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Towards a Unified Formalism of Multivariate Coefficients of Variation -- Application to the Analysis of Polarimetric Speckle Time Series
Authors:
Elise Colin,
Razvigor Ossikovski
Abstract:
This article primarily aims to unify the various formalisms of multivariate coefficients of variation, leveraging advanced concepts of generalized means, whether weighted or not, applied to the eigenvalues of covariance matrices. We highlight the existence of an infinite number of these coefficients and demonstrate that they are bounded. Moreover, we link the various coefficients of variation iden…
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This article primarily aims to unify the various formalisms of multivariate coefficients of variation, leveraging advanced concepts of generalized means, whether weighted or not, applied to the eigenvalues of covariance matrices. We highlight the existence of an infinite number of these coefficients and demonstrate that they are bounded. Moreover, we link the various coefficients of variation identified in the literature to specific instances within our unified formalism. We illustrate the utility of our method by applying it to a time series of polarimetric radar imagery. In this context, the coefficient of variation emerges as a key tool for detecting changes or identifying permanent scatterers, which are characterized by their remarkable temporal stability. The multidimensionality arises from the diversity of polarizations. The introduction of the various possible coefficients demonstrates how their selection impacts the detection of samples exhibiting specific temporal behaviors and underscores the contribution of polarimetry to dynamic speckle analysis.
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Submitted 12 March, 2024;
originally announced March 2024.
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3D structured Bessel beam polarization and its application to imprint chiral optical properties in silica
Authors:
Jiafeng Lu,
Mostafa Hassan,
Francois Courvoisier,
Enrique Garcia-Caurel,
Francois Brisset,
Razvigor Ossikovski,
Xianglong Zeng,
Bertrand Poumellec,
Matthieu Lancry
Abstract:
Polarization plays crucial role in light-matter interactions; hence its overall manipulation is an essential key to unlock the versatility of light manufacturing, especially in femtosecond laser direct writing. Existing polarization-sha** techniques, however, only focus on the manipulation in transverse plane of a light beam, namely a two-dimensional control. In this paper, we propose a novel pa…
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Polarization plays crucial role in light-matter interactions; hence its overall manipulation is an essential key to unlock the versatility of light manufacturing, especially in femtosecond laser direct writing. Existing polarization-sha** techniques, however, only focus on the manipulation in transverse plane of a light beam, namely a two-dimensional control. In this paper, we propose a novel passive strategy that exploits a class of femtosecond laser written space varying birefringent elements, to shape the polarization state along the optical path. As a demonstration, we generate a three-dimensional structured Bessel beam whose linear polarization state is slowly evolving along the focus (typ. 90 degrees within 60 lightwave periods). Such a "helical polarized" Bessel beam allows imprinting "twisted nanogratings" in SiO2 resulting in an extrinsic optical chirality at a micrometric scale, which owns a high optical rotation. Our work brings new perspectives for three-dimensional polarization manipulations and would find applications in structured light, light-matter interaction and chiral device fabrication.
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Submitted 17 March, 2023;
originally announced March 2023.
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Reduced lasing thresholds in GeSn microdisk cavities with defect management of the optically active region
Authors:
Anas Elbaz,
Riazul Arefin,
Emilie Sakat,
Binbin Wang,
Etienne Herth,
Gilles Patriarche,
Antonino Foti,
Razvigor Ossikovski,
Sebastien Sauvage,
Xavier Checoury,
Konstantinos Pantzas,
Isabelle Sagnes,
Jérémie Chrétien,
Lara Casiez,
Mathieu Bertrand,
Vincent Calvo,
Nicolas Pauc,
Alexei Chelnokov,
Philippe Boucaud,
Frederic Boeuf,
Vincent Reboud,
Jean-Michel Hartmann,
Moustafa El Kurdi
Abstract:
GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band structure directness, by increasing the Sn content in thick GeSn layers grown on germanium (Ge) virtual substrates (VS) on Si. These lasers nonetheless su…
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GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band structure directness, by increasing the Sn content in thick GeSn layers grown on germanium (Ge) virtual substrates (VS) on Si. These lasers nonetheless suffer from a lack of defect management and from high threshold densities. In this work we examine the lasing characteristics of GeSn alloys with Sn contents ranging from 7 \% to 10.5 \%. The GeSn layers were patterned into suspended microdisk cavities with different diameters in the 4-\SI{8 }{\micro\meter} range. We evidence direct band gap in GeSn with 7 \% of Sn and lasing at 2-\SI{2.3 }{\micro\meter} wavelength under optical injection with reproducible lasing thresholds around \SI{10 }{\kilo\watt\per\square\centi\meter}, lower by one order of magnitude as compared to the literature. These results were obtained after the removal of the dense array of misfit dislocations in the active region of the GeSn microdisk cavities. The results offer new perspectives for future designs of GeSn-based laser sources.
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Submitted 21 December, 2020;
originally announced December 2020.
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Ultra-low threshold cw and pulsed lasing in tensile strained GeSn alloys
Authors:
A. Elbaz,
D. Buca,
N. Von den Driesch,
K. Pantzas,
G. Patriarche,
N. Zerounian,
E. Herth,
X. Checoury,
S. Sauvage,
I. Sagnes,
A. Foti,
R. Ossikovski,
J. -M. Hartmann,
F. Boeuf,
Z. Ikonic,
P. Boucaud,
D. Grutzmacher,
M. El Kurdi
Abstract:
GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, similar to conventional III-V semiconductors and thus can be employed for light emitting devices. Here, we report on GeSn microdisk lasers encapsulated with a SiNx stressor layer to produce tensile strain. A 300nm GeSn la…
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GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, similar to conventional III-V semiconductors and thus can be employed for light emitting devices. Here, we report on GeSn microdisk lasers encapsulated with a SiNx stressor layer to produce tensile strain. A 300nm GeSn layer with 5.4 at.% Sn, which is an indirect band-gap semiconductor as-grown with a compressive strain of -0.32 %, is transformed via tensile strain engineering into a truly direct band-gap semiconductor. In this approach the low Sn concentration enables improved defect engineering and the tensile strain delivers a low density of states at the valence band edge, which is the light hole band. Continuous wave (cw) as well as pulsed lasing are observed at very low optical pump powers. Lasers with emission wavelength of 2.5 um have thresholds as low as 0.8kWcm^-2 for ns-pulsed excitation, and 1.1kWcm^-2 under cw excitation. These thresholds are more than two orders of magnitude lower than those previously reported for bulk GeSn lasers, approaching these values obtained for III-V lasers on Si. The present results demonstrate the feasabiliy and are the guideline for monolithically integrated Si-based laser sources on Si photonics platform.
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Submitted 14 January, 2020;
originally announced January 2020.
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A Stern-Gerlach experiment with light: separating photons by spin with the method of A. Fresnel
Authors:
Oriol Arteaga,
Enric Garcia-Caurel,
Razvigor Ossikovski
Abstract:
In 1822 A. Fresnel described an experiment to separate a beam of light into its right- and left- circular polarization components using chiral interfaces. Fresnel's experiment combined three crystalline quartz prisms of alternating handedness to achieve a visible macroscopic separation between the two circular components. Such quartz polyprisms were rather popular optical components in XIXth centu…
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In 1822 A. Fresnel described an experiment to separate a beam of light into its right- and left- circular polarization components using chiral interfaces. Fresnel's experiment combined three crystalline quartz prisms of alternating handedness to achieve a visible macroscopic separation between the two circular components. Such quartz polyprisms were rather popular optical components in XIXth century but today remain as very little known optical devices. This work shows the analogy between Fresnel's experiment and Stern-Gerlach experiment from quantum mechanics since both experiments produce selective deflection of particles (photons in case of Fresnel's method) according to their spin angular momentum. We have studied a historical quartz polyprism with eight chiral interfaces producing a large spatial separation of light by spin. We have also constructed a modified Fresnel biprism to produce smaller separations and we have illustrated the process of weak measurement for light. The polarimetric analysis of a Fresnel polyprism reveals that it acts as a spin angular momentum analyzer.
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Submitted 4 November, 2018;
originally announced November 2018.
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Singular Mueller matrices
Authors:
Jose J. Gil,
Razvigor Ossikovski,
Ignacio San Jose
Abstract:
Singular Mueller matrices play an important role in polarization algebra and have peculiar properties that stem from the fact that either the medium exhibits maximum diattenuation and/or polarizance, or because its associated canonical depolarizer has the property of fully randomizing, the circular component (at least) of the states of polarization of light incident on it. The formal reasons for w…
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Singular Mueller matrices play an important role in polarization algebra and have peculiar properties that stem from the fact that either the medium exhibits maximum diattenuation and/or polarizance, or because its associated canonical depolarizer has the property of fully randomizing, the circular component (at least) of the states of polarization of light incident on it. The formal reasons for which the Mueller matrix M of a given medium is singular are systematically investigated, analyzed and interpreted in the framework of the serial decompositions and the characteristic ellipsoids of M. The analysis allows for a general classification and geometric representation of singular Mueller matrices, of potential usefulness to experimentalists dealing with such media.
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Submitted 20 February, 2016; v1 submitted 15 December, 2015;
originally announced December 2015.
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Geometric and chemical components of the giant piezoresistance in silicon nanowires
Authors:
M. McClarty,
N. Jegenyes,
M. Gaudet,
C. Toccafondi,
R. Ossikovski,
F. Vaurette,
S. Arscott,
A. C. H. Rowe
Abstract:
A wide variety of apparently contradictory piezoresistance (PZR) behaviors have been reported in p-type silicon nanowires (SiNW), from the usual positive bulk effect to anomalous (negative) PZR and giant PZR. The origin of such a range of diverse phenomena is unclear, and consequently so too is the importance of a number of parameters including SiNW type (top down or bottom up), stress concentrati…
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A wide variety of apparently contradictory piezoresistance (PZR) behaviors have been reported in p-type silicon nanowires (SiNW), from the usual positive bulk effect to anomalous (negative) PZR and giant PZR. The origin of such a range of diverse phenomena is unclear, and consequently so too is the importance of a number of parameters including SiNW type (top down or bottom up), stress concentration, electrostatic field effects, or surface chemistry. Here we observe all these PZR behaviors in a single set of nominally p-type, $\langle 110 \rangle$ oriented, top-down SiNWs at uniaxial tensile stresses up to 0.5 MPa. Longitudinal $π$-coefficients varying from $-800\times10^{-11}$ Pa$^{-1}$ to $3000\times10^{-11}$ Pa$^{-1}$ are measured. Micro-Raman spectroscopy on chemically treated nanowires reveals that stress concentration is the principal source of giant PZR. The sign and an excess PZR similar in magnitude to the bulk effect are related to the chemical treatment of the SiNW.
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Submitted 15 July, 2016; v1 submitted 4 December, 2015;
originally announced December 2015.
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Hydrostatic strain enhancement in laterally confined SiGe nanostripes
Authors:
G. M. Vanacore,
M. Chaigneau,
N. Barrett,
M. Bollani,
F. Boioli,
M. Salvalaglio,
F. Montalenti,
N. Manini,
L. Caramella,
P. Biagioni,
D. Chrastina,
G. Isella,
O. Renault,
M. Zani,
R. Sordan,
G. Onida,
R. Ossikovski,
H. -J. Drouhin,
A. Tagliaferri
Abstract:
Strain-engineering in SiGe nanostructures is fundamental for the design of optoelectronic devices at the nanoscale. Here we explore a new strategy, where SiGe structures are laterally confined by the Si substrate, to obtain high tensile strain avoiding the use of external stressors, and thus improving the scalability. Spectro-microscopy techniques, finite element method simulations and ab initio c…
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Strain-engineering in SiGe nanostructures is fundamental for the design of optoelectronic devices at the nanoscale. Here we explore a new strategy, where SiGe structures are laterally confined by the Si substrate, to obtain high tensile strain avoiding the use of external stressors, and thus improving the scalability. Spectro-microscopy techniques, finite element method simulations and ab initio calculations are used to investigate the strain state of laterally confined Ge-rich SiGe nano-stripes. Strain information is obtained by tip enhanced Raman spectroscopy with an unprecedented lateral resolution of ~ 30 nm. The nano-stripes exhibit a large tensile hydrostatic strain component, which is maximum at the center of the top free surface, and becomes very small at the edges. The maximum lattice deformation is larger than the typical values of thermally relaxed Ge/Si(001) layers. This strain enhancement originates from a frustrated relaxation in the out-of-plane direction, resulting from the combination of the lateral confinement induced by the substrate side walls and the plastic relaxation of the misfit strain in the (001) plane at the SiGe/Si interface. The effect of this tensile lattice deformation at the stripe surface is probed by work function map**, performed with a spatial resolution better than 100 nm using X-ray photoelectron emission microscopy. The nano-stripes exhibit a positive work function shift with respect to a bulk SiGe alloy, quantitatively confirmed by electronic structure calculations of tensile strained configurations. The present results have a potential impact on the design of optoelectronic devices at a nanometer length scale.
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Submitted 6 June, 2013;
originally announced June 2013.
