Showing 1–7 of 7 results for author: Olson, D H

Design rules for the thermal and elastic properties of rare-earth disilicates

Authors: Cormac Toher, Mackenzie J. Ridley, Kathleen Q. Tomko, David Hans Olson, Stefano Curtarolo, Patrick E. Hopkins, Elizabeth J. Opila

Abstract: Rare-earth silicates are the current standard material for use as environmental barrier coatings for SiC-based ceramic matrix composites as hot-section components in gas-turbine engines. Expanding the design space to all available rare-earth elements to facilitate optimizing functionality requires an understanding of systematic trends in $RE_2$Si$_2$O$_7$ properties. In this work, we combine first… ▽ More Rare-earth silicates are the current standard material for use as environmental barrier coatings for SiC-based ceramic matrix composites as hot-section components in gas-turbine engines. Expanding the design space to all available rare-earth elements to facilitate optimizing functionality requires an understanding of systematic trends in $RE_2$Si$_2$O$_7$ properties. In this work, we combine first-principles calculations with experimental measurements of Young's modulus, coefficient of thermal expansion, and thermal conductivity for a range of different $RE_2$Si$_2$O$_7$ compositions and phases. Clear trends are observed in these properties as a function of the radius of the rare-earth cation. In the case of Young's modulus and thermal expansion, these trends also hold for multi-component systems; while the thermal conductivity of multi-component systems is noticeably lower, indicating the potential of such materials to also act as thermal barriers. These results provide design rules for develo** new thermal and environmental barrier coatings with stiffness and thermal expansion engineered to match that of the substrate, while simultaneously having reduced thermal conductivity. △ Less

Submitted 4 March, 2023; originally announced March 2023.

Comments: 10 pages, 5 figures

Thermal conductivity measurements of sub-surface buried substrates by steady-state thermoreflectance

Authors: Md Shafkat Bin Hoque, Yee Rui Koh, Kiumars Aryana, Eric Hoglund, Jeffrey L. Braun, David H. Olson, John T. Gaskins, Habib Ahmad, Mirza Mohammad Mahbube Elahi, Jennifer K. Hite, Zayd C. Leseman, W. Alan Doolittle, Patrick E. Hopkins

Abstract: Measuring the thermal conductivity of sub-surface buried substrates are of significant practical interests. However, this remains challenging with traditional pump-probe spectroscopies due to their limited thermal penetration depths (TPD). Here, we experimentally and numerically investigate the TPD of recently developed optical pump-probe technique steady-state thermoreflectance (SSTR) and explore… ▽ More Measuring the thermal conductivity of sub-surface buried substrates are of significant practical interests. However, this remains challenging with traditional pump-probe spectroscopies due to their limited thermal penetration depths (TPD). Here, we experimentally and numerically investigate the TPD of recently developed optical pump-probe technique steady-state thermoreflectance (SSTR) and explore its capability for measuring the thermal properties of buried substrates. The conventional definition of the TPD does not truly represent the upper limit of how far beneath the surface SSTR can probe. For estimating the uncertainty of SSTR measurements of a buried substrate a priori, sensitivity calculations provide the best means. Thus, detailed sensitivity calculations are provided to guide future measurements. Due to the steady-state nature of SSTR, it can measure the thermal conductivity of buried substrates typically inaccessible by traditional pump-probe techniques, exemplified by measuring three control samples. We also discuss the required criteria for SSTR to isolate the thermal properties of a buried film. Our study establishes SSTR as a suitable technique for thermal characterizations of sub-surface buried substrates in typical device geometries. △ Less

Submitted 25 February, 2021; originally announced February 2021.

Journal ref: Review of Scientific Instruments 92, 064906 (2021)

Interface controlled thermal properties of ultra-thin chalcogenide-based phase change memory devices

Authors: Kiumars Aryana, John T. Gaskins, Joyeeta Nag, Derek A. Stewart, Zhaoqiang Bai, Saikat Mukhopadhyay, John C. Read, David H. Olson, Eric R. Hoglund, James M. Howe, Ashutosh Giri, Michael K. Grobis, Patrick E. Hopkins

Abstract: Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data storage and processing towards overcoming the von Neumann bottleneck. In PCMs, the primary mechanism for data storage is thermal excitation. However, there is a limited body of research regarding the thermal properties of PCMs at length scales close… ▽ More Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data storage and processing towards overcoming the von Neumann bottleneck. In PCMs, the primary mechanism for data storage is thermal excitation. However, there is a limited body of research regarding the thermal properties of PCMs at length scales close to the memory cell dimension and, thus, the impact of interfaces on PCM operation is unknown. Our work presents a new paradigm to manage thermal transport in memory cells by manipulating the interfacial thermal resistance between the phase change unit and the electrodes without incorporating additional insulating layers. Experimental measurements show a substantial change in thermal boundary resistance as GST transitions from one crystallographic structure (cubic) to another (hexagonal) and as the thickness of tungsten contacts is reduced from five to two nanometers. Simulations reveal that interfacial resistance between the phase change unit and its adjacent layer can reduce the reset current for 20 and 120 nm diameter devices by up to ~40% and ~50%, respectively. The resultant phase-dependent and geometric effects on thermal boundary resistance dictate that the effective thermal conductivity of the phase change unit can be reduced by a factor of four, presenting a new opportunity to reduce operating currents in PCMs. △ Less

Submitted 10 November, 2020; originally announced November 2020.

Report number: Nature Communications 12, 774 (2021)

Long-lived modulation of plasmonic absorption by ballistic thermal injection

Authors: John A. Tomko, Evan L. Runnerstrom, Yi-Siang Wang, Joshua R. Nolen, David H. Olson, Kyle P. Kelley, Angela Cleri, Josh Nordlander, Joshua D. Caldwell, Oleg V. Prezhdo, Jon-Paul Maria, Patrick E. Hopkins

Abstract: Energy and charge transfer across metal-semiconductor interfaces are the fundamental driving forces for a broad range of applications, such as computing, energy harvesting, and photodetection. However, the exact roles and physical separation of these two phenomena remains unclear, particularly in plasmonically-excited systems or cases of strong nonequilibrium. We report on a series of ultrafast pl… ▽ More Energy and charge transfer across metal-semiconductor interfaces are the fundamental driving forces for a broad range of applications, such as computing, energy harvesting, and photodetection. However, the exact roles and physical separation of these two phenomena remains unclear, particularly in plasmonically-excited systems or cases of strong nonequilibrium. We report on a series of ultrafast plasmonic measurements that provide a direct measure of electronic distributions, both spatially and temporally, following optical excitation of a metal-semiconductor heterostructure. For the first time, we explicitly show that in cases of strong non-equilibrium, a novel energy transduction mechanism arises at the metal/semiconductor interface. We find that hot electrons in the metal contact transfer their energy to pre-existing electrons in the semiconductor, without transfer of charge. These experimental results findings are well-supported by both rigorous multilayer optical modeling and first-principle, ab initio calculations. △ Less

Submitted 20 May, 2020; originally announced May 2020.

Heat Diffusion Imaging: In-Plane Thermal Conductivity Measurement of Thin Films in a Broad Temperature Range

Authors: T. Zhu, D. H. Olson, P. E. Hopkins, M. Zebarjadi

Abstract: This work combines the principles of the heat spreader method and imaging capability of the thermoreflectance measurements to measure the in-plane thermal conductivity of thin-films without the requirement of film suspension or multiple thermometer deposition. We refer to this hybrid technique as heat diffusion imaging. The thermoreflectance imaging system provides a temperature distribution map a… ▽ More This work combines the principles of the heat spreader method and imaging capability of the thermoreflectance measurements to measure the in-plane thermal conductivity of thin-films without the requirement of film suspension or multiple thermometer deposition. We refer to this hybrid technique as heat diffusion imaging. The thermoreflectance imaging system provides a temperature distribution map across the film surface. The in-plane thermal conductivity can be extracted from the temperature decay profile. By coupling the system with a cryostat, we were able to conduct measurements from 40 K to 400 K. Silicon thin film samples with and without periodic holes were measured and compared with in-plane time-domain thermoreflectance (TDTR) measurement and literature data as validation for heat diffusion imaging. △ Less

Submitted 15 April, 2020; originally announced April 2020.

Comments: 7 pages, 5 figures

Titanium Contacts to MoS2 with Interfacial Oxide: Interface Chemistry and Thermal Transport

Authors: Keren M. Freedy, David H. Olson, Patrick E. Hopkins, Stephen J. McDonnell

Abstract: The deposition of a thin oxide layer at metal/semiconductor interfaces has been previously reported as a means of reducing contact resistance in 2D electronics. Using X-ray photoelectron spectroscopy with in-situ Ti deposition, we fabricate Au/Ti/TiOx/MoS2 samples as well as Au/Ti/MoS2 and Au/TiOx/MoS2 for comparison. Elemental titanium reacts strongly with MoS2 whereas no interface reactions are… ▽ More The deposition of a thin oxide layer at metal/semiconductor interfaces has been previously reported as a means of reducing contact resistance in 2D electronics. Using X-ray photoelectron spectroscopy with in-situ Ti deposition, we fabricate Au/Ti/TiOx/MoS2 samples as well as Au/Ti/MoS2 and Au/TiOx/MoS2 for comparison. Elemental titanium reacts strongly with MoS2 whereas no interface reactions are observed in the two types of samples containing TiOx/MoS2 interfaces. Using time domain thermoreflectance for the measurement of thermal boundary conductance, we find that samples contacted with Ti and a thin TiOx layer at the interface (less than or equal to 1.5 nm) exhibit the same behavior as samples contacted solely with pure Ti. The Au/TiOx/MoS2 samples exhibit approximately 20% lower thermal boundary conductance, despite having the same MoS2 interface chemistry as the samples with thin oxide at the Ti/MoS2 interface. We identify the mechanism for this phenomenon, attributing it to the different interfaces with the top Au contact. Our work demonstrates that the use of thin interfacial oxide layers to reduce electrical contact resistance does not compromise heat flow in 2D electronic devices. We note that the thicknesses of the Ti and TiOx layers must be considered for optimal thermal transport. △ Less

Submitted 25 June, 2019; originally announced June 2019.

Comments: 24 pages, 10 figures, 2 tables. Submitted to Phys Rev Materials

Journal ref: Phys. Rev. Materials 3, 104001 (2019)

Small-mass atomic defects enhance vibrational thermal transport at disordered interfaces with ultrahigh thermal boundary conductance

Authors: Ashutosh Giri, Sean W. King, William A. Lanford, Antonio R. Mei, Devin Merril, Liza Ross, Ron Oviedo, John Richards, David H. Olson, Jeffrey L. Braun, John T. Gaskins, Freddy DeAngelis, Asegun Henry, Patrick E. Hopkins

Abstract: The role of interfacial nonidealities and disorder on thermal transport across interfaces is traditionally assumed to add resistance to heat transfer, decreasing the thermal boundary conductance (TBC).$^1$ However, recent computational works have suggested that interfacial defects can enhance this thermal boundary conductance through emergence of unique vibrations that are intrinsic to the materia… ▽ More The role of interfacial nonidealities and disorder on thermal transport across interfaces is traditionally assumed to add resistance to heat transfer, decreasing the thermal boundary conductance (TBC).$^1$ However, recent computational works have suggested that interfacial defects can enhance this thermal boundary conductance through emergence of unique vibrations that are intrinsic to the material interface and defect atoms,$^{2-6}$ a finding that contradicts traditional theory and conventional understanding. By manipulating the local heat flux of atomic vibrations that comprise these interfacial modes, in principle, the TBC can be increased. In this work, we provide evidence that interfacial defects can enhance the TBC across interfaces through the emergence of unique high frequency vibrational modes that arise from atomic mass defects at the interface with relatively small masses. We demonstrate ultrahigh TBC at amorphous SiOC:H/SiC:H interfaces, approaching 1 GW m$^{-2}$ K$^{-1}$, that is further increased through the introduction of nitrogen defects. The fact that disordered interfaces can exhibit such high conductances, which can be further increased with additional defects offers a unique direction in controlling interfacial thermal transport that becomes important in manipulating heat transfer across materials with high densities of interfaces. △ Less

Submitted 25 October, 2017; originally announced October 2017.