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Ultrahigh-$Q$ on-chip silicon-germanium microresonators
Authors:
Ryan Schilling,
Chi Xiong,
Swetha Kamlapurkar,
Abram Falk,
Nathan Marchack,
Stephen Bedell,
Richard Haight,
Christopher Scerbo,
Hanhee Paik,
Jason S. Orcutt
Abstract:
We demonstrate fully crystalline, single-mode ultrahigh quality factor integrated microresonators comprising epitaxially grown Si$_{0.86}$Ge$_{0.14}$ waveguide cores with silicon claddings. These waveguides support resonances with internal $Q >10^8$ for both polarization modes, a nearly order-of-magnitude improvement over that seen in prior integrated Si photonics platforms. The maximum $Q$ is…
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We demonstrate fully crystalline, single-mode ultrahigh quality factor integrated microresonators comprising epitaxially grown Si$_{0.86}$Ge$_{0.14}$ waveguide cores with silicon claddings. These waveguides support resonances with internal $Q >10^8$ for both polarization modes, a nearly order-of-magnitude improvement over that seen in prior integrated Si photonics platforms. The maximum $Q$ is $1.71\pm0.06 \times 10^8$ for the transverse magnetic (TM) polarization mode, corresponding to a loss of $0.39\pm0.02$ dB/m. Together with silicon's strong Kerr nonlinearity and low losses in the optical, microwave and acoustic regimes, our results could lead to the Si$_{1-x}$Ge$_x$/Si architecture unlocking important new avenues for Kerr frequency combs, optomechanics, and quantum transduction.
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Submitted 19 November, 2021;
originally announced November 2021.
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High-fidelity superconducting quantum processors via laser-annealing of transmon qubits
Authors:
Eric J. Zhang,
Srikanth Srinivasan,
Neereja Sundaresan,
Daniela F. Bogorin,
Yves Martin,
Jared B. Hertzberg,
John Timmerwilke,
Emily J. Pritchett,
Jeng-Bang Yau,
Cindy Wang,
William Landers,
Eric P. Lewandowski,
Adinath Narasgond,
Sami Rosenblatt,
George A. Keefe,
Isaac Lauer,
Mary Beth Rothwell,
Douglas T. McClure,
Oliver E. Dial,
Jason S. Orcutt,
Markus Brink,
Jerry M. Chow
Abstract:
Scaling the number of qubits while maintaining high-fidelity quantum gates remains a key challenge for quantum computing. Presently, superconducting quantum processors with >50-qubits are actively available. For such systems, fixed-frequency transmons are attractive due to their long coherence and noise immunity. However, scaling fixed-frequency architectures proves challenging due to precise rela…
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Scaling the number of qubits while maintaining high-fidelity quantum gates remains a key challenge for quantum computing. Presently, superconducting quantum processors with >50-qubits are actively available. For such systems, fixed-frequency transmons are attractive due to their long coherence and noise immunity. However, scaling fixed-frequency architectures proves challenging due to precise relative frequency requirements. Here we employ laser annealing to selectively tune transmon qubits into desired frequency patterns. Statistics over hundreds of annealed qubits demonstrate an empirical tuning precision of 18.5 MHz, with no measurable impact on qubit coherence. We quantify gate error statistics on a tuned 65-qubit processor, with median two-qubit gate fidelity of 98.7%. Baseline tuning statistics yield a frequency-equivalent resistance precision of 4.7 MHz, sufficient for high-yield scaling beyond 1000-qubit levels. Moving forward, we anticipate selective laser annealing to play a central role in scaling fixed-frequency architectures.
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Submitted 15 December, 2020;
originally announced December 2020.
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Laser-annealing Josephson junctions for yielding scaled-up superconducting quantum processors
Authors:
Jared B. Hertzberg,
Eric J. Zhang,
Sami Rosenblatt,
Easwar Magesan,
John A. Smolin,
Jeng-Bang Yau,
Vivekananda P. Adiga,
Martin Sandberg,
Markus Brink,
Jerry M. Chow,
Jason S. Orcutt
Abstract:
As superconducting quantum circuits scale to larger sizes, the problem of frequency crowding proves a formidable task. Here we present a solution for this problem in fixed-frequency qubit architectures. By systematically adjusting qubit frequencies post-fabrication, we show a nearly ten-fold improvement in the precision of setting qubit frequencies. To assess scalability, we identify the types of…
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As superconducting quantum circuits scale to larger sizes, the problem of frequency crowding proves a formidable task. Here we present a solution for this problem in fixed-frequency qubit architectures. By systematically adjusting qubit frequencies post-fabrication, we show a nearly ten-fold improvement in the precision of setting qubit frequencies. To assess scalability, we identify the types of 'frequency collisions' that will impair a transmon qubit and cross-resonance gate architecture. Using statistical modeling, we compute the probability of evading all such conditions, as a function of qubit frequency precision. We find that without post-fabrication tuning, the probability of finding a workable lattice quickly approaches 0. However with the demonstrated precisions it is possible to find collision-free lattices with favorable yield. These techniques and models are currently employed in available quantum systems and will be indispensable as systems continue to scale to larger sizes.
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Submitted 23 September, 2020; v1 submitted 1 September, 2020;
originally announced September 2020.
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Development of Quantum InterConnects for Next-Generation Information Technologies
Authors:
David Awschalom,
Karl K. Berggren,
Hannes Bernien,
Sunil Bhave,
Lincoln D. Carr,
Paul Davids,
Sophia E. Economou,
Dirk Englund,
Andrei Faraon,
Marty Fejer,
Saikat Guha,
Martin V. Gustafsson,
Evelyn Hu,
Liang Jiang,
Jungsang Kim,
Boris Korzh,
Prem Kumar,
Paul G. Kwiat,
Marko Lončar,
Mikhail D. Lukin,
David A. B. Miller,
Christopher Monroe,
Sae Woo Nam,
Prineha Narang,
Jason S. Orcutt
, et al. (10 additional authors not shown)
Abstract:
Just as classical information technology rests on a foundation built of interconnected information-processing systems, quantum information technology (QIT) must do the same. A critical component of such systems is the interconnect, a device or process that allows transfer of information between disparate physical media, for example, semiconductor electronics, individual atoms, light pulses in opti…
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Just as classical information technology rests on a foundation built of interconnected information-processing systems, quantum information technology (QIT) must do the same. A critical component of such systems is the interconnect, a device or process that allows transfer of information between disparate physical media, for example, semiconductor electronics, individual atoms, light pulses in optical fiber, or microwave fields. While interconnects have been well engineered for decades in the realm of classical information technology, quantum interconnects (QuICs) present special challenges, as they must allow the transfer of fragile quantum states between different physical parts or degrees of freedom of the system. The diversity of QIT platforms (superconducting, atomic, solid-state color center, optical, etc.) that will form a quantum internet poses additional challenges. As quantum systems scale to larger size, the quantum interconnect bottleneck is imminent, and is emerging as a grand challenge for QIT. For these reasons, it is the position of the community represented by participants of the NSF workshop on Quantum Interconnects that accelerating QuIC research is crucial for sustained development of a national quantum science and technology program. Given the diversity of QIT platforms, materials used, applications, and infrastructure required, a convergent research program including partnership between academia, industry and national laboratories is required.
This document is a summary from a U.S. National Science Foundation supported workshop held on 31 October - 1 November 2019 in Alexandria, VA. Attendees were charged to identify the scientific and community needs, opportunities, and significant challenges for quantum interconnects over the next 2-5 years.
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Submitted 2 January, 2020; v1 submitted 13 December, 2019;
originally announced December 2019.
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A monolithic 56 Gb/s silicon photonic pulse-amplitude modulation transmitter
Authors:
Chi Xiong,
Douglas M. Gill,
Jonathan E. Proesel,
Jason S. Orcutt,
Wilfried Haensch,
William M. J. Green
Abstract:
Silicon photonics promises to address the challenges for next-generation short-reach optical interconnects. Growing bandwidth demand in hyper-scale data centers and high-performance computing motivates the development of faster and more-efficient silicon photonics links. While it is challenging to raise the serial line rate, further scaling of the data rate can be realized by, for example, increas…
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Silicon photonics promises to address the challenges for next-generation short-reach optical interconnects. Growing bandwidth demand in hyper-scale data centers and high-performance computing motivates the development of faster and more-efficient silicon photonics links. While it is challenging to raise the serial line rate, further scaling of the data rate can be realized by, for example, increasing the number of parallel fibers, increasing the number of wavelengths per fiber, and using multi-level pulse-amplitude modulation (PAM). Among these approaches, PAM has a unique advantage because it does not require extra lasers or a costly overhaul of optical fiber cablings within the existing infrastructure. Here, we demonstrate the first fully monolithically integrated silicon photonic four-level PAM (PAM-4) transmitter operating at 56 Gb/s and demonstrate error-free transmission (bit-error-rate < 10$^{-12}$) up to 50 Gb/s without forward error correction. The superior PAM-4 waveform is enabled by optimization of silicon traveling wave modulators and monolithic integration of the CMOS driver circuits. Our results show that monolithic silicon photonics technology is a promising platform for future ultrahigh data rate optical interconnects.
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Submitted 26 August, 2016;
originally announced August 2016.
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Photonic Crystal Microcavities in a Microelectronics 45nm SOI CMOS Technology
Authors:
Christopher V. Poulton,
Xiaoge Zeng,
Mark T. Wade,
Jeffrey M. Shainline,
Jason S. Orcutt,
Milos A. Popovic
Abstract:
We demonstrate the first monolithically integrated linear photonic crystal microcavities in an advanced SOI CMOS microelectronics process (IBM 45nm 12SOI) with no in-foundry process modifications. The cavities were integrated into a standard microelectronics design flow meeting process design rules, and fabricated alongside transistors native to the process. We demonstrate both 1520nm wavelength a…
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We demonstrate the first monolithically integrated linear photonic crystal microcavities in an advanced SOI CMOS microelectronics process (IBM 45nm 12SOI) with no in-foundry process modifications. The cavities were integrated into a standard microelectronics design flow meeting process design rules, and fabricated alongside transistors native to the process. We demonstrate both 1520nm wavelength and 1180nm cavity designs using different cavity implementations due to design rule constraints. For the 1520nm and 1180nm designs, loaded quality factors of 2,000 and 4,000 are measured, and intrinsic quality factors of 100,000 and 60,000 are extracted. We also demonstrate an evanescent coupling geometry which decouples the cavity and waveguide-coupling design.
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Submitted 28 October, 2014; v1 submitted 22 June, 2014;
originally announced June 2014.
