landau subbands. Positions of van Hove singularities in the DOS agree excellently with magnetoresistance oscillations, confirming that the model describes adequately the magnetoresistance of strongly coupled semiconductor superlattices.
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Submitted 14 October, 2005;
originally announced October 2005.
