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Topological Signatures in Nodal Semimetals through Neutron Scattering
Authors:
Thanh Nguyen,
Yoichiro Tsurimaki,
Ricardo Pablo-Pedro,
Grigory Bednik,
Tongtong Liu,
Anuj Apte,
Nina Andrejevic,
Mingda Li
Abstract:
Topological nodal semimetals are known to host a variety of fascinating electronic properties due to the topological protection of the band-touching nodes. Neutron scattering, despite its power in probing elementary excitations, has not been routinely applied to topological semimetals, mainly due to the lack of an explicit connection between the neutron response and the signature of topology. In t…
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Topological nodal semimetals are known to host a variety of fascinating electronic properties due to the topological protection of the band-touching nodes. Neutron scattering, despite its power in probing elementary excitations, has not been routinely applied to topological semimetals, mainly due to the lack of an explicit connection between the neutron response and the signature of topology. In this work, we theoretically investigate the role that neutron scattering can play to unveil the topological nodal features: a large magnetic neutron response with spectral non-analyticity can be generated solely from the nodal bands. A new formula for the dynamical structure factor for generic topological nodal metals is derived. For Weyl semimetals, we show that the locations of Weyl nodes, the Fermi velocities and the signature of chiral anomaly can all leave hallmark neutron spectral responses. Our work offers a neutron-based avenue towards probing bulk topological materials.
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Submitted 10 January, 2022; v1 submitted 11 January, 2021;
originally announced January 2021.
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Understanding disorder in 2D materials: the case of carbon do** of Silicene
Authors:
Ricardo Pablo-Pedro,
Miguel Angel Magana-Fuentes,
Marcelo Videa,
**g Kong,
Mingda Li,
Jose L. Mendoza-Cortes,
Troy Van Voorhis
Abstract:
We investigate the effect of lattice disorder and local correlation effects in finite and periodic silicene structures caused by carbon do** using first-principles calculations. For both finite and periodic silicene structures, the electronic properties carbon-doped monolayers are dramatically changed by controlling the do** sites in the structures, which is related to the amount of disorder i…
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We investigate the effect of lattice disorder and local correlation effects in finite and periodic silicene structures caused by carbon do** using first-principles calculations. For both finite and periodic silicene structures, the electronic properties carbon-doped monolayers are dramatically changed by controlling the do** sites in the structures, which is related to the amount of disorder introduced in the lattice and electron-electron correlation effects. By changing the position of the carbon dopants, we found that a Mott-Anderson transition is achieved. Moreover, the band gap is determined by the level of lattice disorder and electronic correlation effects. Finally, these structures are ferromagnetic even under disorder which has potential applications in Si-based nanoelectronics, such as field-effect transistors (FETs).
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Submitted 15 August, 2020; v1 submitted 1 December, 2019;
originally announced December 2019.
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Topological Singularity Induced Chiral Kohn Anomaly in a Weyl Semimetal
Authors:
Thanh Nguyen,
Fei Han,
Nina Andrejevic,
Ricardo Pablo-Pedro,
Anuj Apte,
Yoichiro Tsurimaki,
Zhiwei Ding,
Kunyan Zhang,
Ahmet Alatas,
Ercan E. Alp,
Songxue Chi,
Jaime Fernandez-Baca,
Masaaki Matsuda,
David Alan Tennant,
Yang Zhao,
Zhijun Xu,
Jeffrey W. Lynn,
Shengxi Huang,
Mingda Li
Abstract:
The electron-phonon interaction (EPI) is instrumental in a wide variety of phenomena in solid-state physics, such as electrical resistivity in metals, carrier mobility, optical transition and polaron effects in semiconductors, lifetime of hot carriers, transition temperature in BCS superconductors, and even spin relaxation in diamond nitrogen-vacancy centers for quantum information processing. How…
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The electron-phonon interaction (EPI) is instrumental in a wide variety of phenomena in solid-state physics, such as electrical resistivity in metals, carrier mobility, optical transition and polaron effects in semiconductors, lifetime of hot carriers, transition temperature in BCS superconductors, and even spin relaxation in diamond nitrogen-vacancy centers for quantum information processing. However, due to the weak EPI strength, most phenomena have focused on electronic properties rather than on phonon properties. One prominent exception is the Kohn anomaly, where phonon softening can emerge when the phonon wavevector nests the Fermi surface of metals. Here we report a new class of Kohn anomaly in a topological Weyl semimetal (WSM), predicted by field-theoretical calculations, and experimentally observed through inelastic x-ray and neutron scattering on WSM tantalum phosphide (TaP). Compared to the conventional Kohn anomaly, the Fermi surface in a WSM exhibits multiple topological singularities of Weyl nodes, leading to a distinct nesting condition with chiral selection, a power-law divergence, and non-negligible dynamical effects. Our work brings the concept of Kohn anomaly into WSMs and sheds light on elucidating the EPI mechanism in emergent topological materials.
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Submitted 15 May, 2020; v1 submitted 2 June, 2019;
originally announced June 2019.
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Quantized Thermoelectric Hall Effect Induces Giant Power Factor in a Topological Semimetal
Authors:
Fei Han,
Nina Andrejevic,
Thanh Nguyen,
Vladyslav Kozii,
Quynh Nguyen,
Tom Hogan,
Zhiwei Ding,
Ricardo Pablo-Pedro,
Shreya Parjan,
Brian Skinner,
Ahmet Alatas,
Ercan Alp,
Songxue Chi,
Jaime Fernandez-Baca,
Shengxi Huang,
Liang Fu,
Mingda Li
Abstract:
Thermoelectrics are promising by directly generating electricity from waste heat. However, (sub-)room-temperature thermoelectrics have been a long-standing challenge due to vanishing electronic entropy at low temperatures. Topological materials offer a new avenue for energy harvesting applications. Recent theories predicted that topological semimetals at the quantum limit can lead to a large, non-…
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Thermoelectrics are promising by directly generating electricity from waste heat. However, (sub-)room-temperature thermoelectrics have been a long-standing challenge due to vanishing electronic entropy at low temperatures. Topological materials offer a new avenue for energy harvesting applications. Recent theories predicted that topological semimetals at the quantum limit can lead to a large, non-saturating thermopower and a quantized thermoelectric Hall conductivity approaching a universal value. Here, we experimentally demonstrate the non-saturating thermopower and quantized thermoelectric Hall effect in the topological Weyl semimetal (WSM) tantalum phosphide (TaP). An ultrahigh longitudinal thermopower Sxx= 1.1x10^3 muV/K and giant power factor ~525 muW/cm/K^2 are observed at ~40K, which is largely attributed to the quantized thermoelectric Hall effect. Our work highlights the unique quantized thermoelectric Hall effect realized in a WSM toward low-temperature energy harvesting applications.
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Submitted 27 October, 2020; v1 submitted 5 April, 2019;
originally announced April 2019.
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Quantized dislocations for functional and quantum materials
Authors:
Mingda Li,
Ricardo Pablo-Pedro
Abstract:
Dislocations have a profound influence on materials functional properties. In this perspective, we discuss the recent development of quantized dislocations - a theoretical tool that aims to compute the role of dislocations on materials' functionalities, at a full quantum field theoretical level. After a brief discussion of the motivation and a pedagogical introduction of quantization, we focus on…
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Dislocations have a profound influence on materials functional properties. In this perspective, we discuss the recent development of quantized dislocations - a theoretical tool that aims to compute the role of dislocations on materials' functionalities, at a full quantum field theoretical level. After a brief discussion of the motivation and a pedagogical introduction of quantization, we focus on a few case studies of dislon theory, to see how dislon can be applied to solve a given materials functionality problem and lead to new predictions. We conclude by visioning a few more open questions. With the aid of the powerful quantum field theory, the dislon approach may enable plenty opportunities to compute multiple functional and quantum properties in a dislocated crystal at a new level of clarity.
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Submitted 17 October, 2018;
originally announced October 2018.
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Phonon Quantum Phase Transition
Authors:
Ricardo Pablo-Pedro,
Nina Andrejevic,
Yoichiro Tsurimaki,
Zhiwei Ding,
Te-Huan Liu,
Gerald D Mahan,
Shengxi Huang,
Mingda Li
Abstract:
We show that a quantum phase transition can occur in a phonon system in the presence of dislocations. Due to the competing nature between the topological protection of the dislocation and anharmonicity, phonons can reach a quantum critical point at a frequency determined by dislocation density and the anharmonic constant, at zero temperature. In the symmetry-broken phase, a novel phonon state is d…
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We show that a quantum phase transition can occur in a phonon system in the presence of dislocations. Due to the competing nature between the topological protection of the dislocation and anharmonicity, phonons can reach a quantum critical point at a frequency determined by dislocation density and the anharmonic constant, at zero temperature. In the symmetry-broken phase, a novel phonon state is developed with a dynamically-induced dipole field. We carry out a renormalization group analysis and show that the phonon critical behavior differs wildly from any electronic system. In particular, at the critical point, a single phonon mode dominates the density of states and develops an exotic logarithmic divergence in thermal conductivity. This phonon quantum criticality provides a completely new avenue to tailor phonon transport at the single-mode level without using phononic crystals.
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Submitted 17 September, 2018;
originally announced September 2018.
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Exploring Low Internal Reorganization Energies for Silicene Nanoclusters
Authors:
Ricardo Pablo-Pedro,
Hector Lopez-Rios,
Jose-L Mendoza-Cortes,
**g Kong,
Serguei Fomine,
Troy Van Voorhis,
Mildred S. Dresselhaus
Abstract:
High-performance materials rely on small reorganization energies to facilitate both charge separation and charge transport. Here, we performed DFT calculations to predict small reorganization energies of rectangular silicene nanoclusters with hydrogen-passivated edges denoted by H-SiNC. We observe that across all geometries, H-SiNCs feature large electron affinities and highly stabilized anionic s…
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High-performance materials rely on small reorganization energies to facilitate both charge separation and charge transport. Here, we performed DFT calculations to predict small reorganization energies of rectangular silicene nanoclusters with hydrogen-passivated edges denoted by H-SiNC. We observe that across all geometries, H-SiNCs feature large electron affinities and highly stabilized anionic states, indicating their potential as n-type materials. Our findings suggest that fine-tuning the size of H-SiNCs along the zigzag and armchair directions may permit the design of novel n-type electronic materials and spinctronics devices that incorporate both high electron affinities and very low internal reorganization energies.
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Submitted 29 October, 2017; v1 submitted 17 August, 2017;
originally announced August 2017.
