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Nonreciprocal singularities dominated by the dissipative photon-magnon coupling in non-Hermitian systems
Authors:
Yongzhang Shi,
Chi Zhang,
Zhenhui Hao,
Changjun Jiang,
C. K. Ong,
Ke Xia,
Guozhi Chai
Abstract:
We investigated the magnon-photon coupling in an open cavity magnonic system, which leads to two different nonreciprocal singularities dominated by the dissipative coupling. One type of singularity is the exceptional point, which is just on the exceptional surface in parameter space. The other type of singularity is the bound state in the continuum discovered in the level-attraction-like coupling,…
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We investigated the magnon-photon coupling in an open cavity magnonic system, which leads to two different nonreciprocal singularities dominated by the dissipative coupling. One type of singularity is the exceptional point, which is just on the exceptional surface in parameter space. The other type of singularity is the bound state in the continuum discovered in the level-attraction-like coupling, which is above the exceptional surface. In experiment, we realized the two different singularities with nonreciprocity and selectivity in an open cavity magnonic system with suitable dissipation rating. Our results can be understood well with the pseudo-Hermitian theory of magnon-polariton system.
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Submitted 31 May, 2024; v1 submitted 28 May, 2024;
originally announced May 2024.
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Nonreciprocal ultrastrong magnon-photon coupling in the bandgap of photonic crystals
Authors:
Chi Zhang,
Zhenhui Hao,
Yongzhang Shi,
Changjun Jiang,
C. K. Ong,
Guozhi Chai
Abstract:
We observe a nonreciprocal ultrastrong magnon-photon coupling in the bandgap of photonic crystals by introducing a single crystal YIG cylinder into copper photonic crystals cavity as a point defect. The coupling strength reaches up to 1.18 GHz, which constitutes about 10.9% of the photon energy compared to the photon frequency around 10.8 GHz. It is fascinating that the coupling achieves unidirect…
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We observe a nonreciprocal ultrastrong magnon-photon coupling in the bandgap of photonic crystals by introducing a single crystal YIG cylinder into copper photonic crystals cavity as a point defect. The coupling strength reaches up to 1.18 GHz, which constitutes about 10.9% of the photon energy compared to the photon frequency around 10.8 GHz. It is fascinating that the coupling achieves unidirectional signal transmission in the whole bandgap. This study demonstrates the possibility of controlling nonreciprocal magnon-photon coupling by manipulating the structure of photonic crystals, providing new methods to investigate the influence of magnetic point defects on microwave signal transmission.
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Submitted 19 April, 2023;
originally announced April 2023.
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Nonreciprocal Multi-mode and Indirect Couplings in Cavity Magnonics
Authors:
Chi Zhang,
Chenglong Jia,
Yongzhang Shi,
Changjun Jiang,
Desheng Xue,
C. K. Ong,
Guozhi Chai
Abstract:
We investigate the magnon-photon couplings by employing a small magnet within an irregular resonant cavity, which leads to a desirable nonreciprocity with a big isolation ratio. Moreover, the higher-order couplings between the spin wave modes with the polarized photon modes also exhibit the nonreciprocity. These couplings between polarized photon and spin waves could be regarded as an indirect mul…
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We investigate the magnon-photon couplings by employing a small magnet within an irregular resonant cavity, which leads to a desirable nonreciprocity with a big isolation ratio. Moreover, the higher-order couplings between the spin wave modes with the polarized photon modes also exhibit the nonreciprocity. These couplings between polarized photon and spin waves could be regarded as an indirect multi-modes coupling between the ferromagnetic resonance (FMR) mode and spin wave mode magnons mediated by the cavity mode photons. We also derive a coupling matrix to predict the characteristics of this kind of indirect coupling. The existence of the indirect couplings broaden the field range of the nonreciprocity of the system. The achieved nonreciprocal multi-mode magnon-photon couplings in a single system offer a feasible method to improve the signal transmission quality.
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Submitted 31 March, 2021; v1 submitted 29 December, 2020;
originally announced December 2020.
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Spin galvanic effect at the conducting SrTiO3 surfaces
Authors:
Wenxu Zhang,
Qiuru Wang,
Bin Peng,
Huizhong Zeng,
Wee Tee Soh,
Chong Kim Ong,
Wanli Zhang
Abstract:
The (001) surface of SrTiO3 were transformed from insulating to conducting after Ar+ irradiation, producing a quasi two-dimensional electron gas (2DEG). This conducting surface layer can introduce Rashba spin orbital coupling due to the broken inversion symmetry normal to the plane. The spin splitting of such a surface has recently been demonstrated by magneto-resistance and angular resolved photo…
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The (001) surface of SrTiO3 were transformed from insulating to conducting after Ar+ irradiation, producing a quasi two-dimensional electron gas (2DEG). This conducting surface layer can introduce Rashba spin orbital coupling due to the broken inversion symmetry normal to the plane. The spin splitting of such a surface has recently been demonstrated by magneto-resistance and angular resolved photoemission spectra measurements. Here we present experiments evidencing a large spin-charge conversion at the surface. We use spin pum** to inject a spin current from NiFe film into the surface, and measure the resulting charge current. The results indicate that the Rashba effect at the surface can be used for efficient charge-spin conversion, and the large efficiency is due to the multi-d-orbitals and surface corrugation. It holds great promise in oxide spintronics.
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Submitted 2 October, 2016;
originally announced October 2016.
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Separating Inverse spin Hall voltage and spin rectification voltage by inverting spin injection direction
Authors:
Wenxu Zhang,
Bin Peng,
Fangbin Han,
Qiuru Wang,
Wee Tee Soh,
C K Ong,
Wanli Zhang
Abstract:
We develop a method for universally resolving the important issue of separating the inverse spin Hall effect (ISHE) from spin rectification effect (SRE) signal. This method is based on the consideration that the two effects depend on the spin injection direction: The ISHE is an odd function of the spin injection direction while the SRE is independent on it. Thus, inversion of the spin injection di…
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We develop a method for universally resolving the important issue of separating the inverse spin Hall effect (ISHE) from spin rectification effect (SRE) signal. This method is based on the consideration that the two effects depend on the spin injection direction: The ISHE is an odd function of the spin injection direction while the SRE is independent on it. Thus, inversion of the spin injection direction changes the ISHE voltage signal, while SRE voltage remains. It applies generally to analyzing the different voltage contributions without fitting them to special line shapes. This fast and simple method can be used in a wide frequency range, and has the flexibility of sample preparation.
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Submitted 6 December, 2015;
originally announced December 2015.
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Experimentally demonstrated an unidirectional electromagnetic cloak designed by topology optimization
Authors:
Lu Lan,
Fei Sun,
Yichao Liu,
C. K. Ong,
Yungui Ma
Abstract:
Electromagnetic invisible devices usually designed by transformation optics are rather complicated in material parameters and not suitable for general applications. Recently a topology optimized cloak based on level-set method was proposed to realize nearly perfect cloaking by Fujii et al [Appl. Phys. Lett. 102, 251106 (2013)]. In this work we experimentally implemented this idea and fabricated a…
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Electromagnetic invisible devices usually designed by transformation optics are rather complicated in material parameters and not suitable for general applications. Recently a topology optimized cloak based on level-set method was proposed to realize nearly perfect cloaking by Fujii et al [Appl. Phys. Lett. 102, 251106 (2013)]. In this work we experimentally implemented this idea and fabricated a unidirectional cloak with a relative large invisible region made of single dielectric material. Good cloaking performance was verified through measurement which consists very well with numerical simulation. The advantages and disadvantages of this optimization method are also discussed.
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Submitted 27 August, 2013;
originally announced August 2013.
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First experimental demonstration of an isotropic electromagnetic cloak with strict conformal map**
Authors:
Yungui Ma,
Yichao Liu,
Lu Lan,
Tiantian Wu,
Wei Jiang,
C. K. Ong,
Sailing He
Abstract:
In the past years quasi-conformal map** has been typically used to design broadband electromagnetic cloaks. However, this technique has some inherit practical limitations such as the lateral beam shift, rendering the device visible or difficult to hide a large object. In this work we circumvent these issues by using strict conformal map** to build the first isotropic cloak. Microwave near-fiel…
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In the past years quasi-conformal map** has been typically used to design broadband electromagnetic cloaks. However, this technique has some inherit practical limitations such as the lateral beam shift, rendering the device visible or difficult to hide a large object. In this work we circumvent these issues by using strict conformal map** to build the first isotropic cloak. Microwave near-field measurement shows that our device (with dielectric constant larger than unity everywhere) has a very good cloaking performance and a broad frequency response. The present dielectric approach could be technically extended to the fabrication of other conformal devices at higher frequencies.
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Submitted 22 May, 2013;
originally announced May 2013.
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Perfect imaging without negative refraction for microwaves
Authors:
Yun Gui Ma,
C. K. Ong,
Sahar Sahebdivan,
Tomas Tyc,
Ulf Leonhardt
Abstract:
We demonstrate perfect imaging in Maxwell's fish eye for microwaves. Our data show that the field of a line source is imaged with subwavelength resolution over superwavelength distances, provided the field is allowed to leave through passive outlets that play the role of a detector array in imaging.
We demonstrate perfect imaging in Maxwell's fish eye for microwaves. Our data show that the field of a line source is imaged with subwavelength resolution over superwavelength distances, provided the field is allowed to leave through passive outlets that play the role of a detector array in imaging.
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Submitted 15 July, 2010;
originally announced July 2010.
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An omnidirectional retroreflector based on the transmutation of dielectric singularities
Authors:
Yun Gui Ma,
C. K. Ong,
Tomas Tyc,
Ulf Leonhardt
Abstract:
In the field of transformation optics, metamaterials mimic the effect of coordinate transformations on electromagnetic waves, creating the illusion that the waves are propagating through a virtual space. Transforming space by appropriately designed materials makes devices possible that have been deemed impossible. In particular, transformation optics has led to the demonstration of invisibility…
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In the field of transformation optics, metamaterials mimic the effect of coordinate transformations on electromagnetic waves, creating the illusion that the waves are propagating through a virtual space. Transforming space by appropriately designed materials makes devices possible that have been deemed impossible. In particular, transformation optics has led to the demonstration of invisibility cloaking for microwaves, surface plasmons and infrared light. Here we report the achievement of another "impossible task". We implement, for microwaves, a device that would normally require a dielectric singularity, an infinity in the refractive index. We transmute a singularity in virtual space into a mere topological defect in a real metamaterial. In particular, we demonstrate an omnidirectional retroreflector, a device for faithfully reflecting images and for creating high visibility, from all directions. Our method is robust, potentially broadband and similar techniques could be applied for visible light.
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Submitted 29 June, 2009;
originally announced June 2009.
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Direct Observation of Photonic Jets and Corresponding Backscattering Enhancement at Microwave frequencies
Authors:
Li Zhao,
C. K. Ong
Abstract:
We experimentally verified the phenomena of photonic jets generated by plane-electromagnetic-wave-illuminated dielectric micro-cylinders with diameter comparable to the corresponding wavelength at microwave frequencies. Using a home-made 2D spatial field map** system, we carried out a point-by-point measurement of both phase and intensity of spatial electric field distribution inside and aroun…
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We experimentally verified the phenomena of photonic jets generated by plane-electromagnetic-wave-illuminated dielectric micro-cylinders with diameter comparable to the corresponding wavelength at microwave frequencies. Using a home-made 2D spatial field map** system, we carried out a point-by-point measurement of both phase and intensity of spatial electric field distribution inside and around scattering cylinders, providing a clear complete electromagnetic field picture for these phenomena. Correspondingly, the theoretically predicted super-enhancement of the backscattering induced by small particles of deeply-subwavelength size located within the photonic jets was also confirmed. Our measurements agreed well with the numerical simulations, indicating that the photonic jets indeed can provide a promising powerful way for deeply subwavelength detection and imaging.
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Submitted 10 March, 2009;
originally announced March 2009.
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Visual Observation and Quantitative Measurement of the Microwave Absorbing Effect at X band
Authors:
L. Zhao,
X. Chen,
C. K. Ong
Abstract:
We have setup a simple field map** measure system to describe graphically the 2D quasi-free-space electromagnetic wave in a parallel plate waveguide at the X-band frequencies. Our apparatus illustrates a potential application in characterizing the microwave absorbing materials. The visual demonstration about the physical process and quantitative measurement of reflectivity coefficients can be…
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We have setup a simple field map** measure system to describe graphically the 2D quasi-free-space electromagnetic wave in a parallel plate waveguide at the X-band frequencies. Our apparatus illustrates a potential application in characterizing the microwave absorbing materials. The visual demonstration about the physical process and quantitative measurement of reflectivity coefficients can be achieved. This simple apparatus has have an advantage over with conventional testing methods which usually involve huge, expensive anechoic chambers and demand samples of large size.
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Submitted 12 November, 2008; v1 submitted 28 August, 2008;
originally announced August 2008.
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Simulation of Current Experiments on the Tunneling Effect of Narrow $ε$-Near-Zero Channels
Authors:
L. Zhao,
Y. G. Ma,
C. K. Ong
Abstract:
In this paper, we discussed the current experiments on the tunneling effect of electromagnetic energy through narrow channels of $ε$-near-zero(ENZ) medium in the microwave range. Using the finite element method, we carried out a full wave simulation of the two kinds of experimental configurations at present. It was shown that the ability of the electromagnetic waves penetrating into the ENZ medi…
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In this paper, we discussed the current experiments on the tunneling effect of electromagnetic energy through narrow channels of $ε$-near-zero(ENZ) medium in the microwave range. Using the finite element method, we carried out a full wave simulation of the two kinds of experimental configurations at present. It was shown that the ability of the electromagnetic waves penetrating into the ENZ medium is very necessary. The present experimental setups only using metamaterial-filled narrow channel in the configuration of parallel plate waveguides are unlikely to realize effective tunneling. Contrarily, the artificial plasma medium emulated using hollow metallic waveguide can achieve nearly perfect tunneling in a narrow channel without any transition section around its cutoff frequency, which exceed the scope of original ENZ tunneling theory and can be described by a simple equivalent circuit model.
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Submitted 24 April, 2008;
originally announced April 2008.
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Nernst Effect and Superconducting Fluctuations in Zn-doped YBa$_{2}$Cu$_{3}$O$_{7-δ}$
Authors:
Z. A. Xu,
J. Q. Shen,
S. R. Zhao,
Y. J. Zhang,
C. K. Ong
Abstract:
We report the measurements of in-plane resistivity, Hall effect, and Nernst effect in Zn doped YBa$_{2}$Cu$_{3}$O$_{7-δ}$ epitaxial thin films grown by pulsed laser deposition technique. The pseudogap temperature, $T^*$, determined from the temperature dependence of resistivity, does not change significantly with Zn do**. Meanwhile the onset temperature ($T^ν$) of anomalous Nernst signal above…
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We report the measurements of in-plane resistivity, Hall effect, and Nernst effect in Zn doped YBa$_{2}$Cu$_{3}$O$_{7-δ}$ epitaxial thin films grown by pulsed laser deposition technique. The pseudogap temperature, $T^*$, determined from the temperature dependence of resistivity, does not change significantly with Zn do**. Meanwhile the onset temperature ($T^ν$) of anomalous Nernst signal above $T_{c0}$, which is interpreted as evidence for vortex-like excitations, decreases sharply as the superconducting transition temperature $T_{c0}$ does. A significant decrease in the maximum of vortex Nernst signal in mixed state is also observed, which is consistent with the scenario that Zn impurities cause a decrease in the superfluid density and therefore suppress the superconductivity. The phase diagram of $T^*$, $T^ν$, and $T_{c0}$ versus Zn content is presented and discussed.
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Submitted 21 September, 2005; v1 submitted 3 April, 2005;
originally announced April 2005.
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Theory of Upper Critical Field without Energy Quantization
Authors:
L. Wang,
H. S. Lim,
C. K. Ong
Abstract:
Conventional theories for determining upper critical fields are inevitably related to the lowest eigenvalues of appropriate equations. In this Letter, a new theory of upper critical fields is designed and justified. Using MgB$_2$ as modeling prototype, our computations are in excellent agreement with the Ginzburg-Landau theory. The long-standing issue, the upward curvature of the upper critical…
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Conventional theories for determining upper critical fields are inevitably related to the lowest eigenvalues of appropriate equations. In this Letter, a new theory of upper critical fields is designed and justified. Using MgB$_2$ as modeling prototype, our computations are in excellent agreement with the Ginzburg-Landau theory. The long-standing issue, the upward curvature of the upper critical field, is found to be a manifestation of the crossover of the order parameter. The current theory is an alternative to the traditional technique of energy quantization in determining upper critical fields.
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Submitted 2 April, 2004;
originally announced April 2004.
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In-Plane Magnetic Anisotropy In RF Sputtered Fe-N Thin Films
Authors:
H. B. Nie,
S. Y. Xu,
C. K. Ong,
Q. Zhan,
D. X. Li,
J. P. Wang
Abstract:
We have fabricated Fe(N) thin films with varied N2 partial pressure and studied the microstructure, morphology, magnetic properties and resistivity by using X-ray diffraction, atomic force microscopy, transmission electron microscopy, vibrating-sample magnetometer and angle-resolved M-H hysteresis Loop tracer and standard four-point probe method. In the presence of low N2 partial pressure, Fe(N)…
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We have fabricated Fe(N) thin films with varied N2 partial pressure and studied the microstructure, morphology, magnetic properties and resistivity by using X-ray diffraction, atomic force microscopy, transmission electron microscopy, vibrating-sample magnetometer and angle-resolved M-H hysteresis Loop tracer and standard four-point probe method. In the presence of low N2 partial pressure, Fe(N) films showed a basic bcc a-Fe structure with a preferred (110) texture. A variation of in-plane magnetic anisotropy of the Fe(N) films was observed with the changing of N component. The evolution of in-plane anisotropy in the films was attributed to the directional order mechanism. Nitrogen atoms play an important role in refining the a-Fe grains and inducing uniaxial anisotropy.
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Submitted 14 August, 2003;
originally announced August 2003.
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Temperature Dependence of Resistivity of $Sr_2CoMoO_{6-δ}$ Films
Authors:
C. L. Yuan,
Z. Y. Zeng,
Y. Zhu,
P. P. Ong,
Z. X. Shen,
C. K. Ong
Abstract:
We investigate the temperature dependence of the resistivity and magnetoresistance of a polycrystalline $Sr_2CoMoO_{6-δ}$ film deposited on (100)-$SrTiO_3$ substrate prepared by the pulsed laser deposition method. X-ray diffraction, Raman and magnetoresistance results demonstrate clearly the coexistence of a ferromagnetic metallic and an antiferromagnetic (or paramagnetic) insulating domain. Per…
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We investigate the temperature dependence of the resistivity and magnetoresistance of a polycrystalline $Sr_2CoMoO_{6-δ}$ film deposited on (100)-$SrTiO_3$ substrate prepared by the pulsed laser deposition method. X-ray diffraction, Raman and magnetoresistance results demonstrate clearly the coexistence of a ferromagnetic metallic and an antiferromagnetic (or paramagnetic) insulating domain. Percolative transition between these two phases as the temperature varies, which is believed to induce a metal-insulator transition at around $T_C$, has been directly observed in our measurements of the temperature dependence of the sample resistivity. Thus we have provided new direct evidence that a phase separation scenario also exists in the ordered double-perovskite structure materials.
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Submitted 23 July, 2003; v1 submitted 22 July, 2003;
originally announced July 2003.
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Evolution of In-Plane Magnetic Anisotropy In Sputtered FeTaN/TaN/FeTaN Sandwich Films
Authors:
H. B. Nie,
C. K. Ong,
J. P. Wang,
Z. W. Li
Abstract:
FeTaN/TaN/FeTaN sandwich films, FeTaN/TaN and TaN/FeTaN bilayers were synthesized by using RF magnetron sputtering. The magnetic properties, crystalline structures, microstructures and surface morphologies of the as-deposited samples were characterized using angle-resolved M-H loop tracer, VSM, XRD, TEM, AES and AFM. An evolution of the in-plane anisotropy was observed with the changing thicknes…
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FeTaN/TaN/FeTaN sandwich films, FeTaN/TaN and TaN/FeTaN bilayers were synthesized by using RF magnetron sputtering. The magnetic properties, crystalline structures, microstructures and surface morphologies of the as-deposited samples were characterized using angle-resolved M-H loop tracer, VSM, XRD, TEM, AES and AFM. An evolution of the in-plane anisotropy was observed with the changing thickness of the nonmagnetic TaN interlayer in the FeTaN/TaN/FeTaN sandwiches, such as the easy-hard axis switching and the appearing of biaxial anisotropy. It is ascribed to three possible mechanisms, which are interlayer magnetic coupling, stress, and interface roughness, respectively. Interlayer coupling and stress anisotropies may be the major reasons to cause the easy-hard axis switching in the sandwiches. Whereas, magnetostatic and interface anisotropies may be the major reasons to cause biaxial anisotropy in the sandwiches, in which magnetostatic anisotropy is the dominant one.
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Submitted 29 May, 2003;
originally announced May 2003.
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Magnetic anisotropy and magnetoresistance of sputtered [(FeTaN)/(TaN)](n) multilayers
Authors:
H. B. Nie,
S. Y. Xu,
J. Li,
C. K. Ong,
J. P. Wang
Abstract:
We studied the in-plane magnetic anisotropy of rf (radio frequency) sputtered [(FeTaN)/(TaN)](n) multilayers synthesized on Si substrates. In the multilayers where n=5, the FeTaN thickness is fixed at 30 nm and the thickness of TaN, t(TaN), is varied from 0 to 6.0 nm, we observed a clear trend that, with increasing t(TaN), the values of coercivity, grain size, and amplitude of maximum magnetores…
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We studied the in-plane magnetic anisotropy of rf (radio frequency) sputtered [(FeTaN)/(TaN)](n) multilayers synthesized on Si substrates. In the multilayers where n=5, the FeTaN thickness is fixed at 30 nm and the thickness of TaN, t(TaN), is varied from 0 to 6.0 nm, we observed a clear trend that, with increasing t(TaN), the values of coercivity, grain size, and amplitude of maximum magnetoresistance (MR) of the samples all decrease first and then increase after reaching a minimum when t(TaN) is around 2.0-4.0 nm. This trend is also associated with an evolution of in-plane magnetic anisotropy, where the multilayers change from uniaxial anisotropy to biaxial at t(TaN) around 4.0 nm and above. We attribute the phenomena to the interlayer coupling effect of FeTaN films as a function of the coupling layer (TaN) thickness, rather than to the thickness dependence observed in single-layered FeTaN films, where the direction of easy axis switches 90degrees when the film is thicker than 300 nm. The in-plane anisotropy of the [(FeTaN)/(TaN)](n) multilayers also shows signs of oscillation when the number of coupling layers varies. The MR effects observed are mainly due to anisotropy MR (AMR), while the grain size and exchange coupling may also contribute to the change of maximum MR ratios in the multilayers with changing t(TaN).
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Submitted 30 May, 2003; v1 submitted 29 May, 2003;
originally announced May 2003.
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Structural and electrical properties of tantalum nitride thin films fabricated by using reactive radio-frequency magnetron sputtering
Authors:
H. B. Nie,
S. Y. Xu,
S. J. Wang,
L. P. You,
Z. Yang,
C. K. Ong,
J. Li,
T. Y. F. Liew
Abstract:
TaN thin film is an attractive interlayer as well as a diffusion barrier layer in [FeN/TaN](n) multilayers for the application as potential write-head materials in high-density magnetic recording. We synthesized two series of TaN films on glass and Si substrates by using reactive radio-frequency sputtering under 5-mtorr Ar/N-2 processing pressure with varied N-2 partial pressure, and carried out…
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TaN thin film is an attractive interlayer as well as a diffusion barrier layer in [FeN/TaN](n) multilayers for the application as potential write-head materials in high-density magnetic recording. We synthesized two series of TaN films on glass and Si substrates by using reactive radio-frequency sputtering under 5-mtorr Ar/N-2 processing pressure with varied N-2 partial pressure, and carried out systematic characterization analyses of the films. We observed clear changes of phases in the films from metallic bcc Ta to a mixture of bcc Ta(N) and hexagonal Ta2N, then sequentially to fcc TaN and a mixture of TaN with N-rich phases when the N2 partial pressure increased from 0.0% to 30%. The changes were associated with changes in the grain shapes as well as in the preferred crystalline orientation of the films from bcc Ta [100] to [110], then to random and finally to fcc TaN [111], correspondingly. They were also associated with a change in film resistivity from metallic to semiconductor-like behavior in the range of 77-295 K. The films showed a typical polycrystalline textured structure with small, crystallized domains and irregular grain shapes. Clear preferred (111) stacks parallel to the substrate surface with embedded amorphous regions were observed in the film. TaN film with [ 111]-preferred orientation and a resistivity of 6.0 m Omega cm was obtained at 25% N-2 partial pressure, which may be suitable for the interlayer in [FeN/TaN](n) multilayers.
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Submitted 30 May, 2003; v1 submitted 29 May, 2003;
originally announced May 2003.
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Improvement of dielectric loss of doped Ba0.5Sr0.5TiO3 thin films for tunable microwave devices
Authors:
K. B. Chong,
L. B. Kong,
LinFeng Chen,
L. Yan,
C. Y. Tan,
T. Yang,
C. K. Ong,
T. Osipowicz
Abstract:
Al2O3-Ba0.5Sr0.5TiO3 (Al2O3-BST) thin films, with different Al2O3 contents, were deposited on (100) LaAlO3 substrate by pulsed laser deposition (PLD) technique. The Al2O3-BST films was demosnstrated to be a suitable systems to fabricate ferroelectric thin films with low dielectric loss and higher figure of merit for tunable microwave devices. Pure BST thin films were also fabricated for comparis…
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Al2O3-Ba0.5Sr0.5TiO3 (Al2O3-BST) thin films, with different Al2O3 contents, were deposited on (100) LaAlO3 substrate by pulsed laser deposition (PLD) technique. The Al2O3-BST films was demosnstrated to be a suitable systems to fabricate ferroelectric thin films with low dielectric loss and higher figure of merit for tunable microwave devices. Pure BST thin films were also fabricated for comparison purpose. The films' structure and morphology were analyzed by X-ray diffractiopn and scanning electron microscopy, respectively; nad showed that the surface roughness for the Al2O3-BST films increased with the Al2O3 content. Apart from that, the broadening in the intensity peak in XRD result indicating the grain size of the Al2O3-BST films reduced with the increasing of Al2O3 dopant. We measured the dielctric properties of Al2O3-BST films with a home-made non-destructive dual resonator method at frequency ~ 7.7 GHZ. The effect of doped Al2O3 into BST thin films significantly reduced the dielectric constant, dielectric loss and tunability compare to pure BST thin film. Our result shows the figure of merit (K), used to compare the films with varied dielectric properties, increased with the Al2O3 content. Therefore Al2O3-BST films show the potential to be exploited in tunable microwave devices.
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Submitted 23 June, 2003; v1 submitted 28 May, 2003;
originally announced May 2003.
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Pulsed Laser Deposition of LaAlO3-Ba0.5Sr0.5TiO3 Thin Films for Tunable Device Applications
Authors:
L. B. Kong,
L. Yan,
K. B. Chong,
C. Y. Tan,
L. F. Chen,
C. K. Ong
Abstract:
LaAlO3-Ba0.5Sr0.5TiO3 (LAO-BST) thin films, with different LAO contents, were deposited on Pt/Ti/SiO2/Si and (100) LaAlO3 substrate, via a pulsed laser deposition (PLD). Phase composition and microstructure of the LAO-BST thin films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The LAO-BST thin films were solid solution of LAO nd BST, with lattice constant…
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LaAlO3-Ba0.5Sr0.5TiO3 (LAO-BST) thin films, with different LAO contents, were deposited on Pt/Ti/SiO2/Si and (100) LaAlO3 substrate, via a pulsed laser deposition (PLD). Phase composition and microstructure of the LAO-BST thin films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The LAO-BST thin films were solid solution of LAO nd BST, with lattice constant decreasing with increasing LAO content. The composition of (LAO)x(BST)1-x, estimated from the lattice constant of the thin films derived from the targets of 1/6, 2/6 and 3/6 LAO, was 0.143, 0.278, 0.476, respectively. The grain size of the thin films decreased as a result of the incorporation of LAO into BST. Dielectric properties of the LAO-BST thin films on Pt/Ti/SiO2/Si were measured at low frequency (100 kHz), while those on LaAlO3 substrate were characterized at high frequency (~7.9 GHz). The dielectric constants of the film derived from pure BST target and those from the targets with 1/6, 2/6 and 3/6 area ratio of LAO, on Pt/Ti/SiO2/Si substrate, were 772, 514, 395 and 282, with a dielectric loss of 0.096, 0.023, 0.024 and 0.025, and a dielectric tunability of 65%, 53%, 43% and 14%, respectively. The dielectric constant of the LAO-BST films on LaAlO3 substrate were 2436, 2148, 2018, 1805, with a maximum dielectric tunability of 11%, 13%, 10% and 8% at a maximum applied voltage of 2.4 kV (~9.2 kV/cm).
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Submitted 8 May, 2003;
originally announced May 2003.
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Subwavelength imaging by a left-handed material superlens
Authors:
X. S. Rao,
C. K. Ong
Abstract:
In this work, finite-difference time-domain (FDTD) method is employed to justify the superlensing effect of left-handed material (LHM) slabs. Our results demonstrate that subwavelength resolution can be achieved by realistic LHM slabs with finite absorption and dimension. We present the dynamic feature of the imaging process and the dependence of physical parameters on the performance of the sup…
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In this work, finite-difference time-domain (FDTD) method is employed to justify the superlensing effect of left-handed material (LHM) slabs. Our results demonstrate that subwavelength resolution can be achieved by realistic LHM slabs with finite absorption and dimension. We present the dynamic feature of the imaging process and the dependence of physical parameters on the performance of the superlens. These results help to clarify the diversed FDTD results reported previously. We also show that the achievable resolution is limited by the absorption and thickness of the LHM slabs, which introduces difficulties in practical applications of the superlens.
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Submitted 1 July, 2003; v1 submitted 22 April, 2003;
originally announced April 2003.
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Amplification of evanescent waves in a lossy left-handed material slab
Authors:
X. S. Rao,
C. K. Ong
Abstract:
We carry out finite-difference time-domain (FDTD) simulations, with a specially-designed boundary condition, on pure evanescent waves interacting with a lossy left-handed material (LHM) slab. Our results provide the first full-wave numerical evidence for the amplification of evanescent waves inside a LHM slab of finite absorption. The amplification is due to the interactions between the evanesce…
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We carry out finite-difference time-domain (FDTD) simulations, with a specially-designed boundary condition, on pure evanescent waves interacting with a lossy left-handed material (LHM) slab. Our results provide the first full-wave numerical evidence for the amplification of evanescent waves inside a LHM slab of finite absorption. The amplification is due to the interactions between the evanescent waves and the coupled surface polaritons at the two surfaces of the LHM slab and the physical process can be described by a simple model.
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Submitted 16 June, 2003; v1 submitted 5 April, 2003;
originally announced April 2003.
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Magneto- and Electrotransport Properties of Nd0.67Sr0.33Mn1-xFexO3 (x = 0.00, 0.05)
Authors:
Chang Yoke Ling,
C. K. Ong
Abstract:
Simultaneous studies on the magnetic and electrotransport properties of Nd_{0.67} Sr_{0.33} Mn_{1-x} Fe_x O_3 polycrystalline bulk and epitaxial thin films (x = 0.00 and 0.05) have been carried out. A magnetoresistance (MR) as high as ~ 33% is observed for Nd_{0.67} Sr_{0.33} MnO_3 bulk at the metal-insulator transition (MIT) temperature (T_p) of 273 K in a magnetic field (H) of 10 kOe. Fe subst…
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Simultaneous studies on the magnetic and electrotransport properties of Nd_{0.67} Sr_{0.33} Mn_{1-x} Fe_x O_3 polycrystalline bulk and epitaxial thin films (x = 0.00 and 0.05) have been carried out. A magnetoresistance (MR) as high as ~ 33% is observed for Nd_{0.67} Sr_{0.33} MnO_3 bulk at the metal-insulator transition (MIT) temperature (T_p) of 273 K in a magnetic field (H) of 10 kOe. Fe substitution at Mn sites reduces the ferromagnetic (FM) ordering temperature (T_c) and leads to an overall increase in MR. MR as high as ~ 90% is observed for thin film (x = 0.05) at H = 10 kOe with T_p = 100 K while the corresponding bulk has a MR of only ~ 43%. Low field MR in epitaxial thin films also display a pronounced anisotropy effect compared to bulk materials.
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Submitted 20 October, 2002; v1 submitted 5 August, 2002;
originally announced August 2002.
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Properties of parallel upper critical field within Continuous Ginzburg-Landau model
Authors:
L. Wang,
H. S. Lim,
C. K. Ong
Abstract:
In this paper, we employ a continuous Ginzburg-Landau model to study the behaviors of the parallel upper critical field of an intrinsically-layered superconductor. Near $T_c$ where the order parameter is nearly homogeneous, the parallel upper critical field is found to vary as $(1-T/T_c)^{1/2}$. With a well-localized order parameter, the same field temperature dependence holds over the whole tem…
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In this paper, we employ a continuous Ginzburg-Landau model to study the behaviors of the parallel upper critical field of an intrinsically-layered superconductor. Near $T_c$ where the order parameter is nearly homogeneous, the parallel upper critical field is found to vary as $(1-T/T_c)^{1/2}$. With a well-localized order parameter, the same field temperature dependence holds over the whole temperature range. The profile of the order parameter at the parallel upper critical field may be of a Gaussian type, which is consistent with the usual linear Ginzburg-Landau theory. In addition, the influences of the unit cell dimension and the average effective masses on the parallel upper critical field and the associated order parameter are also addressed.
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Submitted 17 January, 2002;
originally announced January 2002.
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Determinations of upper critical field in the c-a plane
Authors:
L. Wang,
H. S. Lim,
C. K. Ong
Abstract:
Within a continuous Ginzburg-Landau model for layered superconductors, two procedures are proposed to determine the upper critical field parallel to the $c$-$a$ crystal plane with an angle $θ$ tilted from the c-axis. For an intrinsically layered superconductor, the upper critical fields for $θ\to 90^\circ$, as determined by the two procedures, are consistent with each other and in reasonably goo…
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Within a continuous Ginzburg-Landau model for layered superconductors, two procedures are proposed to determine the upper critical field parallel to the $c$-$a$ crystal plane with an angle $θ$ tilted from the c-axis. For an intrinsically layered superconductor, the upper critical fields for $θ\to 90^\circ$, as determined by the two procedures, are consistent with each other and in reasonably good agreement with those determined by similar procedures suited for the parallel upper critical field ($θ= 90^\circ$). The profile of the order parameter obtained at $B_{c2}$ is Gaussian-like, indicating the plausibility of the procedures proposed.
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Submitted 17 January, 2002;
originally announced January 2002.
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Determinations of upper critical field in continuous Ginzburg-Landau model
Authors:
L. Wang,
H. S. Lim,
C. K. Ong
Abstract:
Novel procedures to determine the upper critical field $B_{c2}$ have been proposed within a continuous Ginzburg-Landau model. Unlike conventional methods, where $B_{c2}$ is obtained through the determination of the smallest eigenvalue of an appropriate eigen equation, the square of the magnetic field is treated as eigenvalue problems so that the upper critical field can be directly deduced. The…
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Novel procedures to determine the upper critical field $B_{c2}$ have been proposed within a continuous Ginzburg-Landau model. Unlike conventional methods, where $B_{c2}$ is obtained through the determination of the smallest eigenvalue of an appropriate eigen equation, the square of the magnetic field is treated as eigenvalue problems so that the upper critical field can be directly deduced. The calculated $B_{c2}$ from the two procedures are consistent with each other and in reasonably good agreement with existing theories and experiments. The profile of the order parameter associated with $B_{c2}$ is found to be Gaussian-like, further validating the methodology proposed. The convergences of the two procedures are also studied.
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Submitted 8 October, 2003; v1 submitted 17 January, 2002;
originally announced January 2002.
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Reversible Structural Transition in Epitaxial Manganite Film
Authors:
Q. Zhan,
R. Yu,
L. L. He,
D. X. Li,
J. Li,
S. Y. Xu,
C. K. Ong
Abstract:
A reversible structural transition of an epitaxial La2/3Sr1/3MnO3 film deposited on the LaAlO3 substrate has been investigated by means of in situ high-resolution transmission electron microscopy (HREM) and electron diffraction, combined with image and diffraction calculations. We observe that the crystallographic symmetry of the film can be lowered via electron beam irradiation, leading to a rh…
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A reversible structural transition of an epitaxial La2/3Sr1/3MnO3 film deposited on the LaAlO3 substrate has been investigated by means of in situ high-resolution transmission electron microscopy (HREM) and electron diffraction, combined with image and diffraction calculations. We observe that the crystallographic symmetry of the film can be lowered via electron beam irradiation, leading to a rhombohedral-monoclinic transition. This transition can be attributed to the cooperating effect of the mismatch stress and the irradiation-induced thermal-stress.
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Submitted 11 December, 2001; v1 submitted 8 December, 2001;
originally announced December 2001.
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Q-Factor Measurement of Nonlinear Superconducting Resonators
Authors:
X. S. Rao,
C. K. Ong,
Y. P. Feng
Abstract:
A novel method, which combined a multi-bandwidth measurement and an extrapolation procedure, is proposed for extracting the loaded Q-factor (Q_{L}) with improved accuracy from non-Lorentzian resonances of nonlinear superconducting resonators.
A novel method, which combined a multi-bandwidth measurement and an extrapolation procedure, is proposed for extracting the loaded Q-factor (Q_{L}) with improved accuracy from non-Lorentzian resonances of nonlinear superconducting resonators.
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Submitted 21 January, 2000;
originally announced January 2000.
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Hysteresis measurement of anomalous microwave surface resistance in superconducting thin films
Authors:
X. S. Rao,
C. K. Ong,
B. B. **,
Y. P. Feng
Abstract:
The anomalous decrease in microwave surface resistance, R_{s}, of superconducting YBa_{2}Cu_{3}O_{7-d} (YBCO) thin films in the presence of a low dc magnetic field is studied using a microstrip resonator technique. We have done a dc field hysteresis measurement of R_{s} to study the effects of vortex penetration on the anomalous effect. It is shown that the anomaly happens at a field level far b…
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The anomalous decrease in microwave surface resistance, R_{s}, of superconducting YBa_{2}Cu_{3}O_{7-d} (YBCO) thin films in the presence of a low dc magnetic field is studied using a microstrip resonator technique. We have done a dc field hysteresis measurement of R_{s} to study the effects of vortex penetration on the anomalous effect. It is shown that the anomaly happens at a field level far below the low critical field, H_{c1,strip}, of the superconducting microstrip and vortex (Abrikosov) penetration would eliminate the anomalous effect observed at low field. This implies that the anomalous effect is not contributed by vortices.
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Submitted 21 January, 2000; v1 submitted 3 January, 2000;
originally announced January 2000.
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Anomalous microwave response of high-temperature superconducting thin-film microstrip resonator in weak dc magnetic fields
Authors:
X. S. Rao,
C. K. Ong,
B. B. **,
C. Y. Tan,
S. Y. Xu,
P. Chen,
J. Li,
Y. P. Feng
Abstract:
We have studied an anomalous microwave (mw) response of superconducting YBa_{2}Cu_{3}O_{7-delta} (YBCO) microstrip resonators in the presence of a weak dc magnetic field, H_{dc}. The surface resistance (R_{s}) and reactance (X_{s}) show a correlated non-monotonic behaviour as a function of H_{dc}. R_{s} and X_{s} were found to initially decrease with elevated H_{dc} and then increase after H_{dc…
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We have studied an anomalous microwave (mw) response of superconducting YBa_{2}Cu_{3}O_{7-delta} (YBCO) microstrip resonators in the presence of a weak dc magnetic field, H_{dc}. The surface resistance (R_{s}) and reactance (X_{s}) show a correlated non-monotonic behaviour as a function of H_{dc}. R_{s} and X_{s} were found to initially decrease with elevated H_{dc} and then increase after H_{dc} reaches a crossover field, H_{c}, which is independent of the amplitude and frequency of the input mw signal within the measurements. The frequency dependence of R_{s} is almost linear at fixed H_{dc} with different magnitudes (<H_{c}, =H_{c} and >H_{c}). The impedance plane analysis demonstrates that r_{H}, which is defined as the ratio of the change in R_{s}(H_{dc}) and that in X_{s}(H_{dc}), is about 0.6 at H_{dc}<H_{c} and 0.1 at H_{dc}>H_{c}. The H_{dc} dependence of the surface impedance is qualitatively independent of the orientation of H_{dc}.
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Submitted 29 August, 1999;
originally announced August 1999.
