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Terahertz spin ratchet effect in magnetic metamaterials
Authors:
M. Hild,
L. E. Golub,
A. Fuhrmann,
M. Otteneder,
M. Kronseder,
M. Matsubara,
T. Kobayashi,
D. Oshima,
A. Honda,
T. Kato,
J. Wunderlich,
C. Back,
S. D. Ganichev
Abstract:
We report on spin ratchet currents driven by terahertz radiation electric fields in a Co/Pt magnetic metamaterial formed by triangle-shaped holes forming an antidots lattice and subjected to an external magnetic field applied perpendicularly to the metal film plane. We show that for a radiation wavelength substantially larger than the period of the antidots array the radiation causes a polarizatio…
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We report on spin ratchet currents driven by terahertz radiation electric fields in a Co/Pt magnetic metamaterial formed by triangle-shaped holes forming an antidots lattice and subjected to an external magnetic field applied perpendicularly to the metal film plane. We show that for a radiation wavelength substantially larger than the period of the antidots array the radiation causes a polarization-independent spin-polarized ratchet current. The current is generated by the periodic asymmetric radiation intensity distribution caused by the near-field diffraction at the edges of the antidots, which induces spatially inhomogeneous periodic electron gas heating, and a phase-shifted periodic asymmetric electrostatic force. The developed microscopic theory shows that the magnetization of the Co/Pt film results in a spin ratchet current caused by both the anomalous Hall and the anomalous Nernst effects. Additionally, we observed a polarization-dependent trigonal spin photocurrent, which is caused by the scattering of electrons at the antidot boundaries resulting in a spin-polarized current due to the magnetization. Microscopic theory of these effects reveals that the trigonal photocurrent is generated at the boundaries of the triangle antidots, whereas the spin ratchet is generated due to the spatially periodic temperature gradient over the whole film. This difference causes substantially different hysteresis widths of these two currents.
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Submitted 16 January, 2023;
originally announced January 2023.
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THz ratchet effect in HgTe interdigitated structures
Authors:
I. Yahniuk,
G. V. Budkin,
A. Kazakov,
M. Otteneder,
J. Ziegler,
D. Weiss,
N. N. Mikhailov,
S. A. Dvoretskii,
T. Wojciechowski,
V. V. Bel'kov,
W. Knap,
S. D. Ganichev
Abstract:
The emergence of ratchet effects in two-dimensional materials is strongly correlated with the introduction of asymmetry into the system. In general, dual-grating-gate structures forming lateral asymmetric superlattices provide a suitable platform for studying this phenomenon. Here, we report on the observation of ratchet effects in HgTe-based dual-grating-gate structures hosting different band str…
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The emergence of ratchet effects in two-dimensional materials is strongly correlated with the introduction of asymmetry into the system. In general, dual-grating-gate structures forming lateral asymmetric superlattices provide a suitable platform for studying this phenomenon. Here, we report on the observation of ratchet effects in HgTe-based dual-grating-gate structures hosting different band structure properties. Applying polarized terahertz laser radiation we detected linear and polarization independent ratchets, as well as an radiation-helicity driven circular ratchet effect. Studying the ratchet effect in devices made of quantum wells (QWs) of different thickness we observed that the magnitude of the signal substantially increases with decreasing QW width with a maximum value for devices made of QWs of critical thickness hosting Dirac fermions. Furthermore, swee** the gate voltage amplitude we observed sign-alternating oscillations for gate voltages corresponding to p-type conductivity. The amplitude of the oscillations is more than two orders of magnitude larger than the signal for n-type conducting QWs. The oscillations and the signal enhancement are shown to be caused by the complex valence band structure of HgTe-based QWs. These peculiar features of the ratchet currents make these materials an ideal platform for the development of THz applications.
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Submitted 28 February, 2022;
originally announced February 2022.
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Highly Superlinear Giant Terahertz Photoconductance in GaAs Quantum Point Contacts in the Deep Tunneling Regime
Authors:
M. Otteneder,
M. Hild,
Z. D. Kvon,
E. E. Rodyakina,
M. M. Glazov,
S. D. Ganichev
Abstract:
A highly superlinear in radiation intensity photoconductance induced by terahertz laser radiation with moderate intensities has been observed in quantum point contacts made of GaAs quantum wells operating in the deep tunneling regime. For very low values of the normalized dark conductance $G_{\rm dark}/ G_0 \approx 10^{-6}$, with the conductance quantum $G_0=2e^2/h$, the photoconductance scales ex…
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A highly superlinear in radiation intensity photoconductance induced by terahertz laser radiation with moderate intensities has been observed in quantum point contacts made of GaAs quantum wells operating in the deep tunneling regime. For very low values of the normalized dark conductance $G_{\rm dark}/ G_0 \approx 10^{-6}$, with the conductance quantum $G_0=2e^2/h$, the photoconductance scales exponentially with the radiation intensity, so that already at $ 100 \text{ mW}/\text{cm}^2$ it increases by almost four orders of magnitude. This effect is observed for a radiation electric field oriented along the source drain direction. We provide model considerations of the effect and attribute it to the variation of the tunneling barrier height by the radiation field made possible by local diffraction effects. We also demonstrate that cyclotron resonance due to an external magnetic field manifests itself in the photoconductance completely suppressing the photoresponse.
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Submitted 10 August, 2021;
originally announced August 2021.
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Terahertz photoresistivity of a high-mobility 3D topological insulator based on a strained HgTe film
Authors:
M. L. Savchenko,
M. Otteneder,
I. A. Dmitriev,
N. N. Mikhailov,
Z. D. Kvon,
S. D. Ganichev
Abstract:
We report on a detailed study of the terahertz (THz) photoresistivity in a strained HgTe three-dimensional topological insulator (3D TI) for all Fermi level positions: inside the conduction and valence bands, and in the bulk gap. In the presence of a magnetic field we detect a resonance corresponding to the cyclotron resonance (CR) in the top surface Dirac fermions (DF) and examine the nontrivial…
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We report on a detailed study of the terahertz (THz) photoresistivity in a strained HgTe three-dimensional topological insulator (3D TI) for all Fermi level positions: inside the conduction and valence bands, and in the bulk gap. In the presence of a magnetic field we detect a resonance corresponding to the cyclotron resonance (CR) in the top surface Dirac fermions (DF) and examine the nontrivial dependence of the surface state cyclotron mass on the Fermi level position. We also detect additional resonant features at moderate electron densities and demonstrate that they are caused by the mixing of surface DF and bulk electrons. At high electron densities, we observe THz radiation induced 1/B-periodic low-field magneto-oscillations coupled to harmonics of the CR and demonstrate that they have a common origin with microwave-induced resistance oscillations (MIRO) previously observed in high mobility GaAs-based heterostructures. This observation attests the superior quality of 2D electron system formed by helical surface states in strained HgTe films.
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Submitted 20 November, 2020; v1 submitted 11 August, 2020;
originally announced August 2020.
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Terahertz photogalvanics in twisted bilayer graphene close to the second magic angle
Authors:
M. Otteneder,
S. Hubmann,
X. Lu,
D. Kozlov,
L. E. Golub,
K. Watanabe,
T. Taniguchi,
D. K. Efetov,
S. D. Ganichev
Abstract:
We report on the observation of photogalvanic effects in twisted bilayer graphene (tBLG) with a twist angle of 0.6°. We show that excitation of tBLG bulk causes a photocurrent, whose sign and magnitude are controlled by orientation of the radiation electric field and the photon helicity. The observed photocurrent provides evidence for the reduction of the point group symmetry in low twist-angle tB…
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We report on the observation of photogalvanic effects in twisted bilayer graphene (tBLG) with a twist angle of 0.6°. We show that excitation of tBLG bulk causes a photocurrent, whose sign and magnitude are controlled by orientation of the radiation electric field and the photon helicity. The observed photocurrent provides evidence for the reduction of the point group symmetry in low twist-angle tBLG to the lowest possible one. The developed theory shows that the current is formed by asymmetric scattering in gyrotropic tBLG. We also detected the photogalvanic current formed in the vicinity of the edges. For both, bulk and edge photocurrents, we demonstrate the emergence of pronounced oscillations upon variation of the gate voltage. The gate voltages associated with the oscillations coincide well with peaks in resistance measurements. These are well explained by inter-band transitions between a multitude of isolated bands in tBLG.
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Submitted 15 June, 2020;
originally announced June 2020.
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Terahertz Magnetospectroscopy of Cyclotron Resonances from Topological Surface States in Thick Films of Cd$_x$Hg$_{1-x}$Te
Authors:
M. Otteneder,
D. Sacré,
I. Yahniuk,
G. V. Budkin,
K. Diendorfer,
D. A. Kozlov,
I. A. Dmitriev,
N. N. Mikhailov,
S. A. Dvoretsky,
S. A. Tarasenko,
V. V. Bel'kov,
W. Knap,
S. D. Ganichev
Abstract:
We present studies of the cyclotron resonance (CR) in thick Cd$_x$Hg$_{1-x}$Te films with different cadmium concentrations corresponding to inverted and normal band order, as well as to an almost linear energy dispersion. Our results demonstrate that formation of two-dimensional topological surface states requires sharp interfaces between layers with inverted and normal band order, in which case t…
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We present studies of the cyclotron resonance (CR) in thick Cd$_x$Hg$_{1-x}$Te films with different cadmium concentrations corresponding to inverted and normal band order, as well as to an almost linear energy dispersion. Our results demonstrate that formation of two-dimensional topological surface states requires sharp interfaces between layers with inverted and normal band order, in which case the corresponding CR is clearly observed for the out-of-plane orientation of magnetic field, but does not show up for an in-plane orientation. By contrast, all samples having more conventional technological design with smooth interfaces (i.e., containing regions of Cd$_x$Hg$_{1-x}$Te with gradually changing Cd content $x$) show equally pronounced CR in both in-plane and out-of-plane magnetic field revealing that CR is excited in three-dimensional states. Modeling of the surface states for different film designs supports our main observations. In all samples, we observe additional broad helicity-independent resonances which are attributed to photo-ionization and magnetic freeze-out of impurity states.
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Submitted 13 January, 2020;
originally announced January 2020.
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Symmetry breaking and circular photogalvanic effect in epitaxial Cd$_x$Hg$_{1-x}$Te films
Authors:
S. Hubmann,
G. V. Budkin,
M. Otteneder,
D. But,
D. Sacré,
I. Yahniuk,
K. Diendorfer,
V. V. Bel'kov,
D. A. Kozlov,
N. N. Mikhailov,
S. A. Dvoretsky,
V. S. Varavin,
V. G. Remesnik,
S. A. Tarasenko,
W. Knap,
S. D. Ganichev
Abstract:
We report on the observation of symmetry breaking and the circular photogalvanic effect in Cd$_x$Hg$_{1-x}$Te alloys. We demonstrate that irradiation of bulk epitaxial films with circularly polarized terahertz radiation leads to the circular photogalvanic effect (CPGE) yielding a photocurrent whose direction reverses upon switching the photon helicity. This effect is forbidden in bulk zinc-blende…
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We report on the observation of symmetry breaking and the circular photogalvanic effect in Cd$_x$Hg$_{1-x}$Te alloys. We demonstrate that irradiation of bulk epitaxial films with circularly polarized terahertz radiation leads to the circular photogalvanic effect (CPGE) yielding a photocurrent whose direction reverses upon switching the photon helicity. This effect is forbidden in bulk zinc-blende crystals by symmetry arguments, therefore, its observation indicates either the symmetry reduction of bulk material or that the photocurrent is excited in the topological surface states formed in a material with low Cadmium concentration. We show that the bulk states play a crucial role because the CPGE was also clearly detected in samples with non-inverted band structure. We suggest that strain is a reason of the symmetry reduction. We develop a theory of the CPGE showing that the photocurrent results from the quantum interference of different pathways contributing to the free-carrier absorption (Drude-like) of monochromatic radiation.
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Submitted 5 November, 2019;
originally announced November 2019.
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Cyclotron resonance induced photogalvanic effect in surface states of 200 nm thick strained HgTe films
Authors:
S. Candussio,
G. V. Budkin,
M. Otteneder,
D. A. Kozlov,
I. A. Dmitriev,
V. V. Bel'kov,
Z. D. Kvon,
N. N. Mikhailov,
S. A. Dvoretsky,
S. D. Ganichev
Abstract:
We report on the study of magneto-photogalvanic and magnetotransport phenomena in 200 nm partially strained HgTe films. This thickness is slightly larger than the estimated critical thickness of lattice relaxation leaving the film partially relaxed with the value of the energy gap close to zero. We show that illumination of HgTe films with monochromatic terahertz laser radiation results in a giant…
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We report on the study of magneto-photogalvanic and magnetotransport phenomena in 200 nm partially strained HgTe films. This thickness is slightly larger than the estimated critical thickness of lattice relaxation leaving the film partially relaxed with the value of the energy gap close to zero. We show that illumination of HgTe films with monochromatic terahertz laser radiation results in a giant resonant photocurrent caused by the cyclotron resonance in the surface states. The resonant photocurrent is also detected in the reference fully strained 80 nm HgTe films previously shown to be fully gapped 3D topological insulators. We show that the resonance positions in both types of films almost coincide demonstrating the existence of topologically protected surface states in thick HgTe films. The conclusion is supported by magnetotransport experiments.
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Submitted 2 May, 2019; v1 submitted 8 February, 2019;
originally announced February 2019.
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High frequency impact ionization and nonlinearity of photocurrent induced by intense terahertz radiation in HgTe-based quantum well structures
Authors:
S. Hubmann,
G. V. Budkin,
A. P. Dmitriev,
S. Gebert,
V. V. Belkov,
E. L. Ivchenko,
S. Baumann,
M. Otteneder,
D. A. Kozlov,
N. N. Mikhailov,
S. A. Dvoretsky,
Z. D. Kvon,
S. D. Ganichev
Abstract:
We report on a strong nonlinear behavior of the photogalvanics and photoconductivity under excitation of HgTe quantum wells (QWs) by intense terahertz (THz) radiation. The increasing radiation intensity causes an inversion of the sign of the photocurrent and transition to its superlinear dependence on the intensity. The photoconductivity also shows a superlinear raise with the intensity. We show t…
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We report on a strong nonlinear behavior of the photogalvanics and photoconductivity under excitation of HgTe quantum wells (QWs) by intense terahertz (THz) radiation. The increasing radiation intensity causes an inversion of the sign of the photocurrent and transition to its superlinear dependence on the intensity. The photoconductivity also shows a superlinear raise with the intensity. We show that the observed photoresponse nonlinearities are caused by the band-to-band \emph{light} impact ionization under conditions of a photon energy less than the forbidden gap. The signature of this kind of impact ionization is that the angular radiation frequency $ω=2πf$ is much higher than the reciprocal momentum relaxation time. Thus, the impact ionization takes place solely because of collisions in the presence of a high-frequency electric field. The effect has been measured on narrow HgTe/CdTe QWs of 5.7\,nm width; the nonlinearity is detected for linearly and circularly polarized THz radiation with different frequencies ranging from $f=0.6$ to 1.07\,THz and intensities up to hundreds of kW/cm$^2$. We demonstrate that the probability of the impact ionization is proportional to the exponential function, $\exp(-E_0^2/E^2)$, of the radiation electric field amplitude $E$ and the characteristic field parameter $E_0$. The effect is observable in a wide temperature range from 4.2 to 90\,K, with the characteristic field increasing with rising temperature.
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Submitted 4 December, 2018;
originally announced December 2018.
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Sign-alternating photoconductivity and magnetoresistance oscillations induced by terahertz radiation in HgTe quantum wells
Authors:
M. Otteneder,
I. A. Dmitriev,
S. Candussio,
M. L. Savchenko,
D. A. Kozlov,
V. V. Bel'kov,
Z. D. Kvon,
N. N. Mikhailov,
S. A. Dvoretsky,
S. D. Ganichev
Abstract:
We report on the observation of terahertz radiation induced photoconductivity and of terahertz analog of the microwave-induced resistance oscillations (MIRO) in HgTe-based quantum well (QW) structures of different width. The MIRO-like effect has been detected in QWs of 20 nm thickness with inverted band structure and a rather low mobility of about 3 $\times$ 10$^5$ cm$^2$/V s. In a number of other…
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We report on the observation of terahertz radiation induced photoconductivity and of terahertz analog of the microwave-induced resistance oscillations (MIRO) in HgTe-based quantum well (QW) structures of different width. The MIRO-like effect has been detected in QWs of 20 nm thickness with inverted band structure and a rather low mobility of about 3 $\times$ 10$^5$ cm$^2$/V s. In a number of other structures with QW widths ranging from 5 to 20 nm and lower mobility we observed an unconventional non-oscillatory photoconductivity signal which changes its sign upon magnetic field increase. This effect was observed in structures characterized by both normal and inverted band ordering, as well as in QWs with critical thickness and linear dispersion. In samples having Hall bar and Corbino geometries an increase of the magnetic field resulted in a single and double change of the sign of the photoresponse, respectively. We show that within the bolometric mechanism of the photoresponse these unusual features imply a non-monotonic behavior of the transport scattering rate, which should decrease (increase) with temperature for magnetic fields below (above) the certain value. This behavior is found to be consistent with the results of dark transport measurements of magnetoresistivity at different sample temperatures. Our experiments demonstrate that photoconductivity is a very sensitive probe of the temperature variations of the transport characteristics, even those that are hardly detectable using standard transport measurements.
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Submitted 27 July, 2018;
originally announced July 2018.
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Giant terahertz photoconductance of tunneling point contacts
Authors:
M. Otteneder,
Z. D. Kvon,
O. A. Tkachenko,
V. A. Tkachenko,
A. S. Jaroshevich,
E. E. Rodyakina,
A. V. Latyshev,
S. D. Ganichev
Abstract:
We report on the observation of the giant photoconductance of a quantum point contact (QPC) in tunneling regime excited by terahertz radiation. Studied QPCs are formed in a GaAs/AlGaAs heterostructure with a high-electron-mobility two-dimensional electron gas. We demonstrate that irradiation of strongly negatively biased QPCs by laser radiation with frequency f = 0.69 THz and intensity 50 mW/cm^2…
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We report on the observation of the giant photoconductance of a quantum point contact (QPC) in tunneling regime excited by terahertz radiation. Studied QPCs are formed in a GaAs/AlGaAs heterostructure with a high-electron-mobility two-dimensional electron gas. We demonstrate that irradiation of strongly negatively biased QPCs by laser radiation with frequency f = 0.69 THz and intensity 50 mW/cm^2 results in two orders of magnitude enhancement of the QPC conductance. The effect has a superlinear intensity dependence and increases with the dark conductivity decrease. It is also characterized by strong polarization and frequency dependencies. We demonstrate that all experimental findings can be well explained by the photon-mediated tunneling through the QPC. Corresponding calculations are in a good agreement with the experiment.
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Submitted 21 December, 2017;
originally announced December 2017.
