Showing 1–2 of 2 results for author: Orgiazzi, J F X

Driving-induced resonance narrowing in a strongly coupled cavity-qubit system

Authors: Eyal Buks, Paul Brookes, Eran Ginossar, Chunqing Deng, Jean-Luc F. X. Orgiazzi, Martin Otto, Adrian Lupascu

Abstract: We study a system consisting of a superconducting flux qubit strongly coupled to a microwave cavity. Externally applied qubit driving is employed in order to manipulate the spectrum of dressed states. We observe resonance narrowing in the region where the splitting between the two dressed fundamental resonances is tuned to zero. The narrowing in this region of overlap** resonances can be exploit… ▽ More We study a system consisting of a superconducting flux qubit strongly coupled to a microwave cavity. Externally applied qubit driving is employed in order to manipulate the spectrum of dressed states. We observe resonance narrowing in the region where the splitting between the two dressed fundamental resonances is tuned to zero. The narrowing in this region of overlap** resonances can be exploited for long-time storage of quantum states. In addition, we measure the response to strong cavity mode driving, and find a qualitative deviation between the experimental results and the predictions of a semiclassical model. On the other hand, good agreement is obtained using theoretical predictions obtained by numerically integrating the master equation governing the system's dynamics. The observed response demonstrates a process of a coherent cancellation of two meta-stable dressed states. △ Less

Submitted 1 August, 2020; originally announced August 2020.

Journal ref: Phys. Rev. A 102, 043716 (2020)

Suspended graphene devices with local gate control on an insulating substrate

Authors: Florian R. Ong, Zheng Cui, Muhammet A. Yurtalan, Cameron Vojvodin, Michał Papaj, Jean-Luc F. X. Orgiazzi, Chunqing Deng, Mustafa Bal, Adrian Lupascu

Abstract: We present a fabrication process for graphene-based devices where a graphene monolayer is suspended above a local metallic gate placed in a trench. As an example we detail the fabrication steps of a graphene field-effect transistor. The devices are built on a bare high-resistivity silicon substrate. At temperatures of 77~K and below, we observe the field-effect modulation of the graphene resistivi… ▽ More We present a fabrication process for graphene-based devices where a graphene monolayer is suspended above a local metallic gate placed in a trench. As an example we detail the fabrication steps of a graphene field-effect transistor. The devices are built on a bare high-resistivity silicon substrate. At temperatures of 77~K and below, we observe the field-effect modulation of the graphene resistivity by a voltage applied to the gate. This fabrication approach enables new experiments involving graphene-based superconducting qubits and nano-electromechanical resonators. The method is applicable to other two-dimensional materials. △ Less

Submitted 18 September, 2015; v1 submitted 13 March, 2015; originally announced March 2015.

Journal ref: Nanotechnology, vol 26, p 405201 (2015)