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Automated experiment in 4D-STEM: exploring emergent physics and structural behaviors
Authors:
Kevin M. Roccapriore,
Ondrej Dyck,
Mark P. Oxley,
Maxim Ziatdinov,
Sergei V. Kalinin
Abstract:
Automated experiments in 4D Scanning Transmission Electron Microscopy are implemented for rapid discovery of local structures, symmetry-breaking distortions, and internal electric and magnetic fields in complex materials. Deep kernel learning enables active learning of the relationship between local structure and a 4D-STEM based descriptors. With this, efficient and "intelligent" probing of dissim…
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Automated experiments in 4D Scanning Transmission Electron Microscopy are implemented for rapid discovery of local structures, symmetry-breaking distortions, and internal electric and magnetic fields in complex materials. Deep kernel learning enables active learning of the relationship between local structure and a 4D-STEM based descriptors. With this, efficient and "intelligent" probing of dissimilar structural elements to discover desired physical functionality is made possible. This approach allows effective navigation of the sample in an automated fashion guided by either a pre-determined physical phenomenon, such as strongest electric field magnitude, or in an exploratory fashion. We verify the approach first on pre-acquired 4D-STEM data, and further implement it experimentally on an operational STEM. The experimental discovery workflow is demonstrated using graphene, and subsequently extended towards a lesser-known layered 2D van der Waal material, MnPS3. This approach establishes a paradigm for physics-driven automated 4D-STEM experiments that enable probing the physics of strongly correlated systems and quantum materials and devices, as well as exploration of beam sensitive materials.
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Submitted 20 April, 2022; v1 submitted 8 December, 2021;
originally announced December 2021.
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Electron-beam induced emergence of mesoscopic ordering in layered MnPS$_{3}$
Authors:
Kevin M. Roccapriore,
Nan Huang,
Mark P. Oxley,
Vinit Sharma,
Timothy Taylor,
Swagata Acharya,
Dimitar Pashov,
Mikhail I. Katsnelson,
David Mandrus,
Janice L. Musfeldt,
Sergei V. Kalinin
Abstract:
Ordered mesoscale structures in 2D materials induced by small misorientations have opened pathways for a wide variety of novel electronic, ferroelectric, and quantum phenomena. Until now, the only mechanism to induce this periodic ordering was via mechanical rotations between the layers, with the periodicity of the resulting moirĂ© pattern being directly related to twist angle. Here we report a fun…
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Ordered mesoscale structures in 2D materials induced by small misorientations have opened pathways for a wide variety of novel electronic, ferroelectric, and quantum phenomena. Until now, the only mechanism to induce this periodic ordering was via mechanical rotations between the layers, with the periodicity of the resulting moiré pattern being directly related to twist angle. Here we report a fundamentally new mechanism for emergence of mesoscopic periodic patterns in multilayer sulfur-containing metal phosphorous trichalcogenide, MnPS$_{3}$, induced by the electron beam. The formation under the beam of periodic hexagonal patterns with several characteristic length scales, nucleation and transitions between the phases, and local dynamics are demonstrated. The associated mechanisms are attributed to the relative contraction of the layers caused by beam-induced sulphur vacancy formation with subsequent ordering and lattice parameter change. As a result, the plasmonic response of the system is locally altered, suggesting an element of control over plasmon resonances by electron beam patterning. We pose that harnessing this phenomenon provides both insight into fundamental physics of quantum materials and opens a pathway towards device applications by enabling controlled periodic potentials on the atomic scale.
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Submitted 29 September, 2022; v1 submitted 4 October, 2021;
originally announced October 2021.
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Deep Bayesian Local Crystallography
Authors:
Sergei V. Kalinin,
Mark P. Oxley,
Mani Valleti,
Junjie Zhang,
Raphael P. Hermann,
Hong Zheng,
Wenrui Zhang,
Gyula Eres,
Rama K. Vasudevan,
Maxim Ziatdinov
Abstract:
The advent of high-resolution electron and scanning probe microscopy imaging has opened the floodgates for acquiring atomically resolved images of bulk materials, 2D materials, and surfaces. This plethora of data contains an immense volume of information on materials structures, structural distortions, and physical functionalities. Harnessing this knowledge regarding local physical phenomena neces…
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The advent of high-resolution electron and scanning probe microscopy imaging has opened the floodgates for acquiring atomically resolved images of bulk materials, 2D materials, and surfaces. This plethora of data contains an immense volume of information on materials structures, structural distortions, and physical functionalities. Harnessing this knowledge regarding local physical phenomena necessitates the development of the mathematical frameworks for extraction of relevant information. However, the analysis of atomically resolved images is often based on the adaptation of concepts from macroscopic physics, notably translational and point group symmetries and symmetry lowering phenomena. Here, we explore the bottom-up definition of structural units and symmetry in atomically resolved data using a Bayesian framework. We demonstrate the need for a Bayesian definition of symmetry using a simple toy model and demonstrate how this definition can be extended to the experimental data using deep learning networks in a Bayesian setting, namely rotationally invariant variational autoencoders.
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Submitted 13 December, 2020;
originally announced December 2020.
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Probing atomic-scale symmetry breaking by rotationally invariant machine learning of multidimensional electron scattering
Authors:
Mark P. Oxley,
Maxim Ziatdinov,
Ondrej Dyck,
Andrew R. Lupini,
Rama Vasudevan,
Sergei V. Kalinin
Abstract:
The 4D scanning transmission electron microscopy (STEM) method has enabled map** of the structure and functionality of solids on the atomic scale, yielding information-rich data sets containing information on the interatomic electric and magnetic fields, structural and electronic order parameters, and other symmetry breaking distortions. A critical bottleneck on the pathway toward harnessing 4D-…
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The 4D scanning transmission electron microscopy (STEM) method has enabled map** of the structure and functionality of solids on the atomic scale, yielding information-rich data sets containing information on the interatomic electric and magnetic fields, structural and electronic order parameters, and other symmetry breaking distortions. A critical bottleneck on the pathway toward harnessing 4D-STEM for materials exploration is the dearth of analytical tools that can reduce complex 4D-STEM data sets to physically relevant descriptors. Classical machine learning (ML) methods such as principal component analysis and other linear unmixing techniques are limited by the presence of multiple point-group symmetric variants, where diffractograms from each rotationally equivalent position will form its own component. This limitation even holds for more complex ML methods, such as convolutional neural networks. Here, we propose and implement an approach for the systematic exploration of symmetry breaking phenomena from 4D-STEM data sets using rotationally invariant variational autoencoders (rrVAE), which is designed to disentangle the general rotation of the object from other latent representations. The implementation of purely rotational rrVAE is discussed as are applications to simulated data for graphene and zincblende structures that illustrate the effect of site symmetry breaking. Finally, the rrVAE analysis of 4D-STEM data of vacancies in graphene is illustrated and compared to the classical center-of-mass (COM) analysis. This approach is universal for probing of symmetry breaking phenomena in complex systems and can be implemented for a broad range of diffraction methods exploring the 2D diffraction space of the system, including X-ray ptychography, electron backscatter diffraction (EBSD), and more complex methods.
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Submitted 22 September, 2020;
originally announced September 2020.
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Deep learning of interface structures from the 4D STEM data: cation intermixing vs. roughening
Authors:
Mark P. Oxley,
Junqi Yin,
Nikolay Borodinov,
Suhas Somnath,
Maxim Ziatdinov,
Andrew R. Lupini,
Stephen Jesse,
Rama K. Vasudevan,
Sergei V. Kalinin
Abstract:
Interface structures in complex oxides remain one of the active areas of condensed matter physics research, largely enabled by recent advances in scanning transmission electron microscopy (STEM). Yet the nature of the STEM contrast in which the structure is projected along the given direction precludes separation of possible structural models. Here, we utilize deep convolutional neural networks (D…
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Interface structures in complex oxides remain one of the active areas of condensed matter physics research, largely enabled by recent advances in scanning transmission electron microscopy (STEM). Yet the nature of the STEM contrast in which the structure is projected along the given direction precludes separation of possible structural models. Here, we utilize deep convolutional neural networks (DCNN) trained on simulated 4D scanning transmission electron microscopy (STEM) datasets to predict structural descriptors of interfaces. We focus on the widely studied interface between LaAlO3 and SrTiO3, using dynamical diffraction theory and leveraging high performance computing to simulate thousands of possible 4D STEM datasets to train the DCNN to learn properties of the underlying structures on which the simulations are based. We validate the DCNN on simulated data and show that it is possible (with >95% accuracy) to identify a physically rough from a chemically diffuse interface and achieve 85% accuracy in determination of buried step positions within the interface. The method shown here is general and can be applied for any inverse imaging problem where forward models are present.
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Submitted 20 February, 2020;
originally announced February 2020.
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Structure retrieval from 4D-STEM: statistical analysis of potential pitfalls in high-dimensional data
Authors:
Xin Li,
Ondrej Dyck,
Stephen Jesse,
Andrew R. Lupini,
Sergei V. Kalinin,
Mark P. Oxley
Abstract:
Four-dimensional scanning transmission electron microscopy (4D-STEM) is one of the most rapidly growing modes of electron microscopy imaging. The advent of fast pixelated cameras and the associated data infrastructure have greatly accelerated this process. Yet conversion of the 4D datasets into physically meaningful structure images in real-space remains an open issue. In this work, we demonstrate…
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Four-dimensional scanning transmission electron microscopy (4D-STEM) is one of the most rapidly growing modes of electron microscopy imaging. The advent of fast pixelated cameras and the associated data infrastructure have greatly accelerated this process. Yet conversion of the 4D datasets into physically meaningful structure images in real-space remains an open issue. In this work, we demonstrate that, it is possible to systematically create filters that will affect the apparent resolution or even qualitative features of the real-space structure image, reconstructing artificially generated patterns. As initial efforts, we explore statistical model selection algorithms, aiming for robustness and reliability of estimated filters. This statistical model selection analysis demonstrates the need for regularization and cross-validation of inversion methods to robustly recover structure from high-dimensional diffraction datasets.
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Submitted 26 August, 2019; v1 submitted 1 August, 2019;
originally announced August 2019.
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Manifold Learning of Four-dimensional Scanning Transmission Electron Microscopy
Authors:
Xin Li,
Ondrej E. Dyck,
Mark P. Oxley,
Andrew R. Lupini,
Leland McInnes,
John Healy,
Stephen Jesse,
Sergei V. Kalinin
Abstract:
Four-dimensional scanning transmission electron microscopy (4D-STEM) of local atomic diffraction patterns is emerging as a powerful technique for probing intricate details of atomic structure and atomic electric fields. However, efficient processing and interpretation of large volumes of data remain challenging, especially for two-dimensional or light materials because the diffraction signal recor…
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Four-dimensional scanning transmission electron microscopy (4D-STEM) of local atomic diffraction patterns is emerging as a powerful technique for probing intricate details of atomic structure and atomic electric fields. However, efficient processing and interpretation of large volumes of data remain challenging, especially for two-dimensional or light materials because the diffraction signal recorded on the pixelated arrays is weak. Here we employ data-driven manifold leaning approaches for straightforward visualization and exploration analysis of the 4D-STEM datasets, distilling real-space neighboring effects on atomically resolved deflection patterns from single-layer graphene, with single dopant atoms, as recorded on a pixelated detector. These extracted patterns relate to both individual atom sites and sublattice structures, effectively discriminating single dopant anomalies via multi-mode views. We believe manifold learning analysis will accelerate physics discoveries coupled between data-rich imaging mechanisms and materials such as ferroelectric, topological spin and van der Waals heterostructures.
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Submitted 13 January, 2019; v1 submitted 18 October, 2018;
originally announced November 2018.
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Electron transfer and ionic displacements at the origin of the 2D electron gas at the LAO/STO interface: Direct measurements with atomic-column spatial resolution
Authors:
C. Cantoni,
J. Gazquez,
F. Miletto Granozio,
M. P. Oxley,
M. Varela,
A. R. Lupini,
S. J. Pennycook,
C. Aruta,
U. Scotti di Uccio,
P. Perna,
D. Maccariello
Abstract:
The discovery that the interface between two band gap insulators LaAlO3 and SrTiO3 is highly conducting has raised an enormous interest in the field of oxide electronics. The LAlO3/SrTiO3 interface can be tuned using an electric field and switched from a superconducting to an insulating state. Conducting paths in an insulating background can be written applying a voltage with the tip of an atomic…
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The discovery that the interface between two band gap insulators LaAlO3 and SrTiO3 is highly conducting has raised an enormous interest in the field of oxide electronics. The LAlO3/SrTiO3 interface can be tuned using an electric field and switched from a superconducting to an insulating state. Conducting paths in an insulating background can be written applying a voltage with the tip of an atomic force microscope, creating great promise for the development of a new generation of nanoscale electronic devices. However, the mechanism for interface conductivity in LaAlO3/SrTiO3 has remained elusive. The theoretical explanation based on an intrinsic charge transfer (electronic reconstruction) has been strongly challenged by alternative descriptions based on point defects. In this work, thanks to modern aberration-corrected electron probes with atomic-scale spatial resolution, interfacial charge and atomic displacements originating the electric field within the system can be simultaneously measured, yielding unprecedented experimental evidence in favor of an intrinsic electronic reconstruction.
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Submitted 20 June, 2012;
originally announced June 2012.
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Atomic-scale compensation phenomena at polar interfaces
Authors:
Matthew F. Chisholm,
Weidong Luo,
Mark P. Oxley,
Sokrates T. Pantelides,
Ho Nyung Lee
Abstract:
The interfacial screening charge that arises to compensate electric fields of dielectric or ferroelectric thin films is now recognized as the most important factor in determining the capacitance or polarization of ultrathin ferroelectrics. Here we investigate using aberration-corrected electron microscopy and density functional theory how interfaces cope with the need to terminate ferroelectric po…
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The interfacial screening charge that arises to compensate electric fields of dielectric or ferroelectric thin films is now recognized as the most important factor in determining the capacitance or polarization of ultrathin ferroelectrics. Here we investigate using aberration-corrected electron microscopy and density functional theory how interfaces cope with the need to terminate ferroelectric polarization. In one case, we show evidence for ionic screening, which has been predicted by theory but never observed. For a ferroelectric film on an insulating substrate, we found that compensation can be mediated by interfacial charge generated, for example, by oxygen vacancies.
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Submitted 26 October, 2010;
originally announced October 2010.
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Suppression of Octahedral Tilts and Associated Changes of Electronic Properties at Epitaxial Oxide Heterostructure Interfaces
Authors:
A. Borisevich,
H. J. Chang,
M. Huijben,
M. P. Oxley,
S. Okamoto,
M. K. Niranjan,
J. D. Burton,
E. Y. Tsymbal,
Y. H. Chu,
P. Yu,
R. Ramesh,
S. V. Kalinin,
S. J. Pennycook
Abstract:
Epitaxial oxide interfaces with broken translational symmetry have emerged as a central paradigm behind the novel behaviors of oxide superlattices. Here, we use scanning transmission electron microscopy to demonstrate a direct, quantitative unit-cell-by-unit-cell map** of lattice parameters and oxygen octahedral rotations across the BiFeO3-La0.7Sr0.3MnO3 interface to elucidate how the change o…
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Epitaxial oxide interfaces with broken translational symmetry have emerged as a central paradigm behind the novel behaviors of oxide superlattices. Here, we use scanning transmission electron microscopy to demonstrate a direct, quantitative unit-cell-by-unit-cell map** of lattice parameters and oxygen octahedral rotations across the BiFeO3-La0.7Sr0.3MnO3 interface to elucidate how the change of crystal symmetry is accommodated. Combined with low-loss electron energy loss spectroscopy imaging, we demonstrate a mesoscopic antiferrodistortive phase transition and elucidate associated changes in electronic properties in a thin layer directly adjacent to the interface.
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Submitted 15 February, 2010;
originally announced February 2010.
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Spectroscopic imaging of single atoms within a bulk solid
Authors:
M. Varela,
S. D. Findlay,
A. R. Lupini,
H. M. Christen,
A. Y. Borisevich,
N. Dellby,
O. L. Krivanek,
P. D. Nellist,
M. P. Oxley,
L. J. Allen,
S. J. Pennycook,
.
Abstract:
The ability to localize, identify and measure the electronic environment of individual atoms will provide fundamental insights into many issues in materials science, physics and nanotechnology. We demonstrate, using an aberration-corrected scanning transmission microscope, the spectroscopic imaging of single La atoms inside CaTiO3. Dynamical simulations confirm that the spectroscopic information…
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The ability to localize, identify and measure the electronic environment of individual atoms will provide fundamental insights into many issues in materials science, physics and nanotechnology. We demonstrate, using an aberration-corrected scanning transmission microscope, the spectroscopic imaging of single La atoms inside CaTiO3. Dynamical simulations confirm that the spectroscopic information is spatially confined around the scattering atom. Furthermore we show how the depth of the atom within the crystal may be estimated.
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Submitted 28 January, 2004; v1 submitted 9 January, 2004;
originally announced January 2004.