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Impact of measurement backaction on nuclear spin qubits in silicon
Authors:
S. Monir,
E. N. Osika,
S. K. Gorman,
I. Thorvaldson,
Y. -L. Hsueh,
P. Macha,
L. Kranz,
J. Reiner,
M. Y. Simmons,
R. Rahman
Abstract:
Phosphorus donor nuclear spins in silicon couple weakly to the environment making them promising candidates for high-fidelity qubits. The state of a donor nuclear spin qubit can be manipulated and read out using its hyperfine interaction with the electron confined by the donor potential. Here we use a master equation-based approach to investigate how the backaction from this electron-mediated meas…
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Phosphorus donor nuclear spins in silicon couple weakly to the environment making them promising candidates for high-fidelity qubits. The state of a donor nuclear spin qubit can be manipulated and read out using its hyperfine interaction with the electron confined by the donor potential. Here we use a master equation-based approach to investigate how the backaction from this electron-mediated measurement affects the lifetimes of single and multi-donor qubits. We analyze this process as a function of electric and magnetic fields, and hyperfine interaction strength. Apart from single nuclear spin flips, we identify an additional measurement-related mechanism, the nuclear spin flip-flop, which is specific to multi-donor qubits. Although this flip-flop mechanism reduces qubit lifetimes, we show that it can be effectively suppressed by the hyperfine Stark shift. We show that using atomic precision donor placement and engineered Stark shift, we can minimize the measurement backaction in multi-donor qubits, achieving larger nuclear spin lifetimes than single donor qubits.
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Submitted 19 October, 2023;
originally announced October 2023.
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Superexchange coupling of donor qubits in silicon
Authors:
Mushita M. Munia,
Serajum Monir,
Edyta N. Osika,
Michelle Y. Simmons,
Rajib Rahman
Abstract:
Atomic engineering in a solid-state material has the potential to functionalize the host with novel phenomena. STM-based lithographic techniques have enabled the placement of individual phosphorus atoms at selective lattice sites of silicon with atomic precision. Here, we show that by placing four phosphorus donors spaced 10-15 nm apart from their neighbours in a linear chain, it is possible to re…
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Atomic engineering in a solid-state material has the potential to functionalize the host with novel phenomena. STM-based lithographic techniques have enabled the placement of individual phosphorus atoms at selective lattice sites of silicon with atomic precision. Here, we show that by placing four phosphorus donors spaced 10-15 nm apart from their neighbours in a linear chain, it is possible to realize coherent spin coupling between the end dopants of the chain, analogous to the superexchange interaction in magnetic materials. Since phosphorus atoms are a promising building block of a silicon quantum computer, this enables spin coupling between their bound electrons beyond nearest neighbours, allowing the qubits to be spaced out by 30-45 nm. The added flexibility in architecture brought about by this long-range coupling not only reduces gate densities but can also reduce correlated noise between qubits from local noise sources that are detrimental to error correction codes. We base our calculations on a full configuration interaction technique in the atomistic tight-binding basis, solving the 4-electron problem exactly, over a domain of a million silicon atoms. Our calculations show that superexchange can be tuned electrically through gate voltages where it is less sensitive to charge noise and donor placement errors.
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Submitted 1 September, 2023;
originally announced September 2023.
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Spin-photon coupling for atomic qubit devices in silicon
Authors:
Edyta N. Osika,
Sacha Kocsis,
Yu-Ling Hsueh,
Serajum Monir,
Cassandra Chua,
Hubert Lam,
Benoit Voisin,
Sven Rogge,
Rajib Rahman
Abstract:
Electrically addressing spin systems is predicted to be a key component in develo** scalable semiconductor-based quantum processing architectures, to enable fast spin qubit manipulation and long-distance entanglement via microwave photons. However, single spins have no electric dipole, and therefore a spin-orbit mechanism must be integrated in the qubit design. Here, we propose to couple microwa…
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Electrically addressing spin systems is predicted to be a key component in develo** scalable semiconductor-based quantum processing architectures, to enable fast spin qubit manipulation and long-distance entanglement via microwave photons. However, single spins have no electric dipole, and therefore a spin-orbit mechanism must be integrated in the qubit design. Here, we propose to couple microwave photons to atomically precise donor spin qubit devices in silicon using the hyperfine interaction intrinsic to donor systems and an electrically-induced spin-orbit coupling. We characterise a one-electron system bound to a tunnel-coupled donor pair (1P-1P) using the tight-binding method, and then estimate the spin-photon coupling achievable under realistic assumptions. We address the recent experiments on double quantum dots (DQDs) in silicon and indicate the differences between DQD and 1P-1P systems. Our analysis shows that it is possible to achieve strong spin-photon coupling in 1P-1P systems in realistic device conditions without the need for an external magnetic field gradient.
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Submitted 6 May, 2021;
originally announced May 2021.
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Spin-valley resolved photon-assisted tunneling in carbon nanotube double quantum dots
Authors:
E. N. Osika,
B. Szafran
Abstract:
We consider the photon-assisted tunneling (PAT) and the Landau-Zener-Stueckelberg (LZS) interference for double quantum dots induced electrostatically along a semiconducting carbon nanotube. An atomistic tight-binding approach and the time-dependent configuration interaction method are employed for description of the systems of a few confined electrons and holes. We reproduce the patterns of the L…
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We consider the photon-assisted tunneling (PAT) and the Landau-Zener-Stueckelberg (LZS) interference for double quantum dots induced electrostatically along a semiconducting carbon nanotube. An atomistic tight-binding approach and the time-dependent configuration interaction method are employed for description of the systems of a few confined electrons and holes. We reproduce the patterns of the LZS interference recently observed for the quantum double dots describing transport across hole-localized states. Moreover, we indicate that for charge configurations for which the ground-state is Pauli blocked PAT can be used for resolution of the transitions that involve spin-flip or intervalley transitions without the spin-valley conserving background signal.
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Submitted 28 February, 2017;
originally announced February 2017.
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Spin-valley dynamics of electrically driven ambipolar carbon-nanotube quantum dots
Authors:
E. N. Osika,
A. Chacón,
M. Lewenstein,
B. Szafran
Abstract:
An ambipolar $n$-$p$ double quantum dot defined by potential variation along a semiconducting carbon-nanotube is considered. We focus on the (1e,1h) charge configuration with a single excess electron in the conduction band state confined in the $n$-type dot and a single missing electron in the valence band state of the $p$-dot for which lifting of the Pauli blockade of the current was observed in…
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An ambipolar $n$-$p$ double quantum dot defined by potential variation along a semiconducting carbon-nanotube is considered. We focus on the (1e,1h) charge configuration with a single excess electron in the conduction band state confined in the $n$-type dot and a single missing electron in the valence band state of the $p$-dot for which lifting of the Pauli blockade of the current was observed in the electric-dipole spin resonance [E. A. Laird et al. Nat. Nanotech. 8 , 565 (2013)]. The dynamics of the system driven by periodic electric field is studied with the Floquet theory and the time-dependent configuration interaction method with the single-electron spin-valley-orbitals determined for atomistic tight-binding Hamiltonian. We find that the transitions lifting the Pauli blockade are strongly influenced by coupling to a vacuum state with an empty $n$ dot and a fully filled $p$ dot. The coupling shifts the transition energies and strongly modifies the effective $g$ factors for axial magnetic field. The coupling is modulated by the bias between the dots but it appears effective for surprisingly large energy splitting between the (1e,1h) ground state and the vacuum (0e,0h) state. Multiphoton transitions and high harmonic generation effects are also discussed.
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Submitted 7 November, 2016;
originally announced November 2016.
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Wannier-Bloch approach to localization in high harmonics generation in solids
Authors:
Edyta N. Osika,
Alexis Chacón,
Lisa Ortmann,
Noslen Suárez,
Jose Antonio Pérez-Hernández,
Bartłomiej Szafran,
Marcelo F. Ciappina,
Fernando Sols,
Alexandra S. Landsman,
Maciej Lewenstein
Abstract:
Emission of high-order harmonics from solids provides a new avenue in attosecond science. On one hand, it allows to investigate fundamental processes of the non-linear response of electrons driven by a strong laser pulse in a periodic crystal lattice. On the other hand, it opens new paths toward efficient attosecond pulse generation, novel imaging of electronic wave functions, and enhancement of h…
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Emission of high-order harmonics from solids provides a new avenue in attosecond science. On one hand, it allows to investigate fundamental processes of the non-linear response of electrons driven by a strong laser pulse in a periodic crystal lattice. On the other hand, it opens new paths toward efficient attosecond pulse generation, novel imaging of electronic wave functions, and enhancement of high-order harmonic generation (HHG) intensity. A key feature of HHG in a solid (as compared to the well-understood phenomena of HHG in an atomic gas) is the delocalization of the process, whereby an electron ionized from one site in the periodic lattice may recombine with any other. Here, we develop an analytic model, based on the localized Wannier wave functions in the valence band and delocalized Bloch functions in the conduction band. This Wannier-Bloch approach assesses the contributions of individual lattice sites to the HHG process, and hence addresses precisely the question of localization of harmonic emission in solids. We apply this model to investigate HHG in a ZnO crystal for two different orientations, corresponding to wider and narrower valence and conduction bands, respectively. Interestingly, for narrower bands, the HHG process shows significant localization, similar to harmonic generation in atoms. For all cases, the delocalized contributions to HHG emission are highest near the band-gap energy. Our results pave the way to controlling localized contributions to HHG in a solid crystal, with hard to overestimate implications for the emerging area of atto-nanoscience.
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Submitted 26 July, 2016;
originally announced July 2016.
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Electronic structure of (1e,1h) states of carbon nanotube quantum dots
Authors:
E. N. Osika,
B. Szafran
Abstract:
We provide an atomistic tight-binding description of a few carriers confined in ambipolar (n-p) double quantum dots defined in a semiconducting carbon nanotube. We focus our attention on the charge state of the system in which Pauli blockade of the current flow is observed [F. Pei et al., Nat. Nanotechnol. 7, 630 (2012); E. A. Laird et al., ibid 8, 565 (2013)] with a single excess electron in the…
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We provide an atomistic tight-binding description of a few carriers confined in ambipolar (n-p) double quantum dots defined in a semiconducting carbon nanotube. We focus our attention on the charge state of the system in which Pauli blockade of the current flow is observed [F. Pei et al., Nat. Nanotechnol. 7, 630 (2012); E. A. Laird et al., ibid 8, 565 (2013)] with a single excess electron in the n-dot and a single hole in the p-dot. We use the configuration interaction approach to determine the spin-valley structure of the states near the neutrality point and discuss its consequences for the interdot exchange interaction, the degeneracy of the energy spectrum and the symmetry of the confined states. We calculate the transition energies lifting the Pauli blockade and analyze their dependence on the magnetic field vector. Furthermore, we introduce bending of the nanotube and demonstrate its influence on the transition energy spectra. The best qualitative agreement with the experimental data is observed for nanotubes deflected in the gated areas in which the carrier confinement is induced.
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Submitted 12 April, 2016;
originally announced April 2016.
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Spin-orbit interaction in bent carbon nanotubes: resonant spin transitions
Authors:
E. N. Osika,
B. Szafran
Abstract:
We develop an effective tight-binding Hamiltonian for spin-orbit (SO) interaction in bent carbon nanotubes (CNT) for the electrons forming the $π$ bonds between the nearest neighbor atoms. We account for the bend of the CNT and the intrinsic spin-orbit interaction which introduce mixing of $π$ and $σ$ bonds between the $p_z$ orbitals along the CNT. The effect contributes to the main origin of the…
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We develop an effective tight-binding Hamiltonian for spin-orbit (SO) interaction in bent carbon nanotubes (CNT) for the electrons forming the $π$ bonds between the nearest neighbor atoms. We account for the bend of the CNT and the intrinsic spin-orbit interaction which introduce mixing of $π$ and $σ$ bonds between the $p_z$ orbitals along the CNT. The effect contributes to the main origin of the SO coupling--the folding of the graphene plane into the nanotube. We discuss the bend-related contribution of the SO coupling for resonant single-electron spin and charge transitions in a double quantum dot. We report that although the effect of the bend-related SO coupling is weak for the energy spectra, it produces a pronounced increase of the spin transition rates driven by an external electric field. We find that spin-flip** transitions driven by alternate electric fields have usually larger rates when accompanied by charge shift from one dot to the other. Spin-flip** transition rates are non-monotonic functions of the driving amplitude since they are masked by stronger spin-conserving charge transitions. We demonstrate that the fractional resonances--counterparts of multiphoton transitions for atoms in strong laser fields--occurring in electrically controlled nanodevices already at moderate ac amplitudes--can be used to maintain the spin-flip transitions.
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Submitted 29 October, 2015; v1 submitted 26 March, 2015;
originally announced March 2015.
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Two-electron n-p double quantum dots in carbon nanotubes
Authors:
E. N. Osika,
B. Szafran
Abstract:
We consider electron states in n-p double quantum dots defined in a semiconducting carbon nanotube (CNT) by an external potential. We describe formation of extended single-electron orbitals originating from the conduction and valence bands confined in a minimum and a maximum of the external potential, respectively. We solve the problem of a confined electron pair using an exact diagonalization met…
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We consider electron states in n-p double quantum dots defined in a semiconducting carbon nanotube (CNT) by an external potential. We describe formation of extended single-electron orbitals originating from the conduction and valence bands confined in a minimum and a maximum of the external potential, respectively. We solve the problem of a confined electron pair using an exact diagonalization method within the tight-binding approach, which allows for a straightforward treatment of the conduction and valence band states, kee** an exact account for the intervalley scattering mediated by the atomic defects and the electron-electron interaction. The exchange interaction - which in the unipolar double dots is nearly independent of the axial magnetic field (B) and forms singlet-like and triplet-like states - in the n-p system appears only for selected states and narrow intervals of B. In particular the ground-state energy level of a n-p double dot is not split by the exchange interaction and remains four-fold degenerate at zero magnetic field also for a strong tunnel coupling between the dots.
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Submitted 9 February, 2015; v1 submitted 1 December, 2014;
originally announced December 2014.
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Tight-binding simulations of electrically driven spin-valley transitions in carbon nanotube quantum dots
Authors:
E. N. Osika,
A. Mreńca,
B. Szafran
Abstract:
We describe dynamics of spin and valley transitions driven by alternating electric fields in quantum dots defined electrostatically within semiconducting carbon nanotubes (CNT). We use the tight-binding approach to describe the states localized within a quantum dot taking into account the circumferential spin-orbit interaction due to the s-p hybridization and external fields. The basis of eigensta…
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We describe dynamics of spin and valley transitions driven by alternating electric fields in quantum dots defined electrostatically within semiconducting carbon nanotubes (CNT). We use the tight-binding approach to describe the states localized within a quantum dot taking into account the circumferential spin-orbit interaction due to the s-p hybridization and external fields. The basis of eigenstates localized in the quantum dot is used in the solution of the time-dependent Schroedinger equation for description of spin flips and inter-valley transitions that are driven by periodic perturbation in the presence of coupling between the spin, valley and orbital degrees of freedom. Besides the first order transitions we find also fractional resonances. We discuss the transition rates with selection rules that are lifted by atomic disorder and the bend of the tube. We demonstrate that the electric field component perpendicular to the axis of the CNT activates spin transitions which are otherwise absent and that the resonant spin-flip time scales with the inverse of the electric field.
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Submitted 3 September, 2014; v1 submitted 27 March, 2014;
originally announced March 2014.
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Simulations of electric-dipole spin resonance for spin-orbit-coupled quantum dots in Overhauser field: fractional resonances and selection rules
Authors:
E. N. Osika,
B. Szafran,
M. P. Nowak
Abstract:
We consider spin rotations in single- and two-electron quantum dots that are driven by external AC electric field with two mechanisms that couple the electron spatial motion and the spin degree of freedom: the spin-orbit interaction and a random fluctuation of the Overhauser field due to nuclear spin bath. We perform a systematic numerical simulation of the driven system using a finite difference…
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We consider spin rotations in single- and two-electron quantum dots that are driven by external AC electric field with two mechanisms that couple the electron spatial motion and the spin degree of freedom: the spin-orbit interaction and a random fluctuation of the Overhauser field due to nuclear spin bath. We perform a systematic numerical simulation of the driven system using a finite difference approach with an exact account taken for the electron-electron correlation. The simulation demonstrates that the electron oscillation in fluctuating nuclear field is translated into an effective magnetic field during the electron wave packet motion. The effective magnetic field drives the spin transitions according to the electric-dipole spin resonance mechanism. We find distinct signatures of selection rules for direct and higher-order transitions in terms of the spin-orbital symmetries of the wave functions. The selection rules are violated by the random fluctuation of the Overhauser field.
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Submitted 7 October, 2013;
originally announced October 2013.
