Defect-driven antiferromagnetic domain walls in CuMnAs films
Authors:
Sonka Reimers,
Dominik Kriegner,
Olena Gomonay,
Dina Carbone,
Filip Krizek,
Vit Novak,
Richard P. Campion,
Francesco Maccherozzi,
Alexander Bjorling,
Oliver J. Amin,
Luke X. Barton,
Stuart F. Poole,
Khalid A. Omari,
Jan Michalicka,
Ondrej Man,
Jairo Sinova,
Tomas Jungwirth,
Peter Wadley,
Sarnjeet S. Dhesi,
Kevin W. Edmonds
Abstract:
Efficient manipulation of antiferromagnetic (AF) domains and domain walls has opened up new avenues of research towards ultrafast, high-density spintronic devices. AF domain structures are known to be sensitive to magnetoelastic effects, but the microscopic interplay of crystalline defects, strain and magnetic ordering remains largely unknown. Here, we reveal, using photoemission electron microsco…
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Efficient manipulation of antiferromagnetic (AF) domains and domain walls has opened up new avenues of research towards ultrafast, high-density spintronic devices. AF domain structures are known to be sensitive to magnetoelastic effects, but the microscopic interplay of crystalline defects, strain and magnetic ordering remains largely unknown. Here, we reveal, using photoemission electron microscopy combined with scanning X-ray diffraction imaging and micromagnetic simulations, that the AF domain structure in CuMnAs thin films is dominated by nanoscale structural twin defects. We demonstrate that microtwin defects, which develop across the entire thickness of the film and terminate on the surface as characteristic lines, determine the location and orientation of 180 degree and 90 degree domain walls. The results emphasize the crucial role of nanoscale crystalline defects in determining the AF domains and domain walls, and provide a route to optimizing device performance.
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Submitted 7 October, 2021;
originally announced October 2021.
Low-Energy Switching of Antiferromagnetic CuMnAs/ GaP Using sub-10 Nanosecond Current Pulses
Authors:
K. A. Omari,
L. X. Barton,
O. Amin,
R. P. Campion,
A. W. Rushforth,
P. Wadley,
K. W. Edmonds
Abstract:
The recently discovered electrical-induced switching of antiferromagnetic (AF) materials that have spatial inversion asymmetry has enriched the field of spintronics immensely and opened the door for the concept of antiferromagnetic MRAM. CuMnAs is one promising AF material that exhibits such electrical switching ability, and has been studied to switch using electrical pulses of length millisecond…
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The recently discovered electrical-induced switching of antiferromagnetic (AF) materials that have spatial inversion asymmetry has enriched the field of spintronics immensely and opened the door for the concept of antiferromagnetic MRAM. CuMnAs is one promising AF material that exhibits such electrical switching ability, and has been studied to switch using electrical pulses of length millisecond down to picosecond, but with little focus on nanosecond regime. We demonstrate here switching of CuMnAs/GaP using nanosecond pulses. Our results showed that in the nanosecond regime low-energy switching, high readout signal with highly reproducible behaviour down to a single pulse can be achieved. Moreover, a comparison of the two switching methods of orthogonal switching and polarity switching was done on same device showing two different behaviours that can be exploited selectively for different future memory/processing applications.
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Submitted 9 June, 2021;
originally announced June 2021.
