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Natural band alignment of $\rm MgO_{1-x}S_{x}$ alloys
Authors:
Yuichi Ota,
Kentaro Kaneko,
Takeyoshi Onuma,
Shizuo Fujita
Abstract:
We have calculated formation enthalpies, band gaps, and natural band alignment for $\rm MgO_{1-x}S_{x}$ alloys by first principles calculation based on density functional theory. The calculated formation enthalpies show that the $\rm MgO_{1-x}S_{x}$ alloys exhibit a large miscibilitygap, and a metastable region was found to occur when the S content was below 18% or over 87%. Effect of S incorporat…
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We have calculated formation enthalpies, band gaps, and natural band alignment for $\rm MgO_{1-x}S_{x}$ alloys by first principles calculation based on density functional theory. The calculated formation enthalpies show that the $\rm MgO_{1-x}S_{x}$ alloys exhibit a large miscibilitygap, and a metastable region was found to occur when the S content was below 18% or over 87%. Effect of S incorporation for band gaps of $\rm MgO_{1-x}S_{x}$ alloys shows large bowing parameter (b $ \simeq $ 13 eV) induced. The dependence of the band lineup of $\rm MgO_{1-x}S_{x}$ alloys on the S content by using two different methods, and the change in the energy position of valence band maximum (VBM) was larger than that of conduction band minimum. Based on the calculated VBM positions, we predicted that $\rm MgO_{1-x}S_{x}$ with S content 10 to 18% can be surface charge transfer do** by high electron affinity materials. The present work provides an example to design for p-type oxysulfide materials.
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Submitted 26 December, 2022;
originally announced December 2022.
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Crystal orientation dictated epitaxy of ultrawide bandgap 5.4-8.6 eV $α$-(AlGa)$_2$O$_3$ on m-plane sapphire
Authors:
Riena **no,
Celesta S. Chang,
Takeyoshi Onuma,
Yong** Cho,
Shao-Ting Ho,
Michael C. Cao,
Kevin Lee,
Vladimir Protasenko,
Darrell G. Schlom,
David A. Muller,
Huili G. Xing,
Debdeep Jena
Abstract:
Ultra-wide bandgap semiconductors are ushering in the next generation of high power electronics. The correct crystal orientation can make or break successful epitaxy of such semiconductors. Here it is discovered that single-crystalline layers of $α$-(AlGa)$_2$O$_3$ alloys spanning bandgaps of 5.4 - 8.6 eV can be grown by molecular beam epitaxy. The key step is found to be the use of m-plane sapphi…
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Ultra-wide bandgap semiconductors are ushering in the next generation of high power electronics. The correct crystal orientation can make or break successful epitaxy of such semiconductors. Here it is discovered that single-crystalline layers of $α$-(AlGa)$_2$O$_3$ alloys spanning bandgaps of 5.4 - 8.6 eV can be grown by molecular beam epitaxy. The key step is found to be the use of m-plane sapphire crystal. The phase transition of the epitaxial layers from the $α$- to the narrower bandgap $β$-phase is catalyzed by the c-plane of the crystal. Because the c-plane is orthogonal to the growth front of the m-plane surface of the crystal, the narrower bandgap pathways are eliminated, revealing a route to much wider bandgap materials with structural purity. The resulting energy bandgaps of the epitaxial layers span a range beyond the reach of all other semiconductor families, heralding the successful epitaxial stabilization of the largest bandgap materials family to date.
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Submitted 16 July, 2020; v1 submitted 7 July, 2020;
originally announced July 2020.
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Blue light-emitting diode based on ZnO
Authors:
Atsushi Tsukazaki,
Masashi Kubota,
Akira Ohtomo,
Takeyoshi Onuma,
Keita Ohtani,
Hideo Ohno,
Shigefusa F. Chichibu,
Masashi Kawasaki
Abstract:
A near-band-edge bluish electroluminescence (EL) band centered at around 440 nm was observed from ZnO p-i-n homojunction diodes through a semi-transparent electrode deposited on the p-type ZnO top layer. The EL peak energy coincided with the photoluminescence peak energy of an equivalent p-type ZnO layer, indicating that the electron injection from the n-type layer to the p-type layer dominates…
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A near-band-edge bluish electroluminescence (EL) band centered at around 440 nm was observed from ZnO p-i-n homojunction diodes through a semi-transparent electrode deposited on the p-type ZnO top layer. The EL peak energy coincided with the photoluminescence peak energy of an equivalent p-type ZnO layer, indicating that the electron injection from the n-type layer to the p-type layer dominates the current, giving rise to the radiative recombination in the p-type layer. The imbalance in charge injection is considered to originate from the lower majority carrier concentration in the p-type layer, which is one or two orders of magnitude lower than that in the n-type one. The current-voltage characteristics showed the presence of series resistance of several hundreds ohms, corresponding to the current spread resistance within the bottom n-type ZnO. The employment of conducting ZnO substrates may solve the latter problem.
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Submitted 22 April, 2005;
originally announced April 2005.
