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Unconventional Unidirectional Magnetoresistance in vdW Heterostructures
Authors:
I-Hsuan Kao,
Junyu Tang,
Gabriel Calderon Ortiz,
Menglin Zhu,
Sean Yuan,
Rahul Rao,
Jiahan Li,
James H. Edgar,
Jiaqiang Yan,
David G. Mandrus,
Kenji Watanabe,
Takashi Taniguchi,
**woo Hwang,
Ran Cheng,
Jyoti Katoch,
Simranjeet Singh
Abstract:
Electrical readout of magnetic states is a key to realize novel spintronics devices for efficient computing and data storage. Unidirectional magnetoresistance (UMR) in bilayer systems, consisting of a spin source material and a magnetic layer, refers to a change in the longitudinal resistance upon the reversal of magnetization, which typically originates from the interaction of spin-current and ma…
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Electrical readout of magnetic states is a key to realize novel spintronics devices for efficient computing and data storage. Unidirectional magnetoresistance (UMR) in bilayer systems, consisting of a spin source material and a magnetic layer, refers to a change in the longitudinal resistance upon the reversal of magnetization, which typically originates from the interaction of spin-current and magnetization at the interface. Because of UMR s linear dependence on applied charge current and magnetization, it can be used to electrically read the magnetization state. However, in conventional spin source materials, the spin polarization of an electric field induced spin current is restricted to be in the film plane and hence the ensuing UMR can only respond to the in plane component of the magnetization. On the other hand, magnets with perpendicular magnetic anisotropy (PMA) are highly desired for magnetic memory and spin-logic devices, while the electrical read out of PMA magnets through UMR is critically missing. Here, we report the discovery of an unconventional UMR in bilayer heterostructures of a topological semimetal (WTe2) and a PMA ferromagnetic insulator (Cr2Ge2Te6, CGT), which allows to electrically read the up and down magnetic states of the CGT layer by measuring the longitudinal resistance. Our theoretical calculations based on a tight binding model show that the unconventional UMR originates from the interplay of crystal symmetry breaking in WTe2 and magnetic exchange interaction across the WTe2 and CGT interface. Combining with the ability of WTe2 to obtain magnetic field free switching of the PMA magnets, our discoveries open an exciting pathway to achieve two terminal magnetic memory devices that operate solely on the spin orbit torque and UMR, which is critical for develo** next-generation non volatile and low power consumption data storage technologies.
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Submitted 17 May, 2024;
originally announced May 2024.
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Strain-dependent Insulating State and Kondo Effect in Epitaxial SrIrO$_{3}$ Films
Authors:
Gaurab Rimal,
Tanzila Tasnim,
Gabriel Calderon Ortiz,
George E. Sterbinsky,
**woo Hwang,
Ryan B. Comes
Abstract:
The large spin-orbit coupling in iridium oxides plays a significant role in driving novel physical behaviors, including emergent phenomena in the films and heterostructures of perovskite and Ruddlesden-Popper iridates. In this work, we study the role of epitaxial strain on the electronic behavior of thin SrIrO$_3$ films. We find that compressive epitaxial strain leads to metallic transport behavio…
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The large spin-orbit coupling in iridium oxides plays a significant role in driving novel physical behaviors, including emergent phenomena in the films and heterostructures of perovskite and Ruddlesden-Popper iridates. In this work, we study the role of epitaxial strain on the electronic behavior of thin SrIrO$_3$ films. We find that compressive epitaxial strain leads to metallic transport behavior, but a slight tensile strain shows gapped behavior. Temperature-dependent resistivity measurements are used to examine different behaviors in films as a function of strain. We find Kondo contributions to the resistivity, with stronger effects in films that are thinner and under less compressive epitaxial strain. These results show the potential to tune SrIrO$_3$ into Kondo insulating states and open possibilities for a quantum critical point that can be controlled with strain in epitaxial films.
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Submitted 16 April, 2024;
originally announced April 2024.
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The Jalisco Seismic Accelerometric Telemetric Network (RESAJ)
Authors:
Francisco Javier Nunez Cornu,
Juan Manuel Sandoval,
Edgar Alarcon,
Adan Gomez,
Carlos Suarez Plascencia,
Diana Nunez,
Elizabeth Trejo Gomez,
Oscar Sanchez Mariscal,
J. Guadalupe Candelas Ortiz,
Luz Maria Zuniga Medina
Abstract:
The Jalisco region of western Mexico is the locus of interaction among the North America, Cocos, and Rivera plates, giving rise to the Jalisco block. This region is one of the most tectonically active in Mexico, and here took place the largest instrumentally recorded earthquake in Mexico the twentieth century, on 3 June 1932 (M 8.2), three important tsunamis in the last 100 yrs, and two of the mos…
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The Jalisco region of western Mexico is the locus of interaction among the North America, Cocos, and Rivera plates, giving rise to the Jalisco block. This region is one of the most tectonically active in Mexico, and here took place the largest instrumentally recorded earthquake in Mexico the twentieth century, on 3 June 1932 (M 8.2), three important tsunamis in the last 100 yrs, and two of the most active volcanoes in Mexico. Nevertheless, the first seismicity studies here, undertaken with temporary networks, did not commence until 1994. In 2008, the Government of Jalisco and the University of Guadalajara funded a research project to install a seismic network in this region. The principal objective was to study the seismic hazard in the region and characterize seismic parameters in the different areas to design building codes. The Red Sismica y Acelerometrica Telemetrica de Jalisco (RESAJ) project was thus initiated in 2009. Its Central Lab is at Centro de Sismologia y Volcanologia de Occidente (SisVOc), located at the Universidad de Guadalajara in Puerto Vallarta. Currently, the RESAJ has 26 telemetered and 2 autonomous stations. The RESAJ serves as the seismological lab for the postgraduate program at SisVOc.
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Submitted 9 February, 2024;
originally announced February 2024.
