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Nanoscale imaging of He-ion irradiation effects on amorphous TaO$_x$ toward electroforming-free neuromorphic functions
Authors:
Olha Popova,
Steven J. Randolph,
Sabine M. Neumayer,
Liangbo Liang,
Benjamin Lawrie,
Olga S. Ovchinnikova,
Robert J. Bondi,
Matthew J. Marinella,
Bobby G. Sumpter,
Petro Maksymovych
Abstract:
Resistive switching in thin films has been widely studied in a broad range of materials. Yet the mechanisms behind electroresistive switching have been persistently difficult to decipher and control, in part due to their non-equilibrium nature. Here, we demonstrate new experimental approaches that can probe resistive switching phenomena, utilizing amorphous TaO$_x$ as a model material system. Spec…
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Resistive switching in thin films has been widely studied in a broad range of materials. Yet the mechanisms behind electroresistive switching have been persistently difficult to decipher and control, in part due to their non-equilibrium nature. Here, we demonstrate new experimental approaches that can probe resistive switching phenomena, utilizing amorphous TaO$_x$ as a model material system. Specifically, we apply Scanning Microwave Impedance Microscopy (sMIM) and cathodoluminescence (CL) microscopy as direct probes of conductance and electronic structure, respectively. These methods provide direct evidence of the electronic state of TaO$_x$ despite its amorphous nature. For example CL identifies characteristic impurity levels in TaO$_x$, in agreement with first principles calculations. We applied these methods to investigate He-ion-beam irradiation as a path to activate conductivity of materials and enable electroforming-free control over resistive switching. However, we find that even though He-ions begin to modify the nature of bonds even at the lowest doses, the films conductive properties exhibit remarkable stability with large displacement damage and they are driven to metallic states only at the limit of structural decomposition. Finally, we show that electroforming in a nanoscale junction can be carried out with a dissipated power of < 20 nW, a much smaller value compared to earlier studies and one that minimizes irreversible structural modifications of the films. The multimodal approach described here provides a new framework toward the theory/experiment guided design and optimization of electroresistive materials.
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Submitted 20 July, 2023;
originally announced July 2023.
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A roadmap for edge computing enabled automated multidimensional transmission electron microscopy
Authors:
Debangshu Mukherjee,
Kevin M. Roccapriore,
Anees Al-Najjar,
Ayana Ghosh,
Jacob D. Hinkle,
Andrew R. Lupini,
Rama K. Vasudevan,
Sergei V. Kalinin,
Olga S. Ovchinnikova,
Maxim A. Ziatdinov,
Nageswara S. Rao
Abstract:
The advent of modern, high-speed electron detectors has made the collection of multidimensional hyperspectral transmission electron microscopy datasets, such as 4D-STEM, a routine. However, many microscopists find such experiments daunting since such datasets' analysis, collection, long-term storage, and networking remain challenging. Some common issues are the large and unwieldy size of the said…
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The advent of modern, high-speed electron detectors has made the collection of multidimensional hyperspectral transmission electron microscopy datasets, such as 4D-STEM, a routine. However, many microscopists find such experiments daunting since such datasets' analysis, collection, long-term storage, and networking remain challenging. Some common issues are the large and unwieldy size of the said datasets, often running into several gigabytes, non-standardized data analysis routines, and a lack of clarity about the computing and network resources needed to utilize the electron microscope fully. However, the existing computing and networking bottlenecks introduce significant penalties in each step of these experiments, and thus, real-time analysis-driven automated experimentation for multidimensional TEM is exceptionally challenging. One solution is integrating microscopy with edge computing, where moderately powerful computational hardware performs the preliminary analysis before handing off the heavier computation to HPC systems. In this perspective, we trace the roots of computation in modern electron microscopy, demonstrate deep learning experiments running on an edge system, and discuss the networking requirements for tying together microscopes, edge computers, and HPC systems.
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Submitted 5 October, 2022;
originally announced October 2022.
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Photoinduced iodide repulsion and halides-demixing in layered perovskites
Authors:
Yongtao Liu,
Miaosheng Wang,
Anton V. Ievlev,
Mahshid Ahmadi,
Bin Hu,
Olga S. Ovchinnikova
Abstract:
Mixing halides in metal halide perovskites (MHPs) is an effective approach to adjust MHPs bandgap for applications in tandem solar cells. However, mixed-halide (MH-) MHPs undergo light-induced-phase-segregation (LIPS) under continuous illumination. Therefore, understanding the mechanism of LIPS is necessary for develo** stable MH-MHPs. In this work, we investigated LIPS in layered (L) MHPs and d…
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Mixing halides in metal halide perovskites (MHPs) is an effective approach to adjust MHPs bandgap for applications in tandem solar cells. However, mixed-halide (MH-) MHPs undergo light-induced-phase-segregation (LIPS) under continuous illumination. Therefore, understanding the mechanism of LIPS is necessary for develo** stable MH-MHPs. In this work, we investigated LIPS in layered (L) MHPs and discovered a critical role of spacer cations in LIPS. Through probing chemical changes of LIPS, we unveil light-induced-iodide-repulsion and the formation of Br-rich-phase in illuminated regions during LIPS. This discovery also gives insight into LIPS process in three dimensional (3D) MHPs. By further investigating LIPS in 3D MHPs, we reveal that LIPS induces not only the formation of Br-rich and I-rich domains but also an overall change of halide distribution along the film thickness direction, which can affect the electronic energy alignment and consequently MHPs devices performance. Moreover, LIPS is more significant in the bulk due to larger population of photogenerated charge carriers. Overall, this study reveals the chemical mechanism of LIPS in MHPs and its potential effect on device performance, offering insight into understanding LIPS mechanism and improving the stability of MHPs.
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Submitted 1 July, 2021;
originally announced July 2021.
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Probing static discharge of polymer surfaces with nanoscale resolution
Authors:
Nikolay Borodinov,
Anton V. Ievlev,
Jan-Michael Carrillo,
Andrea Calamari,
Marc Mamak,
John Mulcahy,
Bobby G. Sumpter,
Olga S. Ovchinnikova,
Petro Maksymovych
Abstract:
Triboelectric charging strongly affects the operation cycle and handling of materials and can be used to harvest mechanical energy through triboelectric nanogenerator set-up. Despite ubiquity of triboelectric effects, a lot of mechanisms surrounding the relevant phenomena remain to be understood. Continued progress will rely on the development of rapid and reliable methods to probe accumulation an…
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Triboelectric charging strongly affects the operation cycle and handling of materials and can be used to harvest mechanical energy through triboelectric nanogenerator set-up. Despite ubiquity of triboelectric effects, a lot of mechanisms surrounding the relevant phenomena remain to be understood. Continued progress will rely on the development of rapid and reliable methods to probe accumulation and dynamics of static charges. Here, we demonstrate in-situ quantification of tribological charging with nanoscale resolution, that is applicable to a wide range of dielectric systems. We apply this method to differentiate between strongly and weakly charging compositions of industrial grade polymers. The method highlights the complex phenomena of electrostatic discharge upon contact formation to pre-charged surfaces, and directly reveals the mobility of electrostatic charge on the surface. Systematic characterization of commercial polyethylene terephthalate samples revealed the compositions with the best antistatic properties and provided an estimate of characteristic charge density up to 5x10-5 C/m2. Large-scale molecular dynamics simulations were used to resolve atomistic level structural and dynamical details revealing enrichment of oxygen containing groups near the air-interface where electrostatic charges are likely to accumulate.
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Submitted 13 June, 2018;
originally announced June 2018.
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Map** fast evolution of transient surface photovoltage dynamics using G-Mode Kelvin probe force microscopy
Authors:
Liam Collins,
Mahshid Ahmadi,
Jiajun Qin,
Olga S. Ovchinnikova,
Bin Hu,
Stephen Jesse,
Sergei V. Kalinin
Abstract:
Optoelectronic phenomena in materials such as organic/inorganic hybrid perovskites depend on a complex interplay between light induced carrier generation and fast (electronic) and slower (ionic) processes, all of which are known to be strongly affected by structural inhomogeneities such as interfaces and grain boundaries. Here, we develop a time resolved Kelvin probe force microscopy (KPFM) approa…
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Optoelectronic phenomena in materials such as organic/inorganic hybrid perovskites depend on a complex interplay between light induced carrier generation and fast (electronic) and slower (ionic) processes, all of which are known to be strongly affected by structural inhomogeneities such as interfaces and grain boundaries. Here, we develop a time resolved Kelvin probe force microscopy (KPFM) approach, based on the G-Mode SPM platform, allowing quantification of surface photovoltage (SPV) with microsecond temporal and nanoscale spatial resolution. We demonstrate the approach on methylammonium lead bromide (MAPbBr3) thin films and further highlight the usefulness of unsupervised clustering methods to quickly discern spatial variability in the information rich SPV dataset. Using this technique, we observe concurrent spatial and ultra-fast temporal variations in the SPV generated across the thin film, indicating that structure is likely responsible for the heterogenous behavior.
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Submitted 16 February, 2018;
originally announced February 2018.
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Stretching Epitaxial La0.6Sr0.4CoO3-δ for Fast Oxygen Reduction
Authors:
Dongkyu Lee,
Ryan Jacobs,
Youngseok Jee,
S. S. Ambrose Seo,
Changhee Sohn,
Anton V. Ievlev,
Olga S. Ovchinnikova,
Kevin Huang,
Dane Morgan,
Ho Nyung Lee
Abstract:
The slow kinetics of the oxygen reduction reaction (ORR) is one of the key challenges in develo** high performance energy devices, such as solid oxide fuel cells. Straining a film by growing on a lattice-mismatched substrate has been a conventional approach to enhance the ORR activity. However, due to the limited choice of electrolyte substrates to alter the degree of strain, a systematic study…
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The slow kinetics of the oxygen reduction reaction (ORR) is one of the key challenges in develo** high performance energy devices, such as solid oxide fuel cells. Straining a film by growing on a lattice-mismatched substrate has been a conventional approach to enhance the ORR activity. However, due to the limited choice of electrolyte substrates to alter the degree of strain, a systematic study in various materials has been a challenge. Here, we explore the strain modulation of the ORR kinetics by growing epitaxial La0.6Sr0.4CoO3-δ (LSCO) films on yttria-stabilized zirconia substrates with the film thickness below and above the critical thickness for strain relaxation. Two orders of magnitude higher ORR kinetics is achieved in an ultra-thin film with ~0.8% tensile strain as compared to unstrained films. Time-of-flight secondary ion mass spectrometry depth profiling confirms that the Sr surface segregation is not responsible for the enhanced ORR in strained films. We attribute this enhancement of ORR kinetics to the increase in oxygen vacancy concentration in the tensile-strained LSCO film owing to the reduced activation barrier for oxygen surface exchange kinetics. Density functional theory calculations reveal an upshift of the oxygen 2p-band center relative to the Fermi level by tensile strain, indicating the origin of the enhanced ORR kinetics.
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Submitted 15 December, 2017;
originally announced December 2017.
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Engineering the thermal conductivity along an individual silicon nanowire by selective helium ion irradiation
Authors:
Yunshan Zhao,
Dan Liu,
Jie Chen,
Liyan Zhu,
Alex Belianinov,
Olga S. Ovchinnikova,
Raymond R. Unocic,
Matthew J. Burch,
Songkil Kim,
Hanfang Hao,
Daniel S Pickard,
Baowen Li,
John T L Thong
Abstract:
The ability to engineer the thermal conductivity of materials allows us to control the flow of heat and derive novel functionalities such as thermal rectification, thermal switching, and thermal cloaking. While this could be achieved by making use of composites and metamaterials at bulk scales, engineering the thermal conductivity at micro- and nano-scale dimensions is considerably more challengin…
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The ability to engineer the thermal conductivity of materials allows us to control the flow of heat and derive novel functionalities such as thermal rectification, thermal switching, and thermal cloaking. While this could be achieved by making use of composites and metamaterials at bulk scales, engineering the thermal conductivity at micro- and nano-scale dimensions is considerably more challenging. In this work we show that the local thermal conductivity along a single Si nanowire can be tuned to a desired value (between crystalline and amorphous limits) with high spatial resolution through selective helium ion irradiation with a well-controlled dose. The underlying mechanism is understood through molecular dynamics simulations and quantitative phonon-defect scattering rate analysis, where the behavior of thermal conductivity with dose is attributed to the accumulation and agglomeration of scattering centers at lower doses. Beyond a threshold dose, a crystalline-amorphous transition was observed.
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Submitted 18 May, 2017;
originally announced May 2017.
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Controlling the topological sector of magnetic solitons in exfoliated Cr$_{1/3}$NbS$_2$ crystals
Authors:
L. Wang,
N. Chepiga,
D. -K. Ki,
L. Li,
F. Li,
W. Zhu,
Y. Kato,
O. S. Ovchinnikova,
F. Mila,
I. Martin,
D. Mandrus,
A. F. Morpurgo
Abstract:
We investigate manifestations of topological order in monoaxial helimagnet Cr$_{1/3}$NbS$_2$ by performing transport measurements on ultra-thin crystals. Upon swee** the magnetic field perpendicularly to the helical axis, crystals thicker than one helix pitch (48 nm) but much thinner than the magnetic domain size ($\sim$1 $μ$m) are found to exhibit sharp and hysteretic resistance jumps. We show…
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We investigate manifestations of topological order in monoaxial helimagnet Cr$_{1/3}$NbS$_2$ by performing transport measurements on ultra-thin crystals. Upon swee** the magnetic field perpendicularly to the helical axis, crystals thicker than one helix pitch (48 nm) but much thinner than the magnetic domain size ($\sim$1 $μ$m) are found to exhibit sharp and hysteretic resistance jumps. We show that these phenomena originate from transitions between topological sectors with different number of magnetic solitons. This is confirmed by measurements on crystals thinner than 48 nm --in which the topological sector cannot change-- that do not exhibit any jump or hysteresis. Our results show the ability to deterministically control the topological sector of finite-size Cr$_{1/3}$NbS$_2$ and to detect inter-sector transitions by transport measurements.
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Submitted 10 April, 2017;
originally announced April 2017.
