Showing 1–8 of 8 results for author: Owen, G

Robust multi-scale multi-feature deep learning for atomic and defect identification in Scanning Tunneling Microscopy on H-Si(100) 2x1 surface

Authors: Maxim Ziatdinov, Udi Fuchs, James H. G. Owen, John N. Randall, Sergei V. Kalinin

Abstract: The nature of the atomic defects on the hydrogen passivated Si (100) surface is analyzed using deep learning and scanning tunneling microscopy (STM). A robust deep learning framework capable of identifying atomic species, defects, in the presence of non-resolved contaminates, step edges, and noise is developed. The automated workflow, based on the combination of several networks for image assessme… ▽ More The nature of the atomic defects on the hydrogen passivated Si (100) surface is analyzed using deep learning and scanning tunneling microscopy (STM). A robust deep learning framework capable of identifying atomic species, defects, in the presence of non-resolved contaminates, step edges, and noise is developed. The automated workflow, based on the combination of several networks for image assessment, atom-finding and defect finding, is developed to perform the analysis at different levels of description and is deployed on an operational STM platform. This is further extended to unsupervised classification of the extracted defects using the mean-shift clustering algorithm, which utilizes features automatically engineered from the combined output of neural networks. This combined approach allows the identification of localized and extended defects on the topographically non-uniform surfaces or real materials. Our approach is universal in nature and can be applied to other surfaces for building comprehensive libraries of atomic defects in quantum materials. △ Less

Submitted 11 February, 2020; originally announced February 2020.

Some observations on computer lip-reading: moving from the dream to the reality

Authors: Helen L. Bear, Gari Owen, Richard Harvey, Barry-John Theobald

Abstract: In the quest for greater computer lip-reading performance there are a number of tacit assumptions which are either present in the datasets (high resolution for example) or in the methods (recognition of spoken visual units called visemes for example). Here we review these and other assumptions and show the surprising result that computer lip-reading is not heavily constrained by video resolution,… ▽ More In the quest for greater computer lip-reading performance there are a number of tacit assumptions which are either present in the datasets (high resolution for example) or in the methods (recognition of spoken visual units called visemes for example). Here we review these and other assumptions and show the surprising result that computer lip-reading is not heavily constrained by video resolution, pose, lighting and other practical factors. However, the working assumption that visemes, which are the visual equivalent of phonemes, are the best unit for recognition does need further examination. We conclude that visemes, which were defined over a century ago, are unlikely to be optimal for a modern computer lip-reading system. △ Less

Submitted 3 October, 2017; originally announced October 2017.

Journal ref: Helen L. Bear, Gari Owen, Richard Harvey, and Barry-John Theobald. Some observations on computer lip-reading: moving from the dream to the reality. International Society for Optics and Photonics- Security and defence. 2014. p92530G--92530G

Endotaxial Si nanolines in Si(001):H

Authors: F. Bianco, J. H. G. Owen, S. A. Köster, D. Mazur, D. R. Bowler, Ch. Renner

Abstract: We present a detailed study of the structural and electronic properties of a self-assembled silicon nanoline embedded in the H-terminated silicon (001) surface, known as the Haiku stripe. The nanoline is a perfectly straight and defect free endotaxial structure of huge aspect ratio; it can grow micrometre long at a constant width of exactly four Si dimers (1.54nm). Another remarkable property is i… ▽ More We present a detailed study of the structural and electronic properties of a self-assembled silicon nanoline embedded in the H-terminated silicon (001) surface, known as the Haiku stripe. The nanoline is a perfectly straight and defect free endotaxial structure of huge aspect ratio; it can grow micrometre long at a constant width of exactly four Si dimers (1.54nm). Another remarkable property is its capacity to be exposed to air without suffering any degradation. The nanoline grows independently of any step edges at tunable densities, from isolated nanolines to a dense array of nanolines. In addition to these unique structural characteristics, scanning tunnelling microscopy and density functional theory reveal a one-dimensional state confined along the Haiku core. This nanoline is a promising candidate for the long sought after electronic solid-state one-dimensional model system to explore the fascinating quantum properties emerging in such reduced dimensionality. △ Less

Submitted 16 March, 2011; originally announced March 2011.

Comments: 8 pages, 6 figures

One dimensional Si-in-Si(001) template for single-atom wire growth

Authors: J. H. G. Owen, F. Bianco, S. A. Köster, D. Mazur, D. R. Bowler, Ch. Renner

Abstract: Single atom metallic wires of arbitrary length are of immense technological and scientific interest. We describe a novel silicon-only template enabling the self-organised growth of isolated micrometer long surface and subsurface single-atom chains. It consists of a one dimensional, defect-free reconstruction - the Haiku core, here revealed for the first time in details - self-assembled on hydrogen… ▽ More Single atom metallic wires of arbitrary length are of immense technological and scientific interest. We describe a novel silicon-only template enabling the self-organised growth of isolated micrometer long surface and subsurface single-atom chains. It consists of a one dimensional, defect-free reconstruction - the Haiku core, here revealed for the first time in details - self-assembled on hydrogenated Si(001) terraces, independent of any step edges. We discuss the potential of this Si-in-Si template as an appealing alternative to vicinal surfaces for nanoscale patterning. △ Less

Submitted 13 July, 2010; originally announced July 2010.

Comments: 3 pages, 2 figures

Self-assembled nanowires on semiconductor surfaces

Authors: J. H. G. Owen, K. Miki, D. R. Bowler

Abstract: A number of different families of nanowires which self-assemble on semiconductor surfaces have been identified in recent years. They are particularly interesting from the standpoint of nanoelectronics, which seeks non-lithographic ways of creating interconnects at the nanometre scale (though possibly for carrying signal rather than current), as well as from the standpoint of traditional material… ▽ More A number of different families of nanowires which self-assemble on semiconductor surfaces have been identified in recent years. They are particularly interesting from the standpoint of nanoelectronics, which seeks non-lithographic ways of creating interconnects at the nanometre scale (though possibly for carrying signal rather than current), as well as from the standpoint of traditional materials science and surface science. We survey these families and consider their physical and electronic structure, as well as their formation and reactivity. Particular attention is paid to rare earth nanowires and the Bi nanoline, both of which self-assemble on Si(001). △ Less

Submitted 30 October, 2005; originally announced October 2005.

Comments: 32 pages, 30 figures

Interaction between electronic structure and strain in Bi nanolines on Si(001)

Authors: J. H. G. Owen, K. Miki, D. R. Bowler

Abstract: Heteroepitaxial strain can be a controlling factor in the lateral dimensions of 1-D nanostructures. Bi nanolines on Si(001) have an atomic structure which involves a large sub-surface reconstruction, resulting in a strong elastic coupling to the surrounding silicon. We present variable-bias STM and first principles electronic structure calculations of the Bi nanolines, which investigates this in… ▽ More Heteroepitaxial strain can be a controlling factor in the lateral dimensions of 1-D nanostructures. Bi nanolines on Si(001) have an atomic structure which involves a large sub-surface reconstruction, resulting in a strong elastic coupling to the surrounding silicon. We present variable-bias STM and first principles electronic structure calculations of the Bi nanolines, which investigates this interaction. We show that the strain associated with the nanolines affects the atomic and electronic structure of at least two neighbouring Si dimers, and identify the mechanism behind this. We also present partial charge densities (projected by energy) for the nanoline with clean and hydrogenated surroundings and contrast it to the clean Si(001) surface. △ Less

Submitted 20 December, 2002; originally announced December 2002.

Comments: 10 pages, 3 figures, submitted to Surface Science

Structure of Bi nanolines: using tight-binding to search parameter space

Authors: D. R. Bowler, J. H. G. Owen

Abstract: We describe how we have used tight binding calculations as a quick, efficient tool to search for possible structures of Bi nanolines on Si(001). After identifying promising candidate structures, we have concentrated on these with \textit{ab initio} electronic structure techniques. The energetics of the tight binding are shown to be in good agreement with the density functional calculations and w… ▽ More We describe how we have used tight binding calculations as a quick, efficient tool to search for possible structures of Bi nanolines on Si(001). After identifying promising candidate structures, we have concentrated on these with \textit{ab initio} electronic structure techniques. The energetics of the tight binding are shown to be in good agreement with the density functional calculations and with experimental observations, and have proved invaluable in the search for a structure, validating the use of tightbinding as a search tool. △ Less

Submitted 28 February, 2002; originally announced February 2002.

Comments: 6 pages, 3 figures, submitted to Phys. Rev. B

Stress relief as the driving force for self-assembled Bi nanolines

Authors: J. H. G. Owen, K. Miki, H. Koh, H. W. Yeom, D. R. Bowler

Abstract: Stress resulting from mismatch between a substrate and an adsorbed material has often been thought to be the driving force for the self-assembly of nanoscale structures. Bi nanolines self-assemble on Si(001), and are remarkable for their straightness and length -- they are often more than 400 nm long, and a kink in a nanoline has never been observed. Through electronic structure calculations, we… ▽ More Stress resulting from mismatch between a substrate and an adsorbed material has often been thought to be the driving force for the self-assembly of nanoscale structures. Bi nanolines self-assemble on Si(001), and are remarkable for their straightness and length -- they are often more than 400 nm long, and a kink in a nanoline has never been observed. Through electronic structure calculations, we have found an energetically favourable structure for these nanolines that agrees with our scanning tunneling microscopy and photoemission experiments; the structure has an extremely unusual subsurface structure, comprising a double core of 7-membered rings of silicon. Our proposed structure explains all the observed features of the nanolines, and shows that surface stress resulting from the mismatch between the Bi and the Si substrate are responsible for their self-assembly. This has wider implications for the controlled growth of nanostructures on semiconductor surfaces. △ Less

Submitted 28 February, 2002; originally announced February 2002.

Comments: 4 pages, 4 figures, submitted to Phys. Rev. Lett