Showing 1–50 of 56 results for author: Olejník, K

Detecting slow magnetization relaxation via magnetotransport measurements based on the current-reversal method

Authors: Sebastian Beckert, Richard Schlitz, Gregor Skob**, Antonin Badura, Miina Leiviskä, Dominik Kriegner, Daniel Scheffler, Giacomo Sala, Kamil Olejník, Lisa Michez, Vincent Baltz, Andy Thomas, Helena Reichlová, Sebastian T. B. Goennenwein

Abstract: Slow magnetization relaxation processes are an important time-dependent property of many magnetic materials. We show that magnetotransport measurements based on a well-established current-reversal method can be utilized to implement a simple and robust screening scheme for such relaxation processes. We demonstrate our approach considering the anomalous Hall effect in a Pt/Co/AlOx trilayer model sy… ▽ More Slow magnetization relaxation processes are an important time-dependent property of many magnetic materials. We show that magnetotransport measurements based on a well-established current-reversal method can be utilized to implement a simple and robust screening scheme for such relaxation processes. We demonstrate our approach considering the anomalous Hall effect in a Pt/Co/AlOx trilayer model system, and then explore relaxation in τ -MnAl films. Compared to magnetotransport experiments based on ac lock-in techniques, we find that the dc current-reversal method is particulary sensitive to relaxation processes with relaxation time scales on the order of seconds, comparable to the current-reversal measurement time scales. △ Less

Submitted 23 May, 2024; originally announced May 2024.

Anisotropic magnetoresistance in altermagnetic MnTe

Authors: Ruben Dario Gonzalez Betancourt, Jan Zubáč, Kevin Geishendorf, Philipp Ritzinger, Barbora Růžičková, Tommy Kotte, Jakub Železný, Kamil Olejník, Gunther Springholz, Bernd Büchner, Andy Thomas, Karel Výborný, Tomas Jungwirth, Helena Reichlová, Dominik Kriegner

Abstract: Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect. In addition to these effects arising from altermagnetism, MnTe also hosts other magnetoresistance effects. Here, we study the manipulation of the magnetic order by an applied magnetic field and its impact on the electrical res… ▽ More Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect. In addition to these effects arising from altermagnetism, MnTe also hosts other magnetoresistance effects. Here, we study the manipulation of the magnetic order by an applied magnetic field and its impact on the electrical resistivity. In particular, we establish which components of anisotropic magnetoresistance are present when the magnetic order is rotated within the hexagonal basal plane. Our experimental results, which are in agreement with our symmetry analysis of the magnetotransport components, showcase the existence of an anisotropic magnetoresistance linked to both the relative orientation of current and magnetic order, as well as crystal and magnetic order. △ Less

Submitted 25 April, 2024; originally announced April 2024.

Picosecond transfer from short-term to long-term memory in analog antiferromagnetic memory device

Authors: M. Surynek, J. Zubac, K. Olejnik, A. Farkas, F. Krizek, L. Nadvornik, P. Kubascik, F. Trojanek, R. P. Campion, V. Novak, T. Jungwirth, P. Nemec

Abstract: Experiments in materials with a compensated ordering of magnetic moments have demonstrated a potential for approaching the thermodynamic limit of the fastest and least-dissipative operation of a digital memory bit. In addition, these materials are very promising for a construction of energy-efficient analog devices with neuromorphic functionalities, which are inspired by computing-in-memory capabi… ▽ More Experiments in materials with a compensated ordering of magnetic moments have demonstrated a potential for approaching the thermodynamic limit of the fastest and least-dissipative operation of a digital memory bit. In addition, these materials are very promising for a construction of energy-efficient analog devices with neuromorphic functionalities, which are inspired by computing-in-memory capabilities of the human brain. In this paper, we report on experimental separation of switching-related and heat-related resistance signal dynamics in memory devices microfabricated from CuMnAs antiferromagnetic metal. We show that the memory variable multilevel resistance can be used as a long-term memory (LTM), lasting up to minutes at room temperature. In addition, ultrafast reflectivity change and heat dissipation from nanoscale-thickness CuMnAs films, taking place on picosecond to hundreds of nanoseconds time scales, can be used as a short-term memory (STM). Information about input stimuli, represented by femtosecond laser pulses, can be transferred from STM to LTM after rehearsals at picosecond to nanosecond times in these memory devices, where information can be retrieved at times up to 10^15 longer than the input pulse duration. Our results open a route towards ultra-fast low-power implementations of spiking neuron and synapse functionalities using a resistive analog antiferromagnetic memory. △ Less

Submitted 30 January, 2024; originally announced January 2024.

Comments: 21 pages, 4 figures

Terahertz probing of anisotropic conductivity and morphology of CuMnAs epitaxial thin films

Authors: Peter Kubaščík, Andrej Farkaš, Kamil Olejník, Tinkara Troha, Matěj Hývl, Filip Krizek, Deep C. Joshi, Tomáš Ostatnický, Jiří Jechumtál, Eva Schmoranzerová, Richard P. Campion, Jakub Zázvorka, Vít Novák, Petr Kužel, Tomáš Jungwirth, Petr Němec, Lukáš Nádvorník

Abstract: Antiferromagnetic CuMnAs thin films have attracted attention since the discovery of the manipulation of their magnetic structure via electrical, optical, and terahertz pulses of electric fields, enabling convenient approaches to the switching between magnetoresistive states of the film for the information storage. However, the magnetic structure and, thus, the efficiency of the manipulation can be… ▽ More Antiferromagnetic CuMnAs thin films have attracted attention since the discovery of the manipulation of their magnetic structure via electrical, optical, and terahertz pulses of electric fields, enabling convenient approaches to the switching between magnetoresistive states of the film for the information storage. However, the magnetic structure and, thus, the efficiency of the manipulation can be affected by the film morphology and growth defects. In this study, we investigate the properties of CuMnAs thin films by probing the defect-related uniaxial anisotropy of electric conductivity by contact-free terahertz transmission spectroscopy. We show that the terahertz measurements conveniently detect the conductivity anisotropy, that are consistent with conventional DC Hall-bar measurements. Moreover, the terahertz technique allows for considerably finer determination of anisotropy axes and it is less sensitive to the local film degradation. Thanks to the averaging over a large detection area, the THz probing also allows for an analysis of strongly non-uniform thin films. Using scanning near-field terahertz and electron microscopies, we relate the observed anisotropic conductivity of CuMnAs to the elongation and orientation of growth defects, which influence the local microscopic conductivity. We also demonstrate control over the morphology of defects by using vicinal substrates. △ Less

Submitted 27 March, 2023; originally announced March 2023.

Comments: 33 pages, 16 figures

Anomalous Nernst effect in Mn$_3$NiN thin films

Authors: Sebastian Beckert, João Godinho, Freya Johnson, Jozef Kimák, Eva Schmoranzerová, Jan Zemen, Zbyněk Šobáň, Kamil Olejník, Jakub Železný, Joerg Wunderlich, Petr Němec, Dominik Kriegner, Andy Thomas, Sebastian T. B. Goennenwein, Lesley F Cohen, Helena Reichlová

Abstract: The observation of a sizable anomalous Hall effect in magnetic materials with vanishing magnetization has renewed interest in understanding and engineering this phenomenon. Antiferromagnetic antiperovskites are one of emerging material classes that exhibit a variety of interesting properties owing to a complex electronic band structure and magnetic ordering. Reports on the anomalous Nernst effect… ▽ More The observation of a sizable anomalous Hall effect in magnetic materials with vanishing magnetization has renewed interest in understanding and engineering this phenomenon. Antiferromagnetic antiperovskites are one of emerging material classes that exhibit a variety of interesting properties owing to a complex electronic band structure and magnetic ordering. Reports on the anomalous Nernst effect and its magnitude in this class of materials are, however, very limited. This scarcity may be partly due to the experimental difficulty of reliably quantifying the anomalous Nernst coefficient. Here, we report experiments on the anomalous Nernst effect in antiferromagnetic antiperovskite Mn$_3$NiN thin films. Measurement of both the anomalous Hall and Nernst effects using the same sample and measurement geometry makes it possible to directly compare these two effects and quantify the anomalous Nernst coefficient and conductivity in Mn$_3$NiN. We carefully evaluate the spatial distribution of the thermal gradient in the sample and use finite element modeling to corroborate our experimental results. △ Less

Submitted 5 December, 2022; originally announced December 2022.

Circular photogalvanic effects in topological insulator/ferromagnet hybrid structures

Authors: T. Schumann, T. Kleinke, L. Braun, N. Meyer, G. Mussler, J. Kampmeier, D. Grützmacher, E. Schmoranzerova, K. Olejník, H. Reichlová, C. Heiliger, C. Denker, J. Walowski, T. Kampfrath, M. Münzenberg

Abstract: We study laser driven spin-current effects at ferromagnet/topological-insulator interfaces by two complementary experimental approaches. The DC photocurrent is studied in ferromagnet/topological-insulator bilayers with high spatial resolution. Dynamic interface currents are explored via the emission of terahertz radiation emitted by these currents with high temporal resolution. From our experiment… ▽ More We study laser driven spin-current effects at ferromagnet/topological-insulator interfaces by two complementary experimental approaches. The DC photocurrent is studied in ferromagnet/topological-insulator bilayers with high spatial resolution. Dynamic interface currents are explored via the emission of terahertz radiation emitted by these currents with high temporal resolution. From our experiments, we reveal a lateral and dynamic interaction of the ferromagnet and the topological insulator interface. △ Less

Submitted 3 February, 2022; originally announced February 2022.

Comments: 15 pages,5 figures

Spontaneous anomalous Hall effect arising from an unconventional compensated magnetic phase in a semiconductor

Authors: R. D. Gonzalez Betancourt, J. Zubáč, R. J. Gonzalez-Hernandez, K. Geishendorf, Z. Šobáň, G. Springholz, K. Olejník, L. Šmejkal, J. Sinova, T. Jungwirth, S. T. B. Goennenwein, A. Thomas, H. Reichlová, J. Železný, D. Kriegner

Abstract: The anomalous Hall effect, commonly observed in metallic magnets, has been established to originate from the time-reversal symmetry breaking by an internal macroscopic magnetization in ferromagnets or by a non-collinear magnetic order. Here we observe a spontaneous anomalous Hall signal in the absence of an external magnetic field in an epitaxial film of MnTe, which is a semiconductor with a colli… ▽ More The anomalous Hall effect, commonly observed in metallic magnets, has been established to originate from the time-reversal symmetry breaking by an internal macroscopic magnetization in ferromagnets or by a non-collinear magnetic order. Here we observe a spontaneous anomalous Hall signal in the absence of an external magnetic field in an epitaxial film of MnTe, which is a semiconductor with a collinear antiparallel magnetic ordering of Mn moments and a vanishing net magnetization. The anomalous Hall effect arises from an unconventional phase with strong time-reversal symmetry breaking and alternating spin polarization in real-space crystal structure and momentum-space electronic structure. The anisotropic crystal environment of magnetic Mn atoms due to the non-magnetic Te atoms is essential for establishing the unconventional phase and generating the anomalous Hall effect. △ Less

Submitted 23 January, 2023; v1 submitted 13 December, 2021; originally announced December 2021.

Comments: 34 pages, 14 figures

Journal ref: Phys. Rev. Lett. 130, 036702 (2023)

Subgoal Search For Complex Reasoning Tasks

Authors: Konrad Czechowski, Tomasz Odrzygóźdź, Marek Zbysiński, Michał Zawalski, Krzysztof Olejnik, Yuhuai Wu, Łukasz Kuciński, Piotr Miłoś

Abstract: Humans excel in solving complex reasoning tasks through a mental process of moving from one idea to a related one. Inspired by this, we propose Subgoal Search (kSubS) method. Its key component is a learned subgoal generator that produces a diversity of subgoals that are both achievable and closer to the solution. Using subgoals reduces the search space and induces a high-level search graph suitabl… ▽ More Humans excel in solving complex reasoning tasks through a mental process of moving from one idea to a related one. Inspired by this, we propose Subgoal Search (kSubS) method. Its key component is a learned subgoal generator that produces a diversity of subgoals that are both achievable and closer to the solution. Using subgoals reduces the search space and induces a high-level search graph suitable for efficient planning. In this paper, we implement kSubS using a transformer-based subgoal module coupled with the classical best-first search framework. We show that a simple approach of generating $k$-th step ahead subgoals is surprisingly efficient on three challenging domains: two popular puzzle games, Sokoban and the Rubik's Cube, and an inequality proving benchmark INT. kSubS achieves strong results including state-of-the-art on INT within a modest computational budget. △ Less

Submitted 3 April, 2024; v1 submitted 25 August, 2021; originally announced August 2021.

Comments: NeurIPS 2021

Hysteretic effects and magnetotransport of electrically switched CuMnAs

Authors: Jan Zubáč, Zdeněk Kašpar, Filip Krizek, Tobias Förster, Richard P. Campion, Vít Novák, Tomáš Jungwirth, Kamil Olejník

Abstract: Antiferromagnetic spintronics allows us to explore storing and processing information in magnetic crystals with vanishing magnetization. In this manuscript, we investigate magnetoresistance effects in antiferromagnetic CuMnAs upon switching into high-resistive states using electrical pulses. By employing magnetic field sweeps up to 14 T and magnetic field pulses up to $\sim$ 60 T, we reveal hyster… ▽ More Antiferromagnetic spintronics allows us to explore storing and processing information in magnetic crystals with vanishing magnetization. In this manuscript, we investigate magnetoresistance effects in antiferromagnetic CuMnAs upon switching into high-resistive states using electrical pulses. By employing magnetic field sweeps up to 14 T and magnetic field pulses up to $\sim$ 60 T, we reveal hysteretic phenomena and changes in the magnetoresistance, as well as the resilience of the switching signal in CuMnAs to the high magnetic field. These properties of the switched state are discussed in the context of recent studies of antiferromagnetic textures in CuMnAs. △ Less

Submitted 12 July, 2021; originally announced July 2021.

Optically gated terahertz-field-driven switching of antiferromagnetic CuMnAs

Authors: J. J. F. Heitz, L. Nádvorník, V. Balos, Y. Behovits, A. L. Chekhov, T. S. Seifert, K. Olejník, Z. Kašpar, K. Geishendorf, V. Novák, R. P. Campion, M. Wolf, T. Jungwirth, T. Kampfrath

Abstract: We show scalable and complete suppression of the recently reported terahertz-pulse-induced switching between different resistance states of antiferromagnetic CuMnAs thin films by ultrafast gating. The gating functionality is achieved by an optically generated transiently conductive parallel channel in the semiconducting substrate underneath the metallic layer. The photocarrier lifetime determines… ▽ More We show scalable and complete suppression of the recently reported terahertz-pulse-induced switching between different resistance states of antiferromagnetic CuMnAs thin films by ultrafast gating. The gating functionality is achieved by an optically generated transiently conductive parallel channel in the semiconducting substrate underneath the metallic layer. The photocarrier lifetime determines the time scale of the suppression. As we do not observe a direct impact of the optical pulse on the state of CuMnAs, all observed effects are primarily mediated by the substrate. The sample region of suppressed resistance switching is given by the optical spot size, thereby making our scheme potentially applicable for transient low-power masking of structured areas with feature sizes of ~100 nm and even smaller. △ Less

Submitted 16 June, 2021; originally announced June 2021.

Unidirectional magnetoresistance and spin-orbit torque in NiMnSb

Authors: J. Železný, Z. Fang, K. Olejník, J. Patchett, F. Gerhard, C. Gould, L. W. Molenkamp, C. Gomez-Olivella, J. Zemen, T. Tichý, T. Jungwirth, C. Ciccarelli

Abstract: Spin-dependent transport phenomena due to relativistic spin-orbit coupling and broken space-inversion symmetry are often difficult to interpret microscopically, in particular when occurring at surfaces or interfaces. Here we present a theoretical and experimental study of spin-orbit torque and unidirectional magnetoresistance in a model room-temperature ferromagnet NiMnSb with inversion asymmetry… ▽ More Spin-dependent transport phenomena due to relativistic spin-orbit coupling and broken space-inversion symmetry are often difficult to interpret microscopically, in particular when occurring at surfaces or interfaces. Here we present a theoretical and experimental study of spin-orbit torque and unidirectional magnetoresistance in a model room-temperature ferromagnet NiMnSb with inversion asymmetry in the bulk of this half-heusler crystal. Besides the angular dependence on magnetization, the competition of Rashba and Dresselhaus-like spin-orbit couplings results in the dependence of these effects on the crystal direction of the applied electric field. The phenomenology that we observe highlights potential inapplicability of commonly considered approaches for interpreting experiments. We point out that, in general, there is no direct link between the current-induced non-equilibrium spin polarization inferred from the measured spin-orbit torque and the unidirectional magnetiresistance. We also emphasize that the unidirectional magnetoresistance has not only longitudinal but also transverse components in the electric field -- current indices which complicates its separation from the thermoelectric contributions to the detected signals in common experimental techniques. We use the theoretical results to analyze our measurements of the on-resonance and off-resonance mixing signals in microbar devices fabricated from an epitaxial NiMnSb film along different crystal directions. Based on the analysis we extract an experimental estimate of the unidirectional magnetoresistance in NiMnSb. △ Less

Submitted 25 February, 2021; originally announced February 2021.

Comments: 29 pages, 13 figures

Journal ref: Phys. Rev. B 104, 054429 (2021)

Atomically sharp domain walls in an antiferromagnet

Authors: Filip Krizek, Sonka Reimers, Zdeněk Kašpar, Alberto Marmodoro, Jan Michalička, Ondřej Man, Alexander Edstrom, Oliver J. Amin, Kevin W. Edmonds, Richard P. Campion, Francesco Maccherozzi, Sarnjeet S. Dnes, Jan Zubáč, Jakub Železný, Karel Výborný, Kamil Olejník, Vít Novák, Jan Rusz, Juan C. Idrobo, Peter Wadley, Tomas Jungwirth

Abstract: The interest in understanding scaling limits of magnetic textures such as domain walls spans the entire field of magnetism from its relativistic quantum fundamentals to applications in information technologies. The traditional focus of the field on ferromagnets has recently started to shift towards antiferromagnets which offer a rich materials landscape and utility in ultra-fast and neuromorphic d… ▽ More The interest in understanding scaling limits of magnetic textures such as domain walls spans the entire field of magnetism from its relativistic quantum fundamentals to applications in information technologies. The traditional focus of the field on ferromagnets has recently started to shift towards antiferromagnets which offer a rich materials landscape and utility in ultra-fast and neuromorphic devices insensitive to magnetic field perturbations. Here we report the observation that domain walls in an epitaxial crystal of antiferromagnetic CuMnAs can be atomically sharp. We reveal this ultimate domain wall scaling limit using differential phase contrast imaging within aberrationcorrected scanning transmission electron microscopy, which we complement by X-ray magnetic dichroism microscopy and ab initio calculations. We highlight that the atomically sharp domain walls are outside the remits of established spin-Hamiltonian theories and can offer device functionalities unparalleled in ferromagnets. △ Less

Submitted 1 December, 2020; originally announced December 2020.

Comments: 8 pages, 4 figures, Supplementary information

Journal ref: Science advances, 8(13), eabn3535 (2022)

Magneto-Seebeck microscopy of domain switching in collinear antiferromagnet CuMnAs

Authors: Tomas Janda, Joao Godinho, Tomas Ostatnicky, Emanuel Pfitzner, Georg Ulrich, Arne Hoehl, Sonka Reimers, Zbynek Soban, Thomas Metzger, Helena Reichlova, Vít Novák, Richard Campion, Joachim Heberle, Peter Wadley, Kevin Edmonds, Ollie Amin, Jas Chauhan, Sarnjeet Dhesi, Francesco Maccherozzi, Ruben Otxoa, Pierre Roy, Kamil Olejnik, Petr Němec, Tomas Jungwirth, Bernd Kaestner , et al. (1 additional authors not shown)

Abstract: Antiferromagnets offer spintronic device characteristics unparalleled in ferromagnets owing to their lack of stray fields, THz spin dynamics, and rich materials landscape. Microscopic imaging of aniferromagnetic domains is one of the key prerequisites for understading physical principles of the device operation. However, adapting common magnetometry techniques to the dipolar-field-free antiferroma… ▽ More Antiferromagnets offer spintronic device characteristics unparalleled in ferromagnets owing to their lack of stray fields, THz spin dynamics, and rich materials landscape. Microscopic imaging of aniferromagnetic domains is one of the key prerequisites for understading physical principles of the device operation. However, adapting common magnetometry techniques to the dipolar-field-free antiferromagnets has been a major challenge. Here we demonstrate in a collinear antiferromagnet a thermoelectric detection method by combining the magneto-Seebeck effect with local heat gradients generated by scanning far-field or near-field techniques. In a 20 nm epilayer of uniaxial CuMnAs we observe reversible 180 deg switching of the Néel vector via domain wall displacement, controlled by the polarity of the current pulses. We also image polarity-dependent 90 deg switching of the Néel vector in a thicker biaxial film, and domain shattering induced at higher pulse amplitudes. The antiferromagnetic domain maps obtained by our laboratory technique are compared to measurements by the established synchrotron microscopy using X-ray magnetic linear dichroism. △ Less

Submitted 11 April, 2020; originally announced April 2020.

Journal ref: Phys. Rev. Materials 4, 094413 (2020)

Current-induced fragmentation of antiferromagnetic domains

Authors: M. S. Wörnle, P. Welter, Z. Kašpar, K. Olejník, V. Novák, R. P. Campion, P. Wadley, T. Jungwirth, C. L. Degen, P. Gambardella

Abstract: Electrical and optical pulsing allow for manipulating the order parameter and magnetoresistance of antiferromagnets, opening novel prospects for digital and analog data storage in spintronic devices. Recent experiments in CuMnAs have demonstrated giant resistive switching signals in single-layer antiferromagnetic films together with analog switching and relaxation characteristics relevant for neur… ▽ More Electrical and optical pulsing allow for manipulating the order parameter and magnetoresistance of antiferromagnets, opening novel prospects for digital and analog data storage in spintronic devices. Recent experiments in CuMnAs have demonstrated giant resistive switching signals in single-layer antiferromagnetic films together with analog switching and relaxation characteristics relevant for neuromorphic computing. Here we report simultaneous electrical pulsing and scanning NV magnetometry of antiferromagnetic domains in CuMnAs performed using a pump-probe scheme. We observe a nano-scale fragmentation of the antiferromagnetic domains, which is controlled by the current amplitude and independent on the current direction. The fragmented antiferromagnetic state conserves a memory of the pristine domain pattern, towards which it relaxes. Domain fragmentation coexists with permanent switching due to the reorientation of the antiferromagnetic moments. Our simultaneous imaging and resistance measurements show a correlation between the antiferromagnetic domain fragmentation and the largest resistive switching signals in CuMnAs. △ Less

Submitted 11 December, 2019; originally announced December 2019.

Spin flop and crystalline anisotropic magnetoresistance in CuMnAs

Authors: M. Wang, C. Andrews, S. Reimers, O. J. Amin, P. Wadley, R. P. Campion, S. F. Poole, J. Felton, K. W. Edmonds, B. L. Gallagher, A. W. Rushforth, O. Makarovsky, K. Gas, M. Sawicki, D. Kriegner, J. Zubac, K. Olejnik, V. Novak, T. Jungwirth, M. Shahrokhvand, U. Zeitler, S. S. Dhesi, F. Maccherozzi

Abstract: Recent research works have shown that the magnetic order in some antiferromagnetic materials can be manipulated and detected electrically, due to two physical mechanisms: Neel-order spin-orbit torques and anisotropic magnetoresistance. While these observations open up opportunities to use antiferromagnets for magnetic memory devices, different physical characterization methods are required for a b… ▽ More Recent research works have shown that the magnetic order in some antiferromagnetic materials can be manipulated and detected electrically, due to two physical mechanisms: Neel-order spin-orbit torques and anisotropic magnetoresistance. While these observations open up opportunities to use antiferromagnets for magnetic memory devices, different physical characterization methods are required for a better understanding of those mechanisms. Here we report a magnetic field induced rotation of the antiferromagnetic Neel vector in epitaxial tetragonal CuMnAs thin films. Using soft x-ray magnetic linear dichroism spectroscopy, x-ray photoemission electron microscopy, integral magnetometry and magneto-transport methods, we demonstrate spin-flop switching and continuous spin reorientation in antiferromagnetic films with uniaxial and biaxial magnetic anisotropies, respectively. From field-dependent measurements of the magnetization and magnetoresistance, we obtain key material parameters including the anisotropic magnetoresistance coefficients, magnetocrystalline anisotropy, spin-flop and exchange fields. △ Less

Submitted 21 June, 2021; v1 submitted 27 November, 2019; originally announced November 2019.

Comments: 26 pages, 6 figures

Journal ref: Phys. Rev. B 101, 094429 (2020)

Molecular beam epitaxy of CuMnAs

Authors: Filip Krizek, Zdeněk Kašpar, Aliaksei Vetushka, Dominik Kriegner, Elisabetta M. Fiordaliso, Jan Michalicka, Ondřej Man, Jan Zubáč, Martin Brajer, Victoria A. Hills, Kevin W. Edmonds, Peter Wadley, Richard P. Campion, Kamil Olejník, Tomáš Jungwirth, Vít Novák

Abstract: We present a detailed study of the growth of the tetragonal polymorph of antiferromagnetic CuMnAs by the molecular beam epitaxy technique. We explore the parameter space of growth conditions and their effect on the microstructural and transport properties of the material. We identify its typical structural defects and compare the properties of epitaxial CuMnAs layers grown on GaP, GaAs and Si subs… ▽ More We present a detailed study of the growth of the tetragonal polymorph of antiferromagnetic CuMnAs by the molecular beam epitaxy technique. We explore the parameter space of growth conditions and their effect on the microstructural and transport properties of the material. We identify its typical structural defects and compare the properties of epitaxial CuMnAs layers grown on GaP, GaAs and Si substrates. Finally, we investigate the correlation between the crystalline quality of CuMnAs and its performance in terms of electrically induced resistance switching. △ Less

Submitted 5 November, 2019; originally announced November 2019.

Comments: 10 pages, 8 figures and supplementary material

Journal ref: Phys. Rev. Materials 4, 014409 (2020)

Quenching of an antiferromagnet into high resistivity states using electrical or ultrashort optical pulses

Authors: Zdeněk Kašpar, Miloslav Surýnek, Jan Zubáč, Filip Krizek, Vít Novák, Richard P. Campion, Martin S. Wörnle, Pietro Gambardella, Xavier Marti, Petr Němec, K. W. Edmonds, S. Reimers, O. J. Amin, F. Maccherozzi, S. S. Dhesi, Peter Wadley, Jörg Wunderlich, Kamil Olejník, Tomáš Jungwirth

Abstract: Ultra-fast dynamics, insensitivity to external magnetic fields, or absence of magnetic stray fields are examples of properties that make antiferromagnets of potential use in the development of spintronic devices. Similar to their ferromagnetic counterparts, antiferromagnets can store information in the orientations of the collective magnetic order vector. However, also in analogy to ferromagnets,… ▽ More Ultra-fast dynamics, insensitivity to external magnetic fields, or absence of magnetic stray fields are examples of properties that make antiferromagnets of potential use in the development of spintronic devices. Similar to their ferromagnetic counterparts, antiferromagnets can store information in the orientations of the collective magnetic order vector. However, also in analogy to ferromagnets, the readout magnetoresistivity signals in simple antiferromagnetic films have been weak and the extension of the electrical reorientation mechanism to optics has not been achieved. Here we report reversible and reproducible quenching of an antiferromagnetic CuMnAs film by either electrical or ultrashort optical pulses into nano-fragmented domain states. The resulting resistivity changes approach 20\% at room temperature, which is comparable to the giant magnetoresistance ratios in ferromagnetic multilayers. We also obtain a signal readout by optical reflectivity. The analog time-dependent switching and relaxation characteristics of our devices can mimic functionality of spiking neural network components. △ Less

Submitted 24 June, 2021; v1 submitted 19 September, 2019; originally announced September 2019.

Journal ref: Nat. Electron 4 (2021) 30-37

Electrically induced and detected Néel vector reversal in a collinear antiferromagnet

Authors: J. Godinho, H. Reichlova, D. Kriegner, V. Novak, K. Olejnik, Z. Kaspar, Z. Soban, P Wadley, R. P. Campion, R. M. Otxoa, P. E. Roy, J. Zelezny, T. Jungwirth, J. Wunderlich

Abstract: Electrical detection of the 180 deg spin reversal, which is the basis of the operation of ferromagnetic memories, is among the outstanding challenges in the research of antiferromagnetic spintronics. Analogous effects to the ferromagnetic giant or tunneling magnetoresistance have not yet been realized in antiferromagnetic multilayers. Anomalous Hall effect (AHE), which has been recently employed f… ▽ More Electrical detection of the 180 deg spin reversal, which is the basis of the operation of ferromagnetic memories, is among the outstanding challenges in the research of antiferromagnetic spintronics. Analogous effects to the ferromagnetic giant or tunneling magnetoresistance have not yet been realized in antiferromagnetic multilayers. Anomalous Hall effect (AHE), which has been recently employed for spin reversal detection in non-collinear antiferromagnets, is limited to materials that crystalize in ferromagnetic symmetry groups. Here we demonstrate electrical detection of the 180 deg Néel vector reversal in CuMnAs which comprises two collinear spin sublattices and belongs to an antiferromagnetic symmetry group with no net magnetic moment. We detect the spin reversal by measuring a second-order magnetotransport coefficient whose presence is allowed in systems with broken space inversion symmetry. The phenomenology of the non-linear transport effect we observe in CuMnAs is consistent with a microscopic scenario combining anisotropic magneto-resistance (AMR) with a transient tilt of the Néel vector due to a current-induced, staggered spin-orbit field. We use the same staggered spin-orbit field, but of a higher amplitude, for the electrical switching between reversed antiferromagnetic states which are stable and show no sign of decay over 25 hour probing times. △ Less

Submitted 7 June, 2018; originally announced June 2018.

Comments: 15 pages, 5 pictures, supplementary informations

THz electrical writing speed in an antiferromagnetic memory

Authors: K. Olejnik, T. Seifert, Z. Kaspar, V. Novak, P. Wadley, R. P. Campion, M. Baumgartner, P. Gambardella, P. Nemec, J. Wunderlich, J. Sinova, M. Muller, T. Kampfrath, T. Jungwirth

Abstract: The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic GHz threshold. Recently, an alternative research direction has been initiated by realizing memory devices based on antiferromagnets in which spin directions periodically alternate from one atomic lattice site to the next. In our work we experimentally demonstrate at room temperature that the speed… ▽ More The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic GHz threshold. Recently, an alternative research direction has been initiated by realizing memory devices based on antiferromagnets in which spin directions periodically alternate from one atomic lattice site to the next. In our work we experimentally demonstrate at room temperature that the speed of reversible electrical writing in a memory device can be scaled up to THz using an antiferromagnet. Efficient current-induced spin-torque mechanism is responsible for the switching in our memory devices throughout the twelve orders of magnitude range of writing speeds from Hz to THz. Our work opens the path towards the development of memory-logic technology reaching the elusive THz band. △ Less

Submitted 24 October, 2017; originally announced November 2017.

Fast optical control of spin in semiconductor interfacial structures

Authors: L. Nádvorník, M. Surýnek, K. Olejník, V. Novák, J. Wunderlich, F. Trojánek, T. Jungwirth, P. Němec

Abstract: We report on a picosecond-fast optical removal of spin polarization from a self-confined photo-carrier system at an undoped GaAs/AlGaAs interface possessing superior long-range and high-speed spin transport properties. We employed a modified resonant spin amplification technique with unequal intensities of subsequent pump pulses to experimentally distinguish the evolution of spin populations origi… ▽ More We report on a picosecond-fast optical removal of spin polarization from a self-confined photo-carrier system at an undoped GaAs/AlGaAs interface possessing superior long-range and high-speed spin transport properties. We employed a modified resonant spin amplification technique with unequal intensities of subsequent pump pulses to experimentally distinguish the evolution of spin populations originating from different excitation laser pulses. We demonstrate that the density of spins, which is injected into the system by means of the optical orientation, can be controlled by reducing the electrostatic confinement of the system using an additional generation of photocarriers. It is also shown that the disturbed confinement recovers within hundreds of picoseconds after which spins can be again photo-injected into the system. △ Less

Submitted 30 May, 2017; originally announced May 2017.

Journal ref: Phys. Rev. Applied 8, 034022 (2017)

Antiferromagnetic multi-level memory cell

Authors: V. Schuler, K. Olejnik, X. Marti, V. Novak, P. Wadley, R. P. Campion, K. W. Edmonds, B. L. Gallagher, J. Garces, M. Baumgartner, P. Gambardella, T. Jungwirth

Abstract: Antiferromagnets (AFs) are remarkable magnetically ordered materials that due to the absence of a net magnetic moment do not generate dipolar fields and are insensitive to external magnetic field perturbations. However, it has been notoriously difficult to control antiferromagnetic moments by any practical means suitable for device applications. This has left AFs over their hundred years history v… ▽ More Antiferromagnets (AFs) are remarkable magnetically ordered materials that due to the absence of a net magnetic moment do not generate dipolar fields and are insensitive to external magnetic field perturbations. However, it has been notoriously difficult to control antiferromagnetic moments by any practical means suitable for device applications. This has left AFs over their hundred years history virtually unexploited and only poorly explored, in striking contrast to the thousands of years of fascination and utility of ferromagnetism. Very recently it has been predicted and experimentally confirmed that relativistic spin-orbit torques can provide the means for efficient electrical control of an AF. Here we place the emerging field of antiferromagnetic spintronics on the map of non-volatile solid state memory technologies. We demonstrate the complete write/store/read functionality in an antiferromagnetic CuMnAs bit cell embedded in a standard printed circuit board communicating with a computer via a USB interface. We show that the elementary-shape bit cells fabricated from a single-layer AF are electrically written on timescales ranging from milliseconds to nanoseconds and we demonstrate their deterministic multi-level switching. The multi-level cell characteristics, reflecting series of reproducible, electrically controlled domain reconfigurations, allow us to integrate memory and signal counter functionalities within the bit cell. △ Less

Submitted 10 August, 2016; originally announced August 2016.

Comments: 13 pages, 3 figures

Efficient conversion of light to charge and spin in Hall-bar microdevice

Authors: L. Nádvorník, J. A. Haigh, K. Olejník, A. C. Irvine, V. Novák, T. Jungwirth, J. Wunderlich

Abstract: We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a pn-junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10~$μ$m at low temperature. In the depleted regime, the spin Hall signals reached more than one order of magnitude… ▽ More We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a pn-junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10~$μ$m at low temperature. In the depleted regime, the spin Hall signals reached more than one order of magnitude higher values than in the normal regime at the same electrical current flowing through the micro-device. It is shown that the pn-bias has two distinct effects on the detected spin Hall signal. It controls the local drift field at the Hall cross which is highly non-linear in the pn-bias due to the shift of the depletion front. Simultaneously, it produces a change in the spin-transport parameters due to the non-linear change in the carrier density at the Hall cross with the pn-bias. △ Less

Submitted 13 May, 2016; originally announced May 2016.

Journal ref: Phys. Rev. B 91, 125205 (2015)

Enhancement of the spin Hall voltage in a reverse-biased planar pn-junction

Authors: L. Nádvorník, K. Olejník, P. Němec, V. Novák, T. Janda, J. Wunderlich, F. Trojánek, T. Jungwirth

Abstract: We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a pn-junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10~$μ$m at low temperature. In the depleted regime, the spin Hall signals reached more than one order of magnitude… ▽ More We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a pn-junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10~$μ$m at low temperature. In the depleted regime, the spin Hall signals reached more than one order of magnitude higher values than in the normal regime at the same electrical current flowing through the micro-device. It is shown that the pn-bias has two distinct effects on the detected spin Hall signal. It controls the local drift field at the Hall cross which is highly non-linear in the pn-bias due to the shift of the depletion front. Simultaneously, it produces a change in the spin-transport parameters due to the non-linear change in the carrier density at the Hall cross with the pn-bias. △ Less

Submitted 13 May, 2016; originally announced May 2016.

Journal ref: Phys. Rev. B 94, 075306 (2016)

Nanosecond spin-transfer over tens of microns in a bare GaAs/AlGaAs layer

Authors: L. Nádvorník, P. Němec, T. Janda, K. Olejník, V. Novák, V. Skoromets, H. Němec, P. Kužel, F. Trojánek, T. Jungwirth, J. Wunderlich

Abstract: The spin-conserving length-scale is a key parameter determining functionalities of a broad range of spintronic devices including magnetic multilayer spin-valves in the commercialized magnetic memories or lateral spin transistors in experimental spin-logic elements. Spatially resolved optical pump-and-probe experiments in the lateral devices allow for the direct measurement of the lengthscale and t… ▽ More The spin-conserving length-scale is a key parameter determining functionalities of a broad range of spintronic devices including magnetic multilayer spin-valves in the commercialized magnetic memories or lateral spin transistors in experimental spin-logic elements. Spatially resolved optical pump-and-probe experiments in the lateral devices allow for the direct measurement of the lengthscale and the time-scale at which spin-information is transferred from the injector to the detector. Using this technique, we demonstrate that in an undoped GaAs/AlGaAs layer spins are detected at distances reaching more than ten microns from the injection point at times as short as nanoseconds after the pump-pulse. The observed unique combination of the long-range and highrate electronic spin-transport requires simultaneous suppression of mechanisms limiting the spin life-time and mobility of carriers. Unlike earlier attempts focusing on elaborate do**, gating, or heterostructures we demonstrate that the bare GaAs/AlGaAs layer intrinsically provides superior spin-transport characteristics whether deposited directly on the substrate or embedded in complex heterostructures. △ Less

Submitted 7 October, 2015; originally announced October 2015.

Journal ref: Sci. Rep. 6, 22901 (2016)

Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe

Authors: D. Kriegner, K. Vyborny, K. Olejnik, H. Reichlova, V. Novak, X. Marti, J. Gazquez, V. Saidl, P. Nemec, V. V. Volobuev, G. Springholz, V. Holy, T. Jungwirth

Abstract: A common perception assumes that magnetic memories require ferromagnetic materials with a non-zero net magnetic moment. However, it has been recently proposed that compensated antiferromagnets with a zero net moment may represent a viable alternative to ferromagnets. So far, experimental research has focused on bistable memories in antiferromagnetic metals. In the present work we demonstrate a mul… ▽ More A common perception assumes that magnetic memories require ferromagnetic materials with a non-zero net magnetic moment. However, it has been recently proposed that compensated antiferromagnets with a zero net moment may represent a viable alternative to ferromagnets. So far, experimental research has focused on bistable memories in antiferromagnetic metals. In the present work we demonstrate a multiple-stable memory device in epitaxial manganese telluride (MnTe) which is an antiferromagnetic counterpart of common II-VI semiconductors. Favorable micromagnetic characteristics of MnTe allow us to demonstrate a smoothly varying antiferromagnetic anisotropic magnetoresistance (AMR) with a harmonic angular dependence on the applied magnetic field, analogous to ferromagnets. The continuously varying AMR provides means for the electrical read-out of multiple-stable antiferromagnetic memory states which we set by heat-assisted magneto-recording and by changing the angle of the writing field. We explore the dependence of the magnitude of the zero-field read-out signal on the strength of the writing field and demonstrate the robustness of the antiferromagnetic memory states against strong magnetic field perturbations. We ascribe the multiple-stability in our antiferromagnetic memory to different distributions of domains with the Néel vector aligned along one of the three $c$-plane magnetic easy axes in the hexagonal MnTe film. The domain redistribution is controlled during the heat-assisted recording by the strength and angle of the writing field and freezes when sufficiently below the Néel temperature. △ Less

Submitted 20 August, 2015; originally announced August 2015.

Journal ref: Nature Communications 7,11623 (2016)

Electrical detection of magnetization reversal without auxiliary magnets

Authors: K. Olejník, V. Novák, J. Wunderlich, T. Jungwirth

Abstract: First-generation magnetic random access memories based on anisotropic magnetoresistance required magnetic fields for both writing and reading. Modern all-electrical read/write memories use instead non-relativistic spin-transport connecting the storing magnetic layer with a reference ferromagnet. Recent studies have focused on electrical manipulation of magnetic moments by relativistic spin-torques… ▽ More First-generation magnetic random access memories based on anisotropic magnetoresistance required magnetic fields for both writing and reading. Modern all-electrical read/write memories use instead non-relativistic spin-transport connecting the storing magnetic layer with a reference ferromagnet. Recent studies have focused on electrical manipulation of magnetic moments by relativistic spin-torques requiring no reference ferromagnet. Here we report the observation of a counterpart magnetoresistance effect in such a relativistic system which allows us to electrically detect the sign of the magnetization without an auxiliary magnetic field or ferromagnet. We observe the effect in a geometry in which the magnetization of a uniaxial (Ga,Mn)As epilayer is set either parallel or antiparallel to a current-induced non-equilibrium spin polarization of carriers. In our structure, this linear-in-current magnetoresistance reaches 0.2\% at current density of $10^6$ A cm$^{-2}$. △ Less

Submitted 1 June, 2015; originally announced June 2015.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 91, 180402(R) (2015)

Current induced torques in structures with ultra-thin IrMn antiferromagnet

Authors: H. Reichlová, D. Kriegner, V. Holý, K. Olejník, V. Novák, M. Yamada, K. Miura, S. Ogawa, H. Takahashi, T. Jungwirth, J. Wunderlich

Abstract: Relativistic current induced torques and devices utilizing antiferromagnets have been independently considered as two promising new directions in spintronics research. Here we report electrical measurements of the torques in structures comprising a $\sim1$~nm thick layer of an antiferromagnet IrMn. The reduced Néel temperature and the thickness comparable to the spin-diffusion length allow us to i… ▽ More Relativistic current induced torques and devices utilizing antiferromagnets have been independently considered as two promising new directions in spintronics research. Here we report electrical measurements of the torques in structures comprising a $\sim1$~nm thick layer of an antiferromagnet IrMn. The reduced Néel temperature and the thickness comparable to the spin-diffusion length allow us to investigate the role of the antiferromagnetic order in the ultra-thin IrMn films in the observed torques. In a Ta/IrMn/CoFeB structure, IrMn in the high-temperature phase diminishes the torque in the CoFeB ferromagnet. At low temperatures, the antidam** torque in CoFeB flips sign as compared to the reference Ta/CoFeB structure, suggesting that IrMn in the antiferromagnetic phase governs the net torque acting on the ferromagnet. At low temperatures, current induced torque signatures are observed also in a Ta/IrMn structure comprising no ferromagnetic layer. △ Less

Submitted 20 July, 2015; v1 submitted 12 March, 2015; originally announced March 2015.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 92, 165424 (2015)

Disentangling relativistic spin torques in a ferromagnet/semiconductor bilayer

Authors: T. D. Skinner, K. Olejník, L. K. Cunningham, H. Kurebayashi, R. P. Campion, B. L. Gallagher, T. Jungwirth, A. J. Ferguson

Abstract: Recently discovered relativistic spin torques induced by a lateral current at a ferromagnet/paramagnet interface are a candidate spintronic technology for a new generation of electrically-controlled magnetic memory devices. Phenomenologically, the torques have field-like and antidam**-like components with distinct symmetries. Microscopically, they are considered to have two possible origins. In… ▽ More Recently discovered relativistic spin torques induced by a lateral current at a ferromagnet/paramagnet interface are a candidate spintronic technology for a new generation of electrically-controlled magnetic memory devices. Phenomenologically, the torques have field-like and antidam**-like components with distinct symmetries. Microscopically, they are considered to have two possible origins. In one picture, a spin-current generated in the paramagnet via the relativistic spin Hall effect (SHE) is absorbed in the ferromagnet and induces the spin transfer torque (STT). In the other picture, a non-equilibrium spin-density is generated via the relativistic inverse spin galvanic effect (ISGE) and induces the spin-orbit torque (SOT) in the ferromagnet. From the early observations in paramagnetic semiconductors, SHE and ISGE are known as companion phenomena that can both allow for electrically aligning spins in the same structure. It is essential for our basic physical understanding of the spin torques at the ferromagnet/paramagnet interface to experimentally disentangle the SHE and ISGE contributions. To achieve this we prepared an epitaxial transition-metal-ferromagnet/semiconductor-paramagnet single-crystal structure and performed a room-temperature vector analysis of the relativistic spin torques by means of the all-electrical ferromagnetic resonance (FMR) technique. By design, the field-like torque is governed by the ISGE-based mechanism in our structure while the antidam**-like torque is due to the SHE-based mechanism △ Less

Submitted 10 February, 2015; originally announced February 2015.

Spin-dependent phenomena and device concepts explored in (Ga,Mn)As

Authors: T. Jungwirth, J. Wunderlich, V. Novak, K. Olejnik, B. L. Gallagher, R. P. Campion, K. W. Edmonds, A. W. Rushforth, A. J. Ferguson, P. Nemec

Abstract: Over the past two decades, the research of (Ga,Mn)As has led to a deeper understanding of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries of new effects and demonstrations of unprecedented functionalities of experimental spintronic devices with general applicability to a wide range of materials. In this article we review the basic material properties that… ▽ More Over the past two decades, the research of (Ga,Mn)As has led to a deeper understanding of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries of new effects and demonstrations of unprecedented functionalities of experimental spintronic devices with general applicability to a wide range of materials. In this article we review the basic material properties that make (Ga,Mn)As a favorable test-bed system for spintronics research and discuss contributions of (Ga,Mn)As studies in the general context of the spin-dependent phenomena and device concepts. Special focus is on the spin-orbit coupling induced effects and the reviewed topics include the interaction of spin with electrical current, light, and heat. △ Less

Submitted 14 July, 2014; v1 submitted 7 October, 2013; originally announced October 2013.

Comments: 47 pages, 41 figures

Journal ref: Rev. Mod. Phys. 86, 855 (2014)

Systematic study of magnetic linear dichroism and birefringence in (Ga,Mn)As

Authors: N. Tesarova, T. Ostatnicky, V. Novak, K. Olejnik, J. Subrt, C. T. Ellis, A. Mukherjee, J. Lee, G. M. Sipahi, J. Sinova, J. Hamrle, T. Jungwirth, P. Nemec, J. Cerne, K. Vyborny

Abstract: Magnetic linear dichroism and birefringence in (Ga,Mn)As epitaxial layers is investigated by measuring the polarization plane rotation of reflected linearly polarized light when magnetization lies in the plane of the sample. We report on the spectral dependence of the rotation and ellipticity angles in a broad energy range of 0.12-2.7 eV for a series of optimized samples covering a wide range on M… ▽ More Magnetic linear dichroism and birefringence in (Ga,Mn)As epitaxial layers is investigated by measuring the polarization plane rotation of reflected linearly polarized light when magnetization lies in the plane of the sample. We report on the spectral dependence of the rotation and ellipticity angles in a broad energy range of 0.12-2.7 eV for a series of optimized samples covering a wide range on Mn-do**s and Curie temperatures and find a clear blue shift of the dominant peak at energy exceeding the host material band gap. These results are discussed in the general context of the GaAs host band structure and also within the framework of the k.p and mean-field kinetic-exchange model of the (Ga,Mn)As band structure. We find a semi-quantitative agreement between experiment and theory and discuss the role of disorder-induced non-direct transitions on magneto-optical properties of (Ga,Mn)As. △ Less

Submitted 27 August, 2013; originally announced August 2013.

Comments: 18 pages

Storing magnetic information in IrMn/MgO/Ta tunnel junctions via field-cooling

Authors: D. Petti, E. Albisetti, H. Reichlová, J. Gazquez, M. Varela, M. Molina-Ruiz, A. F. Lopeandía, K. Olejník, V. Novák, I. Fina, B. Dkhil, J. Hayakawa, X. Marti, J. Wunderlich, T. Jungwirth, R. Bertacco

Abstract: Tunneling junctions containing no ferromagnetic elements have been fabricated and we show that distinct resistance states can be set by field cooling the devices from above the Néel along different orientations. Variations of the resistance up to 10% are found upon field cooling in applied fields of 2T, in-plane or out of plane. Below TN, we found that the metastable states are insensitive to magn… ▽ More Tunneling junctions containing no ferromagnetic elements have been fabricated and we show that distinct resistance states can be set by field cooling the devices from above the Néel along different orientations. Variations of the resistance up to 10% are found upon field cooling in applied fields of 2T, in-plane or out of plane. Below TN, we found that the metastable states are insensitive to magnetic fields thus constituting a memory element robust against external magnetic fields. Our work provides the demonstration of an electrically readable magnetic memory device, which contains no ferromagnetic elements and stores the information in an antiferromagnetic active layer. △ Less

Submitted 15 February, 2013; originally announced February 2013.

Establishing micromagnetic parameters of ferromagnetic semiconductor (Ga,Mn)As

Authors: P. Nemec, V. Novak, N. Tesarova, E. Rozkotova, H. Reichlova, D. Butkovicova, F. Trojanek, K. Olejnik, P. Maly, R. P. Campion, B. L. Gallagher, Jairo Sinova, T. Jungwirth

Abstract: (Ga,Mn)As is at the forefront of research exploring the synergy of magnetism with the physics and technology of semiconductors, and has led to discoveries of new spin-dependent phenomena and functionalities applicable to a wide range of material systems. Its recognition and utility as an ideal model material for spintronics research has been undermined by the large scatter in reported semiconducti… ▽ More (Ga,Mn)As is at the forefront of research exploring the synergy of magnetism with the physics and technology of semiconductors, and has led to discoveries of new spin-dependent phenomena and functionalities applicable to a wide range of material systems. Its recognition and utility as an ideal model material for spintronics research has been undermined by the large scatter in reported semiconducting do** trends and micromagnetic parameters. In this paper we establish these basic material characteristics by individually optimizing the highly non-equilibrium synthesis for each Mn-do** level and by simultaneously determining all micromagnetic parameters from one set of magneto-optical pump-and-probe measurements. Our (Ga,Mn)As thin-film epilayers, spannig the wide range of accessible do**s, have sharp thermodynamic Curie point singularities typical of uniform magnetic systems. The materials show systematic trends of increasing magnetization, carrier density, and Curie temperature (reaching 188 K) with increasing do**, and monotonous do** dependence of the Gilbert dam** constant of ~0.1-0.01 and the spin stiffness of ~2-3 meVnm^2. These results render (Ga,Mn)As well controlled degenerate semiconductor with basic magnetic characteristics comparable to common band ferromagnets. △ Less

Submitted 2 July, 2012; originally announced July 2012.

Comments: 5 figures, supplementary information

Experimental observation of the optical spin-orbit torque

Authors: N. Tesarova, P. Nemec, E. Rozkotova, J. Zemen, F. Trojanek, K. Olejnik, V. Novak, P. Maly, T. Jungwirth

Abstract: Spin polarized carriers electrically injected into a magnet from an external polarizer can exert a spin transfer torque (STT) on the magnetization. The phe- nomenon belongs to the area of spintronics research focusing on manipulating magnetic moments by electric fields and is the basis of the emerging technologies for scalable magnetoresistive random access memories. In our previous work we have r… ▽ More Spin polarized carriers electrically injected into a magnet from an external polarizer can exert a spin transfer torque (STT) on the magnetization. The phe- nomenon belongs to the area of spintronics research focusing on manipulating magnetic moments by electric fields and is the basis of the emerging technologies for scalable magnetoresistive random access memories. In our previous work we have reported experimental observation of the optical counterpart of STT in which a circularly polarized pump laser pulse acts as the external polarizer, allowing to study and utilize the phenomenon on several orders of magnitude shorter timescales than in the electric current induced STT. Recently it has been theoretically proposed and experimentally demonstrated that in the absence of an external polarizer, carriers in a magnet under applied electric field can develop a non-equilibrium spin polarization due to the relativistic spin-orbit coupling, resulting in a current induced spin-orbit torque (SOT) acting on the magnetization. In this paper we report the observation of the optical counterpart of SOT. At picosecond time-scales, we detect excitations of magnetization of a ferromagnetic semiconductor (Ga,Mn)As which are independent of the polarization of the pump laser pulses and are induced by non-equilibrium spin-orbit coupled photo-holes. △ Less

Submitted 2 July, 2012; originally announced July 2012.

Comments: 4 figure, supplementary information. arXiv admin note: text overlap with arXiv:1101.1049

Spin Hall transistor with electrical spin injection

Authors: K. Olejnik, J. Wunderlich, A. C. Irvine, R. P. Campion, V. P. Amin, Jairo Sinova, T. Jungwirth

Abstract: The realization of a viable semiconductor transistor and information processing devices based on the electron spin has fueled intense basic research of three key elements: injection, detection, and manipulation of spins in the semiconductor channel. The inverse spin Hall effect (iSHE) detection of spins injected optically in a 2D GaAs and manipulated by a gate-voltage dependent internal spin-orbit… ▽ More The realization of a viable semiconductor transistor and information processing devices based on the electron spin has fueled intense basic research of three key elements: injection, detection, and manipulation of spins in the semiconductor channel. The inverse spin Hall effect (iSHE) detection of spins injected optically in a 2D GaAs and manipulated by a gate-voltage dependent internal spin-orbit field has recently led to the experimental demonstration of a spin transistor logic device. The aim of the work presented here is to demonstrate in one device the iSHE detection combined with an electrical spin injection and manipulation. We use a 3D GaAs channel for which efficient electrical spin injection from Fe Schottky contacts has been demonstrated in previous works. In order to experimentally separate the strong ordinary Hall effect signal from the iSHE in the semiconductor channel we developed epitaxial ultrathin-Fe/GaAs contacts allowing for Hanle spin-precession measurements in applied in-plane magnetic fields. Electrical injection and detection is combined in our transistor structure with electrically manipulated spin distribution and spin current which, unlike the previously utilized electrical manipulations of the spin-orbit field or ballistic spin transit time, is well suited for the diffusive 3D GaAs spin channel. The magnitudes and external field dependencies of the measured signals are quantitatively analyzed using simultaneous spin detection by the non-local spin valve effect and modeled by solving the drift-diffusion and Hall-cross response equations for the parameters of the studied microstructure. △ Less

Submitted 4 February, 2012; originally announced February 2012.

Comments: 29 pages, 11 figures

Experimental observation of the optical spin transfer torque

Authors: P. Nemec, E. Rozkotova, N. Tesarova, F. Trojanek, E. De Ranieri, K. Olejnik, J. Zemen, V. Novak, M. Cukr, P. Maly, T. Jungwirth

Abstract: The spin transfer torque is a phenomenon in which angular momentum of a spin polarized electrical current entering a ferromagnet is transferred to the magnetization. The effect has opened a new research field of electrically driven magnetization dynamics in magnetic nanostructures and plays an important role in the development of a new generation of memory devices and tunable oscillators. Optical… ▽ More The spin transfer torque is a phenomenon in which angular momentum of a spin polarized electrical current entering a ferromagnet is transferred to the magnetization. The effect has opened a new research field of electrically driven magnetization dynamics in magnetic nanostructures and plays an important role in the development of a new generation of memory devices and tunable oscillators. Optical excitations of magnetic systems by laser pulses have been a separate research field whose aim is to explore magnetization dynamics at short time scales and enable ultrafast spintronic devices. We report the experimental observation of the optical spin transfer torque, predicted theoretically several years ago building the bridge between these two fields of spintronics research. In a pump-and-probe optical experiment we measure coherent spin precession in a (Ga,Mn)As ferromagnetic semiconductor excited by circularly polarized laser pulses. During the pump pulse, the spin angular momentum of photo-carriers generated by the absorbed light is transferred to the collective magnetization of the ferromagnet. We interpret the observed optical spin transfer torque and the magnetization precession it triggers on a quantitative microscopic level. Bringing the spin transfer physics into optics introduces a fundamentally distinct mechanism from the previously reported thermal and non-thermal laser excitations of magnets. Bringing optics into the field of spin transfer torques decreases by several orders of magnitude the timescales at which these phenomena are explored and utilized. △ Less

Submitted 6 January, 2012; originally announced January 2012.

Comments: 11 pages, 4 figures

Journal ref: Nature Physics 8, 411-415 (2012)

Non-thermal laser induced precession of magnetization in ferromagnetic semiconductor (Ga,Mn)As

Authors: P. Nemec, E. Rozkotova, N. Tesarova, F. Trojanek, K. Olejnik, J. Zemen, V. Novak, M. Cukr, P. Maly, T. Jungwirth

Abstract: Non-thermal laser induced spin excitations, recently discovered in conventional oxide and metal ferromagnets, open unprecedented opportunities for research and applications of ultrafast optical manipulation of magnetic systems. Ferromagnetic semiconductors, and (Ga,Mn)As in particular, should represent ideal systems for exploring this new field. Remarkably, the presence of non-thermal effects has… ▽ More Non-thermal laser induced spin excitations, recently discovered in conventional oxide and metal ferromagnets, open unprecedented opportunities for research and applications of ultrafast optical manipulation of magnetic systems. Ferromagnetic semiconductors, and (Ga,Mn)As in particular, should represent ideal systems for exploring this new field. Remarkably, the presence of non-thermal effects has remained one of the outstanding unresolved problems in the research of ferromagnetic semiconductors to date. Here we demonstrate that coherent magnetization dynamics can be excited in (Ga,Mn)As non-thermally by a transfer of angular momentum from circularly polarized femtosecond laser pulses and by a combination of non-thermal and thermal effects due to a transfer of energy from laser pulses. The thermal effects can be completely suppressed in piezo-electrically controlled samples. Our work is based on pump-and-probe measurements in a large set of (Ga,Mn)As epilayers and on systematic analysis of circular and linear magneto-optical coefficients. We provide microscopic theoretical interpretation of the experimental results. △ Less

Submitted 5 January, 2011; originally announced January 2011.

Comments: 14 pages, 4 figures, plus supplementary material

Systematic study of Mn-do** trends in optical properties of (Ga,Mn)As

Authors: T. Jungwirth, P. Horodyska, N. Tesarova, P. Nemec, J. Subrt, P. Maly, P. Kuzel, C. Kadlec, J. Masek, I. Nemec, V. Novak, K. Olejnik, Z. Soban, P. Vasek, P. Svoboda, Jairo Sinova

Abstract: We report on a systematic study of optical properties of (Ga,Mn)As epilayers spanning the wide range of accessible substitutional Mn_Ga do**s. The growth and post-growth annealing procedures were optimized for each nominal Mn do** in order to obtain films which are as close as possible to uniform uncompensated (Ga,Mn)As mixed crystals. We observe a broad maximum in the mid-infrared absorption… ▽ More We report on a systematic study of optical properties of (Ga,Mn)As epilayers spanning the wide range of accessible substitutional Mn_Ga do**s. The growth and post-growth annealing procedures were optimized for each nominal Mn do** in order to obtain films which are as close as possible to uniform uncompensated (Ga,Mn)As mixed crystals. We observe a broad maximum in the mid-infrared absorption spectra whose position exhibits a prevailing blue-shift for increasing Mn-do**. In the visible range, a peak in the magnetic circular dichroism blue shifts with increasing Mn-do**. These observed trends confirm that disorder-broadened valence band states provide a better one-particle representation for the electronic structure of high-doped (Ga,Mn)As with metallic conduction than an energy spectrum assuming the Fermi level pinned in a narrow impurity band. △ Less

Submitted 27 July, 2010; originally announced July 2010.

Comments: 22 pages, 14 figures

Strain control of magnetic anisotropy in (Ga,Mn)As microbars

Authors: C. King, J. Zemen, K. Olejník, L. Horák, J. Haigh, V. Novák, J. Kučera, V. Holý, R. P. Campion, B. L. Gallagher, T. Jungwirth

Abstract: We present an experimental and theoretical study of magnetocrystalline anisotropies in arrays of bars patterned lithographically into (Ga,Mn)As epilayers grown under compressive lattice strain. Structural properties of the (Ga,Mn)As microbars are investigated by high-resolution X-ray diffraction measurements. The experimental data, showing strong strain relaxation effects, are in good agreement wi… ▽ More We present an experimental and theoretical study of magnetocrystalline anisotropies in arrays of bars patterned lithographically into (Ga,Mn)As epilayers grown under compressive lattice strain. Structural properties of the (Ga,Mn)As microbars are investigated by high-resolution X-ray diffraction measurements. The experimental data, showing strong strain relaxation effects, are in good agreement with finite element simulations. SQUID magnetization measurements are performed to study the control of magnetic anisotropy in (Ga,Mn)As by the lithographically induced strain relaxation of the microbars. Microscopic theoretical modeling of the anisotropy is performed based on the mean-field kinetic-exchange model of the ferromagnetic spin-orbit coupled band structure of (Ga,Mn)As. Based on the overall agreement between experimental data and theoretical modeling we conclude that the micropatterning induced anisotropies are of the magnetocrystalline, spin-orbit coupling origin. △ Less

Submitted 16 July, 2010; originally announced July 2010.

Comments: 11 pages, 18 figures

Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device

Authors: K. Y. Wang, K. W. Edmonds, A. C. Irvine, G. Tatara, E. De Ranieri, J. Wunderlich, K. Olejnik, A. W. Rushforth, R. P. Campion, D. A. Williams, C. T. Foxon, B. L. Gallagher

Abstract: Current-driven magnetic domain wall motion is demonstrated in the quaternary ferromagnetic semiconductor (Ga,Mn)(As,P) at temperatures well below the ferromagnetic transition temperature, with critical currents of the order 10^5Acm^-2. This is enabled by a much weaker domain wall pinning compared to (Ga,Mn)As layers grown on a strain-relaxed buffer layer. The critical current is shown to be compar… ▽ More Current-driven magnetic domain wall motion is demonstrated in the quaternary ferromagnetic semiconductor (Ga,Mn)(As,P) at temperatures well below the ferromagnetic transition temperature, with critical currents of the order 10^5Acm^-2. This is enabled by a much weaker domain wall pinning compared to (Ga,Mn)As layers grown on a strain-relaxed buffer layer. The critical current is shown to be comparable with theoretical predictions. The wide temperature range over which domain wall motion can be achieved indicates that this is a promising system for develo** an improved understanding of spin-transfer torque in systems with strong spin-orbit interaction. △ Less

Submitted 30 December, 2010; v1 submitted 6 May, 2010; originally announced May 2010.

Comments: 12 pages, 3 figures

Journal ref: APPLIED PHYSICS LETTERS 97, 262102 (2010)

Domain Wall Resistance in Perpendicular (Ga,Mn)As: dependence on pinning

Authors: K. Y. Wang, K. W. Edmonds, A. C. Irvine, J. Wunderlich, K. Olejnik, A. W. Rushforth, R. P. Campion, D. A. Williams, C. T. Foxon, B. L. Gallagher

Abstract: We have investigated the domain wall resistance for two types of domain walls in a (Ga,Mn)As Hall bar with perpendicular magnetization. A sizeable positive intrinsic DWR is inferred for domain walls that are pinned at an etching step, which is quite consistent with earlier observations. However, much lower intrinsic domain wall resistance is obtained when domain walls are formed by pinning lines i… ▽ More We have investigated the domain wall resistance for two types of domain walls in a (Ga,Mn)As Hall bar with perpendicular magnetization. A sizeable positive intrinsic DWR is inferred for domain walls that are pinned at an etching step, which is quite consistent with earlier observations. However, much lower intrinsic domain wall resistance is obtained when domain walls are formed by pinning lines in unetched material. This indicates that the spin transport across a domain wall is strongly influenced by the nature of the pinning. △ Less

Submitted 29 December, 2010; v1 submitted 15 January, 2010; originally announced January 2010.

Comments: 9 pages, 3 figures

Journal ref: J. Magn. Magn. Mater 322,3481(2010)

Exchange bias of a ferromagnetic semiconductor by a ferromagnetic metal

Authors: K. Olejnik, P. Wadley, J. A Haigh, K. W. Edmonds, R. P. Campion, A. W. Rushforth, B. L. Gallagher, C. T. Foxon, T. Jungwirth, J. Wunderlich, S. S. Dhesi, S. Cavill, G. van der Laan, E Arenholz

Abstract: We demonstrate an exchange bias in (Ga,Mn)As induced by antiferromagnetic coupling to a thin overlayer of Fe. Bias fields of up to 240 Oe are observed. Using element-specific x-ray magnetic circular dichroism measurements, we distinguish a strongly exchange coupled (Ga,Mn)As interface layer in addition to the biassed bulk of the (Ga,Mn)As film. The interface layer remains polarized at room tempe… ▽ More We demonstrate an exchange bias in (Ga,Mn)As induced by antiferromagnetic coupling to a thin overlayer of Fe. Bias fields of up to 240 Oe are observed. Using element-specific x-ray magnetic circular dichroism measurements, we distinguish a strongly exchange coupled (Ga,Mn)As interface layer in addition to the biassed bulk of the (Ga,Mn)As film. The interface layer remains polarized at room temperature. △ Less

Submitted 14 January, 2010; originally announced January 2010.

Comments: 3 figures, submitted to Physical Review B

Journal ref: Phys. Rev. B 81, 104402 (2010)

Magneto crystalline anisotropies in (Ga,Mn)As: A systematic theoretical study and comparison with experiment

Authors: J. Zemen, J. Kucera, K. Olejnik, T. Jungwirth

Abstract: We present a theoretical survey of magnetocrystalline anisotropies in (Ga,Mn)As epilayers and compare the calculations to available experimental data. Our model is based on an envelope function description of the valence band holes and a spin representation for their kinetic-exchange interaction with localised electrons on Mn ions, treated in the mean-field approximation. For epilayers with grow… ▽ More We present a theoretical survey of magnetocrystalline anisotropies in (Ga,Mn)As epilayers and compare the calculations to available experimental data. Our model is based on an envelope function description of the valence band holes and a spin representation for their kinetic-exchange interaction with localised electrons on Mn ions, treated in the mean-field approximation. For epilayers with growth induced lattice-matching strains we study in-plane to out-of-plane easy-axis reorientations as a function of Mn local-moment concentration, hole concentration, and temperature. Next we focus on the competition of in-plane cubic and uniaxial anisotropies. We add an in-plane shear strain to the effective Hamiltonian in order to capture measured data in bare, unpatterned epilayers, and we provide microscopic justification for this approach. The model is then extended by an in-plane uniaxial strain and used to directly describe experiments with strains controlled by postgrowth lithography or attaching a piezo stressor. The calculated easy-axis directions and anisotropy fields are in semiquantitative agreement with experiment in a wide parameter range. △ Less

Submitted 6 April, 2009; originally announced April 2009.

Dam** and magnetic anisotropy of ferromagnetic GaMnAs thin films

Authors: Kh. Khazen, H. J. von Bardeleben, M. Cubukcu, J. L. Cantin, V. Novak, K. Olejnik, M. Cukr, L. Thevenard, A. Lemaitre

Abstract: The magnetic properties of annealed, epitaxial Ga0.93Mn0.07As layers under tensile and compressive stress have been investigated by X-band (9GHz) and Q-band (35GHz) ferromagnetic resonance (FMR) spectroscopy. From the analysis of the linewidths of the uniform mode spectra the FMR Gilbert dam** factor "alpha" has been determined. At T=4K we obtain a minimum dam** factor of "alpha" = 0.003 for… ▽ More The magnetic properties of annealed, epitaxial Ga0.93Mn0.07As layers under tensile and compressive stress have been investigated by X-band (9GHz) and Q-band (35GHz) ferromagnetic resonance (FMR) spectroscopy. From the analysis of the linewidths of the uniform mode spectra the FMR Gilbert dam** factor "alpha" has been determined. At T=4K we obtain a minimum dam** factor of "alpha" = 0.003 for the compressively stressed layer. Its value is not isotropic. It has a minimum value for the easy axes orientations of the magnetic field and increases with the measuring temperature. Its average value is for both type of films of the order of 0.01 in spite of strong differences in the inhomogeneous linewidth which vary between 20 Oe and 600 Oe for the layers grown on GaAs and GaInAs substrates respectively. △ Less

Submitted 30 September, 2008; v1 submitted 26 September, 2008; originally announced September 2008.

Comments: 23 pages, 2 tables, 13 figures,

Coherent control of magnetization precession in ferromagnetic semiconductor (Ga,Mn)As

Authors: E. Rozkotova, P. Nemec, N. Tesarova, P. Maly, V. Novak, K. Olejnik, M. Cukr, T. Jungwirth

Abstract: We report single-color, time resolved magneto-optical measurements in ferromagnetic semiconductor (Ga,Mn)As. We demonstrate coherent optical control of the magnetization precession by applying two successive ultrashort laser pulses. The magnetic field and temperature dependent experiments reveal the collective Mn-moment nature of the oscillatory part of the time-dependent Kerr rotation, as well… ▽ More We report single-color, time resolved magneto-optical measurements in ferromagnetic semiconductor (Ga,Mn)As. We demonstrate coherent optical control of the magnetization precession by applying two successive ultrashort laser pulses. The magnetic field and temperature dependent experiments reveal the collective Mn-moment nature of the oscillatory part of the time-dependent Kerr rotation, as well as contributions to the magneto-optical signal that are not connected with the magnetization dynamics. △ Less

Submitted 2 December, 2008; v1 submitted 27 August, 2008; originally announced August 2008.

Comments: 6 pages, 3 figures, accepted in Applied Physics Letters

Journal ref: Applied Physics Letters 93, 232505 (2008).

Low voltage control of ferromagnetism in a semiconductor p-n junction

Authors: M. H. S. Owen, J. Wunderlich, V. Novak, K. Olejnik, 3 J. Zemen, K. Vyborny, S. Ogawa, A. C. Irvine, A. J. Ferguson, H. Sirringhaus, T. Jungwirth

Abstract: The concept of low-voltage depletion and accumulation of electron charge in semiconductors, utilized in field-effect transistors (FETs), is one of the cornerstones of current information processing technologies. Spintronics which is based on manipulating the collective state of electron spins in a ferromagnet provides complementary technologies for reading magnetic bits or for the solid-state me… ▽ More The concept of low-voltage depletion and accumulation of electron charge in semiconductors, utilized in field-effect transistors (FETs), is one of the cornerstones of current information processing technologies. Spintronics which is based on manipulating the collective state of electron spins in a ferromagnet provides complementary technologies for reading magnetic bits or for the solid-state memories. The integration of these two distinct areas of microelectronics in one physical element, with a potentially major impact on the power consumption and scalability of future devices, requires to find efficient means for controlling magnetization electrically. Current induced magnetization switching phenomena represent a promising step towards this goal, however, they relay on relatively large current densities. The direct approach of controlling the magnetization by low-voltage charge depletion effects is seemingly unfeasible as the two worlds of semiconductors and metal ferromagnets are separated by many orders of magnitude in their typical carrier concentrations. Here we demonstrate that this concept is viable by reporting persistent magnetization switchings induced by short electrical pulses of a few volts in an all-semiconductor, ferromagnetic p-n junction. △ Less

Submitted 6 July, 2008; originally announced July 2008.

Comments: 11 pages, 4 figures

K-edge XANES of substitutional and interstitial Mn atoms in (Ga,Mn)As

Authors: N. A. Goncharuk, L. Smrcka, J. Kucera, K. Olejnik, V. Novak, Z. Matej, L. Nichtova, V. Holy

Abstract: This work reports theoretical and experimental study of the X-ray absorption near-edge structure (XANES) at the Mn K-edge in (Ga,Mn)As diluted magnetic semiconductors. The spectra have been calculated from the first-principles using FLAPW including the core-hole effect, a special attention has been paid to consequences of coexistence of Mn impurities in substitutional and tetrahedral interstitial… ▽ More This work reports theoretical and experimental study of the X-ray absorption near-edge structure (XANES) at the Mn K-edge in (Ga,Mn)As diluted magnetic semiconductors. The spectra have been calculated from the first-principles using FLAPW including the core-hole effect, a special attention has been paid to consequences of coexistence of Mn impurities in substitutional and tetrahedral interstitial positions. We have performed quantitative component analysis of experimental spectra collected on the (Ga,Mn)As samples before/after annealing and etching, with the aim to determine the proportion of Mn impurity configurations. Comparison of the experimental data with theoretical computations indicates that even after annealing and etching some Mn atoms still reside in interstitial sites, although the concentration of interstitial defects has been reduced by annealing. △ Less

Submitted 23 March, 2010; v1 submitted 7 May, 2008; originally announced May 2008.

Comments: 8 pages, 10 figures

Curie point singularity in the temperature derivative of resistivity in (Ga,Mn)As

Authors: V. Novak, K. Olejnik, J. Wunderlich, M. Cukr, K. Vyborny, A. W. Rushforth, K. W. Edmonds, R. P. Campion, B. L. Gallagher, Jairo Sinova, T. Jungwirth

Abstract: We observe a singularity in the temperature derivative $dρ/dT$ of resistivity at the Curie point of high-quality (Ga,Mn)As ferromagnetic semiconductors with $T_c$'s ranging from approximately 80 to 185 K. The character of the anomaly is sharply distinct from the critical contribution to transport in conventional dense-moment magnetic semiconductors and is reminiscent of the $dρ/dT$ singularity i… ▽ More We observe a singularity in the temperature derivative $dρ/dT$ of resistivity at the Curie point of high-quality (Ga,Mn)As ferromagnetic semiconductors with $T_c$'s ranging from approximately 80 to 185 K. The character of the anomaly is sharply distinct from the critical contribution to transport in conventional dense-moment magnetic semiconductors and is reminiscent of the $dρ/dT$ singularity in transition metal ferromagnets. Within the critical region accessible in our experiments, the temperature dependence on the ferromagnetic side can be explained by dominant scattering from uncorrelated spin fluctuations. The singular behavior of $dρ/dT$ on the paramagnetic side points to the important role of short-range correlated spin fluctuations. △ Less

Submitted 27 June, 2008; v1 submitted 9 April, 2008; originally announced April 2008.

Comments: 4 pages, 3 figures

Journal ref: Phys.Rev.Letters 101, 077201 (2008)

Laser-induced Precession of Magnetization in GaMnAs

Authors: E. Rozkotova, P. Nemec, D. Sprinzl, P. Horodyska, F. Trojanek, P. Maly, V. Novak, K. Olejnik, M. Cukr, T. Jungwirth

Abstract: We report on the photo-induced precession of the ferromagnetically coupled Mn spins in (Ga,Mn)As, which is observed even with no external magnetic field applied. We concentrate on various experimental aspects of the time-resolved magneto-optical Kerr effect (TR-MOKE) technique that can be used to clarify the origin of the detected signals. We show that the measured data typically consist of seve… ▽ More We report on the photo-induced precession of the ferromagnetically coupled Mn spins in (Ga,Mn)As, which is observed even with no external magnetic field applied. We concentrate on various experimental aspects of the time-resolved magneto-optical Kerr effect (TR-MOKE) technique that can be used to clarify the origin of the detected signals. We show that the measured data typically consist of several different contributions, among which only the oscillatory signal is directly connected with the ferromagnetic order in the sample. △ Less

Submitted 3 March, 2008; originally announced March 2008.

Comments: 4 pages, 5 figures

Journal ref: IEEE Transactions on Magnetics 44, 2674-2677 (2008).

Enhanced annealing, high Curie temperature and low-voltage gating in (Ga,Mn)As: A surface oxide control study

Authors: K. Olejnik, M. H. S. Owen, V. Novak, J. Masek, A. C. Irvine, J. Wunderlich, T. Jungwirth

Abstract: (Ga,Mn)As and related diluted magnetic semiconductors play a major role in spintronics research because of their potential to combine ferromagnetism and semiconducting properties in one physical system. Ferromagnetism requires ~1-10% of substitutional Mn_Ga. Unintentional defects formed during growth at these high do**s significantly suppress the Curie temperature. We present experiments in wh… ▽ More (Ga,Mn)As and related diluted magnetic semiconductors play a major role in spintronics research because of their potential to combine ferromagnetism and semiconducting properties in one physical system. Ferromagnetism requires ~1-10% of substitutional Mn_Ga. Unintentional defects formed during growth at these high do**s significantly suppress the Curie temperature. We present experiments in which by etching the (Ga,Mn)As surface oxide we achieve a dramatic reduction of annealing times necessary to optimize the ferromagnetic film after growth, and report Curie temperature of 180 K at approximately 8% of Mn_Ga. Our study elucidates the mechanism controlling the removal of the most detrimental, interstitial Mn defect. The limits and utility of electrical gating of the highly-doped (Ga,Mn)As semiconductor are not yet established; so far electric-field effects have been demonstrated on magnetization with tens of Volts applied on a top-gate, field effect transistor structure. In the second part of the paper we present a back-gate, n-GaAs/AlAs/GaMnAs transistor operating at a few Volts. Inspired by the etching study of (Ga,Mn)As films we apply the oxide-etching/re-oxidation procedure to reduce the thickness (arial density of carriers) of the (Ga,Mn)As and observe a large enhancement of the gating efficiency. We report gatable spintronic characteristics on a series of anisotropic magnetoresistance measurements. △ Less

Submitted 14 February, 2008; originally announced February 2008.

Comments: 13 pages, 4 figures

Light-induced magnetization precession in GaMnAs

Authors: E. Rozkotova, P. Nemec, P. Horodyska, D. Sprinzl, F. Trojanek, P. Maly, V. Novak, K. Olejnik, M. Cukr, T. Jungwirth

Abstract: We report dynamics of the transient polar Kerr rotation (KR) and of the transient reflectivity induced by femtosecond laser pulses in ferromagnetic (Ga,Mn)As with no external magnetic field applied. It is shown that the measured KR signal consist of several different contributions, among which only the oscillatory signal is directly connected with the ferromagnetic order in (Ga,Mn)As. The origin… ▽ More We report dynamics of the transient polar Kerr rotation (KR) and of the transient reflectivity induced by femtosecond laser pulses in ferromagnetic (Ga,Mn)As with no external magnetic field applied. It is shown that the measured KR signal consist of several different contributions, among which only the oscillatory signal is directly connected with the ferromagnetic order in (Ga,Mn)As. The origin of the light-induced magnetization precession is discussed and the magnetization precession dam** (Gilbert dam**) is found to be strongly influenced by annealing of the sample. △ Less

Submitted 10 March, 2008; v1 submitted 14 February, 2008; originally announced February 2008.

Comments: 6 pages, 4 figures. accepted in Applied Physics Letters

Journal ref: Appl. Phys. Lett. 92, 122507 (2008)