Autonomous neural information processing by a dynamical memristor circuit
Authors:
Dániel Molnár,
Tímea Nóra Török,
Roland Kövecs,
László Pósa,
Péter Balázs,
György Molnár,
Nadia Jimenez Olalla,
Juerg Leuthold,
János Volk,
Miklós Csontos,
András Halbritter
Abstract:
Analog tunable memristors are widely utilized as artificial synapses in various neural network applications. However, exploiting the dynamical aspects of their conductance change to implement active neurons is still in its infancy, awaiting the realization of efficient neural signal recognition functionalities. Here we experimentally demonstrate an artificial neural information processing unit tha…
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Analog tunable memristors are widely utilized as artificial synapses in various neural network applications. However, exploiting the dynamical aspects of their conductance change to implement active neurons is still in its infancy, awaiting the realization of efficient neural signal recognition functionalities. Here we experimentally demonstrate an artificial neural information processing unit that can detect a temporal pattern in a very noisy environment, fire a single output spike upon successful detection and reset itself in a fully unsupervised, autonomous manner. This circuit relies on the dynamical operation of only two memristive blocks: a non-volatile Ta$_2$O$_5$ device and a volatile VO$_2$ unit. A fading functionality with exponentially tunable memory time constant enables adaptive operation dynamics, which can be tailored for the targeted temporal pattern recognition task. In the trained circuit false input patterns only induce short-term variations. In contrast, the desired signal activates long-term memory operation of the non-volatile component, which triggers a firing output of the volatile block.
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Submitted 25 July, 2023;
originally announced July 2023.
Picosecond Time-Scale Resistive Switching Monitored in Real-Time
Authors:
Miklós Csontos,
Yannik Horst,
Nadia Jimenez Olalla,
Ueli Koch,
Ivan Shorubalko,
András Halbritter,
Juerg Leuthold
Abstract:
The resistance state of filamentary memristors can be tuned by relocating only a few atoms at interatomic distances in the active region of a conducting filament. Thereby the technology holds promise not only in its ultimate downscaling potential and energy efficiency but also in unprecedented speed. Yet, the breakthrough in high-frequency applications still requires the clarification of the domin…
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The resistance state of filamentary memristors can be tuned by relocating only a few atoms at interatomic distances in the active region of a conducting filament. Thereby the technology holds promise not only in its ultimate downscaling potential and energy efficiency but also in unprecedented speed. Yet, the breakthrough in high-frequency applications still requires the clarification of the dominant mechanisms and inherent limitations of ultra-fast resistive switching. Here we investigate bipolar, multilevel resistive switchings in tantalum pentoxide based memristors with picosecond time resolution. We experimentally demonstrate cyclic resistive switching operation due to 20 ps long voltage pulses of alternating polarity. Through the analysis of the real-time response of the memristor we find that the set switching can take place at the picosecond time-scale where it is only compromised by the bandwidth limitations of the experimental setup. In contrast, the completion of the reset transitions significantly exceeds the duration of the ultra-short voltage bias, demonstrating the dominant role of thermal diffusion and underlining the importance of dedicated thermal engineering for future high-frequency memristor circuit applications.
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Submitted 14 September, 2022;
originally announced September 2022.
