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Gallium-doped Zinc Oxide: Nonlinear Reflection and Transmission Measurements and Modeling in the ENZ Region
Authors:
Adam Ball,
Ray Secondo,
Benjamin T. Diroll,
Dhruv Fomra,
Kai Ding,
Vitaly Avrutin,
Umit Ozgur,
Nathaniel Kinsey
Abstract:
Strong nonlinear materials have been sought after for decades for applications in telecommunications, sensing, and quantum optics. Gallium-doped zinc oxide is a II-VI transparent conducting oxide that shows promising nonlinearities similar to indium tin oxide and aluminum-doped zinc oxide for the telecommunications band. Here we explore its nonlinearities in the epsilon near zero (ENZ) region and…
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Strong nonlinear materials have been sought after for decades for applications in telecommunications, sensing, and quantum optics. Gallium-doped zinc oxide is a II-VI transparent conducting oxide that shows promising nonlinearities similar to indium tin oxide and aluminum-doped zinc oxide for the telecommunications band. Here we explore its nonlinearities in the epsilon near zero (ENZ) region and show n2,eff values on the order of 4.5x10-3 cm2GW-1 for IR pum** on 200-300 nm thin films. Measuring nonlinear changes in transmission and reflection with a white light source probe in the near-IR while exciting in the near-IR provides data in both time and wavelength. Three films varying in thickness, optical loss, and ENZ crossover wavelength are numerically modeled and compared to experimental data showing agreement for both dispersion and temporal relaxation. In addition, we discuss optimal excitation and probing wavelengths occur around ENZ for thick films but are red-shifted for thin films where our model provides an additional degree of freedom to explore. Obtaining accurate nonlinear measurements is a difficult and time-consuming task where our method in this paper provides experimental and modeled data to the community for an ENZ material of interest.
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Submitted 9 November, 2022; v1 submitted 8 November, 2022;
originally announced November 2022.
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Plasmonic Titanium Nitride via Atomic Layer Deposition: A Low-Temperature Route
Authors:
Dhruv Fomra,
Ray Secondo,
Kai Ding,
Vitaliy Avrutin,
Natalia Izyumskaya,
Ümit Özgür,
Nathaniel Kinsey
Abstract:
To integrate plasmonic devices into industry, it is essential to develop scalable and CMOS compatible plasmonic materials. In this work, we report high plasmonic quality titanium nitride (TiN) on c-plane sapphire by plasma enhanced atomic layer deposition (PE-ALD). TiN with low losses and high metallicity was achieved at temperatures below 500°C, by exploring the effects of chemisorption time, sub…
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To integrate plasmonic devices into industry, it is essential to develop scalable and CMOS compatible plasmonic materials. In this work, we report high plasmonic quality titanium nitride (TiN) on c-plane sapphire by plasma enhanced atomic layer deposition (PE-ALD). TiN with low losses and high metallicity was achieved at temperatures below 500°C, by exploring the effects of chemisorption time, substrate temperature and plasma exposure time on material properties. Reduction in chemisorption time mitigates premature precursor decomposition at T_S > 375°C , and a trade-off between reduced impurity concentration and structural degradation caused by plasma bombardment is achieved for 25s plasma exposure. 85 nm thick TiN films grown at a substrate temperature of 450°C, compatible with CMOS processes, with 0.5s chemisorption time and 25s plasma exposure exhibited a high plasmonic figure of merit (|ε^'/ε^''|) of 2.8 and resistivity of 31 μΩ-cm. These TiN thin films fabricated with subwavelength apertures were shown to exhibit extraordinary transmission.
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Submitted 14 October, 2019;
originally announced January 2020.
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High-field electron transport in bulk ZnO
Authors:
L. Ardaravičius,
J. Liberis,
M. Ramonas,
E. Šermukšnis,
A. Matulionis,
M. Toporkov,
V. Avrutin,
Ü. Özgür,
H. Morkoç
Abstract:
Current-voltage dependence is measured in (Ga,Sb)-doped ZnO up to 150 kV/cm electric fields. A channel temperature is controlled by applying relatively short (few ns) voltage pulses to two-terminal samples. The dependence of electron drift velocity on electron density ranging from 1.42$\times$10$^{17}$ cm$^{-3}$ to 1.3$\times$10$^{20}$ cm$^{-3}$ at a given electric field is deduced after estimatio…
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Current-voltage dependence is measured in (Ga,Sb)-doped ZnO up to 150 kV/cm electric fields. A channel temperature is controlled by applying relatively short (few ns) voltage pulses to two-terminal samples. The dependence of electron drift velocity on electron density ranging from 1.42$\times$10$^{17}$ cm$^{-3}$ to 1.3$\times$10$^{20}$ cm$^{-3}$ at a given electric field is deduced after estimation of the sample contact resistance and the Hall electron mobility. Manifestation of the highest electron drift velocity up to $\sim$1.5$\times$10$^{7}$ cm/s is estimated for electron density of 1.42$\times$10$^{17}$ cm$^{-3}$ and is in agreement with Monte Carlo simulation when hot-phonon lifetime is below 1 ps. A local drift velocity maximum is observed at $\sim$1.1$\times$10$^{19}$ cm$^{-3}$ and is in agreement with ultra-fast hot phonon decay.
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Submitted 30 May, 2016;
originally announced May 2016.
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Illumination and annealing characteristics of two-dimensional electron gas systems in metal-organic vapor-phase epitaxy grown AlGaN/AlN/GaN heterostructures
Authors:
N. Biyikli,
U. Ozgur,
X. F. Ni,
Y. Fu,
H. Morkoc,
C. Kurdak
Abstract:
We studied the persistent photoconductivity (PPC) effect in AlGaN/AlN/GaN heterostructures with two different Al-compositions (x=0.15 and x=0.25). The two-dimensional electron gas formed at the AlN/GaN heterointerface was characterized by Shubnikov-de Haas and Hall measurements. Using optical illumination, we were able to increase the carrier density of the Al0.15Ga0.85N/AlN/GaN sample from 1.6x…
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We studied the persistent photoconductivity (PPC) effect in AlGaN/AlN/GaN heterostructures with two different Al-compositions (x=0.15 and x=0.25). The two-dimensional electron gas formed at the AlN/GaN heterointerface was characterized by Shubnikov-de Haas and Hall measurements. Using optical illumination, we were able to increase the carrier density of the Al0.15Ga0.85N/AlN/GaN sample from 1.6x10^{12} cm^{-2} to 5.9x1012 cm^{-2}, while the electron mobility was enhanced from 9540 cm2/Vs to 21400 cm2/Vs at T = 1.6 K. The persistent photocurrent in both samples exhibited a strong dependence on illumination wavelength, being highest close to the bandgap and decreasing at longer wavelengths. The PPC effect became fairly weak for illumination wavelengths longer than 530 nm and showed a more complex response with an initial negative photoconductivity in the infrared region of the spectrum (>700 nm). The maximum PPC-efficiency for 390 nm illumination was 0.011% and 0.005% for Al0.25Ga0.75N/AlN/GaN and Al0.15Ga0.85N/AlN/GaN samples, respectively. After illumination, the carrier density could be reduced by annealing the sample. Annealing characteristics of the PPC effect were studied in the 20-280 K temperature range. We found that annealing at 280 K was not sufficient for full recovery of the carrier density. In fact, the PPC effect occurs in these samples even at room temperature. Comparing the measurement results of two samples, the Al0.25Ga0.75N/AlN/GaN sample had a larger response to illumination and displayed a smaller recovery with thermal annealing. This result suggests that the energy scales of the defect configuration-coordinate diagrams for these samples are different, depending on their Al-composition.
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Submitted 11 August, 2006;
originally announced August 2006.
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Weak antilocalization and zero-field electron spin splitting in AlGaN/AlN/GaN heterostructures with a polarization induced two-dimensional electron gas
Authors:
C. Kurdak,
N. Biyikli,
U. Ozgur,
H. Morkoc,
V. I. Litvinov
Abstract:
Spin-orbit coupling is studied using the quantum interference corrections to conductance in AlGaN/AlN/GaN two-dimensional electron systems where the carrier density is controlled by the persistent photoconductivity effect. All the samples studied exhibit a weak antilocalization feature with a spin-orbit field of around 1.8 mT. The zero-field electron spin splitting energies extracted from the we…
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Spin-orbit coupling is studied using the quantum interference corrections to conductance in AlGaN/AlN/GaN two-dimensional electron systems where the carrier density is controlled by the persistent photoconductivity effect. All the samples studied exhibit a weak antilocalization feature with a spin-orbit field of around 1.8 mT. The zero-field electron spin splitting energies extracted from the weak antilocalization measurements are found to scale linearly with the Fermi wavevector with an effective linear spin-orbit coupling parameter 5.5x10^{-13} eV m. The spin-orbit times extracted from our measurements varied from 0.74 to 8.24 ps within the carrier density range of this experiment.
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Submitted 10 August, 2006;
originally announced August 2006.
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Stimulated emission and ultrafast carrier relaxation in InGaN multiple quantum wells
Authors:
Umit Ozgur,
Henry O. Everitt,
Stacia Keller,
Steven P. DenBaars
Abstract:
Stimulated emission (SE) was measured from two InGaN multiple quantum well (MQW) laser structures with different In compositions. SE threshold power densities (I_th) increased with increasing QW depth (x). Time-resolved differential transmission measurements mapped the carrier relaxation mechanisms and explained the dependence of I_th on x. Carriers are captured from the barriers to the QWs in <…
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Stimulated emission (SE) was measured from two InGaN multiple quantum well (MQW) laser structures with different In compositions. SE threshold power densities (I_th) increased with increasing QW depth (x). Time-resolved differential transmission measurements mapped the carrier relaxation mechanisms and explained the dependence of I_th on x. Carriers are captured from the barriers to the QWs in < 1 ps, while carrier recombination rates increased with increasing x. For excitation above I_th an additional, fast relaxation mechanism appears due to the loss of carriers in the barriers through a cascaded refilling of the QW state undergoing SE. The increased material inhomogeneity with increasing x provides additional relaxation channels outside the cascaded refilling process, removing carriers from the SE process and increasing I_th.
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Submitted 16 October, 2002;
originally announced October 2002.
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Ultrafast carrier relaxation in GaN, In_(0.05)Ga_(0.95)N and an In_(0.05)Ga_(0.95)/In_(0.15)Ga_(0.85)N Multiple Quantum Well
Authors:
Umit Ozgur,
Henry O. Everitt
Abstract:
Room temperature, wavelength non-degenerate ultrafast pump/probe measurements were performed on GaN and InGaN epilayers and an InGaN multiple quantum well structure. Carrier relaxation dynamics were investigated as a function of excitation wavelength and intensity. Spectrally-resolved sub-picosecond relaxation due to carrier redistribution and QW capture was found to depend sensitively on the wa…
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Room temperature, wavelength non-degenerate ultrafast pump/probe measurements were performed on GaN and InGaN epilayers and an InGaN multiple quantum well structure. Carrier relaxation dynamics were investigated as a function of excitation wavelength and intensity. Spectrally-resolved sub-picosecond relaxation due to carrier redistribution and QW capture was found to depend sensitively on the wavelength of pump excitation. Moreover, for pump intensities above a threshold of 100 microJ/cm2, all samples demonstrated an additional emission feature arising from stimulated emission (SE). SE is evidenced as accelerated relaxation (< 10 ps) in the pump-probe data, fundamentally altering the re-distribution of carriers. Once SE and carrier redistribution is completed, a slower relaxation of up to 1 ns for GaN and InGaN epilayers, and 660 ps for the MQW sample, indicates carrier recombination through spontaneous emission.
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Submitted 9 October, 2002;
originally announced October 2002.
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Control of Coherent Acoustic Phonons
Authors:
Umit Ozgur,
Chang-Won Lee,
Henry O. Everitt
Abstract:
Using sub-picosecond optical pump-probe techniques, coherent zone-folded longitudinal acoustic phonons (ZFLAPs) were generated and controlled in an InGaN multiple quantum well structure. A one-pump, one-probe differential transmission technique revealed that carriers injected near the barrier band edge were quickly captured into the quantum wells and generated strong coherent ZFLAP oscillations.…
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Using sub-picosecond optical pump-probe techniques, coherent zone-folded longitudinal acoustic phonons (ZFLAPs) were generated and controlled in an InGaN multiple quantum well structure. A one-pump, one-probe differential transmission technique revealed that carriers injected near the barrier band edge were quickly captured into the quantum wells and generated strong coherent ZFLAP oscillations. Two-pump differential transmission was used to generate and control coherent ZFLAP oscillations through the relative timing and amplitude of the two pump pulses. Enhancement and suppression of ZFLAP oscillations were demonstrated, including complete cancellation of generated acoustic phonons for the first time in any material system. Coherent control was used to demonstrate that ZFLAPs are generated differently in InGaN multiple quantum wells than in GaAs/AlAs superlattices.
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Submitted 25 April, 2001; v1 submitted 11 October, 2000;
originally announced October 2000.
