Showing 1–46 of 46 results for author: Ouerghi, A

Magnetic evolution of Cr$_2$Te$_3$ epitaxially grown on graphene with post-growth annealing

Authors: Quentin Guillet, Hervé Boukari, Fadi Choueikani, Philippe Ohresser, Abdelkarim Ouerghi, Florie Mesple, Vincent T. Renard, Jean-François Jacquot, Denis Jalabert, Céline Vergnaud, Frédéric Bonell, Alain Marty, Matthieu Jamet

Abstract: Two-dimensional and van der Waals ferromagnets are ideal platform to study low dimensional magnetism and proximity effects in van der Waals heterostructures. Their ultimate two dimensional character offers also the opportunity to easily adjust their magnetic properties using strain or electric fields. Among 2D ferromagnets, the Cr$_{1+x}$Te$_2$ compounds with $x$=0-1 are very promising because the… ▽ More Two-dimensional and van der Waals ferromagnets are ideal platform to study low dimensional magnetism and proximity effects in van der Waals heterostructures. Their ultimate two dimensional character offers also the opportunity to easily adjust their magnetic properties using strain or electric fields. Among 2D ferromagnets, the Cr$_{1+x}$Te$_2$ compounds with $x$=0-1 are very promising because their magnetic properties depend on the amount of self-intercalated Cr atoms between pure CrTe$_2$ layers and the Curie temperature (T$_C$) can reach room temperature for certain compositions. Here, we investigate the evolution of the composition, structural and magnetic properties of thin Cr$_{1.33}$Te$_2$ (Cr$_2$Te$_3$) films epitaxially grown on graphene upon annealing. We observe a transition above 450°C from the Cr$_{1.33}$Te$_2$ phase with perpendicular magnetic anisotropy and a T$_C$ of 180 K to a composition close to Cr$_{1.39}$Te$_2$ with in-plane magnetic anisotropy and a T$_C$ of 240-250 K. This phase remains stable up to 650°C above which a pure Cr film starts to form. This work demonstrates the complex interplay between intercalated Cr, lattice parameters and magnetic properties in Cr$_{1+x}$Te$_2$ compounds. △ Less

Submitted 9 May, 2024; originally announced May 2024.

Comments: 5 pages, 5 figures

High Strain Engineering of a Suspended WSSe Monolayer Membrane by Indentation and Measured by Tip-enhanced Photoluminescence

Authors: Anis Chiout, Agnès Tempez, Thomas Carlier, Marc Chaigneau, Fabian Cadiz, Alistair Rowe, Biyuan Zheng, Anlian Pan, Marco Pala, Fabrice Oehler, Abdelkarim Ouerghi, Julien Chaste

Abstract: Straintronics involves the manipulation and regulation of the electronic characteristics of 2D materials through the use of macro- and nano-scale strain engineering. In this study, we utilized an atomic force microscope (AFM) coupled with an optical system to perform indentation measurements and tip-enhanced photoluminescence (TEPL), allowing us to extract the local optical response of a suspended… ▽ More Straintronics involves the manipulation and regulation of the electronic characteristics of 2D materials through the use of macro- and nano-scale strain engineering. In this study, we utilized an atomic force microscope (AFM) coupled with an optical system to perform indentation measurements and tip-enhanced photoluminescence (TEPL), allowing us to extract the local optical response of a suspended monolayer membrane of ternary WSSe at various levels of deformation, up to strains of 10%. The photoluminescence signal is modelled considering the deformation, stress distribution and strain dependence of the WSSe band structure. We observe an additional TEPL signal that exhibits significant variation under strain, with 64 meV per percent of elongation. This peak is linked to the highly strained 2D material lying right underneath the tip. We discuss the amplification of the signal and its relation to the excitonic funnelling effect in a more comprehensive model. We will also compare the diffusion caused by Auger recombination against the radiative excitonic decay. We use TEPL to examine and comprehend the local physics of 2D semi-conducting materials subjected to extreme mechanical strain. Chemical vapour deposition-fabricated 2D ternaries possess high strain resistance, comparable to the benchmark MoS2, and a high Young's modulus of 273 GPa. △ Less

Submitted 5 February, 2024; originally announced February 2024.

Reconfigurable Multifunctional van der Waals Ferroelectric Devices and Logic Circuits

Authors: Ankita Ram, Krishna Maity, Cédric Marchand, Aymen Mahmoudi, Aseem Rajan Kshirsagar, Mohamed Soliman, Takashi Taniguchi, Kenji Watanabe, Bernard Doudin, Abdelkarim Ouerghi, Sven Reichardt, Ian O'Connor, Jean-Francois Dayen

Abstract: In this work, we demonstrate the suitability of Reconfigurable Ferroelectric Field-Effect- Transistors (Re-FeFET) for designing non-volatile reconfigurable logic-in-memory circuits with multifunctional capabilities. Modulation of the energy landscape within a homojunction of a 2D tungsten diselenide (WSe$_2$) layer is achieved by independently controlling two split-gate electrodes made of a ferroe… ▽ More In this work, we demonstrate the suitability of Reconfigurable Ferroelectric Field-Effect- Transistors (Re-FeFET) for designing non-volatile reconfigurable logic-in-memory circuits with multifunctional capabilities. Modulation of the energy landscape within a homojunction of a 2D tungsten diselenide (WSe$_2$) layer is achieved by independently controlling two split-gate electrodes made of a ferroelectric 2D copper indium thiophosphate (CuInP$_2$S$_6$) layer. Controlling the state encoded in the Program Gate enables switching between p, n and ambipolar FeFET operating modes. The transistors exhibit on-off ratios exceeding 10$^6$ and hysteresis windows of up to 10 V width. The homojunction can change from ohmic-like to diode behavior, with a large rectification ratio of 10$^4$. When programmed in the diode mode, the large built-in p-n junction electric field enables efficient separation of photogenerated carriers, making the device attractive for energy harvesting applications. The implementation of the Re-FeFET for reconfigurable logic functions shows how a circuit can be reconfigured to emulate either polymorphic ferroelectric NAND/AND logic-in-memory or electronic XNOR logic with long retention time exceeding 10$^4$ seconds. We also illustrate how a circuit design made of just two Re-FeFETs exhibits high logic expressivity with reconfigurability at runtime to implement several key non-volatile 2-input logic functions. Moreover, the Re-FeFET circuit demonstrates remarkable compactness, with an up to 80% reduction in transistor count compared to standard CMOS design. The 2D van de Waals Re-FeFET devices therefore exhibit groundbreaking potential for both More-than-Moore and beyond-Moore future of electronics, in particular for an energy-efficient implementation of in-memory computing and machine learning hardware, due to their multifunctionality and design compactness. △ Less

Submitted 23 October, 2023; originally announced October 2023.

Comments: 23 pages, 5 figures; Supporting Information: 12 pages, 6 figures

Quasi van der Waals Epitaxy of Rhombohedral-stacked Bilayer WSe2 on GaP(111) Heterostructure

Authors: Aymen Mahmoudi, Meryem Bouaziz, Niels Chapuis, Geoffroy Kremer, Julien Chaste, Davide Romanin, Marco Pala, François Bertran, Patrick Le Fèvre, Iann C. Gerber, Gilles Patriarche, Fabrice Oehler, Xavier Wallart, Abdelkarim Ouerghi

Abstract: The growth of bilayers of two-dimensional (2D) materials on conventional 3D semiconductors results in 2D/3D hybrid heterostructures, which can provide additional advantages over more established 3D semiconductors while retaining some specificities of 2D materials. Understanding and exploiting these phenomena hinge on knowing the electronic properties and the hybridization of these structures. Here… ▽ More The growth of bilayers of two-dimensional (2D) materials on conventional 3D semiconductors results in 2D/3D hybrid heterostructures, which can provide additional advantages over more established 3D semiconductors while retaining some specificities of 2D materials. Understanding and exploiting these phenomena hinge on knowing the electronic properties and the hybridization of these structures. Here, we demonstrate that rhombohedral-stacked bilayer (AB stacking) can be obtained by molecular beam epitaxy growth of tungsten diselenide (WSe2) on gallium phosphide (GaP) substrate. We confirm the presence of 3R-stacking of the WSe2 bilayer structure using scanning transmission electron microscopy (STEM) and micro-Raman spectroscopy. Also, we report high-resolution angle-resolved photoemission spectroscopy (ARPES) on our rhombohedral-stacked WSe2 bilayer grown on GaP(111)B substrate. Our ARPES measurements confirm the expected valence band structure of WSe2 with the band maximum located at the gamma point of the Brillouin zone. The epitaxial growth of WSe2 on GaP(111)B heterostructures paves the way for further studies of the fundamental properties of these complex materials, as well as prospects for their implementation in devices to exploit their promising electronic and optical properties. △ Less

Submitted 9 October, 2023; originally announced October 2023.

Comments: 5 figures

Intrinsic defects and mid-gap states in quasi-one-dimensional Indium Telluride

Authors: Meryem Bouaziz, Aymen Mahmoudi, Geoffroy Kremer, Julien Chaste, Cesar Gonzalez, Yannick J. Dappe, Francois Bertran, Patrick Le Fevre, Marco Pala, Fabrice Oehler, Jean-Christophe Girard, Abdelkarim Ouerghi

Abstract: Recently, intriguing physical properties have been unraveled in anisotropic semiconductors, in which the in-plane electronic band structure anisotropy often originates from the low crystallographic symmetry. The atomic chain is the ultimate limit in material downscaling for electronics, a frontier for establishing an entirely new field of one-dimensional quantum materials. Electronic and structura… ▽ More Recently, intriguing physical properties have been unraveled in anisotropic semiconductors, in which the in-plane electronic band structure anisotropy often originates from the low crystallographic symmetry. The atomic chain is the ultimate limit in material downscaling for electronics, a frontier for establishing an entirely new field of one-dimensional quantum materials. Electronic and structural properties of chain-like InTe are essential for better understanding of device applications such as thermoelectrics. Here, we use scanning tunneling microscopy/spectroscopy (STM/STS) measurements and density functional theory (DFT) calculations to directly image the in-plane structural anisotropy in tetragonal Indium Telluride (InTe). As results, we report the direct observation of one-dimensional In1+ chains in InTe. We demonstrate that InTe exhibits a band gap of about 0.40 +-0.02 eV located at the M point of the Brillouin zone. Additionally, line defects are observed in our sample, were attributed to In1+ chain vacancy along the c-axis, a general feature in many other TlSe-like compounds. Our STS and DFT results prove that the presence of In1+ induces localized gap state, located near the valence band maximum (VBM). This acceptor state is responsible for the high intrinsic p-type do** of InTe that we also confirm using angle-resolved photoemission spectroscopy. △ Less

Submitted 17 August, 2023; originally announced August 2023.

Comments: no

Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-In$_{2}$Se$_{3}$

Authors: Geoffroy Kremer, Aymen Mahmoudi, Adel M'Foukh, Meryem Bouaziz, Mehrdad Rahimi, Maria Luisa Della Rocca, Patrick Le Fèvre, Jean-Francois Dayen, François Bertran, Sylvia Matzen, Marco Pala, Julien Chaste, Fabrice Oehler, Abdelkarim Ouerghi

Abstract: Two-dimensional (2D) ferroelectric (FE) materials are promising compounds for next-generation nonvolatile memories, due to their low energy consumption and high endurance. Among them, α-In$_{2}$Se$_{3}$ has drawn particular attention due to its in- and out-of-plane ferroelectricity, whose robustness has been demonstrated down to the monolayer limit. This is a relatively uncommon behavior since mos… ▽ More Two-dimensional (2D) ferroelectric (FE) materials are promising compounds for next-generation nonvolatile memories, due to their low energy consumption and high endurance. Among them, α-In$_{2}$Se$_{3}$ has drawn particular attention due to its in- and out-of-plane ferroelectricity, whose robustness has been demonstrated down to the monolayer limit. This is a relatively uncommon behavior since most bulk FE materials lose their ferroelectric character at the 2D limit due to depolarization field. Using angle resolved photoemission spectroscopy (ARPES), we unveil another unusual 2D phenomena appearing in 2H α-In$_{2}$Se$_{3}$ single crystals, the occurrence of a highly metallic two-dimensional electron gas (2DEG) at the surface of vacuum-cleaved crystals. This 2DEG exhibits two confined states which correspond to an electron density of approximatively 10$^{13}$ electrons/cm$^{3}$, also confirmed by thermoelectric measurements. Combination of ARPES and density functional theory (DFT) calculations reveals a direct band gap of energy equal to 1.3 +/- 0.1 eV, with the bottom of the conduction band localized at the center of the Brillouin zone, just below the Fermi level. Such strong n-type do** further supports the quantum confinement of electrons and the formation of the 2DEG. △ Less

Submitted 9 August, 2023; originally announced August 2023.

Comments: 20 pages, 12 figures

Atomic-layer controlled THz Spintronic emission from Epitaxially grown Two dimensional PtSe$_2$/ferromagnet heterostructures

Authors: K. Abdukayumov, M. Mičica, F. Ibrahim, C. Vergnaud, A. Marty, J. -Y. Veuillen, P. Mallet, I. Gomes de Moraes, D. Dosenovic, A. Wright, J. Tignon, J. Mangeney, A. Ouerghi, V. Renard, F. Mesple, F. Bonell, H. Okuno, M. Chshiev, J. -M. George, H. Jaffrès, S. Dhillon, M. Jamet

Abstract: Terahertz (THz) Spintronic emitters based on ferromagnetic/metal junctions have become an important technology for the THz range, offering powerful and ultra-large spectral bandwidths. These developments have driven recent investigations of two-dimensional (2D) materials for new THz spintronic concepts. 2D materials, such as transition metal dichalcogenides (TMDs), are ideal platforms for SCC as t… ▽ More Terahertz (THz) Spintronic emitters based on ferromagnetic/metal junctions have become an important technology for the THz range, offering powerful and ultra-large spectral bandwidths. These developments have driven recent investigations of two-dimensional (2D) materials for new THz spintronic concepts. 2D materials, such as transition metal dichalcogenides (TMDs), are ideal platforms for SCC as they possess strong spin-orbit coupling (SOC) and reduced crystal symmetries. Moreover, SCC and the resulting THz emission can be tuned with the number of layers, electric field or strain. Here, epitaxially grown 1T-PtSe$_2$ and sputtered Ferromagnet (FM) heterostructures are presented as a novel THz emitter where the 1T crystal symmetry and strong SOC favor SCC. High quality of as-grown PtSe$_2$ layers is demonstrated and further FM deposition leaves the PtSe$_2$ unaffected, as evidenced with extensive characterization. Through this atomic growth control, the unique thickness dependent electronic structure of PtSe$_2$ allows the control of the THz emission by SCC. Indeed, we demonstrate the transition from the inverse Rashba-Edelstein effect in one monolayer to the inverse spin Hall effect in multilayers. This band structure flexibility makes PtSe$_2$ an ideal candidate as a THz spintronic 2D material and to explore the underlying mechanisms and engineering of the SCC for THz emission. △ Less

Submitted 11 May, 2023; originally announced May 2023.

Comments: 26 pages, 6 figures

Hydrogenic Spin-Valley states of the Bromine donor in 2H-MoTe$_2$

Authors: Valeria Sheina, Guillaume Lang, Vasily Stolyarov, Vyacheslav Marchenkov, Sergey Naumov, Alexandra Perevalova, Jean-Christophe Girard, Guillemin Rodary, Christophe David, Leonnel Romuald Sop, Debora Pierucci, Abdelkarim Ouerghi, Jean-Louis Cantin, Brigitte Leridon, Mahdi Ghorbani-Asl, Arkady V. Krasheninnikov, Hervé Aubin

Abstract: In semiconductors, the identification of do** atomic elements allowing to encode a qubit within spin states is of intense interest for quantum technologies. In transition metal dichalcogenides semiconductors, the strong spin-orbit coupling produces locked spin-valley states with expected long coherence time. Here we study the substitutional Bromine Br\textsubscript{Te} dopant in 2H-MoTe$_2$. Ele… ▽ More In semiconductors, the identification of do** atomic elements allowing to encode a qubit within spin states is of intense interest for quantum technologies. In transition metal dichalcogenides semiconductors, the strong spin-orbit coupling produces locked spin-valley states with expected long coherence time. Here we study the substitutional Bromine Br\textsubscript{Te} dopant in 2H-MoTe$_2$. Electron spin resonance measurements show that this dopant carries a spin with long-lived nanoseconds coherence time. Using scanning tunneling spectroscopy, we find that the hydrogenic wavefunctions associated with the dopant levels have characteristics spatial modulations that result from their hybridization to the \textbf{Q}-valleys of the conduction band. From a Fourier analysis of the conductance maps, we find that the amplitude and phase of the Fourier components change with energy according to the different irreducible representations of the impurity-site point-group symmetry. These results demonstrate that a dopant can inherit the locked spin-valley properties of the semiconductor and so exhibit long spin-coherence time. △ Less

Submitted 1 May, 2023; originally announced May 2023.

Comments: Main text : 20 pages, 5 figures. Supplementary : 21 pages, 16 figures

Epitaxial van der Waals heterostructures of Cr2Te3 on 2D materials

Authors: Quentin Guillet, Libor Vojacek, Djordje Dosenovic, Fatima Ibrahim, Herve Boukari, **g Li, Fadi Choueikani, Philippe Ohresser, Abdelkarim Ouerghi, Florie Mesple, Vincent Renard, Jean-Francois Jacquot, Denis Jalabert, Hanako Okuno, Mairbek Chshiev, Celine Vergnaud, Frederic Bonell, Alain Marty, Matthieu Jamet

Abstract: Achieving large-scale growth of two-dimensional (2D) ferromagnetic materials with high Curie temperature (TC) and perpendicular magnetic anisotropy (PMA) is highly desirable for the development of ultra-compact magnetic sensors and magnetic memories. In this context, van der Waals (vdW) Cr2Te3 appears as a promising candidate. Bulk Cr2Te3 exhibits strong PMA and a TC of 180 K. Moreover, both PMA a… ▽ More Achieving large-scale growth of two-dimensional (2D) ferromagnetic materials with high Curie temperature (TC) and perpendicular magnetic anisotropy (PMA) is highly desirable for the development of ultra-compact magnetic sensors and magnetic memories. In this context, van der Waals (vdW) Cr2Te3 appears as a promising candidate. Bulk Cr2Te3 exhibits strong PMA and a TC of 180 K. Moreover, both PMA and TC might be adjusted in ultrathin films by engineering composition, strain, or applying an electric field. In this work, we demonstrate the molecular beam epitaxy (MBE) growth of vdW heterostructures of five-monolayer quasi-freestanding Cr2Te3 on three classes of 2D materials: graphene (semimetal), WSe2 (semiconductor) and Bi2Te3 (topological insulator). By combining structural and chemical analysis down to the atomic level with ab initio calculations, we confirm the single crystalline character of Cr2Te3 films on the 2D materials with sharp vdW interfaces. They all exhibit PMA and TC close to the bulk Cr2Te3 value of 180 K. Ab initio calculations confirm this PMA and show how its strength depends on strain. Finally, Hall measurements reveal a strong anomalous Hall effect, which changes sign at a given temperature. We theoretically explain this effect by a sign change of the Berry phase close to the Fermi level. This transition temperature depends on the 2D material in proximity, notably as a consequence of charge transfer. MBE-grown Cr2Te3/2D material bilayers constitute model systems for the further development of spintronic devices combining PMA, large spin-orbit coupling and sharp vdW interface. △ Less

Submitted 6 March, 2023; originally announced March 2023.

Comments: 18 pages, 13 figures and Supplemental Material

Unidirectional Rashba Spin Splitting in Single Layer WS$_{2(1-x)}$Se$_{2x}$ alloy

Authors: Jihene Zribi, Debora Pierucci, Federico Bisti, Biyuan Zheng, Josse Avila, Lama Khalil, Cyrine Ernandes, Julien Chaste, Fabrice Oehler, Marco Pala, Thomas Maroutian, Ilka Hermes, Emmanuel Lhuillier, Anlian Pan, Abdelkarim Ouerghi

Abstract: Atomically thin two-dimensional (2D) layered semiconductors such as transition metal dichalcogenides (TMDs) have attracted considerable attention due to their tunable band gap, intriguing spin-valley physics, piezoelectric effects and potential device applications. Here we study the electronic properties of a single layer WS$_{1.4}$Se$_{0.6}$ alloys. The electronic structure of this alloy, explore… ▽ More Atomically thin two-dimensional (2D) layered semiconductors such as transition metal dichalcogenides (TMDs) have attracted considerable attention due to their tunable band gap, intriguing spin-valley physics, piezoelectric effects and potential device applications. Here we study the electronic properties of a single layer WS$_{1.4}$Se$_{0.6}$ alloys. The electronic structure of this alloy, explored using angle resolved photoemission spectroscopy, shows a clear valence band structure anisotropy characterized by two paraboloids shifted in one direction of the k-space by a constant in-plane vector. This band splitting is a signature of a unidirectional Rashba spin splitting with a related giant Rashba parameter of 2.8 0.7 eV . The combination of angle resolved photoemission spectroscopy with piezo force microscopy highlights the link between this giant unidirectional Rashba spin splitting and an in-plane polarization present in the alloy. These peculiar anisotropic properties of the WS$_{1.4}$Se$_{0.6}$ alloy can be related to local atomic orders induced during the growth process due the different size and electronegativity between S and Se atoms. This distorted crystal structure combined to the observed macroscopic tensile strain, as evidenced by photoluminescence, displays electric dipoles with a strong in-plane component, as shown by piezoelectric microscopy. The interplay between semiconducting properties, in-plane spontaneous polarization and giant out-of-plane Rashba spin-splitting in this two-dimensional material has potential for a wide range of applications in next-generation electronics, piezotronics and spintronics devices. △ Less

Submitted 6 December, 2022; originally announced December 2022.

Comments: Nanotechnology (2022)

Visualizing giant ferroelectric gating effects in large-scale WSe$_2$/BiFeO$_3$ heterostructures

Authors: Raphaël Salazar, Sara Varotto, Céline Vergnaud, Vincent Garcia, Stéphane Fusil, Julien Chaste, Thomas Maroutian, Alain Marty, Frédéric Bonell, Debora Pierucci, Abdelkarim Ouerghi, François Bertran, Patrick Le Fèvre, Matthieu Jamet, Manuel Bibes, Julien Rault

Abstract: Multilayers based on quantum materials (complex oxides, topological insulators, transition-metal dichalcogenides, etc) have enabled the design of devices that could revolutionize microelectronics and optoelectronics. However, heterostructures incorporating quantum materials from different families remain scarce, while they would immensely broaden the range of possible applications. Here we demonst… ▽ More Multilayers based on quantum materials (complex oxides, topological insulators, transition-metal dichalcogenides, etc) have enabled the design of devices that could revolutionize microelectronics and optoelectronics. However, heterostructures incorporating quantum materials from different families remain scarce, while they would immensely broaden the range of possible applications. Here we demonstrate the large-scale integration of compounds from two highly-multifunctional families: perovskite oxides and transition-metal dichalcogenides (TMDs). We couple BiFeO$_3$, a room-temperature multiferroic oxide, and WSe$_2$, a semiconducting two-dimensional material with potential for photovoltaics and photonics. WSe$_2$ is grown by molecular beam epitaxy and transferred on a centimeter-scale onto BiFeO$_3$ films. Using angle-resolved photoemission spectroscopy, we visualize the electronic structure of 1 to 3 monolayers of WSe$_2$ and evidence a giant energy shift as large as 0.75 eV induced by the ferroelectric polarization direction in the underlying BiFeO$_3$. Such a strong shift opens new perspectives in the efficient manipulation of TMDs properties by proximity effects. △ Less

Submitted 26 October, 2022; originally announced October 2022.

Flat band and Lifschitz transition in long-range ordered supergraphene obtained by Erbium intercalation

Authors: A. Zaarour, V. Malesys, J. Teyssandier, M. Cranney, E. Denys, J. L. Bubendorff, A. Florentin, L. Josien, F. Vonau, D. Aubel, A. Ouerghi, C. Bena, L. Simon

Abstract: Dispersionless energy bands are a peculiar property gathering increasing attention for the emergence of novel photonic, magnetic and electronic properties. Here we report the first observation of a graphene superstructure n-doped up to the Lifshitz transition and exhibiting a flat band, obtained by ordered Erbium intercalation between a single layer graphene and SiC(0001). STM experiments reveal l… ▽ More Dispersionless energy bands are a peculiar property gathering increasing attention for the emergence of novel photonic, magnetic and electronic properties. Here we report the first observation of a graphene superstructure n-doped up to the Lifshitz transition and exhibiting a flat band, obtained by ordered Erbium intercalation between a single layer graphene and SiC(0001). STM experiments reveal large graphene areas characterized by a long-range ordered hexagonal superstructure with a lattice parameter of 1.40 nm, rotated by 19 degrees with respect to the original lattice. Angle Resolved Photoelectron Spectroscopy measurements show that this graphene structure exhibits Dirac cones with perfect linear dispersion, and a Dirac point at -1.72 eV +/- 0.02 under the Fermi level, which is one of the highest do** levels ever obtained solely by intercalation. Fermi surface measurements show that the Lifshitz transition has been reached, and that a wide flat band is generated around the M point. We propose that this modification of the band structure is the effect of an induced spin-orbit coupling. This system provides a playground to study the interaction between a novel magnetic order mediated by pi-band states, and a divergent density of states at the Fermi level. △ Less

Submitted 24 August, 2022; v1 submitted 25 July, 2022; originally announced July 2022.

Comments: 18 pages, 4 figures

Electroluminescence of monolayer WS$_2$ in a scanning tunneling microscope: the effect of bias polarity on the spectral and angular distribution of the emitted light

Authors: Ricardo Javier Peña Román}, Delphine Pommier, Rémi Bretel, Luis E. Parra López, Etienne Lorchat, Julien Chaste, Abdelkarim Ouerghi, Séverine Le Moal, Elizabeth Boer-Duchemin, Gérald Dujardin, Andrey G. Borisov, Luiz F. Zagonel, Guillaume Schull, Stéphane Berciaud, Eric Le Moal

Abstract: Inelastic electron tunneling in a scanning tunneling microscope (STM) is used to generate excitons in monolayer tungsten disulfide (WS$_2$). Excitonic electroluminescence is measured both at positive and negative sample bias. Using optical spectroscopy and Fourier-space optical microscopy, we show that the bias polarity of the tunnel junction determines the spectral and angular distribution of the… ▽ More Inelastic electron tunneling in a scanning tunneling microscope (STM) is used to generate excitons in monolayer tungsten disulfide (WS$_2$). Excitonic electroluminescence is measured both at positive and negative sample bias. Using optical spectroscopy and Fourier-space optical microscopy, we show that the bias polarity of the tunnel junction determines the spectral and angular distribution of the emitted light. At positive sample bias, only emission from excitonic species featuring an in-plane transition dipole moment is detected. Based on the spectral distribution of the emitted light, we infer that the dominant contribution is from charged excitons, i.e., trions. At negative sample bias, additional contributions from lower-energy excitonic species are evidenced in the emission spectra and the angular distribution of the emitted light reveals a mixed character of in-plane and out-of-plane transition dipole moments. △ Less

Submitted 25 May, 2022; originally announced May 2022.

Evidence for Highly p-type do** and type II band alignment in large scale monolayer WSe2 /Se-terminated GaAs heterojunction grown by Molecular beam epitaxy

Authors: Debora Pierucci, Aymen Mahmoudi, Mathieu Silly, Federico Bisti, Fabrice Oehler, Gilles Patriarche Frédéric Bonell, Alain Marty, Céline Vergnaud, Matthieu Jamet, Hervé Boukari, Emmanuel Lhuillier, Marco Pala, Abdelkarim Ouerghi

Abstract: Two-dimensional materials (2D) arranged in hybrid van der Waals (vdW) heterostructures provide a route toward the assembly of 2D and conventional III-V semiconductors. Here, we report the structural and electronic properties of single layer WSe2 grown by molecular beam epitaxy on Se-terminated GaAs(111)B. Reflection high-energy electron diffraction images exhibit sharp streaky features indicative… ▽ More Two-dimensional materials (2D) arranged in hybrid van der Waals (vdW) heterostructures provide a route toward the assembly of 2D and conventional III-V semiconductors. Here, we report the structural and electronic properties of single layer WSe2 grown by molecular beam epitaxy on Se-terminated GaAs(111)B. Reflection high-energy electron diffraction images exhibit sharp streaky features indicative of a high-quality WSe2 layer produced via vdW epitaxy. This is confirmed by in-plane x-ray diffraction. The single layer of WSe2 and the absence of interdiffusion at the interface are confirmed by high resolution X-ray photoemission spectroscopy and high-resolution transmission microscopy. Angle-resolved photoemission investigation revealed a well-defined WSe2 band dispersion and a high p-do** coming from the charge transfer between the WSe2 monolayer and the Se-terminated GaAs substrate. By comparing our results with local and hybrid functionals theoretical calculation, we find that the top of the valence band of the experimental heterostructure is close to the calculations for free standing single layer WSe2. Our experiments demonstrate that the proximity of the Se-terminated GaAs substrate can significantly tune the electronic properties of WSe2. The valence band maximum (VBM, located at the K point of the Brillouin zone) presents an upshifts of about 0.56 eV toward the Fermi level with respect to the VBM of WSe2 on graphene layer, which is indicative of high p-type do** and a key feature for applications in nanoelectronics and optoelectronics. △ Less

Submitted 24 January, 2022; originally announced January 2022.

Hybridization and localized flat band in the WSe2/MoSe2 heterobilayer grown by molecular beam epitaxy

Authors: Lama Khalil, Debora Pierucci, Emilio Velez, José Avila, Céline Vergnaud, Pavel Dudin, Fabrice Oehler, Julien Chaste, Matthieu Jamet, Emmanuel Lhuillier, Marco Pala, Abdelkarim Ouerghi

Abstract: Nearly localized moire flat bands in momentum space, arising at particular twist angles, are the key to achieve correlated effects in transition-metal dichalcogenides. Here, we use angle-resolved photoemission spectroscopy (ARPES) to visualize the presence of a flat band near the Fermi level of van der Waals (vdW) WSe2/MoSe2 heterobilayer grown by molecular beam epitaxy. This flat band is localize… ▽ More Nearly localized moire flat bands in momentum space, arising at particular twist angles, are the key to achieve correlated effects in transition-metal dichalcogenides. Here, we use angle-resolved photoemission spectroscopy (ARPES) to visualize the presence of a flat band near the Fermi level of van der Waals (vdW) WSe2/MoSe2 heterobilayer grown by molecular beam epitaxy. This flat band is localized near the K point of the Brillouin zone and has a width of several hundred meVs. By combining ARPES measurements with density functional theory (DFT) calculations, we confirm the coexistence of different domains, namely the reference 2H stacking without layer misorientation and regions with arbitrary twist angles. For the 2H-stacked heterobilayer, our ARPES results show strong interlayer hybridization effects, further confirmed by complementary micro- Raman spectroscopy measurements. The spin-splitting of the valence band at K is determined to be 470 meV. The valence band maximum (VBM) position of the heterobilayer is located at the Gamma point. The energy difference between the VBM at Gamma and the K point is of -60 meV, which is a stark difference compared to individual 1L WSe2 and 1L WSe2, showing both a VBM at K. △ Less

Submitted 10 January, 2022; originally announced January 2022.

High carrier mobility in single-crystal PtSe2 grown by molecular beam epitaxy on ZnO(0001)

Authors: Frédéric Bonell, Alain Marty, Céline Vergnaud, Vincent Consonni, Hanako Okuno, Abdelkarim Ouerghi, Hervé Boukari, Matthieu Jamet

Abstract: PtSe2 is attracting considerable attention as a high mobility two-dimensional material with envisionned applications in microelectronics, photodetection and spintronics. The growth of high quality PtSe2 on insulating substrates with wafer-scale uniformity is a prerequisite for electronic transport investigations and practical use in devices. Here, we report the growth of highly oriented few-layers… ▽ More PtSe2 is attracting considerable attention as a high mobility two-dimensional material with envisionned applications in microelectronics, photodetection and spintronics. The growth of high quality PtSe2 on insulating substrates with wafer-scale uniformity is a prerequisite for electronic transport investigations and practical use in devices. Here, we report the growth of highly oriented few-layers PtSe2 on ZnO(0001) by molecular beam epitaxy. The crystalline structure of the films is characterized with electron and X-ray diffraction, atomic force microscopy and transmission electron microscopy. The comparison with PtSe2 layers grown on graphene, sapphire, mica, SiO2 and Pt(111) shows that among insulating substrates, ZnO(0001) yields films of superior structural quality. Hall measurements performed on epitaxial ZnO/PtSe2 with 5 monolayers of PtSe2 show a clear semiconducting behaviour and a high mobility in excess of 200 cm2V 1s-1 at room temperature and up to 447 cm2V-1s-1 at low temperature. △ Less

Submitted 16 September, 2021; originally announced September 2021.

Journal ref: 2D Mater. 9, 015015 (2022)

Coexistence of ferromagnetism and spin-orbit coupling by incorporation of platinum in two-dimensional VSe$_2$

Authors: E. Vélez-Fort, A. Hallal, R. Sant, T. Guillet, K. Abdukayumov, A. Marty, C. Vergnaud, J. -F. Jacquot, D. Jalabert, J. Fujii, I. Vobornik, J. Rault, N. B. Brookes, D. Longo, P. Ohresser, A. Ouerghi, J. -Y. Veuillen, P. Mallet, H. Boukari, H. Okuno, M. Chshiev, F. Bonell, M. Jamet

Abstract: We report on a novel material, namely two-dimensional (2D) V$_{1-x}$Pt$_x$Se$_2$ alloy, exhibiting simultaneously ferromagnetic order and Rashba spin-orbit coupling. While ferromagnetism is absent in 1T-VSe$_2$ due to the competition with the charge density wave phase, we demonstrate theoretically and experimentally that the substitution of vanadium by platinum in VSe$_2$ (10-50 %) to form an homo… ▽ More We report on a novel material, namely two-dimensional (2D) V$_{1-x}$Pt$_x$Se$_2$ alloy, exhibiting simultaneously ferromagnetic order and Rashba spin-orbit coupling. While ferromagnetism is absent in 1T-VSe$_2$ due to the competition with the charge density wave phase, we demonstrate theoretically and experimentally that the substitution of vanadium by platinum in VSe$_2$ (10-50 %) to form an homogeneous 2D alloy restores ferromagnetic order with Curie temperatures of 6 K for 5 monolayers and 25 K for one monolayer of V$_{0.65}$Pt$_{0.35}$Se$_2$. Moreover, the presence of platinum atoms gives rise to Rashba spin-orbit coupling in (V,Pt)Se$_2$ providing an original platform to study the interplay between ferromagnetism and spin-orbit coupling in the 2D limit. △ Less

Submitted 20 May, 2021; originally announced May 2021.

Comments: 5 pages, 5 figures

Dynamical Coulomb blockade under a temperature bias

Authors: H. Duprez, F. Pierre, E. Sivre, A. Aassime, F. D. Parmentier, A. Cavanna, A. Ouerghi, U. Gennser, I. Safi, C. Mora, A. Anthore

Abstract: We observe and comprehend the dynamical Coulomb blockade suppression of the electrical conductance across an electronic quantum channel submitted to a temperature difference. A broadly tunable, spin-polarized Ga(Al)As quantum channel is connected on-chip, through a micron-scale metallic node, to a linear $RC$ circuit. The latter is made up of the node's geometrical capacitance $C$ in parallel with… ▽ More We observe and comprehend the dynamical Coulomb blockade suppression of the electrical conductance across an electronic quantum channel submitted to a temperature difference. A broadly tunable, spin-polarized Ga(Al)As quantum channel is connected on-chip, through a micron-scale metallic node, to a linear $RC$ circuit. The latter is made up of the node's geometrical capacitance $C$ in parallel with an adjustable resistance $R\in \{1/2,1/3,1/4\}\times h/e^2$ formed by 2--4 quantum Hall channels. The system is characterized by three temperatures: a temperature of the electrons in the large electrodes ($T$) and in the node ($T_\mathrm{node}$), and a temperature of the electromagnetic modes of the $RC$ circuit ($T_\mathrm{env}$). The temperature in the node is selectively increased by local Joule dissipation, and characterized from current fluctuations. For a quantum channel in the tunnel regime, a close match is found between conductance measurements and tunnel dynamical Coulomb blockade theory. In the opposite near ballistic regime, we develop a theory that accounts for different electronic and electromagnetic bath temperatures, again in very good agreement with experimental data. Beyond these regimes, for an arbitrary quantum channel set in the far out-of-equilibrium situation where the temperature in the node significantly exceeds the one in the large electrodes, the equilibrium (uniform temperature) prediction for the conductance is recovered, albeit at a rescaled temperature $αT_\mathrm{node}$. △ Less

Submitted 8 April, 2021; originally announced April 2021.

Comments: Submitted

Journal ref: Phys. Rev. Research 3, 023122 (2021)

Indirect to direct band gap crossover in two-dimensional WS2(1-x)Se2x alloys

Authors: Cyrine Ernandes, Lama Khalil, Hela Almabrouk, Debora Pierucci, Biyuan Zheng, José Avila, Pave Dudin, Julien Chaste, Fabrice Oehler, Marco Pala, Federico Bisti, Thibault Brulé, Emmanuel Lhuillier, Anlian Pan, Abdelkarim Ouerghi

Abstract: In atomically thin transition metal dichalcogenide semiconductors, there is a crossover from indirect to direct bandgap as the thickness drops to one monolayer, which comes with a fast increase of the photoluminescence signal. Here, we show that for different alloy compositions of WS2(1-x)Se2x this trend may be significantly affected by the alloy content and we demonstrate that the sample with the… ▽ More In atomically thin transition metal dichalcogenide semiconductors, there is a crossover from indirect to direct bandgap as the thickness drops to one monolayer, which comes with a fast increase of the photoluminescence signal. Here, we show that for different alloy compositions of WS2(1-x)Se2x this trend may be significantly affected by the alloy content and we demonstrate that the sample with the highest Se ratio presents a strongly reduced effect. The highest micro-PL intensity is found for bilayer WS2(1-x)Se2x (x = 0.8) with a decrease of its maximum value by only a factor of 2 when passing from mono- to bi-layer. To better understand this factor and explore the layer-dependent band structure evolution of WS2(1-x)Se2x, we performed a nano-angle resolved photoemission spectroscopy study coupled with first-principles calculations. We find that the high micro-PL value for bilayer WS2(1-x)Se2x (x = 0.8) is due to the overlay of direct and indirect optical transitions. This peculiar high PL intensity in WS2(1-x)Se2x opens the way for spectrally tunable light-emitting devices. △ Less

Submitted 25 November, 2020; originally announced November 2020.

Phase Transition in a Memristive Suspended MoS2 Monolayer Probed by Opto- and Electro-Mechanics

Authors: Julien Chaste, Imen Hnid, Lama Khalil, Chen Si, Alan Durnez, Xavier Lafosse, Meng-Qiang Zhao, A. T. Charlie Johnson, Shengbai Zhang, Junhyeok Bang, Abdelkarim Ouerghi

Abstract: Semiconducting monolayer of 2D material are able to concatenate multiple interesting properties into a single component. Here, by combining opto-mechanical and electronic measurements, we demonstrate the presence of a partial 2H-1T phase transition in a suspended 2D monolayer membrane of MoS2. Electronic transport shows unexpected memristive properties in the MoS2 membrane, in the absence of any e… ▽ More Semiconducting monolayer of 2D material are able to concatenate multiple interesting properties into a single component. Here, by combining opto-mechanical and electronic measurements, we demonstrate the presence of a partial 2H-1T phase transition in a suspended 2D monolayer membrane of MoS2. Electronic transport shows unexpected memristive properties in the MoS2 membrane, in the absence of any external dopants. A strong mechanical softening of the membrane is measured concurrently and may only be related to the phase 2H-1T phase transition which imposes a 3percent directional elongation of the topological 1T phase with respect to the semiconducting 2H. We note that only a few percent 2H- 1T phase switching is sufficient to observe measurable memristive effects. Our experimental results combined with First-principles total energy calculations indicate that sulfur vacancy diffusion plays a key role in the initial nucleation of the phase transition. Our study clearly shows that nanomechanics represents an ultrasensitive technique to probe the crystal phase transition in 2D materials or thin membranes. Finally, a better control of the microscopic mechanisms responsible for the observed memristive effect in MoS2 is important for the implementation of future devices. △ Less

Submitted 23 November, 2020; originally announced November 2020.

Comments: ACS nano (2020)

Electronic heat flow and thermal shot noise in quantum circuits

Authors: E. Sivre, H. Duprez, A. Anthore, A. Aassime, F. D. Parmentier, A. Cavanna, A. Ouerghi, U. Gennser, F. Pierre

Abstract: When assembling individual quantum components into a mesoscopic circuit, the interplay between Coulomb interaction and charge granularity breaks down the classical laws of electrical impedance composition. Here we explore experimentally the thermal consequences, and observe an additional quantum mechanism of electronic heat transport. The investigated, broadly tunable test-bed circuit is composed… ▽ More When assembling individual quantum components into a mesoscopic circuit, the interplay between Coulomb interaction and charge granularity breaks down the classical laws of electrical impedance composition. Here we explore experimentally the thermal consequences, and observe an additional quantum mechanism of electronic heat transport. The investigated, broadly tunable test-bed circuit is composed of a micron-scale metallic node connected to one electronic channel and a resistance. Heating up the node with Joule dissipation, we separately determine, from complementary noise measurements, both its temperature and the thermal shot noise induced by the temperature difference across the channel (`delta-$T$ noise'). The thermal shot noise predictions are thereby directly validated, and the electronic heat flow is revealed. The latter exhibits a contribution from the channel involving the electrons' partitioning together with the Coulomb interaction. Expanding heat current predictions to include the thermal shot noise, we find a quantitative agreement with experiments. △ Less

Submitted 27 January, 2020; originally announced January 2020.

Comments: Minor differences with published article: additional reference [29], more explicit identification 'thermal shot noise' - 'delta-T noise', includes the supplementary figures

Journal ref: Nat. Commun. 10, 5638 (2019)

Magneto-spectroscopy of exciton Rydberg states in a CVD grown WSe2 monolayer

Authors: A. Delhomme, G. Butseraen, B. Zheng, L. Marty, V. Bouchiat, M. R. Molas, A. Pan, K. Watanabe, T. Taniguchi, A. Ouerghi, J. Renard, C. Faugeras

Abstract: The results of magneto-optical spectroscopy investigations of excitons in a CVD grown monolayer of WSe2 encapsulated in hexagonal boron nitride are presented. The emission linewidth for the 1s state is of 4:7 meV, close to the narrowest emissions observed in monolayers exfoliated from bulk material. The 2s excitonic state is also observed at higher energies in the photoluminescence spectrum. Magne… ▽ More The results of magneto-optical spectroscopy investigations of excitons in a CVD grown monolayer of WSe2 encapsulated in hexagonal boron nitride are presented. The emission linewidth for the 1s state is of 4:7 meV, close to the narrowest emissions observed in monolayers exfoliated from bulk material. The 2s excitonic state is also observed at higher energies in the photoluminescence spectrum. Magneto-optical spectroscopy allows for the determination of the g-factors and of the spatial extent of the excitonic wave functions associated with these emissions. Our work establishes CVD grown monolayers of transition metal dichalcogenides as a mature technology for optoelectronic applications. △ Less

Submitted 7 June, 2019; originally announced June 2019.

Comments: are always welcome

Macroscopic electron quantum coherence in a solid-state circuit

Authors: H. Duprez, E. Sivre, A. Anthore, A. Aassime, A. Cavanna, A. Ouerghi, U. Gennser, F. Pierre

Abstract: The quantum coherence of electronic quasiparticles underpins many of the emerging transport properties of conductors at small scales. Novel electronic implementations of quantum optics devices are now available with perspectives such as 'flying' qubit manipulations. However, electronic quantum interferences in conductors remained up to now limited to propagation paths shorter than $30\,μ$m, indepe… ▽ More The quantum coherence of electronic quasiparticles underpins many of the emerging transport properties of conductors at small scales. Novel electronic implementations of quantum optics devices are now available with perspectives such as 'flying' qubit manipulations. However, electronic quantum interferences in conductors remained up to now limited to propagation paths shorter than $30\,μ$m, independently of the material. Here we demonstrate strong electronic quantum interferences after a propagation along two $0.1\,$mm long pathways in a circuit. Interferences of visibility as high as $80\%$ and $40\%$ are observed on electronic analogues of the Mach-Zehnder interferometer of, respectively, $24\,μ$m and $0.1\,$mm arm length, consistently corresponding to a $0.25\,$mm electronic phase coherence length. While such devices perform best in the integer quantum Hall regime at filling factor 2, the electronic interferences are restricted by the Coulomb interaction between copropagating edge channels. We overcome this limitation by closing the inner channel in micron-scale loops of frozen internal degrees of freedom, combined with a loop-closing strategy providing an essential isolation from the environment. △ Less

Submitted 9 April, 2019; originally announced April 2019.

Comments: To be published in PRX

Journal ref: Phys. Rev. X 9, 021030 (2019)

Nanomechanical strain concentration on a 2D nanobridge within a large suspended bilayer graphene for molecular mass detection

Authors: Julien Chaste, Amine Missaoui, Amina Saadani, Daniel Garcia-Sanchez, Debora Pierucci, Zeineb Ben Aziza, Abdelkarim Ouerghi

Abstract: The recent emergence of strain gradient engineering directly affects the nanomechanics, optoelectronics and thermal transport fields in 2D materials. More specifically, large suspended graphene under very high stress represents the quintessence for nanomechanical mass detection through unique molecular reactions. Different techniques have been used to induce strain in 2D materials, for instance by… ▽ More The recent emergence of strain gradient engineering directly affects the nanomechanics, optoelectronics and thermal transport fields in 2D materials. More specifically, large suspended graphene under very high stress represents the quintessence for nanomechanical mass detection through unique molecular reactions. Different techniques have been used to induce strain in 2D materials, for instance by applying tip indentation, pressure or substrate bending on a graphene membrane. Nevertheless, an efficient way to control the strain of a structure is to engineer the system geometry as shown in everyday life in architecture and acoustics. Similarly, we studied the concentration of strain in artificial nanoconstrictions (~100 nm) in a suspended epitaxial bilayer graphene membrane with different geometries and lengths ranging from 10 to 40 micrometer. We carefully isolated the strain signature from micro-Raman measurements and extracted information on a scale below the laser spot size by analyzing the broadened shape of our Raman peaks, up to 100 cm-1. We potentially measured a strong strain concentration in a nanoconstriction up to 5percent, which is 20 times larger than the native epitaxial graphene strain. Moreover, with a bilayer graphene, our configuration naturally enhanced the native asymmetric strain between the upper and lower graphene layers. In contrast to previous results, we can achieve any kind of complex strain tensor in graphene thanks to our structural approach. This method completes the previous strain-induced techniques and opens up new perspectives for bilayer graphene and 2D heterostructures based devices. △ Less

Submitted 24 January, 2019; originally announced January 2019.

Journal ref: ACS Appl. Nano Mater., 2018, 1 (12), pp 6752

Evidence of Direct Electronic Band Gap in two-dimensional van der Waals Indium Selenide crystals

Authors: Hugo Henck, Debora Pierucci, Jihene Zribi, Federico Bisti, Evangelos Papalazarou, Jean Christophe Girard, Julien Chaste, Francois Bertran, Patrick Le Fevre, Fausto Sirotti, Luca Perfetti, Christine Giorgetti, Abhay Shukla, Julien E. Rault, Abdelkarim Ouerghi

Abstract: Metal mono-chalcogenide compounds offer a large variety of electronic properties depending on chemical composition, number of layers and stacking-order. Among them, the InSe has attracted much attention due to the promise of outstanding electronic properties, attractive quantum physics, and high photo-response. Metal mono-chalcogenide compounds offer a large variety of electronic properties depend… ▽ More Metal mono-chalcogenide compounds offer a large variety of electronic properties depending on chemical composition, number of layers and stacking-order. Among them, the InSe has attracted much attention due to the promise of outstanding electronic properties, attractive quantum physics, and high photo-response. Metal mono-chalcogenide compounds offer a large variety of electronic properties depending on chemical composition, number of layers and stacking-order. Among them, the InSe has attracted much attention due to the promise of outstanding electronic properties, attractive quantum physics, and high photo-response. Precise experimental determination of the electronic structure of InSe is sorely needed for better understanding of potential properties and device applications. Here, combining scanning tunneling spectroscopy (STS) and two-photon photoemission spectroscopy (2PPE), we demonstrate that InSe exhibits a direct band gap of about 1.25 eV located at the Gamma point of the Brillouin zone (BZ). STS measurements underline the presence of a finite and almost constant density of states (DOS) near the conduction band minimum (CBM) and a very sharp one near the maximum of the valence band (VMB). This particular DOS is generated by a poorly dispersive nature of the top valence band, as shown by angle resolved photoemission spectroscopy (ARPES) investigation. technologies. In fact, a hole effective mass of about m/m0 = -0.95 gammaK direction) was measured. Moreover, using ARPES measurements a spin-orbit splitting of the deeper-lying bands of about 0.35 eV was evidenced. These findings allow a deeper understanding of the InSe electronic properties underlying the potential of III-VI semiconductors for electronic and photonic △ Less

Submitted 24 January, 2019; originally announced January 2019.

Journal ref: Phys. Rev. Materials 3, 034004 (2019)

Spin-Orbit Interaction Induced in Graphene by Transition-Metal Dichalcogenides

Authors: T. Wakamura, F. Reale, P. Palczynski, M. Q. Zhao, A. T. C. Johnson, S. Guéron, C. Mattevi, A. Ouerghi, H. Bouchiat

Abstract: We report a systematic study on strong enhancement of spin-orbit interaction (SOI) in graphene driven by transition-metal dichalcogenides (TMDs). Low temperature magnetotoransport measurements of graphene proximitized to different TMDs (monolayer and bulk WSe$_2$, WS$_2$ and monolayer MoS$_2$) all exhibit weak antilocalization peaks, a signature of strong SOI induced in graphene. The amplitudes of… ▽ More We report a systematic study on strong enhancement of spin-orbit interaction (SOI) in graphene driven by transition-metal dichalcogenides (TMDs). Low temperature magnetotoransport measurements of graphene proximitized to different TMDs (monolayer and bulk WSe$_2$, WS$_2$ and monolayer MoS$_2$) all exhibit weak antilocalization peaks, a signature of strong SOI induced in graphene. The amplitudes of the induced SOI are different for different materials and thickness, and we find that monolayer WSe$_2$ and WS$_2$ can induce much stronger SOI than bulk ones and also monolayer MoS$_2$. The estimated spin-orbit (SO) scattering strength for the former reaches $\sim$ 10 meV whereas for the latter it is around 1 meV or less. We also discuss the symmetry and type of the induced SOI in detail, especially focusing on the identification of intrinsic and valley-Zeeman (VZ) SOI via the dominant spin relaxation mechanism. Our findings offer insight on the possible realization of the quantum spin Hall (QSH) state in graphene. △ Less

Submitted 19 February, 2019; v1 submitted 17 September, 2018; originally announced September 2018.

Comments: 14 pages, 10 figures and 3 tables

Journal ref: Phys. Rev. B 99, 245402 (2019)

Circuit Quantum Simulation of a Tomonaga-Luttinger Liquid with an Impurity

Authors: A. Anthore, Z. Iftikhar, E. Boulat, F. D. Parmentier, A. Cavanna, A. Ouerghi, U. Gennser, F. Pierre

Abstract: The Tomonaga-Luttinger liquid (TLL) concept is believed to generically describe the strongly-correlated physics of one-dimensional systems at low temperatures. A hallmark signature in 1D conductors is the quantum phase transition between metallic and insulating states induced by a single impurity. However, this transition impedes experimental explorations of real-world TLLs. Furthermore, its theor… ▽ More The Tomonaga-Luttinger liquid (TLL) concept is believed to generically describe the strongly-correlated physics of one-dimensional systems at low temperatures. A hallmark signature in 1D conductors is the quantum phase transition between metallic and insulating states induced by a single impurity. However, this transition impedes experimental explorations of real-world TLLs. Furthermore, its theoretical treatment, explaining the universal energy rescaling of the conductance at low temperatures, has so far been achieved exactly only for specific interaction strengths. Quantum simulation can provide a powerful workaround. Here, a hybrid metal-semiconductor dissipative quantum circuit is shown to implement the analogue of a TLL of adjustable electronic interactions comprising a single, fully tunable scattering impurity. Measurements reveal the renormalization group `beta-function' for the conductance that completely determines the TLL universal crossover to an insulating state upon cooling. Moreover, the characteristic scaling energy locating at a given temperature the position within this conductance renormalization flow is established over nine decades versus circuit parameters, and the out-of-equilibrium regime is explored. With the quantum simulator quality demonstrated from the precise parameter-free validation of existing and novel TLL predictions, quantum simulation is achieved in a strong sense, by elucidating interaction regimes which resist theoretical solutions. △ Less

Submitted 6 September, 2018; originally announced September 2018.

Comments: To be published in Phys. Rev. X

Journal ref: Phys. Rev. X 8, 031075 (2018)

Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: Electronic properties and band structure

Authors: Debora Pierucci, Jihene Zribi, Hugo Henck, Julien Chaste, Mathieu G. Silly, François Bertran, Patrick Le Fevre, Bernard Gil, Alex Summerfield, Peter H. Beton, Sergei V. Novikov, Guillaume Cassabois, Julien E. Rault, Abdelkarim Ouerghi

Abstract: We report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy (MBE). X-ray photoelectron spectroscopy (XPS) suggests an interface without any reaction or intermixing, while the angle resolved photoemission spectroscopy (ARPES) measurements show that the h-BN layers are epitaxially aligned with graphite. A well-defined band structure is revealed by ARPES measurement, reflec… ▽ More We report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy (MBE). X-ray photoelectron spectroscopy (XPS) suggests an interface without any reaction or intermixing, while the angle resolved photoemission spectroscopy (ARPES) measurements show that the h-BN layers are epitaxially aligned with graphite. A well-defined band structure is revealed by ARPES measurement, reflecting the high quality of the h-BN films. The measured valence band maximum (VBM) located at 2.8 eV below the Fermi level reveals the presence of undoped h-BN films (band gap ~ 6 eV). These results demonstrate that, although only weak van der Waals interactions are present between h-BN and graphite, a long range ordering of h-BN can be obtained even on polycrystalline graphite via van der Waals epitaxy, offering the prospect of large area, single layer h-BN. △ Less

Submitted 19 June, 2018; originally announced June 2018.

Comments: 9 pages, 4 figures SI 5 pages 2 figures

Journal ref: Applied Physics Letters 112, 253102 (2018)

Electronic band structure of Two-Dimensional WS2/Graphene van der Waals Heterostructures

Authors: Hugo Henck, Zeineb Ben Aziza, Debora Pierucci, Feriel Laourine, Francesco Reale, Pawel Palczynski, Julien Chaste, Mathieu G. Silly, François Bertran, Patrick Le Fevre, Emmanuel Lhuillier, Taro Wakamura, Cecilia Mattevi, Julien E. Rault, Matteo Calandra, Abdelkarim Ouerghi

Abstract: Combining single-layer two-dimensional semiconducting transition metal dichalcogenides (TMDs) with graphene layer in van der Waals heterostructures offers an intriguing means of controlling the electronic properties through these heterostructures. Here, we report the electronic and structural properties of transferred single layer WS2 on epitaxial graphene using micro-Raman spectroscopy, angle-res… ▽ More Combining single-layer two-dimensional semiconducting transition metal dichalcogenides (TMDs) with graphene layer in van der Waals heterostructures offers an intriguing means of controlling the electronic properties through these heterostructures. Here, we report the electronic and structural properties of transferred single layer WS2 on epitaxial graphene using micro-Raman spectroscopy, angle-resolved photoemission spectroscopy measurements (ARPES) and Density Functional Theory (DFT) calculations. The results show good electronic properties as well as well-defined band arising from the strong splitting of the single layer WS2 valence band at K points, with a maximum splitting of 0.44 eV. By comparing our DFT results with local and hybrid functionals, we find the top valence band of the experimental heterostructure is close to the calculations for suspended single layer WS2. . Our results provide an important reference for future studies of electronic properties of WS2 and its applications in valleytronic devices. △ Less

Submitted 13 June, 2018; originally announced June 2018.

Comments: 11 pages, 3 figures + SI 7 pages 8 figures

Journal ref: Physical Review B 97, 155421 (2018)

Interface Dipole and Band Bending in Hybrid p-n Heterojunction MoS2/GaN(0001)

Authors: Hugo Henck, Zeineb Ben Aziza, Olivia Zill, Debora Pierucci, Carl H. Naylor, Mathieu G. Silly, Noelle Gogneau, Fabrice Oehler, Stephane Collin, Julien Brault, Fausto Sirotti, François Bertran, Patrick Le Fèvre, Stéphane Berciaud, A. T Charlie Johnson, Emmanuel Lhuillier, Julien E. Rault, Abdelkarim Ouerghi

Abstract: Hybrid heterostructures based on bulk GaN and two-dimensional (2D) materials offer novel paths toward nanoelectronic devices with engineered features. Here, we study the electronic properties of a mixed-dimensional heterostructure composed of intrinsic n-doped MoS2 flakes transferred on p-doped GaN(0001) layers. Based on angle-resolved photoemission spectroscopy (ARPES) and high resolution X-ray p… ▽ More Hybrid heterostructures based on bulk GaN and two-dimensional (2D) materials offer novel paths toward nanoelectronic devices with engineered features. Here, we study the electronic properties of a mixed-dimensional heterostructure composed of intrinsic n-doped MoS2 flakes transferred on p-doped GaN(0001) layers. Based on angle-resolved photoemission spectroscopy (ARPES) and high resolution X-ray photoemission spectroscopy (HR-XPS), we investigate the electronic structure modification induced by the interlayer interactions in MoS2/GaN heterostructure. In particular, a shift of the valence band with respect to the Fermi level for MoS2/GaN heterostructure is observed; which is the signature of a charge transfer from the 2D monolayer MoS2 to GaN. ARPES and HR-XPS revealed an interface dipole associated with local charge transfer from the GaN layer to the MoS2 monolayer. Valence and conduction band offsets between MoS2 and GaN are determined to be 0.77 and -0.51 eV, respectively. Based on the measured work functions and band bendings, we establish the formation of an interface dipole between GaN and MoS2 of 0.2 eV. △ Less

Submitted 8 June, 2018; originally announced June 2018.

Comments: 13 pages, 5 figures + SI 2 pages, 2 figures

Journal ref: Physical Review B 96, 115312 (2017)

Tunable Do** in Hydrogenated Single Layered Molybdenum Disulfide

Authors: Debora Pierucci, Hugo Henck, Zeineb Ben Aziza, Carl H. Naylor, A. Balan, Julien E. Rault, M. G. Silly, Yannick J. Dappe, François Bertran, Patrick Le Fevre, F. Sirotti, A. T Charlie Johnson, Abdelkarim Ouerghi

Abstract: Structural defects in the molybdenum disulfide (MoS2) monolayer are widely known for strongly altering its properties. Therefore, a deep understanding of these structural defects and how they affect MoS2 electronic properties is of fundamental importance. Here, we report on the incorporation of atomic hydrogen in mono-layered MoS2 to tune its structural defects. We demonstrate that the electronic… ▽ More Structural defects in the molybdenum disulfide (MoS2) monolayer are widely known for strongly altering its properties. Therefore, a deep understanding of these structural defects and how they affect MoS2 electronic properties is of fundamental importance. Here, we report on the incorporation of atomic hydrogen in mono-layered MoS2 to tune its structural defects. We demonstrate that the electronic properties of single layer MoS2 can be tuned from the intrinsic electron (n) to hole (p) do** via controlled exposure to atomic hydrogen at room temperature. Moreover, this hydrogenation process represents a viable technique to completely saturate the sulfur vacancies present in the MoS2 flakes. The successful incorporation of hydrogen in MoS2 leads to the modification of the electronic properties as evidenced by high resolution X-ray photoemission spectroscopy and density functional theory calculations. Micro-Raman spectroscopy and angle resolved photoemission spectroscopy measurements show the high quality of the hydrogenated MoS2 confirming the efficiency of our hydrogenation process. These results demonstrate that the MoS2 hydrogenation could be a significant and efficient way to achieve tunable do** of transition metal dichalcogenides (TMD) materials with non-TMD elements. △ Less

Submitted 8 June, 2018; v1 submitted 7 June, 2018; originally announced June 2018.

Comments: 15 pages, 6 figures + SI 3 pages 3 figures. Pre-print published with the authorization of ACS Publications

Journal ref: ACS Nano 11, 1755 (2017)

Intrinsic properties of suspended MoS2 on SiO2/Si pillar arrays for nanomechanics and optics

Authors: Julien Chaste, Amine Missaoui, Si Huang, Hugo Henck, Zeineb Ben Aziza, Laurence Ferlazzo, Carl Naylor, Adrian Balan, Alan. T. Charlie Johnson Jr., Rémy Braive, Abdelkarim Ouerghi

Abstract: Semiconducting 2D materials, such as transition metal dichalcogenides (TMDs), are emerging in nanomechanics, optoelectronics, and thermal transport. In each of these fields, perfect control over 2D material properties including strain, do**, and heating is necessary, especially on the nanoscale. Here, we study clean devices consisting of membranes of single-layer MoS2 suspended on pillar arrays.… ▽ More Semiconducting 2D materials, such as transition metal dichalcogenides (TMDs), are emerging in nanomechanics, optoelectronics, and thermal transport. In each of these fields, perfect control over 2D material properties including strain, do**, and heating is necessary, especially on the nanoscale. Here, we study clean devices consisting of membranes of single-layer MoS2 suspended on pillar arrays. Using Raman and photoluminescence spectroscopy, we have been able to extract, separate and simulate the different contributions on the nanoscale and to correlate these to the pillar array design. This control has been used to design a periodic MoS2 mechanical membrane with a high reproducibility and to perform optomechanical measurements on arrays of similar resonators with a high-quality factor of 600 at ambient temperature, hence opening the way to multi-resonator applications with 2D materials. At the same time, this study constitutes a reference for the future development of well-controlled optical emissions within 2D materials on periodic arrays with reproducible behavior. We measured a strong reduction of the MoS2 band-gap induced by the strain generated from the pillars. A transition from direct to indirect band gap was observed in isolated tent structures made of MoS2 and pinched by a pillar. In fully suspended devices, simulations were performed allowing both the extraction of the thermal conductance and do** of the layer. Using the correlation between the influences of strain and do** on the MoS2 Raman spectrum, we have developed a simple, elegant method to extract the local strain in suspended and non-suspended parts of a membrane. This opens the way to experimenting with tunable coupling between light emission and vibration. △ Less

Submitted 6 June, 2018; originally announced June 2018.

Journal ref: Chaste, J., Missaoui, A., Huang, S., Henck, H., Ben Aziza, Z., Ferlazzo, L., ... & Ouerghi, A. (2018). Intrinsic Properties of Suspended MoS2 on SiO2/Si Pillar Arrays for Nanomechanics and Optics. ACS nano, 12(4), 3235-3242

Nanostructures in suspended mono- and bilayer epitaxial graphene

Authors: Julien Chaste, Amina Saadani, Alexandre Jaffre, Ali Madouri, José Alvarez, Debora Pierucci, Zeineb Ben Aziza, Abdelkarim Ouerghi

Abstract: Suspended graphene membrane presents a particular structure with fundamental interests and applications in nanomechanics, thermal transport and optoelectronics. Till now, the commonly used geometries are still quite simple and limited to the microscale. We propose here to overcome this problem by making nanostructures in suspended epitaxial bilayer graphene on a large scale and with a large variet… ▽ More Suspended graphene membrane presents a particular structure with fundamental interests and applications in nanomechanics, thermal transport and optoelectronics. Till now, the commonly used geometries are still quite simple and limited to the microscale. We propose here to overcome this problem by making nanostructures in suspended epitaxial bilayer graphene on a large scale and with a large variety of geometries. We also demonstrate a new hybrid thin film of SiC-graphene with an impressive robustness. Since the mechanics and thermal dissipation of a suspended graphene membrane are strongly related to its own geometry, we have in addition focused on thermal transport and strain engineering experiments. Micro-Raman spectroscopy map** was successfully performed for various geometries with intrinsic properties measurements at the nanoscale. Our engineering of graphene geometry has permitted to reduce the thermal transport, release and modulate the strain in our structures. △ Less

Submitted 5 June, 2018; originally announced June 2018.

Journal ref: Chaste, J., Saadani, A., Jaffre, A., Madouri, A., Alvarez, J., Pierucci, D., ... & Ouerghi, A. (2017). Nanostructures in suspended mono-and bilayer epitaxial graphene. Carbon, 125, 162-167

Thermoelectric Scanning Gate Interferometry on a Quantum Point Contact

Authors: B. Brun, F. Martins, S. Faniel, A. Cavanna, C. Ulysse, A. Ouerghi, U. Gennser, D. Mailly, P. Simon, S. Huant, M. Sanquer, H. Sellier, V. Bayot, B. Hackens

Abstract: We introduce a new scanning probe technique derived from scanning gate microscopy (SGM) in order to investigate thermoelectric transport in two-dimensional semiconductor devices. The thermoelectric scanning gate Microscopy (TSGM) consists in measuring the thermoelectric voltage induced by a temperature difference across a device, while scanning a polarized tip that locally changes the potential la… ▽ More We introduce a new scanning probe technique derived from scanning gate microscopy (SGM) in order to investigate thermoelectric transport in two-dimensional semiconductor devices. The thermoelectric scanning gate Microscopy (TSGM) consists in measuring the thermoelectric voltage induced by a temperature difference across a device, while scanning a polarized tip that locally changes the potential landscape. We apply this technique to perform interferometry of the thermoelectric transport in a quantum point contact (QPC). We observe an interference pattern both in SGM and TSGM images, and evidence large differences between the two signals in the low density regime of the QPC. In particular, a large phase jump appears in the interference fringes recorded by TSGM, which is not visible in SGM. We discuss this difference of sensitivity using a microscopic model of the experiment, based on the contribution from a resonant level inside or close to the QPC. This work demonstrates that combining scanning gate microscopy with thermoelectric measurements offers new information as compared to SGM, and provides a direct access to the derivative of the device transmission with respect to energy, both in amplitude and in phase. △ Less

Submitted 15 March, 2019; v1 submitted 30 March, 2018; originally announced April 2018.

Comments: Accepted for publication in Physical Review Applied

Journal ref: Phys. Rev. Applied 11, 034069 (2019)

Heat Coulomb Blockade of One Ballistic Channel

Authors: E. Sivre, A. Anthore, F. D. Parmentier, A. Cavanna, U. Gennser, A. Ouerghi, Y. **, F. Pierre

Abstract: Quantum mechanics and Coulomb interaction dictate the behavior of small circuits. The thermal implications cover fundamental topics from quantum control of heat to quantum thermodynamics, with prospects of novel thermal machines and an ineluctably growing influence on nanocircuit engineering. Experimentally, the rare observations thus far include the universal thermal conductance quantum and heat… ▽ More Quantum mechanics and Coulomb interaction dictate the behavior of small circuits. The thermal implications cover fundamental topics from quantum control of heat to quantum thermodynamics, with prospects of novel thermal machines and an ineluctably growing influence on nanocircuit engineering. Experimentally, the rare observations thus far include the universal thermal conductance quantum and heat interferometry. However, evidences for many-body thermal effects paving the way to markedly different heat and electrical behaviors in quantum circuits remain wanting. Here we report on the observation of the Coulomb blockade of electronic heat flow from a small metallic circuit node, beyond the widespread Wiedemann-Franz law paradigm. We demonstrate this thermal many-body phenomenon for perfect (ballistic) conduction channels to the node, where it amounts to the universal suppression of precisely one quantum of conductance for the transport of heat, but none for electricity. The inter-channel correlations that give rise to such selective heat current reduction emerge from local charge conservation, in the floating node over the full thermal frequency range ($\lesssim$temperature$\times k_\mathrm{B}/h$). This observation establishes the different nature of the quantum laws for thermal transport in nanocircuits. △ Less

Submitted 14 February, 2018; originally announced February 2018.

Comments: Letter: 5 pages including 3 figures; Methods: 3 pages and 4 figures

Journal ref: Nature Physics 14, 145 (2018)

Flat Electronic Bands in Long Sequences of Rhombohedral-stacked Multilayer Graphene

Authors: Hugo Henck, Jose Avila, Zeineb Ben Aziza, Debora Pierucci, Jacopo Baima, Betül Pamuk, Julien Chaste, Daniel Utt, Miroslav Bartos, Karol Nogajewski, Benjamin A. Piot, Milan Orlita, Marek Potemski, Matteo Calandra, Maria C. Asensio, Francesco Mauri, Clément Faugeras, Abdelkarim Ouerghi

Abstract: The crystallographic stacking order in multilayer graphene plays an important role in determining its electronic properties. It has been predicted that a rhombohedral (ABC) stacking displays a conducting surface state with flat electronic dispersion. In such a flat band, the role of electron-electron correlation is enhanced possibly resulting in high Tc superconductivity, charge density wave or ma… ▽ More The crystallographic stacking order in multilayer graphene plays an important role in determining its electronic properties. It has been predicted that a rhombohedral (ABC) stacking displays a conducting surface state with flat electronic dispersion. In such a flat band, the role of electron-electron correlation is enhanced possibly resulting in high Tc superconductivity, charge density wave or magnetic orders. Clean experimental band structure measurements of ABC stacked specimens are missing because the samples are usually too small in size. Here, we directly image the band structure of large multilayer graphene flake containing approximately 14 consecutive ABC layers. Angle-resolved photoemission spectroscopy experiments reveal the flat electronic bands near the K point extends by 0.13 Å-1 at the Fermi level at liquid nitrogen temperature. First-principle calculations identify the electronic ground state as an antiferromagnetic state with a band gap of about 40 meV. △ Less

Submitted 25 June, 2018; v1 submitted 10 August, 2017; originally announced August 2017.

Journal ref: Phys. Rev. B 97, 245421 (2018)

Tunable Quantum Criticality and Super-ballistic Transport in a `Charge' Kondo Circuit

Authors: Z. Iftikhar, A. Anthore, A. K. Mitchell, F. D. Parmentier, U. Gennser, A. Ouerghi, A. Cavanna, C. Mora, P. Simon, F. Pierre

Abstract: Quantum phase transitions are ubiquitous in many exotic behaviors of strongly-correlated materials. However the microscopic complexity impedes their quantitative understanding. Here, we observe thoroughly and comprehend the rich strongly-correlated physics in two profoundly dissimilar regimes of quantum criticality. With a circuit implementing a quantum simulator for the three-channel Kondo model,… ▽ More Quantum phase transitions are ubiquitous in many exotic behaviors of strongly-correlated materials. However the microscopic complexity impedes their quantitative understanding. Here, we observe thoroughly and comprehend the rich strongly-correlated physics in two profoundly dissimilar regimes of quantum criticality. With a circuit implementing a quantum simulator for the three-channel Kondo model, we reveal the universal scalings toward different low-temperature fixed points and along the multiple crossovers from quantum criticality. Notably, an unanticipated violation of the maximum conductance for ballistic free electrons is uncovered. The present charge pseudospin implementation of a Kondo impurity opens access to a broad variety of strongly-correlated phenomena. △ Less

Submitted 3 July, 2018; v1 submitted 8 August, 2017; originally announced August 2017.

Comments: Article (6 figures) with supplementary (4 figures); http://science.sciencemag.org/content/360/6395/1315

Journal ref: Science 360, 1315-1320 (2018)

Tunable Quasiparticle Band Gap in Few Layer GaSe/graphene Van der Waals Heterostructures

Authors: Zeineb Ben Aziza, Debora Pierucci, Hugo Henck, Mathieu G. Silly, Christophe David, Mina Yoon, Fausto Sirotti, Kai Xiao, Mahmoud Eddrief, Jean-Christophe Girard, Abdelkarim Ouerghi

Abstract: Two-dimensional (2D) materials have recently been the focus of extensive research. By following a similar trend as graphene, other 2D materials including transition metal dichalcogenides (MX2) and metal mono-chalcogenides (MX) show great potential for ultrathin nanoelectronic and optoelectronic devices. Despite the weak nature of interlayer forces in semiconducting MX materials, their electronic p… ▽ More Two-dimensional (2D) materials have recently been the focus of extensive research. By following a similar trend as graphene, other 2D materials including transition metal dichalcogenides (MX2) and metal mono-chalcogenides (MX) show great potential for ultrathin nanoelectronic and optoelectronic devices. Despite the weak nature of interlayer forces in semiconducting MX materials, their electronic properties are highly dependent on the number of layers. Using scanning tunneling microscopy and spectroscopy (STM/STS), we demonstrate the tunability of the quasiparticle energy gap of few layered gallium selenide (GaSe) directly grown on a bilayer graphene substrate by molecular beam epitaxy (MBE). Our results show that the band gap is about 3.50 +/-0.05 eV for single-tetralayer (1TL), 3.00 +/-0.05 eV for bi-tetralayer (2TL) and 2.30 +/-0.05 eV for tri-tetralayer (3TL). This band gap evolution of GaSe, in particularly the shift of the valence band with respect to the Fermi level, was confirmed by angle-resolved photoemission spectroscopy (ARPES) measurements and our theoretical calculations. Moreover, we observed a charge transfer in GaSe/graphene van der Waals (vdW) heterostructure using ARPES. These findings demonstrate the high impact on the GaSe electronic band structure and electronic properties that can be obtained by the control of 2D materials layer thickness and the graphene induced do**. △ Less

Submitted 5 July, 2017; originally announced July 2017.

Journal ref: Physical Review B 96, 045404 (2017)

Primary thermometry triad at 6 mK in mesoscopic circuits

Authors: Z. Iftikhar, A. Anthore, S. Jezouin, F. D. Parmentier, Y. **, A. Cavanna, A. Ouerghi, U. Gennser, F. Pierre

Abstract: Quantum physics emerge and develop as temperature is reduced. Although mesoscopic electrical circuits constitute an outstanding platform to explore quantum behavior, the challenge in cooling the electrons impedes their potential. The strong coupling of such micrometer-scale devices with the measurement lines, combined with the weak coupling to the substrate, makes them extremely difficult to therm… ▽ More Quantum physics emerge and develop as temperature is reduced. Although mesoscopic electrical circuits constitute an outstanding platform to explore quantum behavior, the challenge in cooling the electrons impedes their potential. The strong coupling of such micrometer-scale devices with the measurement lines, combined with the weak coupling to the substrate, makes them extremely difficult to thermalize below 10 mK and imposes in-situ thermometers. Here we demonstrate electronic quantum transport at 6 mK in micrometer-scale mesoscopic circuits. The thermometry methods are established by the comparison of three in-situ primary thermometers, each involving a different underlying physics. The employed combination of quantum shot noise, quantum back-action of a resistive circuit and conductance oscillations of a single-electron transistor covers a remarkably broad spectrum of mesoscopic phenomena. The experiment, performed in vacuum using a standard cryogen-free dilution refrigerator, paves the way toward the sub-millikelvin range with additional thermalization and refrigeration techniques. △ Less

Submitted 12 October, 2016; originally announced October 2016.

Comments: Article and Supplementary

Journal ref: Nature Communications 7, 12908 (2016)

Controlling charge quantization with quantum fluctuations

Authors: S. Jezouin, Z. Iftikhar, A. Anthore, F. D. Parmentier, U. Gennser, A. Cavanna, A. Ouerghi, I. P. Levkivskyi, E. Idrisov, E. V. Sukhorukov, L. I. Glazman, F. Pierre

Abstract: In 1909, Millikan showed that the charge of electrically isolated systems is quantized in units of the elementary electron charge e. Today, the persistence of charge quantization in small, weakly connected conductors allows for circuits where single electrons are manipulated, with applications in e.g. metrology, detectors and thermometry. However, quantum fluctuations progressively reduce the disc… ▽ More In 1909, Millikan showed that the charge of electrically isolated systems is quantized in units of the elementary electron charge e. Today, the persistence of charge quantization in small, weakly connected conductors allows for circuits where single electrons are manipulated, with applications in e.g. metrology, detectors and thermometry. However, quantum fluctuations progressively reduce the discreteness of charge as the connection strength is increased. Here we report on the full quantum control and characterization of charge quantization. By using semiconductor-based tunable elemental conduction channels to connect a micrometer-scale metallic island, the complete evolution is explored while scanning the entire range of connection strengths, from tunnel barrier to ballistic contact. We observe a robust scaling of charge quantization as the square root of the residual electron reflection probability across a quantum channel when approaching the ballistic critical point, which also applies beyond the regimes yet accessible to theory. At increased temperatures, the thermal fluctuations result in an exponential suppression of charge quantization as well as in a universal square root scaling, for arbitrary connection strengths, in agreement with expectations. Besides direct applications to improve single-electron functionalities and for the metal-semiconductor hybrids emerging in the quest toward topological quantum computing, the knowledge of the quantum laws of electricity will be essential for the quantum engineering of future nanoelectronic devices. △ Less

Submitted 28 September, 2016; originally announced September 2016.

Comments: Letter and Methods; See also Nature News & Views: Y. Nazarov, Nature 536, 38 (2016)

Journal ref: Nature 536, 58 (2016)

Electron phase shift at the zero-bias anomaly of quantum point contacts

Authors: B. Brun, F. Martins, S. Faniel, B. Hackens, A. Cavanna, C. Ulysse, A. Ouerghi, U. Gennser, D. Mailly, P. Simon, S. Huant, V. Bayot, M. Sanquer, H. Sellier

Abstract: The Kondo effect is the many-body screening of a local spin by a cloud of electrons at very low temperature. It has been proposed as an explanation of the zero-bias anomaly in quantum point contacts where interactions drive a spontaneous charge localization. However, the Kondo origin of this anomaly remains under debate, and additional experimental evidence is necessary. Here we report on the firs… ▽ More The Kondo effect is the many-body screening of a local spin by a cloud of electrons at very low temperature. It has been proposed as an explanation of the zero-bias anomaly in quantum point contacts where interactions drive a spontaneous charge localization. However, the Kondo origin of this anomaly remains under debate, and additional experimental evidence is necessary. Here we report on the first phase-sensitive measurement of the zero-bias anomaly in quantum point contacts using a scanning gate microscope to create an electronic interferometer. We observe an abrupt shift of the interference fringes by half a period in the bias range of the zero-bias anomaly, a behavior which cannot be reproduced by single-particle models. We instead relate it to the phase shift experienced by electrons scattering off a Kondo system. Our experiment therefore provides new evidence of this many-body effect in quantum point contacts. △ Less

Submitted 29 March, 2016; originally announced March 2016.

Journal ref: Physical Review Letters 116, 136801 (2016)

Disorder-perturbed Landau levels in high electron mobility epitaxial graphene

Authors: Simon Maëro, Abderrezak Torche, Thanyanan Phuphachong, Emiliano Pallecchi, Abdelkarim Ouerghi, Robson Ferreira, Louis-Anne de Vaulchier, Yves Guldner

Abstract: We show that the Landau levels in epitaxial graphene in presence of localized defects are significantly modified compared to those of an ideal system. We report on magneto-spectroscopy experiments performed on high quality samples. Besides typical interband magneto-optical transitions, we clearly observe additional transitions that involve perturbed states associated to short-range impurities such… ▽ More We show that the Landau levels in epitaxial graphene in presence of localized defects are significantly modified compared to those of an ideal system. We report on magneto-spectroscopy experiments performed on high quality samples. Besides typical interband magneto-optical transitions, we clearly observe additional transitions that involve perturbed states associated to short-range impurities such as vacancies. Their intensity is found to decrease with an annealing process and a partial self-healing over time is observed. Calculations of the perturbed Landau levels by using a delta-like potential show electronic states both between and at the same energies of the Laudau levels of ideal graphene. The calculated absorption spectra involving all perturbed and unperturbed states are in very good agreement with the experiments. △ Less

Submitted 16 October, 2014; originally announced October 2014.

Journal ref: Phys. Rev. B 90, 195433 (2014)

High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen

Authors: E. Pallecchi, F. Lafont, V. Cavaliere, F. Schopfer, D. Mailly, W. Poirier, A. Ouerghi

Abstract: We investigate the magneto-transport properties of epitaxial graphene single-layer on 4H-SiC(0001), grown by atmospheric pressure graphitization in Ar, followed by H2 intercalation. We directly demonstrate the importance of saturating the Si dangling bonds at the graphene/SiC(0001) interface to achieve high carrier mobility. Upon successful Si dangling bonds elimination, carrier mobility increases… ▽ More We investigate the magneto-transport properties of epitaxial graphene single-layer on 4H-SiC(0001), grown by atmospheric pressure graphitization in Ar, followed by H2 intercalation. We directly demonstrate the importance of saturating the Si dangling bonds at the graphene/SiC(0001) interface to achieve high carrier mobility. Upon successful Si dangling bonds elimination, carrier mobility increases from 3 000 cm^2/Vs to > 11 000 cm^2/Vs at 0.3 K. Additionally, graphene electron concentration tends to decrease from a few 10^12 cm^-2 to less than 10^12 cm^-2. For a typical large (30x280 um^2) Hall bar, we report the observation of the integer quantum Hall states at 0.3 K with well developed transversal resistance plateaus at Landau level fillings factors of nu = 2, 6, 10, 14.. 42 and Shubnikov de Haas oscillation of the longitudinal resistivity observed from about 1 T. In such a device, the Hall state quantization at nu=2, at 19 T and 0.3 K, can be very robust: the dissipation in electronic transport can stay very low, with the longitudinal resistivity lower than 5 mOhm, for measurement currents as high as 250 uA. This is very promising in the view of an application in metrology. △ Less

Submitted 20 March, 2014; originally announced March 2014.

Wigner and Kondo physics in quantum point contacts revealed by scanning gate microscopy

Authors: B. Brun, F. Martins, S. Faniel, B. Hackens, G. Bachelier, A. Cavanna, C. Ulysse, A. Ouerghi, U. Gennser, D. Mailly, S. Huant, V. Bayot, M. Sanquer, H. Sellier

Abstract: Quantum point contacts exhibit mysterious conductance anomalies in addition to well known conductance plateaus at multiples of 2e^2/h. These 0.7 and zero-bias anomalies have been intensively studied, but their microscopic origin in terms of many-body effects is still highly debated. Here we use the charged tip of a scanning gate microscope to tune in situ the electrostatic potential of the point c… ▽ More Quantum point contacts exhibit mysterious conductance anomalies in addition to well known conductance plateaus at multiples of 2e^2/h. These 0.7 and zero-bias anomalies have been intensively studied, but their microscopic origin in terms of many-body effects is still highly debated. Here we use the charged tip of a scanning gate microscope to tune in situ the electrostatic potential of the point contact. While swee** the tip distance, we observe repetitive splittings of the zero-bias anomaly, correlated with simultaneous appearances of the 0.7 anomaly. We interpret this behaviour in terms of alternating equilibrium and non-equilibrium Kondo screenings of different spin states localized in the channel. These alternating Kondo effects point towards the presence of a Wigner crystal containing several charges with different parities. Indeed, simulations show that the electron density in the channel is low enough to reach one-dimensional Wigner crystallization over a size controlled by the tip position. △ Less

Submitted 18 December, 2014; v1 submitted 31 July, 2013; originally announced July 2013.

Journal ref: Nature Communications 5, 4290 (2014)

Effect of Oxygen Adsorption on the Local Properties of Epitaxial Graphene on SiC (0001)

Authors: C. Mathieu, B. Lalmi, T. O. Mentes, E. Pallecchi, A. Locatelli, S. Latil, R. Belkhou, A. Ouerghi

Abstract: The effect of oxygen adsorption on the local structure and electronic properties of monolayer graphene grown on SiC(0001) has been studied by means of Low Energy Electron Microscopy (LEEM), microprobe Low Energy Electron Diffraction (\muLEED) and microprobe Angle Resolved Photoemission (\muARPES). We show that the buffer layer of epitaxial graphene on SiC(0001) is partially decoupled after oxidati… ▽ More The effect of oxygen adsorption on the local structure and electronic properties of monolayer graphene grown on SiC(0001) has been studied by means of Low Energy Electron Microscopy (LEEM), microprobe Low Energy Electron Diffraction (\muLEED) and microprobe Angle Resolved Photoemission (\muARPES). We show that the buffer layer of epitaxial graphene on SiC(0001) is partially decoupled after oxidation. The monitoring of the oxidation process demonstrates that the oxygen saturates the Si dangling bonds, breaks some Si-C bonds at the interface and intercalates the graphene layer. Accurate control over the oxidation parameters enables us to tune the charge density modulation in the layer. △ Less

Submitted 12 June, 2012; originally announced June 2012.

Comments: 12 pages, 4 figures

Observation of the quantum Hall effect in epitaxial graphene on SiC(0001) with oxygen adsorption

Authors: E. Pallecchi, M. Ridene, D. Kazazis, C. Mathieu, F. Schopfer, W. Poirier, D. Mailly, A. Ouerghi

Abstract: In this letter we report on transport measurements of epitaxial graphene on SiC(0001) with oxygen adsorption. In a $50\times 50 μ\mathrm{m^2}$ size Hall bar we observe the half-integer quantum Hall effect with a transverse resistance plateau quantized at filling factor around $ν= 2$, an evidence of monolayer graphene. We find low electron concentration of $9\times 10^{11} \textrm{cm}^{-2}$ and we… ▽ More In this letter we report on transport measurements of epitaxial graphene on SiC(0001) with oxygen adsorption. In a $50\times 50 μ\mathrm{m^2}$ size Hall bar we observe the half-integer quantum Hall effect with a transverse resistance plateau quantized at filling factor around $ν= 2$, an evidence of monolayer graphene. We find low electron concentration of $9\times 10^{11} \textrm{cm}^{-2}$ and we show that a do** of $10^{13}\textrm{cm}^{-2}$ which is characteristic of intrinsic epitaxial graphene can be restored by vacuum annealing. The effect of oxygen adsorption on carrier density is confirmed by local angle-resolved photoemission spectroscopy measurements. These results are important for understanding oxygen adsorption on epitaxial graphene and for its application to metrology and mesoscopic physics where a low carrier concentration is required. △ Less

Submitted 12 July, 2012; v1 submitted 15 March, 2012; originally announced March 2012.

Comments: 4 pages, 3 figures

Journal ref: Appl. Phys. Lett. 100, 253109 (2012)