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Probabilistic Examination of Least Squares Error in Low-bitwidth Cholesky Decomposition
Authors:
Alexander Osinsky,
Roman Bychkov,
Mikhail Trefilov,
Vladimir Lyashev,
Andrey Ivanov
Abstract:
In this paper, we propose a new approach to justify a round-off error impact on the accuracy of the linear least squares (LS) solution using Cholesky decomposition. This decomposition is widely employed to inverse a matrix in the linear detector of the Multi-User multi-antenna receiver. The proposed stochastic bound is much closer to actual errors than other numerical bounds. It was tested with a…
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In this paper, we propose a new approach to justify a round-off error impact on the accuracy of the linear least squares (LS) solution using Cholesky decomposition. This decomposition is widely employed to inverse a matrix in the linear detector of the Multi-User multi-antenna receiver. The proposed stochastic bound is much closer to actual errors than other numerical bounds. It was tested with a half-precision format and validated in realistic scenarios. Experimental results demonstrate our approach predicts errors very close to those achieved by simulations. The proposed approach can be employed to analyze the resulting round-off error in many other applications.
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Submitted 7 April, 2024;
originally announced April 2024.
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Virtual Sectorization to Enable Hybrid Beamforming in mm-Wave mMIMO
Authors:
Roman Bychkov,
Andrey Dergachev,
Alexander Osinsky,
Vladimir Lyashev,
Andrey Ivanov
Abstract:
Hybrid beamforming (HBF) is a key technology to enable mm-wave Massive multiple-input multiple-output (mMIMO) receivers for future-generation wireless communications. It combines beamforming in both analog (via phase shifters) and digital domains, resulting in low power consumption and high spectral efficiency. In practice, the problem of joint beamforming in multi-user scenarios is still open bec…
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Hybrid beamforming (HBF) is a key technology to enable mm-wave Massive multiple-input multiple-output (mMIMO) receivers for future-generation wireless communications. It combines beamforming in both analog (via phase shifters) and digital domains, resulting in low power consumption and high spectral efficiency. In practice, the problem of joint beamforming in multi-user scenarios is still open because an analog beam can't cover all users simultaneously. In this paper, we propose a hierarchical approach to divide users into clusters. Each cluster consists of users inside a virtual sector produced by the analog beamforming of an HBF-based mMIMO receiver. Thus, inside each sector, a lower-cost digital beamforming serves a limited number of users within the same cluster. Simulations with realistic non-line-of-sight scenarios generated by the QuaDRiGa 2.0 demonstrate that our methods outperform standard FFT-based alternatives and almost achieve SVD-based beamspace performance bound.
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Submitted 16 February, 2024;
originally announced April 2024.
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Trainable Least Squares to Reduce PAPR in OFDM-based Hybrid Beamforming Systems
Authors:
Andrey Ivanov,
Alexander Osinsky,
Roman Bychkov,
Vladimir Kalinin,
Dmitry Lakontsev
Abstract:
In this paper, we propose a trainable least squares (LS) approach for reducing the peak-to-average power ratio (PAPR) of orthogonal frequency division multiplexing (OFDM) signals in a hybrid beamforming (HBF) system. Compared to digital beamforming (DBF), in HBF technology the number of antennas exceeds the number of digital ports. Therefore, PAPR reduction capabilities are restricted by both a li…
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In this paper, we propose a trainable least squares (LS) approach for reducing the peak-to-average power ratio (PAPR) of orthogonal frequency division multiplexing (OFDM) signals in a hybrid beamforming (HBF) system. Compared to digital beamforming (DBF), in HBF technology the number of antennas exceeds the number of digital ports. Therefore, PAPR reduction capabilities are restricted by both a limited bandwidth and the reduced size of digital space. The problem is to meet both conditions. Moreover, the major HBF advantage is a reduced system complexity, thus the complexity of the PAPR reduction algorithm is expected to be low. To justify the performance of the proposed trainable LS, we provide a performance bound achieved by convex optimization using the CVX Matlab package. Moreover, the complexity of the proposed algorithm can be comparable to the minimal complexity of the digital ``twin'' calculation in HBF. The abovementioned features prove the feasibility of the trained LS for PAPR reduction in fully-connected HBF.
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Submitted 16 February, 2024;
originally announced April 2024.
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Anomalous diffusion in polydisperse granular gases: Monte Carlo simulations
Authors:
Anna S. Bodrova,
Alexander I. Osinsky
Abstract:
We perform a direct Monte Carlo simulation of the diffusion in a multicomponent granular medium. We investigate the diffusion coefficients and mean-squared displacements of granular particles in a polydisperse granular gas in a homogeneous cooling state containing an arbitrary number of species of different sizes and masses using both models of constant and time-dependent restitution coefficients.…
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We perform a direct Monte Carlo simulation of the diffusion in a multicomponent granular medium. We investigate the diffusion coefficients and mean-squared displacements of granular particles in a polydisperse granular gas in a homogeneous cooling state containing an arbitrary number of species of different sizes and masses using both models of constant and time-dependent restitution coefficients. In our study, we used a powerful low-rank algorithm that allows for efficient simulation of highly polydisperse granular systems. Mean square displacements in Monte Carlo simulations are in good agreement with theoretical predictions.
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Submitted 20 March, 2024;
originally announced March 2024.
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Smolchowski-Euler equations
Authors:
Alexander Osinsky,
Nikolay Brilliantov
Abstract:
We derive from the first principles Smoluchowski-Euler equations, describing aggregation kinetics in space-inhomogeneous systems with fluxes. Starting from Boltzmann equations, we obtain microscopic expressions for the aggregation rates for clusters of different size, and observe that they significantly differ from the currently used phenomenological rates. Moreover, we show that for a complete de…
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We derive from the first principles Smoluchowski-Euler equations, describing aggregation kinetics in space-inhomogeneous systems with fluxes. Starting from Boltzmann equations, we obtain microscopic expressions for the aggregation rates for clusters of different size, and observe that they significantly differ from the currently used phenomenological rates. Moreover, we show that for a complete description of aggregating systems, novel kinetic coefficients are needed. These may be called ``flux-reaction'' and ``energy-reaction'' rates, as they appear, respectively, in the equations for fluxes and energy. We report microscopic expressions for these coefficients. We solve numerically the Smoluchowski-Euler equations for two representative examples -- aggregation of particles at sedimentation, and aggregation after an explosion. The solution of the novel equations is compared with the solution of currently used phenomenological equations, with phenomenological rate coefficients. We find a noticeable difference between these solutions, which manifests unreliability of the phenomenological approach and the need of application of new, first-principle equations.
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Submitted 5 December, 2023;
originally announced December 2023.
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Low-rank Monte Carlo for Smoluchowski-class equations
Authors:
Alexander Osinsky
Abstract:
The work discusses a new low-rank Monte Carlo technique to solve Smoluchowski-like kinetic equations. It drastically decreases the computational complexity of modeling of size-polydisperse systems. For the studied systems it can outperform the existing methods by more than ten times; its superiority further grows with increasing system size. Application to the recently developed temperature-depend…
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The work discusses a new low-rank Monte Carlo technique to solve Smoluchowski-like kinetic equations. It drastically decreases the computational complexity of modeling of size-polydisperse systems. For the studied systems it can outperform the existing methods by more than ten times; its superiority further grows with increasing system size. Application to the recently developed temperature-dependent Smoluchowski equations is also demonstrated.
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Submitted 5 December, 2023;
originally announced December 2023.
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Band alignment of grafted monocrystalline Si (001)/$β$-Ga$_2$O$_3$ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy
Authors:
Jiarui Gong,
Jie Zhou,
Ashok Dheenan,
Moheb Sheikhi,
Fikadu Alema,
Tien Khee Ng,
Shubhra S. Pasayat,
Qiaoqiang Gan,
Andrei Osinsky,
Vincent Gambin,
Chirag Gupta,
Siddharth Rajan,
Boon S. Ooi,
Zhenqiang Ma
Abstract:
Beta-phase gallium oxide ($β$-Ga$_2$O$_3$) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates. However, the high acceptor activation energy obstructs the development of homojunction bipolar devices employing $β$-Ga$_2$O$_3$. The recently demonstrated semiconductor grafting technique provides an alternative and vi…
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Beta-phase gallium oxide ($β$-Ga$_2$O$_3$) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates. However, the high acceptor activation energy obstructs the development of homojunction bipolar devices employing $β$-Ga$_2$O$_3$. The recently demonstrated semiconductor grafting technique provides an alternative and viable approach towards lattice-mismatched $β$-Ga$_2$O$_3$-based p-n heterojunctions with high quality interfaces. Understanding and quantitatively characterizing the band alignment of the grafted heterojunctions is crucial for future bipolar device development employing the grafting method. In this work, we present a systematic study of the band alignment in the grafted monocrystalline Si/$β$-Ga$_2$O$_3$ heterostructure by employing X-ray photoelectron spectroscopy (XPS). The core level peaks and valence band spectra of the Si, $β$-Ga$_2$O$_3$, and the grafted heterojunction were carefully obtained and analyzed. The band diagrams of the Si/$β$-Ga$_2$O$_3$ heterostructure were constructed using two individual methods, the core level peak method and the valence band spectrum method, by utilizing the different portions of the measured data. The reconstructed band alignments of the Si/$β$-Ga$_2$O$_3$ heterostructure using the two different methods are identical within the error range. The band alignment is also consistent with the prediction from the electron affinity values of Si and $β$-Ga$_2$O$_3$. The study suggests that the interface defect density in grafted Si/$β$-Ga$_2$O$_3$ heterostructure is at a sufficiently low level such that Fermi level pinning at the interface has been completely avoided and the universal electron affinity rule can be safely employed to construct the band diagrams of grafted monocrystalline Si/$β$-Ga$_2$O$_3$ heterostructures.
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Submitted 1 December, 2023;
originally announced December 2023.
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Close to optimal column approximations with a single SVD
Authors:
Alexander Osinsky
Abstract:
The best column approximation in the Frobenius norm with $r$ columns has an error at most $\sqrt{r+1}$ times larger than the truncated singular value decomposition. Reaching this bound in practice involves either expensive random volume sampling or at least $r$ executions of singular value decomposition. In this paper it will be shown that the same column approximation bound can be reached with on…
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The best column approximation in the Frobenius norm with $r$ columns has an error at most $\sqrt{r+1}$ times larger than the truncated singular value decomposition. Reaching this bound in practice involves either expensive random volume sampling or at least $r$ executions of singular value decomposition. In this paper it will be shown that the same column approximation bound can be reached with only a single SVD (which can also be replaced with approximate SVD). As a corollary, it will be shown how to find a highly nondegenerate submatrix in $r$ rows of size $N$ in just $O(Nr^2)$ operations, which mostly has the same properties as the maximum volume submatrix.
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Submitted 7 November, 2023; v1 submitted 17 August, 2023;
originally announced August 2023.
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Monocrystalline Si/$β$-Ga$_2$O$_3$ p-n heterojunction diodes fabricated via grafting
Authors:
Jiarui Gong,
Donghyeok Kim,
Hokyung Jang,
Fikadu Alema,
Qingxiao Wang,
Tien Khee Ng,
Shuoyang Qiu,
Jie Zhou,
Xin Su,
Qinchen Lin,
Ranveer Singh,
Haris Abbasi,
Kelson Chabak,
Gregg Jessen,
Clincy Cheung,
Vincent Gambin,
Shubhra S. Pasayat,
Andrei Osinsky,
Boon,
S. Ooi,
Chirag Gupta,
Zhenqiang Ma
Abstract:
The $β$-Ga$_2$O$_3$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type do** in $β$-Ga$_2$O$_3$ has hindered the development of Ga$_2$O$_3$-based bipolar devices. The approach of p-n diodes formed by polycrystalline p-type oxides with n-type $β$-Ga$_2$O$_3$ can face se…
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The $β$-Ga$_2$O$_3$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type do** in $β$-Ga$_2$O$_3$ has hindered the development of Ga$_2$O$_3$-based bipolar devices. The approach of p-n diodes formed by polycrystalline p-type oxides with n-type $β$-Ga$_2$O$_3$ can face severe challenges in further advancing the $β$-Ga$_2$O$_3$ bipolar devices due to their unfavorable band alignment and the poor p-type oxide crystal quality. In this work, we applied the semiconductor grafting approach to fabricate monocrystalline Si/$β$-Ga$_2$O$_3$ p-n diodes for the first time. With enhanced concentration of oxygen atoms at the interface of Si/$β$-Ga$_2$O$_3$, double side surface passivation was achieved for both Si and $β$-Ga$_2$O$_3$ with an interface Dit value of 1-3 x 1012 /cm2 eV. A Si/$β$-Ga$_2$O$_3$ p-n diode array with high fabrication yield was demonstrated along with a diode rectification of 1.3 x 107 at +/- 2 V, a diode ideality factor of 1.13 and avalanche reverse breakdown characteristics. The diodes C-V shows frequency dispersion-free characteristics from 10 kHz to 2 MHz. Our work has set the foundation toward future development of $β$-Ga$_2$O$_3$-based transistors.
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Submitted 30 May, 2023;
originally announced May 2023.
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Exact solutions of temperature-dependent Smoluchowski equations
Authors:
Alexander Osinsky,
Nikolay Brilliantov
Abstract:
We report a number of exact solutions for temperature-dependent Smoluchowski equations. These equations quantify the ballistic agglomeration, where the evolution of densities of agglomerates of different size is entangled with the evolution of the mean kinetic energy (partial temperatures) of such clusters. The obtained exact solutions may be used as a benchmark to assess the accuracy and computat…
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We report a number of exact solutions for temperature-dependent Smoluchowski equations. These equations quantify the ballistic agglomeration, where the evolution of densities of agglomerates of different size is entangled with the evolution of the mean kinetic energy (partial temperatures) of such clusters. The obtained exact solutions may be used as a benchmark to assess the accuracy and computational efficiency of the numerical approaches, developed to solve the temperature-dependent Smoluchowski equations. Moreover, they may also illustrate the possible evolution regimes in these systems. The exact solutions have been obtained for a series of model rate coefficients, and we demonstrate that there may be an infinite number of such model coefficient which allow exact analysis. We compare our exact solutions with the numerical solutions for various evolution regimes; an excellent agreement between numerical and exact results proves the accuracy of the exploited numerical method.
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Submitted 9 October, 2022;
originally announced October 2022.
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Low Resistance Ohmic Contact On Epitaxial MOVPE-grown $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ Films
Authors:
Fikadu Alema,
Carl Peterson,
Arkka Bhattacharyya,
Saurav Roy,
Sriram Krishnamoorthy,
Andrei Osinsky
Abstract:
We report on the realization of record low resistance Ohmic contacts to MOVPE-grown heavily Si-doped $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ epitaxial films. Transfer length measurement (TLM) patterns were fabricated on the heavily Si-doped homoepitaxial $β$-Ga$_2$O$_3$ films with electron concentration (n) ranging from 1.77 to 3.23e20 cm^-3. Record low specific contact resistance and t…
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We report on the realization of record low resistance Ohmic contacts to MOVPE-grown heavily Si-doped $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ epitaxial films. Transfer length measurement (TLM) patterns were fabricated on the heavily Si-doped homoepitaxial $β$-Ga$_2$O$_3$ films with electron concentration (n) ranging from 1.77 to 3.23e20 cm^-3. Record low specific contact resistance and total contact resistance (Rc) of 1.62e-7 Ohm.cm^2 and 0.023 Ohm.mm were realized for $β$-Ga$_2$O$_3$: Si films with n > 3e20 cm^-3. TLM structures were also fabricated on heavily Si doped coherently strained $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ (x=12%, 17% and 22%) films. The film with 12% Al composition (n=1.23e20 cm^-3) showed \r{ho}c of 5.85e-6 Ohm.cm^2, but it increased to 2.19e-4 Ohm.cm^2 for a layer with a 22% Al composition. Annealing the samples post metal deposition has generally led to a decrease in contact resistance, but for high Al content $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$, the contact resistance did not change significantly after the annealing process. The low contact resistance values measured in this work are very promising for the fabrication of high frequency power devices.
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Submitted 3 August, 2022;
originally announced August 2022.
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4.4 kV $β$-Ga$_2$O$_3$ Power MESFETs with Lateral Figure of Merit exceeding 100 MW/cm$^2$
Authors:
Arkka Bhattacharyya,
Shivam Sharma,
Fikadu Alema,
Praneeth Ranga,
Saurav Roy,
Carl Peterson,
George Seryogin,
Andrei Osinsky,
Uttam Singisetti,
Sriram Krishnamoorthy
Abstract:
Field-plated (FP) depletion-mode MOVPE-grown $β$-Ga$_2$O$_3$ lateral MESFETs are realized with superior reverse breakdown voltages and ON currents. A sandwiched SiN$_x$ dielectric field plate design was utilized that prevents etching-related damage in the active region and a deep mesa-etching was used to reduce reverse leakage. The device with L$_{GD}$ = 34.5 $μ$m exhibits an ON current (I…
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Field-plated (FP) depletion-mode MOVPE-grown $β$-Ga$_2$O$_3$ lateral MESFETs are realized with superior reverse breakdown voltages and ON currents. A sandwiched SiN$_x$ dielectric field plate design was utilized that prevents etching-related damage in the active region and a deep mesa-etching was used to reduce reverse leakage. The device with L$_{GD}$ = 34.5 $μ$m exhibits an ON current (I$_{DMAX}$) of 56 mA/mm, a high I$_{ON}$/I$_{OFF}$ ratio $>$ 10$^8$ and a very low reverse leakage until catastrophic breakdown at $\sim$ 4.4kV. The highest measurable V$_{BR}$ recorded was 4.57 kV (L$_{GD}$ = 44.5 $μ$m). An LFOM of 132 MW/cm$^2$ was calculated for a V$_{BR}$ of $\sim$ 4.4 kV. The reported results are the first $>$ 4kV-class Ga$_2$O$_3$ transistors to surpass the theoretical FOM of Silicon. These are also the highest I$_{DMAX}$ and lowest R$_{ON}$ values achieved simultaneously for any $β$-Ga$_2$O$_3$ device with V$_{BR}$ $>$ 4kV to date. This work highlights that high breakdown voltages (V$_{BR}$), high lateral figure of merit (LFOM) and high ON currents can be achieved simultaneously in $β$-Ga$_2$O$_3$ lateral transistors.
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Submitted 24 January, 2022;
originally announced January 2022.
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Collision fragmentation of aggregates. The role of the interaction potential between comprising particles
Authors:
Alexander Osinsky,
Nikolai Brilliantov
Abstract:
We investigate disruptive collisions of aggregates comprised of particles with different interaction potentials. We study Lennard-Jones (L-J), Tersoff, modified L-J potential and the one associated with Johnson-Kendall-Roberts (JKR) model. These refer to short, middle and long-ranged inter-particle potentials and describe both inter-atomic interactions and interactions of macroscopic adhesive bodi…
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We investigate disruptive collisions of aggregates comprised of particles with different interaction potentials. We study Lennard-Jones (L-J), Tersoff, modified L-J potential and the one associated with Johnson-Kendall-Roberts (JKR) model. These refer to short, middle and long-ranged inter-particle potentials and describe both inter-atomic interactions and interactions of macroscopic adhesive bodies. We perform comprehensive molecular dynamics simulations and observe for all four potentials power-law dependencies for the size distribution of collision fragments and for their size-velocity correlation. We introduce a new fragmentation characteristic -- the shattering degree $S$, quantifying the fraction of monomers in debris and reveal its universal behavior. Namely, we demonstrate that for all potentials, $1-S$ is described by a universal function of the impact velocity. Using the above results, we perform the impact classification and construct the respective collision phase diagram. Finally, we present a qualitative theory that explains the observed scaling behavior.
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Submitted 30 October, 2021; v1 submitted 13 October, 2021;
originally announced October 2021.
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Anomalous aggregation regimes of temperature-dependent Smoluchowski equations
Authors:
A. I. Osinsky,
N. V. Brilliantov
Abstract:
Temperature-dependent Smoluchowski equations describe the ballistic agglomeration. In contrast to the standard Smoluchowski equations for the evolution of cluster densities with constant rate coefficients, the temperature-dependent equations describe both -- the evolution of the densities as well as cluster temperatures, which determine the aggregation rates. To solve these equations, we develop a…
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Temperature-dependent Smoluchowski equations describe the ballistic agglomeration. In contrast to the standard Smoluchowski equations for the evolution of cluster densities with constant rate coefficients, the temperature-dependent equations describe both -- the evolution of the densities as well as cluster temperatures, which determine the aggregation rates. To solve these equations, we develop a novel Monte Carlo technique based on the low-rank approximation for the aggregation kernel. Using this highly effective approach, we perform a comprehensive study of the phase diagram of the system and reveal a few surprising regimes, including permanent temperature growth and "density separation", with a large gap in the size distribution for middle-size clusters. We perform classification of the aggregation kernels for the temperature-dependent equations and conjecture the lack of gelation. The results of our scaling analysis agree well with the simulation data.
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Submitted 1 October, 2021;
originally announced October 2021.
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Multi-kV class $β$-Ga$_2$O$_3$ MESFETs with a Lateral Figure of Merit up to 355 MW/cm$^2$
Authors:
Arkka Bhattacharyya,
Praneeth Ranga,
Saurav Roy,
Carl Peterson,
Fikadu Alema,
George Seryogin,
Andrei Osinsky,
Sriram Krishnamoorthy
Abstract:
We demonstrate over 3 kV gate-pad-connected field plated (GPFP) $β$-Ga$_2$O$_3$ lateral MESFETs with high lateral figure of merit (LFOM) using metalorganic vapor phase epitaxy (MOVPE) grown channel layers and regrown ohmic contact layers. Using an improved low-temperature MOVPE selective area epitaxy process, we show that a total contact resistance to the channel as low as 1.4 $Ω$.mm can be achiev…
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We demonstrate over 3 kV gate-pad-connected field plated (GPFP) $β$-Ga$_2$O$_3$ lateral MESFETs with high lateral figure of merit (LFOM) using metalorganic vapor phase epitaxy (MOVPE) grown channel layers and regrown ohmic contact layers. Using an improved low-temperature MOVPE selective area epitaxy process, we show that a total contact resistance to the channel as low as 1.4 $Ω$.mm can be achieved.The GPFP design adopted here using PECVD (plasma-enhanced chemical vapor deposition) deposited SiN$_x$ dielectric and SiN$_x$/SiO$_2$ wrap-around passivation exhibits up to ~14% improved R$_{ON}$, up to ~70% improved breakdown voltage (V$_{BR}$ = V$_{DS}$ - V$_{GS}$) resulting in up to $\sim$3$\times$ higher LFOM compared to non-FP $β$-Ga$_2$O$_3$ lateral MESFETs. The V$_{BR}$ (~2.5 kV) and LFOM (355 MW/cm$^2$) measured simultaneously in our GPFP $β$-Ga$_2$O$_3$ lateral MESFET (with L$_{GD}$ = 10 $μ$m) is the highest value achieved in any depletion-mode $β$-Ga$_2$O$_3$ lateral device.
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Submitted 26 July, 2021; v1 submitted 11 June, 2021;
originally announced June 2021.
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Direct simulation Monte Carlo for new regimes in aggregation-fragmentation kinetics
Authors:
A. Kalinov,
A. I. Osinsky,
S. A. Matveev,
W. Otieno,
N. V. Brilliantov
Abstract:
We revisit two basic Direct Simulation Monte Carlo Methods to model aggregation kinetics and extend them for aggregation processes with collisional fragmentation (shattering). We test the performance and accuracy of the extended methods and compare their performance with efficient deterministic finite-difference method applied to the same model. We validate the stochastic methods on the test probl…
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We revisit two basic Direct Simulation Monte Carlo Methods to model aggregation kinetics and extend them for aggregation processes with collisional fragmentation (shattering). We test the performance and accuracy of the extended methods and compare their performance with efficient deterministic finite-difference method applied to the same model. We validate the stochastic methods on the test problems and apply them to verify the existence of oscillating regimes in the aggregation-fragmentation kinetics recently detected in deterministic simulations. We confirm the emergence of steady oscillations of densities in such systems and prove the stability of the oscillations with respect to fluctuations and noise.
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Submitted 25 April, 2021; v1 submitted 17 March, 2021;
originally announced March 2021.
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The role of energy in ballistic agglomeration
Authors:
N. V. Brilliantov,
A. I. Osinsky,
P. L. Krapivsky
Abstract:
We study a ballistic agglomeration process in the reaction-controlled limit. Cluster densities obey an infinite set of Smoluchowski rate equations, with rates dependent on the average particle energy. The latter is the same for all cluster species in the reaction-controlled limit and obeys an equation depending on densities. We express the average energy through the total cluster density that allo…
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We study a ballistic agglomeration process in the reaction-controlled limit. Cluster densities obey an infinite set of Smoluchowski rate equations, with rates dependent on the average particle energy. The latter is the same for all cluster species in the reaction-controlled limit and obeys an equation depending on densities. We express the average energy through the total cluster density that allows us to reduce the governing equations to the standard Smoluchowski equations. We derive basic asymptotic behaviors and verify them numerically. We also apply our formalism to the agglomeration of dark matter.
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Submitted 2 October, 2020;
originally announced October 2020.
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High Performance Interference Suppression in Multi-User Massive MIMO Detector
Authors:
Andrey Ivanov,
Alexander Osinsky,
Dmitry Lakontsev,
Dmitry Yarotsky
Abstract:
In this paper, we propose a new nonlinear detector with improved interference suppression in Multi-User Multiple Input, Multiple Output (MU-MIMO) system. The proposed detector is a combination of the following parts: QR decomposition (QRD), low complexity users sorting before QRD, sorting-reduced (SR) K-best method and minimum mean square error (MMSE) pre-processing. Our method outperforms a linea…
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In this paper, we propose a new nonlinear detector with improved interference suppression in Multi-User Multiple Input, Multiple Output (MU-MIMO) system. The proposed detector is a combination of the following parts: QR decomposition (QRD), low complexity users sorting before QRD, sorting-reduced (SR) K-best method and minimum mean square error (MMSE) pre-processing. Our method outperforms a linear interference rejection combining (IRC, i.e. MMSE naturally) method significantly in both strong interference and additive white noise scenarios with both ideal and real channel estimations. This result has wide application importance for scenarios with strong interference, i.e. when co-located users utilize the internet in stadium, highway, shop** center, etc. Simulation results are presented for the non-line of sight 3D-UMa model of 5G QuaDRiGa 2.0 channel for 16 highly correlated single-antenna users with QAM16 modulation in 64 antennas of Massive MIMO system. The performance was compared with MMSE and other detection approaches.
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Submitted 20 March, 2020;
originally announced May 2020.
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Data-Aided LS Channel Estimation in Massive MIMO Turbo-Receiver
Authors:
Alexander Osinsky,
Andrey Ivanov,
Dmitry Lakontsev,
Roman Bychkov,
Dmitry Yarotsky
Abstract:
In this paper, we propose a new algorithm of iterative least squared (LS) channel estimation for 64 antennas Massive Multiple Input, Multiple Output (MIMO) turbo-receiver. The algorithm employs log-likelihood ratios (LLR) of low-density parity-check (LDPC) decoder and minimum mean square error (MMSE) estimator to achieve soft data symbols. These soft data symbols are further MMSE-weighted again an…
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In this paper, we propose a new algorithm of iterative least squared (LS) channel estimation for 64 antennas Massive Multiple Input, Multiple Output (MIMO) turbo-receiver. The algorithm employs log-likelihood ratios (LLR) of low-density parity-check (LDPC) decoder and minimum mean square error (MMSE) estimator to achieve soft data symbols. These soft data symbols are further MMSE-weighted again and combined with pilot symbols to achieve a modified LS channel estimate. The modified LS estimate is employed by the same channel estimation unit to enhance turbo-receiver performance via channel re-estimation, as a result, the proposed approach has low complexity and fits any channel estimation solution, which is quite valuable in practice. We analyze both hard and soft algorithm versions and present simulation results of 5G turbo-receiver in the 3D-UMa model of the QuaDRiGa 2.0 channel. Simulation results demonstrate up to 0.3dB performance gain compared to the unweighted hard data symbols utilization in the LS channel re-calculation.
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Submitted 20 March, 2020;
originally announced March 2020.
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Size-polydisperse dust in molecular gas: Energy equipartition versus non-equipartition
Authors:
Alexander Osinsky,
Anna S. Bodrova,
Nikolai V. Brilliantov
Abstract:
We investigate numerically and analytically size-polydisperse granular mixtures immersed into a molecular gas. We show that the equipartition of granular temperatures of particles of different sizes is established; however, the granular temperatures significantly differ from the temperature of the molecular gas. This result is surprising since, generally, the energy equipartition is strongly viola…
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We investigate numerically and analytically size-polydisperse granular mixtures immersed into a molecular gas. We show that the equipartition of granular temperatures of particles of different sizes is established; however, the granular temperatures significantly differ from the temperature of the molecular gas. This result is surprising since, generally, the energy equipartition is strongly violated in driven granular mixtures. Qualitatively, the obtained results do not depend on the collision model, being valid for a constant restitution coefficient $\varepsilon$, as well as for the $\varepsilon$ for viscoelastic particles. Our findings may be important for astrophysical applications, such as protoplanetary disks, interstellar dust clouds, and comets.
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Submitted 26 February, 2020;
originally announced February 2020.
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Theoretical Performance Bound of Uplink Channel Estimation Accuracy in Massive MIMO
Authors:
Alexander Osinsky,
Andrey Ivanov,
Dmitry Yarotsky
Abstract:
In this paper, we present a new performance bound for uplink channel estimation (CE) accuracy in the Massive Multiple Input Multiple Output (MIMO) system. The proposed approach is based on noise power prediction after the CE unit. Our method outperforms the accuracy of a well-known Cramer-Rao lower bound (CRLB) due to considering more statistics since performance strongly depends on a number of ch…
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In this paper, we present a new performance bound for uplink channel estimation (CE) accuracy in the Massive Multiple Input Multiple Output (MIMO) system. The proposed approach is based on noise power prediction after the CE unit. Our method outperforms the accuracy of a well-known Cramer-Rao lower bound (CRLB) due to considering more statistics since performance strongly depends on a number of channel taps and power ratio between them. Simulation results are presented for the non-line of sight (NLOS) 3D-UMa model of 5G QuaDRiGa 2.0 channel and compared with CRLB and state-of-the-art CE algorithms.
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Submitted 21 February, 2020;
originally announced February 2020.
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Temperature distribution in driven granular mixtures does not depend on mechanism of energy dissipation
Authors:
Anna S. Bodrova,
Alexander Osinsky,
Nikolay Brilliantov
Abstract:
We study analytically and numerically the distribution of granular temperatures in granular mixtures for different dissipation mechanisms of inelastic inter-particle collisions. Both driven and force-free systems are analyzed. We demonstrate that the simplified model of a constant restitution coefficient fails to predict even qualitatively a granular temperature distribution in a homogeneous cooli…
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We study analytically and numerically the distribution of granular temperatures in granular mixtures for different dissipation mechanisms of inelastic inter-particle collisions. Both driven and force-free systems are analyzed. We demonstrate that the simplified model of a constant restitution coefficient fails to predict even qualitatively a granular temperature distribution in a homogeneous cooling state. At the same time we reveal for driven systems a stunning result -- the distribution of temperatures in granular mixtures is universal. That is, it does not depend on a particular dissipation mechanism of inter-particles collisions, provided the size distributions of particles is steep enough. The results of the analytic theory are compared with simulation results obtained by the direct simulation Monte Carlo (DSMC). The agreement between the theory and simulations is perfect. The reported results may have important consequences for fundamental science as well as for numerous application, e.g. for the experimental modelling in a lab of natural processes.
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Submitted 12 November, 2019;
originally announced November 2019.
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Rectangular maximum volume and projective volume search algorithms
Authors:
Alexander Osinsky
Abstract:
New methods for finding submatrices of (locally) maximal volume and large projective volume are proposed and studied. Detailed analysis is also carried out for existing methods. The effectiveness of the new methods is shown in the construction of cross approximations, and estimates are also proved in the case of their application for the search for a strongly nondegenerate submatrix. Much attentio…
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New methods for finding submatrices of (locally) maximal volume and large projective volume are proposed and studied. Detailed analysis is also carried out for existing methods. The effectiveness of the new methods is shown in the construction of cross approximations, and estimates are also proved in the case of their application for the search for a strongly nondegenerate submatrix. Much attention is also paid to the choice of the starting submatrix.
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Submitted 11 April, 2019; v1 submitted 7 September, 2018;
originally announced September 2018.
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Probabilistic estimation of the rank 1 cross approximation accuracy
Authors:
Alexander Osinsky
Abstract:
In the construction of low-rank matrix approximation and maximum element search it is effective to use maxvol algorithm. Nevertheless, even in the case of rank 1 approximation the algorithm does not always converge to the maximum matrix element, and it is unclear how often close to the maximum element can be found. In this article it is shown that with a certain degree of randomness in the matrix…
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In the construction of low-rank matrix approximation and maximum element search it is effective to use maxvol algorithm. Nevertheless, even in the case of rank 1 approximation the algorithm does not always converge to the maximum matrix element, and it is unclear how often close to the maximum element can be found. In this article it is shown that with a certain degree of randomness in the matrix and proper selection of the starting column, the algorithm with high probability in a few steps converges to an element, which module differs little from the maximum. It is also shown that with more severe restrictions on the error matrix no restrictions on the starting column need to be introduced.
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Submitted 30 June, 2017;
originally announced June 2017.
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Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors
Authors:
David A. Deen,
Ross Miller,
Andrei Osinsky,
Brian P. Downey,
David F. Storm,
David J. Meyer,
D. Scott Katzer,
Neeraj Nepal
Abstract:
A dual-channel AlN/GaN/AlN/GaN high electron mobility transistor (HEMT) architecture is proposed, simulated, and demonstrated that suppresses gate lag due to surface-originated trapped charge. Dual two-dimensional electron gas (2DEG) channels are utilized such that the top 2DEG serves as an equipotential that screens potential fluctuations resulting from surface trapped charge. The bottom channel…
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A dual-channel AlN/GaN/AlN/GaN high electron mobility transistor (HEMT) architecture is proposed, simulated, and demonstrated that suppresses gate lag due to surface-originated trapped charge. Dual two-dimensional electron gas (2DEG) channels are utilized such that the top 2DEG serves as an equipotential that screens potential fluctuations resulting from surface trapped charge. The bottom channel serves as the transistor's modulated channel. Two device modeling approaches have been performed as a means to guide the device design and to elucidate the relationship between the design and performance metrics. The modeling efforts include a self-consistent Poisson-Schrodinger solution for electrostatic simulation as well as hydrodynamic three-dimensional device modeling for three-dimensional electrostatics, steady-state, and transient simulations. Experimental results validated the HEMT design whereby homo-epitaxial growth on free-standing GaN substrates and fabrication of same-wafer dual-channel and recessed-gate AlN/GaN HEMTs have been demonstrated. Notable pulsed-gate performance has been achieved by the fabricated HEMTs through a gate lag ratio of 0.86 with minimal drain current collapse while maintaining high levels of dc and rf performance.
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Submitted 12 October, 2016;
originally announced October 2016.
