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A manufacturable platform for photonic quantum computing
Authors:
Koen Alexander,
Andrea Bahgat,
Avishai Benyamini,
Dylan Black,
Damien Bonneau,
Stanley Burgos,
Ben Burridge,
Geoff Campbell,
Gabriel Catalano,
Alex Ceballos,
Chia-Ming Chang,
CJ Chung,
Fariba Danesh,
Tom Dauer,
Michael Davis,
Eric Dudley,
** Er-Xuan,
Josep Fargas,
Alessandro Farsi,
Colleen Fenrich,
Jonathan Frazer,
Masaya Fukami,
Yogeeswaran Ganesan,
Gary Gibson,
Mercedes Gimeno-Segovia
, et al. (70 additional authors not shown)
Abstract:
Whilst holding great promise for low noise, ease of operation and networking, useful photonic quantum computing has been precluded by the need for beyond-state-of-the-art components, manufactured by the millions. Here we introduce a manufacturable platform for quantum computing with photons. We benchmark a set of monolithically-integrated silicon photonics-based modules to generate, manipulate, ne…
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Whilst holding great promise for low noise, ease of operation and networking, useful photonic quantum computing has been precluded by the need for beyond-state-of-the-art components, manufactured by the millions. Here we introduce a manufacturable platform for quantum computing with photons. We benchmark a set of monolithically-integrated silicon photonics-based modules to generate, manipulate, network, and detect photonic qubits, demonstrating dual-rail photonic qubits with $99.98\% \pm 0.01\%$ state preparation and measurement fidelity, Hong-Ou-Mandel quantum interference between independent photon sources with $99.50\%\pm0.25\%$ visibility, two-qubit fusion with $99.22\%\pm0.12\%$ fidelity, and a chip-to-chip qubit interconnect with $99.72\%\pm0.04\%$ fidelity, not accounting for loss. In addition, we preview a selection of next generation technologies, demonstrating low-loss silicon nitride waveguides and components, fabrication-tolerant photon sources, high-efficiency photon-number-resolving detectors, low-loss chip-to-fiber coupling, and barium titanate electro-optic phase shifters.
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Submitted 26 April, 2024;
originally announced April 2024.
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Magnetoresistance oscillation study of the half-quantum vortex in doubly connected mesoscopic superconducting cylinders of Sr2RuO4
Authors:
Xinxin Cai,
Brian M. Zakrzewski,
Yiqun A. Ying,
Hae-Young Kee,
Manfred Sigrist,
J. Elliott Ortmann,
Weifeng Sun,
Zhiqiang Mao,
Ying Liu
Abstract:
The observation of the highly unusual half-quantum vortex (HQV) in a single crystalline superconductor excludes unequivocally the spin-singlet symmetry of the superconducting order parameter. HQVs were observed previously in mesoscopic samples of Sr2RuO4 in cantilever torque magnetometry measurements, thus providing direct evidence for spin-triplet pairing in the material. In addition, it raised i…
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The observation of the highly unusual half-quantum vortex (HQV) in a single crystalline superconductor excludes unequivocally the spin-singlet symmetry of the superconducting order parameter. HQVs were observed previously in mesoscopic samples of Sr2RuO4 in cantilever torque magnetometry measurements, thus providing direct evidence for spin-triplet pairing in the material. In addition, it raised important questions on HQV, including its stability and dynamics. These issues have remained largely unexplored, in particular, experimentally. We report in this paper the detection of HQVs in mesoscopic, doubly connected cylinders of single-crystalline Sr2RuO4 of a mesoscopic size and the examination of the effect of the in-plane magnetic field needed for the observation of the HQV by magnetoresistance (MR) oscillations measurements. Several distinct features found in our data, especially a dip and secondary peaks in the MR oscillations seen only in the presence of a sufficiently large in-plane magnetic field as well as a large measurement current, are linked to the formation of the HQV fluxoid state in and crossing of an Abrikosov HQV through the sample. The conclusion is drawn from the analysis of our data using a model of thermally activated vortex crossing overcoming a free-energy barrier which is modulated by the applied magnetic flux enclosed in the cylinder as well as the measurement current. Evidence for the trap** of an HQV fluxoid state in the sample was also found. Our observation of the HQV in mesoscopic Sr2RuO4 provided not only additional evidence for spin-triplet superconductivity in Sr2RuO4 but also insights into the physics of HQV, including its spontaneous spin polarization, stability, and dynamics. Our study also revealed a possible effect of the measurement current on the magnitude of the spontaneous spin polarization associated with the HQV.
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Submitted 29 October, 2020;
originally announced October 2020.
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Ultra-Low-Power Tuning in Hybrid Barium Titanate-Silicon Nitride Electro-Optic Devices on Silicon
Authors:
J. Elliott Ortmann,
Felix Eltes,
Daniele Caimi,
Norbert Meier,
Alexander A. Demkov,
Lukas Czornomaz,
Jean Fompeyrine,
Stefan Abel
Abstract:
As the optical analogue to integrated electronics, integrated photonics has already found widespread use in data centers in the form of optical interconnects. As global network traffic continues its rapid expansion, the power consumption of such circuits becomes a critical consideration. Electrically tunable devices in photonic integrated circuits contribute significantly to the total power budget…
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As the optical analogue to integrated electronics, integrated photonics has already found widespread use in data centers in the form of optical interconnects. As global network traffic continues its rapid expansion, the power consumption of such circuits becomes a critical consideration. Electrically tunable devices in photonic integrated circuits contribute significantly to the total power budget, as they traditionally rely on inherently power-consuming phenomena such as the plasma dispersion effect or the thermo-optic effect for operation. Here, we demonstrate ultra-low-power refractive index tuning in a hybrid barium titanate (BTO)-silicon nitride (SiN) platform integrated on silicon. We achieve tuning by exploiting the large electric field-driven Pockels effect in ferroelectric BTO thin films of sub-100 nm thickness. The extrapolated power consumption for tuning a free spectral range (FSR) in racetrack resonator devices is only 106 nW/FSR, several orders of magnitude less than many previous reports. We demonstrate the technological potential of our hybrid BTO-SiN technology by compensating thermally induced refractive index variations over a temperature range of 20 °C and by using our platform to fabricate tunable multiresonator optical filters. Our hybrid BTO-SiN technology significantly advances the field of ultra-low-power integrated photonic devices and allows for the realization of next-generation efficient photonic circuits for use in a variety of fields, including communications, sensing, and computing.
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Submitted 26 November, 2019;
originally announced December 2019.
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A BaTiO3-Based Electro-Optic Pockels Modulator Monolithically Integrated on an Advanced Silicon Photonics Platform
Authors:
Felix Eltes,
Christian Mai,
Daniele Caimi,
Marcel Kroh,
Youri Popoff,
Georg Winzer,
Despoina Petousi,
Stefan Lischke,
J. Elliott Ortmann,
Lukas Czornomaz,
Lars Zimmermann,
Jean Fompeyrine,
Stefan Abel
Abstract:
To develop a new generation of high-speed photonic modulators on silicon-technology-based photonics, new materials with large Pockels coefficients have been transferred to silicon substrates. Previous approaches focus on realizing stand-alone devices on dedicated silicon substrates, incompatible with the fabrication process in silicon foundries. In this work, we demonstrate monolithic integration…
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To develop a new generation of high-speed photonic modulators on silicon-technology-based photonics, new materials with large Pockels coefficients have been transferred to silicon substrates. Previous approaches focus on realizing stand-alone devices on dedicated silicon substrates, incompatible with the fabrication process in silicon foundries. In this work, we demonstrate monolithic integration of electro-optic modulators based on the Pockels effect in barium titanate (BTO) thin films into the back-end-of-line of a photonic integrated circuit (PIC) platform. Molecular wafer bonding allows fully PIC-compatible integration of BTO-based devices and is, as shown, scalable to 200 mm wafers. The PIC-integrated BTO Mach-Zehnder modulators outperform conventional Si photonic modulators in modulation efficiency, losses, and static tuning power. The devices show excellent VπL (0.2 Vcm) and VπLα (1.3 VdB), work at high speed (25 Gbps), and can be tuned at low static power consumption (100 nW). Our concept demonstrates the possibility of monolithic integration of Pockels-based electro-optic modulators in advanced silicon photonic platforms.
{\c} 2019 Optical Society of America. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved.
https://www.osapublishing.org/jlt/abstract.cfm?URI=jlt-37-5-1456
Publication date: March 1, 2019
This work was supported in part by the European Union (EU) under Horizon 2020 grant agreements no. H2020-ICT-2015-25-688579 (PHRESCO) and H2020-ICT-2017-1-780997 (plaCMOS).
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Submitted 6 November, 2019;
originally announced November 2019.
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Point defects at cleaved Sr$_{n+1}$Ru$_n$O$_{3n+1}$(001) surfaces
Authors:
Bernhard Stöger,
Marcel Hieckel,
Florian Mittendorfer,
Zhiming Wang,
Michael Schmid,
Gareth S. Parkinson,
David Fobes,
** Peng,
John. E. Ortmann,
Andreas Limbeck,
Zhiqiang Mao,
Josef Redinger,
Ulrike Diebold
Abstract:
The (001) surfaces of cleaved Sr$_3$Ru$_2$O$_7$ and Sr$_2$RuO$_4$ samples were investigated using low-temperature scanning tunneling microscopy and density functional theory calculations. Intrinsic defects are not created during cleaving. This experimental observation is consistent with calculations, where the formation energy for a Sr and O vacancy, 4.19 eV and 3.81 eV, respectively, is significa…
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The (001) surfaces of cleaved Sr$_3$Ru$_2$O$_7$ and Sr$_2$RuO$_4$ samples were investigated using low-temperature scanning tunneling microscopy and density functional theory calculations. Intrinsic defects are not created during cleaving. This experimental observation is consistent with calculations, where the formation energy for a Sr and O vacancy, 4.19 eV and 3.81 eV, respectively, is significantly larger than that required to cleave the crystal, 1.11 eV/(1 $\times$ 1) unit cell. Surface oxygen vacancies can be created through electron bombardment, however, and their appearance is shown to vary strongly with the imaging conditions. Point defects observed on as-cleaved surfaces result from bulk impurities and adsorption from the residual gas.
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Submitted 12 April, 2018;
originally announced April 2018.
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Probing chiral superconductivity in Sr$_{2}$RuO$_{4}$ underneath the surface by point contact measurements
Authors:
He Wang,
Jiawei Luo,
Weijian Lou,
Jian Wei,
J. E. Ortmann,
Z. Q. Mao,
Y. Liu
Abstract:
Sr$_{2}$RuO$_{4}$ (SRO) is the prime candidate for chiral $p$-wave superconductor with critical temperature $T_{c}(SRO)\sim$1.5 K. Chiral domains with opposite chiralities $p_{x}\pm ip_{y}$ were proposed, but yet to be confirmed. We measure the field dependence of the point contact (PC) resistance between a tungsten tip and the SRO-Ru eutectic crystal, where micrometer-sized Ru inclusions are embe…
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Sr$_{2}$RuO$_{4}$ (SRO) is the prime candidate for chiral $p$-wave superconductor with critical temperature $T_{c}(SRO)\sim$1.5 K. Chiral domains with opposite chiralities $p_{x}\pm ip_{y}$ were proposed, but yet to be confirmed. We measure the field dependence of the point contact (PC) resistance between a tungsten tip and the SRO-Ru eutectic crystal, where micrometer-sized Ru inclusions are embedded in SRO with atomic sharp interface. Ruthenium is an $s$-wave superconductor with $T_{c}(Ru)\sim$0.5 K, flux pinned near the Ru inclusions can suppress its superconductivity as reflected from the PC resistance and spectra. This flux pinning effect is originated from SRO \textit{underneath} the surface and is very strong. To fully remove it, one has to thermal cycle the sample above $T_{c}(SRO)$. This resembles the thermal demagnetization for a ferromagnet, where ferromagnetic domains are randomized above its Curie temperature. Another way is by applying alternating fields with decreasing amplitude, resembling field demagnetization for the ferromagnet. The observed hysteresis in magnetoresistance can be explained by domain dynamics, providing support for the existence of chiral domains. The origin of strong pinning \textit{underneath} the surface is also discussed.
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Submitted 21 October, 2016; v1 submitted 24 May, 2016;
originally announced May 2016.
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Magnetoresistance oscillations and the half-flux-quantum state in spin-triplet superconductor Sr2RuO4
Authors:
X. Cai,
Y. A. Ying,
J. E. Ortmann,
W. -F. Sun,
Z. -Q. Mao,
Y. Liu
Abstract:
We report results of our low-temperature magneto electric transport measurements on micron-sized short cylinders of odd-parity, spin-triplet superconductor Sr$_2$RuO$_4$ with the cylinder axis along the $c$ axis. The in-plane magnetic field and measurement current dependent magnetoresistance oscillations were found to feature an amplitude much larger than that expected from the conventional Little…
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We report results of our low-temperature magneto electric transport measurements on micron-sized short cylinders of odd-parity, spin-triplet superconductor Sr$_2$RuO$_4$ with the cylinder axis along the $c$ axis. The in-plane magnetic field and measurement current dependent magnetoresistance oscillations were found to feature an amplitude much larger than that expected from the conventional Little-Parks effect, suggesting that the magnetoresistance oscillations originate from vortex crossing. The free-energy barrier that controls the vortex crossing was modulated by the magnetic flux enclosed in the cylinder, the in-plane field, measurement current, and structural factors. Distinct features on magnetoresistance peaks were found, which we argue to be related to the emergence of half-flux quantum states, but only in samples for which the vortex crossing is confined at specific parts of the sample.
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Submitted 11 July, 2016; v1 submitted 1 July, 2015;
originally announced July 2015.
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Enhanced superconductivity at the interface of W/Sr$_{2}$RuO$_{4}$ point contact
Authors:
He Wang,
Weijian Lou,
Jiawei Luo,
Jian Wei,
Y. Liu,
J. E. Ortmann,
Z. Q. Mao
Abstract:
Differential resistance measurements are conducted for point contacts (PCs) between tungsten tip approaching along the $c$ axis direction and the $ab$ plane of Sr$_{2}$RuO$_{4}$ single crystal. Three key features are found. Firstly, within 0.2 mV there is a dome like conductance enhancement due to Andreev reflection at the normal-superconducting interface. By pushing the W tip further, the conduct…
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Differential resistance measurements are conducted for point contacts (PCs) between tungsten tip approaching along the $c$ axis direction and the $ab$ plane of Sr$_{2}$RuO$_{4}$ single crystal. Three key features are found. Firstly, within 0.2 mV there is a dome like conductance enhancement due to Andreev reflection at the normal-superconducting interface. By pushing the W tip further, the conductance enhancement increases from 3\% to more than 20\%, much larger than that was previously reported, probably due to the pressure exerted by the tip. Secondly, there are also superconducting like features at bias higher than 0.2 mV which persists up to 6.2 K, resembling the enhanced superconductivity under uniaxial pressure for bulk Sr$_{2}$RuO$_{4}$ crystals but more pronounced here. Third, the logarithmic background can be fitted with the Altshuler-Aronov theory of tunneling into quasi two dimensional electron system, consistent with the highly anisotropic electronic system in Sr$_{2}$RuO$_{4}$.
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Submitted 5 January, 2015;
originally announced January 2015.
