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Architecture of nanoscale ferroelectric domains in GaMo4S8
Authors:
Erik Neuber,
Peter Milde,
Adam Butykai,
Sandor Bordacs,
Hiroyuki Nakamura,
Takeshi Waki,
Yoshikazu Tabata,
Korbinian Geirhos,
Peter Lunkenheimer,
Istvan Kézsmárki,
Petr Ondrejkovic,
Jirka Hlinka,
Lukas M. Eng
Abstract:
Local-probe imaging of the ferroelectric domain structure and auxiliary bulk pyroelectric measurements were conducted at low temperatures with the aim to clarify the essential aspects of the orbitally driven phase transition in GaMo4S8, a lacunar spinel crystal that can be viewed as a spin-hole analogue of its GaV4S8 counterpart. We employed multiple scanning probe techniques combined with symmetr…
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Local-probe imaging of the ferroelectric domain structure and auxiliary bulk pyroelectric measurements were conducted at low temperatures with the aim to clarify the essential aspects of the orbitally driven phase transition in GaMo4S8, a lacunar spinel crystal that can be viewed as a spin-hole analogue of its GaV4S8 counterpart. We employed multiple scanning probe techniques combined with symmetry and mechanical compatibility analysis to uncover the hierarchical domain structures, develo** on the 10-100 nm scale. The identified domain architecture involves a plethora of ferroelectric domain boundaries and junctions, including primary and secondary domain walls in both electrically neutral and charged configurations, and topological line defects transforming neutral secondary walls into two oppositely charged ones.
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Submitted 11 January, 2021;
originally announced January 2021.
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BaTiO3 thin films as transitional ferrroelectrics with giant dielectric response
Authors:
A. S. Everhardt,
T. Denneulin,
A. Gruenebohm,
Y-T. Shao,
P. Ondrejkovic,
S. Zhou,
N. Domingo,
G. Catalan,
J. Hlinka,
J-M. Zuo,
S. Matzen,
B. Noheda
Abstract:
Proximity to phase transitions (PTs) is frequently responsible for the largest dielectric susceptibilities in ferroelectrics. The impracticality of using temperature as a control parameter to reach those large responses has motivated the design of solid solutions with phase boundaries between different polar phases at temperatures (typically room temperature) significantly lower than the paraelect…
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Proximity to phase transitions (PTs) is frequently responsible for the largest dielectric susceptibilities in ferroelectrics. The impracticality of using temperature as a control parameter to reach those large responses has motivated the design of solid solutions with phase boundaries between different polar phases at temperatures (typically room temperature) significantly lower than the paraelectric-ferroelectric critical temperature. The flat energy landscapes close to these PTs give rise to polarization rotation under external stimuli, being responsible for the best piezoelectrics so far and a their huge market. But this approach requires complex chemistry to achieve temperature-independent PT boundaries and often involves lead-containing compounds. Here we report that such a bridging state is possible in thin films of chemically simple materials such as BaTiO3. A coexistence of tetragonal, orthorhombic and their bridging low-symmetry phases are shown to be responsible for the continuous vertical polarization rotation, recreating a smear in-transition state and leading to giant temperature-independent dielectric response. These features are distinct from those of single crystals, multi-domain crystals, ceramics or relaxor ferroelectrics, requiring a different description. We believe that other materials can be engineered in a similar way to form a class of ferroelectrics, in which MPB solid solutions are also included, that we propose to coin as transitional ferroelectrics.
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Submitted 23 July, 2019;
originally announced July 2019.
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Local structure of relaxor ferroelectric Sr$_x$Ba$_{1-x}$Nb$_2$O$_6$ from pair distribution function analysis
Authors:
M. Paściak,
P. Ondrejkovic,
P. Vanek,
J. Drahokoupil,
G. Steciuk,
L. Palatinus,
T. R. Welberry,
J. Kulda,
H. E. Fischer,
J. Hlinka,
E. Buixaderas
Abstract:
Neutron pair distribution function analysis and first principles calculations have been employed to study short-range correlations in heavily disordered dielectric material Sr$_x$Ba$_{1-x}$Nb$_2$O$_6$ ($x=0.35, 0.5$ and 0.61). The combination of methods has been fruitful in pinpointing main local-structure features, their temperature behaviour and interrelation. A rather complex system of tilts is…
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Neutron pair distribution function analysis and first principles calculations have been employed to study short-range correlations in heavily disordered dielectric material Sr$_x$Ba$_{1-x}$Nb$_2$O$_6$ ($x=0.35, 0.5$ and 0.61). The combination of methods has been fruitful in pinpointing main local-structure features, their temperature behaviour and interrelation. A rather complex system of tilts is found to be both temperature and Sr-content sensitive with the biggest tilt magnitudes reached at low temperatures and high $x$. Relative Nb-O$_6$ displacements, directly responsible for material's ferroelectric properties, are shown to be distinct in two octahedra sub-systems with different freezing temperatures and disparate levels of deviation from macroscopic polarization direction. Intrinsic disorder caused by Sr, Ba and vacancy distribution is found to introduce local strain to the structure and directly influence octahedra tilting. These findings establish a new atomistic picture of the local structure -- property relationship in Sr$_x$Ba$_{1-x}$Nb$_2$O$_6$.
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Submitted 21 November, 2018; v1 submitted 19 November, 2018;
originally announced November 2018.
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Neutron scattering study of ferroelectric Sn2P2S6 under pressure
Authors:
P. Ondrejkovic,
M. Kempa,
Y. Vysochanskii,
P. Saint-Gregoire,
P. Bourges,
K. Z. Rushchanskii,
J. Hlinka
Abstract:
Ferroelectric phase transition in the semiconductor Sn2P2S6 single crystal has been studied by means of neutron scattering in the pressure-temperature range adjacent to the anticipated tricritical Lifshitz point (p=0.18GPa, T=296K). The observations reveal a direct ferroelectric-paraelectric phase transition in the whole investigated pressure range (0.18 - 0.6GPa). These results are in a clear dis…
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Ferroelectric phase transition in the semiconductor Sn2P2S6 single crystal has been studied by means of neutron scattering in the pressure-temperature range adjacent to the anticipated tricritical Lifshitz point (p=0.18GPa, T=296K). The observations reveal a direct ferroelectric-paraelectric phase transition in the whole investigated pressure range (0.18 - 0.6GPa). These results are in a clear disagreement with phase diagrams assumed in numerous earlier works, according to which a hypothetical intermediate incommensurate phase extends over several or even tens of degrees in the 0.5GPa pressure range. Temperature dependence of the anisotropic quasielastic diffuse scattering suggests that polarization fluctuations present above TC are strongly reduced in the ordered phase. Still, the temperature dependence of the (200) Bragg reflection intensity at p=0.18GPa can be remarkably well modeled assuming the order-parameter amplitude growth according to the power law with logarithmic corrections predicted for a uniaxial ferroelectric transition at the tricritical Lifshitz point.
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Submitted 7 December, 2012;
originally announced December 2012.
