Showing 1–2 of 2 results for author: Okihara, M
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Lapis SOI Pixel Process
Authors:
Masao Okihara,
Hiroki Kasai,
Noriyuki Miura,
Naoya Kuriyama,
Yoshiki Nagatomo
Abstract:
0.2 um fully-depleted SOI technology has been developed a for X-ray pixel detectors. To improve the detector performance, some advanced process technologies are develo** continuously. To utilize the high resistivity FZ-SOI, slow ramp up and ramp down recipes are applied for the thermal processes in both of SOI wafer fabrication and pixel detector process. The suitable backside treatment is also…
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0.2 um fully-depleted SOI technology has been developed a for X-ray pixel detectors. To improve the detector performance, some advanced process technologies are develo** continuously. To utilize the high resistivity FZ-SOI, slow ramp up and ramp down recipes are applied for the thermal processes in both of SOI wafer fabrication and pixel detector process. The suitable backside treatment is also applied to prevent increase of leakage current at backside damaged layer in the case of full depletion of substrate. Large detector chip about 66mm width and 30mm height can be obtained by stitching exposure technique for large detector chip. To improve cross-talk and radiation tolerance, the nested well structure and double- SOI wafer are now under investigation for advanced pixel structure.
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Submitted 16 November, 2015;
originally announced November 2015.
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X-ray Radiation Hardness of Fully-Depleted SOI MOSFETs and Its Improvement
Authors:
Ikuo Kurachi,
Kazuo Kobayashi,
Hiroki Kasai,
Marie Mochizuki,
Masao Okihara,
Takaki Hatsui,
Kazuhiko Hara,
Yasuo Arai
Abstract:
X-ray radiation hardness of FD-SOI n- and p-MOSFET has been investigated. After 1.4 kGy(Si) irradiation, 15% drain current increase for n-MOSFET and 20% drain current decrease for p-MOSFET are observed. From analysis of gmmax-Vsub, the major cause of n-MOSFET drain current change is the generated positive charge in BOX. On the other hand, the major cause of p-MOSFET drain current change is the rad…
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X-ray radiation hardness of FD-SOI n- and p-MOSFET has been investigated. After 1.4 kGy(Si) irradiation, 15% drain current increase for n-MOSFET and 20% drain current decrease for p-MOSFET are observed. From analysis of gmmax-Vsub, the major cause of n-MOSFET drain current change is the generated positive charge in BOX. On the other hand, the major cause of p-MOSFET drain current change is the radiation induced gate channel modulation by the generated positive charge in sidewall spacer. It is confirmed that the p-MOSFET drain current change is improved by higher PLDD dose. Thinner BOX is also proposed for further radiation hardness improvement.
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Submitted 29 June, 2015;
originally announced June 2015.
