High conduction hop** behavior induced in transition metal dichalcogenides by percolating defect networks: toward atomically thin circuits
Authors:
Michael G. Stanford,
Pushpa R. Pudasaini,
Elisabeth T. Gallmeier,
Nicholas Cross,
Liangbo Liang,
Akinola Oyedele,
Gerd Duscher,
Masoud Mahjouri-Samani,
Kai Wang,
Kai Xiao,
David B. Geohegan,
Alex Belianinov,
Bobby G. Sumpter,
Philip D. Rack
Abstract:
Atomically thin circuits have recently been explored for applications in next-generation electronics and optoelectronics and have been demonstrated with two-dimensional lateral heterojunctions. In order to form true 2D circuitry from a single material, electronic properties must be spatially tunable. Here, we report tunable transport behavior which was introduced into single layer tungsten diselen…
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Atomically thin circuits have recently been explored for applications in next-generation electronics and optoelectronics and have been demonstrated with two-dimensional lateral heterojunctions. In order to form true 2D circuitry from a single material, electronic properties must be spatially tunable. Here, we report tunable transport behavior which was introduced into single layer tungsten diselenide and tungsten disulfide by focused He$^+$ irradiation. Pseudo-metallic behavior was induced by irradiating the materials with a dose of ~1x10$^{16} He^+/cm^2$ to introduce defect states, and subsequent temperature-dependent transport measurements suggest a nearest neighbor hop** mechanism is operative. Scanning transmission electron microscopy and electron energy loss spectroscopy reveal that Se is sputtered preferentially, and extended percolating networks of edge states form within WSe$_2$ at a critical dose of 1x10$^{16} He^+/cm^2$. First-principles calculations confirm the semiconductor-to-metallic transition of WSe$_2$ after pore and edge defects were introduced by He$^+$ irradiation. The hop** conduction was utilized to direct-write resistor loaded logic circuits in WSe$_2$ and WS$_2$ with a voltage gain of greater than 5. Edge contacted thin film transistors were also fabricated with a high on/off ratio (> 10$^6$), demonstrating potential for the formation of atomically thin circuits.
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Submitted 23 September, 2017; v1 submitted 15 May, 2017;
originally announced May 2017.
