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Stabilizing perpendicular magnetic anisotropy with strong exchange bias in PtMn/Co by magneto-ionics
Authors:
Beatrice Bednarz,
Maria-Andromachi Syskaki,
Rohit Pachat,
Leon Prädel,
Martin Wortmann,
Timo Kuschel,
Shimpei Ono,
Mathias Kläui,
Liza Herrera Diez,
Gerhard Jakob
Abstract:
Electric field control of magnetic properties offers a broad and promising toolbox for enabling ultra-low power electronics. A key challenge with high technological relevance is to master the interplay between the magnetic anisotropy of a ferromagnet and the exchange coupling to an adjacent antiferromagnet. Here, we demonstrate that magneto-ionic gating can be used to achieve a very stable out-of-…
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Electric field control of magnetic properties offers a broad and promising toolbox for enabling ultra-low power electronics. A key challenge with high technological relevance is to master the interplay between the magnetic anisotropy of a ferromagnet and the exchange coupling to an adjacent antiferromagnet. Here, we demonstrate that magneto-ionic gating can be used to achieve a very stable out-of-plane (OOP) oriented magnetization with strong exchange bias in samples with as-deposited preferred in-plane (IP) magnetization. We show that the perpendicular interfacial anisotropy can be increased by more than a factor 2 in the stack Ta/Pt/PtMn/Co/HfO2 by applying -2.5 V gate voltage over 3 nm HfO2, causing a reorientation of the magnetization from IP to OOP with a strong OOP exchange bias of more than 50 mT. Comparing two thicknesses of PtMn, we identify a notable trade-off: while thicker PtMn yields a significantly larger exchange bias, it also results in a slower response to ionic liquid gating within the accessible gate voltage window. These results pave the way for post-deposition electrical tailoring of magnetic anisotropy and exchange bias in samples requiring significant exchange bias.
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Submitted 7 June, 2024; v1 submitted 12 April, 2024;
originally announced April 2024.
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Magneto-ionic modulation of the interlayer exchange interaction in synthetic antiferromagnets
Authors:
Maria-Andromachi Syskaki,
Takaaki Dohi,
Sergei Olegovich Filnov,
Sergey Alexeyevich Kasatikov,
Beatrice Bednarz,
Alevtina Smekhova,
Florian Kronast,
Mona Bhukta,
Rohit Pachat,
Johannes Wilhelmus van der Jagt,
Shimpei Ono,
Dafiné Ravelosona Ramasitera,
Jürgen Langer,
Mathias Kläui,
Liza Herrera Diez,
Gerhard Jakob
Abstract:
The electric-field control of magnetism is a highly promising and potentially effective approach for achieving energy-efficient applications. In recent times, there has been significant interest in the magneto-ionic effect in synthetic antiferromagnets, primarily due to its strong potential in the realization of high-density storage devices with ultra-low power consumption. However, the underlying…
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The electric-field control of magnetism is a highly promising and potentially effective approach for achieving energy-efficient applications. In recent times, there has been significant interest in the magneto-ionic effect in synthetic antiferromagnets, primarily due to its strong potential in the realization of high-density storage devices with ultra-low power consumption. However, the underlying mechanism responsible for the magneto-ionic effect on the interlayer exchange coupling (IEC) remains elusive. In this study, we have successfully identified that the magneto-ionic control of the properties of the top ferromagnetic layer of the synthetic antiferromagnet (SyAFM), which is in contact with the high ion mobility oxide, plays a pivotal role in driving the observed gate-induced changes to the IEC. Our findings provide crucial insights into the intricate interplay between stack structure and magnetoionic-field effect on magnetic properties in synthetic antiferromagnetic thin film systems.
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Submitted 16 June, 2023;
originally announced June 2023.
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Ab-initio study of magneto-ionic mechanisms in ferromagnet/oxide multilayers
Authors:
Adriano Di Pietro,
Rohit Pachat,
Liza Herrera Diez,
Johannes W. van der Jagt,
Dafiné Ravelosona,
Gianfranco Durin
Abstract:
The application of gate voltages in heavy metal/ferromagnet/Oxide multilayer stacks has been identified as one possible candidate to manipulate their anisotropy at will. However, this method has proven to show a wide variety of behaviours in terms of reversibility, depending on the nature of the metal/oxide interface and its degree of oxidation. In order to shed light on the microscopic mechanism…
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The application of gate voltages in heavy metal/ferromagnet/Oxide multilayer stacks has been identified as one possible candidate to manipulate their anisotropy at will. However, this method has proven to show a wide variety of behaviours in terms of reversibility, depending on the nature of the metal/oxide interface and its degree of oxidation. In order to shed light on the microscopic mechanism governing the complex magneto-ionic behaviour in $\text{Ta/CoFeB/}\text{HfO}_2$, we perform ab-initio simulations on various setups comprising $\text{Fe/O, Fe/HfO}_2$ interfaces with different oxygen atom interfacial geometries. After the determination of the more stable interfacial configurations, we calculate the magnetic anisotropy energy on the different unit cell configurations and formulate a possible mechanism that well describes the recent experimental observations in $\text{Ta/CoFeB/}\text{HfO}_2$.
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Submitted 25 April, 2022;
originally announced April 2022.
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Multiple magneto-ionic regimes in Ta/Co$_{20}$Fe$_{60}$B$_{20}$/HfO$_{2}$
Authors:
R. Pachat,
D. Ourdani,
J. W. van der Jagt,
M. -A. Syskaki,
A. Di Pietro,
Y. Roussigné,
S. Ono,
M. S. Gabor,
M. Chérif,
G. Durin,
J. Langer,
M. Belmeguenai,
D. Ravelosona,
L. Herrera Diez
Abstract:
In Ta/CoFeB/HfO2 stacks a gate voltage drives, in a nonvolatile way, the system from an underoxidized state exhibiting in-plane anisotropy (IPA) to an optimum oxidation level resulting in perpendicular anisotropy (PMA) and further into an overoxidized state with IPA. The IPA$\,\to\,$PMA regime is found to be significantly faster than the PMA$\,\to\,$IPA regime, while only the latter shows full rev…
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In Ta/CoFeB/HfO2 stacks a gate voltage drives, in a nonvolatile way, the system from an underoxidized state exhibiting in-plane anisotropy (IPA) to an optimum oxidation level resulting in perpendicular anisotropy (PMA) and further into an overoxidized state with IPA. The IPA$\,\to\,$PMA regime is found to be significantly faster than the PMA$\,\to\,$IPA regime, while only the latter shows full reversibility under the same gate voltages. The effective dam** parameter also shows a marked dependence with gate voltage in the IPA$\,\to\,$PMA regime, going from 0.029 to 0.012, and only a modest increase to 0.014 in the PMA$\,\to\,$IPA regime. The existence of two magneto-ionic regimes has been linked to a difference in the chemical environment of the anchoring points of oxygen species added to underoxidized or overoxidized layers. Our results show that multiple magneto-ionic regimes can exist in a single device and that their characterization is of great importance for the design of high performance spintronics devices.
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Submitted 12 May, 2021;
originally announced May 2021.
