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Spectral analysis of Volterra integrodifferential equations with the kernels, depending on parameter
Authors:
Romeo Perez Ortiz,
Victor V. Vlasov,
Nadezhda A. Rautian
Abstract:
Spectral analysis of operator-functions which are the symbols of the abstract integrodifferential equations of the Gurtin-Pipkin is provided. These equations represent abstract wave equations disturbed by terms involving Volterra operators. Correct solvability in the Sobolev space $W_{2}^{2}((0, T), A^2)$, for arbitrary $T>0$, of that abstract integrodifferential equations is also studied.
Spectral analysis of operator-functions which are the symbols of the abstract integrodifferential equations of the Gurtin-Pipkin is provided. These equations represent abstract wave equations disturbed by terms involving Volterra operators. Correct solvability in the Sobolev space $W_{2}^{2}((0, T), A^2)$, for arbitrary $T>0$, of that abstract integrodifferential equations is also studied.
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Submitted 19 October, 2017;
originally announced October 2017.
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Correct solvability of hyperbolic Volterra equations with kernels depending on the parameter
Authors:
Romeo Perez Ortiz,
Victor V. Vlasov
Abstract:
We study the correct solvability of an abstract functional differential equations in Hilbert space, which includes integro-differential equations describing evolution of thermal phenomena, heat transfer in materials with memory or sound propagation in viscoelastic media.
We study the correct solvability of an abstract functional differential equations in Hilbert space, which includes integro-differential equations describing evolution of thermal phenomena, heat transfer in materials with memory or sound propagation in viscoelastic media.
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Submitted 2 December, 2014;
originally announced December 2014.
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Spectra of the Gurtin-Pipkin type equations with the kernel, depending on the parameter
Authors:
Romeo Perez Ortiz,
Victor V. Vlasov
Abstract:
In this paper, we study asymptotic behavior of the spectrum of the abstract Gurtin-Pipkin integro-differential equation with the kernel, depending on the parameter. The coefficients of this equation are unbounded and the main part is an abstract hyperbolic equation perturbed by terms that include Volterra integral operators.
In this paper, we study asymptotic behavior of the spectrum of the abstract Gurtin-Pipkin integro-differential equation with the kernel, depending on the parameter. The coefficients of this equation are unbounded and the main part is an abstract hyperbolic equation perturbed by terms that include Volterra integral operators.
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Submitted 18 March, 2014;
originally announced March 2014.
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Fundamental Performance Limits of Carbon Nanotube Thin-Film Transistors Achieved Using Hybrid Molecular Dielectrics
Authors:
Vinod K. Sangwan,
Rocio Ponce Ortiz,
Justice M. P. Alaboson,
Jonathan D. Emery,
Michael J. Bedzyk,
Lincoln J. Lauhon,
Tobin J. Marks,
Mark C. Hersam
Abstract:
In the past decade, semiconducting carbon nanotube thin films have been recognized as contending materials for wide-ranging applications in electronics, energy, and sensing. In particular, improvements in large-area flexible electronics have been achieved through independent advances in post-growth processing to resolve metallic versus semiconducting carbon nanotube heterogeneity, in improved gate…
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In the past decade, semiconducting carbon nanotube thin films have been recognized as contending materials for wide-ranging applications in electronics, energy, and sensing. In particular, improvements in large-area flexible electronics have been achieved through independent advances in post-growth processing to resolve metallic versus semiconducting carbon nanotube heterogeneity, in improved gate dielectrics, and in self-assembly processes. Moreover, controlled tuning of specific device components has afforded fundamental probes of the trade-offs between materials properties and device performance metrics. Nevertheless, carbon nanotube transistor performance suitable for real-world applications awaits understanding-based progress in the integration of independently pioneered device components. We achieve this here by integrating high-purity semiconducting carbon nanotube films with a custom-designed hybrid inorganic-organic gate dielectric. This synergistic combination of materials circumvents conventional design trade-offs, resulting in concurrent advances in several transistor performance metrics such as transconductance (6.5 μS/μm), intrinsic field-effect mobility (147 cm^2/Vs), sub-threshold swing (150 mV/decade), and on/off ratio (5 x 10^5), while also achieving hysteresis-free operation in ambient conditions.
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Submitted 14 September, 2012;
originally announced September 2012.
