Showing 1–50 of 59 results for author: Opel, M

Impact of magnetic anisotropy on the magnon Hanle effect in $α$-Fe$_2$O$_3$

Authors: Monika Scheufele, Janine Gückelhorn, Matthias Opel, Akashdeep Kamra, Hans Huebl, Rudolf Gross, Stephan Geprägs, Matthias Althammer

Abstract: In easy-plane antiferromagnets, the nature of the elementary excitations of the spin system is captured by the precession of the magnon pseudospin around its equilibrium pseudofield, manifesting itself in the magnon Hanle effect. Here, we investigate the impact of growth-induced changes in the magnetic anisotropy on this effect in the antiferromagnetic insulator $α$-Fe$_2$O$_3$ (hematite). To this… ▽ More In easy-plane antiferromagnets, the nature of the elementary excitations of the spin system is captured by the precession of the magnon pseudospin around its equilibrium pseudofield, manifesting itself in the magnon Hanle effect. Here, we investigate the impact of growth-induced changes in the magnetic anisotropy on this effect in the antiferromagnetic insulator $α$-Fe$_2$O$_3$ (hematite). To this end, we compare the structural, magnetic, and magnon-based spin transport properties of $α$-Fe$_2$O$_3$ films with different thicknesses grown by pulsed laser deposition in molecular and atomic oxygen atmospheres. While in films grown with molecular oxygen a spin-reorientation transition (Morin transition) is absent down to $10\,$K, we observe a Morin transition for those grown by atomic-oxygen-assisted deposition, indicating a change in magnetic anisotropy. Interestingly, even for a $19\,$nm thin $α$-Fe$_2$O$_3$ film grown with atomic oxygen we still detect a Morin transition at $125\,$K. We characterize the magnon Hanle effect in these $α$-Fe$_2$O$_3$ films via all-electrical magnon transport measurements. The films grown with atomic oxygen show a markedly different magnon spin signal from those grown in molecular oxygen atmospheres. Most importantly, the maximum magnon Hanle signal is significantly enhanced and the Hanle peak is shifted to lower magnetic field values for films grown with atomic oxygen. These observations suggest a change of magnetic anisotropy for $α$-Fe$_2$O$_3$ films fabricated by atomic-oxygen-assisted deposition resulting in an increased oxygen content in these films. Our findings provide new insights into the possibility to fine-tune the magnetic anisotropy in $α$-Fe$_2$O$_3$ and thereby to engineer the magnon Hanle effect. △ Less

Submitted 1 June, 2023; originally announced June 2023.

Journal ref: APL Mater. 11, 091115 (2023)

Observation of nonreciprocal magnon Hanle effect

Authors: Janine Gückelhorn, Sebastián de-la-Peña, Matthias Grammer, Monika Scheufele, Matthias Opel, Stephan Geprägs, Juan Carlos Cuevas, Rudolf Gross, Hans Huebl, Akashdeep Kamra, Matthias Althammer

Abstract: The precession of magnon pseudospin about the equilibrium pseudofield, the latter capturing the nature of magnonic eigen-excitations in an antiferromagnet, gives rise to the magnon Hanle effect. Its realization via electrically injected and detected spin transport in an antiferromagnetic insulator demonstrates its high potential for devices and as a convenient probe for magnon eigenmodes and the u… ▽ More The precession of magnon pseudospin about the equilibrium pseudofield, the latter capturing the nature of magnonic eigen-excitations in an antiferromagnet, gives rise to the magnon Hanle effect. Its realization via electrically injected and detected spin transport in an antiferromagnetic insulator demonstrates its high potential for devices and as a convenient probe for magnon eigenmodes and the underlying spin interactions in the antiferromagnet. Here, we observe a nonreciprocity in the Hanle signal measured in hematite using two spatially separated platinum electrodes as spin injector/detector. Interchanging their roles was found to alter the detected magnon spin signal. The recorded difference depends on the applied magnetic field and reverses sign when the signal passes its nominal maximum at the so-called compensation field. We explain these observations in terms of a spin transport direction-dependent pseudofield. The latter leads to a nonreciprocity, which is found to be controllable via the applied magnetic field. The observed nonreciprocal response in the readily available hematite films opens interesting opportunities for realizing exotic physics predicted so far only for antiferromagnets with special crystal structures. △ Less

Submitted 19 September, 2022; originally announced September 2022.

Journal ref: Phys. Rev. Lett. 130, 216703 (2023)

Influence of low-energy magnons on magnon Hanle experiments in easy-plane antiferromagnets

Authors: Janine Gückelhorn, Akashdeep Kamra, Tobias Wimmer, Matthias Opel, Stephan Geprägs, Rudolf Gross, Hans Huebl, Matthias Althammer

Abstract: Antiferromagnetic materials host pairs of spin-up and spin-down magnons which can be described in terms of a magnonic pseudospin. The close analogy between this magnonic pseudospin systems and that of electronic charge carriers led to the prediction of fascinating phenomena in antiferromagnets. Recently, the associated dynamics of antiferromagnetic pseudospin has been experimentally demonstrated a… ▽ More Antiferromagnetic materials host pairs of spin-up and spin-down magnons which can be described in terms of a magnonic pseudospin. The close analogy between this magnonic pseudospin systems and that of electronic charge carriers led to the prediction of fascinating phenomena in antiferromagnets. Recently, the associated dynamics of antiferromagnetic pseudospin has been experimentally demonstrated and, in particular, the first observation of the magnon Hanle effect has been reported. We here expand the magnonic spin transport description by explicitly taking into account contributions of finite-spin low-energy magnons. In our experiments we realize the spin injection and detection process by two Platinum strips and investigate the influence of the Pt-strips on the generation and diffusive transport of magnons in films of the antiferromagnetic insulator hematite. For both a 15 nm and a 100 nm thick film, we find a distinct signal caused by the magnon Hanle effect. However, the magnonic spin signal exhibits clear differences in both films. In contrast to the thin film, for the thicker one, we observe an oscillating behavior in the high magnetic field range as well as an additional offset signal in the low magnetic field regime. We attribute this offset signal to the presence of finite-spin low-energy magnons. △ Less

Submitted 7 December, 2021; originally announced December 2021.

Low Temperature Suppression of the Spin Nernst Angle in Pt

Authors: Tobias Wimmer, Janine Gückelhorn, Sebastian Wimmer, Sergiy Mankovsky, Hubert Ebert, Matthias Opel, Stephan Geprägs, Rudolf Gross, Hans Huebl, Matthias Althammer

Abstract: We demonstrate the low temperature suppression of the platinum (Pt) spin Nernst angle in bilayers consisting of the antiferromagnetic insulator hematite ($α$-Fe$_2$O$_3$) and Pt upon measuring the transverse spin Nernst magnetothermopower (TSNM). We show that the observed signal stems from the interplay between the interfacial spin accumulation in Pt originating from the spin Nernst effect and the… ▽ More We demonstrate the low temperature suppression of the platinum (Pt) spin Nernst angle in bilayers consisting of the antiferromagnetic insulator hematite ($α$-Fe$_2$O$_3$) and Pt upon measuring the transverse spin Nernst magnetothermopower (TSNM). We show that the observed signal stems from the interplay between the interfacial spin accumulation in Pt originating from the spin Nernst effect and the orientation of the Néel vector of $α$-Fe$_2$O$_3$, rather than its net magnetization. Since the latter is negligible in an antiferromagnet, our device is superior to ferromagnetic structures, allowing to unambiguously distinguish the TSNM from thermally excited magnon transport (TMT), which usually dominates in ferri/ferromagnets due to their non-zero magnetization. Evaluating the temperature dependence of the effect, we observe a vanishing TSNM below ~100 K. We compare these results with theoretical calculations of the temperature dependent spin Nernst conductivity and find excellent agreement. This provides evidence for a vanishing spin Nernst angle of Pt at low temperatures and the dominance of extrinsic contributions to the spin Nernst effect. △ Less

Submitted 23 March, 2021; originally announced March 2021.

Comments: 4 pages, 4 figures

Quantifying the spin mixing conductance of EuO/W heterostructures by spin Hall magnetoresistance experiments

Authors: Paul Rosenberger, Matthias Opel, Stephan Geprägs, Hans Huebl, Rudolf Gross, Martina Müller, Matthias Althammer

Abstract: The spin Hall magnetoresistance (SMR) allows to investigate the magnetic textures of magnetically ordered insulators in heterostructures with normal metals by magnetotransport experiments. We here report the observation of the SMR in in-situ prepared ferromagnetic EuO/W thin film bilayers with magnetically and chemically well-defined interfaces. We characterize the magnetoresistance effects utiliz… ▽ More The spin Hall magnetoresistance (SMR) allows to investigate the magnetic textures of magnetically ordered insulators in heterostructures with normal metals by magnetotransport experiments. We here report the observation of the SMR in in-situ prepared ferromagnetic EuO/W thin film bilayers with magnetically and chemically well-defined interfaces. We characterize the magnetoresistance effects utilizing angle-dependent and field-dependent magnetotransport measurements as a function of temperature. Applying the established SMR model, we derive and quantify the real and imaginary parts of the complex spin mixing interface conductance. We find that the imaginary part is by one order of magnitude larger than the real part. Both decrease with increasing temperature. This reduction is in agreement with thermal fluctuations in the ferromagnet. △ Less

Submitted 3 March, 2021; originally announced March 2021.

Comments: 5 pages, 4 figures

Controlling Domain-Wall Nucleation in Ta/CoFeB/MgO Nanomagnets via Local Ga+ Ion Irradiation

Authors: Simon Mendisch, Fabrizio Riente, Valentin Ahrens, Luca Gnoli, Michael Haider, Matthias Opel, Martina Kiechle, Massimo Ruo Roch, Markus Becherer

Abstract: Comprehensive control of the domain wall nucleation process is crucial for spin-based emerging technologies ranging from random-access and storage-class memories over domain-wall logic concepts to nanomagnetic logic. In this work, focused Ga+ ion-irradiation is investigated as an effective means to control domain-wall nucleation in Ta/CoFeB/MgO nanostructures. We show that analogously to He+ irrad… ▽ More Comprehensive control of the domain wall nucleation process is crucial for spin-based emerging technologies ranging from random-access and storage-class memories over domain-wall logic concepts to nanomagnetic logic. In this work, focused Ga+ ion-irradiation is investigated as an effective means to control domain-wall nucleation in Ta/CoFeB/MgO nanostructures. We show that analogously to He+ irradiation, it is not only possible to reduce the perpendicular magnetic anisotropy but also to increase it significantly, enabling new, bidirectional manipulation schemes. First, the irradiation effects are assessed on film level, sketching an overview of the dose-dependent changes in the magnetic energy landscape. Subsequent time-domain nucleation characteristics of irradiated nanostructures reveal substantial increases in the anisotropy fields but surprisingly small effects on the measured energy barriers, indicating shrinking nucleation volumes. Spatial control of the domain wall nucleation point is achieved by employing focused irradiation of pre-irradiated magnets, with the diameter of the introduced circular defect controlling the coercivity. Special attention is given to the nucleation mechanisms, changing from a Stoner-Wohlfarth particle's coherent rotation to depinning from an anisotropy gradient. Dynamic micromagnetic simulations and related measurements are used in addition to model and analyze this depinning-dominated magnetization reversal. △ Less

Submitted 15 February, 2021; originally announced February 2021.

Journal ref: Phys. Rev. Applied 16, 014039 (2021)

Static magnetic proximity effects and spin Hall magnetoresistance in Pt/Y$_{3}$Fe$_{5}$O$_{12}$ and inverted Y$_{3}$Fe$_{5}$O$_{12}$/Pt bilayers

Authors: Stephan Geprägs, Christoph Klewe, Sibylle Meyer, Dominik Graulich, Felix Schade, Marc Schneider, Sonia Francoual, Stephen P. Collins, Katharina Ollefs, Fabrice Wilhelm, Andrei Rogalev, Yves Joly, Sebastian T. B. Goennenwein, Matthias Opel, Timo Kuschel, Rudolf Gross

Abstract: The magnetic state of heavy metal Pt thin films in proximity to the ferrimagnetic insulator Y$_{3}$Fe$_{5}$O$_{12}$ has been investigated systematically by means of x-ray magnetic circular dichroism and x-ray resonant magnetic reflectivity measurements combined with angle-dependent magnetotransport studies. To reveal intermixing effects as the possible cause for induced magnetic moments in Pt, we… ▽ More The magnetic state of heavy metal Pt thin films in proximity to the ferrimagnetic insulator Y$_{3}$Fe$_{5}$O$_{12}$ has been investigated systematically by means of x-ray magnetic circular dichroism and x-ray resonant magnetic reflectivity measurements combined with angle-dependent magnetotransport studies. To reveal intermixing effects as the possible cause for induced magnetic moments in Pt, we compare thin film heterostructures with different order of the layer stacking and different interface properties. For standard Pt layers on Y$_{3}$Fe$_{5}$O$_{12}$ thin films, we do not detect any static magnetic polarization in Pt. These samples show an angle-dependent magnetoresistance behavior, which is consistent with the established spin Hall magnetoresistance. In contrast, for the inverted layer sequence, Y$_{3}$Fe$_{5}$O$_{12}$ thin films grown on Pt layers, Pt displays a finite induced magnetic moment comparable to that of all-metallic Pt/Fe bilayers. This magnetic moment is found to originate from finite intermixing at the Y$_{3}$Fe$_{5}$O$_{12}$/Pt interface. As a consequence, we found a complex angle-dependent magnetoresistance indicating a superposition of the spin Hall and the anisotropic magnetoresistance in these type of samples. Both effects can be disentangled from each other due to their different angle dependence and their characteristic temperature evolution. △ Less

Submitted 8 October, 2020; originally announced October 2020.

Journal ref: Phys. Rev. B 102, 214438 (2020)

Precise control of $J_\mathrm{eff}=1/2$ magnetic properties in Sr$_2$IrO$_4$ epitaxial thin films by variation of strain and thin film thickness

Authors: Stephan Geprägs, Björn Erik Skovdal, Monika Scheufele, Matthias Opel, Didier Wermeille, Paul Thompson, Alessandro Bombardi, Virginie Simonet, Stéphane Grenier, Pascal Lejay, Gilbert Andre Chahine, Diana Quintero Castro, Rudolf Gross, Dan Mannix

Abstract: We report on a comprehensive investigation of the effects of strain and film thickness on the structural and magnetic properties of epitaxial thin films of the prototypal $J_\mathrm{eff}=1/2$ compound Sr$_2$IrO$_4$ by advanced X-ray scattering. We find that the Sr$_2$IrO$_4$ thin films can be grown fully strained up to a thickness of 108 nm. By using X-ray resonant scattering, we show that the out… ▽ More We report on a comprehensive investigation of the effects of strain and film thickness on the structural and magnetic properties of epitaxial thin films of the prototypal $J_\mathrm{eff}=1/2$ compound Sr$_2$IrO$_4$ by advanced X-ray scattering. We find that the Sr$_2$IrO$_4$ thin films can be grown fully strained up to a thickness of 108 nm. By using X-ray resonant scattering, we show that the out-of-plane magnetic correlation length is strongly dependent on the thin film thickness, but independent of the strain state of the thin films. This can be used as a finely tuned dial to adjust the out-of-plane magnetic correlation length and transform the magnetic anisotropy from two-dimensional (2D) to three-dimensional (3D) behavior by incrementing film thickness. These results provide a clearer picture for the systematic control of the magnetic degrees of freedom in epitaxial thin films of Sr$_2$IrO$_4$ and bring to light the potential for a rich playground to explore the physics of $5d$-transition metal compounds. △ Less

Submitted 28 September, 2020; originally announced September 2020.

Observation of Antiferromagnetic Magnon Pseudospin Dynamics and the Hanle effect

Authors: Tobias Wimmer, Akashdeep Kamra, Janine Gückelhorn, Matthias Opel, Stephan Geprägs, Rudolf Gross, Hans Huebl, Matthias Althammer

Abstract: We report on experiments demonstrating coherent control of magnon spin transport and pseudospin dynamics in a thin film of the antiferromagnetic insulator hematite utilizing two Pt strips for all-electrical magnon injection and detection. The measured magnon spin signal at the detector reveals an oscillation of its polarity as a function of the externally applied magnetic field. We quantitatively… ▽ More We report on experiments demonstrating coherent control of magnon spin transport and pseudospin dynamics in a thin film of the antiferromagnetic insulator hematite utilizing two Pt strips for all-electrical magnon injection and detection. The measured magnon spin signal at the detector reveals an oscillation of its polarity as a function of the externally applied magnetic field. We quantitatively explain our experiments in terms of diffusive magnon transport and a coherent precession of the magnon pseudospin caused by the easy-plane anisotropy and the Dzyaloshinskii-Moriya interaction. This experimental observation can be viewed as the magnonic analogue of the electronic Hanle effect and the Datta-Das transistor, unlocking the high potential of antiferromagnetic magnonics towards the realization of rich electronics-inspired phenomena. △ Less

Submitted 13 December, 2020; v1 submitted 2 August, 2020; originally announced August 2020.

Comments: 6 pages, 3 figures

Journal ref: Phys. Rev. Lett. 125, 247204 (2020)

Effect of interfacial oxidation layer in spin pum** experiments on Ni$_{80}$Fe$_{20}$/SrIrO$_3$ heterostructures

Authors: T. S. Suraj, Manuel Müller, Sarah Gelder, Stephan Geprägs, Matthias Opel, Mathias Weiler, K. Sethupathi, Hans Huebl, Rudolf Gross, M. S. Ramachandra Rao, Matthias Althammer

Abstract: SrIrO$_3$ with its large spin-orbit coupling and low charge conductivity has emerged as a potential candidate for efficient spin-orbit torque magnetization control in spintronic devices. We here report on the influence of an interfacial oxide layer on spin pum** experiments in Ni$_{80}$Fe$_{20}$ (NiFe)/SrIrO$_3$ bilayer heterostructures. To investigate this scenario we have carried out broadband… ▽ More SrIrO$_3$ with its large spin-orbit coupling and low charge conductivity has emerged as a potential candidate for efficient spin-orbit torque magnetization control in spintronic devices. We here report on the influence of an interfacial oxide layer on spin pum** experiments in Ni$_{80}$Fe$_{20}$ (NiFe)/SrIrO$_3$ bilayer heterostructures. To investigate this scenario we have carried out broadband ferromagnetic resonance (BBFMR) measurements, which indicate the presence of an interfacial antiferromagnetic oxide layer. We performed in-plane BBFMR experiments at cryogenic temperatures, which allowed us to simultaneously study dynamic spin pum** properties (Gilbert dam**) and static magnetic properties (such as the effective magnetization and magnetic anisotropy). The results for NiFe/SrIrO$_3$ bilayer thin films were analyzed and compared to those from a NiFe/NbN/SrIrO$_3$ trilayer reference sample, where a spin-transparent, ultra-thin NbN layer was inserted to prevent oxidation of NiFe. At low temperatures, we observe substantial differences in the magnetization dynamics parameters of these samples, which can be explained by an antiferromagnetic interfacial layer in the NiFe/SrIrO$_3$ bilayers. △ Less

Submitted 7 May, 2020; originally announced May 2020.

Comments: 5 pages, 4 figures

Spin Hall magnetoresistance in antiferromagnetic insulators

Authors: Stephan Geprägs, Matthias Opel, Johanna Fischer, Olena Gomonay, Philipp Schwenke, Matthias Althammer, Hans Huebl, Rudolf Gross

Abstract: Antiferromagnetic materials promise improved performance for spintronic applications, as they are robust against external magnetic field perturbations and allow for faster magnetization dynamics compared to ferromagnets. The direct observation of the antiferromagnetic state, however, is challenging due to the absence of a macroscopic magnetization. Here, we show that the spin Hall magnetoresistanc… ▽ More Antiferromagnetic materials promise improved performance for spintronic applications, as they are robust against external magnetic field perturbations and allow for faster magnetization dynamics compared to ferromagnets. The direct observation of the antiferromagnetic state, however, is challenging due to the absence of a macroscopic magnetization. Here, we show that the spin Hall magnetoresistance (SMR) is a versatile tool to probe the antiferromagnetic spin structure via simple electrical transport experiments by investigating the easy-plane antiferromagnetic insulators $α$-Fe2O3 (hematite) and NiO in bilayer heterostructures with a Pt heavy metal top electrode. While rotating an external magnetic field in three orthogonal planes, we record the longitudinal and the transverse resistivities of Pt and observe characteristic resistivity modulations consistent with the SMR effect. We analyze both their amplitude and phase and compare the data to the results from a prototypical collinear ferrimagnetic Y3Fe5O12/Pt bilayer. The observed magnetic field dependence is explained in a comprehensive model, based on two magnetic sublattices and taking into account magnetic field-induced modifications of the domain structure. Our results show that the SMR allows us to understand the spin configuration and to investigate magnetoelastic effects in antiferromagnetic multi-domain materials. Furthermore, in $α$-Fe2O3/Pt bilayers, we find an unexpectedly large SMR amplitude of $2.5 \times 10^{-3}$, twice as high as for prototype Y3Fe5O12/Pt bilayers, making the system particularly interesting for room-temperature antiferromagnetic spintronic applications. △ Less

Submitted 23 June, 2020; v1 submitted 6 April, 2020; originally announced April 2020.

Journal ref: J. App. Phys. 127, 243902 (2020)

Large spin Hall magnetoresistance in antiferromagnetic α-Fe2O3/Pt heterostructures

Authors: Johanna Fischer, Matthias Althammer, Nynke Vlietstra, Hans Huebl, Sebastian T. B. Goennenwein, Rudolf Gross, Stephan Geprägs, Matthias Opel

Abstract: We investigate the spin Hall magnetoresistance (SMR) at room temperature in thin film heterostructures of antiferromagnetic, insulating, (0001)-oriented alpha-Fe2O3 (hematite) and Pt. We measure their longitudinal and transverse resistivities while rotating an applied magnetic field of up to 17T in three orthogonal planes. For out-of-plane magnetotransport measurements, we find indications for a m… ▽ More We investigate the spin Hall magnetoresistance (SMR) at room temperature in thin film heterostructures of antiferromagnetic, insulating, (0001)-oriented alpha-Fe2O3 (hematite) and Pt. We measure their longitudinal and transverse resistivities while rotating an applied magnetic field of up to 17T in three orthogonal planes. For out-of-plane magnetotransport measurements, we find indications for a multidomain antiferromagnetic configuration whenever the field is aligned along the film normal. For in-plane field rotations, we clearly observe a sinusoidal resistivity oscillation characteristic for the SMR due to a coherent rotation of the Neel vector. The maximum SMR amplitude of 0.25% is, surprisingly, twice as high as for prototypical ferrimagnetic Y3Fe5O12/Pt heterostructures. The SMR effect saturates at much smaller magnetic fields than in comparable antiferromagnets, making the alpha-Fe2O3/Pt system particularly interesting for room-temperature antiferromagnetic spintronic applications. △ Less

Submitted 18 January, 2020; v1 submitted 31 July, 2019; originally announced July 2019.

Comments: 10 pages, 9 figures, 61 (updated) references, including supplemental material

Journal ref: Phys. Rev. Applied 13, 014019 (2020)

Current direction anisotropy of the spin Hall magnetoresistance in nickel ferrite thin films with bulk-like magnetic properties

Authors: Matthias Althammer, Amit Vikam Singh, Tobias Wimmer, Zbigniew Galazka, Hans Huebl, Matthias Opel, Rudolf Gross, Arunava Gupta

Abstract: We utilize spin Hall magnetoresistance (SMR) measurements to experimentally investigate the pure spin current transport and magnetic properties of nickel ferrite (NiFe2O4,NFO)/normal metal (NM) thin film heterostructures. We use (001)-oriented NFO thin films grown on lattice-matched magnesium gallate substrates by pulsed laser deposition, which significantly improves the magnetic and structural pr… ▽ More We utilize spin Hall magnetoresistance (SMR) measurements to experimentally investigate the pure spin current transport and magnetic properties of nickel ferrite (NiFe2O4,NFO)/normal metal (NM) thin film heterostructures. We use (001)-oriented NFO thin films grown on lattice-matched magnesium gallate substrates by pulsed laser deposition, which significantly improves the magnetic and structural properties of the ferrimagnetic insulator. The NM in our experiments is either Pt or Ta. A comparison of the obtained SMR magnitude for charge currents applied in the [100]- and [110]-direction of NFO yields a change of 50% for Pt at room temperature. We also investigated the temperature dependence of this current direction anisotropy and find that it is qualitatively different for the conductivity and the SMR magnitude. From our results we conclude that the observed current direction anisotropy may originate from an anisotropy of the spin mixing conductance or of the spin Hall effect in these Pt and Ta layers, and/or additional spin-galvanic contributions from the NFO/NM interface. △ Less

Submitted 12 November, 2018; originally announced November 2018.

Phonon anomalies in FeS

Authors: A. Baum, A. Milosavljević, N. Lazarević, M. M. Radonjić, B. Nikolić, M. Mitschek, Z. Inanloo Maranloo, M. Šćepanović, M. Grujuić-Brojčin, N. Stojilović, M. Opel, Aifeng Wang, C. Petrovic, Z. V. Popović, R. Hackl

Abstract: We present results from light scattering experiments on tetragonal FeS with the focus placed on lattice dynamics. We identify the Raman active A1g and B1g phonon modes, a second order scattering process involving two acoustic phonons, and contributions from potentially defect-induced scattering. The temperature dependence between 300 and 20K of all observed phonon energies is governed by the latti… ▽ More We present results from light scattering experiments on tetragonal FeS with the focus placed on lattice dynamics. We identify the Raman active A1g and B1g phonon modes, a second order scattering process involving two acoustic phonons, and contributions from potentially defect-induced scattering. The temperature dependence between 300 and 20K of all observed phonon energies is governed by the lattice contraction. Below 20K the phonon energies increase by 0.5-1 cm$^{-1}$ thus indicating putative short range magnetic order. Along with the experiments we performed lattice-dynamical simulations and a symmetry analysis for the phonons and potential overtones and find good agreement with the experiments. In particular, we argue that the two-phonon excitation observed in a gap between the optical branches becomes observable due to significant electron-phonon interaction. △ Less

Submitted 13 February, 2018; v1 submitted 7 December, 2017; originally announced December 2017.

Comments: 13 pages, 9 figures

Journal ref: Phys. Rev. B 97, 054306 (2018)

Spin Hall magnetoresistance in antiferromagnet/heavy-metal heterostructures

Authors: Johanna Fischer, Olena Gomonay, Richard Schlitz, Kathrin Ganzhorn, Nynke Vlietstra, Matthias Althammer, Hans Huebl, Matthias Opel, Rudolf Gross, Sebastian T. B. Goennenwein, Stephan Geprägs

Abstract: We investigate the spin Hall magnetoresistance in thin film bilayer heterostructures of the heavy metal Pt and the antiferromagnetic insulator NiO. While rotating an external magnetic field in the easy plane of NiO, we record the longitudinal and the transverse resistivity of the Pt layer and observe an amplitude modulation consistent with the spin Hall magnetoresistance. In comparison to Pt on co… ▽ More We investigate the spin Hall magnetoresistance in thin film bilayer heterostructures of the heavy metal Pt and the antiferromagnetic insulator NiO. While rotating an external magnetic field in the easy plane of NiO, we record the longitudinal and the transverse resistivity of the Pt layer and observe an amplitude modulation consistent with the spin Hall magnetoresistance. In comparison to Pt on collinear ferrimagnets, the modulation is phase shifted by 90° and its amplitude strongly increases with the magnitude of the magnetic field. We explain the observed magnetic field-dependence of the spin Hall magnetoresistance in a comprehensive model taking into account magnetic field induced modifications of the domain structure in antiferromagnets. With this generic model we are further able to estimate the strength of the magnetoelastic coupling in antiferromagnets. Our detailed study shows that the spin Hall magnetoresistance is a versatile tool to investigate the magnetic spin structure as well as magnetoelastic effects, even in antiferromagnetic multidomain materials. △ Less

Submitted 15 January, 2018; v1 submitted 13 September, 2017; originally announced September 2017.

Journal ref: Phys. Rev. B 97, 014417 (2018)

Magnetic excitations and amplitude fluctuations in insulating cuprates

Authors: Nitin Chelwani, Andreas Baum, Thomas Böhm, Matthias Opel, Francesca Venturini, Leonardo Tassini, Andreas Erb, Helmuth Berger, László Forró, Rudi Hackl

Abstract: We present results from light scattering experiments on three insulating antiferromagnetic cuprates, YBa$_2$Cu$_3$O$_{6.05}$, Bi$_2$Sr$_2$YCu$_2$O$_{8+δ}$, and La$_2$CuO$_4$ as a function of polarization and excitation energy {using samples of the latest generation. From the raw data we derive symmetry-resolved spectra.} The spectral shape in $B_{1g}$ symmetry is found to be nearly universal and i… ▽ More We present results from light scattering experiments on three insulating antiferromagnetic cuprates, YBa$_2$Cu$_3$O$_{6.05}$, Bi$_2$Sr$_2$YCu$_2$O$_{8+δ}$, and La$_2$CuO$_4$ as a function of polarization and excitation energy {using samples of the latest generation. From the raw data we derive symmetry-resolved spectra.} The spectral shape in $B_{1g}$ symmetry is found to be nearly universal and independent of the excitation energy. The spectra agree quantitatively with predictions by field theory [\onlinecite{Weidinger:2015}] facilitating the precise extraction of the Heisenberg coupling $J$. {In addition, the asymmetric line shape on the high-energy side is found to be related to amplitude fluctuations of the magnetization. In La$_2$CuO$_4$ alone minor contributions from resonance effects may be identified.} The spectra in the other symmetries are not universal. The variations may be traced back to weak resonance effects and extrinsic contributions. For all three compounds we find support for the existence of chiral excitations appearing as a continuum in $A_{2g}$ symmetry having an onset slightly below $3J$. In La$_2$CuO$_4$ an additional isolated excitation appears on top of the $A_{2g}$ continuum. △ Less

Submitted 5 May, 2018; v1 submitted 3 May, 2017; originally announced May 2017.

Comments: 8 pages, 7 figures

Journal ref: Phys. Rev. B 97, 024407 (2018)

Pure spin current transport in gallium doped zinc oxide

Authors: Matthias Althammer, Joynarayan Mukherjee, Stephan Geprägs, Sebastian T. B. Goennenwein, Matthias Opel, M. S. Ramachandra Rao, Rudolf Gross

Abstract: We study the flow of a pure spin current through zinc oxide by measuring the spin Hall magnetoresistance (SMR) in thin film trilayer samples consisting of bismuth-substituted yttrium iron garnet (Bi:YIG), gallium-doped zinc oxide (Ga:ZnO), and platinum. We investigate the dependence of the SMR magnitude on the thickness of the Ga:ZnO interlayer and compare to a Bi:YIG/Pt bilayer. We find that the… ▽ More We study the flow of a pure spin current through zinc oxide by measuring the spin Hall magnetoresistance (SMR) in thin film trilayer samples consisting of bismuth-substituted yttrium iron garnet (Bi:YIG), gallium-doped zinc oxide (Ga:ZnO), and platinum. We investigate the dependence of the SMR magnitude on the thickness of the Ga:ZnO interlayer and compare to a Bi:YIG/Pt bilayer. We find that the SMR magnitude is reduced by almost one order of magnitude upon inserting a Ga:ZnO interlayer, and continuously decreases with increasing interlayer thickness. Nevertheless, the SMR stays finite even for a $12\;\mathrm{nm}$ thick Ga:ZnO interlayer. These results show that a pure spin current indeed can propagate through a several nm-thick degenerately doped zinc oxide layer. We also observe differences in both the temperature and the field dependence of the SMR when comparing tri- and bilayers. Finally, we compare our data to predictions of a model based on spin diffusion. This shows that interface resistances play a crucial role for the SMR magnitude in these trilayer structures. △ Less

Submitted 21 December, 2016; originally announced December 2016.

Anomalous Hall effect in YIG$|$Pt bilayers

Authors: Sibylle Meyer, Richard Schlitz, Stephan Geprägs, Matthias Opel, Hans Huebl, Rudolf Gross, Sebastian T. B. Goennenwein

Abstract: We measure the ordinary and the anomalous Hall effect in a set of yttrium iron garnet$|$platinum (YIG$|$Pt) bilayers via magnetization orientation dependent magnetoresistance experiments. Our data show that the presence of the ferrimagnetic insulator YIG leads to an anomalous Hall like signature in Pt, sensitive to both Pt thickness and temperature. Interpretation of the experimental findings in t… ▽ More We measure the ordinary and the anomalous Hall effect in a set of yttrium iron garnet$|$platinum (YIG$|$Pt) bilayers via magnetization orientation dependent magnetoresistance experiments. Our data show that the presence of the ferrimagnetic insulator YIG leads to an anomalous Hall like signature in Pt, sensitive to both Pt thickness and temperature. Interpretation of the experimental findings in terms of the spin Hall anomalous Hall effect indicates that the imaginary part of the spin mixing interface conductance $G_{\mathrm{i}}$ plays a crucial role in YIG$|$Pt bilayers. In particular, our data suggest a sign change in $G_{\mathrm{i}}$ between $10\,\mathrm{K}$ and $300\,\mathrm{K}$. Additionally, we report a higher order Hall effect, which appears in thin Pt films on YIG at low temperatures. △ Less

Submitted 7 April, 2015; v1 submitted 12 January, 2015; originally announced January 2015.

Comments: four pages including supplementary information

Journal ref: APL 106 132402 (2015)

Temperature dependent spin transport properties of Platinum inferred from spin Hall magnetoresistance measurements

Authors: Sibylle Meyer, Matthias Althammer, Stephan Geprägs, Matthias Opel, Rudolf Gross, Sebastian T. B. Goennenwein

Abstract: We study the temperature dependence of the spin Hall magnetoresistance (SMR) in yttrium iron garnet/platinum hybrid structures via magnetization orientation dependent magnetoresistance measurements. Our experiments show a decrease of the SMR magnitude with decreasing temperature. Using the sensitivity of the SMR to the spin transport properties of the normal metal, we interpret our data in terms o… ▽ More We study the temperature dependence of the spin Hall magnetoresistance (SMR) in yttrium iron garnet/platinum hybrid structures via magnetization orientation dependent magnetoresistance measurements. Our experiments show a decrease of the SMR magnitude with decreasing temperature. Using the sensitivity of the SMR to the spin transport properties of the normal metal, we interpret our data in terms of a decrease of the spin Hall angle in platinum from 0.11 at room temperature to 0.075 at 10K, while the spin diffusion length and the spin mixing conductance of the ferrimagnetic insulator/normal metal interface remain almost constant. △ Less

Submitted 6 June, 2014; v1 submitted 30 January, 2014; originally announced January 2014.

Journal ref: Appl. Phys. Lett. 104, 242411 (2014)

Unambiguous determination of spin dephasing times in ZnO

Authors: Sebastian Kuhlen, Ralph Ledesch, Robin de Winter, Matthias Althammer, Sebastian T. B. Goennenwein, Matthias Opel, Rudolf Gross, Thomas A. Wassner, Martin S. Brandt, Bernd Beschoten

Abstract: Time-resolved magneto-optics is a well-established optical pump probe technique to generate and to probe spin coherence in semiconductors. By this method, spin dephasing times T_2^* can easily be determined if their values are comparable to the available pump-probe-delays. If T_2^* exceeds the laser repetition time, however, resonant spin amplification (RSA) can equally be used to extract T_2^*. W… ▽ More Time-resolved magneto-optics is a well-established optical pump probe technique to generate and to probe spin coherence in semiconductors. By this method, spin dephasing times T_2^* can easily be determined if their values are comparable to the available pump-probe-delays. If T_2^* exceeds the laser repetition time, however, resonant spin amplification (RSA) can equally be used to extract T_2^*. We demonstrate that in ZnO these techniques have several trip** hazards resulting in deceptive values for T_2^* and show how to avoid them. We show that the temperature dependence of the amplitude ratio of two separate spin species can easily be misinterpreted as a strongly temperature dependent T_2^* of a single spin ensemble, while the two spin species have T_2^* values which are nearly independent of temperature. Additionally, consecutive pump pulses can significantly diminish the spin polarization, which remains from previous pump pulses. While this barely affects T_2^* values extracted from delay line scans, it results in seemingly shorter T_2^* values in RSA. △ Less

Submitted 25 September, 2013; originally announced September 2013.

Comments: 11 pages, 10 figures

Report number: SPP1285

Journal ref: Phys. Status Solidi B 251, 1861 (2014)

Zinc Oxide - From Dilute Magnetic Do** to Spin Transport

Authors: Matthias Opel, Sebastian T. B. Goennenwein, Matthias Althammer, Karl-Wilhelm Nielsen, Eva-Maria Karrer-Müller, Sebastian Bauer, Konrad Senn, Christoph Schwark, Christian Weier, Gernot Güntherodt, Bernd Beschoten, Rudolf Gross

Abstract: During the past years there has been renewed interest in the wide-bandgap II-VI semiconductor ZnO, triggered by promising prospects for spintronic applications. First, ferromagnetism was predicted for dilute magnetic do**. In comprehensive investigation of ZnO:Co thin films based on the combined measurement of macroscopic and microscopic properties, we find no evidence for carrier-mediated itine… ▽ More During the past years there has been renewed interest in the wide-bandgap II-VI semiconductor ZnO, triggered by promising prospects for spintronic applications. First, ferromagnetism was predicted for dilute magnetic do**. In comprehensive investigation of ZnO:Co thin films based on the combined measurement of macroscopic and microscopic properties, we find no evidence for carrier-mediated itinerant ferromagnetism. Phase-pure, crystallographically excellent ZnO:Co is uniformly paramagnetic. Superparamagnetism arises when phase separation or defect formation occurs, due to nanometer-sized metallic precipitates. Other compounds like ZnO:(Li,Ni) and ZnO:Cu do not exhibit indication of ferromagnetism. Second, its small spin-orbit coupling and correspondingly large spin coherence length makes ZnO suitable for transporting or manipulating spins in spintronic devices. From optical pump/optical probe experiments, we find a spin dephasing time of the order of 15 ns at low temperatures which we attribute to electrons bound to Al donors. In all-electrical magnetotransport measurements, we successfully create and detect a spin-polarized ensemble of electrons and transport this spin information across several nanometers. We derive a spin lifetime of 2.6 ns for these itinerant spins at low temperatures, corresponding well to results from an electrical pump/optical probe experiment. △ Less

Submitted 23 September, 2013; originally announced September 2013.

Comments: 11 pages, 6 figures, 99 references

Report number: SPP1285

Journal ref: Phys. Status Solidi B 251, 1700 (2014)

Comment on "Pt magnetic polarization on Y3Fe5O12 and magnetotransport characteristics"

Authors: Stephan Geprägs, Sebastian T. B. Goennenwein, Marc Schneider, Fabrice Wilhelm, Katharina Ollefs, Andrei Rogalev, Matthias Opel, Rudolf Gross

Abstract: In a recent Letter [Y.M. Lu et al., Phys. Rev. Lett. 110, 147207 (2013)], Lu et al. reported on "ferromagneticlike transport properties" of thin films of Pt, deposited ex situ via sputtering on the ferrimagnetic insulator Y3Fe5O12. The authors found a magnetoresistance in Pt displaying a hysteresis corresponding to the coercive field of Y3Fe5O12, consistent with the findings of other groups. While… ▽ More In a recent Letter [Y.M. Lu et al., Phys. Rev. Lett. 110, 147207 (2013)], Lu et al. reported on "ferromagneticlike transport properties" of thin films of Pt, deposited ex situ via sputtering on the ferrimagnetic insulator Y3Fe5O12. The authors found a magnetoresistance in Pt displaying a hysteresis corresponding to the coercive field of Y3Fe5O12, consistent with the findings of other groups. While the latter interpreted their data in terms of the recently proposed spin-Hall magnetoresistance, Lu et al. attributed their observation to a magnetic proximity effect. To support this interpretation, they measured the X-ray magnetic circular dichroism (XMCD) at the Pt L2,3 edges from a Pt/Y3Fe5O12 sample with a Pt thickness of 1.5 nm and derived an average induced magnetic moment of 0.054 Bohr magnetons per Pt atom. This is contradictory to the results of our previous comprehensive XMCD study of three different Pt/Y3Fe5O12 samples with Pt thicknesses of 3, 7, and 10 nm from which we identified an upper limit of (0.003 +/- 0.001) Bohr magnetons per Pt [Geprägs et al., Appl. Phys. Lett. 101, 262407 (2012), arXiv:1211.0916]. △ Less

Submitted 18 July, 2013; originally announced July 2013.

Comments: 2 pages, 1 figure, 7 references

Laser molecular beam epitaxy of ZnO thin films and heterostructures

Authors: Matthias Opel, Stephan Geprägs, Matthias Althammer, Thomas Brenninger, Rudolf Gross

Abstract: We report on the growth of epitaxial ZnO thin films and ZnO based heterostructures on sapphire substrates by laser molecular beam epitaxy (MBE). We first discuss some recent developments in laser-MBE such as flexible ultra-violet laser beam optics, infrared laser heating systems or the use of atomic oxygen and nitrogen sources, and describe the technical realization of our advanced laser-MBE syste… ▽ More We report on the growth of epitaxial ZnO thin films and ZnO based heterostructures on sapphire substrates by laser molecular beam epitaxy (MBE). We first discuss some recent developments in laser-MBE such as flexible ultra-violet laser beam optics, infrared laser heating systems or the use of atomic oxygen and nitrogen sources, and describe the technical realization of our advanced laser-MBE system. Then we describe the optimization of the deposition parameters for ZnO films such as laser fluence and substrate temperature and the use of buffer layers. The detailed structural characterization by x-ray analysis and transmission electron microscopy shows that epitaxial ZnO thin films with high structural quality can be achieved, as demonstrated by a small out-of-plane and in-plane mosaic spread as well as the absence of rotational domains. We also demonstrate the heteroepitaxial growth of ZnO based multilayers as a prerequisite for spin transport experiments and the realization of spintronic devices. As an example, we show that TiN/Co/ZnO/Ni/Au multilayer stacks can be grown on (0001)-oriented sapphire with good structural quality of all layers and well defined in-plane epitaxial relations. △ Less

Submitted 5 July, 2013; originally announced July 2013.

Comments: 28 pages, 12 figures, 93 references

Journal ref: J. Phys. D: Appl. Phys. 47, 034002 (2014)

Converse Magnetoelectric Effects in Fe3O4/BaTiO3 Multiferroic Hybrids

Authors: S. Geprägs, D. Mannix, M. Opel, S. T. B. Goennenwein, R. Gross

Abstract: The quantitative understanding of converse magnetoelectric effects, i.e., the variation of the magnetization as a function of an applied electric field, in extrinsic multiferroic hybrids is a key prerequisite for the development of future spintronic devices. We present a detailed study of the strain-mediated converse magnetoelectric effect in ferrimagnetic Fe3O4 thin films on ferroelectric BaTiO3… ▽ More The quantitative understanding of converse magnetoelectric effects, i.e., the variation of the magnetization as a function of an applied electric field, in extrinsic multiferroic hybrids is a key prerequisite for the development of future spintronic devices. We present a detailed study of the strain-mediated converse magnetoelectric effect in ferrimagnetic Fe3O4 thin films on ferroelectric BaTiO3 substrates at room temperature. The experimental results are in excellent agreement with numerical simulation based on a two-region model. This demonstrates that the electric field induced changes of the magnetic state in the Fe3O4 thin film can be well described by the presence of two different ferroelastic domains in the BaTiO3 substrate, resulting in two differently strained regions in the Fe3O4 film with different magnetic properties. The two-region model allows to predict the converse magnetoelectric effects in multiferroic hybrid structures consisting of ferromagnetic thin films on ferroelastic substrates. △ Less

Submitted 23 April, 2013; originally announced April 2013.

Journal ref: Phys. Rev. B 88, 054412 (2013)

Quantitative study of the spin Hall magnetoresistance in ferromagnetic insulator/normal metal hybrids

Authors: Matthias Althammer, Sibylle Meyer, Hiroyasu Nakayama, Michael Schreier, Stephan Altmannshofer, Mathias Weiler, Hans Huebl, Stephan Geprägs, Matthias Opel, Rudolf Gross, Daniel Meier, Christoph Klewe, Timo Kuschel, Jan-Michael Schmalhorst, Günter Reiss, Liming Shen, Arunava Gupta, Yan-Ting Chen, Gerrit E. W. Bauer, Eiji Saitoh, Sebastian T. B. Goennenwein

Abstract: We experimentally investigate and quantitatively analyze the spin Hall magnetoresistance effect in ferromagnetic insulator/platinum and ferromagnetic insulator/nonferromagnetic metal/platinum hybrid structures. For the ferromagnetic insulator we use either yttrium iron garnet, nickel ferrite or magnetite and for the nonferromagnet copper or gold. The spin Hall magnetoresistance effect is theoretic… ▽ More We experimentally investigate and quantitatively analyze the spin Hall magnetoresistance effect in ferromagnetic insulator/platinum and ferromagnetic insulator/nonferromagnetic metal/platinum hybrid structures. For the ferromagnetic insulator we use either yttrium iron garnet, nickel ferrite or magnetite and for the nonferromagnet copper or gold. The spin Hall magnetoresistance effect is theoretically ascribed to the combined action of spin Hall and inverse spin Hall effect in the platinum metal top layer. It therefore should characteristically depend upon the orientation of the magnetization in the adjacent ferromagnet, and prevail even if an additional, nonferromagnetic metal layer is inserted between Pt and the ferromagnet. Our experimental data corroborate these theoretical conjectures. Using the spin Hall magnetoresistance theory to analyze our data, we extract the spin Hall angle and the spin diffusion length in platinum. For a spin mixing conductance of $4\times10^{14}\;\mathrm{Ω^{-1}m^{-2}}$ we obtain a spin Hall angle of $0.11\pm0.08$ and a spin diffusion length of $(1.5\pm0.5)\;\mathrm{nm}$ for Pt in our thin film samples. △ Less

Submitted 22 April, 2013; originally announced April 2013.

Comments: 16 pages, 9 figures

Journal ref: Phys. Rev. B 87, 224401 (2013)

Investigation of induced Pt magnetic polarization in Pt/Y3Fe5O12 bilayers

Authors: Stephan Geprägs, Sibylle Meyer, Stephan Altmannshofer, Matthias Opel, Fabrice Wilhelm, Andrei Rogalev, Rudolf Gross, Sebastian T. B. Goennenwein

Abstract: Using X-ray magnetic circular dichroism (XMCD) measurements, we explore the possible existence of induced magnetic moments in thin Pt films deposited onto the ferrimagnetic insulator yttrium iron garnet (Y3Fe5O12). Such a magnetic proximity effect is well established for Pt/ferromagnetic metal heterostructures. Indeed, we observe a clear XMCD signal at the Pt L3 edge in Pt/Fe bilayers, while no su… ▽ More Using X-ray magnetic circular dichroism (XMCD) measurements, we explore the possible existence of induced magnetic moments in thin Pt films deposited onto the ferrimagnetic insulator yttrium iron garnet (Y3Fe5O12). Such a magnetic proximity effect is well established for Pt/ferromagnetic metal heterostructures. Indeed, we observe a clear XMCD signal at the Pt L3 edge in Pt/Fe bilayers, while no such signal can be discerned in XMCD traces of Pt/Y3Fe5O12 bilayers. Integrating the XMCD signals allows to estimate an upper limit for the induced Pt magnetic polarization in Pt/Y3Fe5O12 bilayers. △ Less

Submitted 5 November, 2012; originally announced November 2012.

Journal ref: Appl. Phys. Lett. 101, 262407 (2012)

Spin Hall Magnetoresistance Induced by a Non-Equilibrium Proximity Effect

Authors: H. Nakayama, M. Althammer, Y. -T. Chen, K. Uchida, Y. Kajiwara, D. Kikuchi, T. Ohtani, S. Geprägs, M. Opel, S. Takahashi, R. Gross, G. E. W. Bauer, S. T. B. Goennenwein, E. Saitoh

Abstract: We report anisotropic magnetoresistance in Pt|Y3Fe5O12 bilayers. In spite of Y3Fe5O12 being a very good electrical insulator, the resistance of the Pt layer reflects its magnetization direction. The effect persists even when a Cu layer is inserted between Pt and Y3Fe5O12, excluding the contribution of induced equilibrium magnetization at the interface. Instead, we show that the effect originates f… ▽ More We report anisotropic magnetoresistance in Pt|Y3Fe5O12 bilayers. In spite of Y3Fe5O12 being a very good electrical insulator, the resistance of the Pt layer reflects its magnetization direction. The effect persists even when a Cu layer is inserted between Pt and Y3Fe5O12, excluding the contribution of induced equilibrium magnetization at the interface. Instead, we show that the effect originates from concerted actions of the direct and inverse spin Hall effects and therefore call it "spin Hall magnetoresistance." △ Less

Submitted 1 November, 2012; originally announced November 2012.

Comments: 20 pages, 7 figures (including Supplemental Material)

Journal ref: Phys. Rev. Lett. 110, 206601 (2013)

Giant Magnetoelastic Effects in BaTiO3-based Extrinsic Multiferroic Hybrids

Authors: Stephan Gepraegs, Matthias Opel, Sebastian T. B. Goennenwein, Rudolf Gross

Abstract: Extrinsic multiferroic hybrid structures consisting of ferromagnetic and ferroelectric layers elastically coupled to each other are promising due to their robust magnetoelectric effects even at room temperature. For a quantitative analysis of these magnetoelectric effects, a detailed knowledge of the piezoelectric and magnetoelastic behavior of both constituents as well as their mutual elastic cou… ▽ More Extrinsic multiferroic hybrid structures consisting of ferromagnetic and ferroelectric layers elastically coupled to each other are promising due to their robust magnetoelectric effects even at room temperature. For a quantitative analysis of these magnetoelectric effects, a detailed knowledge of the piezoelectric and magnetoelastic behavior of both constituents as well as their mutual elastic coupling is mandatory. We here report on a theoretical and experimental study of the magnetic behavior of BaTiO3-based extrinsic multiferroic structures. An excellent agreement between molecular dynamics simulations and the experiments was found for Fe50Co50/BaTiO3 and Ni/BaTiO3 hybrid structures. This demonstrates that the magnetic behavior of extrinsic multiferroic hybrid structures can be determined by means of ab-initio calculations, allowing for the design of novel multiferroic hybrids. △ Less

Submitted 23 August, 2012; originally announced August 2012.

Journal ref: Phys. Rev. B 86, 134432 (2012)

Spin transport and spin dephasing in zinc oxide

Authors: Matthias Althammer, Eva-Maria Karrer-Müller, Sebastian T. B. Goennenwein, Matthias Opel, Rudolf Gross

Abstract: The wide bandgap semiconductor ZnO is interesting for spintronic applications because of its small spin-orbit coupling implying a large spin coherence length. Utilizing vertical spin valve devices with ferromagnetic electrodes (TiN/Co/ZnO/Ni/Au), we study the spin-polarized transport across ZnO in all-electrical experiments. The measured magnetoresistance agrees well with the prediction of a two s… ▽ More The wide bandgap semiconductor ZnO is interesting for spintronic applications because of its small spin-orbit coupling implying a large spin coherence length. Utilizing vertical spin valve devices with ferromagnetic electrodes (TiN/Co/ZnO/Ni/Au), we study the spin-polarized transport across ZnO in all-electrical experiments. The measured magnetoresistance agrees well with the prediction of a two spin channel model with spin-dependent interface resistance. Fitting the data yields spin diffusion lengths of 10.8nm (2K), 10.7nm (10K), and 6.2nm (200K) in ZnO, corresponding to spin lifetimes of 2.6ns (2K), 2.0ns (10K), and 31ps (200K). △ Less

Submitted 27 August, 2012; v1 submitted 16 May, 2012; originally announced May 2012.

Comments: 7 pages, 5 figures; supplemental material added

Journal ref: Appl. Phys. Lett. 101, 082404 (2012)

Spintronic oxides grown by laser-MBE

Authors: Matthias Opel

Abstract: The recent study of oxides led to the discovery of several new fascinating physical phenomena. High-temperature superconductivity, colossal magnetoresistance, dilute magnetic do**, or multiferroicity were discovered and investigated in transition-metal oxides, representing a prototype class of strongly correlated electronic systems. This development was accompanied by an enormous progress regard… ▽ More The recent study of oxides led to the discovery of several new fascinating physical phenomena. High-temperature superconductivity, colossal magnetoresistance, dilute magnetic do**, or multiferroicity were discovered and investigated in transition-metal oxides, representing a prototype class of strongly correlated electronic systems. This development was accompanied by an enormous progress regarding thin film fabrication. Within the past two decades, epitaxial thin films with crystalline quality approaching semiconductor standards became available using laser molecular beam epitaxy. This evolution is reviewed, particularly with emphasis on transition-metal oxide thin films, their versatile physical properties, and their impact on the field of spintronics. First, the physics of ferromagnetic half-metallic oxides, such as the doped manganites, the double perovskites and magnetite is presented together with possible applications based on magnetic tunnel junctions. Second, the wide bandgap semiconductor zinc oxide is discussed particularly with regard to the controversy of dilute magnetic do** with transition-metal ions and the possibility of realizing p-type conductivity. Third, the field of oxide multiferroics is presented with the recent developments in single-phase multiferroic thin film perovskites as well as in composite multiferroic hybrids. △ Less

Submitted 4 December, 2011; originally announced December 2011.

Comments: 57 pages, 28 figures, 388 references, to appear in J. Phys. D: Appl. Phys

Journal ref: Journal of Physics D: Applied Physics 45, 033001 (2012)

Local charge and spin currents in magnetothermal landscapes

Authors: Mathias Weiler, Matthias Althammer, Franz D. Czeschka, Hans Huebl, Martin S. Wagner, Matthias Opel, Inga-Mareen Imort, Günter Reiss, Andy Thomas, Rudolf Gross, Sebastian T. B. Goennenwein

Abstract: A scannable laser beam is used to generate local thermal gradients in metallic (Co2FeAl) or insulating (Y3Fe5O12) ferromagnetic thin films. We study the resulting local charge and spin currents that arise due to the anomalous Nernst effect (ANE) and the spin Seebeck effect (SSE), respectively. In the local ANE experiments, we detect the voltage in the Co2FeAl thin film plane as a function of the l… ▽ More A scannable laser beam is used to generate local thermal gradients in metallic (Co2FeAl) or insulating (Y3Fe5O12) ferromagnetic thin films. We study the resulting local charge and spin currents that arise due to the anomalous Nernst effect (ANE) and the spin Seebeck effect (SSE), respectively. In the local ANE experiments, we detect the voltage in the Co2FeAl thin film plane as a function of the laser spot position and external magnetic field magnitude and orientation. The local SSE effect is detected in a similar fashion by exploiting the inverse spin Hall effect in a Pt layer deposited on top of the Y3Fe5O12. Our findings establish local thermal spin and charge current generation as well as spin caloritronic domain imaging. △ Less

Submitted 18 October, 2011; originally announced October 2011.

Journal ref: Phys. Rev. Lett. 108, 106602 (2012)

Novel Multifunctional Materials Based on Oxide Thin Films and Artificial Heteroepitaxial Multilayers

Authors: Matthias Opel, Stephan Gepraegs, Edwin P. Menzel, Andrea Nielsen, Daniel Reisinger, Karl-Wilhelm Nielsen, Andreas Brandlmaier, Franz D. Czeschka, Matthias Althammer, Mathias Weiler, Sebastian T. B. Goennenwein, Juergen Simon, Matthias Svete, Wentao Yu, Sven-Martin Huehne, Werner Mader, Rudolf Gross

Abstract: Transition metal oxides show fascinating physical properties such as high temperature superconductivity, ferro- and antiferromagnetism, ferroelectricity or even multiferroicity. The enormous progress in oxide thin film technology allows us to integrate these materials with semiconducting, normal conducting, dielectric or non-linear optical oxides in complex oxide heterostructures, providing the ba… ▽ More Transition metal oxides show fascinating physical properties such as high temperature superconductivity, ferro- and antiferromagnetism, ferroelectricity or even multiferroicity. The enormous progress in oxide thin film technology allows us to integrate these materials with semiconducting, normal conducting, dielectric or non-linear optical oxides in complex oxide heterostructures, providing the basis for novel multi-functional materials and various device applications. Here, we report on the combination of ferromagnetic, semiconducting, metallic, and dielectric materials properties in thin films and artificial heterostructures using laser molecular beam epitaxy. We discuss the fabrication and characterization of oxide-based ferromagnetic tunnel junctions, transition metal-doped semiconductors, intrinsic multiferroics, and artificial ferroelectric/ferromagetic heterostructures - the latter allow for the detailed study of strain effects, forming the basis of spin-mechanics. For characterization we use X-ray diffraction, SQUID magnetometry, magnetotransport measurements, and advanced methods of transmission electron microscopy with the goal to correlate macroscopic physical properties with the microstructure of the thin films and heterostructures. △ Less

Submitted 22 July, 2010; v1 submitted 25 January, 2010; originally announced January 2010.

Comments: 21 pages, 21 figures (2 figures added, typos corrected)

Report number: DFG priority program 1157

Journal ref: Phys. Status Solidi A 208, 232-251 (2011)

Magnetic interference patterns in 0-Pi SIFS Josephson junctions: effects of asymmetry between 0 and Pi regions

Authors: M. Kemmler, M. Weides, M. Weiler, M. Opel, S. T. B. Goennenwein, A. S. Vasenko, A. A. Golubov, H. Kohlstedt, D. Koelle, R. Kleiner, E. Goldobin

Abstract: We present a detailed analysis of the dependence of the critical current I_c on the magnetic field B of 0, Pi, and 0-Pi superconductor-insulator-ferromagnet-superconductor Josephson junctions. I_c(B) of the 0 and Pi junction closely follows a Fraunhofer pattern, indicating a homogeneous critical current density j_c(x). The maximum of I_c(B) is slightly shifted along the field axis, pointing to a… ▽ More We present a detailed analysis of the dependence of the critical current I_c on the magnetic field B of 0, Pi, and 0-Pi superconductor-insulator-ferromagnet-superconductor Josephson junctions. I_c(B) of the 0 and Pi junction closely follows a Fraunhofer pattern, indicating a homogeneous critical current density j_c(x). The maximum of I_c(B) is slightly shifted along the field axis, pointing to a small remanent in-plane magnetization of the F-layer along the field axis. I_c(B) of the 0-Pi junction exhibits the characteristic central minimum. I_c however has a finite value here, due to an asymmetry of j_c in the 0 and Pi part. In addition, this I_c(B) exhibits asymmetric maxima and bumped minima. To explain these features in detail, flux penetration being different in the 0 part and the Pi part needs to be taken into account. We discuss this asymmetry in relation to the magnetic properties of the F-layer and the fabrication technique used to produce the 0-Pi junctions. △ Less

Submitted 30 October, 2009; originally announced October 2009.

Journal ref: Phys. Rev. B 81, 054522 (2010)

Giant magnetic anisotropy changes in Sr2CrReO6 thin films on BaTiO3

Authors: F. D. Czeschka, S. Gepraegs, M. Opel, S. T. B. Goennenwein, R. Gross

Abstract: The integration of ferromagnetic and ferroelectric materials into hybrid heterostructures yields multifunctional systems with improved or novel functionality. We here report on the structural, electronic and magnetic properties of the ferromagnetic double perovskite Sr2CrReO6, grown as epitaxial thin film onto ferroelectric BaTiO3. As a function of temperature, the crystal-structure of BaTiO3 un… ▽ More The integration of ferromagnetic and ferroelectric materials into hybrid heterostructures yields multifunctional systems with improved or novel functionality. We here report on the structural, electronic and magnetic properties of the ferromagnetic double perovskite Sr2CrReO6, grown as epitaxial thin film onto ferroelectric BaTiO3. As a function of temperature, the crystal-structure of BaTiO3 undergoes phase transitions, which induce qualitative changes in the magnetic anisotropy of the ferromagnet. We observe abrupt changes in the coercive field of up to 1.2T along with resistance changes of up to 6.5%. These results are attributed to the high sensitivity of the double perovskites to mechanical deformation. △ Less

Submitted 12 June, 2009; originally announced June 2009.

Comments: 3 figures

Journal ref: Appl. Phys. Lett. 95, 062508 (2009)

Epitaxial growth and magnetic properties of Sr2CrReO6 thin films

Authors: S. Gepraegs, F. D. Czeschka, M. Opel, S. T. B. Goennenwein, W. Yu, W. Mader, R. Gross

Abstract: The double perovskite Sr2CrReO6 is an interesting material for spintronics, showing ferrimagnetism up to 635 K with a predicted high spin polarization of about 86%. We fabricated Sr2CrReO6 epitaxial films by pulsed laser deposition on (001)-oriented SrTiO3 substrates. Phase-pure films with optimum crystallographic and magnetic properties were obtained by growing at a substrate temperature of 700… ▽ More The double perovskite Sr2CrReO6 is an interesting material for spintronics, showing ferrimagnetism up to 635 K with a predicted high spin polarization of about 86%. We fabricated Sr2CrReO6 epitaxial films by pulsed laser deposition on (001)-oriented SrTiO3 substrates. Phase-pure films with optimum crystallographic and magnetic properties were obtained by growing at a substrate temperature of 700 degree C in pure O2 of 6.6x10-4 mbar. The films are c-axis oriented, coherently strained, and show less than 20% anti-site defects. The magnetization curves reveal high saturation magnetization of 0.8 muB per formula unit and high coercivity of 1.1 T, as well as a strong magnetic anisotropy. △ Less

Submitted 28 January, 2009; originally announced January 2009.

Comments: accepted for publication

Journal ref: JMMM 321, 2001-2004 (2009)

Voltage controlled inversion of magnetic anisotropy in a ferromagnetic thin film at room temperature

Authors: M. Weiler, A. Brandlmaier, S. Gepraegs, M. Althammer, M. Opel, C. Bihler, H. Huebl, M. S. Brandt, R. Gross, S. T. B. Goennenwein

Abstract: The control of magnetic properties by means of an electric field is an important aspect in magnetism and magnetoelectronics. We here utilize magnetoelastic coupling in ferromagnetic/piezoelectric hybrids to realize a voltage control of magnetization orientation at room temperature. The samples consist of polycrystalline nickel thin films evaporated onto piezoelectric actuators. The magnetic prop… ▽ More The control of magnetic properties by means of an electric field is an important aspect in magnetism and magnetoelectronics. We here utilize magnetoelastic coupling in ferromagnetic/piezoelectric hybrids to realize a voltage control of magnetization orientation at room temperature. The samples consist of polycrystalline nickel thin films evaporated onto piezoelectric actuators. The magnetic properties of these multifunctional hybrids are investigated at room temperature as a function of the voltage controlled stress exerted by the actuator on the Ni film. Ferromagnetic resonance spectroscopy shows that the magnetic easy axis in the Ni film plane is rotated by 90 degree upon changing the polarity of the voltage Vp applied to the actuator. In other words, the in-plane uniaxial magnetic anisotropy of the Ni film can be inverted via the application of an appropriate voltage Vp. Using SQUID magnetometry, the evolution of the magnetization vector is recorded as a function of Vp and of the external magnetic field. Changing Vp allows to reversibly adjust the magnetization orientation in the Ni film plane within a range of approximately 70 degree. All magnetometry data can be quantitatively understood in terms of the magnetic free energy determined from the ferromagnetic resonance experiments. These results demonstrate that magnetoelastic coupling in hybrid structures indeed is a viable option to control magnetization orientation in technologically relevant ferromagnetic thin films at room temperature. △ Less

Submitted 2 October, 2008; originally announced October 2008.

Journal ref: New J. Phys. 11 013021 (2009)

Epitaxial Zn(x)Fe(3-x)O(4) Thin Films: A Spintronic Material with Tunable Electrical and Magnetic Properties

Authors: Deepak Venkateshvaran, Matthias Althammer, Andrea Nielsen, Stephan Gepraegs, M. S. Ramachandra Rao, Sebastian T. B. Goennenwein, Matthias Opel, Rudolf Gross

Abstract: The ferrimagnetic spinel oxide Zn(x)Fe(3-x)O(4) combines high Curie temperature and spin polarization with tunable electrical and magnetic properties, making it a promising functional material for spintronic devices. We have grown epitaxial thin films with 0<=x<=0.9 on MgO(001) substrates with excellent structural properties both in pure Ar atmosphere and an Ar/O2 mixture by laser molecular beam… ▽ More The ferrimagnetic spinel oxide Zn(x)Fe(3-x)O(4) combines high Curie temperature and spin polarization with tunable electrical and magnetic properties, making it a promising functional material for spintronic devices. We have grown epitaxial thin films with 0<=x<=0.9 on MgO(001) substrates with excellent structural properties both in pure Ar atmosphere and an Ar/O2 mixture by laser molecular beam epitaxy. We find that the electrical conductivity and the saturation magnetization can be tuned over a wide range during growth. Our extensive characterization of the films provides a clear picture of the underlying physics of this spinel ferrimagnet with antiparallel Fe moments on the A and B sublattice: (i) Zn substitution removes both Fe3+ moments from the A sublattice and itinerant charge carriers from the B sublattice, (ii) growth in finite oxygen partial pressure generates Fe vacancies on the B sublattice also removing itinerant charge carriers, and (iii) application of both Zn substitution and excess oxygen results in a compensation effect as Zn substitution partially removes the Fe vacancies. A decrease (increase) of charge carrier density results in a weakening (strengthening) of double exchange and thereby a decrease (increase) of conductivity and the saturation magnetization. This scenario is confirmed by the observation that the saturation magnetization scales with the longitudinal conductivity. The combination of tailored films with semiconductor materials such as ZnO in multi-functional heterostructures seems to be particularly appealing. △ Less

Submitted 20 March, 2009; v1 submitted 27 August, 2008; originally announced August 2008.

Comments: 13 pages, 8 figures, Hall effect data removed, anti-phase boundary discussion added, accepted for publication in PRB79 (2009)

Journal ref: Phys. Rev. B 79,134405 (2009)

All Oxide Ferromagnet/Semiconductor Epitaxial Heterostructures

Authors: A. Nielsen, A. Brandlmaier, M. Althammer, W. Kaiser, M. Opel, J. Simon, W. Mader, S. T. B. Goennenwein, R. Gross

Abstract: Oxide based ferromagnet/semiconductor heterostructures offer substantial advantages for spin electronics. We have grown (111) oriented Fe3O4 thin films and Fe3O4/ZnO heterostructures on ZnO(0001) and Al2O3(0001) substrates by pulsed laser deposition. High quality crystalline films with mosaic spread as small as 0.03 degree, sharp interfaces, and rms surface roughness of 0.3 nm were achieved. Mag… ▽ More Oxide based ferromagnet/semiconductor heterostructures offer substantial advantages for spin electronics. We have grown (111) oriented Fe3O4 thin films and Fe3O4/ZnO heterostructures on ZnO(0001) and Al2O3(0001) substrates by pulsed laser deposition. High quality crystalline films with mosaic spread as small as 0.03 degree, sharp interfaces, and rms surface roughness of 0.3 nm were achieved. Magnetization measurements show clear ferromagnetic behavior of the magnetite layers with a saturation magnetization of 3.2 muB/f.u. at 300 K. Our results demonstrate that the Fe3O4/ZnO system is an intriguing and promising candidate for the realization of multi-functional heterostructures. △ Less

Submitted 16 August, 2008; originally announced August 2008.

Comments: 4 pages, 3 figures

Journal ref: Appl. Phys. Lett. 93, 162510 (2008)

Anomalous Hall Effect in Magnetite: Universal Scaling Relation Between Hall and Longitudinal Conductivity in Low-Conductivity Ferromagnets

Authors: Deepak Venkateshvaran, Wolfgang Kaiser, Andrea Boger, Matthias Althammer, M. S. Ramachandra Rao, Sebastian T. B. Goennenwein, Matthias Opel, Rudolf Gross

Abstract: The anomalous Hall effect (AHE) has been studied systematically in the low-conductivity ferromagnetic oxide Fe$_{3-x}$Zn$_x$O$_4$ with $x = 0$, 0.1, and 0.5. We used (001), (110), and (111) oriented epitaxial Fe$_{3-x}$Zn$_x$O$_4$ films grown on MgO and sapphire substrates in different oxygen partial pressure to analyze the dependence of the AHE on crystallographic orientation, Zn content, strai… ▽ More The anomalous Hall effect (AHE) has been studied systematically in the low-conductivity ferromagnetic oxide Fe$_{3-x}$Zn$_x$O$_4$ with $x = 0$, 0.1, and 0.5. We used (001), (110), and (111) oriented epitaxial Fe$_{3-x}$Zn$_x$O$_4$ films grown on MgO and sapphire substrates in different oxygen partial pressure to analyze the dependence of the AHE on crystallographic orientation, Zn content, strain state, and oxygen deficiency. Despite substantial differences in the magnetic properties and magnitudes of the anomalous Hall conductivity $σ_{xy}^{\rm AHE}$ and the longitudinal conductivity $σ_{xx}$ over several orders of magnitude, a universal scaling relation $σ_{xy}^{\rm AHE} \propto σ_{xx}^α$ with $α= 1.69 \pm 0.08$ was found for all investigated samples. Our results are in agreement with recent theoretical and experimental findings for ferromagnetic metals in the dirty limit, where transport is by metallic conduction. We find the same scaling relation for magnetite, where hop** transport prevails. The fact that this relation is independent of crystallographic orientation, Zn content, strain state, and oxygen deficiency suggests that it is universal and particularly does not depend on the nature of the transport mechanism. △ Less

Submitted 8 May, 2008; originally announced May 2008.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. B 78, 092405 (2008)

Piezo-control of magnetic anisotropy in GaMnAs: Reversible manipulation of magnetization orientation and irreversible magnetization switching

Authors: C. Bihler, M. Althammer, A. Brandlmaier, S. Gepraegs, M. Weiler, M. Opel, W. Schoch, W. Limmer, R. Gross, M. S. Brandt, S. T. B. Goennenwein

Abstract: We have investigated the magnetic properties of a piezoelectric actuator/ferromagnetic semiconductor hybrid structure. Using a GaMnAs epilayer as the ferromagnetic semiconductor and applying the piezo-stress along its [110] direction, we quantify the magnetic anisotropy as a function of the voltage V_p applied to the piezoelectric actuator using anisotropic magnetoresistance techniques. We find… ▽ More We have investigated the magnetic properties of a piezoelectric actuator/ferromagnetic semiconductor hybrid structure. Using a GaMnAs epilayer as the ferromagnetic semiconductor and applying the piezo-stress along its [110] direction, we quantify the magnetic anisotropy as a function of the voltage V_p applied to the piezoelectric actuator using anisotropic magnetoresistance techniques. We find that the easy axis of the strain-induced uniaxial magnetic anisotropy contribution can be inverted from the [110] to the [1-10] direction via the application of appropriate voltages V_p. At T=5K the magnetoelastic term is a minor contribution to the magnetic anisotropy. Nevertheless, we show that the switching fields of rho(H) loops are shifted as a function of V_p at this temperature. At 50K - where the magnetoelastic term dominates the magnetic anisotropy - we are able to tune the magnetization orientation by about 70 degree solely by means of the electrical voltage V_p applied. Furthermore, we derive the magnetostrictive constant lambda_111 as a function of temperature and find values consistent with earlier results. We argue that the piezo-voltage control of magnetization orientation is directly transferable to other ferromagnetic/piezoelectric hybrid structures, paving the way to innovative multifunctional device concepts. As an example, we demonstrate piezo-voltage induced irreversible magnetization switching at T=40K, which constitutes the basic principle of a nonvolatile memory element. △ Less

Submitted 8 April, 2008; originally announced April 2008.

Journal ref: Phys. Rev. B 78, 045203 (2008)

Nanosized superparamagnetic precipitates in cobalt-doped ZnO

Authors: Matthias Opel, Karl-Wilhelm Nielsen, Sebastian Bauer, Sebastian T. B. Goennenwein, Rudolf Gross, Julio C. Cezar, Dieter Schmeisser, Juergen Simon, Werner Mader

Abstract: The existence of semiconductors exhibiting long-range ferromagnetic ordering at room temperature still is controversial. One particularly important issue is the presence of secondary magnetic phases such as clusters, segregations, etc... These are often tedious to detect, leading to contradictory interpretations. We show that in our cobalt doped ZnO films grown homoepitaxially on single crystall… ▽ More The existence of semiconductors exhibiting long-range ferromagnetic ordering at room temperature still is controversial. One particularly important issue is the presence of secondary magnetic phases such as clusters, segregations, etc... These are often tedious to detect, leading to contradictory interpretations. We show that in our cobalt doped ZnO films grown homoepitaxially on single crystalline ZnO substrates the magnetism unambiguously stems from metallic cobalt nano-inclusions. The magnetic behavior was investigated by SQUID magnetometry, x-ray magnetic circular dichroism, and AC susceptibility measurements. The results were correlated to a detailed microstructural analysis based on high resolution x-ray diffraction, transmission electron microscopy, and electron-spectroscopic imaging. No evidence for carrier mediated ferromagnetic exchange between diluted cobalt moments was found. In contrast, the combined data provide clear evidence that the observed room temperature ferromagnetic-like behavior originates from nanometer sized superparamagnetic metallic cobalt precipitates. △ Less

Submitted 19 May, 2008; v1 submitted 26 March, 2008; originally announced March 2008.

Comments: 20 pages, 6 figures; details about background subtraction added to section III. (XMCD)

Journal ref: Eur. Phys. J. B 63, 437 (2008)

Suppression of hole-mediated ferromagnetism in GaMnP by hydrogen

Authors: C. Bihler, M. Kraus, M. S. Brandt, S. T. B. Goennenwein, M. Opel, M. A. Scarpulla, R. Farshchi, O. D. Dubon

Abstract: We report the successful passivation of the Mn acceptors in GaMnP upon exposure to a remote dc hydrogen plasma. The as-grown films are non-metallic and ferromagnetic with a Curie temperature of T_C=55K. After hydrogenation the sample resistivity increases by approximately three orders of magnitude at room temperature and six orders of magnitude at 25 K. Furthermore, the hydrogenated samples are… ▽ More We report the successful passivation of the Mn acceptors in GaMnP upon exposure to a remote dc hydrogen plasma. The as-grown films are non-metallic and ferromagnetic with a Curie temperature of T_C=55K. After hydrogenation the sample resistivity increases by approximately three orders of magnitude at room temperature and six orders of magnitude at 25 K. Furthermore, the hydrogenated samples are paramagnetic, which is evidenced by a magnetization curve at 5 K that is best described by a Brillouin function with g=2 and J=5/2 expected for Mn atoms in the 3d^5 configuration. These observations unambiguously proof that the ferromagnetism is carrier-mediated also in GaMnP. △ Less

Submitted 18 July, 2007; originally announced July 2007.

Journal ref: J. Appl. Phys. 104, 013908 (2008)

Magnetocrystalline anisotropy and magnetization reversal in GaMnP synthesized by ion implantation and pulsed-laser melting

Authors: C. Bihler, M. Kraus, H. Huebl, M. S. Brandt, S. T. B. Goennenwein, M. Opel, M. A. Scarpulla, P. R. Stone, R. Farshchi, O. D. Dubon

Abstract: We report the observation of ferromagnetic resonance (FMR) and the determination of the magnetocrystalline anisotropy in (100)-oriented single-crystalline thin film samples of GaMnP with x=0.042. The contributions to the magnetic anisotropy were determined by measuring the angular- and the temperature-dependencies of the FMR resonance fields and by superconducting quantum interference device mag… ▽ More We report the observation of ferromagnetic resonance (FMR) and the determination of the magnetocrystalline anisotropy in (100)-oriented single-crystalline thin film samples of GaMnP with x=0.042. The contributions to the magnetic anisotropy were determined by measuring the angular- and the temperature-dependencies of the FMR resonance fields and by superconducting quantum interference device magnetometry. The largest contribution to the anisotropy is a uniaxial component perpendicular to the film plane; however, a negative contribution from cubic anisotropy is also found. Additional in-plane uniaxial components are observed at low temperatures, which lift the degeneracy between the in-plane [011] and [01-1] directions as well as between the in-plane [010] and [001] directions. Near T=5K, the easy magnetization axis is close to the in-plane [01-1] direction. All anisotropy parameters decrease with increasing temperature and disappear above the Curie temperature T_C. A consistent picture of the magnetic anisotropy of ferromagnetic GaMnP emerges from the FMR and magnetometry data. The latter can be successfully modeled when both coherent magnetization rotation and magnetic domain nucleation are considered. △ Less

Submitted 23 March, 2007; originally announced March 2007.

Journal ref: Phys. Rev. B 75, 214419 (2007)

Magnetic and structural properties of GeMn films: precipitation of intermetallic nanomagnets

Authors: S. Ahlers, D. Bougeard, N. Sircar, G. Abstreiter, A. Trampert, M. Opel, R. Gross

Abstract: We present a comprehensive study relating the nanostructure of Ge_0.95Mn_0.05 films to their magnetic properties. The formation of ferromagnetic nanometer sized inclusions in a defect free Ge matrix fabricated by low temperature molecular beam epitaxy is observed down to substrate temperatures T_S as low as 70 deg. Celsius. A combined transmission electron microscopy (TEM) and electron energy-lo… ▽ More We present a comprehensive study relating the nanostructure of Ge_0.95Mn_0.05 films to their magnetic properties. The formation of ferromagnetic nanometer sized inclusions in a defect free Ge matrix fabricated by low temperature molecular beam epitaxy is observed down to substrate temperatures T_S as low as 70 deg. Celsius. A combined transmission electron microscopy (TEM) and electron energy-loss spectroscopy (EELS) analysis of the films identifies the inclusions as precipitates of the ferromagnetic compound Mn_5Ge_3. The volume and amount of these precipitates decreases with decreasing T_S. Magnetometry of the films containing precipitates reveals distinct temperature ranges: Between the characteristic ferromagnetic transition temperature of Mn_5Ge_3 at approximately room temperature and a lower, T_S dependent blocking temperature T_B the magnetic properties are dominated by superparamagnetism of the Mn_5Ge_3 precipitates. Below T_B, the magnetic signature of ferromagnetic precipitates with blocked magnetic moments is observed. At the lowest temperatures, the films show features characteristic for a metastable state. △ Less

Submitted 9 November, 2006; originally announced November 2006.

Comments: accepted for publication in Phys. Rev. B 74 (01.12.2006). High resolution images ibidem

Spin-glass-like behavior of Ge:Mn

Authors: C. Jaeger, C. Bihler, T. Vallaitis, S. T. B. Goennenwein, M. Opel, R. Gross, M. S. Brandt

Abstract: We present a detailed study of the magnetic properties of low-temperature-molecular-beam-epitaxy grown Ge:Mn dilute magnetic semiconductor films. We find strong indications for a frozen state of Ge_{1-x}Mn_{x}, with freezing temperatures of T_f=12K and T_f=15K for samples with x=0.04 and x=0.2, respectively, determined from the difference between field-cooled and zero-field-cooled magnetization.… ▽ More We present a detailed study of the magnetic properties of low-temperature-molecular-beam-epitaxy grown Ge:Mn dilute magnetic semiconductor films. We find strong indications for a frozen state of Ge_{1-x}Mn_{x}, with freezing temperatures of T_f=12K and T_f=15K for samples with x=0.04 and x=0.2, respectively, determined from the difference between field-cooled and zero-field-cooled magnetization. For Ge_{0.96}Mn_{0.04}, ac susceptibility measurements show a peak around T_f, with the peak position T'_f shifting as a function of the driving frequency f by Delta T_f' / [T_f' Delta log f] ~ 0.06, whereas for sample Ge_{0.8}Mn_{0.2} a more complicated behavior is observed. Furthermore, both samples exhibit relaxation effects of the magnetization after switching the magnitude of the external magnetic field below T_f which are in qualitative agreement with the field- and zero-field-cooled magnetization measurements. These findings consistently show that Ge:Mn exhibits a frozen magnetic state at low temperatures and that it is not a conventional ferromagnet. △ Less

Submitted 24 July, 2006; v1 submitted 3 April, 2006; originally announced April 2006.

Comments: Revised version contains extended interpretation of experimental data

Journal ref: Phys. Rev. B 74, 045330 (2006)

X-ray magnetic circular dichroism study of Re 5d magnetism in Sr2CrReO6

Authors: P. Majewski, S. Gepraegs, O. Sanganas, M. Opel, R. Gross, F. Wilhelm, A. Rogalev, L. Alff

Abstract: We have measured Re 5d spin and orbital magnetic moments in the ferrimagnetic double perovskite Sr2CrReO6 by X-ray magnetic circular dichroism at the L_{2,3} edges. In fair agreement with recent band-structure calculations [Vaitheeswaran et. al., Ref 1], at the Re site a large 5d spin magnetic moment of -0.68 mu_B and a considerable orbital moment of +0.25 mu_B have been detected. We found that… ▽ More We have measured Re 5d spin and orbital magnetic moments in the ferrimagnetic double perovskite Sr2CrReO6 by X-ray magnetic circular dichroism at the L_{2,3} edges. In fair agreement with recent band-structure calculations [Vaitheeswaran et. al., Ref 1], at the Re site a large 5d spin magnetic moment of -0.68 mu_B and a considerable orbital moment of +0.25 mu_B have been detected. We found that the Curie temperature of the double perovskites A2BB'O6 scales with the spin magnetic moment of the 'non-magnetic' B' ion. △ Less

Submitted 3 February, 2006; originally announced February 2006.

Comments: 3 pages, 3 figures

Journal ref: Appl. Phys. Lett. 87, 202503 (2005)

Magnetic moments of W 5d in Ca2CrWO6 and Sr2CrWO6 double perovskites

Authors: P. Majewski, S. Gepraegs, A. Boger, M. Opel, A. Erb, R. Gross, G. Vaitheeswaran, V. Kanchana, A. Delin, F. Wilhelm, A. Rogalev, L. Alff

Abstract: We have investigated the magnetic moment of the W ion in the ferrimagnetic double perovskites Sr2CrWO6 and Ca2CrWO6 by X-ray magnetic circular dichroism (XMCD) at the W L(2,3) edges. In both compounds a finite negative spin and positive orbital magnetic moment was detected. The experimental results are in good agreement with band-structure calculations for (Sr/Ca)2CrWO6 using the full-potential… ▽ More We have investigated the magnetic moment of the W ion in the ferrimagnetic double perovskites Sr2CrWO6 and Ca2CrWO6 by X-ray magnetic circular dichroism (XMCD) at the W L(2,3) edges. In both compounds a finite negative spin and positive orbital magnetic moment was detected. The experimental results are in good agreement with band-structure calculations for (Sr/Ca)2CrWO6 using the full-potential linear muffin-tin orbital method. It is remarkable, that the magnetic ordering temperature, TC, is correlated with the magnetic moment at the 'non-magnetic' W atom. △ Less

Submitted 17 October, 2005; v1 submitted 2 June, 2005; originally announced June 2005.

Comments: accepted for publication

Journal ref: Phys. Rev. B 72, 132402 (2005)

Room temperature tunneling magnetoresistance in magnetite based junctions: Influence of tunneling barrier

Authors: D. Reisinger, P. Majewski, M. Opel, L. Alff, R. Gross

Abstract: Magnetite (Fe3O4) based tunnel junctions with turret/mesa structure have been investigated for different barrier materials (SrTiO3, NdGaO3, MgO, SiO2, and Al2O(3-x)). Junctions with a Ni counter electrode and an aluminium oxide barrier showed reproducibly a tunneling magnetoresistance (TMR) effect at room temperature of up to 5% with almost ideal switching behavior. This number only partially re… ▽ More Magnetite (Fe3O4) based tunnel junctions with turret/mesa structure have been investigated for different barrier materials (SrTiO3, NdGaO3, MgO, SiO2, and Al2O(3-x)). Junctions with a Ni counter electrode and an aluminium oxide barrier showed reproducibly a tunneling magnetoresistance (TMR) effect at room temperature of up to 5% with almost ideal switching behavior. This number only partially reflects the intrinsic high spin polarization of Fe3O4. It is considerably decreased due to an additional series resistance within the junction. Only SiO2 and Al2O(3-x) barriers provide magnetically decoupled electrodes as necessary for sharp switching. The observed decrease of the TMR effect as a function of increasing temperature is due to a decrease in spin polarization and an increase in spin-scattering in the barrier. Among the oxide half-metals magnetite has the potential to enhance the performance of TMR based devices. △ Less

Submitted 28 July, 2004; originally announced July 2004.

Study of Magnetic Properties of A_2B^'NbO_6 (A=Ba,Sr, (BaSr): and B^'=Fe and Mn) double perovskites

Authors: N. Rama, J. B. Philipp, M. Opel, K. Chandrasekaran, V. Sankaranarayanan, R. Gross, M. S. Ramachandra Rao

Abstract: We have studied the magnetic properties of Ba_2FeNbO_6 and Ba_2MnNbO_6. it is seen that Ba_2FeNbO_6 is an antiferromagnet with a weak ferromagnetic behaviour at 5K while Ba_2MnNbO_6 shows two magnetic transitions one at 45 K and the other at 12K. Electron spin resonance (ESR) measurements at room temperature show that the Mn compound does not show any Jahn-Teller distortion. It is also seen that… ▽ More We have studied the magnetic properties of Ba_2FeNbO_6 and Ba_2MnNbO_6. it is seen that Ba_2FeNbO_6 is an antiferromagnet with a weak ferromagnetic behaviour at 5K while Ba_2MnNbO_6 shows two magnetic transitions one at 45 K and the other at 12K. Electron spin resonance (ESR) measurements at room temperature show that the Mn compound does not show any Jahn-Teller distortion. It is also seen that the Neel temperature of the A_2FeNbO_6 (A=Ba,Sr, BaSr) compounds do not vary significantly. However variations in the average A-site ionic radius influence the formation of short range correlations that persist above T_N. △ Less

Submitted 24 May, 2004; originally announced May 2004.

Comments: 10 oages, 5 figures, MMM, to appear in J.Appl.Phys

Journal ref: J. Appl. Phys. v. 95, # 11, June 2004 (p.1-3)

Hall effect in Fe$_3$O$_4$ epitaxial thin films

Authors: D. Reisinger, P. Majewski, M. Opel, L. Alff, R. Gross

Abstract: Magnetite epitaxial thin films have been prepared by pulsed laser deposition at 340 C on MgO and Si substrates. One key result is that the thin film properties are almost identical to the properties of bulk material. For 40 - 50 nm thick films, the saturation magnetization and conductivity are respectively 453 emu/cm^3 and 225 1/(Ohm cm) at room temperature. The Verwey transition is at 117 K. Th… ▽ More Magnetite epitaxial thin films have been prepared by pulsed laser deposition at 340 C on MgO and Si substrates. One key result is that the thin film properties are almost identical to the properties of bulk material. For 40 - 50 nm thick films, the saturation magnetization and conductivity are respectively 453 emu/cm^3 and 225 1/(Ohm cm) at room temperature. The Verwey transition is at 117 K. The Hall effect indicates an electron concentration corresponding to 0.22 electrons per formula unit at room temperature. Normal and anomalous Hall effect both have a negative sign. △ Less

Submitted 6 April, 2004; v1 submitted 17 March, 2004; originally announced March 2004.