-
Tunable Magnetic Properties in Sr$_2$FeReO$_6$ Double-Perovskite
Authors:
Z. T. Zhang,
H. Yan,
Z. Huang,
X. Chi,
C. J. Li,
Z. S. Lim,
S. W. Zeng,
K. Han,
G. J. Omar,
K. X. **,
A. Ariando
Abstract:
Double-perovskite oxides have attracted recent attention due to their attractive functionalities and application potential. In this paper, we demonstrate the effect of dual controls, i.e., the deposition pressure of oxygen (P$_O2$) and lattice mismatch ($ε$), on tuning magnetic properties in epitaxial double-perovskite Sr$_2$FeReO$_6$ films. In a nearly-lattice-matched Sr$_2$FeReO$_6$/SrTiO$_3$ fi…
▽ More
Double-perovskite oxides have attracted recent attention due to their attractive functionalities and application potential. In this paper, we demonstrate the effect of dual controls, i.e., the deposition pressure of oxygen (P$_O2$) and lattice mismatch ($ε$), on tuning magnetic properties in epitaxial double-perovskite Sr$_2$FeReO$_6$ films. In a nearly-lattice-matched Sr$_2$FeReO$_6$/SrTiO$_3$ film, the ferrimagnetic-to-paramagnetic phase transition occurs when P$_O2$ is reduced to 30 mTorr, probably due to the formation of Re$^{4+}$ ions that replace the stoichiometric Re$^{5+}$ to cause disorders of $B$-site ions. On the other hand, a large compressive strain or tensile strain shifts this critical P$_O2$ to below 1 mTorr or above 40 mTorr, respectively. The observations could be attributed to the modulation of $B$-site ordering by epitaxial strain through affecting elemental valence. Our results provide a feasible way to expand the functional tunability of magnetic double-perovskite oxides that hold great promise for spintronic devices.
△ Less
Submitted 26 April, 2023;
originally announced April 2023.
-
High-quality NiFe thin films on oxide/non-oxide platforms via pulsed laser deposition at room temperature
Authors:
H. Yan,
G. J. Omar,
Z. T. Zhao,
Lim Zhi Shiuh,
A. Ariando
Abstract:
Soft ferromagnetic NiFe thin films are promising for applications in spintronic devices because of their constituent electrical and magnetic properties. Electron beam evaporation and sputtering techniques have been used to deposit NiFe thin films. For in-situ stacking of NiFe with functional complex oxides, the pulsed laser deposition (PLD) method is highly desirable. However, the growth of high-q…
▽ More
Soft ferromagnetic NiFe thin films are promising for applications in spintronic devices because of their constituent electrical and magnetic properties. Electron beam evaporation and sputtering techniques have been used to deposit NiFe thin films. For in-situ stacking of NiFe with functional complex oxides, the pulsed laser deposition (PLD) method is highly desirable. However, the growth of high-quality NiFe (and non-oxide thin films in general) by PLD remains a formidable task. Here, we report high-quality NiFe thin films of various thicknesses on oxide/non-oxide substrates with desirable magnetic properties by PLD at room temperature. The magnetic properties are found to be strongly dependent on the laser fluence of the deposition process. The laser fluence of 4 Joule/cm$^2$ produces the highest magnetization of ~547 emu/cc. The small coercivity (few Oersted) and sharp ferromagnetic switching behaviour indicate uniaxial anisotropy with an easy axis along the in-plane direction. In addition, thickness-dependent magnetodynamics characterizations are studied via ferromagnetic resonance. Our findings indicate the ferromagnetic characteristics are sensitive to the quality of the oxide/non-oxide substrate surface. These results offer significant insight into the PLD-based development of thin metal magnetic films.
△ Less
Submitted 1 April, 2023;
originally announced April 2023.
-
Magnetic proximity effect at the interface of two-dimensional materials and magnetic oxide insulators
Authors:
Junxiong Hua,
Jiangbo Luo,
Yuntian Zheng,
Jiayu Chen,
Ganesh Ji Omar,
Andrew Thye Shen Wee,
A. Ariando
Abstract:
Two-dimensional (2D) materials provide a platform for develo** novel spintronic devices and circuits for low-power electronics. In particular, inducing magnetism and injecting spins in graphene have promised the emerging field of graphene spintronics. This review focuses on the magnetic proximity effect at the interface of 2D materials and magnetic oxide insulators. We highlight the unique spin-…
▽ More
Two-dimensional (2D) materials provide a platform for develo** novel spintronic devices and circuits for low-power electronics. In particular, inducing magnetism and injecting spins in graphene have promised the emerging field of graphene spintronics. This review focuses on the magnetic proximity effect at the interface of 2D materials and magnetic oxide insulators. We highlight the unique spin-related phenomena arising from magnetic exchange interaction and spin-orbital coupling in 2D materials coupled with magnetic oxides. We also describe the fabrication of multifunctional hybrid devices based on spin transport. We conclude with a perspective of the field and highlight challenges for the design and fabrication of 2D spintronic devices and their potential applications in information storage and logic devices.
△ Less
Submitted 1 April, 2023;
originally announced April 2023.
-
Spatially reconfigurable topological textures in freestanding antiferromagnetic nanomembranes
Authors:
Hariom Jani,
Jack Harrison,
Sonu Hooda,
Saurav Prakash,
Proloy Nandi,
Junxiong Hu,
Zhiyang Zeng,
Jheng-Cyuan Lin,
Ganesh ji Omar,
Jörg Raabe,
Simone Finizio,
Aaron Voon-Yew Thean,
A Ariando,
Paolo G Radaelli
Abstract:
Antiferromagnets hosting real-space topological spin textures are promising platforms to model fundamental ultrafast phenomena and explore spintronics. However, to date, they have only been fabricated epitaxially on specific symmetry-matched crystalline substrates, to preserve their intrinsic magneto-crystalline order. This curtails their integration with dissimilar supports, markedly restricting…
▽ More
Antiferromagnets hosting real-space topological spin textures are promising platforms to model fundamental ultrafast phenomena and explore spintronics. However, to date, they have only been fabricated epitaxially on specific symmetry-matched crystalline substrates, to preserve their intrinsic magneto-crystalline order. This curtails their integration with dissimilar supports, markedly restricting the scope of fundamental and applied investigations. Here, we circumvent this limitation by designing detachable crystalline antiferromagnetic nanomembranes of $α$-Fe$_{2}$O$_{3}$, that can be transferred onto other desirable supports after growth. We develop transmission-based antiferromagnetic vector-map** to show that these nanomembranes harbour rich topological phenomenology at room temperature. Moreover, we exploit their extreme flexibility to demonstrate three-dimensional reconfiguration of antiferromagnetic properties, driven locally via flexure-induced strains. This allows us to spatially design antiferromagnetic states outside their typical thermal stability window. Integration of such freestanding antiferromagnetic layers with flat or curved nanostructures could enable spin texture designs tailored by magnetoelastic-/geometric-effects in the quasi-static and dynamical regimes, opening new explorations into curvilinear antiferromagnetism and unconventional computing.
△ Less
Submitted 6 March, 2023;
originally announced March 2023.
-
Ionic modulation at the LaAlO$_3$/KTaO$_3$ interface for extreme high-mobility two-dimensional electron gas
Authors:
H. Yan,
S. W. Zeng,
K. Rubi,
G. J. Omar,
Z. T. Zhang,
M. Goiran,
W. Escoffier,
A. Ariando
Abstract:
Due to the coexistence of many emergent phenomena, including 2D superconductivity and a large Rashba spin-orbit coupling, 5d transition metal oxides based two-dimensional electron systems (2DESs) have been prospected as one of the potential intrants for modern electronics. However, despite the lighter electron mass, the mobility of carriers, a key requisite for high-performance devices, in 5d-oxid…
▽ More
Due to the coexistence of many emergent phenomena, including 2D superconductivity and a large Rashba spin-orbit coupling, 5d transition metal oxides based two-dimensional electron systems (2DESs) have been prospected as one of the potential intrants for modern electronics. However, despite the lighter electron mass, the mobility of carriers, a key requisite for high-performance devices, in 5d-oxides devices remains far behind their 3d-oxides analogs. The carriers mobility in these oxides is significantly hampered by the inevitable presence of defects generated during the growth process. Here, we report very high mobility ($\sim$ 22650 cm$^2$V$^{-1}$s$^{-1}$) of 5d-2DES confined at the LaAlO$_3$/KTaO$_3$ interface. The high mobility, which is beyond the values observed in LaAlO$_3$/SrTiO$_3$ and $γ$-Al$_2$O$_3$/SrTiO$_3$ systems in the same carrier-density range, is achieved using the ionic-liquid gating at room temperature. We postulate that the ionic-liquid gating affects the oxygen vacancies and efficiently reduces any disorder at the interface. Investigating density and mobility in a broad range of back-gate voltage, we reveal that the mobility follows the power-law $μ\propto n^{1.2}$, indicating the very high quality of ionic-liquid-gated LaAlO$_3$/KTaO$_3$ devices, consistent with our postulate. Further, the analysis of the quantum oscillations measured in high magnetic fields confirms that the high-mobility electrons occupy the electronic sub-bands emerging from the Ta:5d orbitals of KTaO$_3$.
△ Less
Submitted 25 September, 2022;
originally announced September 2022.
-
Direct Determination of Spin-Splitting Energy in Magnetic Graphene by Landau Fan Shifts
Authors:
J. X. Hu,
Y. L. Han,
X. Chi,
G. J. Omar,
M. M. Al Ezzi,
J. Y. Tan,
J. Gou,
X. J. Yu,
K. Watanabe,
T. Taniguchi,
A. T. S. Wee,
Z. H. Qiao,
A. Ariando
Abstract:
Spin-polarized two-dimensional materials with large and tunable spin-splitting energy promise the field of 2D spintronics. While graphene has been a canonical 2D material, its spin properties and tunability are limited. Here, we demonstrate the emergence of robust spin-polarization in graphene with large and tunable spin-splitting energy of up to 132 meV at zero applied magnetic fields. The spin p…
▽ More
Spin-polarized two-dimensional materials with large and tunable spin-splitting energy promise the field of 2D spintronics. While graphene has been a canonical 2D material, its spin properties and tunability are limited. Here, we demonstrate the emergence of robust spin-polarization in graphene with large and tunable spin-splitting energy of up to 132 meV at zero applied magnetic fields. The spin polarization is induced through a magnetic exchange interaction between graphene and the underlying ferrimagnetic oxide insulating layer, Tm3Fe5O12, as confirmed by its X-ray magnetic circular dichroism. The spin-splitting energies are directly measured and visualized by the shift in their landau fan diagram mapped by analyzing the measured subnikov-de-Haas oscillations as a function of applied electric fields, showing consistent fit with our first-principles and machine learning calculations. Further, the observed spin-splitting energies can be tuned over a broad range between 98 and 166 meV by cooling fields. Our methods and results are applicable to other two-dimensional (magnetic) materials and heterostructures, and offer great potential for develo** next-generation spin logic and memory devices.
△ Less
Submitted 16 June, 2023; v1 submitted 23 May, 2022;
originally announced May 2022.
-
Oxygen Octahedral Tilt Controlled Topological Hall Effect in Epitaxial and Freestanding SrRuO3/SrIrO3 Heterostructures
Authors:
Zhi Shiuh Lim,
Amy Khoong Hong Khoo,
Zhou Zhou,
Ganesh Ji Omar,
** Yang,
Robert Laskowski,
Ariando Ariando
Abstract:
The fabrication technique of freestanding oxide flakes by epitaxial lift-off has made significant contributions to the multifunctional oxide thin film research. Several highly impactful work have recently demonstrated the robustness of freestanding oxide flakes retaining their desirable properties after detachment from the substrate by dissolving away the water-soluble Sr3Al2O6 buffer layer. First…
▽ More
The fabrication technique of freestanding oxide flakes by epitaxial lift-off has made significant contributions to the multifunctional oxide thin film research. Several highly impactful work have recently demonstrated the robustness of freestanding oxide flakes retaining their desirable properties after detachment from the substrate by dissolving away the water-soluble Sr3Al2O6 buffer layer. Firstly, in epitaxial SrRuO3/SrIrO3 systems showing Hall-humps reminiescence of Topological Hall Effect, first-principle calculations revealed that octahedral tilts can modify the sign of Dzyaloshinskii-Moriya interaction and avoid cancellation in a symmetric trilayer structure. Secondly, freestanding flakes of the trilayer is also able to retain the Hall-humps across a wide temperature range. The behaviour of humps' peak field does not vary with field direction rotation away from surface normal, consistent to a micromagnetic simulation result of Néel-type magnetic Skyrmions. The layer-resolved octahedral tilts in the freestanding heterostructures also crucially controls the occurrence of Hall-humps, consistent to the insight from the epitaxial ones. This work offers a new perspective to understanding Hall-humps in perovskite oxides, as well as demonstrates the fabrication of oxide heterostructure membranes with high interfacial quality.
△ Less
Submitted 17 May, 2023; v1 submitted 13 April, 2022;
originally announced April 2022.
-
Experimental Evidence of t2g Electron-Gas Rashba Interaction Induced by Asymmetric Orbital Hybridization
Authors:
Ganesh Ji Omar,
Weilong Kong,
Hariom Jani,
Mengsha Li,
Jun Zhou,
Zhi Shiuh Lim,
Saurav Prakash,
Shengwei Zeng,
Sonu Hooda,
Thirumalai Venkatesan,
Yuan ** Feng,
Stephen J. Pennycook,
Shen Lei,
A. Ariando
Abstract:
We report the control of Rashba spin-orbit interaction by tuning asymmetric hybridization between Ti-orbitals at the LaAlO3/SrTiO3 interface. This asymmetric orbital hybridization is modulated by introducing a LaFeO3 layer between LaAlO3 and SrTiO3, which alters the Ti-O lattice polarization and traps interfacial charge carriers, resulting in a large Rashba spin-orbit effect at the interface in th…
▽ More
We report the control of Rashba spin-orbit interaction by tuning asymmetric hybridization between Ti-orbitals at the LaAlO3/SrTiO3 interface. This asymmetric orbital hybridization is modulated by introducing a LaFeO3 layer between LaAlO3 and SrTiO3, which alters the Ti-O lattice polarization and traps interfacial charge carriers, resulting in a large Rashba spin-orbit effect at the interface in the absence of an external bias. This observation is verified through high-resolution electron microscopy, magneto-transport and first-principles calculations. Our results open hitherto unexplored avenues of controlling Rashba interaction to design next-generation spin-orbitronics.
△ Less
Submitted 5 November, 2022; v1 submitted 13 October, 2021;
originally announced October 2021.
-
Angular dependence of hump-shape Hall Effects for distinguishing between Karplus-Luttinger and Geometrical Origins
Authors:
Z. S. Lim,
L. E. Chow,
K. H. Khoo,
G. J. Omar,
Z. Zhang,
Z. Luo,
H. Yan,
P. Yang,
R. Laskowski,
A. Ariando
Abstract:
Among various magnetic thin film heterostructures in solid state Physics, two contrasting mechanisms of the hump-shaped Hall Effects remain ambiguous and debated, namely the overlap of two opposite-signed Karplus-Luttinger Hall-loops associated with inhomogeneous collinear magnetic bubbles with perpendicular anisotropy, or the Geometrical/Topological Hall Effect associated with magnetic skyrmions.…
▽ More
Among various magnetic thin film heterostructures in solid state Physics, two contrasting mechanisms of the hump-shaped Hall Effects remain ambiguous and debated, namely the overlap of two opposite-signed Karplus-Luttinger Hall-loops associated with inhomogeneous collinear magnetic bubbles with perpendicular anisotropy, or the Geometrical/Topological Hall Effect associated with magnetic skyrmions. Their similarity in topology imposes difficulty in discrimination via magnetic imaging. Here, this ambiguity is overcome by the divergence exponent of angle-dependent hump peak fields via magnetic field rotation characterization on several heterostructures. Their difference in sensitivity to in-plane fields reveals that the former mechanism involves higher uniaxial anisotropy than the latter, departing from the pure skyrmion regime described by Ginzburg-Landau framework of triple-q spin-wave superposition. Various materials can be collapsed into a single curve of divergence exponent versus domain wall energy, bridging the crossover of the two aforementioned mechanisms.
△ Less
Submitted 7 February, 2024; v1 submitted 6 August, 2021;
originally announced August 2021.
-
Room-temperature colossal magnetoresistance in terraced single-layer graphene
Authors:
J. X. Hu,
J. Gou,
M. Yang,
G. J. Omar,
J. Y. Tan,
S. W. Zeng,
Y. P. Liu,
K. Han,
Z. S. Lim,
Z. Huang,
A. T. S. Wee,
A. Ariando
Abstract:
Disorder-induced magnetoresistance (MR) effect is quadratic at low perpendicular magnetic fields and linear at high fields. This effect is technologically appealing, especially in the two-dimensional (2D) materials such as graphene, since it offers potential applications in magnetic sensors with nanoscale spatial resolution. However, it is a great challenge to realize a graphene magnetic sensor ba…
▽ More
Disorder-induced magnetoresistance (MR) effect is quadratic at low perpendicular magnetic fields and linear at high fields. This effect is technologically appealing, especially in the two-dimensional (2D) materials such as graphene, since it offers potential applications in magnetic sensors with nanoscale spatial resolution. However, it is a great challenge to realize a graphene magnetic sensor based on this effect because of the difficulty in controlling the spatial distribution of disorder and enhancing the MR sensitivity in the single-layer regime. Here, we report a room-temperature colossal MR of up to 5,000% at 9 T in terraced single-layer graphene. By laminating single-layer graphene on a terraced substrate, such as TiO2 terminated SrTiO3, we demonstrate a universal one order of magnitude enhancement in the MR compared to conventional single-layer graphene devices. Strikingly, a colossal MR of >1,000% was also achieved in the terraced graphene even at a high carrier density of ~1012 cm-2. Systematic studies of the MR of single-layer graphene on various oxide- and non-oxide-based terraced surfaces demonstrate that the terraced structure is the dominant factor driving the MR enhancement. Our results open a new route for tailoring the physical property of 2D materials by engineering the strain through a terraced substrate.
△ Less
Submitted 19 January, 2021;
originally announced January 2021.
-
Topological Hall Effect and Skyrmion-like Bubbles at a Charge-transfer Interface
Authors:
Zhi Shiuh Lim,
Changjian Li,
Zhen Huang,
Xiao Chi,
Jun Zhou,
Shengwei Zeng,
Ganesh Ji Omar,
Yuan ** Feng,
Andrivo Rusydi,
Stephen John Pennycook,
Thirumalai Venkatesan,
Ariando Ariando
Abstract:
Exploring exotic interface magnetism due to charge transfer and strong spin-orbit coupling has profound application in future development of spintronic memory. Here, the emergence, tuning and interpretation of hump-shape Hall Effect from a CaMnO3/CaIrO3/CaMnO3 trilayer structure are studied in detail. The hump signal can be recognized as Topological Hall Effect suggesting the presence of Skyrmion-…
▽ More
Exploring exotic interface magnetism due to charge transfer and strong spin-orbit coupling has profound application in future development of spintronic memory. Here, the emergence, tuning and interpretation of hump-shape Hall Effect from a CaMnO3/CaIrO3/CaMnO3 trilayer structure are studied in detail. The hump signal can be recognized as Topological Hall Effect suggesting the presence of Skyrmion-like magnetic bubbles; but the debated alternative interpretation where the signal being an artefact between two cancelling Anomalous Hall Effect loops is also discussed. Firstly, by tilting the magnetic field direction, the evolution of Hall signal suggests transformation of the bubbles topology into a more trivial kind. Secondly, by varying the thickness of CaMnO3, the optimal thicknesses for the hump signal emergence are found, suggesting a tuning of charge transfer fraction. Using high-resolution transmission electron microscopy, a stacking fault is also identified, which distinguishes the top and bottom CaMnO3/CaIrO3 interfaces in terms of charge transfer fraction and possible interfacial Dzyaloshinskii-Moriya Interaction. Finally, a spin-transfer torque experiment revealed a low threshold current density of ~10^9 A/m^2 for initiating the motion of bubbles. This discovery opens a possible route for integrating Skyrmions with antiferromagnetic spintronics.
△ Less
Submitted 2 June, 2020;
originally announced June 2020.
-
Phase diagram and superconducting dome of infinite-layer $\mathrm{Nd_{1-x}Sr_{x}NiO_{2}}$ thin films
Authors:
Shengwei Zeng,
Chi Sin Tang,
Xinmao Yin,
Changjian Li,
Mengsha Li,
Zhen Huang,
Junxiong Hu,
Wei Liu,
Ganesh Ji Omar,
Hariom Jani,
Zhi Shiuh Lim,
Kun Han,
Dongyang Wan,
** Yang,
Stephen John Pennycook,
Andrew T. S. Wee,
Ariando Ariando
Abstract:
Infinite-layer Nd1-xSrxNiO2 thin films with Sr do** level x from 0.08 to 0.3 were synthesized and investigated. We found a superconducting dome to be between 0.12 and 0.235 which is accompanied by a weakly insulating behaviour in both underdoped and overdoped regimes. The dome is akin to that in the electron-doped 214-type and infinite-layer cuprate superconductors. For x higher than 0.18, the n…
▽ More
Infinite-layer Nd1-xSrxNiO2 thin films with Sr do** level x from 0.08 to 0.3 were synthesized and investigated. We found a superconducting dome to be between 0.12 and 0.235 which is accompanied by a weakly insulating behaviour in both underdoped and overdoped regimes. The dome is akin to that in the electron-doped 214-type and infinite-layer cuprate superconductors. For x higher than 0.18, the normal state Hall coefficient ($R_{H}$) changes the sign from negative to positive as the temperature decreases. The temperature of the sign changes monotonically decreases with decreasing x from the overdoped side and approaches the superconducting dome at the mid-point, suggesting a reconstruction of the Fermi surface as the dopant concentration changes across the center of the dome.
△ Less
Submitted 2 October, 2020; v1 submitted 23 April, 2020;
originally announced April 2020.
-
Tunable and Enhanced Rashba Spin-Orbit Coupling in Iridate-Manganite Heterostructures
Authors:
T. S. Suraj,
Ganesh Ji Omar,
Hariom Jani,
Muhammad Mangattuchali Juvaid,
Sonu Hooda,
Anindita Chaudhuri,
Andrivo Rusydi,
Kanikrishnan Sethupathi,
Thirumalai Venkatesan,
Ariando Ariando,
Mamidanna Sri Ramachandra Rao
Abstract:
Tailoring spin-orbit interactions and Coulomb repulsion are the key features to observe exotic physical phenomena such as magnetic anisotropy and topological spin texture at oxide interfaces. Our study proposes a novel platform for engineering the magnetism and spin-orbit coupling at LaMnO3/SrIrO3 (3d-5d oxide) interfaces by tuning the LaMnO3 growth conditions which controls the lattice displaceme…
▽ More
Tailoring spin-orbit interactions and Coulomb repulsion are the key features to observe exotic physical phenomena such as magnetic anisotropy and topological spin texture at oxide interfaces. Our study proposes a novel platform for engineering the magnetism and spin-orbit coupling at LaMnO3/SrIrO3 (3d-5d oxide) interfaces by tuning the LaMnO3 growth conditions which controls the lattice displacement and spin-correlated interfacial coupling through charge transfer. We report on a tunable and enhanced interface-induced Rashba spin-orbit coupling and Elliot-Yafet spin relaxation mechanism in LaMnO3/SrIrO3 bilayer with change in the underlying magnetic order of LaMnO3. We also observed enhanced spin-orbit coupling strength in LaMnO3/SrIrO3 compared to previously reported SrIrO3 layers. The X-Ray spectroscopy measurement reveals the quantitative valence of Mn and their impact on charge transfer. Further, we performed angle-dependent magnetoresistance measurements, which show signatures of magnetic proximity effect in SrIrO3 while reflecting the magnetic order of LaMnO3. Our work thus demonstrates a new route to engineer the interface induced Rashba spin-orbit coupling and magnetic proximity effect in 3d-5d oxide interfaces which makes SrIrO3 an ideal candidate for spintronics applications.
△ Less
Submitted 1 April, 2020;
originally announced April 2020.
-
Characteristic Lengths of Interlayer Charge-Transfer in Correlated Oxide Heterostructures
Authors:
Ganesh Ji Omar,
Mengsha Li,
Xiao Chi,
Zhen Huang,
Zhi Shiuh Lim,
Saurav Prakash,
Shengwei Zeng,
Changjian Li,
Xiaojiang Yu,
Chunhua Tang,
Dongsheng Song,
Andrivo Rusydi,
Thirumalai Venkatesan,
Stephen John Pennycook,
Ariando Ariando
Abstract:
Using interlayer interaction to control functional heterostructures with atomic-scale designs has become one of the most effective interface-engineering strategies nowadays. Here, we demonstrate the effect of a crystalline LaFeO3 buffer layer on amorphous and crystalline LaAlO3/SrTiO3 heterostructures. The LaFeO3 buffer layer acts as an energetically favored electron acceptor in both LaAlO3/SrTiO3…
▽ More
Using interlayer interaction to control functional heterostructures with atomic-scale designs has become one of the most effective interface-engineering strategies nowadays. Here, we demonstrate the effect of a crystalline LaFeO3 buffer layer on amorphous and crystalline LaAlO3/SrTiO3 heterostructures. The LaFeO3 buffer layer acts as an energetically favored electron acceptor in both LaAlO3/SrTiO3 systems, resulting in modulation of interfacial carrier density and hence metal-to-insulator transition. For amorphous and crystalline LaAlO3/SrTiO3 heterostructures, the metal-to-insulator transition is found when the LaFeO3 layer thickness crosses 3 and 6 unit cells, respectively. Such different critical LaFeO3 thicknesses are explained in terms of distinct characteristic lengths of the redox-reaction-mediated and polar-catastrophe-dominated charge transfer, controlled by the interfacial atomic contact and Thomas-Fermi screening effect, respectively. Our results not only shed light on the complex interlayer charge transfer across oxide heterostructures but also provides a new route to precisely tailor the charge-transfer process at a functional interface.
△ Less
Submitted 24 March, 2020;
originally announced March 2020.
-
Designing hybrid graphene oxide- gold nanoparticles for nonlinear optical response: Experiment and theory
Authors:
Rajesh Kumar Yadav,
J. Aneesh,
Rituraj Sharma,
P. Abhiramnath,
Tuhin Kumar Maji,
Ganesh Ji Omar,
A. K. Mishra,
Debjani Karmakar,
K. V. Adarsh
Abstract:
Nonlinear optical absorption of light by materials are weak due to its perturbative nature, although a strong nonlinear response is of crucial importance to applications in optical limiting and switching. Here we demonstrate experimentally and theoretically an extremely efficient scheme of excited state absorption by charge transfer between donor and acceptor materials as the new method to enhance…
▽ More
Nonlinear optical absorption of light by materials are weak due to its perturbative nature, although a strong nonlinear response is of crucial importance to applications in optical limiting and switching. Here we demonstrate experimentally and theoretically an extremely efficient scheme of excited state absorption by charge transfer between donor and acceptor materials as the new method to enhance the nonlinear absorption by orders of magnitude. With this idea, we have demonstrated strong excited state absorption (ESA) in reduced graphene oxide that otherwise shows increased transparency at high fluence and enhancement of ESA by one orders of magnitude in graphene oxide by attaching gold nanoparticles (AuNP) in the tandem configuration that acts as an efficient charge transfer pair when excited at the plasmonic wavelength. To explain the unprecedented enhancement, we have developed a five-level rate equation model based on the charge transfer between the two materials and numerically simulated the results. To understand the correlation of interfacial charge-transfer with the concentration and type of the functional ligands attached to the graphene oxide sheet, we have investigated the AuNP-graphene oxide interface with various possible ligand configurations from first-principles calculations. By using the strong ESA of our hybrid materials, we have fabricated liquid cell-based high-performance optical limiters with important device parameters better than that of the benchmark optical limiters.
△ Less
Submitted 29 March, 2018;
originally announced March 2018.
-
Some remarks on the symplectic group $Sp(2g, \mathbb{Z})$
Authors:
Kumar Balasubramanian,
Ganesh Ji Omar
Abstract:
Let $G=\Sp(2g,\mathbb{Z})$ be the symplectic group over the integers. Given $m\in \mathbb{N}$, it is natural to ask if there exists a non-trivial matrix $A\in G$ such that $A^{m}=I$, where $I$ is the identity matrix in $G$. In this paper, we determine the possible values of $m\in \mathbb{N}$ for which the above problem has a solution. We also show that there is an upper bound on the maximal order…
▽ More
Let $G=\Sp(2g,\mathbb{Z})$ be the symplectic group over the integers. Given $m\in \mathbb{N}$, it is natural to ask if there exists a non-trivial matrix $A\in G$ such that $A^{m}=I$, where $I$ is the identity matrix in $G$. In this paper, we determine the possible values of $m\in \mathbb{N}$ for which the above problem has a solution. We also show that there is an upper bound on the maximal order of an element in $G$. As an illustration, we apply our results to the group $\Sp(4,\mathbb{Z})$ and determine the possible orders of elements in it. Finally, we use a presentation of $\Sp(4,\mathbb{Z})$ to identify some finite order elements and do explicit computations using the presentation to verify their orders.
△ Less
Submitted 22 August, 2013;
originally announced August 2013.
