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Magneto-optical detection of spin-orbit torque vector with first-order Kerr effects
Authors:
Claudio Gonzalez-Fuentes,
Maria Abellan,
Simon Oyarzun,
Christian Orellana
Abstract:
We have developed a novel, compact and cost-effective magneto-optical method for quantifying the spin-orbit torque (SOT) effective field vector (hSO) in magnetic thin films subjected to spin current injection. The dam**-like (hSODL) component of the vector is obtained by the polar Kerr response arising from the out-of-plane magnetization tilting, whereas the field-like component (hSODL) is obtai…
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We have developed a novel, compact and cost-effective magneto-optical method for quantifying the spin-orbit torque (SOT) effective field vector (hSO) in magnetic thin films subjected to spin current injection. The dam**-like (hSODL) component of the vector is obtained by the polar Kerr response arising from the out-of-plane magnetization tilting, whereas the field-like component (hSODL) is obtained by current-induced hysteresis-loop shifting study, using conventional longitudinal Kerr magnetometry.
We tested our method in FM/NM bilayers comprising NiFe, CoFeB (ferromagnetic layers) and Pt, Pd, Ta (non-magnetic layers). Our findings revealed a dam**-like SOT efficiency xiDL of 0.089 pm 0.006,0.019 pm 0.002, and -0.132 pm 0.009 for Pt, Pd, and Ta, respectively. The hSOFL/hSODL ratio was 0.35 pm 0.02 for NiFe/Pt and 0.14 pm 0.002 for Ta/CoFeB bilayers when the ferromagnetic layer thickness is 4nm.
A key advancement over the state-of-art magneto-optical methods is the use of an oblique light incidence angle, which allows switching between measuring modes for hSODL and hSOFL, without altering the experimental setup. Moreover, our approach relies exclusively on first-order Kerr effects, thereby ensuring its broad applicability to any type of ferromagnetic material.
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Submitted 22 April, 2024;
originally announced April 2024.
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Stabilization of Magnetic Skyrmions on Arrays of Self-Assembled Hexagonal Nanodomes for Magnetic Recording Applications
Authors:
Felipe Tejo,
Denilson Toneto,
Simón Oyarzún,
José Hermosilla,
Caroline S. Danna,
Juan L. Palma,
Ricardo B. da Silva,
Lucio S. Dorneles,
Juliano C. Denardin
Abstract:
Magnetic skyrmions are nontrivial spin textures which resist external perturbations, being promising candidates for the next generation recording devices. Nevertheless, a major challenge in realizing skyrmion-based devices is the stabilization of ordered arrays of these spin textures under ambient conditions and zero applied field. Here, we demonstrate for the first time the formation and stabiliz…
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Magnetic skyrmions are nontrivial spin textures which resist external perturbations, being promising candidates for the next generation recording devices. Nevertheless, a major challenge in realizing skyrmion-based devices is the stabilization of ordered arrays of these spin textures under ambient conditions and zero applied field. Here, we demonstrate for the first time the formation and stabilization of magnetic skyrmions on arrays of self-assembled hexagonal nanodomes taking advantage of the intrinsic properties of its curved geometry. Magnetic force microscopy images from the arrays of 100 nm nanodomes showed stable skyrmions at zero field that are arranged following the topography of the nanostructure. Micromagnetic simulations are compared to the experiments to determine the correlation of the domain textures with the topography of the samples. We propose a simple method to nucleate and annihilate skyrmions, opening the possibility for ultra-dense data storage based on the high stability and low energy consumption of the skyrmionic textures.
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Submitted 7 October, 2020;
originally announced October 2020.
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Highly efficient and tuneable spin-to-charge conversion through Rashba coupling at oxide interfaces
Authors:
E. Lesne,
Y. Fu,
S. Oyarzun,
J. C. Rojas-Sanchez,
D. C. Vaz,
H. Naganuma,
G. Sicoli,
J. -P. Attane,
M. Jamet,
E. Jacquet,
J. -M. George,
A. Barthelemy,
H. Jaffres,
A. Fert,
M. Bibes,
L. Vila
Abstract:
The spin-orbit interaction couples the electrons' motion to their spin. Accordingly, passing a current in a material with strong spin-orbit coupling generates a transverse spin current (spin Hall effect, SHE) and vice-versa (inverse spin Hall effect, ISHE). The emergence of SHE and ISHE as charge-to-spin interconversion mechanisms offers a variety of novel spintronics functionalities and devices,…
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The spin-orbit interaction couples the electrons' motion to their spin. Accordingly, passing a current in a material with strong spin-orbit coupling generates a transverse spin current (spin Hall effect, SHE) and vice-versa (inverse spin Hall effect, ISHE). The emergence of SHE and ISHE as charge-to-spin interconversion mechanisms offers a variety of novel spintronics functionalities and devices, some of which do not require any ferromagnetic material. However, the interconversion efficiency of SHE and ISHE (spin Hall angle) is a bulk property that rarely exceeds ten percent, and does not take advantage of interfacial and low-dimensional effects otherwise ubiquitous in spintronics hetero- and mesostructures. Here, we make use of an interface-driven spin-orbit coupling mechanism - the Rashba effect - in the oxide two-dimensional electron system (2DES) LaAlO3/SrTiO3 to achieve spin-to-charge conversion with unprecedented efficiency. Through spin-pum**, we inject a spin current from a NiFe film into the oxide 2DES and detect the resulting charge current, which can be strongly modulated by a gate voltage. We discuss the amplitude of the effect and its gate dependence on the basis of the electronic structure of the 2DES.
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Submitted 21 September, 2016;
originally announced September 2016.
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Enhanced spin pum** efficiency in antiferromagnetic IrMn thin films around the magnetic phase transition
Authors:
Lamprini Frangou,
Simon Oyarzun,
Stephane Auffret,
Laurent Vila,
Serge Gambarelli,
Vincent Baltz
Abstract:
We report measurement of a spin pum** effect due to fluctuations of the magnetic order of IrMn thin films. A precessing NiFe ferromagnet injected spins into IrMn spin sinks, and enhanced dam** was observed around the IrMn magnetic phase transition. Our data was compared to a recently developed theory and converted into interfacial spin mixing conductance enhancements. By spotting the spin pump…
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We report measurement of a spin pum** effect due to fluctuations of the magnetic order of IrMn thin films. A precessing NiFe ferromagnet injected spins into IrMn spin sinks, and enhanced dam** was observed around the IrMn magnetic phase transition. Our data was compared to a recently developed theory and converted into interfacial spin mixing conductance enhancements. By spotting the spin pum** peak, the thickness dependence of the IrMn critical temperature could be determined and the characteristic length for the spin-spin interactions was deduced.
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Submitted 7 January, 2016; v1 submitted 11 September, 2015;
originally announced September 2015.
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Spin-pum** into surface states of topological insulator α-Sn, spin to charge conversion at room temperature
Authors:
J. -C. Rojas-Sánchez,
S. Oyarzun,
Y. Fu,
A. Marty,
C. Vergnaud,
S. Gambarelli,
L. Vila,
M. Jamet,
Y. Ohtsubo,
A. Taleb-Ibrahimi,
P. Le Fèvre,
F. Bertran,
N. Reyren,
J. -M. George,
A. Fert
Abstract:
We present experimental results on the conversion of a spin current into a charge current by spin pum** into the Dirac cone with helical spin polarization of the elemental topological insulator (TI) α-Sn[1-3]. By angle-resolved photoelectron spectroscopy (ARPES) we first confirm that the Dirac cone at the surface of α-Sn (0 0 1) layers subsists after covering with Ag. Then we show that resonant…
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We present experimental results on the conversion of a spin current into a charge current by spin pum** into the Dirac cone with helical spin polarization of the elemental topological insulator (TI) α-Sn[1-3]. By angle-resolved photoelectron spectroscopy (ARPES) we first confirm that the Dirac cone at the surface of α-Sn (0 0 1) layers subsists after covering with Ag. Then we show that resonant spin pum** at room temperature from Fe through Ag into α-Sn layers induces a lateral charge current that can be ascribed to the Inverse Edelstein Effect[4-5]. Our observation of an Inverse Edelstein Effect length[5-6] much longer than for Rashba interfaces[5-10] demonstrates the potential of the TI for conversion between spin and charge in spintronic devices. By comparing our results with data on the relaxation time of TI free surface states from time-resolved ARPES, we can anticipate the ultimate potential of TI for spin to charge conversion and the conditions to reach it.
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Submitted 9 September, 2015;
originally announced September 2015.
