Showing 1–17 of 17 results for author: Oughaddou, H

Direct observation of electronic band gap and hot carrier dynamics in GeAs semiconductor

Authors: Zailan Zhang, Jiuxiang Zhang, Gangqiang Zhou, Jiyuan Xu, Xiao Zhang, Hamid Oughaddou, Weiyan Qi, Evangelos Papalazarou, Luca Perfetti, Zhesheng Chen, Azzedine Bendounan, Marino Marsi

Abstract: Germanium arsenide (GeAs) is a layered semiconductor with remarkably anisotropic physical, thermoelectric and optical properties, and a promising candidate for multifunctional devices based on in-plane polarization dependent response. Understanding the underlying mechanism of such devices requires the knowledge of GeAs electronic band structure and of the hot carrier dynamics in its conduction ban… ▽ More Germanium arsenide (GeAs) is a layered semiconductor with remarkably anisotropic physical, thermoelectric and optical properties, and a promising candidate for multifunctional devices based on in-plane polarization dependent response. Understanding the underlying mechanism of such devices requires the knowledge of GeAs electronic band structure and of the hot carrier dynamics in its conduction band, whose details are still unclear. In this work, we investigated the properties of occupied and photoexcited states of GeAs in energy-momentum space, by combining scanning tunneling spectroscopy (STS), angle-resolved photoemission spectroscopy (ARPES) and time-resolved ARPES. We found that, GeAs is an indirect gap semiconductor having an electronic gap of 0.8 eV, for which the conduction band minimum (CBM) is located at the Gamma point while the valence band maximum (VBM) is out of Gamma. A Stark broadening of the valence band is observed immediately after photoexcitation, which can be attributed to the effects of the electrical field at the surface induced by inhomogeneous screening. Moreover, the hot electrons relaxation time of 1.56 ps down to the CBM which is dominated from both inter-valley and intra-valley coupling. Besides their relevance for our understanding of GeAs, these findings present general interest for the design on high performance thermoelectric and optoelectronic devices based on 2D semiconductors. △ Less

Submitted 7 March, 2024; originally announced March 2024.

Silicene nanoribbons on an insulating thin film

Authors: Khalid Quertite, Hanna Enriquez, Nicolas Trcera, Yongfeng Tong, Azzedine Bendounan, Andrew J. Mayne, Gérald Dujardin, Pierre Lagarde, Abdallah El kenz, Abdelilah Benyoussef, Yannick J. Dappe, Abdelkader Kara, Hamid Oughaddou

Abstract: Silicene, a new two-dimensional (2D) material has attracted intense research because of the ubiquitous use of silicon in modern technology. However, producing free-standing silicene has proved to be a huge challenge. Until now, silicene could be synthesized only on metal surfaces where it naturally forms strong interactions with the metal substrate that modify its electronic properties. Here, we r… ▽ More Silicene, a new two-dimensional (2D) material has attracted intense research because of the ubiquitous use of silicon in modern technology. However, producing free-standing silicene has proved to be a huge challenge. Until now, silicene could be synthesized only on metal surfaces where it naturally forms strong interactions with the metal substrate that modify its electronic properties. Here, we report the first experimental evidence of silicene sheet on an insulating NaCl thin film. This work represents a major breakthrough; for the study of the intrinsic properties of silicene, and by extension to other 2D materials that have so far only been grown on metal surfaces. △ Less

Submitted 27 December, 2020; originally announced December 2020.

Journal ref: Advanced Functional Materials, 2020

Phosphorus Pentamers: Floating Nanoflowers form a 2D Network

Authors: Wei Zhang, Hanna Enriquez, Yongfeng Tong, Andrew J. Mayne, Azzedine Bendounan, Yannick J. Dappe, Abdelkader Kara, Gérald Dujardin, Hamid Oughaddou

Abstract: We present an experimental investigation of a new polymorphic 2D single layer of phosphorus on Ag(111). The atomically-resolved scanning tunneling microscopy (STM) images show a new 2D material composed of freely-floating phosphorus pentamers organized into a 2D layer, where the pentamers are aligned in close-packed rows. The scanning tunneling spectroscopy (STS) measurements reveal a semiconducti… ▽ More We present an experimental investigation of a new polymorphic 2D single layer of phosphorus on Ag(111). The atomically-resolved scanning tunneling microscopy (STM) images show a new 2D material composed of freely-floating phosphorus pentamers organized into a 2D layer, where the pentamers are aligned in close-packed rows. The scanning tunneling spectroscopy (STS) measurements reveal a semiconducting character with a band gap of 1.20 eV. This work presents the formation at low temperature (LT) of a new polymorphic 2D phosphorus layer composed of a floating 2D pentamer structure. The smooth curved terrace edges and a lack of any clear crystallographic orientation with respect to the Ag(111) substrate at room temperature indicates a smooth potential energy surface that is reminiscent of a liquid-like growth phase. This is confirmed by density functional theory (DFT) calculations that find a small energy barrier of only 0.17 eV to surface diffusion of the pentamers (see Supplemental Material). The formation of extended, homogeneous domains is a key ingredient to opening a new avenue to integrate this new 2D material into electronic devices. △ Less

Submitted 4 November, 2020; originally announced November 2020.

Journal ref: Advanced Functional Materials, 30, 2004531 (2020)

Tip-induced oxidation of silicene nano-ribbons

Authors: Mohammed Rachid Tchalala Hanna Enriquez, Azzedine Bendounan, Andrew J. Mayne, Gérald Dujardin, Abdelkader Kara, Mustapha Ait Ali, Hamid Oughaddou

Abstract: We report on the oxidation of self-assembled silicene nanoribbons grown on the Ag(110) surface using Scanning Tunneling Microscopy and High-Resolution Photoemission Spectroscopy. The results show that silicene nanoribbons present a strong resistance towards oxidation using molecular oxygen. This can be overcome by increasing the electric field in the STM tunnel junction above a threshold of +2.6 V… ▽ More We report on the oxidation of self-assembled silicene nanoribbons grown on the Ag(110) surface using Scanning Tunneling Microscopy and High-Resolution Photoemission Spectroscopy. The results show that silicene nanoribbons present a strong resistance towards oxidation using molecular oxygen. This can be overcome by increasing the electric field in the STM tunnel junction above a threshold of +2.6 V to induce oxygen dissociation and reaction. The higher reactivity of the silicene nanoribbons towards atomic oxygen is observed as expected. The HR-PES confirm these observations: Even at high exposures of molecular oxygen, the Si 2p core-level peaks corresponding to pristine silicene remain dominant, reflecting a very low reactivity to molecular oxygen. Complete oxidation is obtained following exposure to high doses of atomic oxygen; the Si 2p core level peak corresponding to pristine silicene disappears. △ Less

Submitted 24 June, 2020; originally announced June 2020.

Journal ref: Nanoscale Advances, 2, 2309 - 2314 (2020) Nanoscale Advances, 2, 2309 - 2314 (2020)

Compelling experimental evidence of a Dirac cone in the electronic structure of a 2D Silicon layer

Authors: S. Sadeddine, H. Enriquez, A. Bendounan, P. Das, I. Vobornik, A. Kara, A. Mayne, F. Sirotti, G. Dujardin, H. Oughaddou

Abstract: The remarkable properties of graphene stem from its two-dimensional (2D) structure, with a linear dispersion of the electronic states at the corners of the Brillouin zone (BZ) forming a Dirac cone. Since then, other 2D materials have been suggested based on boron, silicon, germanium, phosphorus, tin, and metal di-chalcogenides. Here, we present an experimental investigation of a single silicon lay… ▽ More The remarkable properties of graphene stem from its two-dimensional (2D) structure, with a linear dispersion of the electronic states at the corners of the Brillouin zone (BZ) forming a Dirac cone. Since then, other 2D materials have been suggested based on boron, silicon, germanium, phosphorus, tin, and metal di-chalcogenides. Here, we present an experimental investigation of a single silicon layer on Au(111) using low energy electron diffraction (LEED), high resolution angle-resolved photoemission spectroscopy (HR-ARPES), and scanning tunneling microscopy (STM). The HR-ARPES data show compelling evidence that the silicon based 2D overlayer is responsible for the observed linear dispersed feature in the valence band, with a Fermi velocity of v_F ~10^(+6) m.s^(-1) comparable to that of graphene. The STM images show extended and homogeneous domains, offering a viable route to the fabrication of silicene-based opto-electronic devices. △ Less

Submitted 3 November, 2018; originally announced November 2018.

MSC Class: 82D80

Journal ref: Scientific Reports, 7, 44400 (2017)

Epitaxial Synthesis of Blue Phosphorene

Authors: Wei Zhang, Hanna Enriquez, Yongfeng Tong, Azzedine Bendounan, Abdelkader Kara, Ari P. Seitsonen, Andrew J. Mayne, Gérald Dujardin, Hamid Oughaddou

Abstract: Phosphorene is a new two-dimensional material composed of a single or few atomic layers of black phosphorus. Phosphorene has both an intrinsic tunable direct band gap and high carrier mobility values, which make it suitable for a large variety of optical and electronic devices. However, the synthesis of single-layer phosphorene is a major challenge. The standard procedure to obtain phosphorene is… ▽ More Phosphorene is a new two-dimensional material composed of a single or few atomic layers of black phosphorus. Phosphorene has both an intrinsic tunable direct band gap and high carrier mobility values, which make it suitable for a large variety of optical and electronic devices. However, the synthesis of single-layer phosphorene is a major challenge. The standard procedure to obtain phosphorene is by exfoliation. More recently, the epitaxial growth of single-layer phosphorene on Au(111) has been investigated by molecular beam epitaxy and the obtained structure has been described as a blue-phosphorene sheet. In the present study, large areas of high-quality monolayer phosphorene, with a band gap value at least equal to 0.8 eV, have been synthesized on Au(111). Our experimental investigations, coupled with DFT calculations, give evidence of two distinct phases of blue phosphorene on Au(111), instead of one as previously reported, and their atomic structures have been determined. △ Less

Submitted 3 November, 2018; originally announced November 2018.

Comments: This paper reports on the epitaxial synthesis of blue phosphorene

MSC Class: 82D80

Journal ref: SMALL, 1804066 (2018)

Silicon Sheets By Redox Assisted Chemical Exfoliation

Authors: Mohamed Rachid Tchalala, Mustapha Ait Ali, Hanna Enriquez, Abdelkader Kara, Abdessadek Lachgar, Said Yagoubi, Eddy Foy, Enrique Vega, Azzedine Bendounan, Mathieu G. Silly, Fausto Sirotti, Serge Nitshe, Damien Chaudanson, Haik Jamgotchian, Bernard Aufray, Andrew J. Mayne, Gérald Dujardin, Hamid Oughaddou

Abstract: In this paper, we report the direct chemical synthesis of silicon sheets in gram-scale quantities by chemical exfoliation of pre-processed calcium di-silicide (CaSi2). We have used a combination of X-ray photoelectron spectroscopy, transmission electron microscopy and Energy-dispersive X-ray spectroscopy to characterize the obtained silicon sheets. We found that the clean and crystalline silicon s… ▽ More In this paper, we report the direct chemical synthesis of silicon sheets in gram-scale quantities by chemical exfoliation of pre-processed calcium di-silicide (CaSi2). We have used a combination of X-ray photoelectron spectroscopy, transmission electron microscopy and Energy-dispersive X-ray spectroscopy to characterize the obtained silicon sheets. We found that the clean and crystalline silicon sheets show a 2-dimensional hexagonal graphitic structure. △ Less

Submitted 29 September, 2013; originally announced September 2013.

Comments: Accepted in J. Phys.: Condens. Matter

Thermal stability of standalone silicene sheet

Authors: Virgile Bocchetti, Hung T. Diep, H. Enriquez, H. Oughaddou, A. Kara

Abstract: Extensive Monte Carlo simulations are carried out to study thermal stability of an infinite standalone silicon sheet. We used the Tersoff potential that has been used with success for silicon at low temperatures. However, the melting temperature $T_m$ calculated with the original parameters provided by Tersoff is too high with respect to the experimental one. Agrawal, Raff and Komanduri have propo… ▽ More Extensive Monte Carlo simulations are carried out to study thermal stability of an infinite standalone silicon sheet. We used the Tersoff potential that has been used with success for silicon at low temperatures. However, the melting temperature $T_m$ calculated with the original parameters provided by Tersoff is too high with respect to the experimental one. Agrawal, Raff and Komanduri have proposed a modified set of parameters to reduce $T_m$. For comparison, we have used these two sets of parameters to study the stability and the melting of a standalone 2D sheet of silicon called "silicene", by analogy with graphene for the carbon sheet. We find that 2D crystalline silicene is stable up to a high temperature unlike in 2D systems with isotropic potentials such as Lennard-Jones. The differences in the obtained results using two sets of parameters are striking. △ Less

Submitted 16 September, 2013; originally announced September 2013.

Combined AFM and STM measurements of a silicene sheet grown on Ag(111) surface

Authors: Zsolt Majzik, Mohamed Rachid Tchalala, Martin Švec, Prokop Hapala, Hanna Enriquez, Abdelkader Kara, Andrew J. Mayne, Gérald Dujardin, Pavel Jelínek, Hamid Oughaddou

Abstract: In this Letter, we present the first non-contact atomic force microscopy (nc-AFM) of a silicene on silver (Ag) surface, obtained by combining non-contact atomic force microscopy (nc-AFM) and scanning tunneling microscopy (STM). STM images over large areas of silicene grown on Ag(111) surface show both (sqrt13xsqrt13)R13.9° and (4x4) superstructures. For the widely observed (4x4) structure, the nc-… ▽ More In this Letter, we present the first non-contact atomic force microscopy (nc-AFM) of a silicene on silver (Ag) surface, obtained by combining non-contact atomic force microscopy (nc-AFM) and scanning tunneling microscopy (STM). STM images over large areas of silicene grown on Ag(111) surface show both (sqrt13xsqrt13)R13.9° and (4x4) superstructures. For the widely observed (4x4) structure, the nc-AFM topography shows an atomic-scale contrast inversion as the tip-surface distance is decreased. At the shortest tip-surface distance, the nc-AFM topography is very similar to the STM one. The observed structure in the nc-AFM topography is compatible with only one out of two silicon atoms being visible. This indicates unambiguously a strong buckling of the silicene honeycomb layer. △ Less

Submitted 24 June, 2013; originally announced June 2013.

Journal ref: J.Phys.: Condens. Matter, 25, 225301 (2013)

Adsorption of silicon on Au(110): an ordered two dimensional surface alloy

Authors: Hanna Enrique, Andrew Mayne, Abdelkader Kara, Sébastien Vizzini, Silvan Roth, Boubekeur Lalmi, Ari P Seitsonen, Bernard Aufray, Thomas Greber, Rachid Belkhou, Gérald Dujardin, Hamid Oughaddou

Abstract: We report on experimental evidence for the formation of a two dimensional Si/Au(110) surface alloy. In this study, we have used a combination of scanning tunneling microscopy, low energy electron diffraction, Auger electron spectroscopy and ab initio calculations based on density functional theory. A highly ordered and stable Si-Au surface alloy is observed subsequent to growth of a sub-monolayer… ▽ More We report on experimental evidence for the formation of a two dimensional Si/Au(110) surface alloy. In this study, we have used a combination of scanning tunneling microscopy, low energy electron diffraction, Auger electron spectroscopy and ab initio calculations based on density functional theory. A highly ordered and stable Si-Au surface alloy is observed subsequent to growth of a sub-monolayer of silicon on an Au(110) substrate kept above the eutectic temperature. △ Less

Submitted 15 February, 2013; originally announced February 2013.

Journal ref: Applied Physics letters, 101, 021605 (2012)

Formation of one-dimensional self-assembled silicon nanoribbons on Au(110)-(2x1)

Authors: Mohamed Rachid Tchalal, Hanna Enriquez, Andrew J. Mayne, Abdelkader Kara, Silvan Roth, Mathieu G. Silly, Azzedine Bendounan, Fausto Sirotti, Thomas Greber, Bernard Aufray, Gérald Dujardin, Mustapha Ait Ali, Hamid Oughaddou

Abstract: We report results on the self-assembly of silicon nanoribbons on the (2x1) reconstructed Au(110) surface under ultra-high vacuum conditions. Upon adsorption of 0.2 monolayer (ML) of silicon the (2x1) reconstruction of Au(110) is replaced by an ordered surface alloy. Above this coverage a new superstructure is revealed by low electron energy diffraction (LEED) which becomes sharper at 0.3 Si ML. Th… ▽ More We report results on the self-assembly of silicon nanoribbons on the (2x1) reconstructed Au(110) surface under ultra-high vacuum conditions. Upon adsorption of 0.2 monolayer (ML) of silicon the (2x1) reconstruction of Au(110) is replaced by an ordered surface alloy. Above this coverage a new superstructure is revealed by low electron energy diffraction (LEED) which becomes sharper at 0.3 Si ML. This superstructure corresponds to Si nanoribbons all oriented along the [-110] direction as revealed by LEED and scanning tunneling microscopy (STM). STM and high-resolution photoemission spectroscopy indicate that the nanoribbons are flat and predominantly 1.6 nm wide. In addition the silicon atoms show signatures of two chemical environments corresponding to the edge and center of the ribbons. △ Less

Submitted 14 February, 2013; originally announced February 2013.

Comments: Under publication in Applied Physics Letters

Silicene Structures on Silver Surfaces

Authors: Hanna Enriquez, Sébastien Vizzini, Abdelkader Kara, Boubekeur Lalmi, Hamid Oughaddou

Abstract: In this paper we report on several structures of silicene, the analog of graphene for silicon, on the silver surfaces Ag(100), Ag(110) and Ag(111). Deposition of Si produces honeycomb structures on these surfaces. In particular, we present an extensive theoretical study of silicene on Ag(111) for which several recent experimental studies have been published. Different silicene structures were obta… ▽ More In this paper we report on several structures of silicene, the analog of graphene for silicon, on the silver surfaces Ag(100), Ag(110) and Ag(111). Deposition of Si produces honeycomb structures on these surfaces. In particular, we present an extensive theoretical study of silicene on Ag(111) for which several recent experimental studies have been published. Different silicene structures were obtained only by varying the silicon coverage and/or its atomic arrangement. All the structures studied show that silicene is buckled, with a Si-Si nearest neighbor distance varying between 2.28 and 2.5 A° . Due to the buckling in the silicene sheet, the apparent (lateral) Si-Si distance can be as low as 1.89 A° . We also found that for a given coverage and symmetry, one may observe different scanning tunneling microscopy images corresponding to structures that differ by only a translation. △ Less

Submitted 27 June, 2012; originally announced June 2012.

Comments: To be published in in J. Phys.: Condens. Matter "Special Issue on Ultrathin layers of graphene, h-BN and other honeycomb structures"

Epitaxial Growth of a Silicene Sheet

Authors: Boubekeur Lalmi, Hamid Oughaddou, Hanna Enriquez, Abdelkader Karae, Sébastien Vizzini, Bénidicte Ealet, Bernard Aufray

Abstract: Using atomic resolved scanning tunneling microscopy, we present here the experimental evidence of a silicene sheet (graphene like structure) epitaxially grown on a close-packed silver surface (Ag(111)). This has been achieved via direct condensation of a silicon atomic flux onto the single-crystal substrate in ultra-high vacuum conditions. A highly ordered silicon structure, arranged within a hone… ▽ More Using atomic resolved scanning tunneling microscopy, we present here the experimental evidence of a silicene sheet (graphene like structure) epitaxially grown on a close-packed silver surface (Ag(111)). This has been achieved via direct condensation of a silicon atomic flux onto the single-crystal substrate in ultra-high vacuum conditions. A highly ordered silicon structure, arranged within a honeycomb lattice is synthesized and presenting two silicon sub-lattices occupying positions at different heights (0.02 nm) indicating possible sp2-sp3 hybridizations. △ Less

Submitted 16 June, 2013; v1 submitted 2 April, 2012; originally announced April 2012.

Journal ref: Applied Physics letters, 97, 223109 (2010)

Metallization of the β-SiC(100) 3\times2 Surface: a DFT Investigation

Authors: James Westover, Hamid Oughaddou, Hanna Enriquez, Abdelkader Kara

Abstract: Using density functional theory (DFT) we report results for the electronic structure and vibrational dynamics of hydrogenated β reconstructed Silicon Carbide (001) (3x2) surfaces with various levels of hydrogenation. These results were obtained using density functional theory with a generalized gradient exchange correlation function. The calculations reveal that metallization can be achieved via h… ▽ More Using density functional theory (DFT) we report results for the electronic structure and vibrational dynamics of hydrogenated β reconstructed Silicon Carbide (001) (3x2) surfaces with various levels of hydrogenation. These results were obtained using density functional theory with a generalized gradient exchange correlation function. The calculations reveal that metallization can be achieved via hydrogen atoms occupying the second silicon layer. Further increases of hydrogen occupation on the second silicon layer sites result in a loss of this metallization. For the former scenario, where metallization occurs, we found a new vibrational mode at 1870 cm-1, which is distinct from the mode associated with hydrogen atoms on the first layer. Furthermore, we found the diffusion barrier for a hydrogen atom to move from the second to the third silicon layer to be 258 meV. △ Less

Submitted 30 August, 2011; originally announced August 2011.

Nano-Objects Develo** at Graphene/Silicon Carbide Interface

Authors: S. Vizzini, H. Enriquez, S. Chiang, H. Oughaddou, P. Soukiassian

Abstract: We use scanning tunneling microscopy and spectroscopy to study epitaxial graphene grown on a C-face 4H-SiC(000-1) substrate. The results reveal amazing nano-objects at the graphene/SiC interface leading to electronic interface states. Their height profiles suggest that these objects are made of packed carbon nanotubes confined vertically and forming mesas at the SiC surface. We also find nano-cr… ▽ More We use scanning tunneling microscopy and spectroscopy to study epitaxial graphene grown on a C-face 4H-SiC(000-1) substrate. The results reveal amazing nano-objects at the graphene/SiC interface leading to electronic interface states. Their height profiles suggest that these objects are made of packed carbon nanotubes confined vertically and forming mesas at the SiC surface. We also find nano-cracks covered by the graphene layer that, surprisingly, is not broken, with no electronic interface state. Therefore, unlike the above nano-objects, these cracks should not affect the carrier mobility. △ Less

Submitted 11 November, 2009; originally announced November 2009.

Comments: 9 pages, 5 figures

Epitaxial growth of graphene-like silicon nano-ribbons

Authors: Abdelkader Kara, Christel Leandri, Benedicte Ealet, Hamid Oughaddou, Bernard Aufray, Guy Le Lay

Abstract: Graphene, a flat monolayer of carbon atoms tightly packed into a two-dimensional honeycomb lattice (a one atom thick graphite sheet), is presently the hottest material in nanoscience and nanotechnology. Its challenging hypothetical reflection in the silicon world is coined silicene; Here, we have demonstrated that the silicon nano-wires self-aligned in a massively parallel array recently observe… ▽ More Graphene, a flat monolayer of carbon atoms tightly packed into a two-dimensional honeycomb lattice (a one atom thick graphite sheet), is presently the hottest material in nanoscience and nanotechnology. Its challenging hypothetical reflection in the silicon world is coined silicene; Here, we have demonstrated that the silicon nano-wires self-aligned in a massively parallel array recently observed by STM on Ag(110), are true silicene nano-ribbons. Our calculations using density functional theory clearly show that Si atoms tends to form hexagons on top the silver substrate in a honeycomb, graphene-like arrangement. △ Less

Submitted 17 November, 2008; originally announced November 2008.

Physics of Silicene Stripes

Authors: A. Kara, C. Leandri, M. E. Davila, P. de Padova, B. Ealet, H. Oughaddou, B. Aufray, G. Le Lay

Abstract: Silicene, a monolayer of silicon atoms tightly packed into a two-dimensional honeycomb lattice, is the challenging hypothetical reflection in the silicon realm of graphene, a one-atom thick graphite sheet, presently the hottest material in condensed matter physics. If existing, it would also reveal a cornucopia of new physics and potential applications. Here, we reveal the epitaxial growth of si… ▽ More Silicene, a monolayer of silicon atoms tightly packed into a two-dimensional honeycomb lattice, is the challenging hypothetical reflection in the silicon realm of graphene, a one-atom thick graphite sheet, presently the hottest material in condensed matter physics. If existing, it would also reveal a cornucopia of new physics and potential applications. Here, we reveal the epitaxial growth of silicene stripes self-aligned in a massively parallel array on the anisotropic silver (110) surface. This crucial step in the silicene gold rush could give a new kick to silicon on the electronics road-map and opens the most promising route towards wide-ranging applications. A hint of superconductivity in these silicene stripes poses intriguing questions related to the delicate interplay between paired correlated fermions, massless Dirac fermions and bosonic quasi-particules in low dimensions. △ Less

Submitted 16 November, 2008; originally announced November 2008.