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MIRO-like oscillations of magneto-resistivity in GaAs heterostructures induced by THz radiation
Authors:
T. Herrmann,
I. A. Dmitriev,
D. A. Kozlov,
M. Schneider,
B. Jentzsch,
Z. D. Kvon,
P. Olbrich,
V. V. Bel`kov,
A. Bayer,
D. Schuh,
D. Bougeard,
T. Kuczmik,
M. Oltscher,
D. Weiss,
S. D. Ganichev
Abstract:
We report on the study of terahertz radiation induced MIRO-like oscillations of magneto-resistivity in GaAs heterostructures. Our experiments provide an answer on two most intriguing questions - effect of radiation helicity and the role of the edges - yielding crucial information for understanding of the MIRO origin. Moreover, we demonstrate that the range of materials exhibiting radiation-induced…
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We report on the study of terahertz radiation induced MIRO-like oscillations of magneto-resistivity in GaAs heterostructures. Our experiments provide an answer on two most intriguing questions - effect of radiation helicity and the role of the edges - yielding crucial information for understanding of the MIRO origin. Moreover, we demonstrate that the range of materials exhibiting radiation-induced magneto-oscillations can be largely extended by using high-frequency radiation.
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Submitted 5 March, 2016;
originally announced March 2016.
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Photon Drag Effect in (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ Three Dimensional Topological Insulators
Authors:
H. Plank,
L. E. Golub,
S. Bauer,
V. V. Bel'kov,
T. Herrmann,
P. Olbrich,
M. Eschbach,
L. Plucinski,
J. Kampmeier,
M. Lanius,
G. Mussler,
D. Grützmacher,
S. D. Ganichev
Abstract:
We report on the observation of a terahertz radiation induced photon drag effect in epitaxially grown $n$- and $p$-type (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ three dimensional topological insulators with different antimony concentrations $x$ varying from 0 to 1. We demonstrate that the excitation with polarized terahertz radiation results in a $dc$ electric photocurrent. While at normal incidence a c…
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We report on the observation of a terahertz radiation induced photon drag effect in epitaxially grown $n$- and $p$-type (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ three dimensional topological insulators with different antimony concentrations $x$ varying from 0 to 1. We demonstrate that the excitation with polarized terahertz radiation results in a $dc$ electric photocurrent. While at normal incidence a current arises due to the photogalvanic effect in the surface states, at oblique incidence it is outweighed by the trigonal photon drag effect. The developed microscopic model and theory show that the photon drag photocurrent is due to the dynamical momentum alignment by time and space dependent radiation electric field and implies the radiation induced asymmetric scattering in the electron momentum space.
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Submitted 22 December, 2015;
originally announced December 2015.
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Terahertz ratchet effects in graphene with a lateral superlattice
Authors:
P. Olbrich,
J. Kamann,
M. König,
J. Munzert,
L. Tutsch,
J. Eroms,
D. Weiss,
Ming-Hao Liu,
L. E. Golub,
E. L. Ivchenko,
V. V. Popov,
D. V. Fateev,
K. V. Mashinsky,
F. Fromm,
Th. Seyller,
S. D. Ganichev
Abstract:
Experimental and theoretical studies on ratchet effects in graphene with a lateral superlattice excited by alternating electric fields of terahertz frequency range are presented. A lateral superlatice deposited on top of monolayer graphene is formed either by periodically repeated metal stripes having different widths and spacings or by inter-digitated comb-like dual-grating-gate (DGG) structures.…
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Experimental and theoretical studies on ratchet effects in graphene with a lateral superlattice excited by alternating electric fields of terahertz frequency range are presented. A lateral superlatice deposited on top of monolayer graphene is formed either by periodically repeated metal stripes having different widths and spacings or by inter-digitated comb-like dual-grating-gate (DGG) structures. We show that the ratchet photocurrent excited by terahertz radiation and sensitive to the radiation polarization state can be efficiently controlled by the back gate driving the system through the Dirac point as well as by the lateral asymmetry varied by applying unequal voltages to the DGG subgratings. The ratchet photocurrent includes the Seebeck thermoratchet effect as well as the effects of "linear" and "circular" ratchets, sensitive to the corresponding polarization of the driving electromagnetic force. The experimental data are analyzed for the electronic and plasmonic ratchets taking into account the calculated potential profile and the near field acting on carriers in graphene. We show that the photocurrent generation is based on a combined action of a spatially periodic in-plane potential and the spatially modulated light due to the near field effects of the light diffraction.
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Submitted 27 October, 2015;
originally announced October 2015.
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Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors
Authors:
P. Faltermeier,
P. Olbrich,
W. Probst,
L. Schell,
T. Watanabe,
S. A. Boubanga-Tombet,
T. Otsuji,
S. D. Ganichev
Abstract:
We report on the observation of a radiation helicity sensitive photocurrent excited by terahertz (THz) radiation in dual-grating-gate (DGG) InAlAs/InGaAs/InAlAs/InP high electron mobility transistors (HEMT). For a circular polarization the current measured between source and drain contacts changes its sign with the inversion of the radiation helicity. For elliptically polarized radiation the total…
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We report on the observation of a radiation helicity sensitive photocurrent excited by terahertz (THz) radiation in dual-grating-gate (DGG) InAlAs/InGaAs/InAlAs/InP high electron mobility transistors (HEMT). For a circular polarization the current measured between source and drain contacts changes its sign with the inversion of the radiation helicity. For elliptically polarized radiation the total current is described by superposition of the Stokes parameters with different weights. Moreover, by variation of gate voltages applied to individual gratings the photocurrent can be defined either by the Stokes parameter defining the radiation helicity or those for linear polarization. We show that artificial non-centrosymmetric microperiodic structures with a two-dimensional electron system excited by THz radiation exhibit a dc photocurrent caused by the combined action of a spatially periodic in-plane potential and spatially modulated light. The results provide a proof of principle for the application of DGG HEMT for all-electric detection of the radiation's polarization state.
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Submitted 6 July, 2015;
originally announced July 2015.
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Cyclotron Resonance Assisted Photocurrents in Surface States of a 3D Topological Insulator Based on a Strained High Mobility HgTe Film
Authors:
K. -M. Dantscher,
D. A. Kozlov,
P. Olbrich,
C. Zoth,
P. Faltermeier,
M. Lindner,
G. V. Budkin,
S. A. Tarasenko,
V. V. Belkov,
Z. D. Kvon,
N. N. Mikhailov,
S. A. Dvoretsky,
D. Weiss,
B. Jenichen,
S. D. Ganichev
Abstract:
We report on the observation of cyclotron resonance induced photocurrents, excited by continuous wave terahertz radiation, in a 3D topological insulator (TI) based on an 80 nm strained HgTe film. The analysis of the photocurrent formation is supported by complimentary measurements of magneto-transport and radiation transmission. We demonstrate that the photocurrent is generated in the topologicall…
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We report on the observation of cyclotron resonance induced photocurrents, excited by continuous wave terahertz radiation, in a 3D topological insulator (TI) based on an 80 nm strained HgTe film. The analysis of the photocurrent formation is supported by complimentary measurements of magneto-transport and radiation transmission. We demonstrate that the photocurrent is generated in the topologically protected surface states. Studying the resonance response in a gated sample we examined the behavior of the photocurrent, which enables us to extract the mobility and the cyclotron mass as a function of the Fermi energy. For high gate voltages we also detected cyclotron resonance (CR) of bulk carriers, with a mass about two times larger than that obtained for the surface states. The origin of the CR assisted photocurrent is discussed in terms of asymmetric scattering of TI surface carriers in the momentum space. Furthermore, we show that studying the photocurrent in gated samples provides a sensitive method to probe the effective masses and the mobility of 2D Dirac surface states, when the Fermi level lies in the bulk energy gap or even in the conduction band.
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Submitted 24 March, 2015;
originally announced March 2015.
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Quantum Oscillations of Photocurrents in HgTe Quantum Wells with Dirac and Parabolic Dispersions
Authors:
C. Zoth,
P. Olbrich,
P. Vierling,
K. -M. Dantscher,
V. V. Bel'kov,
M. A. Semina,
M. M. Glazov,
L. E. Golub,
D. A. Kozlov,
Z. D. Kvon,
N. N. Mikhailov,
S. A. Dvoretsky,
S. D. Ganichev
Abstract:
We report on the observation of magneto-oscillations of terahertz radiation induced photocurrent in HgTe/HgCdTe quantum wells (QWs) of different widths, which are characterized by a Dirac-like, inverted and normal parabolic band structure. The photocurrent data are accompanied by measurements of photoresistance (photoconductivity), radiation transmission, as well as magneto-transport. We develop a…
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We report on the observation of magneto-oscillations of terahertz radiation induced photocurrent in HgTe/HgCdTe quantum wells (QWs) of different widths, which are characterized by a Dirac-like, inverted and normal parabolic band structure. The photocurrent data are accompanied by measurements of photoresistance (photoconductivity), radiation transmission, as well as magneto-transport. We develop a microscopic model of a cyclotron-resonance assisted photogalvanic effect, which describes main experimental findings. We demonstrate that the quantum oscillations of the photocurrent are caused by the crossing of Fermi level by Landau levels resulting in the oscillations of spin polarization and electron mobilities in spin subbands. Theory explains a photocurrent direction reversal with the variation of magnetic field observed in experiment. We describe the photoconductivity oscillations related with the thermal suppression of the Shubnikov-de Haas effect.
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Submitted 7 July, 2014; v1 submitted 4 July, 2014;
originally announced July 2014.
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Room temperature high frequency transport of Dirac fermions in epitaxially grown Sb_2Te_3 based topological insulators
Authors:
P. Olbrich,
L. E. Golub,
T. Herrmann,
S. N. Danilov,
H. Plank,
V. V. Bel'kov,
G. Mussler,
Ch. Weyrich,
C. M. Schneider,
J. Kampmeier,
D. Grützmacher,
L. Plucinski,
M. Eschbach,
S. D. Ganichev
Abstract:
We report on the observation of photogalvanic effects in epitaxially grown Sb_2Te_3 three-dimensional (3D) topological insulators (TI). We show that asymmetric scattering of Dirac electrons driven back and forth by the terahertz electric field results in a dc electric current. Due to the "symmetry filtration" the dc current is generated in the surface electrons only and provides an opto-electronic…
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We report on the observation of photogalvanic effects in epitaxially grown Sb_2Te_3 three-dimensional (3D) topological insulators (TI). We show that asymmetric scattering of Dirac electrons driven back and forth by the terahertz electric field results in a dc electric current. Due to the "symmetry filtration" the dc current is generated in the surface electrons only and provides an opto-electronic access to probe the electric transport in TI, surface domains orientation and details of electron scattering even in 3D TI at room temperature where conventional surface electron transport is usually hindered by the high carrier density in the bulk.
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Submitted 28 February, 2014;
originally announced February 2014.
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Probing of electromagnetic fields on atomic scale by photoelectric phenomena in graphene
Authors:
Peter Olbrich,
Christoph Drexler,
Leonid E. Golub,
Sergey N. Danilov,
Vadim A. Shalygin,
Rositza Yakimova,
Samuel Lara-Avila,
Sergey Kubatkin,
Britta Redlich,
Rupert Huber,
Sergey D. Ganichev
Abstract:
We report on the observation of the reststrahl band assisted photocurrents in epitaxial graphene on SiC excited by infrared radiation. The peculiar spectral dependence for frequencies lying within the reststrahl band of the SiC substrate provides a direct and noninvasive way to probe the electric field magnitude at atomic distances from the material's surface. Furthermore our results reveal that n…
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We report on the observation of the reststrahl band assisted photocurrents in epitaxial graphene on SiC excited by infrared radiation. The peculiar spectral dependence for frequencies lying within the reststrahl band of the SiC substrate provides a direct and noninvasive way to probe the electric field magnitude at atomic distances from the material's surface. Furthermore our results reveal that nonlinear optical and optoelectronic phenomena in 2D crystals and other atomic scale structures can be giantly enhanced by a proper combination of the spectral range and substrate material.
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Submitted 1 August, 2013;
originally announced August 2013.
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Giant spin-polarized current in a Dirac fermion system at cyclotron resonance
Authors:
P. Olbrich,
C. Zoth,
P. Vierling,
K. -M. Dantscher,
G. V. Budkin,
S. A. Tarasenko,
V. V. Bel'kov,
D. A. Kozlov,
Z. D. Kvon,
N. N. Mikhailov,
S. A. Dvoretsky,
S. D. Ganichev
Abstract:
We report on the observation of the giant spin-polarized photocurrent in HgTe/HgCdTe quantum well (QW) of critical thickness at which a Dirac spectrum emerges. Exciting QW of 6.6 nm width by terahertz (THz) radiation and swee** magnetic field we detected a resonant photocurrent. Remarkably, the position of the resonance can be tuned from negative (-0.4 T) to positive (up to 1.2 T) magnetic field…
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We report on the observation of the giant spin-polarized photocurrent in HgTe/HgCdTe quantum well (QW) of critical thickness at which a Dirac spectrum emerges. Exciting QW of 6.6 nm width by terahertz (THz) radiation and swee** magnetic field we detected a resonant photocurrent. Remarkably, the position of the resonance can be tuned from negative (-0.4 T) to positive (up to 1.2 T) magnetic fields by means of optical gating. The photocurent data, accompanied by measurements of radiation transmission as well as Shubnikov-de Haas and quantum Hall effects, give an evidence that the enhancement of the photocurrent is caused by cyclotron resonance in a Dirac fermion system. The developed theory shows that the current is spin polarized and originates from the spin dependent scattering of charge carriers heated by the radiation.
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Submitted 19 January, 2013;
originally announced January 2013.
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Gate-controlled Persistent Spin Helix State in Materials with Strong Spin-Orbit Interaction
Authors:
M. Kohda,
V. Lechner,
Y. Kunihashi,
T. Dollinger,
P. Olbrich,
C. Schönhuber,
I. Caspers,
V. V. Bel'kov,
L. E. Golub,
D. Weiss,
K. Richter,
J. Nitta,
S. D. Ganichev
Abstract:
In layered semiconductors with spin-orbit interaction (SOI) a persistent spin helix (PSH) state with suppressed spin relaxation is expected if the strengths of the Rashba and Dresselhaus SOI terms, alpha and beta, are equal. Here we demonstrate gate control and detection of the PSH in two-dimensional electron systems with strong SOI including terms cubic in momentum. We consider strain-free InGaAs…
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In layered semiconductors with spin-orbit interaction (SOI) a persistent spin helix (PSH) state with suppressed spin relaxation is expected if the strengths of the Rashba and Dresselhaus SOI terms, alpha and beta, are equal. Here we demonstrate gate control and detection of the PSH in two-dimensional electron systems with strong SOI including terms cubic in momentum. We consider strain-free InGaAs/InAlAs quantum wells and first determine alpha/beta ~ 1 for non-gated structures by measuring the spin-galvanic and circular photogalvanic effects. Upon gate tuning the Rashba SOI strength in a complementary magneto-transport experiment, we then monitor the complete crossover from weak antilocalization via weak localization to weak antilocalization, where the emergence of weak localization reflects a PSH type state. A corresponding numerical analysis reveals that such a PSH type state indeed prevails even in presence of strong cubic SOI, however no longer at alpha = beta.
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Submitted 25 May, 2012;
originally announced May 2012.
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Spin-polarized electric currents in diluted magnetic semiconductor heterostructures induced by terahertz and microwave radiation
Authors:
P. Olbrich,
C. Zoth,
P. Lutz,
C. Drexler,
V. V. Bel'kov,
Ya. V. Terent'ev,
S. A. Tarasenko,
A. N. Semenov,
S. V. Ivanov,
D. R. Yakovlev,
T. Wojtowicz,
U. Wurstbauer,
D. Schuh,
S. D. Ganichev
Abstract:
We report on the study of spin-polarized electric currents in diluted magnetic semiconductor (DMS) quantum wells subjected to an in-plane external magnetic field and illuminated by microwave or terahertz radiation. The effect is studied in (Cd,Mn)Te/(Cd,Mg)Te quantum wells (QWs) and (In,Ga)As/InAlAs:Mn QWs belonging to the well known II-VI and III-V DMS material systems, as well as, in heterovalen…
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We report on the study of spin-polarized electric currents in diluted magnetic semiconductor (DMS) quantum wells subjected to an in-plane external magnetic field and illuminated by microwave or terahertz radiation. The effect is studied in (Cd,Mn)Te/(Cd,Mg)Te quantum wells (QWs) and (In,Ga)As/InAlAs:Mn QWs belonging to the well known II-VI and III-V DMS material systems, as well as, in heterovalent AlSb/InAs/(Zn,Mn)Te QWs which represent a promising combination of II-VI and III-V semiconductors. Experimental data and developed theory demonstrate that the photocurrent originates from a spin-dependent scattering of free carriers by static defects or phonons in the Drude absorption of radiation and subsequent relaxation of carriers. We show that in DMS structures the efficiency of the current generation is drastically enhanced compared to non-magnetic semiconductors. The enhancement is caused by the exchange interaction of carrier spins with localized spins of magnetic ions resulting, on the one hand, in the giant Zeeman spin-splitting, and, on the other hand, in the spin-dependent carrier scattering by localized Mn2+ ions polarized by an external magnetic field.
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Submitted 27 April, 2012;
originally announced April 2012.
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Helicity sensitive terahertz radiation detection by field effect transistors
Authors:
Christoph Drexler,
Nina Dyakonova,
Peter Olbrich,
Johannes Karch,
Michael Schafberger,
Krzysztof Karpierz,
Yuri Mityagin,
Masha Lifshits,
Frederic Teppe,
Oleg Klimenko,
Yahia Meziani,
Wojciech Knap,
Sergey Ganichev
Abstract:
Terahertz light helicity sensitive photoresponse in GaAs/AlGaAs high electron mobility transistors. The helicity dependent detection mechanism is interpreted as an interference of plasma oscillations in the channel of the field-effect-transistors (generalized Dyakonov-Shur model). The observed helicity dependent photoresponse is by several orders of magnitude higher than any earlier reported one.…
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Terahertz light helicity sensitive photoresponse in GaAs/AlGaAs high electron mobility transistors. The helicity dependent detection mechanism is interpreted as an interference of plasma oscillations in the channel of the field-effect-transistors (generalized Dyakonov-Shur model). The observed helicity dependent photoresponse is by several orders of magnitude higher than any earlier reported one. Also linear polarization sensitive photoresponse was registered by the same transistors. The results provide the basis for a new sensitive, all-electric, room-temperature and fast (better than 1 ns) characterisation of all polarization parameters (Stokes parameters) of terahertz radiation. It paves the way towards terahertz ellipsometry and polarization sensitive imaging based on plasma effects in field-effect-transistors.
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Submitted 25 April, 2012;
originally announced April 2012.
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Interplay of spin and orbital magnetogyrotropic photogalvanic effects in InSb/AlInSb quantum well structures
Authors:
S. Stachel,
P. Olbrich,
C. Zoth,
U. Hagner,
T. Stangl,
C. Karl,
P. Lutz,
V. V. Bel'kov,
S. K. Clowes,
T. Ashley,
A. M. Gilbertson,
S. D. Ganichev
Abstract:
We report on the observation of linear and circular magnetogyrotropic photogalvanic effects in InSb/AlInSb quantum well structures. We show that intraband (Drude-like) absorption of terahertz radiation in the heterostructures causes a dc electric current in the presence of an in-plane magnetic field. The photocurrent behavior upon variation of the magnetic field strength, temperature and wavelengt…
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We report on the observation of linear and circular magnetogyrotropic photogalvanic effects in InSb/AlInSb quantum well structures. We show that intraband (Drude-like) absorption of terahertz radiation in the heterostructures causes a dc electric current in the presence of an in-plane magnetic field. The photocurrent behavior upon variation of the magnetic field strength, temperature and wavelength is studied. We show that at moderate magnetic fields the photocurrent exhibits a typical linear field dependence. At high magnetic fields, however, it becomes nonlinear and inverses its sign. The experimental results are analyzed in terms of the microscopic models based on asymmetric relaxation of carriers in the momentum space. We demonstrate that the observed nonlinearity of the photocurrent is caused by the large Zeeman spin splitting in InSb/AlInSb structures and an interplay of the spin-related and spin-independent roots of the magnetogyrotropic photogalvanic effect.
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Submitted 7 December, 2011;
originally announced December 2011.
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Terahertz radiation driven chiral edge currents in graphene
Authors:
J. Karch,
C. Drexler,
P. Olbrich,
M. Fehrenbacher,
M. Hirmer,
M. M. Glazov,
S. A. Tarasenko,
E. L. Ivchenko,
B. Birkner,
J. Eroms,
D. Weiss,
R. Yakimova,
S. Lara-Avila,
S. Kubatkin,
M. Ostler,
T. Seyller,
S. D. Ganichev
Abstract:
We observe photocurrents induced in single layer graphene samples by illumination of the graphene edges with circularly polarized terahertz radiation at normal incidence. The photocurrent flows along the sample edges and forms a vortex. Its winding direction reverses by switching the light helicity from left- to right-handed. We demonstrate that the photocurrent stems from the sample edges, which…
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We observe photocurrents induced in single layer graphene samples by illumination of the graphene edges with circularly polarized terahertz radiation at normal incidence. The photocurrent flows along the sample edges and forms a vortex. Its winding direction reverses by switching the light helicity from left- to right-handed. We demonstrate that the photocurrent stems from the sample edges, which reduce the spatial symmetry and result in an asymmetric scattering of carriers driven by the radiation electric field. The developed theory is in a good agreement with the experiment. We show that the edge photocurrents can be applied for determination of the conductivity type and the momentum scattering time of the charge carriers in the graphene edge vicinity.
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Submitted 19 July, 2011;
originally announced July 2011.
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Diluted magnetic semiconductor heterostructure AlSb/InAs/ZnMnTe with giant Zeeman effect for two dimensional electrons in InAs
Authors:
Ya. V. Terent'ev,
C. Zoth,
V. V. Bel'kov,
P. Olbrich,
C. Drexler,
V. Lechner,
P. Lutz,
A. N. Semenov,
V. A. Solov'ev,
I. V. Sedova,
G. V. Klimko,
T. A. Komissarova,
S. V. Ivanov,
S. D. Ganichev
Abstract:
A new approach to the growth of diluted magnetic semiconductors with two dimensional electron gas in InAs quantum well has been developed. The method is based on molecular-beam epitaxy of coherent "hybrid" AlSb/InAs/(Zn,Mn)Te heterostructures with a III-V/II-VI interface inside. The giant Zeeman splitting of the InAs conduction band caused by exchange interaction with Mn2+ ions has been proved by…
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A new approach to the growth of diluted magnetic semiconductors with two dimensional electron gas in InAs quantum well has been developed. The method is based on molecular-beam epitaxy of coherent "hybrid" AlSb/InAs/(Zn,Mn)Te heterostructures with a III-V/II-VI interface inside. The giant Zeeman splitting of the InAs conduction band caused by exchange interaction with Mn2+ ions has been proved by measuring the microwave radiation induced spin polarized electric currents.
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Submitted 5 April, 2011;
originally announced April 2011.
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Classical ratchet effects in heterostructures with a lateral periodic potential
Authors:
P. Olbrich,
J. Karch,
E. L. Ivchenko,
J. Kamann,
B. März,
M. Fehrenbacher,
D. Weiss,
S. D. Ganichev
Abstract:
We study terahertz radiation induced ratchet currents in low dimensional semiconductor structures with a superimposed one-dimensional lateral periodic potential. The periodic potential is produced by etching a grating into the sample surface or depositing metal stripes periodically on the sample top. Microscopically, the photocurrent generation is based on the combined action of the lateral period…
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We study terahertz radiation induced ratchet currents in low dimensional semiconductor structures with a superimposed one-dimensional lateral periodic potential. The periodic potential is produced by etching a grating into the sample surface or depositing metal stripes periodically on the sample top. Microscopically, the photocurrent generation is based on the combined action of the lateral periodic potential, verified by transport measurements, and the in-plane modulated pum** caused by the lateral superlattice. We show that a substantial part of the total current is caused by the polarization-independent Seebeck ratchet effect. In addition, polarization-dependent photocurrents occur, which we interpret in terms of their underlying microscopical mechanisms. As a result, the class of ratchet systems needs to be extended by linear and circular ratchets, sensitive to linear and circular polarizations of the driving electro-magnetic force.
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Submitted 26 January, 2011;
originally announced January 2011.
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Spin and orbital mechanisms of the magneto-gyrotropic photogalvanic effects in GaAs/AlGaAs quantum well structures
Authors:
V. Lechner,
L. E. Golub,
F. Lomakina,
V. V. Bel'kov,
P. Olbrich,
S. Stachel,
I. Caspers,
M. Griesbeck,
M. Kugler,
M. J. Hirmer,
T. Korn,
C. Schüller,
D. Schuh,
W. Wegscheider,
S. D. Ganichev
Abstract:
We report on the study of the linear and circular magneto-gyrotropic photogalvanic effect (MPGE) in GaAs/AlGaAs quantum well structures. Using the fact that in such structures the Landé-factor g* depends on the quantum well (QW) width and has different signs for narrow and wide QWs, we succeeded to separate spin and orbital contributions to both MPGEs. Our experiments show that, for most quantum w…
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We report on the study of the linear and circular magneto-gyrotropic photogalvanic effect (MPGE) in GaAs/AlGaAs quantum well structures. Using the fact that in such structures the Landé-factor g* depends on the quantum well (QW) width and has different signs for narrow and wide QWs, we succeeded to separate spin and orbital contributions to both MPGEs. Our experiments show that, for most quantum well widths, the PGEs are mainly driven by spin-related mechanisms, which results in a photocurrent proportional to the g* factor. In structures with a vanishingly small g* factor, however, linear and circular MPGE are also detected, proving the existence of orbital mechanisms.
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Submitted 19 November, 2010;
originally announced November 2010.
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Valley-Orbit Photocurrents in (111)-oriented Si-MOSFETs
Authors:
J. Karch,
S. A. Tarasenko,
E. L. Ivchenko,
J. Kamann,
P. Olbrich,
M. Utz,
Z. D. Kvon,
S. D. Ganichev
Abstract:
We demonstrate the injection of pure valley-orbit currents in multi-valley semiconductors and present the theory of this effect. We studied photo-induced transport in $n$-doped (111)-oriented silicon metal-oxide-semiconductor field effect transistors at room temperature. By shining circularly polarized light on exact oriented structures with six equivalent valleys, non-zero electron fluxes within…
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We demonstrate the injection of pure valley-orbit currents in multi-valley semiconductors and present the theory of this effect. We studied photo-induced transport in $n$-doped (111)-oriented silicon metal-oxide-semiconductor field effect transistors at room temperature. By shining circularly polarized light on exact oriented structures with six equivalent valleys, non-zero electron fluxes within each valley are generated, which compensate each other and do not yield a net electric current. By disturbing the balance between the valley fluxes, in this work by applying linearly polarized radiation as well as by introducing a nonequivalence of the valleys by disorientation, we approve that the pure valley currents can be converted into a measurable electric current.
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Submitted 21 October, 2010;
originally announced October 2010.
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Spin polarized electric currents in semiconductor heterostructures induced by microwave radiation
Authors:
C. Drexler,
V. V. Bel'kov,
B. Ashkinadze,
P. Olbrich,
C. Zoth,
V. Lechner,
Ya. V. Terent'ev,
D. R. Yakovlev,
G. Karczewski,
T. Wojtowicz,
D. Schuh,
W. Wegscheider,
S. D. Ganichev
Abstract:
We report on microwave (mw) radiation induced electric currents in (Cd,Mn)Te/(Cd,Mg)Te and InAs/(In,Ga)As quantum wells subjected to an external in-plane magnetic field. The current generation is attributed to the spin-dependent energy relaxation of electrons heated by mw radiation. The relaxation produces equal and oppositely directed electron flows in the spin-up and spin-down subbands yielding…
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We report on microwave (mw) radiation induced electric currents in (Cd,Mn)Te/(Cd,Mg)Te and InAs/(In,Ga)As quantum wells subjected to an external in-plane magnetic field. The current generation is attributed to the spin-dependent energy relaxation of electrons heated by mw radiation. The relaxation produces equal and oppositely directed electron flows in the spin-up and spin-down subbands yielding a pure spin current. The Zeeman splitting of the subbands in the magnetic field leads to the conversion of the spin flow into a spin-polarized electric current.
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Submitted 16 September, 2010;
originally announced September 2010.
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Circular ac Hall Effect
Authors:
J. Karch,
P. Olbrich,
M. Schmalzbauer,
C. Zoth,
C. Brinsteiner,
M. Fehrenbacher,
U. Wurstbauer,
M. M. Glazov,
S. A. Tarasenko,
E. L. Ivchenko,
D. Weiss,
J. Eroms,
R. Yakimova,
S. Lara-Avila,
S. Kubatkin,
S. D. Ganichev
Abstract:
We report the observation of the circular ac Hall effect where the current is solely driven by the crossed ac electric and magnetic fields of circularly polarized radiation. Illuminating an unbiased monolayer sheet of graphene with circularly polarized terahertz radiation at room temperature generates - under oblique incidence - an electric current perpendicular to the plane of incidence, whose si…
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We report the observation of the circular ac Hall effect where the current is solely driven by the crossed ac electric and magnetic fields of circularly polarized radiation. Illuminating an unbiased monolayer sheet of graphene with circularly polarized terahertz radiation at room temperature generates - under oblique incidence - an electric current perpendicular to the plane of incidence, whose sign is reversed by switching the radiation helicity. Alike the classical dc Hall effect, the voltage is caused by crossed electric and magnetic fields which are however rotating with the light's frequency.
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Submitted 12 August, 2010;
originally announced August 2010.
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Photon helicity driven electric currents in graphene
Authors:
J. Karch,
P. Olbrich,
M. Schmalzbauer,
C. Brinsteiner,
U. Wurstbauer,
M. M. Glazov,
S. A. Tarasenko,
E. L. Ivchenko,
D. Weiss,
J. Eroms,
S. D. Ganichev
Abstract:
We report on the observation of photon helicity driven currents in graphene. The directed net electric current is generated in single layer graphene by circularly polarized terahertz laser radiation at normal as well as at oblique incidence and changes its sign upon reversing the radiation helicity. The phenomenological and microscopic theories of the observed photocurrents are developed. We dem…
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We report on the observation of photon helicity driven currents in graphene. The directed net electric current is generated in single layer graphene by circularly polarized terahertz laser radiation at normal as well as at oblique incidence and changes its sign upon reversing the radiation helicity. The phenomenological and microscopic theories of the observed photocurrents are developed. We demonstrate that under oblique incidence the current is caused by the circular photon drag effect in the interior of graphene sheet. By contrast, the effect at normal incidence stems from the sample edges, which reduce the symmetry and result in an asymmetric scattering of carriers driven by the radiation field. Besides a photon helicity dependent current we also observe photocurrents in response to linearly polarized radiation. The microscopic mechanisms governing this effect are discussed.
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Submitted 4 February, 2010;
originally announced February 2010.
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Orbital photogalvanic effects in quantum-confined structures
Authors:
J. Karch,
S. A. Tarasenko,
P. Olbrich,
T. Schönberger,
C. Reitmaier,
D. Plohmann,
Z. D. Kvon,
S. D. Ganichev
Abstract:
We report on the circular and linear photogalvanic effects caused by free-carrier absorption of terahertz radiation in electron channels on (001)-oriented and miscut silicon surfaces. The photocurrent behavior upon variation of the radiation polarization state, wavelength, gate voltage and temperature is studied. We present the microscopical and phenomenological theory of the photogalvanic effec…
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We report on the circular and linear photogalvanic effects caused by free-carrier absorption of terahertz radiation in electron channels on (001)-oriented and miscut silicon surfaces. The photocurrent behavior upon variation of the radiation polarization state, wavelength, gate voltage and temperature is studied. We present the microscopical and phenomenological theory of the photogalvanic effects, which describes well the experimental results. In particular, it is demonstrated that the circular (photon-helicity sensitive) photocurrent in silicon-based structures is of pure orbital nature originating from the quantum interference of different pathways contributing to the absorption of monochromatic radiation.
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Submitted 7 December, 2009;
originally announced December 2009.
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Magneto-gyrotropic photogalvanic effect and spin dephasing in (110)-grown GaAs/AlGaAs quantum well structures
Authors:
P. Olbrich,
J. Allerdings,
V. V. Bel'kov,
S. A. Tarasenko,
D. Schuh,
W. Wegscheider,
T. Korn,
C. Schüller,
D. Weiss,
S. D. Ganichev
Abstract:
We report on the magneto-gyrotropic photogalvanic effect (MPGE) in n-doped (110)-grown GaAs/AlGaAs quantum-well (QW) structures caused by free-carrier absorption of terahertz radiation in the presence of a magnetic field. The photocurrent behavior upon variation of the radiation polarization state, magnetic field orientation and temperature is studied. The developed theory of MPGE describes well…
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We report on the magneto-gyrotropic photogalvanic effect (MPGE) in n-doped (110)-grown GaAs/AlGaAs quantum-well (QW) structures caused by free-carrier absorption of terahertz radiation in the presence of a magnetic field. The photocurrent behavior upon variation of the radiation polarization state, magnetic field orientation and temperature is studied. The developed theory of MPGE describes well all experimental results. It is demonstrated that the structure inversion asymmetry can be controllably tuned to zero by variation of the delta-do** layer positions. For the in-plane magnetic field the photocurrent is only observed in asymmetric structures but vanishes in symmetrically doped QWs. Applying time-resolved Kerr rotation and polarized luminescence we investigate the spin relaxation in QWs for various excitation levels. Our data confirm that in symmetrically doped QWs the spin relaxation time is maximal, therefore, these structures set the upper limit of spin dephasing in GaAs/AlGaAs QWs.
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Submitted 21 March, 2009;
originally announced March 2009.
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Tuning of structure inversion asymmetry by the $δ$-do** position in (001)-grown GaAs quantum wells
Authors:
V. Lechner,
L. E. Golub,
P. Olbrich,
S. Stachel,
D. Schuh,
W. Wegscheider,
V. V. Bel'kov,
S. D. Ganichev
Abstract:
Structure and bulk inversion asymmetry in doped (001)-grown GaAs quantum wells is investigated by applying the magnetic field induced photogalvanic effect. We demonstrate that the structure inversion asymmetry (SIA) can be tailored by variation of the delta-do** layer position. Symmetrically-doped structures exhibit a substantial SIA due to impurity segregation during the growth process. Tunin…
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Structure and bulk inversion asymmetry in doped (001)-grown GaAs quantum wells is investigated by applying the magnetic field induced photogalvanic effect. We demonstrate that the structure inversion asymmetry (SIA) can be tailored by variation of the delta-do** layer position. Symmetrically-doped structures exhibit a substantial SIA due to impurity segregation during the growth process. Tuning the SIA by the delta-do** position we grow samples with almost equal degrees of structure and bulk inversion asymmetry.
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Submitted 6 March, 2009;
originally announced March 2009.
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Spin currents in diluted magnetic semiconductors (extended version)
Authors:
S. D. Ganichev,
S. A. Tarasenko,
V. V. Bel'kov,
P. Olbrich,
W. Eder,
D. R. Yakovlev,
V. Kolkovsky,
W. Zaleszczyk,
G. Karczewski,
T. Wojtowicz,
D. Weiss
Abstract:
Spin currents resulting in the zero-bias spin separation have been observed in unbiased diluted magnetic semiconductor structures (Cd,Mn)Te/(Cd,Mg)Te. The pure spin current generated due to the electron gas heating by terahertz radiation is converted into a net electric current by application of an external magnetic field. We demonstrate that polarization of the magnetic ion system enhances dras…
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Spin currents resulting in the zero-bias spin separation have been observed in unbiased diluted magnetic semiconductor structures (Cd,Mn)Te/(Cd,Mg)Te. The pure spin current generated due to the electron gas heating by terahertz radiation is converted into a net electric current by application of an external magnetic field. We demonstrate that polarization of the magnetic ion system enhances drastically the conversion due to the spin-dependent scattering by localized Mn(2+) ions and the giant Zeeman splitting.
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Submitted 2 March, 2009; v1 submitted 26 November, 2008;
originally announced November 2008.
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Fast detector of the ellipticity of infrared and terahertz radiation based on HgTe quantum well structures
Authors:
S. N. Danilov,
B. Wittmann,
P. Olbrich,
W. Eder,
W. Prettl,
L. E. Golub,
E. V. Beregulin,
Z. D. Kvon,
N. N. Mikhailov,
S. A. Dvoretsky,
V. A. Shalygin,
N. Q. Vinh,
A. F. G. van der Meer,
B. Murdin,
S. D. Ganichev
Abstract:
We report a fast, room temperature detection scheme for the polarization ellipticity of laser radiation, with a bandwidth that stretches from the infrared to the terahertz range. The device consists of two elements, one in front of the other, that detect the polarization ellipticity and the azimuthal angle of the ellipse. The elements respectively utilise the circular photogalvanic effect in a n…
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We report a fast, room temperature detection scheme for the polarization ellipticity of laser radiation, with a bandwidth that stretches from the infrared to the terahertz range. The device consists of two elements, one in front of the other, that detect the polarization ellipticity and the azimuthal angle of the ellipse. The elements respectively utilise the circular photogalvanic effect in a narrow gap semiconductor and the linear photogalvanic effect in a bulk piezoelectric semiconductor. For the former we characterized both a HgTe quantum well and bulk Te, and for the latter, bulk GaAs. In contrast with optical methods our device is an easy to handle all-electric approach, which we demonstrated by applying a large number of different lasers from low power, continuous wave systems to high power, pulsed sources.
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Submitted 7 October, 2008;
originally announced October 2008.
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Photogalvanic effects due to quantum interference in optical transitions demonstrated by terahertz radiation absorption in Si-MOSFETs
Authors:
P. Olbrich,
S. A. Tarasenko,
C. Reitmaier,
J. Karch,
D. Plohmann,
Z. D. Kvon,
S. D. Ganichev
Abstract:
We report on the observation of the circular (helicity-dependent) and linear photogalvanic effects in Si-MOSFETs with inversion channels. The developed microscopic theory demonstrates that the circular photogalvanic effect in Si structures it is of pure orbital nature originating from the quantum interference of different pathways contributing to the light absorption.
We report on the observation of the circular (helicity-dependent) and linear photogalvanic effects in Si-MOSFETs with inversion channels. The developed microscopic theory demonstrates that the circular photogalvanic effect in Si structures it is of pure orbital nature originating from the quantum interference of different pathways contributing to the light absorption.
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Submitted 14 August, 2008;
originally announced August 2008.
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Ratchet effects induced by terahertz radiation in heterostructures with a lateral periodic potential
Authors:
P. Olbrich,
E. L. Ivchenko,
T. Feil,
R. Ravash,
S. D. Danilov,
J. Allerdings,
D. Weiss,
S. D. Ganichev
Abstract:
We report on the observation of terahertz radiation induced photogalvanic currents in semiconductor heterostructures with one-dimensional lateral periodic potential. The potential is produced by etching a grating into the sample surface. The electric current response is well described by phenomenological theory including both the circular and linear photogalvanic effects. Experimental data demon…
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We report on the observation of terahertz radiation induced photogalvanic currents in semiconductor heterostructures with one-dimensional lateral periodic potential. The potential is produced by etching a grating into the sample surface. The electric current response is well described by phenomenological theory including both the circular and linear photogalvanic effects. Experimental data demonstrate that the inversion asymmetry of the periodic lateral pattern can be varied by means of electron beam lithography to produce classical lateral ratchets. A novel microscopical mechanism for the polarization-dependent photogalvanic effects has been proposed to interpret the experimental findings. The photocurrent generation is based on the combined action of the lateral periodic potential and the modulated in-plane pum**. The latter modulation stems from near-field effects of the radiation propagating through the grating.
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Submitted 14 August, 2008;
originally announced August 2008.
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Symmetry and spin dephasing in (110)-grown quantum wells
Authors:
V. V. Bel'kov,
P. Olbrich,
S. A. Tarasenko,
D. Schuh,
W. Wegscheider,
T. Korn,
Ch. Schüller,
D. Weiss,
W. Prettl,
S. D. Ganichev
Abstract:
Symmetry and spin dephasing of in (110)-grown GaAs quantum wells (QWs) are investigated applying magnetic field induced photogalvanic effect (MPGE) and time-resolved Kerr rotation. We show that MPGE provides a tool to probe the symmetry of (110)-grown quantum wells. The photocurrent is only observed for asymmetric structures but vanishes for symmetric QWs. Applying Kerr rotation we prove that in…
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Symmetry and spin dephasing of in (110)-grown GaAs quantum wells (QWs) are investigated applying magnetic field induced photogalvanic effect (MPGE) and time-resolved Kerr rotation. We show that MPGE provides a tool to probe the symmetry of (110)-grown quantum wells. The photocurrent is only observed for asymmetric structures but vanishes for symmetric QWs. Applying Kerr rotation we prove that in the latter case the spin relaxation time is maximal, therefore these structures set upper limit of spin dephasing in GaAs QWs. We also demonstrate that structure inversion asymmetry can be controllably tuned to zero by variation of delta-do** layer position.
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Submitted 11 December, 2007;
originally announced December 2007.
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Subnanosecond Ellipticity Detector for Laser Radiation (second version, extended)
Authors:
S. D. Ganichev,
W. Weber,
J. Kiermaier,
S. N. Danilov,
P. Olbrich,
D. Schuh,
W. Wegscheider,
D. Bougeard,
G. Abstreiter,
W. Prettl
Abstract:
Two types of room temperature detectors of terahertz laser radiation have been developed which allow in an all-electric manner to determine the plane of polarization of linearly polarized radiation and the Stokes parameters of elliptically polarized radiation, respectively. The operation of the detectors is based on photogalvanic effects in semiconductor quantum well structures of low symmetry.…
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Two types of room temperature detectors of terahertz laser radiation have been developed which allow in an all-electric manner to determine the plane of polarization of linearly polarized radiation and the Stokes parameters of elliptically polarized radiation, respectively. The operation of the detectors is based on photogalvanic effects in semiconductor quantum well structures of low symmetry. The photogalvanic effects have nanoseconds time constants at room temperature making a high time resolution of the polarization detectors possible.
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Submitted 18 March, 2008; v1 submitted 31 July, 2007;
originally announced July 2007.
