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Tracking before detection using partial orders and optimization
Authors:
Michael Robinson,
Michael Stein,
Henry S. Owen
Abstract:
This article addresses the problem of multi-object tracking by using a non-deterministic model of target behaviors with hard constraints. To capture the evolution of target features as well as their locations, we permit objects to lie in a general topological target configuration space, rather than a Euclidean space. We obtain tracker performance bounds based on sample rates, and derive a flexible…
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This article addresses the problem of multi-object tracking by using a non-deterministic model of target behaviors with hard constraints. To capture the evolution of target features as well as their locations, we permit objects to lie in a general topological target configuration space, rather than a Euclidean space. We obtain tracker performance bounds based on sample rates, and derive a flexible, agnostic tracking algorithm. We demonstrate our algorithm on two scenarios involving laboratory and field data.
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Submitted 22 January, 2024;
originally announced January 2024.
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Low voltage control of ferromagnetism in a semiconductor p-n junction
Authors:
M. H. S. Owen,
J. Wunderlich,
V. Novak,
K. Olejnik,
3 J. Zemen,
K. Vyborny,
S. Ogawa,
A. C. Irvine,
A. J. Ferguson,
H. Sirringhaus,
T. Jungwirth
Abstract:
The concept of low-voltage depletion and accumulation of electron charge in semiconductors, utilized in field-effect transistors (FETs), is one of the cornerstones of current information processing technologies. Spintronics which is based on manipulating the collective state of electron spins in a ferromagnet provides complementary technologies for reading magnetic bits or for the solid-state me…
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The concept of low-voltage depletion and accumulation of electron charge in semiconductors, utilized in field-effect transistors (FETs), is one of the cornerstones of current information processing technologies. Spintronics which is based on manipulating the collective state of electron spins in a ferromagnet provides complementary technologies for reading magnetic bits or for the solid-state memories. The integration of these two distinct areas of microelectronics in one physical element, with a potentially major impact on the power consumption and scalability of future devices, requires to find efficient means for controlling magnetization electrically. Current induced magnetization switching phenomena represent a promising step towards this goal, however, they relay on relatively large current densities. The direct approach of controlling the magnetization by low-voltage charge depletion effects is seemingly unfeasible as the two worlds of semiconductors and metal ferromagnets are separated by many orders of magnitude in their typical carrier concentrations. Here we demonstrate that this concept is viable by reporting persistent magnetization switchings induced by short electrical pulses of a few volts in an all-semiconductor, ferromagnetic p-n junction.
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Submitted 6 July, 2008;
originally announced July 2008.
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Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study
Authors:
K. Olejnik,
M. H. S. Owen,
V. Novak,
J. Masek,
A. C. Irvine,
J. Wunderlich,
T. Jungwirth
Abstract:
(Ga,Mn)As and related diluted magnetic semiconductors play a major role in spintronics research because of their potential to combine ferromagnetism and semiconducting properties in one physical system. Ferromagnetism requires ~1-10% of substitutional Mn_Ga. Unintentional defects formed during growth at these high do**s significantly suppress the Curie temperature. We present experiments in wh…
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(Ga,Mn)As and related diluted magnetic semiconductors play a major role in spintronics research because of their potential to combine ferromagnetism and semiconducting properties in one physical system. Ferromagnetism requires ~1-10% of substitutional Mn_Ga. Unintentional defects formed during growth at these high do**s significantly suppress the Curie temperature. We present experiments in which by etching the (Ga,Mn)As surface oxide we achieve a dramatic reduction of annealing times necessary to optimize the ferromagnetic film after growth, and report Curie temperature of 180 K at approximately 8% of Mn_Ga. Our study elucidates the mechanism controlling the removal of the most detrimental, interstitial Mn defect. The limits and utility of electrical gating of the highly-doped (Ga,Mn)As semiconductor are not yet established; so far electric-field effects have been demonstrated on magnetization with tens of Volts applied on a top-gate, field effect transistor structure. In the second part of the paper we present a back-gate, n-GaAs/AlAs/GaMnAs transistor operating at a few Volts. Inspired by the etching study of (Ga,Mn)As films we apply the oxide-etching/re-oxidation procedure to reduce the thickness (arial density of carriers) of the (Ga,Mn)As and observe a large enhancement of the gating efficiency. We report gatable spintronic characteristics on a series of anisotropic magnetoresistance measurements.
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Submitted 14 February, 2008;
originally announced February 2008.
