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A Fully Automated Platform for Evaluating ReRAM Crossbars
Authors:
Rebecca Pelke,
Felix Staudigl,
Niklas Thomas,
Nils Bosbach,
Mohammed Hossein,
Jose Cubero-Cascante,
Leticia Bolzani Poehls,
Rainer Leupers,
Jan Moritz Joseph
Abstract:
Resistive Random Access Memory (ReRAM) is a promising candidate for implementing Computing-in-Memory (CIM) architectures and neuromorphic circuits. ReRAM cells exhibit significant variability across different memristive devices and cycles, necessitating further improvements in the areas of devices, algorithms, and applications. To achieve this, understanding the stochastic behavior of the differen…
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Resistive Random Access Memory (ReRAM) is a promising candidate for implementing Computing-in-Memory (CIM) architectures and neuromorphic circuits. ReRAM cells exhibit significant variability across different memristive devices and cycles, necessitating further improvements in the areas of devices, algorithms, and applications. To achieve this, understanding the stochastic behavior of the different ReRAM technologies is essential. The NeuroBreakoutBoard (NBB) is a versatile instrumentation platform to characterize Non-Volatile Memories (NVMs). However, the NBB itself does not provide any functionality in the form of software or a controller. In this paper, we present a control board for the NBB able to perform reliability assessments of 1T1R ReRAM crossbars. In more detail, an interface that allows a host PC to communicate with the NBB via the new control board is implemented. In a case study, we analyze the Cycle-to-Cycle (C2C) variation and read disturb TiN/Ti/HfO2/TiN cells for different read voltages to gain an understanding of their operational behavior.
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Submitted 20 March, 2024;
originally announced March 2024.
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Fault Injection in Native Logic-in-Memory Computation on Neuromorphic Hardware
Authors:
Felix Staudigl,
Thorben Fetz,
Rebecca Pelke,
Dominik Sisejkovic,
Jan Moritz Joseph,
Leticia Bolzani Pöhls,
Rainer Leupers
Abstract:
Logic-in-memory (LIM) describes the execution of logic gates within memristive crossbar structures, promising to improve performance and energy efficiency. Utilizing only binary values, LIM particularly excels in accelerating binary neural networks, shifting it in the focus of edge applications. Considering its potential, the impact of faults on BNNs accelerated with LIM still lacks investigation.…
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Logic-in-memory (LIM) describes the execution of logic gates within memristive crossbar structures, promising to improve performance and energy efficiency. Utilizing only binary values, LIM particularly excels in accelerating binary neural networks, shifting it in the focus of edge applications. Considering its potential, the impact of faults on BNNs accelerated with LIM still lacks investigation. In this paper, we propose faulty logic-in-memory (FLIM), a fault injection platform capable of executing full-fledged BNNs on LIM while injecting in-field faults. The results show that FLIM runs a single MNIST picture 66754x faster than the state of the art by offering a fine-grained fault injection methodology.
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Submitted 15 February, 2023;
originally announced February 2023.
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X-Fault: Impact of Faults on Binary Neural Networks in Memristor-Crossbar Arrays with Logic-in-Memory Computation
Authors:
Felix Staudigl,
Karl J. X. Sturm,
Maximilian Bartel,
Thorben Fetz,
Dominik Sisejkovic,
Jan Moritz Joseph,
Leticia Bolzani Pöhls,
Rainer Leupers
Abstract:
Memristor-based crossbar arrays represent a promising emerging memory technology to replace conventional memories by offering a high density and enabling computing-in-memory (CIM) paradigms. While analog computing provides the best performance, non-idealities and ADC/DAC conversion limit memristor-based CIM. Logic-in-Memory (LIM) presents another flavor of CIM, in which the memristors are used in…
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Memristor-based crossbar arrays represent a promising emerging memory technology to replace conventional memories by offering a high density and enabling computing-in-memory (CIM) paradigms. While analog computing provides the best performance, non-idealities and ADC/DAC conversion limit memristor-based CIM. Logic-in-Memory (LIM) presents another flavor of CIM, in which the memristors are used in a binary manner to implement logic gates. Since binary neural networks (BNNs) use binary logic gates as the dominant operation, they can benefit from the massively parallel execution of binary operations and better resilience to variations of the memristors. Although conventional neural networks have been thoroughly investigated, the impact of faults on memristor-based BNNs remains unclear. Therefore, we analyze the impact of faults on logic gates in memristor-based crossbar arrays for BNNs. We propose a simulation framework that simulates different traditional faults to examine the accuracy loss of BNNs on memristive crossbar arrays. In addition, we compare different logic families based on the robustness and feasibility to accelerate AI applications.
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Submitted 4 April, 2022;
originally announced April 2022.
