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Substrate Mediated Synthesis of Ti-Si-N Nano-and-Micro Structures for Optoelectronic Applications
Authors:
Sachin Yadav,
Alka Sharma,
Bikash Gajar,
Mandeep Kaur,
Dinesh Singh,
Sandeep Singh,
Kamlesh Kumar Maurya,
Sudhir Husale,
Vijay Narain Ojha,
Sangeeta Sahoo
Abstract:
Being one of the strongest materials, ternary TiSiN exhibits a very interesting family of binary transition metal nitride and silicide systems. A novel technique to fabricate morphologically fascinating nano and micro structures of TiSiN is reported here. The referred TiSiN films, majorly constituted with cubic TiN phase, are enriched with crystalline nanoparticles, micro-flowers and faceted micro…
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Being one of the strongest materials, ternary TiSiN exhibits a very interesting family of binary transition metal nitride and silicide systems. A novel technique to fabricate morphologically fascinating nano and micro structures of TiSiN is reported here. The referred TiSiN films, majorly constituted with cubic TiN phase, are enriched with crystalline nanoparticles, micro-flowers and faceted micro-crystals which possess attractive functionalities towards plasmon mediated optoelectronic applications. Reactivity of titanium to silicon nitride based dielectric top** on the substrate at high temperature plays the key role in nitride formation for the demonstrated protocol. The optoelectronic response for these morphologically enriched composite films indicates an influential role of photo-induced surface plasmon polaritons on their dc transport properties. A plasmonically tuned resistive switching, controlled by the surface morphology in association with the film thickness, is observed under light illumination. Using Drudes modified frequency dependent bulk electron scattering rates and surface mediated SPPs-electron scattering rates, a generic model is proposed for addressing unambiguously the increased device resistance in response to light. The featured synthesis process opens a new direction towards the growth of transition metal nitrides while the proposed model serves as a basic platform to understand photo-induced electron scattering mechanisms in metal.
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Submitted 29 March, 2019;
originally announced March 2019.
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Novel synthesis of topological insulator based nanostructures (Bi2Te3) demonstrating high performance photodetection
Authors:
Alka Sharma,
T D Senguttuvan,
V N Ojha,
Sudhir Husale
Abstract:
The rapid progress in 2D material research has triggered the growth of various quantum nanostructures-nanosheets, nanowires, nanoribbons, nanocrystals and the exotic nature originating through 2D heterostructures has extended the synthesis of hybrid materials beyond the conventional approaches. Here we introduce simple, one step confined thin melting approach to form nanostructures of TI (topologi…
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The rapid progress in 2D material research has triggered the growth of various quantum nanostructures-nanosheets, nanowires, nanoribbons, nanocrystals and the exotic nature originating through 2D heterostructures has extended the synthesis of hybrid materials beyond the conventional approaches. Here we introduce simple, one step confined thin melting approach to form nanostructures of TI (topological insulator) materials, their hybrid heterostructures with other novel 2D materials and their scalable growth. The substrate and temperature dependent growth is investigated on insulating, superconducting, metallic, semiconducting and ferromagnetic materials. The temperature dependent synthesis enables the growth of single, few quintuples to nanosheets and nanocrystals. The density of nanostructure growth is seen more on fabricated patterns or textured substrates. The fabricated nanostructure based devices show the broadband photodetection from ultraviolet to near infrared and exhibit high photoresponsivity. Ultimately, this unique synthesis process will give easy access to fabricate devices on user friendly substrates, study nanostructures and scalable growth will enable their future technology applications.
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Submitted 6 March, 2019;
originally announced March 2019.
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Proximity-induced supercurrent through topological insulator based nanowires for quantum computation studies
Authors:
Biplab Bhattacharyya,
V. P. S. Awana,
T. D. Senguttuvan,
V. N. Ojha,
Sudhir Husale
Abstract:
Proximity induced superconducting energy gap in the surface states of topological insulators has been predicted to host the much wanted Majorana fermions for fault tolerant quantum computation. Recent theoretically proposed architectures for topological quantum computation via Majoranas are based on large networks of Kitaevs one dimensional quantum wires, which pose a huge experimental challenge i…
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Proximity induced superconducting energy gap in the surface states of topological insulators has been predicted to host the much wanted Majorana fermions for fault tolerant quantum computation. Recent theoretically proposed architectures for topological quantum computation via Majoranas are based on large networks of Kitaevs one dimensional quantum wires, which pose a huge experimental challenge in terms of scalability of the current single nanowire based devices. Here, we address this problem by realizing robust superconductivity in junctions of fabricated topological insulator Bi2Se3 nanowires proximity coupled to conventional s wave superconducting W electrodes. Milling technique possesses great potential in fabrication of any desired shapes and structures at nanoscale level, and therefore can be effectively utilized to scale up the existing single nanowire based design into nanowire based network architectures. We demonstrate the dominant role of ballistic topological surface states in propagating the long range proximity induced superconducting order with high IcRN product in long Bi2Se3 junctions. Large upper critical magnetic fields exceeding the Chandrasekhar Clogston limit suggests the existence of robust superconducting order with spin triplet cooper pairing. An unconventional inverse dependence of IcRN product on the width of the nanowire junction was also observed.
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Submitted 22 November, 2018;
originally announced November 2018.
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Light Induced Electron-Phonon Scattering Mediated Resistive Switching in Nanostructured Nb Thin Film Superconductor
Authors:
Shafaq Kazim,
Alka Sharma,
Sachin Yadav,
Bikash Gajar,
Lalit M. Joshi,
Monu Mishra,
Govind Gupta,
Sudhir Husale,
Anurag Gupta,
Sangeeta Sahoo,
V. N. Ojha
Abstract:
The elemental Nb is mainly investigated for its eminent superconducting properties. In contrary, we report of a relatively unexplored property, namely, its superior optoelectronic property in reduced dimension. We demonstrate here that nanostructured Nb thin films (NNFs), under optical illumination, behave as room temperature photo-switches and exhibit bolometric features below its superconducting…
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The elemental Nb is mainly investigated for its eminent superconducting properties. In contrary, we report of a relatively unexplored property, namely, its superior optoelectronic property in reduced dimension. We demonstrate here that nanostructured Nb thin films (NNFs), under optical illumination, behave as room temperature photo-switches and exhibit bolometric features below its superconducting critical temperature. Both photo-switch and superconducting bolometric behavior are monitored by its resistance change with light in visible and near infrared (NIR) wavelength range. Unlike the conventional photodetectors, the NNF devices switch to higher resistive states with light and the corresponding resistivity change is studied with thickness and grain size variations. At low temperature in its superconducting state, the light exposure shifts the superconducting transition towards lower temperature. The room temperature photon sensing nature of the NNF is explained by the photon assisted electron-phonon scattering mechanism while the low temperature light response is mainly related to the heat generation which essentially changes the effective temperature for the device and the device is capable of sensing a temperature difference of few tens of milli-kelvins. The observed photo-response on the transport properties of NNFs can be very important for future superconducting photon detectors, bolometers and phase slip based device applications.
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Submitted 13 April, 2017;
originally announced April 2017.
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On the factors affecting the high temperature insulator-metal transition in rare-earth manganites
Authors:
Dipten Bhattacharya,
Pintu Das,
A. Pandey,
A. K. Raychaudhuri,
Amitava Chakraborty,
V. N. Ojha
Abstract:
The measurement of resistivity across a wide temperature range - from 15 to 1473 K - in rare-earth manganite series of compounds reveals a very interesting feature : normally observed insulating pattern beyond Tc (Curie Point) gives way to a reentrant metallic pattern around a characteristic temperature T*. The transport activation barrier Ea collapses to zero around T*. T* is found to be depend…
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The measurement of resistivity across a wide temperature range - from 15 to 1473 K - in rare-earth manganite series of compounds reveals a very interesting feature : normally observed insulating pattern beyond Tc (Curie Point) gives way to a reentrant metallic pattern around a characteristic temperature T*. The transport activation barrier Ea collapses to zero around T*. T* is found to be dependent on the carrier concentration or the concentration of the Jahn-Teller-active Mn(3+) ions as well as on the average A-site radius <rA> for a fixed carrier concentration. These factors govern the effective lattice distortion and hence lead to the variation in the conduction bandwidth. Our data cover a wide range - from T*>>Tc for smaller bandwidth to T* tending towards Tc for larger bandwidth. These results seem to provide evidence of the onset of lattice distortion at high temperature (around T*) and its variation. Since lattice distortion governs the magnetic, transport and other important behaviors significantly, our data assume importance as they offer a new measure of the effective distortion and its tunability.
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Submitted 21 November, 2000;
originally announced November 2000.
